US20080124460A1

Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby

Claim Score by NHIP

Read claim 11, the broadest

Abstract

A method of making a photoactive coating includes depositing a first coating material containing zirconium oxide over at least a portion of a substrate and depositing a second coating material containing titanium oxide over at least a portion of the first coating material to provide a coated substrate. At least one of the first and second coating materials is deposited by pyrolytic deposition.

US20080124460A1, drawing sheet 1
Sheet 1 of 12

Term

Term ended

Projected expiry passed 30 August 2021, 5.1 years ago.

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15 claims: 3 independent, 12 dependent

  1. 1
    A method of making a transparency, comprising the steps of:providing a glass substrate having at least one surface;pyrolytically depositing a first continuous film comprising zirconium oxide in the cubic, baddeleyite or orthorhombic crystalline phase directly on substantially all of the glass substrate surface;and pyrolytically depositing a second continuous film comprising a material selected from at least one metal oxide or semiconductor metal oxide on substantially all of the first film.
  2. 11
    Broadest claimClaim Score 83, broad(NHIP)A method of making a transparency, comprising:providing a glass substrate having at least one surface;pyrolytically depositing a first continuous layer comprising zirconium oxide in the cubic, baddeleyite or orthorhombic crystalline phase directly on substantially all of the substrate;and pyrolytically depositing a second continuous layer comprising titanium oxide on substantially all of the first layer.
  3. 15
    A method of making a coated substrate, comprising:providing a glass substrate having at least one surface;pyrolytically depositing a first continuous layer comprising zirconium oxide in the cubic, baddeleyite or orthorhombic crystalline phase in contact with at least a portion of the glass substrate surface;and depositing a second continuous layer comprising a material selected from at least one metal oxide or semiconductor metal oxide on substantially all of the first layer.