AT238244T
Transparent substrate with at least one thin silicon nitride or oxynitride based layer and process for obtaining the same
Abstract
The invention relates to a method for at least one colorant is one or oxynitriding is thin layer coated glass substrate is transparent substrate. A element, Si (N, and C according to the invention thin layer, comprising a molecular weight of: Si: 30-60%, preferably, 40-50%Comprising: 10-56%, specifically, 20-56%The 1-40%:, preferably, 5-30%C: 1-40%th, specifically 5-30%. The invention further relates to a preparation method and use, wherein the gas phase pyrolytic method for preparing.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
21 members in 12 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 9701468 | France | A |
Members21
| Document | Office | Kind | |
|---|---|---|---|
| EP0857700A1 | European Patent Office (EPO) | A1 | |
| FR2759362A1 | France | A1 | |
| PL324615A1 | Poland | A1 | |
| KR19980071238A | Republic of Korea | A | |
| JPH10309777A | Japan | A | |
| CN1201023A | China | A | |
| FR2759362B1 | France | B1 | |
| BR9800576A | Brazil | A | |
| US6114043A | United States of America | A | |
| US6503557B1 | United States of America | B1 | |
| EP0857700B1 | European Patent Office (EPO) | B1 | |
| AT238244TThis record | Austria | T | |
| ATE238244T1 | Austria | T1 | |
| DE69813648D1 | Germany | D1 | |
| PT857700E | Portugal | E | |
| ES2196507T3 | Spain | T3 | |
| DE69813648T2 | Germany | T2 | |
| CN1195694C | China | C | |
| KR100498219B1 | Republic of Korea | B1 | |
| PL191071B1 | Poland | B1 | |
| JP4777490B2 | Japan | B2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Publication of translation of european patent specificationUEP | UEP |
Numbers
- Application
- 98400180
Titles2
- German
- TRANSPARENTES SUBSTRAT MIT MINDESTENS EINER DÜNNER SCHICHT AUS SILICIUMNITRID ODER OXYNITRID UND VERFAHREN ZU DESSEN HERSTELLUNG
- English
- TRANSPARENT SUBSTRATE WITH AT LEAST ONE THIN LAYER OF SILICON-NITRIDE OR OXYNITRIDE AND METHOD FOR THE PRODUCTION THEREOF
Classification
- CPC, 14
- C03C17/3626
- C03C17/225
- C03C17/3435
- C03C17/3441
- C03C17/36
- C03C17/3649
- C03C17/366
- C03C2217/281
- C03C2217/78
- C23C16/308
- C23C16/345
- Y10T428/24942
- Y10T428/24975
- Y10T428/265
- IPC, 8
- B32B17 06
- B32B7 02
- B32B9 00
- C03C17 22
- C03C17 34
- C03C17 36
- C23C16 30
- C23C16 34