EP0940976A2

Single-chip color CMOS image sensor with two or more line reading structure

Abstract

The present invention is directed to a single-chip color CMOS image sensor with a novel two or more line reading structure which is compatible with MOS fabrication technology. The invention allows the simultaneous reading of line signals from two rows of pixels so that combinations of signals from pixels in different rows may be obtained without the use of an external delay line device. The sensor includes a pixel array having superimposed thereon a color filter pattern and a two or more line reading structure. The reading structure includes sets of storage capacitors on which the pixel signals are stored, and a means for reading the signals from the capacitors in such a way that signals from pixels in different rows may be combined. The reading structure is external to the pixel array but may still be fabricated on the same CMOS chip as the pixel array. By using a high-sensitivity interlace color structure that allows complementary sets of every other row to be read during alternating even and odd fields, the sensitivity of the device as a whole can be effectively doubled.

EP0940976A2, drawing sheet 1
Sheet 1 of 31

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Term ended

Projected expiry passed 15 September 2018, 8 years ago.

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21 claims: 6 independent, 15 dependent

  1. 1
    The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:A method for reading adjacent rows of a single-chip color MOS image sensor having a pixel array of a plurality of individual pixels organized as a plurality of rows and columns, said method comprising the steps of: (a) storing the signal from each individual pixel of a first row of the pixel array on at least one memory cell associated with each said individual pixel of said first row, said at least one memory cell being external to said pixels but fabricated on the same MOS chip as the pixels;(b) storing the signal from each individual pixel of a second row on at least one memory cell associated with each of said individual pixels of said second row, said at least one memory cell being external to said pixels but fabricated on the same MOS chip as the pixels;(c) reading out the signals from two pixels, one from said first row and one from said second row, by selectively reading at least one of each of said memory cells on which each of the pixel signals was stored.
  2. 5
    A single-chip color MOS image sensor comprising:a pixel array formed from a plurality of individual pixels organized as rows and columns;and a reading structure having at least two output lines and connected to said pixel array for simultaneously reading pixels from two rows of said pixel array, said reading structure comprising: (a) a first set of storage capacitors, said first set of storage capacitors having at least one capacitor associated with each column of said pixel array;(b) a first set of switches for selectively placing signals from a first row of said pixel array on said first set of storage capacitors at an initial time, the signal from each individual pixel of said first row being stored on said at least one storage capacitor from said first set of storage capacitors associated with the column of said individual pixel at said initial time, the first set of switches also selectively placing signals from a third row of said pixel array on said first set of storage capacitors at a later time;(c) a second set of storage capacitors, said second set of storage capacitors having at least one capacitor associated with each column of said pixel array;and (d) a second set of switches for selectively placing signals from a second row of said pixel array on said second set of storage capacitors, the signal from each individual pixel of said second row being stored on said at least one storage capacitor from said second set of storage capacitors associated with the column of said individual pixel.
  3. 11
    A single-chip color MOS image sensor comprising:a pixel array formed from a plurality of individual pixels organized as rows and columns;and a reading structure having at least two output lines and connected to said pixel array for simultaneously reading pixels from two rows of said pixel array, said reading structure comprising: (a) a first set of storage capacitors, said first set of storage capacitors having at least two capacitors associated with each column of said pixel array;(b) a first set of switches for selectively placing signals from a first row of said pixel array on said first set of storage capacitors, the signal from each individual pixel of said first row being stored on said at least two storage capacitors from said first set of storage capacitors associated with the column of said individual pixel;(c) a second set of storage capacitors, said second set of storage capacitors having at least two capacitors associated with each column of said pixel array;(d) a second set of switches for selectively placing signals from a second row of said pixel array on said second set of storage capacitors, the signal from each individual pixel of said second row being stored on said at least two storage capacitors from said second set of storage capacitors associated with the column of said individual pixel;(e) a third set of switches for simultaneously reading out the signals from first and third capacitors on which the signals from first and second pixels were stored, respectively, the first capacitor being from the first set of storage capacitors and the third capacitor being from the second set of storage capacitors;and (f) a fourth set of switches for simultaneously reading out the signals from second and fourth capacitors, the second capacitor and the first capacitor being the two storage capacitors from the first set of storage capacitors on which the signal from the individual first pixel was stored.
  4. 15
    A method for reading adjacent rows of a color image sensor having a pixel array of a plurality of individual pixels organized as a plurality of rows and columns, said method comprising the steps of:(a) storing the signal from each individual pixel of a first row of the pixel array on at least one memory cell associated with each said individual pixel of said first row, said at least one memory cell being external to said pixels;(b) storing the signal from each individual pixel of an adjacent row to said first row on at least one memory cell associated with each said individual pixel of said adjacent row, said at least one memory cell being external to said pixels;(c) reading out the signals from two adjacent pixels, one from said first row and one from said adjacent row, by selectively reading at least one of each of said memory cells on which each of the pixel signals was stored.
  5. 17
    A MOS image sensor comprising:a pixel array organized into rows and columns;and a reading structure external to said pixel array and coupled to said pixel array for reading out rows of said pixel array, the reading structure comprising: (a) a reading array, said reading array including a plurality of memory cells organized as rows and columns, said reading array having approximately the same number of columns as said pixel array and also having at least two rows, and (b) a plurality of switches, the plurality of switches coupling a first row of said pixel array to a first row of said reading array so that the pixel signals from said first row of said pixel array are stored on the memory cells of said first row of said reading array, the plurality of switches also coupling a second row of said pixel array to a second row of said reading array so that the pixel signals from said second row of said pixel array are stored on the memory cells of said second row of said reading array.