AT388484T
Apparatus and method for minimizing parasitic chemical vapor deposition during atomic layer deposition
Abstract
The claimed is in stacking, a invention is an atomic deposition (invention) and a chemical deposition processing, avoiding film deposition the new method and device for pollution, the CVD deposition pollution of ALD film by using with the pollutant gas front or more ALD chamber effectively the preheating reaction cavity on gas delivery device the wall is deposited preventing.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
44 members in 9 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 46610099 | United States of America | A |
Members44
| Document | Office | Kind | |
|---|---|---|---|
| WO0054320A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU3479100A | Australia | A | |
| US6200893B1 | United States of America | B1 | |
| US2001000866A1 | United States of America | A1 | |
| US2001002280A1 | United States of America | A1 | |
| WO0145158A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU1925401A | Australia | A | |
| EP1125324A1 | European Patent Office (EPO) | A1 | |
| US6305314B1 | United States of America | B1 | |
| KR20020010580A | Republic of Korea | A | |
| DE1125324T1 | Germany | T1 | |
| KR20020063234A | Republic of Korea | A | |
| EP1238421A1 | European Patent Office (EPO) | A1 | |
| US6451119B2 | United States of America | B2 | |
| US6451695B2 | United States of America | B2 | |
| US6475910B1 | United States of America | B1 | |
| US2002162506A1 | United States of America | A1 | |
| JP2002539326A | Japan | A | |
| US2002192954A1 | United States of America | A1 | |
| US2002192955A1 | United States of America | A1 | |
| US2002197864A1 | United States of America | A1 | |
| US6540838B2 | United States of America | B2 | |
| CN1415115A | China | A | |
| JP2003517731A | Japan | A | |
| US6602784B2 | United States of America | B2 | |
| US2003183171A1 | United States of America | A1 | |
| US6630401B2 | United States of America | B2 | |
| US6638862B2 | United States of America | B2 | |
| EP1125324A4 | European Patent Office (EPO) | A4 | |
| CN1191614C | China | C | |
| KR100489140B1 | Republic of Korea | B1 | |
| KR100522951B1 | Republic of Korea | B1 | |
| EP1125324B1 | European Patent Office (EPO) | B1 | |
| AT323948T | Austria | T | |
| ATE323948T1 | Austria | T1 | |
| DE60027401D1 | Germany | D1 | |
| EP1238421A4 | European Patent Office (EPO) | A4 | |
| JP3798248B2 | Japan | B2 | |
| DE60027401T2 | Germany | T2 | |
| EP1238421B1 | European Patent Office (EPO) | B1 | |
| AT388484TThis record | Austria | T | |
| ATE388484T1 | Austria | T1 | |
| DE60038250D1 | Germany | D1 | |
| DE60038250T2 | Germany | T2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 982192
Titles2
- German
- APPARAT UND VERFAHREN FÜR DIE MINIMIERUNG PARASITISCHER CVD WÄHREND DER ATOMSCHICHT- BESCHICHTUNG
- English
- APPARATUS AND METHOD FOR MINIMIZING PARASITIC CVD DURING THE ATOMIC COATING
Classification
- CPC, 16
- H01L21/31691
- C23C16/44
- C23C16/4401
- C23C16/452
- C23C16/45536
- C23C16/45544
- H01L21/02178
- H01L21/02274
- H01L21/0228
- H01L21/28556
- H01L21/31604
- H01L21/31616
- H01L21/31637
- H01L21/31641
- H01L21/31645
- H01L21/318
- IPC, 8
- C23C16 44
- C23C16 452
- C23C16 455
- H01L21 205
- H01L21 285
- H01L21 314
- H01L21 316
- H01L21 44