Exposure apparatus, exposure method and device manufacturing method
80 claims: 8 independent, 72 dependent
- 1投影光学系と液体とを介して基板を露光する露光装置であって、 前記投影光学系が配置される第1領域と、所定方向に関して前記第1領域の一側に位置する第2領域とを含む領域内で、前記基板を載置して移動可能な第1ステージと、 前記第1領域と、前記所定方向に関して前記第1領域の他側に位置する第3領域とを含む領域内で移動可能な第2ステージと、 前記投影光学系の直下に液体を供給して液浸領域を形成する液浸システムと、 前記投影光学系と前記第1ステージとの間に前記液浸領域が維持される第1状態と、前記投影光学系と前記第2ステージとの間に前記液浸領域が維持される第2状態との一方が他方に遷移するように、前記投影光学系の直下に前記液浸領域を維持しつつ、前記所定方向に関して前記第1、第2ステージを移動する駆動システムと、を備える。
- 2請求項1に記載の露光装置において、 前記第1、第2ステージは、前記遷移においてその対向する側面が、前記第1状態から前記第2状態への遷移と前記第2状態から前記第1状態への遷移とで同一となるように移動される。
- 3請求項1又は2に記載の露光装置において、 前記第2ステージは、前記第2状態で実行される所定の計測に用いられる。
- 4請求項3に記載の露光装置において、 前記計測は、前記投影光学系及び前記液体を介して行われる。
- 5請求項3又は4に記載の露光装置において、 前記計測は、前記第1ステージに載置される基板のマーク検出及び/又は交換と並行して行われる。
- 6請求項1~5のいずれか一項に記載の露光装置において、 前記第2ステージは、前記基板の載置領域が設けられていない。
- 7請求項1又は2に記載の露光装置において、 前記第2ステージは、前記基板を載置し、 前記第2領域に配置され、前記第1ステージに載置される基板のマークを検出する第1マーク検出系と、 前記第3領域に配置され、前記第2ステージに載置される基板のマークを検出する第2マーク検出系と、をさらに備え、 前記第1、第2ステージの一方に載置される基板の露光と、前記第1、第2ステージの他方に載置される基板のマーク検出とは並行して行われる。
- 8投影光学系と液体とを介して基板を露光する露光装置であって、 前記基板を載置して移動可能な第1ステージと、 前記第1ステージとは独立して移動可能な第2ステージと、 前記投影光学系の直下に液体を供給して液浸領域を形成する液浸システムと、 前記投影光学系と前記第1ステージとの間に前記液浸領域が維持される第1状態と、前記投影光学系と前記第2ステージとの間に前記液浸領域が維持される第2状態との一方が他方に遷移するように、前記投影光学系の直下に前記液浸領域を維持しつつ、前記投影光学系の下方で前記第1、第2ステージを移動する駆動システムと、を備え、 前記第1、第2ステージは、前記遷移においてその対向する側面が、前記第1状態から前記第2状態への遷移と、前記第2状態から前記第1状態への遷移とで同一となるように移動される。
- 9請求項8に記載の露光装置において、 前記第1、第2ステージは、前記第1状態から前記第2状態への遷移において前記第1ステージの第1側面と前記第2ステージの第2側面とが対向するように配置され、かつ前記第2状態から前記第1状態への遷移においても前記第1側面と前記第2側面とが対向するように配置される。
- 10投影光学系と液体とを介して基板を露光する露光装置であって、 前記基板を載置して移動可能な第1ステージと、 前記第1ステージとは独立して移動可能な第2ステージと、 前記投影光学系の直下に液体を供給して液浸領域を形成する液浸システムと、 前記投影光学系と前記第1ステージとの間に前記液浸領域が維持される第1状態と、前記投影光学系と前記第2ステージとの間に前記液浸領域が維持される第2状態との一方が他方に遷移するように、前記投影光学系の直下に前記液浸領域を維持しつつ、前記投影光学系の下方で前記第1、第2ステージを移動する駆動システムと、を備え、 前記第1、第2ステージは、前記第1状態から前記第2状態への遷移において前記第1ステージの第1側面と前記第2ステージの第2側面とが対向するように配置され、かつ前記第2状態から前記第1状態への遷移においても前記第1側面と前記第2側面とが対向するように配置される。
- 11請求項8~10のいずれか一項に記載の露光装置において、 前記第1、第2ステージはそれぞれ、前記投影光学系が配置される第1領域と、前記第1領域と異なる第2領域との一方から他方に移動され、かつ前記第1領域から前記第2領域への移動と前記第2領域から前記第1領域への移動とで逆の経路を辿るように移動される。
- 12投影光学系と液体とを介して基板を露光する露光装置であって、 前記基板を載置して移動可能な第1ステージと、 前記第1ステージとは独立して移動可能な第2ステージと、 前記投影光学系の直下に液体を供給して液浸領域を形成する液浸システムと、 前記投影光学系と前記第1ステージとの間に前記液浸領域が維持される第1状態と、前記投影光学系と前記第2ステージとの間に前記液浸領域が維持される第2状態との一方が他方に遷移するように、前記投影光学系の直下に前記液浸領域を維持しつつ、前記投影光学系の下方で前記第1、第2ステージを移動する駆動システムと、を備え、 前記第1、第2ステージはそれぞれ、前記投影光学系が配置される第1領域と、前記第1領域と異なる第2領域との一方から他方に移動され、かつ前記第1領域から前記第2領域への移動と前記第2領域から前記第1領域への移動とで逆の経路を辿るように移動される。
- 13請求項11又は12に記載の露光装置において、 前記第1、第2領域は所定方向に関して位置が異なり、 前記第1、第2ステージは、前記遷移において前記所定方向に移動される。
- 14請求項11~13のいずれか一項に記載の露光装置において、 前記第2領域に配置され、前記基板のマークを検出するマーク検出系を、さらに備える。
- 15請求項11~14のいずれか一項に記載の露光装置において、 前記第2領域において、前記第1ステージに載置される基板の交換が行われる。
- 16請求項8~15のいずれか一項に記載の露光装置において、 前記基板は走査露光が行われ、 前記第1、第2ステージは、前記遷移において、前記走査露光時に前記基板が移動される方向と直交する所定方向に移動される。
- 17請求項8~16のいずれか一項に記載の露光装置において、 前記投影光学系と所定方向に関して位置が異なるマーク検出系を、さらに備え、 前記第1、第2ステージは、前記遷移において前記所定方向に移動される。
- 18請求項8~17のいずれか一項に記載の露光装置において、 前記第2ステージは、前記基板を載置し、前記第2状態において前記載置した基板を前記液浸領域に対して相対的に移動する。
- 19請求項18に記載の露光装置において、 複数の基板の露光動作において、前記第1ステージに載置される基板の露光動作と、前記第2ステージに載置される基板の露光動作とが交互に行われ、前記遷移がその露光動作の間に行われる。
- 20請求項18又は19に記載の露光装置において、 前記基板のマークを検出するマーク検出系を、さらに備え、 前記基板はその露光動作に先立ち、前記マーク検出系によってマーク検出が行われる。
- 21請求項20に記載の露光装置において、 前記第1、第2ステージは、前記第1、第2ステージの一方に載置される基板の露光動作と並行して、前記第1、第2ステージの他方に載置される基板のマーク検出動作が実行されるように移動される。
- 22請求項20又は21に記載の露光装置において、 前記遷移において、前記第1、第2ステージの一方は露光後の基板が載置され、前記第1、第2ステージの他方はマーク検出後の基板が載置される。
- 23請求項22に記載の露光装置において、 前記第1、第2ステージはそれぞれ基準マークを有し、 前記遷移前、前記マーク検出系によって前記他方のステージの基準マークが検出される。
- 24請求項23に記載の露光装置において、 前記遷移後、前記他方のステージはその基準マークが前記投影光学系の直下を通るように移動される。
- 25請求項23又は24に記載の露光装置において、 前記投影光学系と前記液体とを介して、前記露光に用いられるマスクのマークと前記基準マークとを検出する検出システムを、さらに備え、 前記遷移後、前記検出システムによる、前記他方のステージの基準マークの検出が行われる。
- 26請求項21~25のいずれか一項に記載の露光装置において、 前記遷移後、前記一方のステージは、所定の基板交換位置に移動されて前記基板の交換が行われ、かつその交換後の基板のマーク検出が行われる。
- 27請求項20~26のいずれか一項に記載の露光装置において、 前記基板は、前記露光が前記液体を介して行われ、前記マーク検出が液体を介することなく行われる。
- 28請求項18~27のいずれか一項に記載の露光装置において、 前記第1、第2ステージはそれぞれ、前記基板の載置領域、及びその周囲領域を有し、かつその表面が前記周囲領域の表面とほぼ面一となるように前記基板を前記載置領域に載置する。
- 29請求項28に記載の露光装置において、 前記第1、第2ステージはそれぞれ、その表面が前記周囲領域の表面とほぼ面一となる基準マーク部材を有する。
- 30請求項8~29のいずれか一項に記載の露光装置において、 前記第1、第2ステージは、前記第1状態から前記第2状態への遷移において対向して配置される上端部が、前記第2状態から前記第1状態への遷移においても対向して配置される。
- 31請求項1~30のいずれか一項に記載の露光装置において、 前記第1、第2状態の間の過渡状態では、前記第1、第2ステージの両方によって前記液浸領域が前記投影光学系の直下に維持される。
- 32請求項1~31のいずれか一項に記載の露光装置において、 前記第1、第2ステージは、前記遷移において近接あるいは接触した状態で移動される。
- 33請求項1~32のいずれか一項に記載の露光装置において、 前記第1、第2ステージは、前記遷移において、前記投影光学系の直下に前記液浸領域が維持されるように近接した状態、あるいは、前記液体の漏出が防止または抑制されるように近接した状態で移動される。
- 34請求項1~33のいずれか一項に記載の露光装置において、 前記第1、第2ステージは、所定方向に関して接近するように相対移動され、かつ前記遷移において前記接近した状態で前記所定方向に移動される。
- 35請求項1~34のいずれか一項に記載の露光装置において、 前記第1、第2ステージは、前記遷移において所定方向に関してその位置関係が維持されつつ同時に移動される。
- 36請求項34又は35に記載の露光装置において、 前記第1、第2ステージは、前記所定方向に関して接近するための相対移動と、前記所定方向と直交する方向に関する位置関係の調整とが行われる。
- 37請求項1~36のいずれか一項に記載の露光装置において、 前記遷移において前記第1、第2ステージの間隙からの前記液体の漏れを抑制する抑制部材を、さらに備える。
- 38請求項37に記載の露光装置において、 前記抑制部材は、前記遷移において前記第1、第2ステージの間に配置される。
- 39請求項37又は38に記載の露光装置において、 前記抑制部材は、前記第1、第2ステージの少なくとも一方に着脱可能に設けられる。
- 40リソグラフィ工程を含むデバイス製造方法であって、 前記リソグラフィ工程では、請求項1~39のいずれか一項に記載の露光装置を用いて基板上にデバイスパターンを転写することを特徴とするデバイス製造方法。
- 41投影光学系と液体とを介して基板を露光する露光方法であって、 前記投影光学系が配置される第1領域と、所定方向に関して前記第1領域の一側に位置する第2領域とを含む領域内で、前記基板を載置する第1ステージを移動することと、 前記第1領域と、前記所定方向に関して前記第1領域の他側に位置する第3領域とを含む領域内で、前記第1ステージとは独立して第2ステージを移動することと、 前記投影光学系の直下に液体を供給して形成される液浸領域を介して、前記第1ステージに載置される基板を露光することと、 前記投影光学系と前記第1ステージとの間に前記液浸領域が維持される第1状態と、前記投影光学系と前記第2ステージとの間に前記液浸領域が維持される第2状態との一方が他方に遷移するように、前記投影光学系の直下に前記液浸領域を維持しつつ、前記所定方向に関して前記第1、第2ステージを移動することと、を含む。
- 42請求項41に記載の露光方法において、 前記第1、第2ステージは、前記遷移においてその対向する側面が、前記第1状態から前記第2状態への遷移と前記第2状態から前記第1状態への遷移とで同一となるように移動される。
- 43請求項41又は42に記載の露光方法において、 前記第2ステージは、前記第2状態で実行される所定の計測に用いられる。
- 44請求項43に記載の露光方法において、 前記計測は、前記投影光学系及び前記液体を介して行われる。
- 45請求項43又は44に記載の露光方法において、 前記計測は、前記第1ステージに載置される基板のマーク検出及び/又は交換と並行して行われる。
- 46請求項41~45のいずれか一項に記載の露光方法において、 前記第2ステージは、前記基板の載置領域が設けられていない。
- 47請求項41又は42に記載の露光方法において、 前記第1ステージに載置される基板はその露光動作に先立ち、前記第2領域に配置される第1マーク検出系によるマーク検出が行われ、 前記第2ステージに載置される基板はその露光動作に先立ち、前記第3領域に配置される第2マーク検出系によるマーク検出が行われ、 前記第1、第2ステージの一方に載置される基板の露光と、前記第1、第2ステージの他方に載置される基板のマーク検出とは並行して行われる。
- 48投影光学系と液体とを介して基板を露光する露光方法であって、 前記投影光学系の直下に液体を供給して形成される液浸領域を介して、第1ステージに載置される基板を露光することと、 前記投影光学系と前記第1ステージとの間に前記液浸領域が維持される第1状態と、前記投影光学系と前記第1ステージとは独立して移動可能な第2ステージとの間に前記液浸領域が維持される第2状態との一方が他方に遷移するように、前記投影光学系の直下に前記液浸領域を維持しつつ、前記投影光学系の下方で前記第1、第2ステージを移動することと、を含み、 前記第1、第2ステージは、前記遷移においてその対向する側面が、前記第1状態から前記第2状態への遷移と、前記第2状態から前記第1状態への遷移とで同一となるように移動される。
- 49請求項48に記載の露光方法において、 前記第1、第2ステージは、前記第1状態から前記第2状態への遷移において前記第1ステージの第1側面と前記第2ステージの第2側面とが対向するように配置され、かつ前記第2状態から前記第1状態への遷移においても前記第1側面と前記第2側面とが対向するように配置される。
- 50投影光学系と液体とを介して基板を露光する露光方法であって、 前記投影光学系の直下に液体を供給して形成される液浸領域を介して、第1ステージに載置される基板を露光することと、 前記投影光学系と前記第1ステージとの間に前記液浸領域が維持される第1状態と、前記投影光学系と前記第1ステージとは独立して移動可能な第2ステージとの間に前記液浸領域が維持される第2状態との一方が他方に遷移するように、前記投影光学系の直下に前記液浸領域を維持しつつ、前記投影光学系の下方で前記第1、第2ステージを移動することと、を含み、 前記第1、第2ステージは、前記第1状態から前記第2状態への遷移において前記第1ステージの第1側面と前記第2ステージの第2側面とが対向するように配置され、かつ前記第2状態から前記第1状態への遷移においても前記第1側面と前記第2側面とが対向するように配置される。
- 51請求項48~50のいずれか一項に記載の露光方法において、 前記第1、第2ステージはそれぞれ、前記投影光学系が配置される第1領域と、前記第1領域と異なる第2領域との一方から他方に移動され、かつ前記第1領域から前記第2領域への移動と前記第2領域から前記第1領域への移動とで逆の経路を辿るように移動される。
- 52投影光学系と液体とを介して基板を露光する露光方法であって、 前記投影光学系の直下に液体を供給して形成される液浸領域を介して、第1ステージに載置される基板を露光することと、 前記投影光学系と前記第1ステージとの間に前記液浸領域が維持される第1状態と、前記投影光学系と前記第1ステージとは独立して移動可能な第2ステージとの間に前記液浸領域が維持される第2状態との一方が他方に遷移するように、前記投影光学系の直下に前記液浸領域を維持しつつ、前記投影光学系の下方で前記第1、第2ステージを移動することと、を含み、 前記第1、第2ステージはそれぞれ、前記投影光学系が配置される第1領域と、前記第1領域と異なる第2領域との一方から他方に移動され、かつ前記第1領域から前記第2領域への移動と前記第2領域から前記第1領域への移動とで逆の経路を辿るように移動される。
- 53請求項51又は52に記載の露光方法において、 前記第1、第2領域は所定方向に関して位置が異なり、 前記第1、第2ステージは、前記遷移において前記所定方向に移動される。
- 54請求項51~53のいずれか一項に記載の露光方法において、 前記基板は、前記第2領域に配置されるマーク検出系によるマーク検出が行われる。
- 55請求項51~54のいずれか一項に記載の露光方法において、 前記第2領域において、前記第1ステージに載置される基板の交換が行われる。
- 56請求項48~55のいずれか一項に記載の露光方法において、 前記基板は走査露光が行われ、 前記第1、第2ステージは、前記遷移において、前記走査露光時に前記基板が移動される方向と直交する所定方向に移動される。
- 57請求項48~56のいずれか一項に記載の露光方法において、 前記基板は、前記投影光学系と所定方向に関して位置が異なるマーク検出系によるマーク検出が行われ、 前記第1、第2ステージは、前記遷移において前記所定方向に移動される。
- 58請求項48~57のいずれか一項に記載の露光方法において、 前記第2ステージは、前記基板を載置し、前記第2状態において前記載置した基板を前記液浸領域に対して相対的に移動する。
- 59請求項58に記載の露光方法において、 複数の基板の露光動作において、前記第1ステージに載置される基板の露光動作と、前記第2ステージに載置される基板の露光動作とが交互に行われ、前記遷移がその露光動作の間に行われる。
- 60請求項58又は59記載の露光方法において、 前記基板はその露光動作に先立ち、マーク検出系によってマークの検出が行われる。
- 61請求項60に記載の露光方法において、 前記第1、第2ステージは、前記第1、第2ステージの一方に載置される基板の露光動作と並行して、前記第1、第2ステージの他方に載置される基板のマーク検出動作が実行されるように移動される。
- 62請求項60又は61に記載の露光方法において、 前記遷移において、前記第1、第2ステージの一方は露光後の基板が載置され、前記第1、第2ステージの他方はマーク検出後の基板が載置される。
- 63請求項62に記載の露光方法において、 前記遷移前、前記マーク検出系によって前記他方のステージの基準マークが検出される。
- 64請求項63に記載の露光方法において、 前記遷移後、前記他方のステージはその基準マークが前記投影光学系の直下を通るように移動される。
- 65請求項63又は64に記載の露光方法において、 前記遷移後、前記投影光学系と前記液体とを介して、前記露光に用いられるマスクのマークと前記他方のステージの基準マークとの検出が行われる。
- 66請求項61~65のいずれか一項に記載の露光方法において、 前記遷移後、前記一方のステージは、所定の基板交換位置に移動されて前記基板の交換が行われ、かつその交換後の基板のマーク検出が行われる。
- 67請求項60~66のいずれか一項に記載の露光方法において、 前記基板は、前記露光が前記液体を介して行われ、前記マーク検出が液体を介することなく行われる。
- 68請求項58~67のいずれか一項に記載の露光方法において、 前記第1、第2ステージはそれぞれ、前記基板の載置領域の周囲領域の表面とその表面がほぼ面一となるように前記基板をその載置領域に載置する。
- 69請求項68に記載の露光方法において、 前記第1、第2ステージはそれぞれ、その表面が前記周囲領域の表面とほぼ面一となる基準マーク部材が設けられる。
- 70請求項48~69のいずれか一項に記載の露光方法において、 前記第1、第2ステージは、前記第1状態から前記第2状態への遷移において対向して配置される上端部が、前記第2状態から前記第1状態への遷移においても対向して配置される。
- 71請求項41~70のいずれか一項に記載の露光方法において、 前記第1、第2状態の間の過渡状態では、前記第1、第2ステージの両方によって前記液浸領域が前記投影光学系の直下に維持される。
- 72請求項41~71のいずれか一項に記載の露光方法において、 前記第1、第2ステージは、前記遷移において近接あるいは接触した状態で移動される。
- 73請求項41~72のいずれか一項に記載の露光方法において、 前記第1、第2ステージは、前記遷移において、前記投影光学系の直下に前記液浸領域が維持されるように近接した状態、あるいは、前記液体の漏出が防止または抑制されるように近接した状態で移動される。
- 74請求項41~73のいずれか一項に記載の露光方法において、 前記第1、第2ステージは、所定方向に関して接近するように相対移動され、かつ前記遷移において前記接近した状態で前記所定方向に移動される。
- 75請求項41~74のいずれか一項に記載の露光方法において、 前記第1、第2ステージは、前記遷移において所定方向に関してその位置関係が維持されつつ同時に移動される。
- 76請求項74又は75に記載の露光方法において、 前記第1、第2ステージは、前記所定方向に関して接近するための相対移動と、前記所定方向と直交する方向に関する位置関係の調整とが行われる。
- 77請求項41~76のいずれか一項に記載の露光方法において、 前記遷移において前記第1、第2ステージの間隙からの前記液体の漏れを抑制することを含む。
- 78請求項77に記載の露光方法において、 前記遷移において、前記第1、第2ステージの間に配置される抑制部材によって前記液体の漏れが抑制される。
- 79請求項77又は78に記載の露光方法において、 前記遷移において、前記第1、第2ステージの少なくとも一方に着脱可能に設けられる抑制部材によって前記液体の漏れが抑制される。
- 80リソグラフィ工程を含むデバイス製造方法であって、 前記リソグラフィ工程では、請求項41~79のいずれか一項に記載の露光方法を用いて基板上にデバイスパターンを転写することを特徴とするデバイス製造方法。
Independent claims80
262 paragraphs, as filed
The present invention relates to a stage driving method and a stage device, an exposure device, an exposure method, and a device manufacturing method, and more specifically, a region including a first region in a two-dimensional plane to which a liquid is locally supplied can be moved. A stage driving method for driving two stages and a stage device suitable for carrying out the stage driving method, a liquid is supplied between the projection optical system and the substrate, and the substrate is exposed via the projection optical system and the liquid. The present invention relates to an exposure apparatus, an exposure method, and a device manufacturing method using the exposure apparatus and the exposure method.
Conventionally, in a lithography process for manufacturing electronic devices such as semiconductor elements (integrated circuits, etc.) and liquid crystal display elements, an image of a mask or reticle (hereinafter collectively referred to as reticle) pattern is projected via a projection optical system. A step-and-repeat method of transferring to each of a plurality of shot regions on a photosensitive substrate (hereinafter referred to as "substrate" or "wafer") such as a wafer or a glass plate coated with a resist (photosensitive agent). Reduced projection exposure devices (so-called steppers) and step-and-scan projection exposure devices (so-called scanning steppers (also called scanners)) are mainly used.
The resolution R of the projection optical system included in the projection exposure apparatus is expressed by Rayleigh's equation of the following equation (1).
R = k<sub>1</sub> Λ / NA ...... (1) Here, λ is the exposure wavelength, NA is the numerical aperture of the projection optical system, and k<sub>1</sub>Is the process factor. From this equation (1), the shorter the exposure wavelength (wavelength of the exposure light) used and the larger the numerical aperture (NA) of the projection optical system, the higher the resolution R. Therefore, the exposure wavelength used in projection exposure equipment has been shortened year by year due to the miniaturization of integrated circuits. Today, ArF excimer laser (wavelength 193 nm), which has a shorter wavelength than KrF excimer laser (wavelength 248 nm), is used as the light source. An excimer laser has also been put into practical use. In addition, the numerical aperture of the projection optical system is gradually increasing.
Depth of focus (DOF) is as important as resolution when exposing. The depth of focus δ is expressed by the following equation (2).
δ = k<sub>2</sub> Λ / NA<sup>2</sup> ......(2)
Where k<sub>2</sub>Is the process factor. From equations (1) and (2), it can be seen that the depth of focus δ becomes narrower when the exposure wavelength λ is shortened and the numerical aperture NA is increased (larger NA) in order to increase the resolution R. In the projection exposure apparatus, the surface of the wafer is aligned with the image plane of the projection optical system for exposure, and for that purpose, it is desirable that the depth of focus δ is wide to some extent.
However, the depth of focus is becoming narrower due to the shorter wavelength of the exposure light and the larger NA of the projection optical system. Further, it is certain that the exposure wavelength will be further shortened in the future, and if it is left as it is, the depth of focus will be too narrow, and there is a possibility that the focus margin during the exposure operation will be insufficient.
Therefore, an exposure apparatus using an immersion method has recently attracted attention as a method of substantially shortening the exposure wavelength and increasing (widening) the depth of focus as compared with the air. As an exposure apparatus using this immersion method, an exposure apparatus is known in which the lower surface of the projection optical system and the surface of the wafer are locally filled with a liquid such as water or an organic solvent (for example,). See Patent Document 1 below). In the exposure apparatus described in Patent Document 1, the resolution is obtained by utilizing the fact that the wavelength of the exposure light in the liquid is 1 / n times that in the air (n is the refractive index of the liquid, which is usually about 1.2 to 1.6). The depth of focus is expanded n times compared to the projection optical system (assuming that such a projection optical system can be manufactured) that can obtain the same resolution as the immersion method regardless of the immersion method. That is, the depth of focus can be substantially expanded n times as compared with that in air.
<p><patcit num="1"><text>International Publication No. 99/49 504 Pamphlet</text></patcit></p>
<p> However, in the exposure apparatus described in Patent Document 1, the liquid is temporarily recovered at the stage before the wafer stage is detached from directly under the projection optical system at the time of wafer replacement, and the space between the lower surface of the projection optical system and the wafer surface is changed from a wet state. It needs to be dry. However, if the liquid is collected and supplied every time the wafer is replaced in this way, it is certain that the time required for collecting and supplying the liquid will cause a decrease in the throughput of the exposure apparatus.</p><p> Further, as described above, when the optical path space on the image plane side of the projection optical system is changed from a wet state to a dry state, if the dry state continues, the lowermost end of the projection optical system, which is also called a tip lens, is formed. Water stains (water marks) may occur on the surface of optical members (lenses, glass plates, etc .: hereinafter referred to as "tip lenses"). When an optical member (for example, a prism) that is a constituent member of the autofocus mechanism is arranged near the tip lens, water stains (water marks) are formed on the surface of the optical member that is a constituent member of the autofocus mechanism. ) May occur. The occurrence of this water stain may cause a decrease in the transmittance of the projection optical system and flare, and may also cause deterioration of other imaging performance of the projection optical system. Further, when a watermark is generated on the above prism or the like, there is a possibility that the alignment accuracy when aligning the surface of the wafer with the image plane of the projection optical system by the autofocus method is lowered. Further, when the watermark is severely generated, it is necessary to replace the tip lens and the optical member, but the time required for the replacement becomes a factor of lowering the operating rate of the exposure apparatus. In addition, in this specification, a stain formed on a tip lens or the like when a liquid other than water is used is also referred to as a water stain (water mark).</p>
<p> The present invention has been made under the above-mentioned circumstances, and from the first viewpoint, the first region in the two-dimensional plane to which the liquid is locally supplied and one of the first regions in the first axial direction. In a stage driving method in which the first stage and the second stage are independently driven within a predetermined range including the second region located on the side, one of the first and second stages is When the other stage transitions from the first state located in the first region to the second state located in the first region, the first stage and the second stage move in the first axial direction. A first stage driving method, characterized in that the first and second stages are simultaneously driven in the second axial direction while maintaining either a close state or a contact state with respect to the second axial direction intersecting with the above. Is.</p><p> Here, the "state in which the first stage and the second stage are close to each other" means that the liquid does not leak from between the first stage and the second stage, or the liquid does not leak so much as the first stage. Refers to the state in which the second stage is in close proximity. However, the permissible value of the interval between the first stage and the second stage differs depending on the material of both stages, the type of liquid, and the like. In this specification, the expression "a state in which the first stage and the second stage are close to each other" is used in this sense.</p><p> According to this, within a predetermined range including a first region in the two-dimensional plane to which the liquid is locally supplied and a second region located on one side of the first region in the first axial direction. When driving the first stage and the second stage independently, a transition is made from a first state in which one stage is located in the first region to a second state in which the other stage is located in the first region. In this case, the first and second stages are simultaneously driven in the second axial direction while maintaining a state of being close to each other or in contact with each other with respect to the second axial direction intersecting the first axial direction. This prevents liquid from leaking from the gap between the first and second stages (both stages) while the immersion region is formed on at least one of the first and second stages. It is possible to transition from the first state to the second state while suppressing it. That is, from the state where the liquid is held on one stage, the state where the liquid is held over both stages, and then the state where the liquid is held on the other stage, the entire liquid is recovered and again. It is possible to make a transition without going through the process of supplying. Therefore, the transition from the first state to the second state can be performed in a short time.</p><p> From a second point of view, the present invention includes a first region in a two-dimensional plane to which a liquid is locally supplied and a second region located on one side of the first region in the first axial direction. The first stage is driven within the region of the range, and the second stage is driven within the region of a predetermined range including the first region and the third region located on the other side of the first region in the first axial direction. In the stage driving method, one of the first and second stages is transitioned from a first state in which the first region is located to a second state in which the other stage is located in the first region. At that time, the first stage and the second stage are simultaneously driven in the first axial direction while maintaining either a state in which the first stage and the second stage are close to each other or in contact with each other in the first axial direction. This is a second stage driving method characterized by the above.</p><p> According to this, the first region in a predetermined range including the first region in the two-dimensional plane to which the liquid is locally supplied and the second region located on one side of the first region in the first axial direction. When driving one stage and driving the second stage within a predetermined range including the first region and the third region located on the other side of the first region in the first axial direction, one stage is driven. When transitioning from the first state where is located in the first region to the second state where the other stage is located in the first region, the first stage and the second stage are in close proximity to each other in the first axial direction. And are driven simultaneously in the first axial direction while maintaining either of the contacted states. As a result, while the immersion region is formed on at least one of the first and second stages, the leakage of the liquid from the gap between the first and second stages is prevented or suppressed. The transition from the first state to the second state is possible. That is, from the state where the liquid is held on one stage, the state where the liquid is held over both stages, and then the state where the liquid is held on the other stage, the entire liquid is recovered and again. It is possible to make a transition without going through the process of supplying. Therefore, the transition from the first state to the second state can be performed in a short time.</p><p> From a third point of view, the present invention includes a first region in a two-dimensional plane to which a liquid is locally supplied and a second region located on one side of the first region in the first axial direction. The first and second stages that can be driven independently within the region of the range; from the first state in which one of the first and second stages is located in the first region to the first stage. When transitioning to the second state located in one region, either the first stage and the second stage are in close proximity or in contact with each other with respect to the second axial direction intersecting the first axial direction. This is a first stage device including a control device for controlling the first and second stages so that the first and second stages move simultaneously in the second axial direction.</p><p> According to this, from the first state in which one of the first and second stages is located in the first region in the two-dimensional plane to which the liquid is locally supplied, the other stage moves to the first region. When transitioning to the second state in which it is located, the control device keeps the first and second stages close to each other or in contact with each other with respect to the second axis direction intersecting the first axis direction, and the second axis. It is controlled to move in the direction at the same time. This prevents liquid from leaking from the gap between the first and second stages (both stages) while the immersion region is formed on at least one of the first and second stages. It is possible to transition from the first state to the second state while suppressing it. That is, from the state where the liquid is held on one stage, the state where the liquid is held over both stages, and then the state where the liquid is held on the other stage, the entire liquid is recovered and again. It is possible to make a transition without going through the process of supplying. Therefore, the transition from the first state to the second state can be performed in a short time.</p><p> From a fourth point of view, the present invention includes a first region in a two-dimensional plane to which a liquid is locally supplied and a second region located on one side of the first region in the first axial direction. A first stage that is movable within a region of the range; a second stage that is movable within a predetermined range including the first region and a third region located on the other side of the first region in the first axial direction. With two stages; when one of the first and second stages transitions from the first state located in the first region to the second state in which the other stage is located in the first region. The first and second stages move simultaneously in the first axial direction while maintaining either a close state or a contact state with respect to the first axial direction. A second stage device including a control device for controlling the first and second stages;</p><p> According to this, one of the first and second stages is located in the first region in the two-dimensional plane to which the liquid is locally supplied, and the other stage is the first region from the first state. When transitioning to the second state located in, the control device keeps the first stage and the second stage in either a close state or a contact state with respect to the first axial direction in the first axial direction. Is controlled to move at the same time. As a result, while the immersion region is formed on at least one of the first and second stages, the leakage of the liquid from the gap between the first and second stages is prevented or suppressed. The transition from the first state to the second state is possible. That is, from the state where the liquid is held on one stage, the state where the liquid is held over both stages, and then the state where the liquid is held on the other stage, the entire liquid is recovered and again. It is possible to make a transition without going through the process of supplying. Therefore, the transition from the first state to the second state can be performed in a short time.</p><p> From the fifth viewpoint, the present invention is an exposure apparatus that supplies a liquid between the projection optical system and the substrate and exposes the substrate with an energy beam via the projection optical system and the liquid. A first stage that can move within a predetermined range including a first region directly below the projection optical system to which the liquid is supplied and a second region located on one side of the projection optical system in the first axial direction. And; a second stage that is movable within a region that includes the first region and a third region located on the other side of the projection optical system in the first axial direction; drives the first and second stages. At the same time, when one stage transitions from the first state in which the first region is located to the second state in which the other stage is located in the first region, the first stage and the second stage , A stage drive system that simultaneously drives the first and second stages in the first axial direction while maintaining either a close state or a contact state with respect to the first axial direction; arranged above the second region. The first mark detection system that detects the mark existing on the first stage; and the second mark detection system that is arranged above the third region and detects the mark existing on the second stage. It is the first exposure apparatus equipped with ;.</p><p> According to this, when transitioning from the first state in which one stage is located in the first region directly under the projection optical system to which the liquid is supplied to the second state in which the other stage is located in the first region, The stage drive system keeps the first and second stages in close proximity or in contact with each other in the first axial direction, and drives the first and second stages simultaneously in the first axial direction. Therefore, while holding the liquid between the projection optical system and at least one stage immediately below the projection optical system, while preventing or suppressing the leakage of the liquid from the gap between the first and second stages, It is possible to transition from the first state to the second state. That is, after the exposure operation of the substrate via the projection optical system and the liquid is performed using one stage, until the exposure operation of the substrate via the projection optical system and the liquid is started using the other stage. From the state where the liquid is held between one stage and the projection optical system, through the state where the liquid is held between both stages and the projection optical system, and then between the other stage and the projection optical system. It is possible to make a transition to a state in which the liquid is held between the liquid and the liquid without going through the steps of total recovery of the liquid and resupply. Therefore, it is possible to start the exposure operation on the substrate on the other stage in a short time after the exposure operation on the substrate on one stage is completed. Further, since the liquid is always present on the image plane side of the projection optical system, it is necessary to effectively prevent the above-mentioned water stain (water mark) from occurring on the optical member on the image plane side of the projection optical system. Can be done. In addition, the exposure operation on the substrate on the first stage and the mark detection operation (alignment operation) on the substrate on the second stage by the second mark detection system, and the exposure operation and the first mark detection on the substrate on the second stage. The mark detection operation (alignment operation) of the substrate on the first stage by the system can be performed in parallel, and the substrate replacement, mark detection (alignment) and exposure operation can be performed sequentially using one stage. It is expected that the throughput will be improved compared to the case where it is performed.</p><p> From the sixth viewpoint, the present invention is an exposure apparatus that supplies a liquid between a projection optical system and a substrate and exposes the substrate with an energy beam via the projection optical system and the liquid. The substrate can be moved within a predetermined range including a first region directly below the projection optical system to which the liquid is supplied and a second region located on one side of the first region in the first axial direction. A first stage that can be placed; a third that is movable within a region that includes the first region and a third region located on the other side of the first region in the first axial direction, and is used for a predetermined measurement. With two stages; while driving the first and second stages, one stage transitions from the first state located in the first region to the second state in which the other stage is located in the first region. At that time, the first stage and the second stage are kept close to each other or in contact with each other in the first axial direction, and the first stage and the second stage are brought into contact with each other in the first axial direction. It is a second exposure device equipped with a stage drive system and;</p><p> According to this, when one stage transitions from the first state located in the first region directly under the projection optical system to which the liquid is supplied to the second state in which the other stage is located in the first region, The stage drive system keeps the first and second stages in close proximity or in contact with each other in the first axial direction, and drives the first and second stages simultaneously in the first axial direction. Therefore, while the liquid is held between the projection optical system and at least one stage immediately below the projection optical system, leakage of the liquid from the gap between the first stage and the second stage is prevented or suppressed. At the same time, it is possible to transition from the first state to the second state. That is, after the exposure operation of the substrate on the first stage via the projection optical system and the liquid is performed, and before the measurement is started directly under the projection optical system using the second stage, the first stage is performed. From the state where the liquid is held between the 1st stage and the projection optical system, through the state where the liquid is held between both stages and the projection optical system, and then between the 2nd stage and the projection optical system, the liquid It is possible to make a transition to the state in which the liquid is retained without going through the steps of total recovery of the liquid and resupply. The same applies from the end of the measurement by the second stage to the start of the exposure by the first stage. Therefore, it is possible to start the measurement operation using the second stage after the end of the exposure operation on the substrate on the first stage and the exposure operation on the substrate on the first stage after the end of the measurement using the second stage in a short time. It is possible to improve the throughput. Further, since the liquid is always present on the image plane side of the projection optical system, it is necessary to effectively prevent the above-mentioned water stain (water mark) from occurring on the optical member on the image plane side of the projection optical system. Can be done. Further, the exposure operation of the substrate using the first stage and the measurement operation using the second stage can be performed in parallel depending on the measurement operation.</p><p> From the seventh viewpoint, the present invention is an exposure apparatus that supplies a liquid between a projection optical system and a substrate and exposes the substrate via the projection optical system and the liquid, wherein the liquid is A first stage that is movable within a predetermined range including a first region directly below the projected optical system and a second region located on one side of the first region in the first axial direction; A second stage that can move independently of the first stage within a region including one region and the second region; while driving the first and second stages, one stage is the first region. When the other stage transitions from the first state located in the first state to the second state located in the first region, the first stage and the second stage intersect in the first axial direction. It is a third exposure apparatus provided with a stage drive system that simultaneously drives the first and second stages in the second axial direction while maintaining either a close state or a contact state in the axial direction.</p><p> According to this, when transitioning from the first state in which one stage is located in the first region directly under the projection optical system to which the liquid is supplied to the second state in which the other stage is located in the first region, The stage drive system keeps the first and second stages in close proximity or in contact with each other in the second axial direction (the direction in which the first and second regions intersect in the first direction). The first and second stages are driven simultaneously in the second axial direction. Therefore, while the liquid is held between the projection optical system and at least one stage immediately below the projection optical system, leakage of the liquid from the gap between the first stage and the second stage is prevented or suppressed. At the same time, it is possible to transition from the first state to the second state. That is, after the substrate exposure operation via the projection optical system and the liquid is performed on one stage side, and until the substrate exposure operation via the projection optical system and the liquid is started on the other stage side. From the state where the liquid is held between one stage and the projection optical system, through the state where the liquid is held between both stages and the projection optical system, and then between the other stage and the projection optical system. It is possible to make a transition to a state in which the liquid is held between them without going through the steps of total recovery of the liquid and resupply. Therefore, after the exposure operation on the substrate on one stage is completed, the exposure operation on the substrate on the other stage can be started in a short time, and the throughput can be improved. Further, since the liquid is always present on the image plane side of the projection optical system, it is necessary to effectively prevent the above-mentioned water stain (water mark) from occurring on the optical member on the image plane side of the projection optical system. Can be done.</p><p> From the eighth viewpoint, the present invention is an exposure apparatus that supplies a liquid between a projection optical system and a substrate and exposes the substrate via the projection optical system and the liquid. A first stage that can be moved within a region including a first region directly under the supplied projection optical system and a region different from the first region; and includes the first region and a region different from the first region. With a second stage that can move independently of the first stage within the region; while driving the first and second stages, one stage from the first state located in the first region to the other When the stage is transitioned to the second state located in the first region, the first and second stages are moved while maintaining a state in which the first stage and the second stage are close to each other in a predetermined direction. A stage drive system that simultaneously drives in the predetermined direction; is provided in at least one of the first stage and the second stage, and is provided in a gap between the two stages when transitioning from the first state to the second state. It is a fourth exposure apparatus including a suppressing member that suppresses leakage of the liquid from the gap by being positioned.</p><p> According to this, one of the first and second stages that can be moved within the region including the first region directly under the projection optical system and the region different from the first region is located in the first region. When transitioning from the state to the second state in which the other stage is located in the first region, the first stage and the second stage are brought close to each other in the first axial direction, and the first and second stages Since the suppressing member for suppressing liquid leakage provided on at least one of the stages is simultaneously driven in the predetermined direction in a state of being located in the gap between the two stages, when transitioning from the first state to the second state, It is possible to suppress the leakage of liquid between the two stages as much as possible.</p><p> Further, in the lithography process, by exposing the substrate with the energy beam using each of the first to fourth exposure apparatus of the present invention, the device pattern can be accurately transferred onto the substrate, and as a result, the device pattern can be accurately transferred. It is possible to improve the productivity of highly integrated microdevices. Therefore, from yet another point of view, it can be said that the present invention is a device manufacturing method including a lithography step of exposing a substrate with the energy beam using any of the first to fourth exposure devices of the present invention.</p>
<figref num="1">It is the schematic which shows the exposure apparatus which concerns on 1st Embodiment.</figref><figref num="2">It is a top view which shows the wafer stage apparatus which concerns on 1st Embodiment.</figref><figref num="3">It is a perspective view which shows the wafer stage WST1 of FIG.</figref><figref num="4">It is a schematic plan view which shows the liquid supply and discharge mechanism.</figref><figref num="5">It is a block diagram which shows the main structure of the control system of the exposure apparatus of 1st Embodiment.</figref><figref num="6">It is a figure (the 1) for demonstrating the driving method of two wafer stages in a parallel processing operation.</figref><figref num="7">It is a figure (2) for demonstrating the driving method of two wafer stages in a parallel processing operation.</figref><figref num="8">It is a figure (3) for demonstrating the driving method of two wafer stages in a parallel processing operation.</figref><figref num="9">It is a figure (4) for demonstrating the driving method of two wafer stages in a parallel processing operation.</figref><figref num="10">It is a figure which shows the elastic seal member.</figref><figref num="11">It is a block diagram which shows the main structure of the control system of the exposure apparatus of 2nd Embodiment.</figref><figref num="12">It is a top view which shows the wafer stage apparatus which concerns on 2nd Embodiment.</figref><figref num="13">It is a figure (the 1) for demonstrating the driving method of two wafer stages in the parallel processing operation which concerns on 2nd Embodiment.</figref><figref num="14">It is a figure (the 2) for demonstrating the driving method of two wafer stages in the parallel processing operation which concerns on 2nd Embodiment.</figref><figref num="15">It is a figure (the 3) for demonstrating the driving method of two wafer stages in the parallel processing operation which concerns on 2nd Embodiment.</figref><figref num="16">It is a top view which shows the wafer stage apparatus which concerns on 3rd Embodiment.</figref><figref num="17">It is a figure (the 1) for demonstrating the driving method of the wafer stage and the measurement stage in the parallel processing operation which concerns on 3rd Embodiment.</figref><figref num="18">It is a figure (the 2) for demonstrating the driving method of the wafer stage and the measurement stage in the parallel processing operation which concerns on 3rd Embodiment.</figref><figref num="19">It is a figure for demonstrating the modification of the restraining member.</figref><figref num="20">It is a top view which shows the wafer stage apparatus which concerns on 4th Embodiment.</figref><figref num="21">It is a figure which shows the state which the wafer stage and the measurement stage are close to each other.</figref><figref num="22">It is a figure (the 1) for demonstrating the driving method of the wafer stage and the measurement stage in the parallel processing operation which concerns on 4th Embodiment.</figref><figref num="23">It is a figure (the 2) for demonstrating the driving method of the wafer stage and the measurement stage in the parallel processing operation which concerns on 4th Embodiment.</figref><figref num="24">It is a figure (the 1) for demonstrating the modification of the 4th Embodiment.</figref><figref num="25">It is a figure (the 2) for demonstrating the modification of the 4th Embodiment.</figref><figref num="26">It is a flowchart for demonstrating the device manufacturing method which concerns on this invention.</figref><figref num="27">It is a flowchart which shows the specific example of step 204 of FIG.</figref>
<< First Embodiment >> Hereinafter, the first embodiment of the present invention will be described with reference to FIGS. 1 to 10.
FIG. 1 shows a schematic configuration of the exposure apparatus 100 of the first embodiment. The exposure device 100 is a step-and-scan type projection exposure device, that is, a so-called scanning stepper (also called a scanner). The exposure device 100 includes an illumination system 10, a reticle stage RST holding a reticle R as a mask, a projection unit PU, a wafer stage device 50 having wafer stages WST1 and WST2, and off as first and second mark detection systems. It is equipped with Axis Alignment Systems ALG1, ALG2, and their control systems. Wafers as substrates are placed on the wafer stages WST1 and WST2. In FIG. 1, the wafer W1 is mounted on the wafer stage WST1 and the wafer W2 is mounted on the wafer stage WST2.
The illumination system 10 is an illuminance uniforming optical system including a light source, an optical integrator, and the like, as disclosed in, for example, Japanese Patent Application Laid-Open No. 2001-313250 and the corresponding US Patent Application Publication No. 2003/0025890. , Beam splitter, relay lens, variable ND filter, reticle blind, etc. (all not shown). In this illumination system 10, the slit-shaped illumination region on the reticle R defined by the reticle blind is illuminated with an illumination light (exposure light) IL as an energy beam with substantially uniform illuminance. Here, as the illumination light IL, ArF excimer laser light (wavelength 193 nm) is used as an example. Further, as the optical integrator, a fly-eye lens, a rod integrator (internal reflection type integrator), a diffractive optical element, or the like can be used. In addition, as the lighting system 10, for example, the configuration disclosed in Japanese Patent Application Laid-Open No. 6-349701 and the corresponding US Pat. No. 5,534,970 may be adopted. To the extent permitted by the national legislation of the designated country (or selected country of choice) designated in this international application, the description of this specification is made with reference to each of the above publications and the corresponding publication of the US patent application or disclosure in the US patent. Part of it.
On the reticle stage RST, a reticle R on which a circuit pattern or the like is formed on the pattern surface (lower surface in FIG. 1) is fixed by, for example, vacuum suction. The reticle stage RST is aligned with the optical axis of the illumination system 10 (corresponding to the optical axis AX of the projection optical system PL described later) by the reticle stage drive unit 11 (not shown in FIG. 1 but see FIG. 5) including, for example, a linear motor. It can be driven minutely in a vertical XY plane, and can be driven at a scanning speed specified in a predetermined scanning direction (here, the Y-axis direction which is the direction orthogonal to the paper surface in FIG. 1).
The position of the reticle stage RST in the stage moving surface is constantly detected by the reticle laser interferometer (hereinafter referred to as reticle interferometer) 116 through the moving mirror 15 with a resolution of, for example, about 0.5 to 1 nm. Here, in reality, a Y moving mirror having a reflecting surface orthogonal to the Y axis direction and an X moving mirror having a reflecting surface orthogonal to the X axis direction are provided on the reticle stage RST, and these moving mirrors are provided. Correspondingly, a reticle Y interferometer and a reticle X interferometer are provided, and in FIG. 1, these are typically shown as a moving mirror 15 and a reticle interferometer 116. For example, the end surface of the reticle stage RST may be mirror-processed to form a reflecting surface (corresponding to the reflecting surface of the above-mentioned X moving mirror and Y moving mirror). Further, instead of the reflecting surface extending in the X-axis direction used for position detection in the scanning direction (Y-axis direction in this embodiment) of the reticle stage RST, at least one corner cube type mirror (for example, a retroreflector) is used. Is also good. Here, one of the reticle Y interferometer and the reticle X interferometer, for example, the reticle Y interferometer is a two-axis interferometer having two length measuring axes, and the reticle stage RST is based on the measured value of the reticle Y interferometer. In addition to the Y position, the rotation in the rotation direction (θz direction) around the Z axis can also be measured.
The measured value of the reticle interferometer 116 is sent to the main controller 20 (not shown in FIG. 1, see FIG. 5), and in the main controller 20, the X of the reticle stage RST is based on the measured value of the reticle interferometer 116. , Y, θz The position (and speed) of the reticle stage RST is controlled by calculating the positions in the directions and controlling the reticle stage drive unit 11 based on the calculation result.
Above the reticle R, TTR (Through The Reticle) using light of the exposure wavelength for simultaneously observing the reticle mark on the reticle R and the reference mark on the corresponding reference mark plate via the projection optical system PL. A pair of reticle alignment detection systems RAa and RAb composed of an alignment system are provided at a predetermined distance in the X-axis direction. As these reticle alignment detection systems RAa and RAb, those having the same configuration as those disclosed in, for example, Japanese Patent Application Laid-Open No. 7-176468 and the corresponding US Pat. No. 5,646,413 are used. To the extent permitted by the national legislation of the designated country (or selected country of choice) designated in this international application, the disclosures in the above gazette and corresponding US patents are incorporated herein by reference.
The projection unit PU is arranged below the reticle stage RST in FIG. The projection unit PU includes a lens barrel 40 and a projection optical system PL composed of a plurality of optical elements held in the lens barrel 40 in a predetermined positional relationship. As the projection optical system PL, for example, a refractive optics system composed of a plurality of lenses (lens elements) having a common optical axis AX in the Z-axis direction is used. This projection optical system PL has a predetermined projection magnification (for example, 1/4 times, 1/5 times, or 1/8 times) by telecentric on both sides. Therefore, when the illumination area of the reticle R is illuminated by the illumination light IL from the illumination system 10, the illumination light IL passing through the reticle R within the illumination area via the projection unit PU (projection optical system PL). A reduced image of the circuit pattern of the reticle R (a reduced image of a part of the circuit pattern) is formed on a wafer coated with a resist (photosensitive agent) on the surface.
In the exposure apparatus 100 of the present embodiment, since the exposure is performed by applying the immersion method as described later, the aperture on the reticle side becomes larger as the numerical aperture NA is substantially increased. For this reason, in a refractive optics system composed of only a lens, it becomes difficult to satisfy the Petzval condition, and the projection optical system tends to be large in size. In order to avoid such an increase in the size of the projection optical system, a catadioptric system (catadioptric system) including a mirror and a lens may be used.
Further, in the present embodiment, between (or the tip) the lens (hereinafter referred to as tip lens) 91 on the most image plane side (wafer side) constituting the projection optical system PL and the wafer on the wafer stage WST1 or WST2. A liquid supply / discharge system 32 for locally supplying liquid (between the lens 91 and the wafer stage WST1 or WST2) is provided. In FIG. 1, the nozzles constituting this liquid supply / discharge unit are typically shown as the liquid supply / discharge system 32. The configuration of the liquid supply / discharge system 32 will be described later.
The wafer stage device 50 includes a base plate 12, wafer stages WST1 and WST2 arranged above the upper surface of the base plate 12, and interferometers 18 and 16 for measuring the positions of these wafer stages WST1 and WST2. It includes an interferometer system 118 (see FIG. 5) as a position measuring device, and a wafer stage drive unit 124 (see FIG. 5) that drives the wafer stages WST1 and WST2.
Non-contact bearings (not shown), for example, vacuum preload type pneumatic static pressure bearings (hereinafter referred to as "air pads") are provided at a plurality of locations on the bottom surfaces of the wafer stages WST1 and WST2. Due to the static pressure of the pressurized air ejected toward the upper surface of the base plate 12, the wafer stages WST1 and WST2 are floated and supported above the upper surface of the base plate 12 through a clearance of about several μm. Further, the wafer stages WST1 and WST2 can be driven in two-dimensional directions independently in the X-axis direction (left-right direction in the paper surface in FIG. 1) and the Y-axis direction (orthogonal direction in the paper surface in FIG. 1) by the wafer stage drive unit 124. It is configured in.
As shown in the plan view of FIG. 2, X-axis linear guides 86 and 87 as a pair of X-axis stators extending in the X-axis direction are arranged on the base board 12 at predetermined intervals in the Y-axis direction. There is. These X-axis linear guides 86 and 87 are composed of, for example, a magnetic pole unit containing a permanent magnet group consisting of a plurality of pairs of N-pole magnets and S-pole magnets arranged at predetermined intervals and alternately along the X-axis direction. Has been done. Above these X-axis linear guides 86, 87, two sliders 82, 84 and 83, 85, respectively, are provided in a non-contact manner so as to surround the corresponding X-axis linear guides 86, 87 from above. That is, a total of four sliders 82, 84, 83, 85 have an inverted U-shaped cross section that surrounds the X-axis linear guide 86 or 87 from above and from the side, and the corresponding X-axis linear guide 86 or With respect to 87, it is levitated and supported via air pads (not shown), for example, through a clearance of about several μm. Each of the sliders 82, 84, 83, and 85 is composed of armature units each containing armature coils arranged at predetermined intervals along the X-axis direction, for example. That is, in the present embodiment, the moving coil type X-axis linear motor is configured by the sliders 82 and 84 including the armature unit and the X-axis linear guide 86 including the magnetic pole unit, respectively. Similarly, the sliders 83 and 85 and the X-axis linear guide 87 constitute a moving coil type X-axis linear motor, respectively. In the following, each of the above four X-axis linear motors uses the same reference numerals as the sliders 82, 84, 83, and 85 that constitute the respective movers, and the X-axis linear motor 82 and the X-axis linear motor are appropriately used. It shall be referred to as 84, X-axis linear motor 83, and X-axis linear motor 85.
Of the above four X-axis linear motors, the sliders that make up the two X-axis linear motors 82 and 83 are located at one end and the other end of the Y-axis linear guide 80 as Y stators that extend in the Y-axis direction. It is fixed. The sliders constituting the remaining two X-axis linear motors 84 and 85 are fixed to one end and the other end of the Y-axis linear guide 81 as a Y stator extending in the Y-axis direction. Therefore, the Y-axis linear guides 80 and 81 are driven along the X-axis by each pair of X-axis linear motors 82, 83 and 84, 85, respectively.
Each of the Y-axis linear guides 80 and 81 is composed of armature units incorporating armature coils arranged at predetermined intervals along the Y-axis direction, for example.
On the other hand, the Y-axis linear guide 81 is provided in an inserted state in the opening formed in the wafer stage WST1. Inside the opening of the wafer stage WST1, for example, a magnetic pole unit having a permanent magnet group consisting of a plurality of sets of N-pole magnets and S-pole magnets arranged at predetermined intervals and alternately along the Y-axis direction is provided. Has been done. The magnetic pole unit and the Y-axis linear guide 81 constitute a moving magnet type Y-axis linear motor that drives the wafer stage WST1 in the Y-axis direction. Similarly, the other Y-axis linear guide 80 is provided in an inserted state in the opening formed in the wafer stage WST2. Inside the opening of the wafer stage WST2, a magnetic pole unit similar to that on the wafer stage WST1 side is provided. The magnetic pole unit and the Y-axis linear guide 80 constitute a moving magnet type Y-axis linear motor that drives the wafer stage WST2 in the Y-axis direction. In the following, these Y-axis linear motors will be referred to as Y-axis linear motors 81 and Y-axis linear motors 80, using the same reference numerals as the linear guides 81 and 80 that form the stators, respectively. ..
In the present embodiment, the wafer stage drive unit 124 shown in FIG. 5 is configured including the X-axis linear motors 82 to 85 and the Y-axis linear motors 80 and 81. Each of the linear motors constituting the wafer stage drive unit 124 is controlled by the main control device 20 shown in FIG.
The yawing of the wafer stage WST1 (or WST2) can be controlled by slightly different thrusts generated by the pair of X-axis linear motors 84,85 (or 82,83).
In the present embodiment, each of the wafer stages WST1 and WST2 is shown as a single stage, but in reality, the stage body driven by the Y-axis linear motors 81 and 80 and the upper part of the stage body. It is mounted via a Z-leveling drive mechanism (for example, a voice coil motor), and the rotation direction around the Z-axis and X-axis (θx direction) and the rotation direction around the Y-axis (θy direction) with respect to the wafer stage body. It is equipped with a wafer table that is driven relatively minutely.
As shown in FIG. 1, a wafer holder H1 for holding the wafer W1 by vacuum suction or the like is provided on the wafer stage WST1 (more accurately, on the wafer table). As shown in the perspective view of FIG. 3, the wafer holder H1 has a substantially square main body 70 (when viewed from above) and a region on which the wafer W1 is placed so as to overlap the main body 70 from above. It is equipped with four auxiliary plates 72a to 72d arranged around the. The surfaces of these auxiliary plates 72a to 72d are set to have substantially the same height as the surface of the wafer W1. The auxiliary plates 72a to 72d may be composed of one member. Further, as long as the liquid Lq can be held on the image plane side of the projection optical system PL, there may be a step between the wafer surface and the auxiliary plate surface.
On the upper surface of the wafer stage WST1, an X-moving mirror 17X having a reflecting surface orthogonal to the X-axis at one end (+ X-side end) in the X-axis direction is extended in the Y-axis direction, and one end in the Y-axis direction (+ Y). A Y-moving mirror 17Y having a reflecting surface orthogonal to the Y-axis (at the side end) extends in the X-axis direction. As shown in FIG. 2, an interferometer beam (length measuring beam) from an interferometer constituting the interferometer system 118 (see FIG. 5) described later is projected onto each of the reflecting surfaces of these moving mirrors 17X and 17Y. Then, by receiving the reflected light with each interferometer, a fixed mirror is placed at the reference position of each moving mirror reflecting surface (generally, the side surface of the projection unit PU or the side surface of the alignment system ALG1 is used as the reference surface. ) Is measured, and the two-dimensional position of the wafer stage WST1 is measured by this. It is desirable that the upper surfaces of the moving mirrors 17X and 17Y also have almost the same height (flip) as the wafer W1.
Here, as shown in FIG. 3, there is a gap D between each of the auxiliary plates 72a to 72d and the wafer W1, but the dimension of the gap D is set to be 0.1 to 1 mm or less. ing. Further, the wafer W1 has a notch (V-shaped notch) in a part thereof, but the size of this notch is also about 1 mm, so the illustration is omitted.
Further, the auxiliary plate 72a has a circular opening formed in a part thereof, and the reference mark plate FM1 is fitted in the opening. The surface of the reference mark plate FM1 is almost the same as that of the auxiliary plate 72a. On the surface of the reference mark plate FM1, at least a pair of first reference marks for reticle alignment and a second reference mark detected by the alignment system ALG1 as described later (both not shown) are formed.
As shown in FIG. 1, a wafer holder H2 for holding the wafer W2 by vacuum suction or the like is provided on the wafer stage WST2 (more accurately, on the wafer table). The wafer holder H2 has the same configuration as the wafer holder H1 described above. Therefore, the reference mark plate FM2 (not shown in FIG. 1, see FIG. 2) is fitted in the circular opening formed in a part of one auxiliary plate constituting the wafer holder H2.
Further, on the upper surface of the wafer stage WST2, an X moving mirror 117X having a reflecting surface orthogonal to the X axis at one end (-X side end) in the X axis direction is extended in the Y axis direction, and one end in the Y axis direction (-X side end). A Y-moving mirror 117Y having a reflecting surface orthogonal to the Y-axis (at the + Y-side end) extends in the X-axis direction. As shown in FIG. 2, an interferometer beam (length measuring beam) from an interferometer constituting the interferometer system 118 described later is projected onto each of the reflecting surfaces of these moving mirrors 117X and 117Y, and the reflected light thereof. Is received by each interferometer to measure the displacement of each moving mirror reflecting surface from the reference position, whereby the two-dimensional position of the wafer stage WST2 is measured.
For example, the end faces of the wafer stages WST1 and WST2 may be mirror-processed to form a reflective surface (corresponding to the reflective surface of the above-mentioned moving mirrors 17X, 17Y, 117X, 117Y).
Further, as shown in FIG. 10, a seal member 93 is attached to the surfaces of the wafer stages WST1 and WST2 facing each other, for example, the -X side surface of the wafer stage WST1 over the entire surface. As the seal member 93, for example, an elastic seal member made of fluororubber or the like is used.
A seal member 93 may be attached to the + X side surface of the wafer stage WST2 instead of the -X side surface of the wafer stage WST1, or to both the -X side surface of the wafer stage WST1 and the + X side surface of the wafer stage WST2. The seal member 93 may be attached.
Returning to Fig. 1, the above-mentioned off-axis alignment system (hereinafter abbreviated as "alignment system") ALG1 and ALG2 are located at the same distances on the + X side and -X side of the projection unit PU, respectively. It is arranged. These alignment systems ALG1 and ALG2 are actually attached to a holding member that holds the projection unit PU. As these alignment systems ALG1 and ALG2, for example, the target mark is irradiated with a broadband detection light beam that does not expose the resist on the wafer, and the image of the target mark formed on the light receiving surface by the reflected light from the target mark is incompatible with the image of the target mark. An image processing method FIA (FIA) that captures an image of the illustrated index (index pattern on the index plate provided in the alignment system ALG1 and ALG2) using an image sensor (CCD, etc.) and outputs those imaged signals. Field Image Alignment) type sensors are used. The alignment systems ALG1 and ALG2 are not limited to the FIA system, but the target mark is irradiated with coherent detection light to detect scattered light or diffracted light generated from the target mark, or generated from the target mark2. Of course, it is possible to use an alignment sensor that detects by interfering with one diffracted light (for example, diffracted light of the same order or diffracted light diffracted in the same direction) alone or in combination as appropriate.
In the present embodiment, the alignment system ALG1 is used for measuring the positions of the alignment mark formed on the wafer W1 on the wafer stage WST1 and the reference mark formed on the reference mark plate FM1. Further, the alignment system ALG2 is used for measuring the positions of the alignment mark formed on the wafer W2 on the wafer stage WST2 and the reference mark formed on the reference mark plate FM2.
Information from these alignment systems ALG1 and ALG2 is supplied to the main control unit 20 as shown in FIG.
Next, the configuration of the interferometer system 118 and the like will be described with reference to FIG. As shown in FIG. 2, the interferometer system 118 has a projection center (optical axis AX) of the projection optical system PL, an alignment system ALG1 and ALG2, and a length measurement axis BI2Y parallel to the Y axis passing through each detection center. A length measurement axis parallel to the X axis connecting the three Y-axis interferometers 46, 48, and 44 having BI3Y and BI1Y, the projection center (optical axis AX) of the projection optical system PL, and the detection center of the alignment systems ALG1 and ALG2, respectively. It has two X-axis interferometers 16 and 18, which have BI1X and BI2X, respectively.
Here, when the wafer stage WST1 is in a region (first region) near the position directly below the optical axis of the projection optical system PL and the wafer on the wafer stage WST1 is exposed, the X-axis interferometer 18 and the Y-axis The position of the wafer stage WST1 is controlled by the interferometer 46. In the following, the coordinate system defined by the length measurement axes of the X-axis interferometer 18 and the Y-axis interferometer 46 will be referred to as the first exposure coordinate system.
Further, when the wafer stage WST2 has the projection optical system PL in the first region and the wafer on the wafer stage WST2 is exposed, the position of the wafer stage WST1 is determined by the X-axis interferometer 16 and the Y-axis interferometer 46. Be managed. In the following, the coordinate system defined by the length measurement axes of the X-axis interferometer 16 and the Y-axis interferometer 46 will be referred to as the second exposure coordinate system.
Further, the wafer stage WST1 is located in a region (second region) near the position immediately below the detection center of the alignment system ALG1, and the detection of the alignment mark formed on the wafer on the wafer stage WST1 is detected, for example, wafer alignment described later. When this is performed, the position of the wafer stage WST1 is controlled by the X-axis interferometer 18 and the Y-axis interferometer 48. In the following, the coordinate system defined by the length measurement axes of the X-axis interferometer 18 and the Y-axis interferometer 48 will be referred to as the first alignment coordinate system.
Further, the wafer stage WST2 is located in a region (third region) near the position immediately below the detection center of the alignment system ALG2, and the detection of the alignment mark formed on the wafer on the wafer stage WST2, for example, wafer alignment described later, etc. The position of the wafer stage WST2 is controlled by the X-axis interferometer 16 and the Y-axis interferometer 44. In the following, the coordinate system defined by the length measurement axes of the X-axis interferometer 16 and the Y-axis interferometer 44 will be referred to as a second alignment coordinate system.
As can be seen from the above description, in the present embodiment, the interferometer beams from the X-axis interferometers 18 and 16 are always the moving mirrors 17X, 117X of the wafer stages WST1 and WST2 over the entire moving range of the wafer stages WST1 and WST2. , Each of them is designed to hit. Therefore, in the X-axis direction, the positions of the wafer stages WST1 and WST2 are controlled by the X-axis interferometers 18 and 16 during exposure using the projection optical system PL and when using the alignment systems ALG1 and ALG2. Will be done. These X-axis interferometers 18 and 16 are multi-axis interferometers having at least three optical axes separated in the Y-axis direction and the Z-axis direction, and the output value of each optical axis can be measured independently. ing. Therefore, in these X-axis interferometers 18 and 16, in addition to the position measurement of the wafer stages WST1 and WST2 in the X-axis direction, the amount of rotation around the Y-axis (rolling amount) and the amount of rotation around the Z-axis (yaw amount) Measurement is possible.
Further, the Y-axis interferometers 44, 46, 48 are, for example, two-axis interferometers having two optical axes separated from each other in the Z-axis direction, and the output value of each optical axis can be measured independently. ing. Therefore, these Y-axis interferometers 44,46,48 can measure the amount of rotation (pitching amount) around the X-axis in addition to measuring the position of the wafer stage WST1 or WST2 in the Y-axis direction.
In addition, the above-mentioned multi-axis interferometer tilts 45 ° and uses a laser on the reflective surface installed on the gantry (not shown) on which the projection optical system PL is mounted via the reflective surface installed on the wafer stages WST1 and WST2. The beam may be irradiated to detect the relative position information regarding the optical axis direction (Z-axis direction) of the projection optical system PL.
Next, the liquid supply / discharge system 32 will be described with reference to FIG. The liquid supply / discharge system 32 includes a liquid supply device 5, a liquid recovery device 6, supply pipes 21, 22, 27, 28 connected to the liquid supply device 5, and recovery pipes 23, 24 connected to the liquid recovery device 6. , 29, 30 etc. are provided.
The liquid supply device 5 includes a liquid tank, a pressurizing pump, a temperature control device, and a plurality of valves for controlling the supply / stop of the liquid to the supply pipes 21, 22, 27, 28, respectively. ing. As each valve, for example, it is desirable to use a flow rate control valve so that not only the supply / stop of the liquid but also the flow rate can be adjusted. The temperature control device adjusts the temperature of the liquid in the liquid tank to a temperature similar to the temperature in a chamber (not shown) in which the exposure device main body including, for example, a projection unit PU or the like is housed.
One end of the supply pipe 21 is connected to the liquid supply device 5, the other end is branched into three, and supply nozzles 21a, 21b, and 21c composed of tapered nozzles are formed (or provided) at each branch end. )ing. The tips of these supply nozzles 21a, 21b, and 21c are located near the above-mentioned tip lens 91 (see FIG. 1), separated by a predetermined distance in the X-axis direction, and the exposure area IA (the above-mentioned illumination area on the slit). It is located close to the + Y side of the region on the image plane that is conjugate with. The supply nozzles 21b and 21c are arranged almost symmetrically with the supply nozzle 21a as the center.
One end of the supply pipe 22 is connected to the liquid supply device 5, the other end is branched into three, and supply nozzles 22a, 22b, and 22c composed of tapered nozzles are formed (or provided) at each branch end. )ing. The tips of these supply nozzles 22a, 22b, and 22c are located near the tip lens 91, at predetermined intervals in the X-axis direction, and close to the -Y side of the exposure region IA. In this case, the supply nozzles 22a, 22b, and 22c are arranged so as to face the supply nozzles 21a, 21b, and 21c with the exposure region IA in between.
One end of the supply pipe 27 is connected to the liquid supply device 5, and a supply nozzle 27a composed of a tapered nozzle is formed (or provided) at the other end. The tip of the supply nozzle 27a is located near the tip lens 91 and is located close to the -X side of the exposure region IA.
One end of the supply pipe 28 is connected to the liquid supply device 5, and a supply nozzle 28a composed of a tapered nozzle is formed (or provided) at the other end. The tip of the supply nozzle 28a is located near the tip lens 91, close to the + X side of the exposure region IA, and facing the supply nozzle 27a with the exposure region IA in between.
It is not necessary for the exposure device 100 to include all of the tank, pressurizing pump, temperature control device, valve, etc. for supplying the liquid, and at least a part of the tank, the pressurizing pump, the temperature control device, the valve, etc. It can be replaced by equipment.
The liquid recovery device 6 includes a liquid tank and a suction pump, and a plurality of valves for controlling the recovery and stop of the liquid via the recovery pipes 23, 24, 29, and 30, respectively. As each valve, it is desirable to use a flow rate control valve corresponding to the valve on the liquid supply device 5 side described above.
One end of the recovery pipe 23 is connected to the liquid recovery device 6, the other end is bifurcated, and recovery nozzles 23a and 23b composed of suehiro nozzles are formed (or provided) at each bifurcated end. .. In this case, the recovery nozzles 23a and 23b are alternately arranged between the supply nozzles 22a to 22c. The tips of the recovery nozzles 23a and 23b and the tips of the supply nozzles 22a, 22b and 22c are arranged substantially along the same straight line parallel to the X-axis.
One end of the recovery pipe 24 is connected to the liquid recovery device 6, the other end is bifurcated, and recovery nozzles 24a and 24b composed of suehiro nozzles are formed (or provided) at each bifurcated end. .. In this case, the recovery nozzles 24a and 24b are arranged alternately between the supply nozzles 21a to 21c and facing the recovery nozzles 23a and 23b with the exposure area IA interposed therebetween. The tips of the recovery nozzles 24a and 24b and the tips of the supply nozzles 21a, 21b and 21c are arranged substantially along the same straight line parallel to the X axis.
One end of the recovery pipe 29 is connected to the liquid recovery device 6, the other end is bifurcated, and recovery nozzles 29a and 29b composed of divergent nozzles are formed (or provided) at each bifurcated end. .. These recovery nozzles 29a and 29b are arranged so as to sandwich the supply nozzle 28a. The tips of the recovery nozzles 29a and 29b and the supply nozzle 28a are arranged substantially along the same straight line parallel to the Y axis.
One end of the recovery pipe 30 is connected to the liquid recovery device 6, the other end is bifurcated, and recovery nozzles 30a and 30b composed of suehiro nozzles are formed (or provided) at each bifurcated end. .. These recovery nozzles 30a and 30b are arranged so as to face the recovery nozzles 29a and 29b with the supply nozzle 27a and the exposure area IA sandwiched between them. The tips of the recovery nozzles 30a and 30b and the supply nozzle 27a are arranged substantially along the same straight line parallel to the Y axis.
It is not necessary for the exposure device 100 to include all of the tanks, suction pumps, valves, etc. for collecting the liquid, and at least a part of them should be replaced by equipment such as a factory where the exposure device 100 is installed. You can also.
In the present embodiment, as the liquid, ultrapure water (hereinafter, simply referred to as "water" unless otherwise required) through which ArF excimer laser light (light having a wavelength of 193 nm) is transmitted is used. Ultrapure water has the advantage that it can be easily obtained in large quantities at semiconductor manufacturing factories and the like, and that it does not adversely affect the resist (photosensitive agent) or optical lens applied on the wafer. Further, since ultrapure water has no adverse effect on the environment and has an extremely low content of impurities, it can be expected to have an effect of cleaning the surface of the wafer and the surface of the tip lens 91.
The refractive index n of water with respect to ArF excimer laser light is approximately 1.44. In this water, the wavelength of the illumination light IL is shortened to 193 nm × 1 / n = about 134 nm.
The liquid supply device 5 and the liquid recovery device 6 each include a controller, and each controller is controlled by the main control device 20 (see FIG. 5). For example, when moving the wafer W1 (or W2) in the direction indicated by the solid arrow A in FIG. 4, the controller of the liquid supply device 5 supplies the liquid according to the instruction from the main control device 20. The valve connected to the tube 21 is opened at a predetermined opening degree, the other valves are fully closed, and the tip lens 91 and the wafer W1 (or W2) are connected to each other via the supply nozzles 21a to 21c provided in the supply tube 21. In between, supply water in the -Y direction. At this time, the controller of the liquid recovery device 6 opens the valve connected to the recovery pipe 23 at a predetermined opening degree and fully closes the other valves in response to the instruction from the main control device 20, and the recovery nozzle 23a Water is recovered inside the liquid recovery device 6 from between the tip lens 91 and the wafer W1 (or W2) via 23b. At this time, the main control device 20 uses the amount of water supplied from the supply nozzles 21a to 21c in the -Y direction between the tip lens 91 and the wafer W1 (or W2) and the recovery nozzles 23a and 23b. A command is given to the liquid supply device 5 and the liquid recovery device 6 so that the amount of water recovered is always equal. Therefore, a certain amount of water Lq (see FIG. 1) is held between the tip lens 91 and the wafer W1 (or W2). In this case, the water Lq held between the tip lens 91 and the wafer W1 (or W2) is constantly replaced.
Further, when moving the wafer W1 (or W2) in the direction (+ Y direction) indicated by the dotted arrow A'in FIG. 4, the controller of the liquid supply device 5 responds to the instruction from the main control device 20. The valve connected to the supply pipe 22 is opened at a predetermined opening, the other valves are fully closed, and the tip lens 91 and the wafer W1 (or W2) are connected via the supply nozzles 22a to 22c provided in the supply pipe 22. Supply water in the + Y direction between. At this time, the controller of the liquid recovery device 6 opens the valve connected to the recovery pipe 24 at a predetermined opening degree and fully closes the other valves in response to the instruction from the main control device 20, and the recovery nozzle 24a Water is recovered inside the liquid recovery device 6 from between the tip lens 91 and the wafer W1 (or W2) via 24b. At this time, the main control device 20 is provided between the tip lens 91 and the wafer W1 (or W2) via the amount of water supplied from the supply nozzles 22a to 22c in the + Y direction and the recovery nozzles 24a and 24b. A command is given to the liquid supply device 5 and the liquid recovery device 6 so that the amount of water recovered is always equal. Therefore, a certain amount of water Lq (see FIG. 1) is held between the tip lens 91 and the wafer W1 (or W2). In this case, the water Lq held between the tip lens 91 and the wafer W1 (or W2) is constantly replaced.
As described above, in the present embodiment, since the supply nozzle group and the recovery nozzle group forming a pair with each other are provided on one side and the other side in the Y-axis direction with the exposure region IA in between, the wafer is + Y. When moving in either the direction or the -Y direction, the wafer W1 (or W2) and the tip lens 91 continue to be stably filled with water. That is, in both the so-called plus scan and minus scan, water can be stably held between the tip lens 91 and the wafer.
Further, since water flows on the wafer W1 (or W2), even if foreign matter (including scattered particles from the resist) is attached to the wafer W1 (or W2), the foreign matter is flushed with water. You can leave. Further, since water adjusted to a predetermined temperature is supplied by the liquid supply device 5 and the water is constantly replaced, even if the illumination light IL is irradiated on the wafer W1 (or W2) at the time of exposure, the wafer W1 (or W2) may be irradiated. Heat exchange is performed between the wafer and the water flowing on the wafer, and the temperature rise on the wafer surface can be suppressed. Further, in the present embodiment, since water flows in the same direction as the wafer is moved, the liquid that has absorbed foreign matter and heat can be recovered without staying in the exposure region directly below the tip lens.
Further, when moving the wafer W1 (or W2) in the direction (+ X direction) indicated by the solid arrow B in FIG. 4, the controller of the liquid supply device 5 responds to the instruction from the main control device 20. The valve connected to the supply pipe 27 is opened at a predetermined opening, the other valves are fully closed, and between the tip lens 91 and the wafer W1 (or W2) via the supply nozzle 27a provided in the supply pipe 27. Supply water in the + X direction. At this time, the controller of the liquid recovery device 6 opens the valve connected to the recovery pipe 29 at a predetermined opening degree and fully closes the other valves in response to the instruction from the main control device 20, and the recovery nozzle 29a Water is recovered inside the liquid recovery device 6 from between the tip lens 91 and the wafer W1 (or W2) via the tip lens 91 and 29b. At this time, the main control device 20 determines the amount of water supplied from the supply nozzle 27a between the tip lens 91 and the wafer W1 (or W2) and the amount of water recovered via the recovery nozzles 29a and 29b. A command is given to the liquid supply device 5 and the liquid recovery device 6 so that Therefore, a certain amount of water Lq (see FIG. 1) is held between the tip lens 91 and the wafer W1 (or W2). In this case, the water Lq held between the tip lens 91 and the wafer W1 (or W2) is constantly replaced.
Further, when moving the wafer W1 (or W2) in the direction (-X direction) indicated by the dotted arrow B'in FIG. 4, the controller of the liquid supply device 5 responds to the instruction from the main control device 20. , The valve connected to the supply pipe 28 is opened at a predetermined opening degree, the other valves are fully closed, and the tip lens 91 and the wafer W1 (or W2) are connected to each other via the supply nozzle 28a provided in the supply pipe 28. In between, supply water in the -X direction. At this time, the controller of the liquid recovery device 6 opens the valve connected to the recovery pipe 30 at a predetermined opening degree and fully closes the other valves in response to the instruction from the main control device 20, and the recovery nozzle 30a Water is recovered inside the liquid recovery device 6 from between the tip lens 91 and the wafer W1 (or W2) via the tip lens 91 and 30b. At this time, the main control device 20 determines the amount of water supplied from the supply nozzle 28a between the tip lens 91 and the wafer W1 (or W2) and the amount of water recovered via the recovery nozzles 30a and 30b. A command is given to the liquid supply device 5 and the liquid recovery device 6 so that Therefore, a certain amount of water Lq (see FIG. 1) is held between the tip lens 91 and the wafer W1 (or W2). In this case, the water Lq held between the tip lens 91 and the wafer W1 (or W2) is constantly replaced.
As a result, water is between the wafer and the tip lens 91 regardless of whether the wafer is moved in the + X direction or the -X direction, as in the case of moving the wafer W1 (or W2) in the Y-axis direction. Is stably filled. Therefore, during so-called inter-shot stepping, water can be continuously retained between the wafer and the tip lens 91 regardless of the stepping direction.
In the above, the case where water is held between the wafer and the tip lens has been described. However, as described above, the surface of the wafer and the surfaces of the wafer holders H1 and H2 are almost the same surface, so that the projection unit Even when the wafer holder H1 (or H2) is located at a position corresponding to the exposure area IA directly under the PU, water is transferred to the tip lens 91 and the wafer holder H1 (or H2), that is, the auxiliary plate described above, as described above. Is held between. Further, when water can be held between the wafer and the tip lens 91 during stepping, the supply and recovery of water may be stopped.
In addition to the nozzle for supplying and collecting water from the X-axis direction or the Y-axis direction, for example, a nozzle for supplying and collecting water from an oblique direction may be provided. Further, regardless of the moving direction of the wafer, the liquid Lq is continuously supplied from the supply nozzles 21a to 21c, 22a to 22c, 27a, 28a, and the liquid Lq is continuously supplied from the recovery nozzles 23a, 23b, 24a, 24b, 29a, 29b, 30a, 30b. You may continue to collect the liquid Lq. Further, the liquid supply / discharge system is not limited to the form shown in FIG. 4 described above, and various forms can be applied as long as an immersion region can be formed on the image plane side of the projection optical system PL.
In the exposure apparatus 100 of the present embodiment, the holding member (not shown in FIG. 1) and the light receiving system 90b (not shown in FIG. 1, see FIG. 5) for further holding the projection unit PU are shown in FIG. A multipoint focal position detection system of an oblique incident method similar to that disclosed in, for example, Japanese Patent Application Laid-Open No. 6-283403 and the corresponding US Pat. No. 5,448,332 (see 5) is provided. The irradiation system 90a has a light source whose on / off control is controlled by the main control device 20 of FIG. 5, and emits a luminous flux for forming an image of a large number of pinholes or slits toward the image plane of the projection optical system PL. To do. The emitted luminous flux is irradiated to the wafer surface from an oblique direction with respect to the optical axis AX via a prism (a part of the optical system in the irradiation system 90a) (not shown) provided in the lens barrel of the projection unit PU. To. On the other hand, the reflected luminous flux of those light fluxes reflected on the wafer surface is reflected by another prism (a part of the optical system in the light receiving system 90b) provided in the lens barrel of the projection unit PU, and is reflected by the light receiving system. It is received by the light receiving element in 90b.
The defocus signal (defocus signal), which is the output of the light receiving system 90b of the focus position detection system (90a, 90b), is supplied to the main control device 20. The main control device 20 calculates the Z position and θx, θy rotation of the wafer surface based on the defocus signal (defocus signal) from the light receiving system 90b, for example, the S curve signal during scanning exposure, which will be described later. Z of wafer stages WST1 and WST2 via the wafer stage drive unit 124 so that the difference between the Z position and θx, θy rotation of the wafer surface is zero with respect to their target values, that is, the focus shift is zero. By controlling the movement in the axial direction and the inclination in the two-dimensional direction (that is, the rotation in the θx and θy directions), the projection optical system PL is within the irradiation region of the illumination light IL (the region conjugate with the illumination region described above). Autofocus and autoleveling are performed to substantially match the image plane of the wafer with the surface of the wafer. To the extent permitted by the national legislation of the designated country (or selected country of choice) designated in this international application, the description in this specification is made by referring to the disclosure in JP-A-6-283403 and the corresponding US patent. It is a department. The focal position detection system may detect the position information of the wafer surface via a liquid, or may detect the position information without using a liquid. The focal position detection system is not limited to the one that detects the position information of the wafer surface on the image plane side of the projection optical system PL, but also detects the position information of the wafer surface at a place away from the projection optical system PL. Is also good.
FIG. 5 shows the main configuration of the control system of the exposure apparatus 100 of the present embodiment. This control system is mainly composed of a main control device 20 composed of a microcomputer (or workstation) that controls the entire device in an integrated manner.
Next, the operation of each part during exposure in the exposure apparatus 100 of the present embodiment will be described. Here, as shown in FIG. 2, a case where exposure is performed on the wafer stage WST1 side will be described.
At the start of this exposure operation, the main controller 20 monitors the measured values of the interferometers 18 and 46 based on the results of wafer alignment such as enhanced global alignment (EGA) performed in advance. , X-axis linear motors 84,85 and Y-axis linear motor 81 are controlled to move the wafer stage WST1 to the scanning start position (acceleration start position) for exposure of the first shot region of the wafer W1. In this exposure sequence, the position of the wafer stage WST1 is managed on the first exposure coordinate system.
Next, the main controller 20 starts relative scanning of the reticle R (reticle stage RST) and the wafer W1 (wafer stage WST1) in the Y-axis direction. During this relative scanning, the main controller 20 monitors the measured values of the above-mentioned interferometers 18, 46 and reticle interferometer 116, and monitors the reticle stage drive unit 11 and the Y-axis linear motor 81 (and the X-axis linear motor 84,). 85) to control.
Then, when both stages RST and WST1 are accelerated to their respective target scanning speeds, the main control device 20 gives an instruction to a light source (ArF excimer laser device) (not shown) to start pulse light emission. Then, when both stages RST and WST1 reach a constant velocity synchronized state, the pattern region of the reticle R begins to be illuminated by the illumination light IL (ultraviolet pulse light) from the illumination system 10, and scanning exposure is started. Prior to the start of this scanning exposure, as described above, the pulsed light emission of the light source is started, but the main control device 20 causes the predetermined blade of the movable reticle blind (not shown) in the lighting system 10 to be the reticle stage RST. It is moved synchronously, which prevents unnecessary exposure to the wafer W1 before the start of scanning exposure.
Then, different regions of the pattern region of the reticle R are sequentially illuminated by the illumination light IL, and the illumination of the entire pattern region is completed, so that the scanning exposure of the first shot region on the wafer W1 is completed. As a result, the pattern of the reticle R is reduced and transferred to the first shot region on the wafer W1 via the projection optical system PL.
In this case, even after the scanning exposure is completed, the movable reticle blind (not shown) in the lighting system 10 is moved in synchronization with the reticle stage RST by the main control device 20, which causes unnecessary exposure of the wafer W1. It is prevented.
As described above, when the scanning exposure of the first shot region is completed, the main controller 20 steps the wafer stage WST1 in the X and Y axis directions via the X-axis linear motors 84 and 85 and the Y-axis linear motor 81. It is moved to the acceleration start position (scanning start position) for exposure of the second shot area. During this inter-shot stepping, the main controller 20 measures the positional displacement of the wafer stage WST1 in the X, Y, and θz directions in real time based on the measured values of the interferometers 18 and 46. Then, based on this measurement result, the main control device 20 controls the position of the wafer stage WST1 so that the XY position displacement of the wafer stage WST1 becomes a predetermined state. Further, in the main controller 20, at least one of the reticle stage RST (reticle fine movement stage) and the wafer stage WST1 so as to compensate for the error of the rotational displacement on the wafer side based on the information of the displacement of the wafer stage WST1 in the θz direction. Control rotation.
Then, when the stepping between shots is completed, the operation of each part is controlled by the main control device 20 in the same manner as described above, and the second shot region on the wafer W1 is subjected to the same scanning exposure as described above.
In this way, the scanning exposure of the shot region on the wafer W1 and the stepping operation between shots for the next shot exposure are repeatedly performed, and the pattern of the reticle R is sequentially transferred to all the shot regions to be exposed on the wafer W1. To.
During the step-and-scan exposure operation on the wafer W1 described above, the liquid supply device 5 and the liquid recovery device 6 of the liquid supply / discharge system 32 are operated by the main control device 20 according to the change in the moving direction of the wafer W1. It goes without saying that the opening / closing control of each valve is performed as described above. Therefore, during the step-and-scan exposure operation on the wafer W1 described above, a state in which a constant amount of water is always stably held between the tip lens 91 and the wafer W1 is maintained.
Next, the parallel processing operation using the two wafer stages WST1 and WST2 will be described with reference to FIGS. 2 and 6 to 9. During the following operation, the main control device 20 causes the liquid supply device 5 and the liquid recovery device 6 of the liquid supply / discharge system 32 to move according to the moving direction of the wafer stage located in the first region directly under the projection unit PU. The opening / closing control of each bulb is performed as described above, and water is always filled directly under the tip lens 91 of the projection optical system PL. However, in the following, for the sake of clarity, the description regarding the control of the liquid supply device 5 and the liquid recovery device 6 will be omitted.
In FIG. 2, the wafer W1 on the wafer stage WST1 is exposed by the step-and-scan method as described above, and in parallel with this, on the wafer stage WST2 side, the lower portion of the alignment system ALG2 is exposed. A state in which wafer alignment with respect to wafer W2 is performed in three regions is shown.
As described above, while the wafer W1 is exposed by the step-and-scan method, the following operations are performed on the wafer stage WST2 side.
That is, prior to the above wafer alignment, wafer exchange is performed between the wafer transfer mechanism (not shown) and the wafer stage WST2 at the left loading position. Here, the left loading position is defined as the position where the reference mark plate FM2 is located directly under the alignment system ALG2. In this case, at the left loading position, the Y-axis interferometer 44 is reset by the main controller 20 before the alignment system ALG2 detects the second reference mark on the reference mark plate FM2.
When detecting the second reference mark, the main control device 20 captures an image of the second reference mark using the alignment system ALG2, performs a predetermined process on the image signal, and analyzes the signal after the process. By doing so, the position of the second reference mark with reference to the index center of the alignment system ALG2 is detected. Further, in the main control device 20, the position coordinates of the second reference mark on the second alignment coordinate system are based on the detection result of the position of the second reference mark and the measurement results of the interferometers 16,44 at the time of the detection. Is calculated.
Next, the main controller 20 manages the position of the wafer stage WST2 in the XY plane on the above-mentioned second alignment coordinate system, and uses the alignment system ALG2 to manage a plurality of specific shot regions (sample shots) on the wafer W2. By detecting the position information (position information with respect to the detection center of the alignment system ALG2) of the alignment mark (sample mark) attached to the region), the position information of the sample mark on the second alignment coordinate system is obtained. Next, the main controller 20 is disclosed in, for example, Japanese Patent Application Laid-Open No. 61-22249 and the corresponding US Pat. No. 4,780,617 based on the detection result and the design position coordinates of the specific shot region. The statistical calculation as described above is performed to calculate the position coordinates of the plurality of shot regions on the wafer W2 on the second alignment coordinate system. That is, EGA (Enhanced Global Alignment) is performed in this way. Then, in the main control device 20, the position coordinates of the plurality of shot areas are obtained by subtracting the position coordinates of the second reference mark described above from the position coordinates on the second alignment coordinate system of the plurality of shot areas on the wafer W2. Converts the position of the second reference mark to the position coordinates with the origin as the origin. To the extent permitted by the national legislation of the designated country (or selected country of choice) designated in this international application, the disclosure in the above gazette and the corresponding US patent shall be incorporated as part of the description of this specification.
Of the exposure sequence and the wafer exchange / alignment sequence performed in parallel on the two wafer stages WST1 and WST2 described above, the wafer exchange / alignment sequence usually ends first. Therefore, the wafer stage WST2 whose alignment has been completed is in a waiting state at a predetermined standby position.
Then, on the wafer stage WST1 side, when the exposure to the wafer W1 is completed, the main control device 20 starts moving the wafer stages WST1 and WST2 toward the predetermined positions shown in FIG. 6, respectively.
Then, after moving the wafer stages WST1 and WST2 to the positions shown in FIG. 6, the main control device 20 starts the operation of simultaneously driving the wafer stage WST1 and the wafer stage WST2 in the + X direction. In the state of FIG. 6, the wafer stage WST1 and the wafer stage WST2 are in contact with each other via the elastic sealing member 93 provided on the wafer stage WST1.
When the wafer stages WST1 and WST2 are simultaneously driven by the main controller 20 in this way, in the state of FIG. 6, the water held between the tip lens 91 of the projection unit PU and the wafer W1 is removed. As the wafer stages WST1 and WST2 move to the + X side, they move sequentially on the wafer W1 wafer stage WST1 (more specifically, wafer holder H1) wafer stage WST2 (more specifically, wafer holder H2). During the above movement, the wafer stages WST1 and WST2 maintain a positional relationship in which they come into contact with each other via the elastic sealing member 93 as in the state of FIG. FIG. 7 shows a state in which water (immersion region) is simultaneously present on the wafer stages WST1 and WST2 (wafer holders H1 and H2) during the above movement, that is, water from the wafer stage WST1 to the wafer stage WST2. The state just before being passed is shown.
When the wafer stages WST1 and WST2 are driven at the same time in the + X direction by a predetermined distance from the state shown in FIG. 7, as shown in FIG. 8, the area including the reference mark plate FM2 on the wafer stage WST2 and the tip lens 91 Water is retained between the two. Prior to this, the main controller 20 resets the Y-axis interferometer 46 at any time when the interferometer beam from the Y-axis interferometer 46 is applied to the moving mirror 117Y. ..
Next, the main controller 20 starts driving the wafer stage WST1 toward the right loading position shown in FIG. This right loading position is defined at the position where the reference mark plate FM1 is located directly under the alignment system ALG1.
In parallel with the start of movement of the wafer stage WST1 toward the right loading position, in the main controller 20, the reference mark plate FM2 is used by the pair of reticle alignment systems RAa and RAb (see Fig. 1) using the illumination light IL. The relative position of the above pair of first reference marks and the corresponding reticle alignment marks on the reticle R on the wafer surface is detected. At this time, the detection of the image of the pair of the first reference mark and the reticle alignment mark on the reference mark plate FM2 is performed via the projection optical system PL and water.
Then, in the main control device 20, the detected relative position information, the position information of each shot region on the wafer W2 with respect to the previously obtained second reference mark, and the known first reference mark and second reference mark are used. Based on the positional relationship of, the relative positional relationship between the projection position of the reticle R pattern (projection center of the projection optical system PL) and each shot region on the wafer W2 is calculated. Then, based on the calculation result, the main control device 20 manages the position of the wafer stage WST2 on the second exposure coordinate system as in the case of the wafer W1 described above, and uses a step-and-scan method to manage the wafer. Transfer the reticle R pattern to each shot area on W2.
In parallel with the above operation on the wafer stage WST2 side, on the wafer stage WST1 side, wafer exchange is performed with a wafer transfer system (not shown) at the right loading position, and the wafer is mainly exchanged at the same time as or immediately after the wafer exchange. The control device 20 detects the second reference mark on the reference mark plate FM1 using the alignment system ALG1. The main controller 20 resets the Y-axis interferometer 48 prior to detecting the second reference mark. After that, the main control device 20 performs EGA on the wafer W2 using the alignment system ALG1 while managing the position of the wafer stage WST1 on the first alignment coordinate system.
After that, the main control device 20 repeatedly performs the parallel operation with the wafer stages WST1 and WST2 described above.
In the parallel processing using the wafer stage WST1 and the wafer stage WST2 described above, one of the wafers is between the end of the exposure to the wafer on one wafer stage and the start of the exposure to the wafer on the other wafer stage. From the state where the wafer stage is directly under the projection unit PU (that is, the state where water is on one wafer stage), the state where the other wafer stage is directly under the projection unit PU (that is, the state where water is on the other stage). At this time, the wafer stages WST1 and WST2 are maintained in contact with each other via the elastic sealing member 93 in the X-axis direction (the state shown in FIG. 10). Will be done. Therefore, as shown in FIG. 7, even if water (immersion region) straddles between the wafer stages WST1 and WST2, the wafer stages WST1 and WST2 are placed below the stage through the gap between the wafer stages WST1 and WST2. The leakage of water (liquid) is reliably prevented by the elastic sealing member 93.
During the movement of the wafer stage WST1 and the wafer stage WST2, there is a state (movement period, movement section) in which the interferometer beam from any of the Y-axis interferometers 46 and 48 does not hit the moving mirror 17Y of the wafer stage WST1. In addition, there is a state (movement period, movement section) in which the interferometer beam from any of the Y-axis interferometers 46 and 44 does not hit the moving mirror 117Y of the wafer stage WST2. The positions of both wafer stages WST1 and WST2 in this case are controlled by a linear encoder (not shown). When the position of the wafer stage is controlled by the linear encoder, the Y-axis interferometer is mainly reset when the interferometer beam from one of the Y-axis interferometers hits the moving mirror 17Y or 117Y. It is executed by the control device 20.
As is clear from the above description, in the present embodiment, the wafer stage drive unit 124 constitutes at least a part of the stage drive system. Further, at least a part of the stage apparatus is composed of the stage drive system and the wafer stages WST1 and WST2.
As described in detail above, according to the exposure apparatus 100 of the present embodiment, the stage apparatus included in the exposure apparatus, and the driving methods of the wafer stages WST1 and WST2 executed by the exposure apparatus 100, the liquid (water) is supplied. One wafer stage WST1 (or WST2) is located in the first region including the position directly under the projection unit PU (projection optical system PL). From the first state, the other wafer stage WST2 (or WST1) is in the first region. When transitioning to the second state located in, the wafer stage WST1 and WST2 are maintained in contact with each other via the elastic sealing member 93 in the X-axis direction by the stage drive system (124, etc.), and the wafer stage WST1 is maintained. , WST2 are driven simultaneously in the X-axis direction.
Therefore, water is supplied between the projection optical system PL (projection unit PU) and a specific wafer stage immediately below it (this stage switches from one wafer stage to the other wafer stage as it moves). In the same state, one wafer stage WST1 (or WST2) is located in the first region, and the other wafer stage WST2 (or WST1) is in the first state without leaking water from the gap between the two wafer stages. It is possible to transition to the second state located in one area. That is, after the wafer exposure operation via the projection optical system PL and water (liquid) is performed on one wafer stage side, the wafer exposure via the projection optical system PL and water is performed on the other wafer stage side. From the state where the wafer is held between one wafer stage and the projection optical system PL until the start of operation, the state where water is held between the other wafer stage and the projection optical system PL, It is possible to make a transition without going through the steps of total recovery of water and resupply.
Therefore, the time from the end of the exposure operation on one wafer stage side to the start of the exposure operation on the other wafer stage side is shortened (that is, the same as a normal exposure device (non-immersion exposure device) that is not immersion exposure). It is possible to improve the throughput by maintaining the degree). Further, since water is always present on the image plane side of the projection optical system PL, the optical member on the image plane side of the projection optical system PL (for example, the tip lens 91 and the prism of the multipoint focal position detection system described above) , Water stains (water marks) can be effectively prevented, and the imaging performance of the projection optical system PL and the detection accuracy of the multipoint focal position detection system should be maintained well for a long period of time. Can be done.
In addition, by using the parallel processing operations of the two wafer stages WST1 and WST2 described above, an exposure device equipped with a conventional single wafer stage that sequentially performs wafer exchange, wafer alignment, and exposure operation using one wafer stage can be used. Compared with this, it is possible to improve the throughput.
In addition, by performing immersion exposure with high resolution and a large depth of focus compared to in the air, the pattern of the reticle R can be accurately transferred onto the wafer. For example, as a device rule, about 70 to 100 nm. Transfer of fine patterns can be realized.
Further, in the present embodiment, since the wafer stage WST1 and the wafer stage WST2 come into contact with each other via the elastic sealing member 93, water leakage from the gap between the two wafer stages is suppressed, and the elastic sealing member 93 Due to the buffering action, the impact when the wafer stage WST1 and the wafer stage WST2 come into contact with each other can be reduced.
Further, in the present embodiment, since the moving mirrors for the interferometers are not provided on the -X side surface of the wafer stage WST1 and the + X side surface of the wafer stage WST2, both wafer stages are in a state of being close to each other in the X-axis direction. However, since the reflecting surfaces of the moving mirrors on both wafer stages do not face each other in close proximity, the position of both wafer stages is determined by the interferometer system 118 during the simultaneous drive of both wafer stages in the X-axis direction. Not only can it be monitored by the above, but it is also possible to prevent water from adhering to the reflecting surface of the moving mirror.
<< Second Embodiment >> Next, a second embodiment of the present invention will be described with reference to FIGS. 11 to 15 (B). Here, the same reference numerals are used for the same or equivalent parts as those in the first embodiment described above, and the description thereof will be simplified or omitted. In the exposure apparatus of the second embodiment, the configuration of the wafer stage apparatus and the parallel processing operation using the two wafer stages are different from those of the first embodiment described above. Further, it differs from the above-described first embodiment in that only one mark detection system is provided. The configuration of other parts is the same as that of the first embodiment described above. Therefore, the differences will be mainly described below from the viewpoint of avoiding duplicate explanations.
FIG. 11 shows the configuration of the control system of the exposure apparatus according to the second embodiment. Comparing FIG. 11 and FIG. 5, the point that the wafer stage drive unit 124A is provided in place of the wafer stage drive unit 124 of the first embodiment described above in the second embodiment is described above. It can be seen that it is different from the first embodiment of.
In the second embodiment, the wafer stage device 50'shown in FIG. 12 is provided in place of the wafer stage device 50 described above. As shown in FIG. 12, the wafer stage apparatus 50'has a base plate 12 and a wafer stage WST1'and a wafer stage WST2'arranged above the upper surface of the base plate 12 (on the front side of the paper surface in FIG. 12). And 6 interferometers 151X as position measuring devices to measure the positions of these wafer stages WST1'and WST2'<sub>1</sub>, 151X<sub>2</sub>, 151X<sub>3</sub>, 151X<sub>4</sub>, 151Y<sub>1</sub>, 151Y<sub>2</sub>The first drive unit 171, the second drive unit 172, and the first connection mechanism 195 and the second connection mechanism, which are substantially H-shaped (when viewed from above) to drive the wafer stages WST1'and WST2' individually. 196 (not shown in FIG. 12, see FIG. 11).
Here, the above six interferometers 151X<sub>1</sub>, 151X<sub>2</sub>, 151X<sub>3</sub>, 151X<sub>4</sub>, 151Y<sub>1</sub>, 151Y<sub>2</sub>The interferometer system 118A of FIG. 11 is configured with the wafer stage drive unit 124A of FIG. 11 including the first drive unit 171, the second drive unit 172, the first connection mechanism 195 and the second connection mechanism 196. ing.
The first drive unit 171 uses an X-axis linear motor 136X as a linear actuator for driving the wafer stage WST1'(or WST2') in the X-axis direction, and an X-axis linear motor 136X for the wafer stage WST1'(or WST2'). A pair of Y-axis linear motors 136Y that are integrally driven in the Y-axis direction, which is the scanning direction.<sub>1</sub>, 136Y<sub>2</sub>And have.
The X-axis linear motor 136X includes an X-axis linear guide 181 as a stator whose longitudinal direction is the X-axis direction, and an X mover 179 that moves in the X-axis direction along the X-axis linear guide 181. There is.
The X-axis linear guide 181 includes an armature unit having a housing extending in the X-axis direction and a plurality of armature coils arranged inside the housing along the X-axis direction at predetermined intervals. One Y-axis linear motor 136Y is located at one end of the X-axis linear guide 181 in the longitudinal direction (X-axis direction).<sub>1</sub>Movable (Y mover) 184 is fixed, and the other Y-axis linear motor 136Y is attached to the other end.<sub>2</sub>Movable (Y mover) 185 is fixed.
The X mover 179 has, for example, a tubular shape that surrounds the X-axis linear guide 181 from all sides, and a YZ cross-section inverted U-shaped mover yoke is provided inside the X mover 179. In this mover yoke, a plurality of N-pole permanent magnets and a plurality of S-pole permanent magnets are alternately arranged along the longitudinal direction thereof. Therefore, an alternating magnetic field is formed in the internal space of the X mover 179 along the X-axis direction.
In this case, the electromagnetic interaction between the X mover 179 and the X-axis linear guide 181 generates a driving force (Lorentz force) that drives the X mover 179 in the X-axis direction. That is, the X-axis linear motor 136X is a moving magnet type electromagnetic force drive type linear motor.
A first connection mechanism 195 (not shown in FIG. 12, see FIG. 11) for connecting the wafer stage WST1'(or WST2') is provided on the -Y side surface of the X mover 179. As the first connection mechanism 195, for example, a mechanism that utilizes the magnetic attraction force of an electromagnet, a mechanism that mechanically engages the wafer stage WST1'(or WST2'), or the like can be used. The main control device 20 controls the first connection mechanism 195 to connect the wafer stage WST1'(or WST2') to the X mover 179, or disconnect the wafer stage WST1'(or WST2'). In the connected state, the wafer stage WST1'(or WST2') is cantilevered and supported by the X mover 179. FIG. 12 shows a state in which the X mover 179 cantilevered and supports the wafer stage WST1'.
One Y-axis linear motor 136Y<sub>1</sub>Includes a Y-axis linear guide 188 as a stator extending in the Y-axis direction and a Y mover 184 that moves along the Y-axis linear guide 188. As the Y-axis linear guide 188, an armature unit configured in the same manner as the X-axis linear guide 181 described above is used. Further, as the Y mover 184, although the XZ cross section is inverted U-shaped, a magnetic pole unit having the same structure as the above-mentioned X mover 179 is used. That is, the Y-axis linear motor 136Y<sub>1</sub>Is a moving magnet type electromagnetic force drive type linear motor.
The other Y-axis linear motor 136Y<sub>2</sub>Includes a Y-axis linear guide 189 as a stator extending in the Y-axis direction and a Y mover 185 that moves along the Y-axis linear guide 189. This Y-axis linear motor 136Y<sub>2</sub>Is a Y-axis linear motor 136Y<sub>1</sub>It is a moving magnet type electromagnetic force drive type linear motor configured in the same manner as above.
Further, as described above, since both ends of the X-axis linear guide 181 are fixed to the Y movers 184 and 185, respectively, the Y-axis linear motor 136Y<sub>1</sub>, 136Y<sub>2</sub>When the driving force is generated in the Y-axis direction, the wafer stage WST1'(or WST2') is driven in the Y-axis direction together with the X-axis linear motor 136X. In this case, Y-axis linear motor 36Y<sub>1</sub>, 36Y<sub>2</sub>By making the driving force generated by the wafer stage different, it is possible to control the rotation of the wafer stage WST1'(or WST2') around the Z-axis via the X-axis linear motor 36X.
The second drive unit 172 is arranged substantially vertically symmetrically on the -Y side of the first drive unit 171 described above in the paper surface of FIG. The second drive unit 172 is configured in the same manner as the first drive unit 171. That is, the second drive unit 172 includes an X-axis linear motor 138X as a linear actuator composed of an X-axis linear guide 180 and an X mover 178, and a Y mover 182 provided at one end of the X-axis linear guide 180. And Y-axis linear motor 138Y consisting of Y-axis linear guide 186<sub>1</sub>And the Y-axis linear motor 138Y composed of the Y mover 183 and the Y-axis linear guide 187 provided at the other end of the X-axis linear guide 180.<sub>2</sub>And have.
On the + Y side surface of the X mover 178, a second connection mechanism 196 (in FIG. 12) similar to the first connection mechanism described above for connecting the wafer stage WST2'(or WST1') is connected to the X mover 179. Not shown, see FIG. 11). The main control device 20 controls the second connection mechanism 196 to connect the wafer stage WST2'(or WST1') to the X mover 178, or disconnect the wafer stage WST2'(or WST1'). FIG. 12 shows a state in which the wafer stage WST2'is connected to the X mover 178 and cantilevered.
The wafer stage WST1'has a stage body that is not provided with a magnetic pole unit portion unlike the stage body that constitutes the wafer stage WST1 of the first embodiment described above, and a Z / tilt (not shown) on the upper surface of the stage body. It is composed of a wafer table similar to the wafer table constituting the above-mentioned wafer stage WST1 provided via a drive mechanism. On the upper surface of this wafer table, there is a + Y moving mirror 47Y near the ± Y side end and the + X side end.<sub>1</sub>, -Y Moving mirror 47Y<sub>2</sub>, + X Moving mirror 47X is provided.
The wafer stage WST2'is configured in the same manner as the wafer stage WST1'. On the upper surface of the wafer table that constitutes this wafer stage WST2', there is a + Y moving mirror 49Y near the ± Y side end and the -X side end.<sub>1</sub>, -Y Moving mirror 49Y<sub>2</sub>, -X Moving mirror 49X is provided.
Also in the second embodiment, the side surface where the moving mirror of the wafer stage WST1'is not arranged in the vicinity (-X side surface) and the side surface where the moving mirror of the wafer stage WST2' is not arranged in the vicinity (+). An elastic seal member similar to the elastic seal member 93 shown in FIG. 10 is provided on at least one of the X side surface).
Further, as shown in FIG. 12, an alignment system ALG as a mark detection system is provided on the -Y side of the projection optical system PL at a predetermined distance.
As shown in FIG. 12, the interferometer system 118A has two Y-axis having a length-measuring axis parallel to the Y-axis connecting the projection center (optical axis) of the projection optical system PL and the detection center of the alignment system ALG. Interferometer 151Y<sub>1</sub>, 151Y<sub>2</sub>And the interferometer 151Y at the projection center (optical axis) of the projection optical system PL<sub>1</sub>Two X-axis interferometers 151X each with a length-measuring axis parallel to the X-axis that intersects the length-measuring axis of<sub>1</sub>, 151X<sub>2</sub>And the interferometer 151Y at the detection center of the alignment system ALG<sub>2</sub>Two X-axis interferometers 151X each with a length-measuring axis parallel to the X-axis that intersects the length-measuring axis of<sub>3</sub>, 151X<sub>4</sub>And have.
4 X-axis interferometer 151X<sub>1</sub>~ 151X<sub>4</sub>Is a multi-axis interferometer having at least three optical axes separated in the Y-axis direction and the Z-axis direction, and the output value of each optical axis can be measured independently. Therefore, these X-axis interferometers 151X<sub>1</sub>~ 151X<sub>4</sub>In addition to measuring the position of the wafer stage WST1'or WST2' in the X-axis direction, it is possible to measure the amount of rotation around the Y-axis (rolling amount) and the amount of rotation around the Z-axis (yawing amount).
The above two Y-axis interferometers 151Y<sub>1</sub>, 151Y<sub>2</sub>Is, for example, a two-axis interferometer having two optical axes separated from each other in the Z-axis direction, and the output value of each optical axis can be measured independently. Therefore, these Y-axis interferometers 151Y<sub>1</sub>, 151Y<sub>2</sub>In addition to measuring the position of the wafer stage WST1'or WST2' in the Y-axis direction, it is possible to measure the amount of rotation (pitching amount) around the X-axis.
In this case, the wafer stage WST1'is in the region (first region) near the position directly below the optical axis of the projection optical system PL, and the wafer (wafer W1 in FIG. 12) on the wafer stage WST1'is exposed. X-axis interferometer 151X<sub>1</sub>, Y-axis interferometer 151Y<sub>1</sub>The position of the wafer stage WST1'in the XY plane is managed on the first exposure coordinate system defined by each length measurement axis.
Further, the wafer stage WST2'is in a region (first region) near the position directly below the optical axis of the projection optical system PL, and the wafer on the wafer stage WST2' (wafer W2 in FIG. 12) is exposed. In some cases, such as the X-axis interferometer 151X<sub>2</sub>, Y-axis interferometer 151Y<sub>1</sub>The position of the wafer stage WST2'in the XY plane is managed on the second exposure coordinate system defined by each length measurement axis.
In addition, when the wafer stage WST1'is in a region (second region) near the position directly below the alignment system ALG, and alignment (EGA) is performed with respect to the wafer (wafer W1 in FIG. 12) on the wafer stage WST1'. X-axis interferometer 151X<sub>3</sub>, Y-axis interferometer 151Y<sub>2</sub>The position of the wafer stage WST1'in the XY plane is managed on the first alignment coordinate system defined by each length measurement axis.
Furthermore, when the wafer stage WST2'is in a region (second region) near the position directly below the alignment system ALG, and alignment (EGA) is performed with respect to the wafer (wafer W2 in FIG. 12) on the wafer stage WST2'. X-axis interferometer 151X<sub>4</sub>, Y-axis interferometer 151Y<sub>2</sub>The position of the wafer stage WST2'in the XY plane is managed on the second alignment coordinate system defined by each length measurement axis.
Other components, including the liquid supply / discharge system 32, are configured in the same manner as in the first embodiment described above.
Next, a series of operations including a parallel processing operation of an exposure operation on a wafer on one wafer stage and an alignment operation on a wafer on the other wafer stage, which is performed by the exposure apparatus of the second embodiment. Will be described with reference to FIGS. 12 to 15 (B). During the following operation, the liquid supply device 5 and the liquid recovery device 6 of the liquid supply / discharge system 32 are operated by the main control device 20 according to the moving direction of the wafer stage located in the first region directly under the projection optical system PL. The opening and closing control of each bulb is performed as described above, and water is always filled directly under the tip lens 91 of the projection optical system PL. However, in the following, for the sake of clarity, the description regarding the control of the liquid supply device 5 and the liquid recovery device 6 will be omitted.
During the movement of the wafer stage WST1'or WST2', the interferometer beam from the X-axis interferometer or Y-axis interferometer does not hit the moving mirror, making it difficult to manage the position of the wafer stage by the interferometer. Exists. The position of the wafer stage in such a case is controlled by a linear encoder (not shown), and when the position of the wafer stage is controlled by the linear encoder in this way, the interferometer beam from the desired interferometer hits the moving mirror. When this happens, the interferometer is reset by the main controller 20. However, in the following, in order to prevent the description from becoming complicated, the description regarding the position measurement of the wafer stage by the linear encoder and the reset of the interferometer will be omitted.
In FIG. 12, the wafer W1 mounted on the wafer stage WST1'is exposed by a step-and-scan method in the same manner as in the first embodiment described above, and in parallel with this, the wafer stage is exposed. On the WST2'side, the state in which the wafer is aligned with the wafer W2 is shown in the second region below the alignment system ALG.
In the exposure operation for the wafer W1, the main control device 20 manages the position of the wafer stage WST1'on the first exposure coordinate system described above, and the above-mentioned X-axis linear motor 136X and a pair of Y-axis linears are used. Motor 136Y<sub>1</sub>, 136Y<sub>2</sub>It is performed while moving the wafer stage WST1'by driving and controlling.
While the wafer W1 is exposed to the wafer W1 by the step-and-scan method on the wafer stage WST1'side, the following operations are performed on the wafer stage WST2'side.
That is, prior to the above wafer alignment, wafer exchange is performed between the wafer transfer mechanism (not shown) and the wafer stage WST2'at a predetermined loading position.
After the wafer exchange, the main controller 20 manages the position of the wafer stage WST2'in the XY plane on the above-mentioned second alignment coordinate system, and uses the alignment system ALG to perform a plurality of specific sample shots on the wafer W2. The above-mentioned EGA including detection of the position information of the sample mark attached to the region is executed to calculate the position coordinates of the plurality of shot regions on the wafer W2 on the second alignment coordinate system. Note that FIG. 12 shows the state of the sample mark when the position information is detected. Further, the main control device 20 detects the position information of the second reference mark formed on the reference mark plate FM2 on the wafer stage WST2'before and after the detection of the position information of the sample mark. Then, the main control device 20 converts the position coordinates of the plurality of shot regions on the wafer W2 obtained earlier on the second alignment coordinate system into the position coordinates with the position of the second reference mark as the origin.
In addition, when the wafer stage WST2'is moved during the above wafer alignment, the main controller 20 uses the above-mentioned X-axis linear motor 138X and a pair of Y-axis linear motors 138Y.<sub>1</sub>, 138Y<sub>2</sub>It is done by driving and controlling.
In the wafer alignment operation for the wafer W2 on the wafer stage WST2'and the exposure operation for the wafer W1 on the wafer stage WST1' described above, the wafer alignment operation usually ends first. Therefore, after the wafer alignment is completed, the main controller 20 uses the X-axis linear motor 138X and the pair of Y-axis linear motors 138Y.<sub>1</sub>, 138Y<sub>2</sub>The wafer stage WST2'is moved to a predetermined standby position shown in FIG. 13 (A) and is made to stand by at that position.
After that, when the exposure operation for the wafer W1 on the wafer stage WST1'is completed, the main controller 20 uses the X-axis linear motor 136X and the pair of Y-axis linear motors 136Y.<sub>1</sub>, 136Y<sub>2</sub>The wafer stage WST1'is moved to the position shown in FIG. 13 (A) via. It is desirable that the exposure end position with respect to the wafer W1 is set in the vicinity of the position shown in FIG. 13 (A).
After moving the wafer stage WST1'to the position shown in FIG. 13 (A), the main controller 20 sets the X-axis linear motor 138X and the pair of Y-axis linear motors 138Y.<sub>1</sub>, 138Y<sub>2</sub>The wafer stage WST2'is moved to the position shown in FIG. 13 (B) via. In the state where the wafer stage WST2'is moved to the position shown in FIG. 13B, the wafer stage WST1'and the wafer stage WST2' are in contact with each other via the elastic sealing member as in the first embodiment described above. It has become.
Next, the main controller 20 includes an X-axis linear motor 136X and a pair of Y-axis linear motors 136Y.<sub>1</sub>, 136Y<sub>2</sub>, And the X-axis linear motor 138X and the pair of Y-axis linear motors 138Y<sub>1</sub>, 138Y<sub>2</sub>To move the wafer stage WST1'and the wafer stage WST2' at the same time in the + X direction. In FIG. 14 (A), both wafer stages WST1'and WST2'move simultaneously in the + X direction from the state of FIG. 13 (B) in this way, and the area including the reference mark plate FM2 on the wafer stage WST2' A state in which water is retained between the wafer and the tip lens 91 is shown.
In the state of FIG. 13B, the water held between the tip lens 91 of the projection unit PU and the wafer W1 moves to the + X side of the wafer stages WST1'and WST2', and the wafer W1 Wafer stage WST1' Wafer stage WST2'Move in sequence. During the above movement, the wafer stages WST1'and WST2' maintain a positional relationship in which they come into contact with each other via the elastic sealing member 93.
Next, the main controller 20 is in a connection state between the X mover 179 and the wafer stage WST1'by the first connection mechanism 195 described above, and a connection state between the X mover 178 and the wafer stage WST2' by the second connection mechanism 196. After releasing both, the X mover 179 is slightly driven in the + Y direction and the X mover 178 is slightly driven in the -Y direction. FIG. 14B shows the driven states of the X movers 179 and 178.
In the state of FIG. 14B, the wafer stages WST1'and WST2' are floated and supported on the base board 12 by air pads (not shown) provided on the bottom surface (-Z side surface) of the wafer stages WST1'and WST2'. It has become. However, not limited to this, a support leg that can freely appear and disappear is provided on the wafer stage WST1', WST2'side or the base board 12 side, and immediately before the connection between the wafer stage WST1', WST2'and the X mover 179,178 is released. The wafer stages WST1'and WST2' may be stably supported above the base board 12 by the support legs.
Next, the main controller 20 is a Y-axis linear motor 136Y.<sub>1</sub>, 136Y<sub>2</sub>, The X mover 179 is driven via the X-axis linear motor 136X and moved to a position where it can be connected to the wafer stage WST2', and the Y-axis linear motor 138Y<sub>1</sub>, 138Y<sub>2</sub>, The X mover 178 is driven via the X-axis linear motor 138X and moved to a position where it can be connected to the wafer stage WST1'. At this time, the position of each X mover is managed by an encoder (not shown).
In FIG. 15 (A), as described above, the X mover 179 can be driven and moved to a position where it can be connected to the wafer stage WST2', and the X mover 178 can be driven and connected to the wafer stage WST1'. The state of moving to the correct position is shown. After that, the main controller 20 connects the wafer stage WST2'to the X mover 179 via the first connection mechanism 195 and the wafer stage WST1'to the X mover 178 via the second connection mechanism 196. .. The X movers 178 and 179 may be moved in the X direction and the wafer stages WST1 and WST2 may be attached and detached without moving in the Y-axis direction.
In this way, after connecting the wafer stage WST2'to the X mover 179 and the wafer stage WST1'to the X mover 178, the main controller 20 sets the wafer stage WST2 on the above-mentioned second exposure coordinate system. While controlling the position of', the pair of first reference marks on the reference mark plate FM2 and the pair of reticle alignment marks on the reticle R are measured using the above-mentioned reticle alignment systems RAa and RAb. Then, the wafer stage WST2'is moved to the acceleration start position for exposure of the first shot region on the wafer W2 based on the measurement result and the result of the wafer alignment performed earlier. After that, the main controller 20 manages the position of the wafer stage WST2'on the second exposure coordinate system, and the X-axis linear motor 136X and the pair of Y-axis linear motors 136Y.<sub>1</sub>, 136Y<sub>2</sub>The wafer stage WST2'is driven and controlled via the wafer W2, and a step-and-scan exposure operation on the wafer W2 is performed in the same manner as in the first embodiment described above.
On the other hand, the main controller 20 is a Y-axis linear motor 138Y.<sub>1</sub>, 138Y<sub>2</sub>, And the wafer stage WST1'is moved toward the loading position via the X-axis linear motor 138X. The position of the moving wafer stage WST1'is managed on the above-mentioned first alignment coordinate system. Then, at the loading position, the exposed wafer W1 on the wafer stage WST1'is replaced with the wafer to be exposed next, and then the main control device 20 performs a wafer alignment operation on the new wafer. The procedure is the same as described above.
Then, when the wafer alignment at the wafer stage WST1'is completed and the exposure operation at the wafer stage WST2' is completed, the wafer stage WST1'and the wafer stage WST2' follow the completely opposite path to the above-mentioned path, and again. It returns to the state shown in Fig. 12.
In this way, in the exposure apparatus of the second embodiment, while switching the wafer stages WST1'and WST2', the exposure operation for the wafer on one wafer stage and the exposure operation on the other wafer stage are performed. Wafer exchange and wafer alignment operation are performed in parallel processing.
As is clear from the above description, in the second embodiment, the stage drive system includes the wafer stage drive unit 124A and the main control device 20. Further, the stage apparatus is composed of the stage drive system and the wafer stages WST1'and WST2'. In addition, the first connection mechanism 195, the second connection mechanism 196, and the Y-axis linear motor 136Y<sub>1</sub>~ 136Y<sub>4</sub>, X-axis linear motors 136X, 138X and a main control device 20 for controlling them are included in the switching device.
As described in detail above, according to the exposure apparatus of the second embodiment, the stage apparatus included in the exposure apparatus, and the driving method of the wafer stages WST1'and WST2' executed by the exposure apparatus, the liquid is supplied. One wafer stage WST1'(or WST2') is located in the first region directly under the projected optical system PL, and the other wafer stage WST2'(or WST1') is located in the first region. When transitioning to the state of 2, the wafer stages WST1'and WST2' are aligned in the X-axis direction (the first region and the second region near the position directly under the alignment system ALG are lined up by the stage drive system (20, 124A). Wafer stages WST1'and WST2' are simultaneously driven in the X-axis direction while maintaining a state of contact via the elastic sealing member 93 with respect to (directions intersecting in the axial direction).
Therefore, water (liquid) is supplied (liquid) between the projection optical system PL and a specific wafer stage immediately below it (this wafer stage switches from one wafer stage to the other wafer stage as it moves). While holding), one wafer stage WST1'(or WST2') is located in the first region from the first state to the other wafer stage WST2'(without leaking liquid from the gap between both wafer stages). Alternatively, WST1') can be transitioned to the second state located in the first region. That is, after the wafer exposure operation is performed via the projection optical system PL and water on one wafer stage side, the wafer is exposed via the projection optical system PL and water (liquid) on the other wafer stage side. From the state where water is held between one wafer stage and the projection optical system PL until the start of operation, the state where water is held between the other wafer stage and the projection optical system PL, It is possible to make a transition without going through the steps of total recovery of water and resupply. Therefore, the time from the end of the exposure operation on one wafer stage side to the start of the exposure operation on the other wafer stage side is shortened (that is, the same as a normal exposure device (non-immersion exposure device) that is not immersion exposure). It is possible to improve the throughput by maintaining the degree). Further, since water is always present on the image plane side of the projection optical system PL, the imaging performance and multipoint focus of the projection optical system PL over a long period of time for the same reason as in the first embodiment described above. The detection accuracy of the position detection system can be maintained well.
Further, by the parallel processing operation on the two wafer stages WST1'and WST2' described above, the exposure including the conventional single wafer stage in which the wafer exchange, the wafer alignment and the exposure operation are sequentially performed by using one wafer stage. It is possible to improve the throughput as compared with the device.
Further, also in the exposure apparatus of the second embodiment, the pattern of the reticle R can be accurately transferred onto the wafer by performing exposure with high resolution and a large depth of focus as compared with the air by immersion exposure. Can be done.
Further, also in the second embodiment, for the same reason as in the first embodiment described above, in addition to suppressing water leakage from the gap between the two wafer stages, the wafer stage WST1'and the wafer stage WST2' It is possible to reduce the impact at the time of contact with.
Further, also in the second embodiment, similarly to the first embodiment described above, the moving mirror for the interferometer is not provided on the -X side surface of the wafer stage WST1'and the + X side surface of the wafer stage WST2'. Therefore, even if both wafer stages are close to each other in the X-axis direction, the reflecting surfaces of the moving mirrors on both wafer stages do not come close to each other and face each other, so that the positions of both wafer stages are determined by the interferometer system. The 118A enables monitoring during the simultaneous drive of both wafer stages in the X-axis direction as described above. It is also possible to prevent water from adhering to the reflecting surface of the moving mirror.
In the second embodiment, three moving mirrors are arranged on the wafer stages WST1'and WST2', and six interferometers are arranged. However, the arrangement of the moving mirrors and the interferometer is the above-mentioned second embodiment. It is not limited to the arrangement of the second embodiment. For example, two moving mirrors may be arranged on both wafer stages, and an interferometer arrangement capable of measuring the positions of both wafer stages using these two moving mirrors may be adopted.
Further, in the second embodiment, after the water held under the tip lens 91 moves from one stage to the other stage, the water is changed by the X movers 178,179, but one of them is used. Before the water moves from one stage to the other stage, the X movers 178,179 may be used for switching.
<< Third Embodiment >> Next, the third embodiment of the present invention will be described with reference to FIGS. 16 to 18 (B). Here, the same reference numerals are used for the same or equivalent parts as those in the first embodiment described above, and the description thereof will be simplified or omitted. In the exposure apparatus of the third embodiment, the configuration of the wafer stage apparatus and the like are different from those of the first embodiment described above, and the configurations of other parts are the same. Therefore, the differences will be mainly described below from the viewpoint of avoiding duplicate explanations.
As shown in FIG. 16, the wafer stage apparatus 50 of the third embodiment is different from the wafer stage apparatus 50 constituting the exposure apparatus of the first embodiment described above, and the wafer stage WST on which a wafer can be mounted is mounted. And a measurement stage MST dedicated to measurement.
These wafer stage WST and measurement stage MST correspond to the wafer stage WST1 and the wafer stage WST2 in the first embodiment described above, and have a two-dimensional surface by the same wafer stage drive unit (80 to 87) as in the first embodiment. It is designed to be driven within.
Further, only one alignment system ALG is provided in the vicinity of the projection optical system PL (lens barrel of the projection unit PU). The projection unit PU and the alignment system ALG are actually in a nested state as shown in FIG. That is, at least the lower end portion of the alignment system ALG is located outside the portion formed to have a smaller diameter than the other portion near the lower end portion of the projection unit PU (the portion around the tip lens) and below the large diameter portion of the projection unit PU. Is located.
Various measurement members are provided on the upper surface of the measurement stage MST. The measuring member includes, for example, a reference mark plate on which a plurality of reference marks are formed and a projection optical system PL disclosed in JP-A-5-21314 and the corresponding US Pat. No. 5,243,195. It includes a sensor that receives the illumination light IL. As the sensor, for example, a predetermined area for receiving the illumination light IL on the image plane of the projection optical system PL disclosed in Japanese Patent Application Laid-Open No. 11-16816 and the corresponding US Patent Application Publication No. 2002/0061469. A pinhole shape that receives illumination light IL on the image plane of the projection optical system PL disclosed in Japanese Patent Application Laid-Open No. 57-117238 and the corresponding US Pat. No. 4,465,368. A spatial image of a pattern projected by the projection optical system PL disclosed in Japanese Patent Application Laid-Open No. 2002-14005 and the corresponding US Patent Application Publication No. 2002/0041377. A spatial image measuring instrument or the like that measures the light intensity of the projected image) can be adopted. To the extent permitted by the national legislation of the designated country (or selected country of choice) designated in this international application, the description of this specification is made with reference to each of the above publications and the corresponding publication of the US patent application or disclosure in the US patent. Part of it. The measurement members mounted on the measurement stage MST are not limited to those listed here, and various measurement members can be mounted as needed.
In this embodiment, it is used for measurement using the illumination light IL in response to the immersion exposure in which the wafer W is exposed by the exposure light (illuminance light) IL via the projection optical system PL and water. In the above-mentioned illuminance monitor, illuminance unevenness sensor, and spatial image measuring instrument, the illumination light IL is received through the projection optical system PL and water. Further, for each sensor, for example, only a part of the optical system or the like may be mounted on the measurement stage MST, or the entire sensor may be arranged on the measurement stage MST. Further, the wafer stage WST may or may not be equipped with a member for measurement.
Further, also in the third embodiment, as in the first embodiment described above, at least one of the -X side surface of the wafer stage WST and the MST + X side surface of the measurement stage is the same as the elastic sealing member 93 of FIG. Elastic seal member is provided.
Hereinafter, the parallel processing operation using the wafer stage WST and the measurement stage MST provided in the exposure apparatus of the third embodiment will be described with reference to FIGS. 16 to 18 (B). In the exposure apparatus according to the third embodiment, the same interferometer system as in the first embodiment is provided, and the positions of the wafer stage WST and the measurement stage MST are managed in the same manner as in the first embodiment. Has been done. In the following description, in order to avoid duplicate explanations, the description regarding the position management of both stages by the interferometer system will be omitted. During the following operation, each of the liquid supply device 5 and the liquid recovery device 6 of the liquid supply / discharge system 32 is operated by the main control device 20 according to the moving direction of the stage located in the first region directly under the projection unit PU. The opening / closing control of the bulb is performed as described above, and water is always filled directly under the tip lens 91 of the projection optical system PL. However, in the following, for the sake of clarity, the description regarding the control of the liquid supply device 5 and the liquid recovery device 6 will be omitted.
FIG. 16 shows a state in which the step-and-scan method of exposure to the wafer W on the wafer stage WST is performed in the same manner as in the first embodiment described above. At this time, the measurement stage MST stands by at a predetermined standby position that does not collide with the wafer stage WST.
Then, on the wafer stage WST side, for example, when the exposure of one lot (25 or 50 wafers in one lot) of the wafer W is completed, the main controller 20 shows the measurement stage MST in FIG. 17 (A). Move to the position. In the state of FIG. 17A, the measurement stage MST and the wafer stage WST are in contact with each other via the elastic sealing member.
Next, the main control device 20 starts an operation of simultaneously driving both stages WST and MST in the + X direction while maintaining the positional relationship between the wafer stage WST and the measurement stage MST in the X-axis direction.
When the wafer stage WST and the measurement stage MST are simultaneously driven by the main controller 20 in this way, they are held between the tip lens 91 of the projection unit PU and the wafer W in the state shown in FIG. 17 (A). The water that has been moving moves sequentially on the wafer W wafer stage WST measurement stage MST as the wafer stage WST and measurement stage MST move to the + X side. During the above movement, the wafer stage WST and the measurement stage MST maintain a positional relationship in which they come into contact with each other via the elastic seal member as in the state shown in FIG. 17 (A). FIG. 17 (B) shows a state in which water (immersion region) simultaneously straddles the wafer stage WST and the measurement stage MST during the above movement, that is, from the wafer stage WST to the measurement stage MST. The state just before the water is handed over is shown.
When the wafer stage WST and the measurement stage MST are simultaneously driven by a predetermined distance in the + X direction from the state shown in FIG. 17 (B), the measurement stage MST and the tip lens 91 are connected to each other as shown in FIG. 18 (A). Water is retained between them.
Next, the main control device 20 moves the wafer stage WST to a predetermined wafer exchange position and exchanges wafers, and in parallel with this, executes a predetermined measurement using the measurement stage MST as necessary. An example of this measurement is the baseline measurement of the alignment system ALG, which is performed after the reticle is replaced on the reticle stage RST. Specifically, in the main control device 20, the reticle alignment marks on the reticle corresponding to the pair of first reference marks on the reference mark plate FM provided on the measurement stage MST are used as the reticle alignment systems RAa and RAb described above. It is used to detect at the same time and detect the positional relationship between the pair of first reference marks and the corresponding reticle alignment marks. At the same time, the main control device 20 detects the positional relationship between the detection center of the alignment system ALG and the second reference mark by detecting the second reference mark on the reference mark plate FM with the alignment system ALG. Then, the main control device 20 has a positional relationship between the pair of first reference marks and the corresponding reticle alignment marks, a positional relationship between the detection center of the alignment system ALG and the second reference mark, and a pair of known first reference marks. The distance between the projection center (projection position) of the reticle pattern by the projection optical system PL and the detection center (detection position) of the alignment system ALG based on the positional relationship between and the second reference mark, that is, the baseline of the alignment system ALG. Ask for. The state at this time is shown in FIG. 18 (B).
In addition to the above-mentioned measurement of the baseline of the alignment system ALG, a plurality of pairs of reticle alignment marks are formed on the reticle, and a plurality of pairs of first reference marks are formed on the reference mark plate FM correspondingly. By measuring the relative position of at least two pairs of the first reference mark and the corresponding reticle alignment mark using the reticle alignment system RAa and RAb while moving the reticle stage RST and measurement stage MST, so-called reticle alignment can be achieved. Will be done.
In this case, the mark detection using the reticle alignment systems RAa and RAb is performed via the projection optical system PL and water.
Then, when the work on both the stages WST and MST described above is completed, the main control device 20 maintains, for example, the measurement stage MST and the wafer stage WST in contact with each other via the elastic sealing member. Driven in the XY plane, the wafer W after replacement is subjected to wafer alignment, that is, the alignment mark on the wafer W after replacement is detected by the alignment system ALG in the same manner as described above, and a plurality of shot regions on the wafer W are detected. Calculate the position coordinates of.
After that, in the main controller 20, the wafer stage WST and the measurement stage MST are simultaneously driven in the -X direction while maintaining the positional relationship between the wafer stage WST and the measurement stage MST in the X-axis direction. After the wafer W) is moved below the projection optical system PL, that is, after the immersion region is moved from the measurement stage MST onto the wafer stage WST (or wafer W), the measurement stage MST is retracted to a predetermined position. ..
After that, the main control device 20 executes a step-and-scan type exposure operation on the wafer W, and sequentially transfers the reticle pattern to a plurality of shot regions on the wafer W. The movement of the wafer stage WST to the acceleration start position for exposure of each shot region on the wafer W is performed immediately before the position coordinates of the plurality of shot regions on the wafer W obtained as a result of the above wafer alignment. It is done based on the measured baseline.
In the above description, the case of performing baseline measurement as a measurement operation has been described, but the present invention is not limited to this, and illuminance measurement, illuminance unevenness measurement, spatial image meter measurement, etc. can be performed using the measurement stage MST, for example, a wafer. It may be performed in parallel with the replacement, and the measurement result may be reflected in the subsequent exposure of the wafer W. Further, the sensor mounted on the measurement stage MST is not limited to the above-mentioned one, and for example, a sensor for measuring the wave surface may be provided.
Further, in the third embodiment described above, when the exposure to the wafer W of one lot is completed, the wafer stage WST and the measurement stage MST are brought into contact with each other to move, and the projection optical system PL and the measurement stage MST are moved. Although it is explained that water is retained between the wafers, it is better to perform the above operation every time each wafer is replaced so that water is retained between the projection optical system PL and the measurement stage MST. Needless to say. Further, the measurement of the baseline or the like may be performed every time the exposure of one lot is completed as described above, or may be performed every time the wafer is replaced or after the exposure of a predetermined number of wafers is completed. ..
As is clear from the above description, in the third embodiment, as in the first embodiment, at least a part of the stage drive system is composed of the wafer stage drive units (80 to 87). Further, at least a part of the stage apparatus is composed of the stage drive system, the wafer stage WST, and the measurement stage MST.
As described above, according to the exposure apparatus of the third embodiment and the stage apparatus included in the exposure apparatus, the wafer stage WST (or the measurement stage MST) is directly under the projection optical system PL to which the liquid (water) is supplied. When the measurement stage MST (or wafer stage WST) transitions from the first state located in the first region of the above to the second state located in the first region, both stages are X-axis by the above stage drive system. The wafer stage WST and the measurement stage MST are simultaneously driven in the X-axis direction while maintaining the contact state via the elastic sealing member in terms of direction. For this reason, water (liquid) remains supplied between the projection optical system PL and a specific stage directly under it (this stage switches from one stage to the other as it moves). , It is possible to transition from the first state in which one stage is located in the first region to the second state in which the other stage is located in the first region without leaking liquid from the gap between the two stages. .. That is, after the exposure operation via the projection optical system PL and water (liquid) is performed on the wafer stage WST side, the wafer is before the measurement is started directly under the projection optical system PL on the measurement stage MST side. From the state where water is held between the stage WST and the projection optical system PL to the state where water is held between the measurement stage MST and the projection optical system PL, the process of total recovery of water and resupply is performed. It is possible to make a transition without having to. The same applies from the end of the measurement by the measurement stage MST to the start of the exposure by the wafer stage WST.
Therefore, the time from the end of the exposure operation on the wafer stage WST side to the start of the measurement operation on the measurement stage MST side, and the time from the end of the measurement on the measurement stage MST side to the start of the exposure operation on the wafer stage WST side are set. It is possible to improve the throughput by shortening (that is, maintaining the same level as a normal exposure apparatus (non-immersion exposure apparatus) that is not immersion exposure). Further, since water (liquid) is always present on the image plane side of the projection optical system PL, it is possible to effectively prevent the above-mentioned water stain (water mark) from occurring.
In addition, by performing immersion exposure with high resolution and a large depth of focus compared to in the air, the pattern of the reticle R can be accurately transferred onto the wafer. For example, as a device rule, about 70 to 100 nm. Transfer of fine patterns can be realized. In addition, various measurements can be performed using the measurement member mounted on the measurement stage MST every time the wafer is replaced, and the measurement results can be reflected in the subsequent exposure operation, so the state is always adjusted with high accuracy. The wafer can be exposed with.
If the measurement operation performed using the measurement stage MST does not use the illumination light IL, the measurement operation on the measurement stage MST side is performed in parallel with the exposure operation of the wafer W on the wafer stage WST side. It is also possible.
Further, in the third embodiment described above, the wafer alignment is performed in a state where the measurement stage MST and the wafer stage WST are in contact with each other via the elastic sealing member, but before the wafer alignment is performed, the two stages are performed. The wafer stage WST may be moved below the projection optical system PL (and the alignment system ALG) to retract the measurement stage MST, and then the wafer alignment may be performed.
Further, in the third embodiment described above, the first reference mark and the second reference mark on the reference mark plate FM can be measured at the same time, but one of the first reference mark and the second reference mark. After measuring, the measurement stage MST may be moved while holding water on the measurement stage MST to measure the other.
As the elastic sealing member used in the first to third embodiments described above, as shown in FIG. 19 (A), + of one stage (here, stage WST2 (WST2', MST)). A groove 49 having a substantially trapezoidal cross section may be formed on the X side surface, and an elastic sealing member 93'attached to the groove 49 in an embedded state may be adopted. Even in this way, the same effect as that of each of the above embodiments can be obtained. The configuration shown in FIG. 19A may also be provided not only in one stage but also in both stages.
Further, as shown in FIG. 19 (B), a groove 49'having a substantially trapezoidal cross section is formed on the + Z surface of one stage (here, stage WST1 (WST1', WST)), and the groove 49' An elastic seal member 93 may be attached to the stage in an embedded state, and a flat plate 94 may be provided at the + X side end of the upper surface of the other stage (here, stage WST2 (WST2', MST)). In this case, both stages. When the flat plate 94 comes into contact with the elastic sealing member 93 in the state of being close to each other, it becomes possible to prevent water from leaking from between the two stages as shown in FIG. 19 (B). There is.
Further, as shown in FIG. 19 (C), by applying a water-repellent coat 95 on each of the opposite side surfaces of both stages with, for example, Teflon (registered trademark), water infiltrates and leaks into the gap between both stages. It may be possible to prevent. As a result, the non-contact state is maintained between the two stages, so that there is no possibility that the contact between the two stages causes deformation of the stage or deterioration of the position control accuracy.
In the first to third embodiments, the elastic sealing member is provided, but the elastic sealing member and other suppressing members for suppressing water leakage do not necessarily have to be provided. In this case, both stages may be in direct contact while one stage transitions from a state directly under the projection unit PU to a state in which the other stage is directly under the projection unit PU. Also, depending on the material of both stages, the surface condition and shape of the stages, the type of liquid, etc., even if both stages are close to each other at the time of transition (for example, the distance between both stages is 2 mm or less), the liquid If the liquid does not leak due to surface tension, the water repellent coating may not be applied. In short, it is sufficient to maintain the positional relationship so that the liquid does not leak from both stages so that both stages transition. In addition, the leakage of water (liquid) into the gap between the two stages during the transition may be tolerated if the amount of leakage is small, so the distance between the two stages during the transition is determined by the stage. It may be decided in consideration of not only the material, the state and shape of the stage surface, and the type of liquid, but also the allowable amount of leakage.
Further, in the first to third embodiments described above, the reflective surface of the moving mirror is not formed on the contact surface of the two stages, but this is not an essential requirement and water is formed from the gap between the two stages. A reflective surface of the moving mirror may be formed on the contact surface of at least one stage as long as leakage is prevented. As such an embodiment, for example, a fourth embodiment described below can be considered.
<< Fourth Embodiment >> Next, a fourth embodiment of the present invention will be described with reference to FIGS. 20 to 23 (B). Here, with respect to the same or equivalent parts as those in the third embodiment described above, the same reference numerals shall be used and the description thereof shall be simplified or omitted. In the exposure apparatus of the fourth embodiment, the configuration of the wafer stage apparatus (including the arrangement of the interferometer) is only partially different from that of the third embodiment described above, and the configurations of other parts are the first. It is the same as the device of the third embodiment. Therefore, the differences will be mainly described below from the viewpoint of avoiding duplicate explanations.
As shown in FIG. 20, the wafer stage apparatus 150 of the fourth embodiment includes a wafer stage WST'in which wafers can be mounted, a measurement stage MST' dedicated to measurement, and six laser interferometers (hereinafter, "" It is equipped with an interferometer system including IF1 to IF6 (abbreviated as "interferometer").
As shown in FIG. 21, the wafer stage WST'is a plate-shaped eaves 111a in which a part of the upper end portion on the -X side (the side facing the measurement stage MST') protrudes from the other portions. In the third embodiment described above, the above-mentioned point and the point that the + X-side end surface Se and the + Y-side end surface Sd are provided with a reflection surface formed by mirror processing in place of the above-mentioned moving mirror. Although different from the wafer stage WST, other parts are configured in the same manner as the wafer stage WST. Further, the upper surface of the wafer stage WST'is substantially flush with each other (same surface) including the surface of the wafer W and the eaves portion 111a in a state where the wafer W is placed.
As shown in FIG. 21, the measurement stage MST'can be engaged with the + X side (the side facing the wafer stage WST') with the tip of the eaves portion 11a via a predetermined clearance. A point where a protrusion 111c having a step portion 111b at its upper end is provided, and its -X side end face Sa, + Y side end face Sb, and + X side end face (+ X side end face of the protrusion 111c). The sc is different from the measurement stage MST according to the third embodiment in that a reflective surface formed by mirror processing is provided in place of the above-mentioned moving mirror, but the other parts are the measurement stage. It is configured in the same way as MST. In this case, as shown in FIG. 21, when the eaves portion 11a of the wafer stage WST'and the step portion 111b of the measurement stage MST'are engaged, the upper surface of the wafer stage WST'and the upper surface of the measurement stage MST' It is possible to form a full flat surface as a whole.
The wafer stage WST'and the measurement stage MST' of the present embodiment are in a two-dimensional plane by the wafer stage drive unit (80 to 87), similarly to the wafer stage WST and the measurement stage MST according to the third embodiment described above. It is designed to be driven.
As shown in FIG. 20, the interferometer system is located at a predetermined distance-X direction from the projection center (optical axis AX) of the projection optical system PL, the detection center of each of the alignment system ALG, and the projection center of the projection optical system PL. Three Y-axis interferometers IF3, IF4, and IF2, each of which has a length-measuring axis parallel to the Y-axis passing through distant positions, and the projection center (optical axis AX) of the projection optical system PL and the detection center of the alignment system ALG. Two X-axis interferometers IF1 and IF5, which have length measurement axes parallel to the X-axis to be connected, and length measurement parallel to the X-axis direction passing through a position separated from the projection center of the projection optical system PL in the predetermined distance-Y direction. It has an interferometer IF6 with an axis.
Here, when the wafer stage WST'is in a region (first region) near the position directly below the optical axis of the projection optical system PL and the wafer on the wafer stage WST' is exposed, the X-axis interferometer IF5, The position of the wafer stage WST'is controlled by the Y-axis interferometer IF3. In the following, the coordinate system defined by the length measurement axes of the X-axis interferometer IF5 and the Y-axis interferometer IF3 will be referred to as an exposure coordinate system.
Further, the wafer stage WST'is in a region (second region) near the position immediately below the detection center of the alignment system ALG, and the detection of the alignment mark formed on the wafer on the wafer stage WST', for example, wafer alignment, etc. The position of the wafer stage WST'is controlled by the X-axis interferometer IF5 and the Y-axis interferometer IF4. In the following, the coordinate system defined by the length measurement axes of the X-axis interferometer IF5 and the Y-axis interferometer IF4 will be referred to as an alignment coordinate system.
When the measurement stage MST'is in a region near the standby position as shown in FIG. 20, the position of the measurement stage MST' is managed by the X-axis interferometer IF1 and the Y-axis interferometer IF2. In the following, the coordinate system defined by the length measurement axes of the X-axis interferometer IF1 and the Y-axis interferometer IF2 will be referred to as a standby coordinate system.
The X-axis interferometer IF6 measures the position of the wafer stage WST'in the X-axis direction when the wafer is replaced after the wafer has been exposed.
As can be seen from the above description, in the present embodiment, the X-axis interferometers IF5 and IF1 are multi-axis interferometers having at least three optical axes separated in the Y-axis direction and the Z-axis direction, and each optical axis. The output value of can be measured independently. Therefore, in these X-axis interferometers IF5 and IF1, in addition to the position measurement of the wafer stage WST1'and measurement stage MST' in the X-axis direction, the amount of rotation around the Y-axis (rolling amount) and the amount of rotation around the Z-axis (the amount of rotation around the Z-axis) It is possible to measure the amount of yawing). Further, the X-axis interferometer IF6 may be a multi-axis interferometer or an interferometer having one optical axis.
Further, the Y-axis interferometers IF2, IF3, and IF4 are, for example, two-axis interferometers having two optical axes separated from each other in the Z-axis direction, and the output value of each optical axis can be measured independently. ing. Therefore, these Y-axis interferometers IF2, IF3, and IF4 can measure the amount of rotation (pitching amount) around the X-axis in addition to measuring the position of the wafer stage WST'or measurement stage MST' in the Y-axis direction. ing.
Hereinafter, the parallel processing operation using the wafer stage WST'and the measurement stage MST' provided in the exposure apparatus of the fourth embodiment will be described with reference to FIGS. 20 to 23 (B). During the following operation, each of the liquid supply device 5 and the liquid recovery device 6 of the liquid supply / discharge system 32 is operated by the main control device 20 according to the moving direction of the stage located in the first region directly under the projection unit PU. The opening / closing control of the bulb is performed as described above, and water is always filled directly under the tip lens 91 of the projection optical system PL. However, in the following, for the sake of clarity, the description regarding the control of the liquid supply device 5 and the liquid recovery device 6 will be omitted.
FIG. 20 shows a state in which the step-and-scan method of exposure to the wafer W on the wafer stage WST'is performed in the same manner as in the first embodiment described above. At this time, the measurement stage MST'stands by at a predetermined standby position that does not collide with the wafer stage WST'. In this case, the main control device 20 manages the position of the measurement stage MST'on the above-mentioned standby coordinate system and the position of the wafer stage WST' on the above-mentioned exposure coordinate system.
Then, on the wafer stage WST'side, for example, when the exposure to the wafer W of one lot (25 or 50 wafers in one lot) is completed, the main control device 20 sets the measurement stage MST'in FIG. 22 (A). Move to the indicated position. In the state of FIG. 22 (A), the measurement stage MST'and the wafer stage WST' are the -X side end surface of the eaves 111a provided on the wafer stage WST' and the measurement stage MST' as shown in FIG. It is in a state of being close to (or in contact with) the -X side surface of the step portion 111b.
Here, since the width dimension of the eaves 111a on the wafer stage WST'side in the X-axis direction is set larger than the width dimension of the step portion 111b on the measurement stage MST'side in the X-axis direction, the width dimension of the measurement stage MST' It is now possible to avoid contact between the mirrored end face (reflecting surface) Sc and the -X side end face (the part below the eaves 111a of the -X side end face) except for the eaves 111a of the wafer stage WST'. ing.
Next, the main control device 20 starts an operation of simultaneously driving both stages WST'and MST' in the + X direction while maintaining the positional relationship between the wafer stage WST'and the measurement stage MST' in the X-axis direction.
When the wafer stage WST'and the measurement stage MST' are simultaneously driven by the main controller 20 in this way, in the state of FIG. 22 (A), between the tip lens 91 of the projection unit PU and the wafer W. The retained water moves sequentially on the wafer W wafer stage WST' measurement stage MST' as the wafer stage WST'and the measurement stage MST' move to the + X side. During the above movement, the wafer stage WST'and the measurement stage MST' maintain the positional relationship as shown in FIG. FIG. 22 (B) shows a state in which water (immersion region) simultaneously straddles the wafer stage WST'and the measurement stage MST' during the above movement, that is, the measurement stage from the wafer stage WST'. The state just before the water is passed on the MST'is shown. Even in this state, the wafer stage WST'and the measurement stage MST maintain the positional relationship as shown in FIG. In the state of FIG. 21, the gap between the edge of the eaves 111a of the wafer stage WST'and the edge of the upper surface of the measurement stage MST' facing the eaves 111a is maintained at 0.3 mm or less, so that the gap is above the gap. Even if the water moves, it is possible to prevent the water from entering the gap. In this case, by making each of the upper surface of the eaves 111a and the upper surface of the measurement stage MST'water repellent (contact angle with water is 80 ° or more), it is necessary to more reliably prevent water from entering the gap. Can be done. During this movement, the interferometer beam from the interferometer IF2 does not hit the end face Sb of the measurement stage MST', but almost at the same time (immediately before or immediately after that), the interferometer beam of the interferometer IF3 moves to the measurement stage MST. Since it hits the end face Sb of', the reset (or preset) of the interferometer IF3 is executed by the main controller 20 at that time.
When the wafer stage WST'and the measurement stage MST' are driven at the same time in the + X direction by a predetermined distance from the state shown in FIG. 22 (B), the measurement stage MST'and the tip lens are further driven as shown in FIG. 23 (A). Water is retained between the 91 and 91.
The main controller 20 then drives the measurement stage MST'in the + X and + Y directions in parallel with driving the wafer stage WST'in the + X and -Y directions. During this drive, the interferometer beam from the interferometer IF5 does not hit the end face Se of the wafer stage WST', and the interferometer beam of the interferometer IF6 hits. With the meter beam hitting, preset the interferometer IF6 using the measured values of the interferometer IF5. On the other hand, since the interferometer beam from the interferometer IF4 comes to hit the end face Sb of the measurement stage MST', the main controller 20 will hit the interferometer IF3 at any time when both interferometer beams come to hit. Use the measured values of to preset the interferometer IF4. Further, since the interferometer beam from the interferometer IF5 hits the end face Sc of the measurement stage MST', the main controller 20 resets the interferometer IF5 (or presets in consideration of the measured value of the interferometer IF1). ) Is executed.
In this way, both stages are arranged as shown in FIG. 23 (B), in which the wafer stage WST'is located at a predetermined wafer exchange position and the measurement stage MST' is located directly under the projection optical system PL. .. In the wafer stage WST', if the interferometer beam of the interferometer IF4 does not hit, the position in the Y-axis direction cannot be measured by the interferometer system, but the Y position of the wafer stage WST' can be determined by a linear encoder (not shown). You just have to manage it. Alternatively, an interferometer capable of measuring the position of the wafer stage WST'in the Y-axis direction when the wafer stage WST'is in the wafer exchange position may be added. In the state shown in FIG. 23 (B), the wafer is replaced on the wafer stage WST'side, and in parallel with this, a predetermined measurement is performed on the measurement stage MST'side as necessary. As this measurement, for example, after the reticle is replaced on the reticle stage RST, the baseline measurement of the alignment system ALG is performed in the same manner as in the third embodiment. In this case, it is desirable to measure the position of the measurement stage MST'in the X-axis direction using the interferometer IF5 rather than the interferometer IF1. By measuring the position of the measurement stage MST'using the interferometer IF5 that measures the position of the wafer stage WST'in the X-axis direction during the exposure of the wafer W, the baseline measurement is performed to obtain the baseline (quantity). Alignment (positioning) of the wafer W based on the above can be performed with high accuracy.
As in the third embodiment, the above-mentioned reticle alignment is performed together with the above-mentioned baseline measurement of the alignment system ALG.
Then, when the work on both stages WST'and MST' described above is completed, the main controller 20 returns, for example, the measurement stage MST'and the wafer stage WST and' to the state shown in FIG. Wafer alignment, that is, alignment system ALG, is performed with respect to the replaced wafer W in the same manner as described above by driving in the XY plane while maintaining the state where the stage WST'and the measurement stage MST' are in close proximity (or contact). The alignment mark on the wafer W after replacement is detected by, and the position coordinates of a plurality of shot regions on the wafer W are calculated. The position of the wafer stage WST'at the time of this wafer alignment is managed on the above-mentioned alignment coordinate system.
After that, in the main controller 20, while maintaining the positional relationship between the wafer stage WST'and the measurement stage MST' in the X-axis direction, both stages WST and MST are simultaneously driven in the -X direction in the opposite direction to the previous stage to drive the wafer stage. After moving the WST'(wafer W) below the projection optical system PL, the measurement stage MST'is retracted to a predetermined position. During this time, the interferometer preset and the like in the interferometer system are performed in the reverse procedure of the above.
After that, the main control device 20 executes a step-and-scan exposure operation on the wafer W as in each of the above embodiments, and sequentially transfers the reticle pattern to a plurality of shot regions on the wafer W.
In the above description, the case of performing baseline measurement as a measurement operation has been described, but the present invention is not limited to this, and illuminance measurement, illuminance unevenness measurement, spatial image meter measurement, etc. are performed as in the third embodiment. It may be a thing. Further, as in the third embodiment described above, various measurements can be performed as necessary for each change of a predetermined number of wafers (for example, one wafer), not only after the exposure of one lot is completed. Further, a wave surface aberration measuring device may be mounted on the measurement stage MST'and measured to measure the wave surface aberration of the projection optical system PL. Alternatively, an observation camera may be installed on the measurement stage MST'to check the state of the immersion region formed on the image plane side of the projection optical system PL.
Further, the detection of the alignment mark of the wafer W after replacement by the alignment system ALG does not necessarily have to be executed while the wafer stage WST'and the measurement stage MST' are kept in a predetermined close state, and after the two stages are separated from each other. The detection of the alignment mark may be started, or the detection of a part of the alignment marks may be performed while the two stages are close to each other, and then the two stages may be separated from each other to detect the remaining alignment marks. good.
As described above, according to the exposure apparatus of the fourth embodiment, the wafer stage WST'(or the measurement stage MST') is projected to be supplied with liquid (water) as in the third embodiment. The stage drive system (wafer stage) when the measurement stage MST'(or wafer stage WST') transitions from the first state located in the first region directly under the optical system PL to the second state located in the first region. The drive unit (80 to 87) is included) to engage the eaves 111a on the wafer stage WST'side and the stage 111b on the measurement stage MST' side with the upper surface of the wafer stage WST'. A fully flat surface is realized by the upper surface of the measurement stage MST'. For this reason, water (liquid) is still held between the projection optical system PL and at least one stage immediately below it (this stage switches from one stage to the other as it moves). Therefore, it is possible to transition from the first state in which one stage is located in the first region to the second state in which the other stage is located in the first region without leaking liquid from the gap between the two stages. Become. That is, after the exposure operation via the projection optical system PL and water (liquid) is performed on the wafer stage WST'side, and before the measurement is started directly under the projection optical system PL on the measurement stage MST'side. , From the state where water is held between the wafer stage WST'and the projection optical system PL to the state where water is held between the measurement stage MST' and the projection optical system PL, all the water is recovered and resupplied. It is possible to make a transition without going through the process. The same applies from the end of the measurement by the measurement stage MST'to the start of the exposure by the wafer stage WST'.
Therefore, the time from the end of the exposure operation on the wafer stage WST'side to the start of the measurement operation on the measurement stage MST'side, and from the end of the measurement on the measurement stage MST side to the start of the exposure operation on the wafer stage WST' side. (That is, it can be maintained at the same level as a normal exposure apparatus (non-immersion exposure apparatus) that is not immersion exposure), and the throughput can be improved. Further, since water (liquid) is always present on the image plane side of the projection optical system PL, it is possible to effectively prevent the above-mentioned water stain (water mark) from occurring.
Further, in the fourth embodiment, since the eaves portion 111a is provided on the wafer stage WST'and the stage portion 111b that engages with the eaves portion 111b is provided on the measurement stage MST', the measurement stage MST'on the side where both stages face each other is provided. Even though the reflective surface is provided on the end face Sc, there is no problem between the measurement stage MST'and the projection optical system PL from the state where water is held between the wafer stage WST'and the projection optical system PL. It is possible to transition to a state in which water is retained (or vice versa).
In addition, by performing immersion exposure with high resolution and a large depth of focus compared to in the air, the pattern of the reticle R can be accurately transferred onto the wafer. For example, as a device rule, about 70 to 100 nm. Transfer of fine patterns can be realized.
In the fourth embodiment, the case where the eaves 111a is provided on the wafer stage WST'side and the protrusion 111c having the step 111b is provided on the measurement stage MST'side has been described. However, a protrusion having a step portion may be provided on the wafer stage WST'side, and an eaves portion may be provided on the measurement stage MST' side. Further, in the fourth embodiment described above, the case where the + X-side end of the measurement stage MST'is formed by a single protrusion 111c having a step 111b formed at the upper end has been described. This is done because it is necessary to use the end face Sc on the + X side of the protrusion 111c as a reflective surface, but it is not always necessary to do so. For example, if it is not necessary to form a reflective surface, the portion corresponding to the protrusion 111b may have a step portion that can be engaged with the eaves 111a via a predetermined clearance at the upper end. The rest may have any shape. Similarly, the shape of the remaining portion may be any shape as long as the eaves portion 111a is provided at the upper end portion on the wafer stage WST'side.
Further, in the fourth embodiment, the eaves portion 111a is integrally formed with the wafer stage WST', but the eaves portion 111a may be formed by a plate member detachable from the main body of the wafer stage WST'. good.
Further, a configuration may be adopted in which the elastic seal member is provided at a position where the elastic seal member is interposed between the eaves portion 111a and the step portion 111b while the eaves portion 111a and the step portion 111b are engaged with each other. .. That is, for example, by providing an elastic sealing member at the -X side end of the eaves 111a, water leakage between the wafer stage WST'and the measurement stage MST' can be completely prevented. Further, by providing the elastic sealing member, even when the wafer stage WST'and the measurement stage MST' come into contact with each other, the impact can be reduced. Of course, the elastic seal member may be provided on the measurement stage side, or instead of the elastic seal member, a water-repellent coat may be applied to at least one of the wafer stage and the measurement stage, where both stages face each other. Is also good.
The concept of providing an eaves portion on one of the stages of the fourth embodiment and providing a step portion on the other stage is not limited to the case where the two stages are a measurement stage and a wafer stage, and both of the two stages are provided. It can also be used in the case of a wafer stage.
That is, for example, when the configuration of the stage apparatus as in the first embodiment (see FIG. 2) or the second embodiment (see FIG. 12) described above is adopted, the wafer stage WST1 and the wafer stage WST2 are combined. Since the positional relationship with respect to the X-axis direction does not change, as shown in FIG. 24, the eaves 111a is on one side of one wafer stage in the X-axis direction, and the step 111b is on the other side of the other wafer stage in the X-axis direction. A configuration having a protrusion 111c formed at the upper end can be adopted.
Further, for example, when a stage device whose positional relationship with respect to the X-axis direction of the wafer stages WST1 and WST2 is changed as shown in FIG. 25 (A) is adopted, as shown in FIG. 25 (B). , Wafer stages WST1 "and WST2" each need to adopt a configuration including an eaves portion and a protrusion having a step portion. By adopting such a configuration, the wafer stage WST1 "is on the -X side and the wafer stage WST2" is on the + X side, or the wafer stage WST1 "is on the + X side and the wafer stage WST2" is on the + X side. In any case where it is on the -X side, as in the fourth embodiment described above, from the state where water is in contact with one wafer stage in a state where water leakage is suppressed, the other wafer stage It is possible to transition to a state where water is in contact with the top.
In each of the above-described embodiments, when the water held under the tip lens 91 moves from one stage onto the other stage, the water is held under the tip lens 91. The supply and collection of the lens may be stopped. In particular, when the pressure of water increases due to the supply of water, it is desirable to stop the supply and recovery of water because water easily leaks from the gap between the two stages.
In each of the above embodiments, ultrapure water (water) is used as the liquid, but it goes without saying that the present invention is not limited to this. As the liquid, a chemically stable liquid having a high transmittance of illumination light IL and a safe liquid, for example, a fluorine-based inert liquid may be used. As the fluorine-based inert liquid, for example, Fluorinert (trade name of 3M Ltd., USA) can be used. This fluorine-based inert liquid is also excellent in terms of cooling effect. Also, use a liquid that is transparent to the illumination light IL, has a high refractive index as much as possible, and is stable to the photoresist applied to the projection optical system or the wafer surface (for example, cedar oil). You can also do it. Also, F as a light source<sub>2</sub>When a laser is used, a fluorine-based liquid (for example, von Bryn oil) can be used as the liquid.
Further, in each of the above embodiments, the recovered liquid may be reused. In this case, a filter for removing impurities from the recovered liquid may be provided in the liquid recovery device, the recovery pipe, or the like. desirable.
In the above embodiment, the optical element on the image plane side of the projection optical system PL is assumed to be the tip lens 91, but the optical element is not limited to the lens, and the optical characteristics of the projection optical system PL are not limited to the lens. For example, it may be an optical plate (parallel flat plate, etc.) used for adjusting aberrations (spherical aberration, coma, etc.), or it may be a simple cover glass. The optical element on the most image plane side of the projection optical system PL (tip lens 91 in the above embodiment) is a liquid (above) due to adhesion of scattered particles generated from the resist or impurities in the liquid due to irradiation with illumination light IL. In the embodiment, the surface may be contaminated by contact with water). Therefore, the optical element may be detachably (replaceable) fixed to the lowermost portion of the lens barrel 40 and may be replaced regularly.
In such a case, if the optical element that comes into contact with the liquid is a lens, the cost of the replacement part is high and the time required for replacement becomes long, resulting in an increase in maintenance cost (running cost) and a decrease in throughput. .. Therefore, the optical element that comes into contact with the liquid may be, for example, a parallel flat plate that is cheaper than the tip lens 91.
Further, in each of the above embodiments, the range in which the liquid (water) flows may be set so as to cover the entire projection region (irradiation region of the illumination light IL) of the pattern image of the reticle, and the size thereof is arbitrary. Although it is good, in order to control the flow velocity, the flow rate, etc., it is desirable to make the area slightly larger than the irradiation area and make the area as small as possible.
Further, in each of the above embodiments, the case where the present invention is applied to a scanning exposure apparatus such as a step-and-scan method has been described, but it goes without saying that the scope of application of the present invention is not limited to this. That is, the present invention can be suitably applied to a step-and-repeat type reduction projection exposure apparatus.
The application of the exposure device is not limited to the exposure device for semiconductor manufacturing, for example, an exposure device for liquid crystal that transfers a liquid crystal display element pattern to a square glass plate, an organic EL, a thin film magnetic head, and an image pickup device. It can be widely applied to exposure equipment for manufacturing (CCD, etc.), micromachines, DNA chips, etc. Further, in order to manufacture reticle or mask used not only in microdevices such as semiconductor elements but also in light exposure equipment, EUV exposure equipment, X-ray exposure equipment, electron beam exposure equipment and the like, a glass substrate or a silicon wafer or the like. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern to a cathode ray.
Further, the light source of the exposure apparatus of each of the above embodiments is not limited to the ArF excimer laser light source, but the KrF excimer laser light source and F.<sub>2</sub>It is also possible to use a pulsed laser light source such as a laser light source, or an ultrahigh pressure mercury lamp that emits bright lines such as g-line (wavelength 436 nm) and i-line (wavelength 365 nm).
In addition, single-wavelength laser light in the infrared or visible region oscillated from a DFB semiconductor laser or fiber laser is amplified by a fiber amplifier doped with, for example, erbium (or both erbium and itterbium) to obtain a nonlinear optical crystal. A harmonic whose wavelength is converted to ultraviolet light may be used. Further, the magnification of the projection optical system may be not only a reduction system but also an equal magnification system and an enlargement system.
<< Device manufacturing method >> Next, an embodiment of a method for manufacturing a device using the exposure apparatus of each of the above embodiments in the lithography process will be described.
FIG. 26 shows a flowchart of a manufacturing example of a device (semiconductor chip such as IC or LSI, liquid crystal panel, CCD, thin film magnetic head, micromachine, etc.). As shown in FIG. 26, first, in step 201 (design step), the function / performance design of the device (for example, the circuit design of the semiconductor device, etc.) is performed, and the pattern design for realizing the function is performed. Subsequently, in step 202 (mask manufacturing step), a mask forming the designed circuit pattern is manufactured. On the other hand, in step 203 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.
Next, in step 204 (wafer processing step), an actual circuit or the like is formed on the wafer by a lithography technique or the like, as described later, using the mask and the wafer prepared in steps 201 to 203. Next, in step 205 (device assembly step), device assembly is performed using the wafer processed in step 204. This step 205 includes steps such as a dicing step, a bonding step, and a packaging step (chip encapsulation), if necessary.
Finally, in step 206 (inspection step), an inspection such as an operation confirmation test and an endurance test of the device created in step 205 is performed. After going through these steps, the device is completed and shipped.
FIG. 27 shows a detailed flow example of step 204 in the semiconductor device. In FIG. 27, in step 211 (oxidation step), the surface of the wafer is oxidized. In step 212 (CVD step), an insulating film is formed on the wafer surface. In step 213 (electrode forming step), electrodes are formed on the wafer by thin film deposition. In step 214 (ion driving step), ions are driven into the wafer. Each of the above steps 211 to 214 constitutes a pretreatment step of each stage of wafer processing, and is selected and executed according to the processing required in each stage.
When the above-mentioned pretreatment step is completed at each stage of the wafer process, the post-treatment step is executed as follows. In this post-treatment step, first, in step 215 (resist forming step), a photosensitizer is applied to the wafer. Subsequently, in step 216 (exposure step), the circuit pattern of the mask is transferred to the wafer by the exposure apparatus described above. Next, in step 217 (development step), the exposed wafer is developed, and in step 218 (etching step), the exposed member of the portion other than the portion where the resist remains is removed by etching. Then, in step 219 (resist removal step), the resist that has been etched and is no longer needed is removed.
By repeating these pretreatment steps and posttreatment steps, multiple circuit patterns are formed on the wafer.
By using the device manufacturing method of the present embodiment described above, the wafer (substrate) is exposed by the energy beam (illumination light IL) using the exposure apparatus of each of the above embodiments in the exposure step (step 216). Since the device pattern is formed on the top, high-throughput and high-precision exposure can be realized over a long period of time. Therefore, it is possible to improve the productivity of the highly integrated microdevice in which the fine pattern is formed.
As described above, the stage driving method of the present invention is suitable for driving the first stage and the second stage. Further, the exposure apparatus of the present invention is suitable for supplying a liquid between the projection optical system and the substrate and exposing the substrate with an energy beam via the projection optical system and the liquid. Moreover, the device manufacturing method of the present invention is suitable for the production of microdevices.
20 ... Main controller 20, 100 ... Exposure device, Lq ... Liquid, PL ... Projection optics, WST1, WST2 ... Wafer stage
27 sheets
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Numbers
- Publication
- 4952802
- Application
- 12363
Titles2
- Japanese
- 露光装置、露光方法、及びデバイス製造方法
- English
- Exposure equipment, exposure method, and device manufacturing method
Classification
- CPC, 9
- G03F7/70725
- G03F7/70733
- G03F7/70341
- Y10T29/49155
- G03F7/70666
- G03F7/70775
- G03F7/70758
- G03F7/70833
- G03F7/70908
- IPC, 3
- H01L21 027
- G03F7 20
- H01L21 68
