ATE71476T1

Process for forming and locating buried layers.

Abstract

A method for forming vertically spaced apart regions on an integrated circuit substrate is disclosed. One or more recesses are formed in inactive regions of the substrate, while the remaining surface of the substrate remains substantially flat. When an epitaxial layer is deposited over the substrate, the recesses in the substrate causes the formation of corresponding recesses in the exposed surface of the epitaxial layer. Such recesses are useful as alignment marks in properly locating the masks used in defining active regions on the surface of the epitaxial layer.

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Projected expiry passed 4 March 2005, 21.6 years ago.

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DocumentOfficeKindDate
59067884United States of AmericaA
8500355United States of AmericaW

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US4487653AUnited States of AmericaA
WO8504134A1World Intellectual Property Organization (WIPO)A1
EP0174986A1European Patent Office (EPO)A1
JPS61501483AJapanA
EP0174986A4European Patent Office (EPO)A4
EP0174986B1European Patent Office (EPO)B1
AT71476TAustriaT
ATE71476T1This recordAustriaT1
DE3585115D1GermanyD1