ATE506705T1

Magnetic field sensor comprising a hall element

Abstract

A symmetrical vertical Hall element comprises a well of a first conductivity type that is embedded in a substrate of a second conductivity type and which is contacted by four contacts serving as current and voltage contacts. From the electrical point of view, such a Hall element with four contacts can be regarded as a resistance bridge formed by four resistors R1 to R4 of the Hall element. From the electrical point of view, the Hall element is then regarded as ideal when the four resistors R1 to R4 have the same value. The invention suggests a series of measures in order to electrically balance the resistance bridge. A first measure exists in providing at least one additional resistor. A second measure exists in locally increasing or reducing the electrical conductivity of the well. A third measure exists in providing two Hall elements that are electrically connected in parallel in such a way that their Hall voltages are equidirectional and their offset voltages are largely compensated.

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Projected expiry passed 10 September 2022, 4 years ago.

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0200497SwitzerlandW

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WO2004025742A1World Intellectual Property Organization (WIPO)A1
AU2002322971A1AustraliaA1
EP1540748A1European Patent Office (EPO)A1
KR20050088278ARepublic of KoreaA
CN1669159AChinaA
JP2005538553AJapanA
US2006011999A1United States of AmericaA1
CN100388523CChinaC
US7872322B2United States of AmericaB2
JP4624787B2JapanB2
KR101016836B1Republic of KoreaB1
EP1540748B1European Patent Office (EPO)B1
AT506705TAustriaT
ATE506705T1This recordAustriaT1
DE50215023D1GermanyD1
EP1540748B2European Patent Office (EPO)B2
EP1540748B9European Patent Office (EPO)B9