ATE388484T1

Apparatus and method for minimizing parasitic chemical vapor deposition during atomic layer deposition

Abstract

A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD) processes, is taught, wherein CVD-deposited contamination of ALD films is prevented by use of a pre-reaction chamber that effectively causes otherwise-contaminating gaseous constituents to deposit on wall elements of gas-delivery apparatus prior to entering the ALD chamber.

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Projected expiry passed 21 November 2020, 5.8 years ago.

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EP1125324A1European Patent Office (EPO)A1
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KR20020010580ARepublic of KoreaA
DE1125324T1GermanyT1
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EP1238421A1European Patent Office (EPO)A1
US6451119B2United States of AmericaB2
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EP1125324A4European Patent Office (EPO)A4
CN1191614CChinaC
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KR100522951B1Republic of KoreaB1
EP1125324B1European Patent Office (EPO)B1
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EP1238421A4European Patent Office (EPO)A4
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