EP1702338A2

Robust data duplication and improved update method in a multibit non-volatile memory

Abstract

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Projected expiry passed 22 December 2024, 1.8 years ago.

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35 claims: 18 independent, 17 dependent

  1. 1
    Claims of equivalent WO 2005066970 A2 IT IS CLAIMED:1. In a multi-state memory having an array of memory cells, each memory cell able to store multiple bits of data, each ofthe multiple bits programmable by successive programming pass on each memory cell, a method of storing two copies of data, comprising: concurrently programming first and second copies of said data into a group of memory cells using one of said multiple bits from each memory cell;and excluding using memory cells associate with at least one ofthe two copies in a subsequent programming of other of said multiple bits of said group of memory cells, such that any problems resulting from the subsequent programming will not corrupt both copies ofthe data.
  2. 11
    In a multi-state memory having an array of memory cells, each memory cell able to store multiple bits of data, each ofthe multiple bits programmable by successive programming pass on each memory cell, a method of storing two copies of data, comprising:coding said multiple bits relative to the multiple memory states such that a bit programmed in an earlier programming pass is insensitive to an incomplete programming in a subsequent programming pass;and concurrently programming first and second copies of said data into a group of memory cells using one of said multiple bits from each memory cell.
  3. 16
    In a nonvolatile memory organized into blocks, each block partitioned into memory units that are erasable together, a method of storing and updating data, comprising:(a) maintaining different types of data;(b) assigning a ranking to said different types of data;(c) storing updates of said different types of data among a plurality of blocks so that each block is storing essentially data ofthe same type;(d) in response to a block having less than a predetermined number of empty memory units and having data type of highest rank among said plurality of blocks, relocating current updates of data of said block to another block;and (e) repeating (c) to (d) unless interrupted.
  4. 17
    The method as in claiml6, wherein a first data type is ranked higher than a second data type when the data ofthe first type is updated less frequently than that ofthe second type.
  5. 18
    The method as in claiml 6, wherein a first data type is ranked higher than a second data type when an update ofthe data ofthe first type is caused by a cascade effect ofthe update data ofthe second type substantially filling a block.
  6. 20
    The method as in any one of claims 16-19, wherein said nonvolatile memory has floating gate memory cells.
  7. 21
    The method as in any one of claims 16-19, wherein said nonvolatile memory is flash EEPROM.
  8. 22
    The method as in any one of claims 16-19, wherein said nonvolatile memory is NROM.
  9. 23
    The method as in any one of claims 16-19, wherein said nonvolatile memory is in a memory card.
  10. 24
    The method as in any one of claims 16-19, wherein said nonvolatile memory has memory cells that each stores one bit of data.
  11. 25
    The method as in any one of claims 16-19, wherein said nonvolatile memory has memory cells that each stores more than one bit of data.
  12. 26
    A nonvolatile memory, comprising:a memory array organized into blocks, each block partitioned into memory units that are erasable together;a plurality of blocks each for storing updates of a type of data, each type of data having a rank among a plurality thereof;and a controller for relocating current updates in a block to another block in response to said block having less than a predetermined number of empty memory units and having data type of highest rank among said plurality of blocks.
  13. 30
    The nonvolatile memory as in any one of claims 26-29, wherein said nonvolatile memory has floating gate memory cells.
  14. 31
    The nonvolatile memory as in any one of claims 26-29, wherein said nonvolatile memory is flash EEPROM.
  15. 32
    The nonvolatile memory as in any one of claims 26-29, wherein said nonvolatile memory is NROM.
  16. 33
    The nonvolatile memory as in any one of claims 26-29, wherein said nonvolatile memory is in a memory card.
  17. 34
    The nonvolatile memory as in any one of claims 26-29, wherein said nonvolatile memory has memory cells that each stores one bit of data.
  18. 35
    The nonvolatile memory as in any one of claims 26-29, wherein said nonvolatile memory has memory cells that each stores more than one bit of data.
Independent claims18