ATE388484T1
Apparatus and method for minimizing parasitic chemical vapor deposition during atomic layer deposition
Abstract
A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD) processes, is taught, wherein CVD-deposited contamination of ALD films is prevented by use of a pre-reaction chamber that effectively causes otherwise-contaminating gaseous constituents to deposit on wall elements of gas-delivery apparatus prior to entering the ALD chamber.
Term
Term ended
Projected expiry passed 21 November 2020, 5.8 years ago.
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44 members in 9 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 46610099 | United States of America | A |
Members44
| Document | Office | Kind | |
|---|---|---|---|
| WO0054320A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU3479100A | Australia | A | |
| US6200893B1 | United States of America | B1 | |
| US2001000866A1 | United States of America | A1 | |
| US2001002280A1 | United States of America | A1 | |
| WO0145158A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU1925401A | Australia | A | |
| EP1125324A1 | European Patent Office (EPO) | A1 | |
| US6305314B1 | United States of America | B1 | |
| KR20020010580A | Republic of Korea | A | |
| DE1125324T1 | Germany | T1 | |
| KR20020063234A | Republic of Korea | A | |
| EP1238421A1 | European Patent Office (EPO) | A1 | |
| US6451119B2 | United States of America | B2 | |
| US6451695B2 | United States of America | B2 | |
| US6475910B1 | United States of America | B1 | |
| US2002162506A1 | United States of America | A1 | |
| JP2002539326A | Japan | A | |
| US2002192954A1 | United States of America | A1 | |
| US2002192955A1 | United States of America | A1 | |
| US2002197864A1 | United States of America | A1 | |
| US6540838B2 | United States of America | B2 | |
| CN1415115A | China | A | |
| JP2003517731A | Japan | A | |
| US6602784B2 | United States of America | B2 | |
| US2003183171A1 | United States of America | A1 | |
| US6630401B2 | United States of America | B2 | |
| US6638862B2 | United States of America | B2 | |
| EP1125324A4 | European Patent Office (EPO) | A4 | |
| CN1191614C | China | C | |
| KR100489140B1 | Republic of Korea | B1 | |
| KR100522951B1 | Republic of Korea | B1 | |
| EP1125324B1 | European Patent Office (EPO) | B1 | |
| AT323948T | Austria | T | |
| ATE323948T1 | Austria | T1 | |
| DE60027401D1 | Germany | D1 | |
| EP1238421A4 | European Patent Office (EPO) | A4 | |
| JP3798248B2 | Japan | B2 | |
| DE60027401T2 | Germany | T2 | |
| EP1238421B1 | European Patent Office (EPO) | B1 | |
| AT388484T | Austria | T | |
| ATE388484T1This record | Austria | T1 | |
| DE60038250D1 | Germany | D1 | |
| DE60038250T2 | Germany | T2 |
Numbers
- Application
- 982192
Titles2
- English
- APPARATUS AND METHOD FOR MINIMIZING PARASITIC CVD DURING ATOMIC LAYER DEPOSITION
- German
- APPARAT UND VERFAHREN FÜR DIE MINIMIERUNG PARASITISCHER CVD WÄHREND DER ATOMSCHICHT- BESCHICHTUNG
Classification
- CPC, 10
- C23C16/44
- C23C16/4554
- C23C16/4401
- C23C16/452
- C23C16/45536
- C23C16/45544
- H10P14/69391
- H10P14/6339
- H10P14/6336
- H10P14/43
- IPC, 7
- H10P14 40
- C23C16 44
- C23C16 452
- C23C16 455
- H10P14 24
- H10P14 69
- H10P14 692