Radical-assisted sequential cvd
Abstract
A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.
Term
Term ended
Projected expiry passed 1 February 2020, 6.6 years ago.
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44 members in 9 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 26795399 | United States of America | A |
Members44
| Document | Office | Kind | |
|---|---|---|---|
| WO0054320A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU3479100A | Australia | A | |
| US6200893B1 | United States of America | B1 | |
| US2001000866A1 | United States of America | A1 | |
| US2001002280A1 | United States of America | A1 | |
| WO0145158A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU1925401A | Australia | A | |
| EP1125324A1 | European Patent Office (EPO) | A1 | |
| US6305314B1 | United States of America | B1 | |
| KR20020010580A | Republic of Korea | A | |
| DE1125324T1 | Germany | T1 | |
| KR20020063234A | Republic of Korea | A | |
| EP1238421A1 | European Patent Office (EPO) | A1 | |
| US6451119B2 | United States of America | B2 | |
| US6451695B2 | United States of America | B2 | |
| US6475910B1 | United States of America | B1 | |
| US2002162506A1 | United States of America | A1 | |
| JP2002539326A | Japan | A | |
| US2002192954A1 | United States of America | A1 | |
| US2002192955A1 | United States of America | A1 | |
| US2002197864A1 | United States of America | A1 | |
| US6540838B2 | United States of America | B2 | |
| CN1415115A | China | A | |
| JP2003517731A | Japan | A | |
| US6602784B2 | United States of America | B2 | |
| US2003183171A1 | United States of America | A1 | |
| US6630401B2 | United States of America | B2 | |
| US6638862B2 | United States of America | B2 | |
| EP1125324A4 | European Patent Office (EPO) | A4 | |
| CN1191614C | China | C | |
| KR100489140B1 | Republic of Korea | B1 | |
| KR100522951B1 | Republic of Korea | B1 | |
| EP1125324B1 | European Patent Office (EPO) | B1 | |
| AT323948T | Austria | T | |
| ATE323948T1This record | Austria | T1 | |
| DE60027401D1 | Germany | D1 | |
| EP1238421A4 | European Patent Office (EPO) | A4 | |
| JP3798248B2 | Japan | B2 | |
| DE60027401T2 | Germany | T2 | |
| EP1238421B1 | European Patent Office (EPO) | B1 | |
| AT388484T | Austria | T | |
| ATE388484T1 | Austria | T1 | |
| DE60038250D1 | Germany | D1 | |
| DE60038250T2 | Germany | T2 |
Numbers
- Application
- 913324
Titles2
- English
- RADICAL-ASSISTED SEQUENTIAL VAPOR PHASE DEPOSIT
- German
- RADIKAL-UNTERSTÜTZTE SEQUENTIELLE GASPHASENABCHEIDUNG
Classification
- CPC, 9
- C23C16/44
- C23C16/452
- C23C16/45536
- C23C16/4554
- H10P14/69391
- H10P14/6339
- H10P14/6336
- H10P14/432
- H10P14/43
- IPC, 6
- C23C16 44
- C23C16 452
- C23C16 455
- H01L21 285
- H01L21 314
- H01L21 316