Nova Patents
ATE323948T1

Radical-assisted sequential cvd

Abstract

A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.

Term

Term ended

Projected expiry passed 1 February 2020, 6.6 years ago.

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44 members in 9 offices

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26795399United States of AmericaA

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WO0054320A1World Intellectual Property Organization (WIPO)A1
AU3479100AAustraliaA
US6200893B1United States of AmericaB1
US2001000866A1United States of AmericaA1
US2001002280A1United States of AmericaA1
WO0145158A1World Intellectual Property Organization (WIPO)A1
AU1925401AAustraliaA
EP1125324A1European Patent Office (EPO)A1
US6305314B1United States of AmericaB1
KR20020010580ARepublic of KoreaA
DE1125324T1GermanyT1
KR20020063234ARepublic of KoreaA
EP1238421A1European Patent Office (EPO)A1
US6451119B2United States of AmericaB2
US6451695B2United States of AmericaB2
US6475910B1United States of AmericaB1
US2002162506A1United States of AmericaA1
JP2002539326AJapanA
US2002192954A1United States of AmericaA1
US2002192955A1United States of AmericaA1
US2002197864A1United States of AmericaA1
US6540838B2United States of AmericaB2
CN1415115AChinaA
JP2003517731AJapanA
US6602784B2United States of AmericaB2
US2003183171A1United States of AmericaA1
US6630401B2United States of AmericaB2
US6638862B2United States of AmericaB2
EP1125324A4European Patent Office (EPO)A4
CN1191614CChinaC
KR100489140B1Republic of KoreaB1
KR100522951B1Republic of KoreaB1
EP1125324B1European Patent Office (EPO)B1
AT323948TAustriaT
ATE323948T1This recordAustriaT1
DE60027401D1GermanyD1
EP1238421A4European Patent Office (EPO)A4
JP3798248B2JapanB2
DE60027401T2GermanyT2
EP1238421B1European Patent Office (EPO)B1
AT388484TAustriaT
ATE388484T1AustriaT1
DE60038250D1GermanyD1
DE60038250T2GermanyT2