EP1702338B1

Robust data duplication and improved update method in a multibit non-volatile memory

Abstract

This record has no abstract on file.

EP1702338B1, drawing sheet 1
Sheet 1 of 63

Term

Term ended

Expired 22 December 2024, 1.8 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

7 claims: 1 independent, 6 dependent

  1. 1
    A method of storing data in a multi-state memory having an array of memory cells, each memory cell able to store multiple bits of data, each of the multiple bits programmable by successive programming pass on each memory cell, the method comprising:concurrently programming first and second copies of a first data into a group of memory cells by programming one of said multiple bits from each memory cell with a programming pass;and programming second data by programming another bit on each of the memory cells of the group with an additional programming pass, excluding from said programming of said second data the memory cells associate with at least one of the two copies of the first , data such that any problems resulting from programming said another bit will not corrupt both copies of the data.
  2. 2
    A method according to Claim 1, wherein said excluding includes concurrently programming first and second copies of said data into the group of memory cells using a binary mode of said multi-state memory, such that no further programming pass will take place.
  3. 3
    A method according to Claim 1 or Claim 2, wherein:said multi-state memory is organised into blocks of memory cells, each block of memory cells is erasable together;and said two copies are concurrently programmed into two different blocks.
  4. 4
    A method according to Claim 1, wherein said non-volatile memory has floating gate memory cells.
  5. 5
    A method according to Claim 1, wherein said non-volatile memory is flash EEPROM.
  6. 6
    A method according to Claim 1, wherein said non-volatile memory is NROM.
  7. 7
    A method according to Claim 1, wherein said non-volatile memory is in a memory card.