Radical-assisted sequential cvd

(57) The new method for carrying out CVD deposition is suggested on a summary board, and according to this method. In the step carried out by turns, radical species are used for the sediment from a molecular precursor, and process the material deposited from the molecular precursor, and a substrate face is adjusted with the existing reactant chemical substance as preparation of the following molecular precursor step. The unified composite membrane is formed of a repetitive cycle. In a desirable enforcement form, the sediment from a molecular precursor is metal, and the radical in the step carried out by turns removes the ligand left behind by the metal precursor reaction, and is used for oxidizing or nitriding a surface of metal in a continuous layer. The combination of hardware for different various chemical substances to be suggested for various films, and carry out the present invention is suggested.