EP2400531A3
Diamond semiconductor element and process for producing the same
Abstract
A p-type diamond semiconductor, characterized by comprising, as a dopant element, any of the elements, Al, Be, Ca, Cd, Ga, In, Li, Mg and Zn is disclosed.
Term
Term ended
Projected expiry passed 20 June 2026, 0.3 years ago.
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1 sheet
Sheet 1
Every citation, both ways
| Reference | Relation | Cited during |
|---|---|---|
| HUGGINS C M ET AL: "Diamonds containing controllable impurity concentrations", NATURE UK, vol. 194, 2 June 1962 (1962-06-02), pages 829 - 830, XP002661911 | Non-patent | Search report |
| DEAN P J ET AL: "Intrinsic and extrinsic recombination radiation from natural and synthetic aluminum-doped diamond", PHYSICAL REVIEW USA, vol. 140, no. 1A, 4 October 1965 (1965-10-04), pages A352 - A369, XP002661912 | Non-patent | Search report |
45 members in 6 offices
Priority claims9
| Document | Office | Kind | Date |
|---|---|---|---|
| 2005179751 | Japan | – | |
| 2005179751 | Japan | A | |
| 2005270541 | Japan | – | |
| 2005270541 | Japan | A | |
| 2005307231 | Japan | – | |
| 2005307231 | Japan | A | |
| 2006061838 | Japan | – | |
| 2006061838 | Japan | A | |
| 06766995 | European Patent Office (EPO) | A |
Members45
| Document | Office | Kind | |
|---|---|---|---|
| WO2006137401A1 | World Intellectual Property Organization (WIPO) | A1 | |
| KR20070083755A | Republic of Korea | A | |
| CN101053075A | China | A | |
| EP1895579A1 | European Patent Office (EPO) | A1 | |
| US2008134959A1 | United States of America | A1 | |
| US2008134960A1 | United States of America | A1 | |
| US2008217626A1 | United States of America | A1 | |
| JPWO2006137401A1 | Japan | A1 | |
| EP1895579A4 | European Patent Office (EPO) | A4 | |
| CN100508144C | China | C | |
| KR100913401B1 | Republic of Korea | B1 | |
| US2009261347A1 | United States of America | A1 | |
| US2010289030A9 | United States of America | A9 | |
| US2011068352A1 | United States of America | A1 | |
| US2011070694A1 | United States of America | A1 | |
| US7973339B2 | United States of America | B2 | |
| JP2011176335A | Japan | A | |
| JP2011176336A | Japan | A | |
| JP2011176337A | Japan | A | |
| JP2011225440A | Japan | A | |
| EP2400530A2 | European Patent Office (EPO) | A2 | |
| EP2400531A2 | European Patent Office (EPO) | A2 | |
| EP2400532A2 | European Patent Office (EPO) | A2 | |
| EP2400533A2 | European Patent Office (EPO) | A2 | |
| US2012034737A1 | United States of America | A1 | |
| EP2400533A3 | European Patent Office (EPO) | A3 | |
| EP2400531A3This record | European Patent Office (EPO) | A3 | |
| EP2400532A3 | European Patent Office (EPO) | A3 | |
| JP4908409B2 | Japan | B2 | |
| EP2400530A3 | European Patent Office (EPO) | A3 | |
| US8221548B2 | United States of America | B2 | |
| US8242511B2 | United States of America | B2 | |
| US8328936B2 | United States of America | B2 | |
| US8486816B2 | United States of America | B2 | |
| US8487319B2 | United States of America | B2 | |
| JP5363525B2 | Japan | B2 | |
| JP5542087B2 | Japan | B2 | |
| JP5551648B2 | Japan | B2 | |
| EP2790207A1 | European Patent Office (EPO) | A1 | |
| EP2816588A2 | European Patent Office (EPO) | A2 | |
| EP2816588A3 | European Patent Office (EPO) | A3 | |
| EP2790207B1 | European Patent Office (EPO) | B1 | |
| EP1895579B1 | European Patent Office (EPO) | B1 | |
| EP2816588B1 | European Patent Office (EPO) | B1 | |
| EP2400533B1 | European Patent Office (EPO) | B1 |
27 legal events, as the office reported them to INPADOC
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|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | |
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| Information on inventor provided before grant (corrected)RIN1 | RIN1 | |
| Designated contracting statesAK | AK | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
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| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Divisional application: reference to earlier applicationAC | AC | |
| Designated contracting statesAK | AK | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 2400531
- Application
- 111824603
Titles3
- German
- Diamanthalbleiterbauelement und Herstellungsverfahren dafür
- English
- Diamond semiconductor element and process for producing the same
- French
- Élément semi-conducteur en diamant et son procédé de fabrication
Classification
- CPC, 33
- H10P95/90
- H10P10/00
- C23C16/274
- C23C16/278
- C30B25/105
- C30B29/04
- C30B33/02
- C30B33/06
- H10H20/014
- H10D62/405
- H10D62/8303
- H10D64/62
- H10D48/031
- H10D30/01
- H10D30/031
- H10D30/061
- H10D10/40
- H10D30/60
- H10D30/6741
- H10D30/87
- H10P90/123
- H10P90/14
- H10P14/2903
- H10P14/2926
- H10P14/3406
- H10P14/3444
- H10P14/3466
- H10P30/2044
- H10P14/24
- H10P30/28
- H10P30/21
- C23C16/27
- H10D10/00
- IPC, 29
- H01L21 338
- C23C16 27
- C30B29 04
- H01L21 331
- H01L29 73
- H01L29 812
- H01L33 00
- H01L21 336
- H01L29 786
- C30B25 10
- C30B31 22
- C30B33 02
- H01L21 04
- H01L29 04
- H01L29 45
- H01L29 732
- H10D30 01
- H10D62 815
- H10D10 00
- H10D10 40
- H10D30 67
- H10D30 87
- H10D62 40
- H10D62 50
- H10D62 83
- H10D62 834
- H10D64 20
- H10D64 23
- H10D64 62
Designated states1
- Contracting states, 1
- United Kingdom