EP1520892A2

Polishing composition

Abstract

A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.

EP1520892A2, drawing sheet 1 — Sheet 1 of 61

Term

Term ended

Projected expiry passed 30 September 2024, 2 years ago.

20 claims: 4 independent, 16 dependent

1
A polishing composition to be used in polishing for forming wiring in a semiconductor device, the polishing composition characterized by :a surfactant;a silicon oxide;at least one selected from the group consisting of carboxylic acid and alpha-amino acid;a corrosion inhibitor;an oxidant;and water;wherein said surfactant contains at least one selected from the compounds, each represented by any of general formulas (1) to (7), and the salts thereof, in general formula (1), R 1 represents an alkyl group having 8 to 16 carbon atoms, R 2 represents a hydrogen atom, a methyl group, or an ethyl group, R 3 represents an alkylene group having 1 to 8 carbon atoms, -(CH 2 CH 2 O) 1 -, -(CH 2 CH(CH 3 )O) m -, or a combination of at least two of those, 1 and m are integers of 1 to 8 when R 3 represents -(CH 2 CH 2 O) 1 - or -(CH 2 CH(CH 3 )O) m -, the sum of 1 and m is 8 or less when R 3 represents the combination of -(CH 2 CH 2 O) 1 - and -(CH 2 CH(CH 3 )O) m -, and X 1 represents a carboxy group or a sulfone group, R 4 -Z-Y 1 -X 2 (2) R 4 -Z-X 2 (3) in general formulas (2) and (3), R 4 represents an alkyl group having 8 to 16 carbon atoms, Z is a functional group represented by chemical formula (i) or (ii), Y 1 represents -(CH 2 CH 2 O) n -, -(CH 2 CH(CH 3 )O) p -, or the combination of -(CF 2 CH 2 O) n - and - (CH 2 CH(CH 3 )O) p -, n and p are integers of 1 to 6 when Y 1 represents - (CH 2 CH 2 O) n - or - (CH 2 CH(CH 3 )O) p -, the sum of n and p is 6 or less when Y 1 represents the combination of -(CH 2 CH 2 O) n - and -(CH 2 CH(CH 3 )O) P -, and X 2 represents a phosphate group or a sulfone group, and in general formulas (4) to (7), each of R 5 and R 6 represents a hydrogen atom, a hydroxy group, or an alkyl group having 8 to 16 carbon atoms, each of Y 2 and Y 3 represents -(CH 2 CH 2 O) q -, -(CH 2 CH (CH 3 )O) r -, or the combination of -(CH 2 CH 2 O) q - and - (CH 2 CH(CH 3 )O) r -, q and r are integers of 1 to 6 when Y 2 or Y 3 represents (CH 2 CH 2 O) q - or - (CH 2 CH (CH 3 ) O) r -, and the sum of q and r is an integer of 6 or less when Y 2 or Y 3 represents the combination of - (CH 2 CH 2 O) q - and -(CH 2 CH(CH 3 )O) r -.
4
The polishing composition according to any one of claims 1 to 3, characterized in that the content of the surfactant in the polishing composition is 0.025 to 0.2 nass%.
5
The polishing composition according to any one of claims 1 to 4, characterized in that said corrosion inhibitor is a benzotriazole derivative represented by general formula:where R 14 represents an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those.
6
A polishing composition to be used in polishing for forming wiring in a semiconductor device, the polishing composition characterized by :alpha-amino acid;a benzotriazole derivative represented by general formula: where R 14 represents an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those;a silicon oxide;a surfactant;an oxidant;and water.
9
The polishing composition according to any one of claims 6 to 8, characterized in that said alpha-amino acid is alanine.
10
The polishing composition according to any one of claims 6 to 9, characterized in that the content of alpha-amino acid in the polishing composition is 0.01 to 2 mass%.
11
A polishing composition to be used in polishing for forming wiring in a semiconductor device, the polishing composition characterized by :a silicon oxide;at least one selected from the group consisting of carboxylic acid and alpha-amino acid;a corrosion inhibitor;a surfactant;a persulfate;and water;wherein the polishing composition further comprises an aluminum ion, and the pH of the polishing composition is not less than 7 and less than 12.
14
The polishing composition according to any one of claims 11 to 13, characterised in that the content of the persulfate is 0.5 to 10 mass%.
15
The polishing composition according to any one of claims 11 to 14, characterized in that said persulfate is an ammonium persulfate.
16
A polishing composition to be used in polishing for forming wiring in a semiconductor device, the polishing composition characterized by :a first silicon oxide having a 50-percent particle diameter D50 of 60 to 150 nm, which is measured by laser diffraction scattering;a second silicon oxide having a 50-percent particle diameter D50 of 10 to 50 nm, which is measured by laser diffraction scattering;at least one selected from the group consisting of carboxylic acid and alpha-amino acid;a corrosion inhibitor;a surfactant;an oxidant;and water.
19
The polishing composition according to any one of claims 16 to 18, characterized in that the total of the content of the first silicon oxide and the content of the second silicon oxide, in the polishing composition, is 0.01 to 10 mass%.
20
The polishing composition according to any one of claims 16 to 19, characterized in that said corrosion inhibitor is a benzotriazole derivative represented by general formula:where R 14 represents an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those.

Independent claims12

205 paragraphs in 4 sections, as filed

BACKGROUND OF THE INVENTION

0001The present invention relates to a polishing composition to be used, for example, in polishing for forming wiring in a semiconductor device.

0002A high-integration and high-speed ultra large scale integrated circuit (ULSI) is manufactured in accordance with a fine design rule. Recently, in order to suppress an increase in wiring resistance, caused by finer wiring in a semiconductor device, a copper containing metal has been increasingly used as a wiring material.

0003Since the copper containing metal has the property of being difficult to process by anisotropic etching, wiring made of the copper containing metal is formed by the Chemical Mechanical Polishing (CMP) process in the following manner.

0004First, a barrier film made of a compound containing tantalum is provided on an insulating film having trenches. Next, a conductive film made of the copper containing metal is provided on the barrier film so as to at least fill up the trenches. Subsequently, in the first polishing process, part of the portion of the conductive film, which is positioned outside the trenches, is removed by CMP. In the second polishing process, another part of the portion of the conductive film, which is positioned outside the trenches, is removed by CMP so that the top surface of the barrier film is exposed. Finally, in the third polishing process, the residue of the portion of the conductive film, which is positioned outside the trenches, and the portion of the barrier film, which is positioned outside the trenches, are removed by CMP so that the top surface of the insulating film is exposed. Consequently, the portion of the conductive film, which is positioned in the trenches, is left on the insulating film and will act as the wiring.

0005Japanese Laid-Open Patent Publication No. 2000-160141 discloses a first conventional polishing composition, which comprises an abrasive, alpha-alanine, hydrogen peroxide, and water. Japanese Laid-Open Patent Publication No. 11-21546 discloses a second conventional polishing composition, which comprises an abrasive, an oxidant, a complexing agent, such as citric acid, and a film forming agent, such as imidazole. Japanese Laid-Open Patent Publication No. 6-313164 discloses a third conventional polishing composition, which comprises an abrasive comprising aqueous colloidal silica and a polishing accelerator comprising a persulfate. Japanese Laid-Open Patent Publication No. 2002-75927 discloses a fourth conventional polishing composition, which comprises an abrasive having a primary particle diameter of 50 to 120 nm, a compound of alpha-alanine or the like for forming a chelate with a copper ion, a film forming agent, such as benzotriazole, hydrogen peroxide, and water. The abrasive acts to mechanically polish an object to be polished. Alpha-alanine and the complexing agent act to promote polishing of an object to be polished which is made of the copper containing metal.

0006When each of the first to fourth conventional polishing compositions is used in CMP in the above second polishing process, a phenomenon called dishing occurs, where the level of the top surface of the conductive film lowers. This is thought to be attributed to removal of the conductive films to an excessive degree, due to an excessively high ability of each of the first to fourth conventional polishing compositions to polish the copper containing metal. The dishing reduces the cross sectional area of the wiring, thereby causing an increase in wiring resistance. The dishing also impairs the flatness of the surface of a semiconductor device, thereby making it difficult to form multi-filmed wiring in the semiconductor device.

SUMMARY OF THE INVENTION

0007Accordingly, it is an object of the present invention to provide a polishing composition resistant to the occurrence of the dishing when used in polishing for forming wiring in a semiconductor device.

0008To achieve the foregoing and other objectives and in accordance with the purpose of the present invention, a polishing composition is provided. The polishing composition, to be used in polishing for forming wiring in a semiconductor device, includes: a surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. The surfactant contains at least one selected from the compounds, each represented by any of general formulas (1) to (7), and the salts thereof. <chemistry id="chem0001" num="0001"><img file="EP1520892A2_D0001.tif" /></chemistry> In general formula (1), R1 represents an alkyl group having 8 to 16 carbon atoms, R2 represents a hydrogen atom, a methyl group, or an ethyl group, R3 represents an alkylene group having 1 to 8 carbon atoms, -(CH2CH2O)1-, -(CH2CH (CH3) O)m-, or a combination of at least two of those. 1 and m are integers of 1 to 8 when R3 represents - (CH2CH2O)1- or - (CH2CH(CH3)O)m-. The sum of 1 and m is 8 or less when R3 represents the combination of -(CH2CH2O)1- and -(CH2CH(CH3)O)m-. X1 represents a carboxy group or a sulfone group, R4― Z―Y1―X2 (2) R4―Z―X2 (3) In general formulas (2) and (3), R4 represents an alkyl group having 8 to 16 carbon atoms, Z is a functional group represented by chemical formula (i) or (ii), Y1 represents -(CH2CH2O)n-, -(CH2CH(CH3)O)p-, or the combination of -(CH2CH2O)n- and - (CH2CH(CH3)O)p-. n and p are integers of 1 to 6 when Y1 represents -(CH2CH2O)n- or -(CH2CH(CH3)O)p-. The sum of n and p is 6 or less when Y1 represents the combination of -(CH2CH2O)n- and - (CH2CH (CH3)O)p-. X2 represents a phosphate group or a sulfone group. <chemistry id="chem0002" num="0002"><img file="EP1520892A2_D0002.tif" /></chemistry><chemistry id="chem0003" num="0003"><img file="EP1520892A2_D0003.tif" /></chemistry><chemistry id="chem0004" num="0004"><img file="EP1520892A2_D0004.tif" /></chemistry><chemistry id="chem0005" num="0005"><img file="EP1520892A2_D0005.tif" /></chemistry><chemistry id="chem0006" num="0006"><img file="EP1520892A2_D0006.tif" /></chemistry><chemistry id="chem0007" num="0007"><img file="EP1520892A2_D0007.tif" /></chemistry> In general formulas (4) to (7), each of R5 and R6 represents a hydrogen atom, a hydroxy group, or an alkyl group having 8 to 16 carbon atoms, each of Y2 and Y3 represents -(CH2CH2O)q-, -(CH2CH(CH3)O)r-, or the combination of (CH2CH2O)q- and -(CH2CH(CH3)O)r-. q and r are integers of 1 to 6 when Y2 cr Y3 represents -(CH2CH2O)q- or -(CH2CH(CH3)O)r-. The sum of q and r is an integer of 6 or less when Y2 or Y3 represents the combination of -(CH2CH2O)q- and -(CH2CH(CH3)O)r-.

0009The present invention provides another polishing composition. The polishing composition, to be used in polishing for forming wiring in a semiconductor device, includes: alpha-amino acid; a benzotriazole derivative represented by general formula: <chemistry id="chem0008" num="0008"><img file="EP1520892A2_D0008.tif" /></chemistry> where R14 represents an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those; a silicon oxide; a surfactant; an oxidant; and water.

0010The present invention provides still another polishing composition. The polishing composition, to be used in polishing for forming wiring in a semiconductor device, includes: a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-aminn acid; a corrosion inhibitor; a surfactant; a persulfate; and water. The polishing composition further includes an aluminum ion. The pH of the polishing composition is not less than 7 and less than 12.

0011The present invention provides yet another polishing composition. The polishing composition, to be used in polishing for forming wiring in a semiconductor device, includes: a first silicon oxide having a 50-percent particle diameter D50 of 60 to 150 nm, which is measured by laser diffraction scattering; a second silicon oxide having a 50-percent particle diameter D50 of 10 to 50 nm, which is measured by laser diffraction scattering; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; a surfactant; an oxidant; and water.

0012Other aspects and advantages of the present invention will become apparent from the following description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

0013The invention, together with objects and advantages thereof, may best be understood by reference to the following description of the presently preferred embodiments together with the accompanying drawing, in which: <ul id="ul0001" list-style="none" compact="compact"><li>Fig. 1(a) to Fig. 1(d) are cross sectional views for explaining a polishing method according to one embodiment of the present invention;</li><li>Fig. 2(a) is a cross sectional view for explaining "dishing"; and</li><li>Fig. 2(b) is a cross sectional view for explaining "erosion".</li></ul>

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

0014A first embodiment of the present invention will now be described.

0015First, a method for forming wiring in a semiconductor device will be described. In forming wiring in a semiconductor device, as shown in Fig. 1(a), a barrier film 14 and a conductive film 15 are first formed on an insulating film 12 having trenches 13.

0016The insulating film 12 may be a SiO2 film, formed using tetraethoxysilane (TEOS) by the Chemical Vapor Deposition (CVD) method, a SiOF film or SiOC film. The trenches 13 are formed for example by the known lithography and pattern etching techniques so as to have a prescribed design pattern.

0017The barrier film 14 is formed on the insulating film 12 so as to cover the surface thereof in advance of formation of the conductive film 15. The barrier film 14 is formed, for example, by a sputtering method. It is preferable that the barrier film 14 have a sufficiently small thickness as compared to the depth of the trenches 13. The barrier film 14 is formed for example of tantalum or a tantalum-containing compound, such as tantalum nitride.

0018The conductive film 15 is provided on the barrier film 14 so as to at least fill up the trenches 13. The conductive film 15 is formed for example by the Physical Vapor Deposition (PVD) method. The conductive film 15 is formed for example of a copper containing metal. The copper containing metal may be copper, a copper-aluminum alloy or a copper-titanium alloy. The conductive film 15 that is formed on the insulating film 12 having the trenches 13 typically comprises, on the top surface, initial concave portions 16 to correspond to the trenches 13.

0019Next, as shown in Fig. 1(b), in the first polishing process, part of the portion of the conductive film 15, which is positioned outside the trenches 13, is removed by CMP. Subsequently, as shown in Fig. 1(c), in the second polishing process, another part of the portion of the conductive film 15, which is positioned outside the trenches 13, is removed by CMP so that the top surface of the barrier film 14 is exposed. Finally, as shown in Fig. 1(d), in the third polishing process, the residue of the portion of the conductive film 15, which is positioned outside the trenches 13, and the portion of the barrier film 14, which is positioned outside the trenches 13, arc removed by CMP so that the top surface of the insulating film 12 is exposed. Consequently, the portion of the conductive film 15 which is positioned inside the trenches 13 is left on the insulating film 12 and will act as wiring 17. The barrier film 14 serves to prevent copper in the conductive film 15 (the wiring 17) from diffusing in the insulating film 12.

0020The polishing composition according to the first embodiment is for example used in CMP in the second polishing process. This polishing composition comprises: an ingredient (a) comprising a surfactant; an ingredient (b) comprising a silicon oxide; an ingredient (c) comprising at least one selected from the group consisting of carboxylic acid and alpha-amino acid; an ingredient (d) comprising a corrosion inhibitor; an ingredient (e) comprising an oxidant; and an ingredient (f) comprising water.

0021The ingredienL (a), namely the surfactant, contains at least one selected from the compounds, each represented by any of general formulas (1) to (7), and the salt thereof. The surfactant preferably contains at least one selected from the first group consisting of compounds, each represented by any of general formulas (1) to (7), and the salt thereof, and at least one selected from the second group consisting of compounds, each represented by any of general formulas (8) and (9), and the salt thereof. <chemistry id="chem0009" num="0009"><img file="EP1520892A2_D0009.tif" /></chemistry> R4-Z-Y1-X2 (2) R4-Z-X2 (3) <chemistry id="chem0010" num="0010"><img file="EP1520892A2_D0010.tif" /></chemistry><chemistry id="chem0011" num="0011"><img file="EP1520892A2_D0011.tif" /></chemistry><chemistry id="chem0012" num="0012"><img file="EP1520892A2_D0012.tif" /></chemistry><chemistry id="chem0013" num="0013"><img file="EP1520892A2_D0013.tif" /></chemistry> R7-O-Y4-SO3H (8) <chemistry id="chem0014" num="0014"><img file="EP1520892A2_D0014.tif" /></chemistry>

0022In general formula (1), R1 represents an alkyl group having 8 to 16 carbon atoms. R2 represents a hydrogen atom, a methyl group, or an ethyl group. R3 represents an alkylene group having 1 to 8 carbon atoms, -(CH2CH2O)1-, -(CH2CH(CH3)O)m- or a combination of at least two of those. Herein, 1 and m are integers of 1 to 8 when R3 represents -(CH2CH2O)1- or -(CH2CH(CH3)O)m-, and the sum of 1 and m is 8 or less when R3 represents the combination of (CH2CH2O)1- and -(CH2CH(CH3)O)m-, namely R3 represents a group formed by removing a hydrogen atom from a copolymer of ethylene oxide and propylene oxide. X1 represents a carboxy group or a sulfone group.

0023In general formulas (2) and (3), R4 represents an alkyl group having 8 to 16 carbon atoms. Z is a functional group represented by chemical formula (i) or (ii). Y1 represents -(CH2CH2O)n-, -(CH2CH(CH3)O)p-, or the combination of -(CH2CH2C)n- and -(CH2CH(CH3)O)p-. Herein, n and p are integers of 1 to 6 when Y1 represents - (CH2CH2O)n- or -(CH2CH(CH3)O)p-, and the sum of n and p is an integer of 6 or less when Y1 represents the combination of - (CH2CH2O)n- and - (CH2CH(CH3)O)p-, namely Y1 represents a group formed by removing a hydrogen atom from a copolymer of ethylene oxide and propylene oxide. X2 represents a phosphate group or a sulfone group. <chemistry id="chem0015" num="0015"><img file="EP1520892A2_D0015.tif" /></chemistry><chemistry id="chem0016" num="0016"><img file="EP1520892A2_D0016.tif" /></chemistry>

0024In general formulas (4) to (7), each of R5 and R6 represents a hydrogen atom, a hydroxy group or an alkyl group having 8 to 16 carbon atoms. Each of Y2 and Y3 represents -(CH2CH2O)q-, -(CH2CH(CH3)O)r-, or the combination of -(CH2CH2O)q- and -(CH2CH(CH3)O)r-. Herein, q and r are integers of 1 to 6 when Y2 or Y3 represents -(CH2CH2Oq)- or -(CH2CH(CH3)O)r-, and the sum of q and r is an integer of 6 or less when Y2 or Y3 represents the combination of - (CH2CH2O)q- and -(CH2CH(CH3)O)r-.

0025In general formula (8), R7 represents an alkyl group having 8 to 16 carbon atoms. Y4 represents -(CH2CH2O)s-, -(CH2CH(CH3)O)t-, or the combination of -(CH2CH2O)s- and -(CH2CH(CH3)O)t-. Herein, s and t are integers of 2 to 30 when Y4 represents - (CH2CH2O)s- or -(CH2CH(CH3)O)t-, and the sum of s and t is an integer of 30 or less when Y4 represents the combination of - (CH2CH2O)s- and - (CH2CH(CH3)O)t-.

0026In general formula (9) , each of R8 to R13 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. Each of Y5 and Y6 represents -(CH2CH2O)u- or -(CH2CH(CH3)O)v-. Herein, u and v are integers of 1 to 20.

0027The salt of the compound represented by any of general formulas (1) to (9) may be exemplified by alkali metal salts, such as an ammonium salt and a sodium salt, and a triethanolamine salt. The compound represented by any of general formulas (1) to (8) and the salt thereof are anion surfactants. The compound represented by general formula (9) and the salt thereof are nonion surfactants.

0028As specific examples of the compound represented by general formula (1) and the salt thereof, the following can be cited: palm oil fatty acid sarcosine triethanolamine, represented by chemical formula (10); palm oil fatty acid methyltaurine sodium, represented by chemical formula (11); and polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate, represented by chemical formula (12). <chemistry id="chem0017" num="0017"><img file="EP1520892A2_D0017.tif" /></chemistry><chemistry id="chem0018" num="0018"><img file="EP1520892A2_D0018.tif" /></chemistry><chemistry id="chem0019" num="0019"><img file="EP1520892A2_D0019.tif" /></chemistry>

0029As specific examples of the compound represented by general formula (2) or (3) and the salt thereof, the following can be cited: polyoxyethylene alkyl phenyl ether phosphate, represented by chemical formula (13); and triethanolamine dodecylbenzenesulfonate, represented by chemical formula (14). <chemistry id="chem0020" num="0020"><img file="EP1520892A2_D0020.tif" /></chemistry><chemistry id="chem0021" num="0021"><img file="EP1520892A2_D0021.tif" /></chemistry>

0030As specific examples of the compound represented by any of general formulas (4) to (7) and the salt thereof, the following can be cited: polyoxyethylene alkyl sulfosuccinate disodium, represented by chemical formula (15), and dioctyl sulfosuccinate, represented by chemical formula (16). <chemistry id="chem0022" num="0022"><img file="EP1520892A2_D0022.tif" /></chemistry><chemistry id="chem0023" num="0023"><img file="EP1520892A2_D0023.tif" /></chemistry>

0031As specific example of the compound represented by general formula (8) and the salt thereof, polyoxyethylene. lauryl ether sulfate triethanolamine, represented by chemical formula (17), can be cited. C12H25-O- (CH2CH2O) 2- SO3N (C2H4OH) 3 (17)

0032As specific example of the compound represented by general formula (9) and the salt thereof, diisobutyl dimethyl butynediol polyoxyethylene glycol ether, represented by chemical formula (18), can be cited. <chemistry id="chem0024" num="0024"><img file="EP1520892A2_D0024.tif" /></chemistry>

0033A compound selected from the first group or the second group, namely a compound represented by any of general formulas (1) to (9), and the salt thereof, act to suppress the occurrence of the dishing by reducing the depth of the dishing-As shown in Fig. 2(a), the depth of the dishing is the difference "d" between the level of the top surface of the conductive film 15 left on the insulating film 12 and the level of the top surface of the part of the barrier film 14, which is positioned outside the trenches 13. As compared to the compound selected from the second group, the compound selected from the first group has a slightly stronger action to suppress the occurrence of the dishing, but has a markedly stronger action to suppress polishing of the copper containing metal. This makes it less possible to suppress polishing of the copper containing metal Loo strongly when the surfactant comprises at least one compound selected from the first group and at least one compound selected from the second group than when the surfactant comprises only at least one compound selected from the first group.

0034The content of the surfactant in the polishing composition is preferably in the range of 0.025 to 0.2 mass%, and more preferably in the range of 0.03 to 0.1 mass%. When the content of the surfactant is less than 0.025 mass%, the depth of the dishing is not largely reduced, and the occurrence of the dishing thus might not be suppressed. When the content of the surfactant is more than 0.2 mass%, polishing of the copper containing metal is suppressed too strongly, and hence the conductive film 15 to be removed might be left on the insulating film 12 after polishing.

0035When the surfactant comprises at least one compound selected from the first group and at least one compound selected from the second group, a mass ratio of the compound selected from the first group contained in the surfactant to the compound selected from the second group contained in the surfactant is preferably from one first to ten firsts (1/1 to 10/1). When the ratio is less than one first, the occurrence of the dishing might not be much suppressed. When the ratio is more than ten firsts, polishing of the copper containing metal is suppressed too strongly, and hence the conductive film 15 to be removed might be left on the insulating film 12 after polishing.

0036The ingredient (b), namely a silicon oxide, acts to mechanically polish an object to be polished. The silicon oxide may for example be colloidal silica, fumed silica, or precipitated silica. Among them, colloidal silica and fumed silica are preferable since each of them has a high ability to polish the copper containing metal, and colloidal silica is more preferable. The polishing composition may contain two kinds or more of silicon oxides.

0037The mean particle diameter DN4 of the silicon oxide, which is measured by laser diffraction scattering, is preferably in the range of 0.01 to 0.5 µm, and more preferably in the range of 0.03 to 0.3 µm. When the mean particle diameter DN4 of the silicon oxide is less than 0.01 µm, the action of the silicon oxide to mechanically polish an object to be polished is so weak that the conductive film 15 to be removed might be left on the insulating film 12 after polishing. When the mean particle diameter DN4 of the silicon oxide is more than 0.5 µm, the ability of the polishing composition to polish the copper containing metal is too high, which might cause an increase in depth of the dishing. Further, since the silicon oxide having the mean particle diameter DN4 more than 0.5 µm tends to settle out, the dispersion stability of the polishing composition might decline. Moreover, since the polishing composition has a stronger ability to polish the barrier film 14 and the insulating film 12 as well as the conductive film 15, a phenomenon called erosion might occur, where the level of the top surface of the region in which the trenches 13 are densely formed, namely the level of the top surface of the wiring region, becomes lower than the level of the top surface of the region other than the wiring region. The degree of the erosion is expressed taking the depth of the erosion as an index. As shown in Fig. 2(b), the depth of the erosion is the difference "e" between the level of the top surface of the wiring region and the level of the top surface of the region other than the wiring region. As in the case of the dishing, the erosion causes more difficulty in increasing the wiring resistance and forming multi-filmed wiring.

0038The content of the silicon oxide in the polishing composition is preferably in the range of 0.01 to 10 mass%, and more preferably in the range of 0.1 to 3 mass%. When the content of the silicon oxide is less than 0.01 mass%, the ability of the polishing composition to polish an object to be polish is insufficient, and hence the conductive film 15 to be removed might be left on the insulating film 12 after polishing. When the content of the silicon oxide is more than 10 mass%, the ability of the polishing composition to polish an object to be polished is too high, which might lead to promotion of the dishing or erosion.

0039The ingredient (c), namely at least one selected from the group consisting of carboxylic acid and alpha-amino acid, acts to form a chelate bond with copper, leading to improvement in ability of the polishing composition to polish the copper containing metal. Because especially the ability of the polishing composition to polish the copper containing metal is improved, the number of carbon atoms in the molecule of the carboxylic acid or the alpha-amino acid is preferably not more than 10. The specific examples of the carboxylic acid may include citric acid, nitric acid, succinic acid, maleic acid, and tartaric acid. Carboxylic acid may be either monocarboxylic acid or dicarboxylic acid, and may comprise an amino group or a hydroxy group. Meanwhile, the specific examples of the alpha-amino acid may include glycin, alanine, and valine. Since acting to reduce the depth of the dishing, alpha-amino acid is more preferable than carboxylic acid, and alanine is more preferable.

0040The content of the acid in the polishing composition is preferably in the range of 0.01 to 2 mass%, and more preferably in the range of 0.4 to 1.5 mass%. When the content of the acid is less than 0.01 mass%, the ability of the polishing composition to polish the copper containing metal is insufficient, and thereby the conductive film 15 to bc removed might be left on the insulating film 12 after polishing. When the content of the acid is more than 2 mass%, the concentration of the acid is too high, and thereby the ability of the polishing composition to polish the copper containing metal might decrease or the dishing might occur.

0041The ingredient (d), namely the corrosion inhibitor, acts to prevent corrosion of the surface of the conductive film 15 by protecting the copper containing metal from corrosion due to the oxidant. The corrosion inhibitor also acts to suppress the occurrence of the dishing by suppressing excessive polishing of the conductive film 15. The specific examples of the corrosion inhibitor may include the benzotriazoles represented by general, formula (19), namely benzotriazole and the derivative thereof. In general formula (19), the respective carbon atoms at positions 4, 5, 6 and 7 may be replaced with nitrogen atoms, or the nitrogen atom at position 1 may be replaced with a carbon atom. <chemistry id="chem0025" num="0025"><img file="EP1520892A2_D0025.tif" /></chemistry>

0042In general formula (19), R14 represents a hydrogen atom, an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those. R15 to R18 respectively represent a hydrogen atom or an alkyl group.

0043Strongly protecting the surface of the conductive film 15, the benzotriazole derivative, represented by general formula (20), is most preferable among the compounds represented by general formula (19). <chemistry id="chem0026" num="0026"><img file="EP1520892A2_D0026.tif" /></chemistry>

0044In general formula (20), R14 represents an alkyl group having a carbcxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those. The benzotriazole derivative, represented by general formula (20) where R14 is an alkyl group having a carboxy group, includes the compound represented by general formula (21). The specific examples of compound represented by general formula (21) may include 1-(1,2-dicarboxyethyl)benzotriazole, represented by chemical formula (22). <chemistry id="chem0027" num="0027"><img file="EP1520892A2_D0027.tif" /></chemistry><chemistry id="chem0028" num="0028"><img file="EP1520892A2_D0028.tif" /></chemistry>

0045The benzotriazole derivative, represented by general formula (20) where R14 is an alkyl group having a hydroxy group and a tert-amino group, includes the compound represented by general formula (23). The specific example of the compound represented by general formula (23) may include 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole, represented by chemical formula (24). <chemistry id="chem0029" num="0029"><img file="EP1520892A2_D0029.tif" /></chemistry><chemistry id="chem0030" num="0030"><img file="EP1520892A2_D0030.tif" /></chemistry>

0046The benzotriazole derivative, represented by general formula (20) where R14 is an alkyl group having a hydroxy group, includes the compound represented by general formula (25) and the compound represented by general formula (26). The specific examples of the compound represented by general formula (25) and the compound represented by general formula (26) may respectively include: 1-(2,3-dihydroxypropyl)benzotriazole, represented by chemical formula (27); and 1-(hydroxymethyl)benzotriazole, represented by chemical formula (28). <chemistry id="chem0031" num="0031"><img file="EP1520892A2_D0031.tif" /></chemistry><chemistry id="chem0032" num="0032"><img file="EP1520892A2_D0032.tif" /></chemistry><chemistry id="chem0033" num="0033"><img file="EP1520892A2_D0033.tif" /></chemistry><chemistry id="chem0034" num="0034"><img file="EP1520892A2_D0034.tif" /></chemistry>

0047In general formulas (21), (23), (25) and (26), Y7 represents an alkylene group.

0048The polishing composition may include two kinds or more of corrosion inhibitors. Among the corrosion inhibitors described above, 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole, represented by chemical formula (24), is most preferable since it acts particularly strongly to protect the surface of the conductive film 15.

0049The content of the corrosion inhibitor is preferably not more than 0.1 mass%. When the corrosion inhibitor is benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably in the range of 0.000001 to 0.001 mass%, and more preferably in the range of 0.00003 to 0.0005 mass%. When the corrosion inhibitor is 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole, the consent of the corrosion inhibitor in the polishing composition is preferably in the range of 0.00005 to 0.005 mass%, and more preferably in the range of 0.0001 to 0.001 mass%. When the corrosion inhibitor is 1-(2,3-dihydroxyprcpyl)benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably in the range of C.001 to 0.1 mass%, and more preferably in the range of 0.003 to 0.05 mass%. When the corrosion inhibitor is 1-(1,2-dicarboxyethyl)benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably in the range of 0.0005 to 0.01 mass%, and more preferably in the range of 0.002 to 0.008 mass%.

0050When the content of the corrosion inhibitor is too small, the action of protecting the surface of the conductive film 15 and the action of suppressing the occurrence of the dishing are insufficiently exerted, which might result in production of the roughness or promotion of the dishing on the surface of the conductive film 15 after polishing. When the content of the corrosion inhibitor is too large, the ability of the polishing composition to polish the copper containing metal is insufficient, and hence the conductive film 15 to be removed might be left on the insulating film 12 after polishing.

0051The ingredient (e), namely the oxidant, acts to promote mechanical polishing with the silicon oxide by oxidizing the copper containing metal. The oxidant may be a persulfate, such as ammonium persulfate, potassium persulfate, or sodium persulfate, periodic acid, peracetic acid, perchloric acid, ammonium percarbonate, or hydrogen peroxide. Among them, since having a high ability to oxidize copper, the persulfate is preferable, and ammonium persulfate is more preferable.

0052The content of the oxidant in the polishing composition is preferably in the range of 0.5 to 10 mass%, and more preferably in the range of 1 to 5 mass%. When the content of the oxidant is less than 0.5 mass%, the ability of the polishing composition to polish the copper containing metal is insufficient, and thereby the conductive film 15 to be removed might be left on the insulating film 12. When the content of the oxidant is more than 10 mass%, the ability of the polishing composition to polish the copper containing metal is too high, which might cause an increase in depth of the dishing.

0053The ingredient (f), namely water, serves as a solvent to dissolve or disperse the ingredients other than water in the polishing composition. Water preferably contains as few impurities as possible. Specifically, pure water, obtained by removing impurity ions with an ion-exchange resin and then contaminants through a filter, ultrapure water, or distilled water is preferable.

0054Water is added with the ingredients (a) to (e), followed by nixing, to prepare a polishing composition. In mixing, a blade-type agitator, an ultrasonic disperser or the like may be used. There is no limitation to the order of adding the ingredients (a) to (e) to water.

0055The pH of the polishing composition is preferably not less than 7, more preferably from 7 to 12, and most preferably from 8 to 10. When the pH of the polishing composition is less than 7, the ability of the polishing composition to polish the copper containing metal might decrease. When the pH of the polishing composition is more than 12, the ability of the polishing composition to polish the copper containing metal is too high, which might lead to promotion of the dishing. The pH of the polishing composition may be adjusted by addition ot ammonia to the polishing composition.

0056When CMP in the second polishing process is conducted using the polishing composition according to the first embodiment, a polishing pad is pressed onto the surface of the conductive film 15 and then rolled while the polishing composition is provided to the surface of the conductive film 15.

0057The polishing composition according to the first embodiment, can suppress the occurrence of the dishing by the actions of the surfactant and the corrosion inhibitor contained therein. Further, the ability of the polishing composition to polish the copper containing metal is improved by the actions of the oxidant and at least one selected from the group consisting of carboxylic acid and alpha-amino acid in the polishing composition.

0058Next, a second embodiment of the present invention will be described.

0059As in the case of the polishing composition according to the first embodiment, a polishing composition according to the second embodiment is also used in CMP in the second polishing process.

0060The polishing composition according to the second embodiment comprises; an ingredient (a) comprising alpha-amino acid; an ingredient (b) comprising a benzotriazole derivative; an ingredient (c) comprising a silicon oxide; an ingredient (d) comprising a surfactant; an ingredient (e) comprising an oxidant; and an ingredient (f) comprising water.

0061The ingredient (a), namely alpha-amino acid, acts to suppress the occurrence of the dishing by reducing the depth of the dishing. Alpha-amino acid also acts to form a chelate bond with copper, whereby the ability of the polishing composition to polish the copper containing metal is improved. The specific examples of the alpha-amino acid may include alanine, glycin, and valine. Among them, alanine is most preferable since it strongly acts to reduce the depth of the dishing and also has high solubility to water. The polishing composition may contain two kinds or more of alpha-amino acids.

0062The content of alpha-amino acid in the polishing composition is preferably in the range of 0.01 to 2 mass%, and more preferably from 0.4 to 1.5 mass%. When the content of the alpha-amino acid is less than 0.01 mass%, the depth of the dishing is not sufficiently reduced, and the occurrence of the dishing thus might not be suppressed. When the content of the alpha-amino acid is more than 2 mass%, the ability of the polishing composition Lo polish the copper containing metal decrease, and thereby the conductive film 15 to be removed might be left on the insulating film 12 after polishing.

0063The ingredient (b), namely the benzotriazole derivative, is represented by general formula (29). The benzotriazole derivative acts to prevent corrosion of the surface of the conductive film 15 by protecting the copper containing metal from corrosion due to the oxidant. The benzotriazole derivative also acts to suppress the occurrence of the dishing by suppressing excessive polishing cf the conductive film 15. <chemistry id="chem0035" num="0035"><img file="EP1520892A2_D0035.tif" /></chemistry>

0064In general formula (29), R represents an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino qroup, an alkyl group having a hydroxy group, or an alkyl group other than those.

0065The benzotriazole derivative, represented by general formula (29) where R is an alkyl group having a carboxy group, includes the compound represented by general formula (21). The specific example of the compound represented by general formula (21) may include 1-(1,2-dicarboxyethyl)benzotriazole, represented by chemical formula (22).

0066The benzotriazole derivative, represented by general formula (29) where R is an alkyl group having a hydroxy group and a tert-amino group, includes the compound represented by general formula (23). The specific example of the compound represented by general formula (23) may include 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole, represented by chemical formula (24).

0067The benzotriazole derivative, represented by general formula (29) where R is an alkyl group having a hydroxy group, includes the compound represented by general formula (25) and the compound represented by general formula (26). The specific examples of the compound represented by general formula (25) and the compound represented by general formula (26) may respectively include: 1-(2,3-dihydroxypropyl)benzotriazole, represented by chemical formula (27); and 1-(hydroxymethyl)benzotriazole, represented by chemical formula (28).

0068The polishing composition may comprise two kinds or more of benzotriazole derivatives. Among the benzotriazole derivatives described above, the compounds respectively represented by general formulas (21), (23), (25), and (26) are preferable since they strongly act to protect the surface of the conductive film 15.

0069The content of the benzotriazole derivative is preferably not more than 0.1 mass%. When the benzotriazole derivative is the compound represented by general formula (21), the content of the benzotriazole derivative in the polishing composition is preferably in the range of 0.0005 to 0.01 mass%, and more preferably in the range 0.002 to 0.008 mass%. When the benzotriazole derivative is the compound represented by general formula (23), the content of the benzotriazole derivative in the polishing composition is preferably in the range of 0.00005 to 0.005 mass%, and more preferably in the range of 0.0001 to 0.001 mass%. When the benzotriazole derivative is the compound represented by general formula (25) or general formula (26), the content of the benzotriazole derivative in the polishing composition is preferably in the range of 0.001 to 0.1 mass%, and more preferably in the range of 0.003 to 0.05 mass%.

0070When the content of the benzotriazole derivative is too small, the action of protecting the surface of the conductive film 15 and the action of suppressing the occurrence of the dishing are insufficiently exerted, which might result in production of the roughness or promotion of Lhe dishing on the surface of the conductive film 15 after polishing. When the content of the benzotriazole derivative is too large, the ability of the polishing composition tc polish the copper containing metal is insufficient, and thereby the conductive film 15 to be removed might be left on the insulating film 12 after polishing.

0071The ingredient (c), namely a silicon oxide, acts to mechanically polish an object to be polished. The silicon oxide may for example be colloidal silica, fumed silica, or precipitated silica. Among them, colloidal silica and fumed silica are more preferable since each of them has a high ability to polish the copper containing metal, and colloidal silica is most preferable. The polishing composition may contain two kinds or more of silicon oxides.

0072The mean particle diameter DN4 of the silicon oxide, which is measured by laser diffraction scattering, is preferably in the range of 0.01 to 0.5 µm, and more preferably in the range of 0.03 to 0.3 µm. When the mean particle diameter DN4 of the silicon oxide is less than 0.01 µm, the action of the silicon oxide to mechanically polish an object to be polished is so weak that the conductive film 15 to be removed might be left on the insulating film 12 after polishing. When the mean particle diameter DN4 of the silicon oxide is more than 0.5 µm, the ability of the polishing composition to polish the copper containing metal is too high, which might cause an increase in depth of the dishing. Further, since the silicon oxide having the mean particle diameter DN4 more than 0.5 µm tends to settle out, the dispersion stability of the polishing composition might decline. Moreover, the polishing composition has a stronger ability to polish the barrier film 14 and the insulating film 12 as well as the conductive film 15, which might promote the erosion.

0073The content of the silicon oxide in the polishing composition is preferably in the range of 0.01 to 10 mass%, and more preferably in the range of 0.1 to 3 mass%. When the content of the silicon oxide is less than 0.01 mass%, the ability of the polishing composition to polish an object to be polish is insufficient, and thereby the conductive film 15 to be removed might be left on the insulating film 12 after polishing. When the content of the silicon oxide is more than 10 mass%, the ability of the polishing composition to polish an object to be polished is too high, which might lead to promotion of the dishing or erosion.

0074The ingredient (d), namely the surfactant, acts to suppress the occurrence of the dishing by reducing the depth of the dishing. The specific examples of the surfactant may include: palm oil fatty acid sarcosine triethanolamine, represented by chemical formula (10); palm oil fatty acid methyltaurine sodium, represented by chemical formula (11); polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate, represented by chemical formula (12); polyoxyethylene alkyl phenyl ether phosphate, represented by chemical formula (13); triethanolamine dodecylbcnzenesulfonate, represented by chemical formula (14); polyoxyethylene alkyl sulfosuccinate disodium, represented by chemical formula (15); dioctyl sulfosuccinate, represented by chemical formula (16); polyoxyethylene lauryl ethereal sulfate triethanolamine, represented by chemical formula (17); and diisobutyl dimethyl butynediol polyoxyethylene glycol ether, represented by chemical formula (18).

0075The content of the surfactant in the polishing composition is preferably in the range of 0.025 to 0.2 mass%, and more preferably in the range of 0.03 to 0.1 mass%. When the content of the surfactant is less than 0.025 mass%, the depth of the dishing is not largely reduced, and the occurrence of the dishing thus might not be suppressed. When the content of the surfactant is more than 0.2 mass%, polishing of the copper containing metal is suppressed Loo strongly, and thereby the conductive film 15 to be removed might be left on the insulating film 12 after polishing.

0076The ingredient (e), namely the oxidant, acts to promote mechanical polishing with the silicon oxide by oxidizing the copper containing metal. The oxidant may be a persulfate, such as ammonium persulfate, potassium persulfate, or sodium persulfate, periodic acid, peracetic acid, perchloric acid, ammonium percarbonate or hydrogen peroxide. Among them, since having a high ability to oxidize copper, the persulfate is preferable, and ammonium persulfate is more preferable.

0077The content of the oxidant in the polishing composition is preferably in the range of 0.5 to 10 mass%, and more preferably in the range of 1 to 5 mass%. When the content of the oxidant is less than 0.5 mass%, the ability of the polishing composition to polish the copper containing metal is insufficient, and thereby the conductive film 15 to be removed might be left on the insulating film 12. When the content of the oxidant is more than 10 mass%, the ability of the polishing composition to polish the copper containing metal is too high, which might cause an increase in depth of the dishing.

0078The ingredient (f), namely water, serves as a solvent to dissolve or disperse the ingredients other than water in the polishing composition. Water preferably contains as few impurities as possible. Specifically, pure water, obtained by removing impurity ions with an ion-exchange resin and then contaminants through a filter, ultrapure water, or distilled water is preferable.

0079Water is added with the ingredients (a) to (e), followed by mixing, to prepare a polishing composition. In mixing, a blade-type agitator, an ultrasonic disperser or the like may be used. There is no limitation to the order of adding the ingredients (a) to (e) to water.

0080The pH of the polishing composition is preferably not less than 7, more preferably from 7 to 12, and most preferably from 8 to 10. When the pH of the polishing composition is less than 7, the ability of the polishing composition to polish the copper containing metal might decrease. When the pH of the polishing composition is more than 12, the ability of the polishing composition to polish the copper containing metal is too high, which might lead to promotion of the dishing. The pH of the polishing composition may be adjusted by addition of ammonia to the polishing composition.

0081When performing chemical mechanical polishing of the second polishing process using the polishing composition according to the second embodiment, the polishing pad is pressed against the surface of the conductive film 15 while polishing composition is supplied to the surface of the conductive film 15, and rotated.

0082In the polishing composition according to the second embodiment, the occurrence of dishing is suppressed due to the action of the alpha-amino acid, benzotriazol derivative, and surfactant of the polishing composition. In addition, the capability of the polishing composition to polish the copper containing metal improves due to the action of the alpha-amino acid and oxidant in the polishing composition.

0083A third embodiment according to the present invention will now be described.

0084The polishing composition according to the third embodiment is also used in the chemical mechanical polishing of the second polishing process, same as the polishing compositions according to the first and second embodiments.

0085The polishing composition according to the third embodiment comprises; an ingredient (a) comprising a silicon oxide; an ingredient (b) comprising at least one selected from the group consisting of carboxylic acid and alpha-amino acid; an ingredient (c) comprising a corrosion inhibitor; an ingredient (d) comprising a surfactant; an ingredient (e) comprising a persulfate; and an ingredient (f) comprising water. The polishing composition further comprises ammonium ion.

0086Ingredient (a), namely silicon oxide, acts to mechanically polish the surface to be polished. Specific examples of silicon oxide include colloidal silica, fumed silica, and precipitated silica. Among these, colloidal silica or fumed silica is preferred because of their high capability to polish the copper containing metal. The polishing composition may contain two or more types of silicon oxide.

0087The mean particle diameter DN4 of the silicon oxide, which is measured by laser diffraction scattering, is preferably 0.01 to 0.5 µm, and more preferably 0.03 to 0.3 µm. When the mean particle diameter DN4 of the silicon oxide is less than 0.01 µm, the silicon oxide action to mechanically polish an object to be polished is so weak, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing. When the mean particle diameter DN4 of the silicon oxide is more than 0.5 µm, the capability of the polishing composition to polish the copper containing metal is too high, whereby there is a risk of the dishing depth increasing. Further, silicon oxide having a mean particle diameter DN4 of more than 0.5 µm precipitates more easily, whereby there is the risk that the dispersion slability of the polishing composition deteriorates. Still further, because the capability increases for the polishing composition to polish not only the conductive film 15, but also the barrier film 14 and insulating film 12, there is the risk of erosion being accelerated.

0088The content of silicon oxide in the polishing composition is preferably 0.01 to 10 mass%, and more preferably 0.1 to 3 mass%. When the content of the silicon oxide is less than 0.01 mass%, the capability of the polishing composition to polish is insufficient, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing. When the content of silicon oxide exceeds 10 mass%, there is a risk that the occurrence of dishing and erosion is accelerated due to the capability of the polishing composition for polishing the object tc be polished being too high.

0089Ingredient (b), namely the at least one selected from the group consisting of carboxylic acid and alpha-amino acid, acts to cause a chelate bond with copper, whereby the capability of the polishing composition to polish the copper containing metal increases. To particularly increase the capability of the polishing composition to polish the copper containing metal, the number of carbon atoms that the carboxylic acid and alpha-amino acid contain in one molecule is preferably not more than 10. Specific examples of the carboxylic acid include, for example, citric acid, oxalic acid, succinic acid, maleic acid, and tartaric acid. The carboxylic acid may be either a monocarboxylic or a dicarboxylic acid, and may contain an amino group or a hydroxy group. Specific examples of the alpha-amino acid include, for example, glycine, alanine, and valine. To have an effect of reducing dishing depth, an alpha-amino acid is preferable from among carboxylic acid and alpha-amino acid, and alanine is more preferable.

0090The acid content in the polishing composition is preferably 0.01 to 2 mass%, and more preferably 0.4 to 1.5 mass%. When the acid content is less than 0.01 mass%, the capability of the polishing composition to polish the copper containing metal is insufficient, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing. When the acid content exceeds 2 mass%, acid concentration is too high, whereby there is a risk that the capability of the polishing composition to polish the copper containing metal decreases, and also a risk that the occurrence of dishing is accelerated.

0091Ingredient (c), namely a corrosion inhibitor, acts to inhibit surface corrosion of the conductive film 15 by protecting the copper containing metal from corrosion caused by persulfate. The corrosion inhibitor also acts to suppress the occurrence of dishing by suppressing the conductive film 15 from being excessively polished. Specific examples of the corrosion inhibitor include, for example, a benzotriazole represented by general formula (19). Tn general formula (19), the carbon atom on the fourth, fifth, sixth, or seventh position can be substituted by a nitrogen atom, and the nitrogen atom on the first position may be substituted by a carbon atom. The benzotriazole derivative represented by general formula (20) is preferable of the compounds represented by general formula (19), because its action to protect the surface of the conductive film 15 is strong.

0092The benzotriazole derivatives represented by general formula (20), in which R19 is an alkyl group having a carboxyl group, include the compounds represented by general formula (21). Examples of compounds represented by general formula (21) include, for example, the 1-(1,2-dicarboxyethyl)benzotriazole represented by chemical formula (22).

0093The benzotriazole derivatives represented by general formula (20), in which R14 is an alkyl group having a hydroxy group and a tertiary amino group, include the compounds represented by general formula (23). Examples of compounds represented by general formula (23) include, for example, the 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole represented by chemical formula (24).

0094The benzotriazole derivatives represented by general formula (20), in which R14 is an alkyl group having a hydroxy group, include the compounds represented by general formula (25) and the compounds represented by general formula (26). Examples of compounds represented by general formulas (25) and (26) include, for example, the 1-(2,3-dihydroxypropyl)benzotriazole represented by chemical formula (27) and 1-(hydroxymethyl)benzotriazole represented by chemical formula (28).

0095The polishing composition may comprise two types or more of a corrosion inhibitor. Among the above-described corrosion inhibitors, 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole represented by chemical formula (24) is preferable, because its action to protect the surface of the conductive film 15 from corrosion caused by acid is strong.

0096The content of the corrosion inhibitor in the polishing composition is preferably 0.1 mass% or less. When the corrosion inhibitor is benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably 0.000001 to 0.001 mass%, and more preferably 0.00003 to 0.0005 mass%. When the corrosion inhibitor is 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably 0.00005 Lo 0.005 mass%, and more preferably 0.0001 to 0.001 mass%. When the corrosion inhibitor is 1-(2,3-dihydroxypropyl)benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably 0.001 to 0.1 mass%, and more preferably 0.003 to 0.05 mass%. When the corrosion inhibitor is 1-(1,2-dicarboxyethyl) benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably 0.0005 to 0.01 mass%, and more preferably 0.002 to 0.008 mass%.

0097When the content of the corrosion inhibitor is too small, there is a risk that roughness will appear or dishing will occur on the surface of the polished conductive film 15, due to the action for protecting the surface of the conductive film 15 and the action tor suppressing the occurrence of dishing not being sufficient. When the content of the corrosion inhibitor is too much, there is a risk of the conductive film 15 which is meant to be removed remaining on the insulating film 12 after polishing, due to the capability of the polishing composition to polish the copper containing metal later not being sufficient.

0098Ingredient (d), namely a surfactant, acts to suppress the occurrence of dishing by reducing the dishing depth. Specific examples of the surfactant include, for example, palm oil fatty acid sarcosine triethanolamine represented by chemical formula (10), palm oil fatty acid methyltaurine sodium represented by chemical formula (11), polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate represented by chemical formula (12), polyoxyethylene alkylphenyl ether phosphate represented by chemical formula (13), dodecylbenzenesulfonate triethanolamine represented by chemical formula (14), polyoxyethylene alkyl sodium sulfosuccinate represented by chemical formula (15), dioctyl type succinates represented by chemical formula (16), polyoxyethylene lauryl ether sulfate triethanolamine represented by chemical formula (17) and diisobutyldimethylbutyne diol polyoxyethylene glycol ether represented by chemical formula (18).

0099The surfactant content in the polishing composition is preferably 0.025 to 0.2 mass%, and more preferably 0.03 to 0.1 mass%. When the surfactant content is less than 0.025 mass%, the dishing depth is hardly reduced, whereby there is a risk that the occurrence of dishing cannot be suppressed. When the surfactant content exceeds 0.2 mass%, polishing of the copper containing metal is too strongly suppressed, whereby there is a risk that the conductive film 1b which is meant to be removed remains on the insulating film 12 after polishing.

0100Ingredient (e), namely a persulfate, acts to accelerate mechanical polishing using silicon oxide through oxidation of the copper containing metal. The persulfate may be ammonium persulfate, potassium persulfate, or sodium persulfate. Among these, ammonium persulfate is preferable, in view of its strong capability of oxidizing copper as well as it serving as a supply source for ammonium ion.

0101The persulfate content in the polishing composition is preferably 0.5 to 10 mass%, and more preferably 1 to 5 mass%. When the persulfate content is less than 0.5 mass%, there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing due to the capability of the polishing composition to polish the copper containing metal being insufficient. When the persulfate content exceeds 10 mass%, there is a risk of the dishing depth increasing due to the capability of the polishing composition to polish the copper containing metal being too high.

0102Ingredient (f), namely water, acts as a medium for dissolving or dispersing the ingredients other than water that arc in the polishing composition. The water preferably contains as little impurities as possible. Specific examples include pure water from which impurity ions were removed using an ion-exchange resin, and was then passed through a filter to remove foreign substances, ultra-pure water, or distilled water.

0103The polishing composition is prepared by adding Ingredients (a) to (e) to water, and mixing. During the mixing, a blade-type agitator or an ultrasonic dispersing apparatus can be used. The order of adding Ingredients (a) to (e) to water is not specifically limited.

0104The pH of the polishing composition is from 7 or more to less than 12, preferably from 8.5 to 11, and more preferably from 9 to 11. When the polishing composition pH is less than 7, there is a risk that the capability of the polishing composition to polish the copper containing metal is insufficient. When the polishing composition pH exceeds 12, there is a risk of the occurrence of dishing being accelerated due to the capability of the polishing composition to polish the copper containing metal being too high. The polishing composition pH may be adjusted by the addition of a pH modifier to the polishing composition. To improve pH stability of the polishing composition, the pH modifier is preferably ammonia; an ammonium salt such as ammonium carbonate, ammonium sulfate, ammonium bicarbonate, ammonium phosphate, ammonium hydrogenphosphate, ammonium lactate, ammonium citrate, and ammonium glycolate; or the hydroxide or salt of an alkali metal. Among these, ammonium salts are more preferable. The polishing composition may comprise two or more pH modifiers. The pH modifier content in the polishing composition is preferably 0.0001 to 10 mass%.

0105The ammonium ion in the polishing composition acts to increase the capability of the polishing composition to polish the copper containing metal. The ammonium ion preferably is derived from the persulfate or the pH modifier added to the polishing composition. The ammonium ion content is preferably 0.03 to 0.3 mass%, and more preferably 0.07 to 0.2 mass%.

0106When performing chemical mechanical polishing of the second polishing process using the polishing composition according to the third embodiment, the polishing pad is pressed against the surface of the conductive film 15 while supplying polishing composition to the surface of conductive film 15, and rotated.

0107In the polishing composition according to the third embodiment, the occurrence of dishing is suppressed due to the action of the at least one selected from the group consisting of carboxylic acid and alpha-amino acid, the corrosion inhibitor, and the surfactant in the polishing composition. In addition, the capability of the polishing composition to polish the copper containing metal improves due to the action of the ammonium ion in the polishing composition.

0108A fourth embodiment according to the present invention will now be described.

0109The polishing composition according to the fourth embodiment is also used in the chemical mechanical polishing of the second polishing process, same as the polishing compositions according to the first, second and third embodiments.

0110The polishing composition according to the fourth embodiment comprises an ingredient (a) which consists of a first silicon oxide; an ingredient (b) which consists of a second silicon oxide; an ingredient (c) which consists of at least one selected from the group consisting of carboxylic acid and alpha-amino acid; an ingredient (d) which consists of a corrosion inhibitor; an ingredient (e) which consists of a surfactant; an ingredient (f) which consists of an oxidant; and an ingredient (g) which consists of water.

0111Ingredient (a), namely the first silicon oxide, acts to mechanically polishing the surface to be polished, and more specifically, acts to relatively roughly polish the object to be polished. Accordingly, the conductive film 15, which is meant to be removed, can be suppressed from remaining on the insulating film 12 after polishing as a result of the improvement in the capabiliLy of the polishing composition to polish the copper containing metal. The first silicon oxide may be colloidal silica, fumed silica or precipitated silica. Among these, colloidal silica or fumed silica is preferred because of their high capability to polish the copper containing metal. The polishing composition may contain two or more types of the first silicon oxide.

0112The 50% particle diameter D50 of the first silicon oxide is from 6C to 150 nm. When the 50% of the sum of the weights of all the particles in the first silicon oxide consists of the accumulated weight of particles having a particle diameter not more than a specific size as measured by laser diffraction scallering, the specific size is the 50% particle diameter D50 of the first silicon oxide. That is, for example, when the 50% particle diameter D50 of the first silicon oxide is 60 nm, the 50% of the sum of the weights of all the particles in the first silicon oxide consists of the accumulated weight of particles having a particle diameter not more than 60 nm. When the 50% particle diameter D50 of the first silicon oxide is less than 60 nm, the first silicon oxide action for mechanically polishing the object to be polished is weak, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing. When the 50% particle diameter D50 of the first silicon oxide exceeds 150 nm, the capability of the polishing composition to polish the copper containing metal is too high, whereby there is a risk of the dishing depth and erosion depth increasing. Further, because a first silicon oxide having a 50% particle diameter D50 exceeding 150 nm precipitates more easily, there is a risk of the dispersion stability of the polishing composition deteriorating.

0113The particle distribution width of the first silicon oxide is preferably as narrow as possible. Specifically, the difference between the 75% particle diameter D75 of the first silicon oxide and the 25% particle diameter D25 of the first silicon oxide is preferably from 10 to 50 nm. When the 75% at the sum of the weights of all the particles in the first silicon oxide consists of the accumulated weight of particles having a particle diameter not more than a specific size as measured by laser diffraction scattering, the specific size is the 75% particle diameter D75 of the first silicon oxide. When the 25% of the sum of the weights of all the particles in the first silicon oxide consists of the accumulated weight of particles having a particle diameter not more than a specific size as measured by laser diffraction scattering, the specific size is the 25% particle diameter D25 of the first silicon oxide. It is not easy to prepare a first silicon oxide in which the difference between the 75% particle diameter D75 and the 25% particle diameter D25 is less than 10 nm. When the difference between the 75% particle diameter D75 and the 25% particle diameter D25 exceeds 50 nm, there is the risk that the capability of the polishing composition to polish the copper containing metal will deteriorate and that the dishing depth and erosion depth will increase. In addition, there is also the fear that scratches will develop on the object tc be polished after polishing.

0114Ingredient (b), namely the second silicon oxide, acts to mechanically polish the surface to be polished, and more specifically, acts to relatively smoothly polish the object to be polished. Accordingly, the second silicon oxide reduces dishing depth and erosion depth, and thus suppresses the occurrence of dishing and crosion, by suppressing the copper containing metal from being excessively polished. The second silicon oxide may be colloidal silica, fumed silica, or precipitated silica. Among these, colloidal silica or fumed silica is preferred because of their high capability to polish the copper containing metal, and more preferred is colloidal silica. The polishing composition may contain two or more types of the second silicon oxide.

0115The 50% particle diameter D50 of the second silicon oxide is from 10 to 50 nm. When the 50% particle diameter D50 of the second silicon oxide is less than 10 nm, the second silicon oxide action for mechanically polishing the object to be polished is weak, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing. When the 50% particle diameter D50 of the second silicon oxide exceeds 50 nm, the action of the second silicon oxide for mechanically polishing the object to be polished is too high, whereby there is a risk of the occurrence of dishing and erosion being accelerated.

0116The particle distribution width of the second silicon oxide is, in the same manner as that of the first silicon oxide, preferably as narrow as possible. Specifically, the difference between the 75%. particle diameter D75 of the second silicon oxide and the 25% particle diameter D25 of the second silicon oxide is preferably from 10 to 50 nm. It is not easy to prepare a second silicon oxide in which the difference between the 75% particle diameter D75 and the 25% particle diameter D25 is less than 10 nm. When the difference between the 75% particle diameter D75 and the 25% particle diameter D25 exceeds 50 nm, there is the risk that the capability of the polishing composition to polish the copper containing metal will deteriorate and that the dishing depth and erosion depth will increase.

0117To effectively suppress the occurrence of dishing and erosion, and to also improve the ability of the polishing composition to polish the copper containing metal, when the value of the 50% particle diameter D50 of the first silicon oxide is relatively large, for example when it is 100 nm or more to 150 nm or less, the value of the 50% particle diameter D50 of the second silicon oxide is preferably relatively small, for example 10 nm or more to 30 nm or less. In the same manner, when the value of the 50% particle diameter D50 of the first silicon oxide is relatively small, for example when it is 60 nm or more to 100 nm or less, the value of the 50% particle diameter D50 of the second silicon oxide is preferably relatively large, for example 30 nm or more to 50 nm or less. However, a relatively small value of the 50% particle diameter D50 of the first silicon oxide and a relatively large value of the 50% particle diameter D50 of the second silicon oxide is preferable.

0118The total of the first silicon oxide content and the second silicon oxide content in the polishing composition is preferably 0.01 to 10 mass%, and more preferably 0.1 to 3 mass%. When the total silicon oxide content is less than 0.01 mass%, the capability of the polishing composition to polish is insufficient, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing. When the total silicon oxide content exceeds 10 mass%, there is the risk that the occurrence of dishing and erosion is accelerated due to the capability of the polishing composition for polishing the object to be polished being too high.

0119The ratio of the difference between the content of the first silicon oxide in the polishing composition and the content of the second silicon oxide in the polishing composition is determined as appropriate. For example, if more effective suppression of the occurrence of dishing and erosion is desired, the ratio of the second silicon oxide can be set to be high, while if more effective improvement in the polishing capability of the polishing composition is desired, the ratio of the first silicon oxide can be set to be high.

0120Ingredient (c), namely the at least one selected from the group consisting of carboxylic acid and alpha-amino acid, acts to cause a chelate bond with copper, whereby the capability of the polishing composition to polish the copper containing metal increases. To particularly increase the capability of the polishing composition to polish the copper containing metal, the number of carbon atoms that the carboxylic acid and alpha-amino acid contain in one molecule is preferably not more than 10. Specific examples of the carboxylic acid include, for example, citric acid, oxalic acid, succinic acid, maleic acid, and tartaric acid. The carboxylic acid may be either a monocarboxylic or a dicarboxylic acid, and may contain an amino group or a hydroxy group. Specific examples of the alpha-amino acid include, for example, glycine, alanine, and valine. To obtain an effect of reducing dishing depth, an alpha-amino acid is preferable from among carboxylic acid and alpha-amino aci.d, and alanine is more preferable.

0121The acid content in the polishing composition is preferably 0.01 to 2 mass%, and more preferably 0.4 to 1.5 mass%. When the acid content is less than 0.01 mass%, the capability of the polishing composition to polish the copper containing metal is insufficient, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing. When the acid content exceeds 2 mass%, the acid concentration is too high, whereby there is a risk that the capability of the polishing composition to polish the copper containing metal decreases and also a risk that the occurrence of dishing is accelerated.

0122Ingredient (d), namely a corrosion inhibitor, acts to inhibit surface corrosion of the conductive film 15 by protecting the copper containing metal from corrosion caused by an oxidant. The corrosion inhibitor also acts to suppress the occurrence of dishing by suppressing the conductive film 15 from being excessively polished. Specific examples of the corrosion inhibitor include, for example, a benzotriazole represented by general formula (19). In general formula (19), the carbon atom on the fourth, fifth, sixth, or seventh position can be substituted by a nitrogen atom, and the nitrogen atom on the first position may be substituted by a carbon atom. The benzotriazole derivative represented by general formula (20) is preferable of the compounds represented by general formula (19), because its action to protect the surface of the conductive film 15 is strong.

0123The benzotriazole derivatives represented by general formula (20), in which R14 is an alkyl group having a carboxyl group, include the compounds represented by general formula (21). Examples of compounds represented by general formula (21) include, for example, the 1-(1,2-dicarboxyethyl) benzotriazole represented by chemical formula (22).

0124The benzotriazole derivatives represented by general formula (20), in which R14 is an alkyl group having a hydroxy group and a tertiary amino group, include the compounds represented by general formula (23). Examples of compounds represented by general formula (23) include, for example, the 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole represented by chemical formula (24).

0125The benzotriazole derivatives represented by general formula (20), in which R14 is an alkyl group having a hydroxy group, induce the compounds represented by general formula (25) and the compounds represented by general formula (26). Examples of compounds represented by general formulas (25) and (26) include, for example, the 1-(2,3-dihydroxypropyl)benzotriazole represented by chemical formula (27) and the 1-(hydroxymethyl)benzotriazole represented by chemical formula (28).

0126The polishing composition may comprise two types or more of the corrosion inhibitor. In the above-described corrosion inhibitor, 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole represented by chemical formula (24) is preferable, because its action to protect the surface of the conductive film 15 from corrosion caused by acid is strong.

0127The content of the corrosion inhibitor in the polishing composition is preferably 0.1 mass% or less. When the corrosion inhibitor is a benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably 0.000001 to 0.001 mass%, and more preferably 0.00003 to 0.0005 mass%. When the corrosion inhibitor is 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably 0.00005 to 0.005 mass%, and more preferably 0.0001 to 0.001 mass%. When the corrosion inhibitor is 1-(2,3-dihydroxypropyl)benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably 0.001 to 0.1 mass%, and more preferably 0.003 to 0.05 mass%. When the corrosion inhibitor is 1-(1,2-dicarboxyethyl) benzotriazole, the content of the corrosion inhibitor in the polishing composition is preferably 0.0005 to 0.01 mass%, and more preferably 0.002 to 0.008 mass%.

0128When the content of the corrosion inhibitor is too small, there is a risk that roughness will appear or dishing will occur on the surface of the polished conductive film 15, due to the action for protecting the surface of the conductive film 15 and the action for suppressing the occurrence of dishing noL being sufficient. When the content of the corrosion inhibitor is too high, there is a risk of the conductive film 15 which is meant to be removed remaining on the insulating film 12 after polishing, due to the capability of the polishing composition to polish the copper containing metal later not being sufficient.

0129Ingredient (e), namely a surfactant, acts to suppress the occurrence of dishing by lowering the dishing depth. Specific examples of the surfactant include, for example, palm oil fatty acid sarcosine triethanolamine represented by chemical formula (10), palm oil fatty acid methyltaurine sodium represented by formula (11), polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate represented by chemical formula (12), polyoxyethylene alkylphenyl ether phosphate represented by chemical formula (13), dodecylbenzenesulfonate triethanolamine represented by chemical formula (14), polyoxyethylene alkyl sodium sulfosuccinate represented by chemical formula (15), dioctyl type succinates represented by chemical formula (16), polyoxyethylene lauryl ether sulfate triethanolamine represented by chemical formula (17), and diisobulyldimethylbutyne diol polyoxyethylene glycol ether represented by chemical formula (18).

0130The surfactant content in the polishing composition is preferably 0.025 to 0.7 mass%, and more preferably 0.03 to 0.1 mass%. When the surfactant content is less than 0.025 mass%, the dishing depth is hardly reduced, whereby there is a risk that the dishing occurrence cannot be suppressed. When the surfactant content exceeds 0.2 mass%, polishing of the copper containing metal is too strongly suppressed, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.

0131Ingredient (f), namely an oxidant, acts to accelerate mechanical polishing using the first and second silicon oxides through oxidation of the copper containing metal. The oxidant may be a persulfate, such as ammonium persulfate, potassium persulfate, or sodium persulfate, periodic acid, peracetic acid, perchloric acid, ammonium percarbonate, or hydrogen peroxide. Among these, a persulfate is preferable in view of its strong capability of oxidising copper, and even more preferable is ammonium persulfate.

0132The oxidant content in the polishing composition is preferably 0.5 to 10 mass%, and more preferably 1 to 5 mass%. When the oxidant content is less than 0.5 mass%, there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing due to the capability of the polishing composition to polish the copper containing metal being insufficient. When the oxidant content exceeds 10 mass%, there is a risk of the dishing depth increasing due to the capability of the polishing composition to polish the copper containing metal being too high.

0133Ingredient (g), namely water, acts as a medium for dissolving or dispersing the ingredients other than water that are in the polishing composition. The water preferably contains as little impurities as possible. Specific examples include pure water from which impurity ions were removed using an ion-exchange resin, and was then passed through a filter to remove foreign substances, ultra-pure water, or distilled water.

0134The polishing composition is prepared by adding Ingredients (a) to (f) to water, and mixing. During the mixing, a blade-type agitator or an ultrasonic dispersing apparatus can be used. The order of adding Ingredients (a) to (f) to water is not specifically limited.

0135The pH of the polishing composition is 7 or more, preferably 7 to 12, and most preferably 8 to 10. When the polishing composition pH is less than 7, there is a risk that the capability of the polishing composition to polish the copper containing metal deteriorates. When the polishing composition pH exceeds 12, there is a risk of the occurrence of dishing being accelerated due to the capability of the polishing composition to polish the copper containing metal being too high. The polishing composition pH may be adjusted by the addition of ammonia to the polishing composition.

0136When performing the chemical mechanical polishing of the second polishing process using the polishing composition according to the fourth embodiment, the polishing pad is pressed against the surface of the conductive film 15 while supplying polishing composition to the surface of conductive film 15, and rotated.

0137In the polishing composition according to the fourth embodiment, the occurrence of dishing is suppressed due to the action of the second silicon oxide, the corrosion inhibitor, and the surfactant in the polishing composition. In addition, the capability of the polishing composition to polish the copper containing metal improves due to the action of the first silicon oxide and the at least one selected from the group consisting of carboxylic acid and alpha-amino acid in the polishing composition.

0138It should be apparent to those skilled in the art that the present invention may be embodied in many other specific forms without departing from the spirit of scope of the invention. Particularly, it should be understood that the invention may be embodied in the following forms.

0139Each of the polishing compositions according to the first to fourth embodiments may further comprise, as necessary, a thickener, an antifoaming agent, or a preservative.

0140Each of the polishing compositions according to the first to fourth embodiments may be prepared by diluting the stock solution with water.

0141The polishing composition according tc the third embodiment may be prepared and stored in a state where the persulfatc is separated from the other ingredients, whereby the persulfate may be added to the other ingredients immediately before use. In such a case, the decomposition of persulfate in the polishing composition is suppressed when the polishing composition is stored for a long period of time.

0142As shown in Fig. 1(c), during the first polishing process, a part of the portion of the conductive film 15 that is located outside of the trench 13 may be removed by chemical mechanical polishing so that an upper surface of the barrier film 14 is exposed. Subsequently, as shown in Fig. 1(d), during the second polishing process, the remaining portion of the conductive film 15 that is located outside of the trench 13 and the portion of the barrier film 14 that is located outside of the trench 13 may be removed by chemical mechanical polishing so that an upper surface of the insulating film 12 is exposed. In such a case, the polishing compositions according to the first to fourth embodiments can be used in the chemical mechanical polishing of the first polishing process.

0143Examples and Comparative Examples according Lo the present invention will now be described.

0144Each ingredient shown in Table 1 was mixed with water to prepare the polishing compositions according to Examples 1 to 31 and Comparative Examples 1 to 11.

0145The measured results of the pH for each of the polishing compositions according to Examples 1 to 31 and Comparative Examples 1 to 11 are shown in Table 1.

0146The thickness of a copper blanket wafer before and after polishing was measured when a copper blanket wafer was polished in accordance with the first polishing conditions using the polishing compositions according to Examples 1 to 31 and Comparative Examples 1 to 11. Wafer thickness was measured using a sheet resistor (VR-120, manufactured by Kokusai Denki System Service K.K.). The reduction in wafer thickness as a result of the polishing was determined from wafer thickness measured before and after polishing. A polishing rate obtained by dividing the reduction in wafer thickness obtained in this way by the polishing time is shown in the "Polishing Rate" column of Table 1.

(First Polishing Conditions)

0147<ul id="ul0002" list-style="none" compact="compact"><li>Polishing machine: Polishing machine for single-sided CMP (Mirra; manufactured by Applied Materials, Inc.)</li><li>Object to be polished: Copper blanket wafer comprising a copper film formed on an 8-inch silicon wafer by an electrolytic plating method</li><li>Polishing pad: laminated polishing pad made of polyurethane (IC-1000/Suba 400, manufactured by Rodel Inc.)</li><li>Polishing pressure: 2 psi (about 13.8 kPa)</li><li>Turntable rotation speed: 60 rpm</li><li>Feed speed of polishing composition: 200 ml/min</li><li>Carrier rotation speed: 60 rpm</li><li>Polishing time: 1 minute</li></ul>

0148Copper patterned wafers were polished in accordance with the second polishing conditions using the polishing slurry "PLANERLITE-7102", manufactured by Fujimi Incorporated. Polishing was stopped when the copper film thickness of the polished copper patterned wafer had reached 70% of the copper film thickness of the copper patterned wafer prior to polishing. This process corresponds to the chemical mechanical polishing process of the first polishing process. Next, copper patterned wafers that had been subjected to the chemical mechanical polishing process of the first polishing process were polished in accordance with the first polishing conditions using the respective polishing compositions according to Examples 1 to 31 and Comparative Examples 1 to 11. Once an end point signal indicating that an upper surface of the barrier film 14 was exposed had been detected, polishing was completed after further polishing only for the extra time it took to polish the copper film to a thickness of 200 nm. This process corresponds to the chemical mechanical polishing process of the second polishing process. The dishing depth was then measured in the region in which wiring 17 had a width of 100 µm. The dishing depth was measured using the profiler HRP340 manufactured by KLA-Tencor Corporation, which is a contact-type surface measuring device. These measured results arc shown in the "Dishing Depth" column of Table 1.

0149The amount of copper containing metal that remained on the insulting film 12 of the region wherein wiring 17 was not formed was measured for the copper patterned wafers that had been subjected to the chemical mechanical polishing process of the second polishing process. The remaining amount of copper containing metal was measured using an "OPTIPHOTO 300" differential interference microscope manufactured by Nikon Corporation. Based on the remaining amount of copper containing metal measured in this manner, each polishing composition was evaluated using the four grades of excellent (ⓞ), good (○), acceptable (Δ), and poor (×). That is, cases where absolutely no copper containing metal residual could be seen were evaluated as excellent; cases where a small degree of patchy-shaped copper containing metal residue could be seen were evaluated as good; cases where patchy-shaped copper containing metal residue could be seen over the entire object were evaluated as acceptable; cases where a large amount of copper containing metal remained over the entire object to such an extenL that wiring could not be made out were evaluated as poor. These evaluation results are shown in the "Copper Containing Metal Residue Amount" column of Table 1.

(Second Polishing Conditions)

0150<ul id="ul0003" list-style="none" compact="compact"><li>Polishing machine: Polishing machine for single-sided CMP (Mirra; manufactured by Applied Materials, Inc.);</li><li>Object to be polished: Patterned wafer (854 mask pattern) comprising a copper film having a thickness of 1000 nm and initial concave portions 16 having an 800 nm depth (manufactured by SEMATECH, Inc.);</li><li>Polishing pad: laminated polishing pad made of polyurethane (IC-1400, manufactured by Rodel Inc.)</li><li>Polishing pressure: 2.0 psi (about 13.8 kPa)</li><li>Turntable rotation speed: 100 rpm</li><li>Feed speed of polishing composition: 200 ml/min</li><li>Carrier rotation speed: 100 rpm</li></ul>

0151Copper blanket wafers were polished in accordance with the first polishing conditions using both polishing compositions directly after they had been prepared, and polishing compositions that had been stored for some time after preparation in an airtight vessel. The respective polishing rate was calculated from the wafer thickness before and after polishing, whereby based on the comparison between the two calculated polishing rates, the pot life for each polishing composition was evaluated using the four grades of excellent (ⓞ), good (○), acceptable (Δ), and poor (×). That is, cases where the polishing rate achieved using a polishing composition that had been stored for two weeks or more was greater than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as excellent; cases where the polishing rate achieved using a polishing composition that had been stored for at least one week, but less than 2 weeks, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as good; cases where the polishing rate achieved using a polishing composition that had been stored for at least 3 days, but less than 1 week, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as acceptable; and cases where the polishing rate achieved using a polishing composition that had been stored for at less than 3 days, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as poor. These evaluation results are shown in the "Pot Life" column of Table 1. <tables id="tabl0001" num="0001"><img file="EP1520892A2_D0036.tif" /></tables><tables id="tabl0002" num="0002"><img file="EP1520892A2_D0037.tif" /></tables>

0152In the "Surfactant" column of Table 1: <ul id="ul0004" list-style="none" compact="compact"><li>A1 denotes palm oil fatty acid sarcosine triethanolamine;</li><li>A2 denotes palm oil fatty acid methyltaurine sodium;</li><li>A3 denotes polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate;</li><li>B1 denotes polyoxyethylene alkylphenyl ether phosphate;</li><li>B2 denotes dodecylbenzenesulfonate triethanolamine;</li><li>C1 denotes polyoxyethylene alkyl sodium sulfosuccinate;</li><li>C2 denotes sulfosuccinate;</li><li>D denotes polyoxyethylene lauryl ether sulfate triethanolamine;</li><li>E denotes diisobutyldimethylbutyne diol polyoxyethylene glycol ether; and</li><li>F denotes polyoxyethylene polyoxypropylene alkyl ether represented by chemical. formula (30) .</li></ul> HO - (CH2CH2O)w - (CH2CH (CH3) O) x - (CH2CH2O) y - H (30)

0153In chemical formula (30), the sum of w and y is 164, and x is 31.

0154In the "Silicon Oxide" column of Table 1: <ul id="ul0005" list-style="none" compact="compact"><li>CS1 is a colloidal silica having a mean particle diameter DN4 of 0.03 µm;</li><li>CS2 is a colloidal silica having a mean particle diameter DN4 of 0.05 µm;</li><li>CS3 is a colloidal silica having a mean particle diameter DN4 of 0.07 µm; and</li><li>FS3 is a fumed silica having a mean particle diameter DN4 of 0.07 µm.</li></ul>

0155The mean particle diameter DN4 of the silicon dioxide was measured using an N4 Plus Submicron Particle Sizer manufactured by Beckman Coulter, Inc. The total content of iron, nickel copper, chromium, zinc and calcium in a 20 mass% aqueous solution of colloidal silica was not more than 20 ppb.

0156In the "Carboxylic Acid or Alpha-amino Acid" column of Table 1: <ul id="ul0006" list-style="none" compact="compact"><li>Ala denotes alanine;</li><li>Gly denotes glycine;</li><li>Val denotes valine;</li><li>Cit denotes citric acid; and</li><li>Oxa denotes oxalic acid.</li></ul>

0157Tn the "Corrosion Inhibitor" column of Table 1: <ul id="ul0007" list-style="none" compact="compact"><li>G denotes 1-(2,3-dihydroxypropyl)benzotriazole;</li><li>H denotes 1-(N,N-bis(hydroxyethyl)aminomethyl] benzotriazole; and</li><li>I denotes 1-(1,2-dicarboxyethyl) benzotriazole.</li></ul>

0158In the "Oxidant" column of Table 1: <ul id="ul0008" list-style="none" compact="compact"><li>APS denotes ammonium persulfate; and</li><li>HPO denotes hydrogen peroxide.</li></ul>

0159As shown in Table 1, it was learned that in Examples 1 to 31 dishing depth is small and the occurrence of dishing is suppressed. It was also learned that the capability of the polishing composition according to Examples 1 to 31 to polish a copper containing metal is high.

0160The polishing compositions according to Examples 1 to 4, in which the content of a compound selected from a first group was from 0.05 to 0.1 mass%, and the polishing compositions according to Examples b to 7, in which the content of a compound selected from a second group was from 0.05 to 0.1 mass%, had a high capability to polish a copper containing metal, yet could dramatically reduce dishing depth.

0161Each ingredient shown in Table 2 was mixed with water to prepare the polishing compositions of Examples 101 to 133 and Comparative Examples 101 to 116.

0162The measured results of the pH for each of the polishing compositions according to Examples 101 to 133 and Comparative Examples 101 to 116 are shown in Table 2.

0163The thickness of a copper blanket wafer before and after polishing was measured when a copper blanket wafer was polished in accordance with the first polishing conditions using the polishing compositions according to Examples 101 to 133 and Comparative Examples 101 to 116. Wafer thickness was measured using a sheet resistor (VR-120, manufactured by Kokusai Denki System Service K.K.). The reduction in wafer thickness as a result of the polishing was determined from the wafer thickness measured before and after polishing. A polishing rate obtained by dividing the reduction in wafer thickness obtained in this way by the polishing time is shown in the "Polishing Rate" column of Table 2.

0164Copper patterned wafers were polished in accordance with the second polishing conditions using the polishing slurry "PLANERLITE-7102", manufactured by Fujimi Incorporated. Polishing was stopped when the copper film thickness of the polished copper patterned wafer had reached 70% of the copper film thickness of the copper patterned wafer prior to polishing. This process corresponds to the chemical mechanical polishing process of the first polishing process. Next, copper patterned wafers that had been subjected to the chemical mechanical polishing process of the first polishing process were polished in accordance with the first polishing conditions using the respective polishing compositions according to Examples 101 to 133 and Comparative Examples 101 to 116. Once an end point signal indicating that an upper surface of the barrier 14 was exposed had been detected, polishing was completed after further polishing only for the extra time it took to polish the copper film to a thickness of 200 nm. This process corresponds to the chemical mechanical polishing process of the second polishing process. The dishing depth was then measured in the region in which wiring 17 had a width of 100 µm. The dishing depth was measured using the profiler HRP340 manufactured by KLA-Tencor Corporation, which is a contact-type surface measuring device. These measured results are shown in the "Dishinq Depth" column of Table 2.

0165The amount of copper containing metal that remained on the insulting film 12 of the region wherein wiring 17 was not formed was measured for the copper patterned wafers that had been subjected to the chemical mechanical polishing process of the second polishing process. The remaining amount of copper containing metal was measured using a "OPTIPHOTO 300" differential interference microscope manufactured by Nikon Corporation. Based on the remaining amount of copper containing metal measured in this manner, each polishing composition was evaluated using the four grades of excellent (ⓞ), good (○), acceptable (Δ), and poor (×). That is, cases where absolutely no copper containing metal residual could be seen were evaluated as excellent; cases where a small degree of patchy-shaped copper containing metal residue could be seen were evaluated as good; cases where patchy-shaped copper containing metal residue could be seen over the entire object were evaluated as good; cases where a large amount of copper containing metal remained over the entire object to such an extent that wiring could not be made out were evaluated as poor. These evaluation results are shown in the "Copper Containing Metal Residue Amount" column of Table 2.

0166Copper blanket wafers were polished in accordance with the first polishing conditions using both polishing compositions directly after they had been prepared, and polishing compositions that had been stored for some time after preparation in an airtight vessel. The respective polishing rate was calculated from the wafer thickness before and after polishing, whereby based on the comparison between the two calculated polishing rates, the pot life for each polishing composition was evaluated using the four grades of excellent (ⓞ), good (○), acceptable (Δ), and poor (×). That is, cases where the polishing rate achieved using a polishing composition that had been stored for two weeks or more was greater than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as excellent; cases where the polishing rate achieved using a polishing composition that had been stored for at least one week, but less than 2 weeks, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as good; cases where the polishing rate achieved using a polishing composition that had been stored for at least 3 days, but less than 1 week, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as acceptable; and cases where the polishing rate achieved using a polishing composition that had been stored for at less than 3 days, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as poor. These evaluation results are shown in the "Pot Life" column of Table 2. <tables id="tabl0003" num="0003"><img file="EP1520892A2_D0038.tif" /></tables><tables id="tabl0004" num="0004"><img file="EP1520892A2_D0039.tif" /></tables>

0167In the "Alpha-amino Acid or Polishing Accelerator in place thereof" column of Table 2: <ul id="ul0009" list-style="none" compact="compact"><li>Ala denotes alanine;</li><li>Gly denotes glycine;</li><li>Val denotes valine;</li><li>Cit denotes citric acid;</li><li>LA denotes lactic acid;</li><li>Oxa denotes oxalic acid;</li><li>NA denotes nitric acid; and</li><li>SA denotes sulfuric acid.</li></ul>

0168In the "Benzotriazole Derivative or Corrosicn Inhibitor in place thereof" column of Table 2: <ul id="ul0010" list-style="none" compact="compact"><li>G denotes 1-(2,3-dihydroxypropyl)benzotriazcle;</li><li>H denotes 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole;</li><li>I denotes 1-(1,2-dicarboxyethyl) benzotriazole; and</li><li>J denotes benzotriazole.</li></ul>

0169In the "Silicon Oxide" column of Table 2: <ul id="ul0011" list-style="none" compact="compact"><li>CS1 is a colloidal silica having a mean particle diameter DN4 of 0.03 µm;</li><li>CS2 is a colloidal silica having a mean particle diameter DN4 of 0.05 µm;</li><li>CS3 is a colloidal silica having a mean particle diameter DN4 of 0.07 µm; and</li><li>FS3 is a fumed silica having a mean particle diameter DN4 of 0.07 µm.</li></ul>

0170The mean particle diameter DN4 of the silicon dioxide was measured using an N4 Plus Submicron Particle Sizer manufactured by Beckman Coulter, Inc. The total content of iron, nickel copper, chromium, zinc and calcium in a 20 mass% aqueous solution or colloidal silica was not more than 20 ppb.

0171In the "Surfactant" column of Table 2: <ul id="ul0012" list-style="none" compact="compact"><li>A1 denotes palm oil fatty acid sarcosine triethanolamine;</li><li>A2 denotes palm oil fatty acid methyltaurine sodium;</li><li>A3 denotes polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate;</li><li>B1 denotes polyoxyethylene alkylphenyl ether phosphate;</li><li>B2 denotes dodecylbenzenesulfonate triethanolamine;</li><li>C1 denotes polyoxyethylene alkyl sodium sulfosuccinate;</li><li>C2 denotes sulfosuccinate;</li><li>D denotes polyoxyethylene lauryl ether sulfate triethanolamine; and</li><li>E denotes diisobutyldimethylbutyne diol polyoxyethylene glycol ether.</li></ul>

0172In the "oxidant" column of Table 2: <ul id="ul0013" list-style="none" compact="compact"><li>APS denotes ammonium persulfate; and</li><li>HPC denotes hydrogen peroxide.</li></ul>

0173As shown in Table 2, it was learned that in Examples 101 to 133, dishing depth is small and the occurrence of dishing is suppressed. It was also learned that the capability of the polishing composition according to Examples 101 to 133 to polish a copper containing metal is high.

0174The polishing compositions according to Examples 1 to 5, in which the content of alpha-amino acid was from 0.5 to 1.5 mass%, had a high capability to polish a copper containing metal, yet could dramatically reduce dishing depth. The polishing compositions according to Examples 6 to 8, in which the content of benzotriazole derivative was from 0.005 to 0.02 mass%, could dramatically reduce dishing depth.

0175Each ingredient shown in Table 3 was mixed with water to prepare the polishing compositions of Examples 201 to 235 and Comparative Examples 201 to 214. A pH modifier was added to each polishing composition in just the amount to adjust the pH for the polishing compositions to the values shown in Table 3. A mixture of sodium hydroxide and 0.03 mass% ammonia was added as the pH modifier to the polishing composition of Example 214. A mixture of sodium hydroxide and 0.5 mass% ammonium carbonate was added as the pH modifier to the polishing composition of Example 215.

0176The thickness of a copper blanket wafer before and after polishing was measured when a copper blanket wafer was polished in accordance with the first polishing conditions using the polishing compositions according to Examples 201 to 235 and Comparative Examples 201 to 214. Wafer thickness was measured using a sheet resistor (VR-120, manufactured by Kokusai Denki System Service K.K.). The reduction in wafer thickness as a result of the polishing was determined from the wafer thickness measured before and after polishing. A polishing rate obtained by dividing the reduction in wafer thickness obtained in this way by the polishing time is shown in the "Polishing Rate" column of Table 3.

0177Copper patterned wafers were polished in accordance with the second polishing conditions using the polishing slurry "PLANERLITE-7102", manufactured by Fujimi Incorporated. Polishing was stopped when the cooper film thickness of the polished copper patterned wafer had reached 70% of the copper film thickness of the copper patterned wafer prior to polishing. This process corresponds to the chemical mechanical polishing process of the first polishing process. Next, copper patterned wafers that had been subjected to the chemical mechanical polishing process of the first polishing process were polished in accordance with the first polishing conditions using the respective polishing compositions according to Examples 201 to 235 and Comparative Examples 201 to 214. Once an end point signal indicating that an upper surface of the barrier 14 was exposed had been detected, polishing was completed after further polishing only for the extra time it took Lo polish the copper film to a thickness of 200 nm. This process corresponds to the chemical mechanical polishing process of the second polishing process. The dishing depth was then measured in the region in which wiring 17 had a width of 100 µm. The dishing depth was measured using the profiler HRP340 manufactured by KLA-Tencor Corporation, which is a contact-type surface measuring device. These measured results are shown in the "Dishing Depth" column of Table 3. The "-" (hyphens) in this column indicates that measurement of the dishing depth was impossible because the wafer had not been polished.

0178The amount of copper containing metal that remained on the insulting film 12 of the region wherein wiring 17 was not formed was measured for the copper patterned wafers that had been subjected to the chemical mechanical polishing process of the second pclishing process. The remaining amount of copper containing metal was measured using an "OPTIPHOTO 300" differential interference microscope manufactured by Nikon Corporation. Based on the remaining amount of copper containing metal measured in this manner, each polishing composition was evaluated using the four grades of excellent (ⓞ), good (○), acceptable (Δ), and poor (×). That is, cases where absolutely no copper containing metal residual could be seen were evaluated as excellent; cases where a small degree of patchy-shaped copper containing metal residue could be seen were evaluated as good; cases where patchy-shaped copper containing metal residue could be seen over the entire.object were evaluated as good; cases where a large amount of copper containing metal remained over the entire object to such an extent that wiring could not be made out were evaluated as poor. These evaluation results are shown in the "Copper Containing Metal Residue Amount" column of Table 3.

0179Copper blanket wafers were polished in accordance with the first polishing conditions using both polishing compositions directly after they had been prepared, and polishing compositions that had been stored for some time after preparation in an airtight vessel. The respective polishing rate was calculated from the wafer thickness before and after polishing, whereby based on the comparison between the two calculated polishing rates, the put life for each polishing composition was evaluated using the four grades of excellent. (ⓞ), good (○), acceptable (Δ), and poor (×). That is, cases where the polishing rate achieved using a polishing composition that had been stored for two weeks or more was greater than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as excellent; cases where the polishing rate achieved using a polishing composition that had been stored for at least one week, but less than 2 weeks, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as good; cases where the polishing rate achieved using a polishing composition that had been stored for at least 3 days, but less than 1 week, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as acceptable; and cases where the polishing rate achieved using a polishing composition that had been stored for at less than 3 days, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as poor. These evaluation results are shown in the "Pot Life" column of Table 3. <tables id="tabl0005" num="0005"><img file="EP1520892A2_D0040.tif" /></tables><tables id="tabl0006" num="0006"><img file="EP1520892A2_D0041.tif" /></tables>

0180In the "Silicon Oxide" column of Table 3: <ul id="ul0014" list-style="none" compact="compact"><li>CS1 is a colloidal silica having a mean particle diameter DN4 of 0.03 µm;</li><li>CS2 is a colloidal silica having a mean particle diameter DN4 of 0.05 µm;</li><li>CS3 is a colloidal silica having a mean particle diameter DN4 of 0.07 µm; and</li><li>FS3 is a fumed silica having a mean particle diameter DN4 of 0.07 µm.</li></ul>

0181The mean particle diameter DN4 of the silicon dioxide was measured using an N4 Plus Submicron Particle Sizer manufactured by Beckman Coulter, Inc. The total content of iron, nickel copper, chromium, zinc and calcium in a 20 mass% aqueous solution of colloidal silica was not more than 20 ppb.

0182In the "Carboxylic Acid or Alpha-amino Acid" column of Table 3: <ul id="ul0015" list-style="none" compact="compact"><li>Ala denotes alanine;</li><li>Gly denotes glycine;</li><li>Val denotes valine;</li><li>Cit denotes citric acid; and</li><li>Oxa denotes oxalic acid.</li></ul>

0183In the "Corrosion Inhibitor" column of Table 3: <ul id="ul0016" list-style="none" compact="compact"><li>G denotes 1-(2,3-dihydroxypropyl) benzotriazoles</li><li>H denotes 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole; and</li><li>I denotes 1-(1,2-dicarboxyethyl) benzotriazole.</li></ul>

0184In the "Surfactant" column of Table 3: <ul id="ul0017" list-style="none" compact="compact"><li>A1 denotes palm oil fatty acid sarcosine triethanolamine;</li><li>A2 denotes palm oil fatty acid methyltaurine sodium;</li><li>A3 denotes polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate;</li><li>B1 denotes polyoxyethylene alkylphenyl ether phosphate;</li><li>B2 denotes dodecylbenzenesulfonate triethanolamine;</li><li>C1 denotes polyoxyethylene alkyl sodium sulfosuccinate;</li><li>C2 denotes sulfosuccinate;</li><li>D1 denotes polyoxyethylene lauryl ether sulfate triethanolamine; and</li><li>E denotes diisobutyldimethylbutyne diol polyoxyethylene glycol ether.</li></ul>

0185In the "Persulfate or Oxidant in place thereof" column of Table 3: <ul id="ul0018" list-style="none" compact="compact"><li>APS denotes ammonium persulfate;</li><li>KPS denotes potassium persulfate;</li><li>NPS denotes sodium persulfate;</li><li>PIA denotes periodic acid;</li><li>PAA denotes pcracetic acid; and</li><li>PCA denotes perchloric acid.</li></ul>

0186As shown in Table 3, it was learned that in Examples 201 to 235, dishing depth is small and the occurrence of dishing is suppressed. It was also learned that the capability of the polishinq composition according to Examples 201 to 235 to polish a copper containing metal is high.

0187Each ingredient shown in Table 4 was mixed with water to prepare the polishing compositions of Examples 301 to 313 and Comparative Examples 301 to 315. The pH for each polishing composition was adjusted to pH 9.5 by adding sodium hydroxide.

0188The thickness of a copper blanket wafer before and after polishing was measured when a copper blanket wafer was polished in accordance with the first polishing conditions using the polishing compositions according to Examples 301 to 313 and Comparative Examples 301 to 315. Wafer thickness was measured using a sheet resistor (VR-120, manufactured by Kokusai Denki System Service K.K.). The reduction in wafer thickness as a result of the polishing was determined from the wafer thickness measured before and after polishing. A polishing rate obtained by dividing the reduction in wafer thickness obtained in this way by the polishing time is shown in the "Polishing Rate" column of Table 4.

0189Copper patterned wafers were polished in accordance with the second polishing conditions using the polishing slurry "PLANERLITE-7102", manufactured by Fujimi Incorporated. Polishing was stopped when the copper film thickness of the polished copper patterned wafer had reached 70% of the copper film thickness of the copper patterned wafer prior to polishing. This process corresponds to the chemical mechanical polishing process of the first polishing process. Next, copper patterned wafers that had been subjected to the chemical mechanical polishing process of the first polishing process were polished in accordance with the first polishing conditions using the respective polishing compositions according to Examples 301 to 313 and Comparative Examples 301 to 315. Once an end point signal indicating that an upper surface of the barrier 14 was exposed had been detected, polishing was completed after further polishing only for the extra time it took to polish the copper film to a thickness of 200 nm. This process corresponds to the chemical mechanical polishing process of the second polishing process. The dishing depth d was then measured in the region in which wiring 17 had a width of 100 µm. The dishing depth was measured using the profiler HRP340 manufactured by KLA-Tencor Corporation, which is a contact-type surface measuring device. These measured results are shown in the "Dishing Depth" column of Table 4.

0190The amount of copper containing metal that remained on the insulting film 12 of the region wherein wiring 17 was not forned was measured for the copper patterned waters that had been subjected to the chemical mechanical polishing process of the second polishing process. The remaining amount of copper containing metal was measured using an "OPTIPHOTO 300" differential interference microscope manufactured by Nikon Corporation. Based on the remaining amount of copper containing metal measured in this manner, each polishing composition was evaluated using the four grades of excellent (ⓞ), good (○), acceptable (Δ), and poor (×). That is, cases where absolutely no copper containing metal residual could be seen were evaluated as excellent; cases where a small degree of patchy-shaped copper containing metal residue could be seen were evaluated as good; cases where patchy-shaped copper containing metal residue could be seen over the entire object were evaluated as good; cases where a large amount of copper containing metal remained over the entire object to such an extent that wiring could not be made out were evaluated as poor. These evaluation results are shown in the "Copper Containing Metal Residue Amount" column of Table 4.

0191Copper blanket wafers were polished in accordance with the first polishing conditions using both polishing compositions directly after they had been prepared, and polishing compositions that had been stored for some time after preparation in an airtight vessel. The respective polishing rate was calculated from the wafer thickness before and after polishing, whereby based on the comparison between the two calculated polishing rates, the pot life for each polishing composition was evaluated using the four grades of excellent (ⓞ), good (○), acceptable (Δ), and poor (×). That is, cases where the polishing rate achieved using a polishing composition that had been stored for two weeks or more was greater than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as excellent; cases where the polishing rate achieved using a polishing composition that had been stored for at least one week, but less than 2 weeks, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as good; cases where the polishing rate achieved using a polishing composition that had been stored for at least 3 days, but less than 1 week, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as acceptable; and cases where the polishing rate achieved using a polishing composition that had been stored for at less than 3 days, was less than 90% of the polishing rate achieved using a polishing composition directly after being prepared were evaluated as poor. These evaluation results are shown in the "Pot Life" column of Table 4. <tables id="tabl0007" num="0007"><img file="EP1520892A2_D0042.tif" /></tables><tables id="tabl0008" num="0008"><img file="EP1520892A2_D0043.tif" /></tables>

0192In the "First Silicon Oxide" column and "Second Silicon Oxide" column of Table 4: <ul id="ul0019" list-style="none" compact="compact"><li>CS0 is a colloidal silica wherein the 25% particle diameter D25 is 10 nm, the 50% particle diameter D50 is 20 nm, and the 75% particle diameter D75 is 33 nm;</li><li>CS1 is a colloidal silica wherein the 25% particle diameter D25 is 15 nm, the 50% particle diameter D50 is 30 nm, and the 75% particle diameter D75 is 50 nm;</li><li>CS2 is a colloidal silica wherein the 25% particle diameter D2b is 20 nm, the 50% particle diameter D50 is 50 nm, and the 75% particle diameter D75 is 72 nm;</li><li>CS3 is a colloidal silica wherein the 25% particle diameter D2b is 48 nm, the 50% particle diameter D50 is 70 nm, and the 75% particle diameter D75 is 95 nm; and</li><li>CS4 is a colloidal silica wherein the 25% particle diameter D25 is 120 nm, the 50% particle diameter D50 is 16C nm and the 75% particle diameter D75 is 200 nm.</li></ul>

0193The 25% particle diameter D25, 50% particle diameter D50, and 75% particle diameter D75 of the silicon dioxide were based on particle size distribution as measured using an N4 Plus Submicron Particle Sizer manufactured by Beckman Coulter, Inc. The total content of iron, nickel copper, chromium, zinc and calcium in a 20 mass% aqueous solution of colloidal silica was not more than 20 ppb.

0194In the "Carboxylic Acid or Alpha-amino Acid" column of Table 4, Ala denotes alanine.

0195In the "Corrosion Inhibitor" column of Table 4, G denotes 1-(2,3-dihydroxypropyl)benzotriazole.

0196In the "Surfactant" column of Table 4: <ul id="ul0020" list-style="none" compact="compact"><li>A denotes palm oil fatty acid sarcosine triethanolamine; and</li><li>D denotes polyoxyethylene lauryl ether sulfate triethanolamine.</li></ul>

0197In the "oxidant" cclumn of Table 4, APS denotes ammonium persulfate.

0198As shown in Table 4, it was learned that in Examples 301 to 313, dishing depth is small and the occurrence of dishing is suppressed. It was also learned that the capability of the polishing composition according to Examples 301 to 313 to polish a copper containing metal is high..

0199The polishing compositions of Examples 308 to 312, wherein the content ratio of the second silicon oxide to the first silicon oxide was more than 0.25 and less than 4, could especially dramatically reduce dishing depth. On the other hand, the polishing compositions of Comparative Examples 308 to 312 had a polishing rate of 500 nm/minute or less, wherein the capability to polish a copper containing metal was low. Further, in the Comparative Examples 309 to 315, the dishing depth was a large 35 nm or more, whereby the occurrence of dishing could not be suppressed.

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Document	Relation	Office	Cited during
EP1965417A1	Cited by	European Patent Office (EPO)	Search report
EP1965417A4	Cited by	European Patent Office (EPO)	Search report
US9263296B2	Cited by	United States of America	Applicant
EP2348080A1	Cited by	European Patent Office (EPO)	Search report
EP2663604A4	Cited by	European Patent Office (EPO)	Search report
US8703007B2	Cited by	United States of America	Applicant
EP1879973B1	Cited by	European Patent Office (EPO)	Examiner
WO2012127399A1	Cited by	World Intellectual Property Organization (WIPO)	International search
JP2000160141A	Cites	Japan	Applicant
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2003342530	Japan	–	2003-09-30
2003342531	Japan	–	2003-09-30
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2003342531	Japan	A	2003-09-30
2003352952	Japan	–	2003-10-10
2003352952	Japan	A	2003-10-10
2003394593	Japan	–	2003-11-25
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2003396171	Japan	–	2003-11-26
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EP1520892A2This record	European Patent Office (EPO)	A2	2005-04-06
KR20050031992A	Republic of Korea	A	2005-04-06
JP2005109256A	Japan	A	2005-04-21
JP2005116987A	Japan	A	2005-04-28
SG110211A1	Singapore	A1	2005-04-28
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TW200532007A	Taiwan Province of China	A	2005-10-01
EP1520892A3	European Patent Office (EPO)	A3	2006-06-21
CN101177592A	China	A	2008-05-14
CN101186784A	China	A	2008-05-28
CN100393833C	China	C	2008-06-11
CN101215447A	China	A	2008-07-09
US7485162B2	United States of America	B2	2009-02-03
JP4406554B2	Japan	B2	2010-01-27
JP4608196B2	Japan	B2	2011-01-05
CN101186784B	China	B	2011-04-27
KR20110084481A	Republic of Korea	A	2011-07-25
KR20110084482A	Republic of Korea	A	2011-07-25
CN101177592B	China	B	2011-08-10
JP4759219B2	Japan	B2	2011-08-31
TWI347969B	Taiwan Province of China	B	2011-09-01
CN101215447B	China	B	2011-09-28
KR101074875B1	Republic of Korea	B1	2011-10-19
EP1520892B1	European Patent Office (EPO)	B1	2011-12-21
AT538188T	Austria	T	2012-01-15
ATE538188T1	Austria	T1	2012-01-15
EP2418259A1	European Patent Office (EPO)	A1	2012-02-15
EP2418260A1	European Patent Office (EPO)	A1	2012-02-15
KR101110707B1	Republic of Korea	B1	2012-04-16
KR101216514B1	Republic of Korea	B1	2012-12-31
EP2418259B1	European Patent Office (EPO)	B1	2013-02-13
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