Power delivery and other systems for integrated circuits

REFERENCE TO RELATED APPLICATIONS

P-0001[0001] This application claims priority from U.S. provisional patent application, Serial No. 60,325,107, filed Sep. 26, 2001.

BACKGROUND OF THE INVENTION

P-0002[0002] The present invention generally relates to systems for integrated circuits. More particularly, the present invention relates to a power delivery system, a signal transfer system, a package design system, a thermal management system, and an electromagnetic interference (EMI) emission control system for an integrated circuit to support advancements in semiconductor technology.

P-0003[0003] I. Semiconductor Technology

P-0004[0004] Consumers demand innovative electronic products that have more functionality, better performance, smaller size, less weight, better reliability, lower cost and faster time-to-market. Semiconductor technology is the core building block for the innovative electronic products desired by consumers. Over the years, advancements in semiconductor technology have led to dramatic increases in the functionality and performance of integrated circuit (IC) devices while minimizing the size, weight, defects and cost of the IC devices.

P-0005[0005] Historically, the number of transistors that the electronic industry can place on a semiconductor chip doubles about every eighteen months. This rapid development cycle permits fast delivery of the new innovative products to the market. For example, semiconductor manufacturers took nearly thirty years to perfect microprocessor clock rates to run at 1 GHz, yet manufacturers recently reached the 2 GHz microprocessor clock rate less than eighteen months after reaching 1 GHz. Manufacturers anticipate that there are no fundamental barriers to extending the rapid advancement of semiconductor technology for another decade by building the even faster silicon transistors. These transistors are anticipated to be around 20 nanometers (nm) in size and should permit the manufacturers to build microprocessors containing a billion transistors which run at speeds approaching 20 GHz and operate at less than one volt within the next few years. These new transistors, which act like switches controlling the flow of electrons inside a microprocessor, will turn on and off more than a trillion times per second. Such advancements in semiconductor technology will result in microprocessors that have faster clock rates, higher power, lower supply voltages, higher DC currents, higher transient currents, narrower voltage margins, higher non-uniform heat densities, and higher frequency electromagnetic interference emissions. Ancillary benefits to these advancements include microprocessors that have increased interconnect densities, reduced circuit board real estate and package volume, and improved product manufacturing and reliability.

P-0006[0006] Specifications for near future microprocessors require 1.0V operating voltage, 100A current, 300A/μsec transient currents, efficiency greater than 90%, regulation within 5%, and voltage ripple less than 1%. These requirements present a significant advancement over present microprocessor designs. Microprocessors having these characteristics and requirements and future microprocessors having even more demanding characteristics and requirements will need new support systems, such as power delivery, signal transfer, packaging, thermal management, and electromagnetic interference (EMI) emission control.

P-0007[0007] II. Power Delivery

P-0008[0008] Power delivery concerns supplying power to devices that need it. Traditionally, an ideal power supply is assumed and little consideration is given to power delivery until the end of the design. Printed circuit board (PCB) designers attempt to create the ideal power delivery supply with conventional power and ground planes in the PCB and with wide, heavy traces on the PCB to distribute the power among the devices on the PCB. High frequency ceramic capacitors control high frequency noise, created by switching the transistors on and off, by shorting the high frequency noise to ground. Lower frequency bulk capacitors (such as tantalum capacitors) subsequently recharged the high frequency ceramic capacitors. Various rules of thumb exist for determining the amount of each type of capacitance that is required for various ICs.

P-0009[0009] To electrically model this power delivery system, considerations include the inductance and resistance of cables, connectors, PCB, pins, contacts and components, such as resistors and capacitors, of the receiving device(s) and power source(s). In the past, voltage drops due to inductance (V=L di/dt) and resistance (V=IR) have been nearly negligible relative to the tolerance of devices in most systems. Similarly, simple rules of thumb determine the method for decoupling the high frequency noise.

P-0010[0010] Each generation of semiconductor technology has reduced power supply voltage to support the requirements of deep sub-micron semiconductor technologies and to improve reliability. Lower power supply voltages should lower the power consumption. However, even at lower power supply voltages the power consumption of microprocessors is increasing because of more transistors, increased density of transistors on the die, thinner insulators that increase capacitance, and higher operating frequencies. Power consumption in microprocessors continues to rise as much as three times every two years while microprocessor power supply voltages approach 1.0 V. Power consumption (P) is related to the operating frequency (f), the power supply voltage (V), and the chip capacitance (C) of the microprocessor by the formula (P=CfV²). By one example, a microprocessor with a typical chip capacitance of 20 nanofarads, a power supply voltage of 1.65 volts, and an operating frequency of 1 GHz, will consume 55 watts of power (0.020×1.65×1.65×1,000). By another example, a microprocessor with a typical chip capacitance of 40 nanofarads, a power supply voltage of 1 volt, and an operating frequency of 3 GHz, will consume 120 watts (0.040×1.0×1.0×3,000).

P-0011[0011] Power consumption (P) is also related to the power supply voltage (V) and the current (I) by the formula (P=VI). This formula shows that high power consumption (P) at low power supply voltages (V) requires that high currents (I) (I=P/V) be delivered to the microprocessor. Continuing with the two examples above, the microprocessor consuming 55 watts of power and having a power supply voltage of 1.65 volts requires a supply current of 33 amps (55/1.65), and the microprocessor consuming a 120 watts of power and having a power supply voltage of 1.0 volts requires a supply current of 120 amps (120/1), representing an increase of about 3.6 times over the 33 amp microprocessor.

P-0012[0012] At these voltage and current levels, it is more difficult for a central power supply to deliver high current and low voltage power throughout a computer system because of impedance levels that cause unacceptable voltage drops along the power distribution paths. Computer systems presently use distributed power systems to route power throughout the computer system at high voltage and low current and then convert to low voltage and high current as needed by the microprocessor. Voltage regulators or modular DC/DC converters, which provide the needed low voltage, high current power, are located as close as possible on the motherboard to the microprocessor to minimize the impedances and the resulting voltage drops. The location of the power distribution path on the mother board takes up valuable space that could be used for other components.

P-0013[0013] Even with distributed power delivery systems, every part of the distribution path must still have a low impedance to minimize the resulting voltage drops. Typically, the voltage variance at the voltage regulator is less than (e.g., about one-half) of the voltage variance at the microprocessor. Traditionally, connectors with a high pin count and heavy copper power/ground planes are used to minimize the impedance. However, these solutions also consume extra printed circuit board space and add cost.

P-0014[0014] In one power distribution approach, the microprocessor and the voltage regulator each form modules and rely upon corresponding sockets to connect each module to the motherboard. The microprocessor may be mounted to an interposer board, and the motherboard has one socket that receives the voltage regulator and another socket that receives the interposer board. The microprocessor and voltage regulator are modular for fast and easy exchange for efficient-manufacturing and service. Current flows from the voltage regulator to the microprocessor over a path from the voltage regulator, through its socket, the motherboard, the interposer socket and board, the microprocessor package, and ends at the die. This relatively long path of current flow introduces impedance and voltage drops, which are not desirable for advanced microprocessor designs.

P-0015[0015] An alternative power system approach bypasses the motherboard and the microprocessor socket. In this approach, the interposer board carries the microprocessor die and the voltage regulator. Current flows from the voltage regulator to the microprocessor over a path starting from the voltage regulator, through the voltage regulator socket, the interposer board, the microprocessor package, and ending with the die. Since this approach bypasses the motherboard and the interposer socket, the path of current flow is shorter. Therefore, this approach improves the impedance and the resulting voltage drop of the relatively shorter path.

P-0016[0016] Someday it may be possible to integrate the voltage regulator into the microprocessor package, making the path of current flow very short, reducing the impedance and resulting voltage drop. However, semiconductor technology has not advanced far enough to provide this level of an integrated system.

P-0017[0017] Microprocessor response time or transient current requirement (di/dt), i.e., the rate at which the current demand changes is another power-related concern. Varying computing demands of the microprocessor requires varying current demands from the power supply. The computing demands vary because of high clock speed circuits and power conservation design techniques, such as clock gating and sleep modes. These techniques result in fast, unpredictable and large magnitude changes in supply current ultimately requiring hundreds of amps within a few nanoseconds. The resulting current surge demanded by the microprocessor from the voltage regulator can cause unacceptable voltage spikes on the power delivery voltage according to the formula (dV=IR+Ldi/dt).

P-0018[0018] Attempts have been made to manage surge currents by placing decoupling capacitors throughout the power delivery system such as on the voltage regulation module, the motherboard, the interposer PCB, the die package, and on the die itself. Decoupling capacitors are typically located on the circuit board outside the microprocessor package, typically using several discrete decoupling capacitors mounted next to the microprocessor package on the circuit board. In this approach, conductive traces on the circuit board connect the decoupling capacitors to power and ground pins on the microprocessor. In another approach, a discrete decoupling capacitor is formed as part of the IC.

P-0019[0019] These decoupling capacitors are commonly used to ensure that the power supply system can provide the microprocessor with a surge current when required. The decoupling capacitors connect power sources to the power leads of the microprocessor. The amount of decoupling capacitance needed depends on the power requirement of the microprocessor. The microprocessor is able to draw its required surge current from the power stored in the decoupling capacitors, and hence, the decoupling capacitors stabilize the power delivery system by storing power local to the microprocessor in order to meet the surge current needs of the microprocessor. However, use of discrete, broad-mounted decoupling capacitors not only increase the cost of the power delivery system, but also consume additional area on the IC or the circuit board, or elsewhere.

P-0020[0020] As the power requirement of microprocessor increases, the need for more decoupling capacitance increases, which in turn requires larger value or size decoupling capacitors and more space to accommodate them. Unfortunately, larger value or size decoupling capacitors consume more area on the circuit board.

P-0021[0021] As the switching speeds of the transistors increases, an undesirable amount of resistance due to inductance, associated with the interconnection between the semiconductor die and the decoupling capacitor, increases according to the formula (X_L=2∂fL). The longer the conductive path interconnecting the decoupling capacitor and the semiconductor die inside the microprocessor, the higher the inductance. The higher the frequency of operation of the microprocessor, the higher the resistance of the system due to the inductance, and higher resistance causes a higher voltage drop. Therefore, it is desirable to locate the decoupling capacitors as close to the semiconductor die as possible, such as by putting the decoupling capacitor inside the microprocessor package, as described above, in order to minimize the conductive path to minimize the inductance.

P-0022[0022] Further, capacitors exhibit inductance and resistance characteristics as well as capacitance characteristics and can be electrically modeled as a series RLC circuit. At higher frequencies, such as above 100 MHz, the inductance characteristic limits the effectiveness of conventional discrete decoupling capacitors. If large surge currents are required by the microprocessor, this residual inductance can cause unacceptable voltage drops and AC noise.

P-0023[0023] Historically, power has been brought to the IC through pins in the IC socket. As the power requirements of an IC increase, it will require additional pins to accommodate the power, and these additional pins increase the size of the IC package and therefore take up valuable space on the circuit board. The increase in the pin numbers also increases the amount of force required for inserting the IC into and removing it from its socket of the circuit board. The power pins are run through the same surface of the IC, typically the bottom surface, and with high densities, the power and signal pins should be isolated from each other to prevent crosstalk and noise.

P-0024[0024] Hence, there is a need for a power delivery system that delivers low voltage, narrow voltage margin, high current, and high transient current to a high performance integrated circuit, such as a microprocessor, that minimizes cost and space while improving reliability.

P-0025[0025] III. Signal Transfer

P-0026[0026] Signal integrity is a complex field of study involving digital and analog design, circuit, and transmission line theory and involves phenomenon such as cross talk, ground bounce, and power supply noise. Although signal integrity has always been important, in the past the switching speed of microprocessor transistors was so slow that digital signals actually resembled high pulses, representing ones, and low pulses, representing zeros. Electrical modeling of signal propagation was often not necessary. Unfortunately, at today's microprocessor speeds of 1 GHz and above even the simple, passive elements of a high-speed design, such as wires, PC boards, connectors, and microprocessor packages, can significantly affect the wave shape and voltage level of the signal. Further, these passive elements can cause glitches, resets, logic errors, and other problems.

P-0027[0027] Typically, a microprocessor makes contact with the motherboard using galvanic (i.e., metal-to-metal) connections such as a land grid array (LGA), ball grid array (BGA), pin grid array (PGA) and solder, to transfer signals between the microprocessor and the motherboard. As the switching speeds of the transistors increases, an undesirable amount of resistance due to inductance, associated with the conductive interconnection between the semiconductor die located inside the microprocessor and the motherboard, increases according to the formula (X_L=2∂fL). The longer the conductive path interconnecting the semiconductor die in the microprocessor to the motherboard, the higher the inductance. A higher frequency of operation of the microprocessor causes a higher resistance due to the inductance on the signal path, and this resistance causes a higher voltage drop of the signal level. Therefore, it is desirable to minimize the inductance of the signal path as the frequency of operation of the microprocessor increases. Other disadvantages of signaling via conductive contacts are disclosed in U.S. Pat. No. 5,629,838, issued May 13, 1997. An engineering tradeoff exists between increasing the desired operating frequency of the microprocessor and the signal integrity of the system.

P-0028[0028] Hence, there is a need for a system that permits the operating frequency of the microprocessor to increase without degrading the integrity of the signal. Such a system would maximize the performance and minimize the cost of interconnection technology used in high-speed digital signal designs.

P-0029[0029] IV. Integrated Circuit Package Design

P-0030[0030] Advances in semiconductor technology provide microprocessors that have higher performance and are smaller in size, which directly affects the design of the microprocessor package. Factors related to microprocessor package design include: current per contact and per socket, the number of ground and power pins, the number of signal contacts and signal contacts per square area, the contact pitch, the number of total contacts and total contacts per square area, the contact force along the Z-axis, the mated contact height, the signal bandwidth, the semiconductor die size, and other factors.

P-0031[0031] Increasing the number and power of transistors in the microprocessor typically increases current per contact and socket as well as increases the number of ground and power pins. Increasing the performance of the microprocessor will need an increase in the number of signal contacts and the semiconductor die size. Increasing both the power and performance of the microprocessor will increase the total contacts and will decrease the contact pitch. Increasing the number of total contacts while decreasing the contact pitch will increase the contact force required along the Z-axis which may require an increase in the mated contact height. Increasing the frequency of operation of the microprocessor will decrease the signal bandwidth. Hence, it should be understood that engineering tradeoffs exist among these factors in order to produce a microprocessor having an optimized package design.

P-0032[0032] V. Thermal Management

P-0033[0033] Advances in electronic packaging design provide devices with higher performance and smaller size, which lead to increased heat generation and heat density, which in turn may cause thermal management to be given higher priority in package design to maintain reliability of the device.

P-0034[0034] For microprocessors, higher performance, increased level of integration, and optimization of die size has led to higher non-uniform heat density in certain areas of the microprocessor die. Heat generation and heat density continue to increase with more advanced semiconductor technology. The reliability of a microprocessor is exponentially dependent on the operating temperature of the die junction, which depends on the power consumed by the transistor having the die junction.

P-0035[0035] Thermal management of the microprocessor is related to thermal management of the voltage regulator. Both the efficiency of the voltage regulator and the power consumed by the processor must be considered together. For example, a voltage regulator operating at 85 percent efficiency and which drives a microprocessor consuming 120 watts of power, dissipates about 18 watts of power. This power must be drawn away from the voltage regulator and microprocessor to cool the devices in order to maintain their reliability. Therefore, an engineering tradeoff exists between locating the voltage regulator near the microprocessor to minimize impedance and the resulting voltage drop, as described above, and locating the voltage regulator far from the microprocessor to minimize the heat generation and heat density.

P-0036[0036] Hence, there is a need for a thermal management solution that permits a high power microprocessor to be located near voltage regulator to minimize the impedance and resulting voltage drop while efficiently dissipating heat generation and heat density to maximize reliability.

P-0037[0037] VI. Electromagnetic Interference

P-0038[0038] Sources of electromagnetic interference (EMI) emission include the transistors within a microprocessor and signal paths on circuit boards and cables. The microprocessor is one of the largest sources of EMI in computer systems. Microprocessor clock signals have increased in frequency to 1 GHz and beyond today. At 1 GHz, these clock signals can generate harmonic frequency signals that reach 5 Ghz, and both of these signals generate EMI waves with wavelengths that are inversely proportional to the frequency of the signal (i.e., the higher the frequency, the shorter the wavelength).

P-0039[0039] Typically, a conductive shield or cover is used to control EMI. The shield is grounded to provide a dissipating path for the EMI to prevent it from interfering with other circuits. The shield usually contains holes for thermal management to create airflow to cool the device generating the EMI. However, large holes in the shield permit EMI to escape through the shield, and thus the shield holes must be sized so that the EMI does not escape, but airflow is not restricted to cool the device. High frequency signals require smaller holes in the shield for EMI containment, but the smaller holes restrict the airflow available for cooling. Hence, an engineering tradeoff exists in sizing the holes in the shield to for cooling and EMI containment purposes.

P-0040[0040] The shield may be located at the microprocessor or chassis level, or both. The microprocessor generates the high frequency harmonic signals that cause EMI, so that locating the shield close to the microprocessor may effectively contain the harmonic signals near the source of the EMI. Localized containment prevents the EMI from interfering with other circuitry in the computer system, but it also restricts the airflow needed to dissipate the microprocessor heat. Alternatively, the chassis of the computer system may be used as the shield which improves the airflow around the microprocessor but permits EMI to interfere with other circuits in the system. A chassis level solution requires small holes in the chassis for EMI blockage, but reduces airflow.

P-0041[0041] Grounding a heat sink that located near the microprocessor is another way to reduce EMI. However, EMI from the microprocessor that couples with the heat sink may cause the heat sink to act as an antenna and radiate the EMI. It is difficult to ground the heat sink through the microprocessor package, and although grounding the heat sink may reduce EMI, this solution alone may not be sufficient to pass required FCC emission tests. Additional shielding may be necessary to block the EMI. Therefore, there is a need for an EMI containment system that contains EMI from high frequency signals without compromising the thermal management of the system.

P-0042[0042] In summary, systems related to power delivery, signal transfer, package design, thermal management, and electromagnetic interference (EMI) emission control for an integrated circuit are needed to support future and current advancements in semiconductor technology.

SUMMARY OF THE INVENTION

P-0043[0043] Accordingly, it is a general object of the present invention to provide an improved power delivery system and apparatus that overcomes the aforementioned disadvantages in delivering power to an integrated circuit without occupying large amounts of space on the circuit board.

P-0044[0044] Another object of the present invention is to provide a system and apparatus for providing power to an integrated circuit by utilizing one or more capacitors that are supported by a cover or similar member that engages the integrated circuit.

P-0045[0045] A further object of the present invention is to provide a connector for an integrated circuit which incorporates a power transfer means into the body of the connector, and which is preferably capable of supplying power to the integrated circuit along the sides or top of the integrated circuit which results in a reduction of the number of conductive pins (leads) needed for the integrated circuit which, in turn, reduces the force required to insert and remove the integrated circuit from the connector, and frees up additional pins for use in signal transmission to and from the integrated circuit.

P-0046[0046] Yet another object of the present invention is to provide a power delivery member in the form of either a socket or a cover that includes a plurality of planar capacitors formed therein, the capacitors including at least two metal plates that are separated from each other by a dielectric material, preferably in the form of a film, the capacitors being further separated from each other with the power delivery member, whereby the capacitors supply a plurality of different voltages to distinct areas of the integrated circuit.

P-0047[0047] A further object of the present invention is to provide a power delivery member that integrates one or more capacitors therein and which includes a plurality of individual contact arms that extend therefrom to engage leads on an integrated circuit, the leads being disposed around the top, bottom or sides of the integrated circuit.

P-0048[0048] A further object of the present invention is to provide a processor package that takes up less space on a circuit board and which does not rely upon galvanic coupling to mate with leads on a circuit board, the package including a housing that receives the integrated circuit thereon, the housing having a dielectric plate forming a wall of the housing, the housing further having a plurality of contact pads formed on an inner surface thereof to which are terminated, leads of the integrated circuit, the dielectric plate separating the inner contact pads of the housing from contact pads disposed on an opposing surface of the circuit board, the inner contact pads of the housing being aligned with corresponding contact pads on the circuit board to provide capacitive coupling therebetween to effect signal transfer from the integrated circuit to the circuit board, the housing further having at least one capacitor supported thereby, the capacitor providing a supply of power to the integrated circuit.

P-0049[0049] Yet a still further object of the present invention is to provide a power transfer connector for use with integrated circuits, the connector taking the form of a cover member that is dimensioned to overlie an integrated circuit mounted on a circuit board, whether or not the integrated circuit is mounted within a mounting socket, the cover member including a plurality of conductive, spaced-apart capacitor plates disposed therein, the connector further having terminals extending from the capacitor plates for contacting conductive traces on the integrated circuit when the cover member is applied to an integrated circuit, the capacitor plates selectively storing power when a voltage is applied to them and selectively discharging power to the integrated circuit as needed, the capacitor plate terminals contacting the integrated circuit from either the sides or top of the integrated circuit, thereby eliminating the need for power contacts or terminals on the circuit board or in the mounting socket leading to a reduced terminal count therein and a reduction in the mounting force required for the integrated circuit.

P-0050[0050] Still another object of the present invention is to provide a system and apparatus that capacitively provides power to a microprocessor and which incorporates means for dissipating heat generated by the microprocessor during operation.

P-0051[0051] The present invention accomplishes these and other objects by means of its unique and novel structure.

P-0052[0052] The power delivery system of the present invention includes a power supply, a voltage regulator module, and decoupling capacitance in the form of discrete and/or integral capacitors. The voltage regulator module and the decoupling capacitance are each located in a connector that engages the IC. The connector may take the form of a cover, a socket, or a frame that engages the IC in a manner so that the system delivers power to one or more sides of the IC. The system may include a signal transfer system that couples signals from the IC to a remote circuit, located in the connector, on the circuit board on which the IC is located, via a conductor or a PCB trace.

P-0053[0053] The package design system of the present invention permits signals and/or power to be coupled to one or more surfaces on the IC utilizing connections that are outside, flush with, recessed or inside the semiconductor package. This package design system preferably permits the transferred signals to have different frequencies, such as high and low frequencies with different types of signal interfaces, such as conductive, capacitive, inductive, optical, transmission line and wireless.

P-0054[0054] The present invention also contemplates a thermal management aspect to its various systems in which a heat sink and a fan may be attached to the connector in a manner such that the heat sink makes contact with a heat generating surface of the IC so that it may dissipate both heat generated by the IC and the power delivery system, including the voltage regulator module used therein.

P-0055[0055] The present invention further may utilize an EMI control system, that is formed as part of the connector to shield EMI radiated by the IC. All of these systems advantageously permit increased interconnect densities, reduced circuit board real estate and IC package volume, and improved product manufacturing and reliability.

P-0056[0056] These and other objects, features and advantages of the present invention will be clearly understood through a consideration of the following detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

P-0057[0057] In the course of this detailed description, the reference will be frequently made to the attached drawings in which:

P-0058[0058]FIG. 1 is a functional block diagram of the broadest aspect of the present invention illustrating the association of the various systems aspects thereof with an integrated circuit;

P-0059[0059]FIG. 2 is a detailed block diagram of the systems of FIG. 1;

P-0060[0060]FIG. 3 is a table listing alternative locations for each of the system aspects of FIG. 2 and listing alternative connections between the system aspects;

P-0061[0061]FIGS. 4A, 4B, <b>4</b>C, <b>4</b>D and <b>4</b>E are diagrammatic views of the integrated circuit of FIGS. 1, 2 and <b>3</b>, illustrating increasing Levels 0, 1, 2, 3 and 4 of integration, respectively and the package design system aspects of the present invention;

P-0062[0062]FIG. 5 is a diagrammatic view of the integrated circuit of FIGS. <b>4</b>A-<b>4</b>E illustrating the IC package design power and signal connections in accordance with the principles of the present invention;

P-0063[0063]FIG. 6A is the same view as FIG. 5, but illustrating high and low frequency signal interfaces coupled to different sides of the IC;

P-0064[0064]FIG. 6B is the same view as FIG. 5, but illustrating pairs of first (high) and second (low) frequency signal interfaces which are coupled to the same side of the integrated circuit;

P-0065[0065]FIG. 7A is the same view as FIG. 5, but illustrating different first and second signal type interfaces coupled to different sides of the integrated circuit;

P-0066[0066]FIG. 7B is the same view as FIG. 5, but illustrating different first and second type of signal interfaces interface coupled to the same side of the integrated circuit;

P-0067[0067]FIGS. 8A, 8B, <b>8</b>C and <b>8</b>D are diagrammatic cross-sectional views of the integrated circuit of FIGS. 4C and 5, illustrating the signal and/or power connections located outside, flush with, recessed or inside the semiconductor package;

P-0068[0068]FIGS. 9A, 9B and <b>9</b>C are diagrammatic views of the integrated circuit, as shown in FIGS. 5 and 8A-<b>8</b>D, illustrating the locations of the signal and/or power contact on the respective top, bottom and/or sides of the integrated circuit;

P-0069[0069]FIGS. 10A, 10B and <b>10</b>C illustrate a plan view of the integrated circuit, as shown in FIGS. 8A, 8B, <b>8</b>C or <b>8</b>D, and FIG. 5, having signal contacts and/or power contacts located on the top, side and/or bottom of the integrated circuit representing the package design system in accordance with the preferred embodiments of the present invention.

P-0070[0070]FIG. 11 is a diagrammatic elevational view of the integrated circuit of FIG. 5 and located in a connector;

P-0071[0071]FIG. 12A is a diagrammatic elevational view of the integrated circuit of FIG. 11 located in a connector formed as a cover of the integrated circuit;

P-0072[0072]FIG. 12B is a diagrammatic elevational view of the integrated circuit of FIG. 11 located in a connector formed as a socket that receives the integrated circuit;

P-0073[0073]FIG. 12C is a diagrammatic elevational view of the integrated circuit of FIG. 11 located in a connector formed as a frame that receives the integrated circuit;

P-0074[0074]FIG. 13 is a diagrammatic elevational view of the integrated circuit of FIG. 11 coupled to a remote circuit located in a connector or on a circuit board;

P-0075[0075]FIG. 14 is a diagrammatic elevational view of the integrated circuit of FIG. 13 that is coupled together in a stacked arrangement;

P-0076[0076]FIG. 15 is a diagrammatic elevational view of the integrated circuit and remote circuit of FIGS. <b>13</b> or <b>14</b>, with each such circuit including a voltage regulator module and decoupling capacitance located in a connector;

P-0077[0077]FIG. 16 is a diagrammatic elevational view of the integrated circuit and remote circuit of FIGS. <b>13</b> or <b>14</b>, with each circuit including a voltage regulator module and a decoupling capacitance;

P-0078[0078]FIG. 17 is a diagrammatic elevational view of the integrated circuit and remote circuit of FIGS. <b>13</b> or <b>14</b>, with each circuit including a voltage regulator module and decoupling capacitance located on a circuit board;

P-0079[0079]FIG. 18 is a diagrammatic elevational view of the integrated circuit and remote circuit of FIGS. <b>13</b> or <b>14</b>, with each circuit including a voltage regulator module located on a conductor and a decoupling capacitance located in a connector;

P-0080[0080]FIG. 19 is a diagrammatic elevational view of the integrated circuit and remote circuit of FIGS. <b>13</b> or <b>14</b>, with each circuit including a voltage regulator module located on a circuit board and a decoupling capacitance located in a connector;

P-0081[0081]FIG. 20 is a diagrammatic elevational view of the integrated circuit of FIG. 11 combined with a thermal management and electromagnetic interference (EMI) control system;

P-0082[0082]FIG. 21 is a cross-sectional view of a Level Two semiconductor package constructed in accordance with the principles of the present invention with an upright semiconductor die and capacitive type signal interface, with power supplied to the side of the IC;

P-0083[0083]FIG. 22 is a cross-sectional view of a Level Two semiconductor package constructed in accordance with the principles of the present invention with a flipped semiconductor die and utilizing a capacitive type signal interface and power supplied to the side of the integrated circuit;

P-0084[0084]FIG. 23 is a cross-sectional view of the IC package of FIG. 21 with a heat sink member attached thereto;

P-0085[0085]FIG. 24 is a cross-sectional view of a Level Two semiconductor package with an upright semiconductor die, capacitive type of signal interface and with power supplied from the sidewalls of the package;

P-0086[0086]FIG. 25 is a cross-sectional view of a of a Level Two semiconductor package of the present invention with a flipped semiconductor die, capacitive type of signal interface and power contacts on the top of the package;

P-0087[0087]FIG. 26 is a cross-sectional view of a Level One semiconductor package with a flipped semiconductor die, capacitive type of signal interface and power contacts on the top of the integrated circuit;

P-0088[0088]FIG. 27 is a cross-sectional view of the integrated circuit of FIG. 26, carried by a socket connector that supports both a decoupling capacitance and heat sink, similar to that shown in FIGS. 12B and 19;

P-0089[0089]FIG. 28 is a perspective view of an IC assembly incorporating systems of the present invention, that is formed as a level two semiconductor package carried in a connector that is formed as a cover and a socket that supports a decoupling capacitance and heat sink;

P-0090[0090]FIG. 29 is an exploded view of the system assembly of FIG. 29;

P-0091[0091]FIG. 30 is a cross-sectional view of the assembly of FIG. 28, taken along lines <b>30</b>-<b>30</b> thereof;

P-0092[0092]FIG. 31 is a cross-sectional view of an alternate system assembly constructed in accordance with the principles of the present invention;

P-0093[0093]FIG. 32 is a perspective assembly view of another embodiment of a power delivery member of the present invention, taken from the underside and illustrating an alternate means of supplying power to the capacitor structure thereof; where the IC is formed as a level two semiconductor package as shown in FIG. 4C;

P-0094[0094]FIG. 33 is a is a perspective view of another system assembly cover used with a level two semiconductor package shown in FIG. 4C, and having an external means for connecting to a power supply;

P-0095[0095]FIG. 34 is a perspective view of an alternate embodiment of a system assembly utilizng a capacitor power delivery structure of the present invention in place upon a chip package and having a means for communicating with a heat sink;

P-0096[0096]FIG. 35 is a sectional view taken along lines <b>34</b>-<b>34</b> of FIG. 34;

P-0097[0097]FIG. 36 is a perspective view, taken from the underside, of an alternate embodiment of a capacitor structure used in the power delivery systems of the present invention and useful for supplying different levels of power to an IC;

P-0098[0098]FIG. 37 is the same view as FIG. 36, but taken from a different angle and with its housng removed for clarity;

P-0099[0099]FIG. 38 is a sectional view of the capacitor structure of FIG. 37, taken along lines <b>38</b>-<b>38</b> thereof;

P-0100[0100]FIG. 39 is a partial end view of another embodiment of a capacitor structure constructed in accordance with the principles of the present invention and having staggered power leads extending therefrom;

P-0101[0101]FIG. 40 is an enlarged perspective detail view of a corner of another embodiment of a power delivery structure constructed in accordance with the principles of the present invention and illustrating the use of more than two capacitor plates;

P-0102[0102]FIG. 41 is a perspective view of a power delivery member of the present invention mounted within a housing mounted to an IC, with the housing shown transparent for clarity;

P-0103[0103]FIG. 42 is an end view of the section of FIG. 35;

P-0104[0104]FIG. 43 is a perspective view of a connector structure constructed in accordnace with the principles of the present invention;

P-0105[0105]FIG. 44 is an exploded view of an alternate power delivery system constructed in accordance with the principles of the present invention and which utilize a plurality of discrete power capacitors supported within a housing that supports the IC;

P-0106[0106]FIG. 45 is the same view as FIG. 44, but with the components assembled together on a cicruit board;

P-0107[0107]FIG. 46 is a sectional view of the assembly of FIG. 45 taken along lines <b>46</b>-<b>46</b> thereof;

P-0108[0108]FIG. 47 is a perspective view of the assembly of FIG. 45 with a heat sink member in place upon the IC and assembly;

P-0109[0109]FIG. 48 is an enlarged detail view of a portion of the assembly of FIG. 45, illustrating a discrete capacitor used therein;

P-0110[0110]FIG. 49 is a sectional view of the connector assembly of FIG. 47 taken along lines <b>49</b>-<b>49</b> thereof;

P-0111[0111]FIG. 50 is an enlarged detail view of the comer of the assembly of FIG. 45, illustrating a means for retaining the assembly in place;

P-0112[0112]FIG. 51 is an enlarged detail view of an alternate construction of a socket connector constructed in accordance with the principles of the present invention illustrating the use of wire contacts that contact both the IC and discrete capacitors;

P-0113[0113]FIG. 52 is a perspective view of the connector assembly of FIG. 51;

P-0114[0114]FIG. 53 is an enlarged detail sectional view of interior area “A” the connector assembly of FIG. 52;

P-0115[0115]FIG. 54 is a detailed exploded view of a portion of the connector assembly of FIG. 52, illustrating the placement of a discrete capacitor therewith;

P-0116[0116]FIG. 55 is a perspective view of a carrier strip containing leads used in the connector assembly of FIG. 52;

P-0117[0117]FIGS. 56 and 57 are underside perspective views of the cover member used in the systems illustrated in FIG. 30; and, FIG. 58 is an enlarged detail view of an alternative manner of mounting a discrete capacitor in a connector fo the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

P-0118[0118] The present invention is directed to an improved power delivery system <b>12</b>, a signal transfer system <b>14</b>, a package design system <b>16</b>, a thermal management system <b>18</b>, and an EMI control system <b>20</b> for an IC <b>22</b>. Present and anticipated advancements in semiconductor technology have and will produce ICs, such as microprocessors, that have faster clock rates, higher power, lower supply voltages, higher DC currents, higher transient currents, narrower voltage margins, high non-uniform heat densities, and increased frequency EMI emissions. Ancillary benefits to these advancements include microprocessors that have increased interconnect densities and improved product manufacturability and reliability. Semiconductor manufacturers anticipate that near future microprocessors typically will require 1.0V or less operating voltage, 100A or greater current, 300 A/μsec or faster transient currents, voltage regulator efficiency greater than 90%, voltage regulation within 5% or less, and voltage ripple less than 1%. These requirements present a significant advancement over present microprocessor designs, and microprocessors having these characteristics, as will future packaging will need new support systems for power delivery, signal transfer, packaging, thermal management, and EMI control. The present invention is directed to improvements for these systems and others, all of which will beneficially support advanced semiconductor technology.

P-0119[0119] FIGS. <b>1</b> to <b>20</b> generally illustrate and FIGS. <b>21</b> to <b>58</b> more particularly illustrate, the power delivery system <b>12</b>, the signal transfer system <b>14</b>, the package design system <b>16</b>, the thermal management system <b>18</b>, and the EMI control system <b>20</b> for the IC <b>22</b>, all in the different embodiments of the present invention which are illustrated therein. FIG. 1 illustrates a general block diagram of an electronic device or system <b>10</b> that includes a power delivery system <b>12</b>, a signal transfer system <b>14</b>, a package design system <b>16</b>, a thermal management system <b>18</b>, and an EMI control system <b>20</b> for an IC <b>22</b>. FIG. 2 illustrates a more detailed block diagram <b>32</b> of the power delivery, signal transfer and package design systems of FIG. 1, which explains the relationship among and between the power delivery system <b>12</b>, the signal transfer system <b>14</b> and the package design system <b>16</b> for the IC <b>22</b>.

P-0120[0120]FIG. 3 is a table <b>56</b> that lists alternative locations for each of the system blocks illustrated in FIG. 2, as well as alternate connections between and among the system blocks. FIGS. <b>4</b>-<b>10</b> illustrate various packaging design systems <b>16</b> for the IC <b>22</b>, as shown in FIGS. <b>1</b>-<b>3</b>. FIGS. 11 and 12A, <b>12</b>B and <b>12</b>C illustrate the integrated circuit, as shown in FIG. 5, being located in a connector <b>112</b>, formed as a cover, a socket, or a frame, or located on a printed circuit board (PCB) <b>114</b> and having signal <b>26</b> and/or power <b>24</b> connections formed as a conductor <b>116</b> and/or as a PCB trace <b>118</b>. FIGS. 13 and 14 illustrate two arrangements of the IC <b>22</b>, as shown in FIG. 11, coupled to a remote circuit <b>52</b> located in a connector <b>140</b> or on a PCB <b>114</b>. FIGS. <b>15</b>-<b>19</b> illustrate the IC <b>22</b> and the RC <b>52</b>, as shown in FIGS. 13 and 14, having a voltage regulator <b>38</b> and decoupling capacitance <b>42</b>, each being located in one of the connector <b>112</b>, on the conductor <b>116</b>, or on the PCB <b>114</b>, or any combination thereof. FIG. 20 illustrates the IC <b>22</b>, as shown in FIG. 11, having more details of the thermal management system <b>18</b> and the EMI emission control system <b>20</b>, as shown in FIG. 1. FIGS. 21 and 22 illustrate package design systems <b>16</b> for the IC <b>22</b> having power contacts located on the side of the IC <b>22</b>. FIG. 23 illustrates an assembly of the system <b>10</b> using the IC <b>22</b>, as shown in FIG. 21. FIGS. <b>24</b> to <b>26</b> illustrate package design systems <b>16</b> for the IC <b>22</b> having power contacts located on the top of the IC <b>22</b>. FIG. 27 illustrates an assembly of the system <b>10</b> using the IC <b>22</b>, as shown in FIG. 26. FIGS. <b>28</b> to <b>31</b> illustrate various assembly views of the system <b>10</b>. FIGS. 32 and 33 illustrate the connector <b>112</b>, formed as a socket or a cover, having the decoupling capacitance <b>42</b>, formed as an integral capacitor. FIGS. <b>34</b> to <b>44</b> illustrate various embodiments of the decoupling capacitance <b>42</b>, formed as an integral capacitor, carried by a separate or integral connector <b>112</b>, formed as a cover, a socket or a frame. FIGS. <b>45</b> to <b>60</b> illustrate various embodiments of the decoupling capacitance <b>42</b>, formed as multiple discrete capacitors, carried by the connector <b>112</b>, formed as a cover, a socket or a frame.

P-0121[0121] Referring back to FIG. 1, it presents a block diagram of an electronic device <b>10</b> that includes a power delivery system <b>12</b>, a signal transfer system <b>14</b>, a package design system <b>16</b>, a thermal management system <b>18</b> and an EMI control system <b>20</b> for an IC <b>22</b>. The present invention finds its greatest utility in use with ICs in the form of microprocessors that are used in the field of computers, but it will be understood that its principles and structure may be applied to other ICs used in other applications. The power delivery system <b>12</b> provides power to the IC <b>22</b>, while the signal transfer system <b>14</b> transfers signals to and from the IC <b>22</b>. The package design system concerns the construction of the package, or housing in which the IC <b>22</b> may be held, while the thermal management system <b>18</b> cools the IC <b>22</b> during operation thereof and the EMI control system <b>20</b> blocks EMI from or toward the IC <b>22</b>.

P-0122[0122] The power delivery system <b>12</b> is coupled to the IC <b>22</b> by way of a power connection <b>24</b>, that preferably includes both power and ground components (not shown). The power connection <b>24</b> illustrated in FIGS. 1 &amp;2 and is preferably a bi-directional connection that represents power being routed from the power delivery system <b>12</b> pver a power path to the IC <b>22</b>, and also represents a ground path being routed from the IC <b>22</b> to the power delivery system <b>12</b>.

P-0123[0123] The signal transfer system <b>14</b> is coupled to the IC <b>22</b> by way of a signal connection <b>26</b>, which may include one or more signal path so that single signals may be routed along single paths and multiple signals may be routed over separate paths or multiplexed over one or more paths. The signal connection <b>26</b> also is preferably a bi-directional connection that represents signals routed from the IC <b>22</b> along the signal transfer system <b>14</b>, and signals routed from the signal transfer system <b>14</b> to the IC <b>22</b>. The signals typically include data, and/or control information.

P-0124[0124] The package design system <b>16</b> is typically inherent to the IC <b>22</b> and includes the construction of the IC <b>22</b> in a manner to work with the various aforementioned systems <b>12</b>, <b>14</b>, <b>18</b> and <b>20</b>. The thermal management system <b>18</b> is preferably coupled, or attached, directly to the IC <b>22</b> in opposition to a heat-generating surface thereof and preferably over a heat connection <b>28</b>, which represents a path for heat flow. The heat connection <b>28</b> shows a bi-directional connection to represent heat dissipated away from the IC <b>22</b> to the thermal management system <b>18</b>, and to represent are cooling directed from the thermal management system <b>18</b> to the IC <b>22</b>.

P-0125[0125] The EMI control system <b>20</b> is coupled to the IC <b>22</b> over EMI connection <b>30</b>. The EMI connection <b>20</b> represents a path for EMI <b>30</b>. The EMI connection <b>20</b> shows a bi-directional connection to represent EMI <b>30</b> generated and radiated by the IC <b>22</b>, and that radiated towards the IC <b>22</b> by other circuits.

P-0126[0126] The IC <b>22</b> includes a semiconductor device having one or more of the characteristics and requirements, described above, to support the advanced semiconductor technology. The IC <b>22</b> is preferably a microprocessor, but may also be any other type of signal processor, such as a digital signal processor (DSP) or application specific integrated circuit (ASIC). Alternatively, in appropriate applications, the IC <b>22</b> may be another type, such as a memory device, a controller, a transmitter or a receiver.

P-0127[0127] The electronic device or system <b>10</b> of FIG. 1 represents any type of electrical and/or mechanical systems that use integrated circuits, such as computers, telecommunication and medical devices and systems. The computers may typically include workstations, desktop and notebook computers, handheld computers, personal digital assistants and the like. The telecommunication devices and systems may include communications systems, satellite systems, microwave systems, land-based telephone switching systems, internet systems, and wireless telephone systems as well as Internet systems such as servers and routers. The medical devices and systems include diagnostic, analytic and treatment devices and systems and the like. All of these devices may or may not be portable. “Portable” devices are typically those referred to in the art as having a power delivery system that is temporary and which needs to be periodically replenished. Such portable devices draw direct current (DC) power from the power delivery system <b>12</b> by way of a rechargeable or non-rechargeable DC power supply.

P-0128[0128] Electronic devices that are not portable are those that have a fixed power delivery system that draws power to the power delivery system <b>12</b> in the form of alternating current (AC) from an AC power outlet. Usually these devices convert the AC power to DC power because the IC <b>22</b> draws DC power. However, in some applications, the IC <b>22</b> may draw AC power.

P-0129[0129]FIG. 2 is detailed block diagram <b>32</b> illustrating the power delivery, signal transfer and package design systems <b>12</b>, <b>14</b> &amp; <b>16</b> for the IC <b>22</b>. The power delivery system <b>12</b> includes a power supply <b>34</b>, a connection <b>36</b> between the power supply and the voltage regulator module, a voltage regulator module <b>38</b>, a connection <b>40</b> between the voltage regulator module and a decoupling capacitance <b>42</b>, a connection <b>44</b> from the decoupling capacitance to the IC, and, if desired, a connection <b>54</b> between the voltage regulator module and the IC. The signal transfer system <b>14</b> includes a remote circuit <b>52</b> and a connection <b>50</b> between it and the IC, while the package design system <b>16</b> preferably includes an IC power connection <b>46</b> and an IC signal connection <b>48</b>.

P-0130[0130] In operation, the power supply <b>34</b> may generate a relatively coarse regulated DC power at the power connection <b>36</b>. The voltage regulator module <b>38</b> converts this coarse DC power to a relatively fine regulated DC power downstream at the power connection <b>40</b> and transmits it as needed to the decoupling capacitance <b>42</b>, which <b>42</b> stores a predetermined amount of this regulated DC power and provides it to the IC along the power connection <b>44</b> to its power connection, or input <b>46</b>. Alternatively, the voltage regulator module <b>38</b> may supply the regulated DC power directly to the IC power connection <b>46</b> of the IC without using the decoupling capacitance <b>42</b>. The IC signal connection <b>48</b> transmits and receives signals to and from, respectively, the remote circuit <b>52</b> via the signal connection <b>50</b>.

P-0131[0131] In the power delivery system <b>12</b>, each of the power connections <b>36</b>, <b>40</b>, <b>44</b> and <b>54</b> show a bi-directional to represent power and ground extending between adjacent system blocks. The power connection <b>24</b> in FIG. 1 is the same as the power connection <b>44</b> in FIG. 2. Likewise, the signal connection <b>50</b> shows a bi-directional connection to represent signals being routed from the IC <b>22</b> to the remote circuit <b>52</b>, and to represent signals being routed from the remote circuit <b>52</b> to the IC <b>22</b>, as described above with reference to the signal connection <b>26</b>. Similarly, the signal connection <b>26</b> in FIG. 1 is the same as the signal connection <b>50</b> in FIG. 2.

P-0132[0132] The power supply <b>34</b> is preferably located at a remote location in the electronic device or system <b>10</b>, as indicated in Column A, Row 2 of the table <b>56</b> in FIG. 3. The remote location may be any location that is suitable to deliver power to the electronic device or system <b>10</b>. Hence, if the electronic device or system <b>10</b> has a housing, enclosure or the like, the power supply may be located inside or outside thereof. Preferably, the power supply <b>34</b> will be located inside the housing and mounted to a structure such as a chassis or circuit board. If the power supply <b>34</b> is located outside the housing, the power supply may typically be mounted to the outside of the housing. The power supply <b>34</b> is any type of device that generates power and which preferably converts power in the form of alternating current (AC) to power in the form of direct current (DC) at or along the power connection <b>36</b>. Such AC to DC power conversion is typical in nonportable electronic devices, as described above. Alternatively, the power supply <b>34</b> may generate the DC power directly from a DC power supply, such as a battery, capacitor or the like. The power supply <b>34</b> preferably generates the DC power at a relatively coarse regulated level to minimize the cost and complexity of the power supply <b>34</b>.

P-0133[0133] The power supply <b>34</b> will typically generate the DC power at a relatively high voltage and relatively low current at the power connection <b>36</b>, as is known in the art of power supplies However, the IC <b>22</b> may require DC power of relatively low voltage and relatively high current. Therefore, according to the preferred embodiments of the present invention, special consideration is given to where the DC power conversion from high voltage and low current to low voltage and high current is made, as well as the location and type of the power connections for the high voltage, low current DC power and for the low voltage, high current DC power.

P-0134[0134] The high voltage, low current DC power advantageously permits power to be routed over power connections, such as a wire or a circuit board trace, that are constructed of a relatively lightweight amount of conductive material, which minimizes the cost of the power connections. These conductive materials may include metals, conductive inks and the like. The design of the traces on a circuit board that form the power connections will typically determine the most amount of the conductive plating on the circuit board. The thickness of the conductive plating on the circuit board is the same across the entire circuit board because it is not cost effective to selectively apply different amounts or thicknesses of plating on different areas of the board. The cost associated with circuit board power connections may sometimes drive up the cost of the circuit board. For example, one ounce of copper plating is typically used to carry high voltage, low current DC power from the power supply <b>34</b>, via the traces on the circuit board to various electrical components mounted on the circuit board. In contrast, if the power supply <b>34</b> were to output low voltage, high current power, then four ounces of the same plating would be needed on the circuit board to carry that same amount of power to the components on the board. Such a circuit board having four times the amount of plating is significantly more expensive.

P-0135[0135] According to the preferred embodiments of the present invention and as described in detail below, the circuit board traces forming the power connections on the circuit board preferably carry high voltage, low current DC power rather than low voltage, high current DC power in order to minimize the cost of circuit board. In such instances, conductors carry the low voltage, high current DC power directly from the voltage regulator module <b>38</b> and/or decoupling capacitance <b>42</b> to the IC <b>22</b>, without being routed through circuit board traces.

P-0136[0136] The voltage regulator module <b>38</b> may be any device that converts high voltage, low current DC power at the power connection <b>36</b> to low voltage, high current DC power appropriate for the IC <b>22</b>. Preferably, the voltage regulator module <b>38</b> generates the DC power at a relatively fine regulated level to minimize the cost and complexity of the voltage regulator module <b>38</b> while maximizing the performance of the voltage regulator module <b>38</b>. The terms “coarse” and “fine,” and “high” and “low,” as used herein, are relative terms that distinguish the performance and operation of the power supply <b>34</b> and the voltage regulator module <b>38</b>, and are not intended to be limited to any particular values or levels. It is desirable that the voltage regulator module <b>38</b> is constructed as a module of discrete and/or integrated circuit components, and, if necessary, mounted on a separate circuit board. Alternatively, the voltage regulator module <b>38</b> may be constructed of only discrete circuit components or only integrated circuit components, as necessary or desired.

P-0137[0137] The decoupling capacitance <b>42</b> may include any type of capacitance that decouples power from the IC <b>22</b>. The decoupling capacitance <b>42</b> advantageously supplies the IC <b>22</b> with high transient currents when required, as described above. The decoupling capacitance <b>42</b> may be formed of separate discrete capacitors or an integral capacitor. Discrete capacitors include, without limitation, ceramic, tantalum and gel (e.g., pocketed aero gel) capacitors, and the like, which may have leaded or surface mount end connections. Such capacitors also include chip-type capacitors. Discrete capacitors advantageously provide predetermined specifications and have known sizes. The connection to the discrete capacitors may utilize conductors such as single or multi-strand wire, stamped and formed, blanked leads and the like. The aforementioned discrete capacitors may be integrally formed with a carrier lead frame and may include relatively large parallel plates separated by a suitable dielectric. The integral capacitors may be rigid or flexible, and may be formed of a solid, liquid, paste, gel or gas. Integral capacitors advantageously permit custom specifications, shapes and configurations. The decoupling capacitance <b>42</b> is described in further detail below.

P-0138[0138] Each of the power supply <b>34</b>, the voltage regulator module <b>38</b> and the decoupling capacitance <b>42</b> may be combined in any appropriate way to form separate or integral, modules, devices, or components, or the like. Preferably, the power supply <b>34</b>, the voltage regulator module <b>38</b> and the decoupling capacitance <b>42</b> are constructed separately or in alternative constructions, the power supply <b>34</b> and the voltage regulator module <b>38</b> may be designed as a single, integrated device generating low voltage, high current, fine regulated DC power. Still further, the voltage regulator module <b>38</b> and the decoupling capacitance <b>42</b> may be designed as a single, integrated device capable of generating decoupled, low voltage, high current, fine regulated DC power.

P-0139[0139] The IC <b>22</b> may draw its power from the decoupling capacitance <b>42</b> via the power connection <b>44</b> or from the voltage regulator module <b>38</b> via the power connection <b>54</b>, as desired. Typically, the specifications of the IC <b>22</b> will dictate power output needed from the decoupling capacitance <b>42</b> and/or voltage regulator module <b>38</b>. If the IC <b>22</b> requires high transient currents that the voltage regulator module <b>38</b> alone cannot satisfy, an appropriate amount of the decoupling capacitance <b>42</b> is needed. Alternatively, if the voltage regulator module <b>38</b> can satisfy the transient currents required by the IC <b>22</b>, then the decoupling capacitance <b>42</b> is not needed on a continuous basis.

P-0140[0140] The power connection <b>44</b> includes any type of connection including for example conductive, capacitive, inductive and similar connections. The signal connection between the IC and the circuit board may include solder, land grid array (LGA), pin grid array (PGA), ball grid array (BGA), spring contact and other similar connections. The capacitive signal interface provides an interface for transmitting signals between two conductive plates having a suitable size and separated by a suitable dielectric material. The inductive signal interface provides an interface for transmitting signals between two conductors having a particular orientation to one another and separated by a predetermined distance.

P-0141[0141] The remote circuit <b>52</b> designates memory devices, microprocessors, digital signal processor, application specific integrate circuit (ASIC), a hard disk drive, user interface device, transmitter, receiver or the like. In some applications, the remote circuit <b>52</b> and the IC <b>22</b> may be the same or different electronic circuits or devices.

P-0142[0142] The signal connection <b>50</b> may include signal interfaces such as conductive, capacitive, inductive, optical, transmission line, and wireless signal interface or the like. A conductive signal interface provides a galvanic signal interface that relies upon metal-to-metal contact such as those known in the art which include solder connections, land grid arrays (LGA), pin grid arrays (PGA), ball grid arrays (BGA) and the like. A capacitive signal interface is one that may transmit signals between two spaced-apart conductive plates, preferably of similar size and which are separated by a suitable dielectric material, or air. An inductive signal interface is one that transmits signals between two conductors having a particular orientation to one another and separated by a predetermined distance. The optical signal interface provides an interface for carrying signals modulated by a transmitter and demodulated by a receiver at an optical frequency, such as light, over a channel via an optical wave-guide, such as an optical fiber. The transmission line signal interface provides an interface for carrying signals between or on two parallel conductors, including coax, micro-strip, co-planar, strip-line and the like. The wireless signal interface provides an interface for carrying signals modulated by a transmitter and demodulated by a receiver at a radio frequency over a radio frequency channel via a radio transmission media, such as air or space. Each of the power and signal connections <b>44</b>, <b>50</b> may be delivered to the IC <b>22</b> via any type of mating arrangement, such as a circuit board, edge card assembly, pin and socket assembly, plug assembly, solder, conductive adhesive, pins, spring fingers, and the like.

P-0143[0143]FIG. 3 illustrates a table <b>56</b> listing alternative locations listed in Columns A, C, E, H and K thereof for each system block <b>34</b>, <b>38</b>, <b>42</b>, <b>22</b> &amp; <b>52</b> shown in FIG. 2 and alternative connections listed in Columns B, D, F, G, I and J between the system blocks <b>36</b>, <b>40</b>, <b>44</b>, <b>46</b>, <b>48</b>, and <b>50</b> of FIG. 2. System block reference numbers <b>36</b>, <b>40</b>, <b>44</b> and <b>50</b> of FIG. 2 that directly correspond to columns in the table <b>56</b> are not enclosed in parenthesis in the table <b>56</b>. For example, the power connection <b>36</b> directly corresponds to the power connection described in Column B, Row <b>1</b>. System block reference numbers <b>34</b>, <b>38</b>, <b>42</b>, <b>46</b>, <b>22</b>, <b>48</b> and <b>52</b> of FIG. 2 that indirectly correspond to Columns in Table <b>56</b> are enclosed in parenthesis, such as the power supply <b>34</b> of FIG. 2 indicating the power supply itself, and Column A, Row 1 describes the location of the power supply. In the table <b>56</b>, the alternative voltage regulator module to IC power connection <b>54</b> of FIG. 2, is not shown for sake of clarity. However, alternative power connection <b>54</b> includes a conductor and a circuit board trace, which is the same as all of the other connections listed in table <b>32</b> of FIG. 3.

P-0144[0144] In the table <b>56</b>, the power supply location is described as being remote, as shown in column A, row <b>2</b>. The term “remote” in this description generally means that the power supply is located in any suitable place away from the remaining circuitry of the electronic device <b>10</b>. This description is used to reflect present and anticipated future designs of power supplies that are relatively complicated circuits in their own right and are typically formed as modules that interface to the remaining circuitry. The term “remote” does not imply a distance relationship where the power supply is located far from the remaining circuitry because, practically speaking, the power supply <b>34</b> is electrically coupled to the remaining circuitry.

P-0145[0145] The location of the voltage regulator module <b>38</b>, the decoupling capacitance <b>42</b>, the IC <b>22</b> and the remote circuit <b>52</b>, as described in Row one, Columns C, E, H and K, respectively, are each described as being located in a connector, on a PCB, and/or on a conductor, as described in Rows 2, 3 and 4, respectively, of the same four Columns.

P-0146[0146] The connector is a device that electrically couples electrical signals to an electronic device. The electrical signals carried by the connector typically include power and/or information signals. The connector also has mechanical features to facilitate the electrical connection to the electrical device. In the preferred embodiments of the present invention, the connector is formed as a cover, a frame and/or a socket for the IC.

P-0147[0147] The circuit board is a substrate which includes one or more layers of nonconductive material for carrying conductive paths, otherwise known as traces or contact pads. The conductor is a device that electrically couples electrical signals from one electronic device to another electronic device. The electrical signals carried by the conductor typically include power and/or signals. The conductor may be flexible, or rigid or a combination thereof. Examples of flexible conductors include flexible circuitry, ribbon cable, wire, cable and the like. An example of a rigid conductor includes a conventional circuit board with conductive traces disposed thereon. The conductor is usually located off of the main circuit board, commonly referred to as a motherboard.

P-0148[0148] The power connections <b>36</b>, <b>40</b> and <b>44</b>, and the signal connection <b>50</b>, as described in Row one, Columns B, D, F and J, respectively, are each described as being a conductor and/or circuit board trace, as described in Rows 2 and 3, respectively, of the same four Columns. The term “conductor” in this description generally means the same as described above with reference to the location of the functional blocks. Therefore, the conductor may serve as both the location of the functional blocks and the power and/or signal connection. The traces provide conductive paths, disposed on one or more layers of a nonconductive material, for carrying electrical signals. The electrical signals carried by the traces typically include power and/or information signals.

P-0149[0149] The locations of the IC power connection <b>46</b> and the IC signal connection <b>48</b>, as described in Row one, Columns G and I, respectively, are each described as being located on the top, side (lateral) and/or bottom of the IC <b>22</b>, as described in rows 2, 3 and 4, respectively, of the same two columns. In this description, the terms “top,” “side,” and “bottom” refer to different sides or surfaces of the IC <b>22</b>, which typically may be square, circular or rectangular, and these are relative terms used for explanation purposes only, and should not be construed as being limited to what may be conventionally regarded as the top, side, or bottom of the IC <b>22</b>. Typically, the top and bottom surfaces of the IC <b>22</b> have surface areas that are greater than that of each side of the IC, as is typical with present day ICs formed as microprocessors. The locations of the IC power connection <b>46</b> and the IC signal connection <b>48</b> are described in further detail below.

P-0150[0150] With this general overview of the table <b>56</b> of FIG. 3 Columns A, B, C, D, E, F, G, H, I, J and K describe 1, 2, 3, 2, 3, 2, 3, 3, 3, 2 and 3 individual alternatives, respectively, in rows 2, 3 and 4. Hence, the table <b>56</b>, alone and without any other description or figure, discloses 11,664 possible combinations (i.e. 1×2×3×2×3×2×3×3×3×2×3=11,664) of the various individual alternatives. The number of possible combinations illustrates the many ways in which the power delivery system <b>12</b>, the signal transfer system <b>14</b> and the packaging design system <b>16</b> for the IC <b>22</b> may be implemented. The present invention is not meant to be limited to this number of possible combinations because there are many other features and alternatives described in the present specification and illustrated in the present figures that may be used in combination with the alternatives listed in the table <b>56</b>. Further, combinations of the various individual alternatives used at the same time would also increase the number of possible combinations.

P-0151[0151] If the alternative power connection <b>54</b> is used, without the decoupling capacitance <b>42</b> and the power connection <b>44</b>, as shown in FIG. 2, then the number of total combinations would be reduced by the 3 individual alternatives for the location of the decoupling capacitance <b>42</b> and by the 2 individual alternatives for the type of the power connection <b>44</b> (i.e., 11,664/(3×2)=1,994 possible combinations).

P-0152[0152]FIGS. 4A, 4B, <b>4</b>C, <b>4</b>D and <b>4</b>E illustrate the IC <b>22</b>, as shown in FIGS. 1, 2 and <b>3</b>, having increasing levels of integration and identified respectively as levels 0, 1, 2, 3 and 4 which represent the package design system <b>16</b>. FIG. 4A illustrates the IC <b>22</b> constructed at integration level 0 and includes a semiconductor die <b>58</b>, otherwise known as a chip, wafer, and the like. FIG. 4B illustrates the IC <b>22</b> constructed at integration level 1 and includes the semiconductor die <b>58</b>, as shown in FIG. 4A, mounted on a semiconductor substrate <b>60</b>. FIG. 4C illustrates the IC <b>22</b> constructed at integration level 2 and includes the semiconductor die <b>58</b> mounted on the semiconductor substrate <b>60</b>, as shown in FIG. 4B, enclosed within a semiconductor package <b>62</b>, such as plastic, ceramic and the like. FIG. 4D illustrates the IC <b>22</b> constructed at integration level 3 and includes the semiconductor package <b>62</b>, as shown in FIG. 4C mounted on a circuit board <b>64</b>, sometimes referred to as an interposer board. FIG. 4E illustrates the IC <b>22</b> constructed at integration level 4 and includes the semiconductor package <b>62</b> and the PCB <b>64</b>, as shown in FIG. 4D, mounted on a larger circuit board <b>66</b>, sometimes referred to as a motherboard. Preferably, the IC <b>22</b> is constructed using integration level 2, as shown in FIG. 4C. However, ICs are anticipated to be constructed using integration level 1, as shown in FIG. 4B.

P-0153[0153] The various levels of integration are illustrated for reference only and should not be interpreted as being critically defined. Various combinations of the levels of integration are possible which are not specifically shown. For example, the semiconductor die <b>58</b> mounted on the semiconductor substrate <b>60</b>, as shown in FIG. 4B, may be mounted directly on the PCB <b>64</b>, without using the semiconductor package <b>62</b>. Likewise, the semiconductor package <b>62</b>, as shown in FIG. 4C, may be mounted directly on the motherboard <b>66</b>, without using the PCB <b>64</b>. Hence, individual parts of the illustrated levels of the IC <b>22</b> may be mixed and matched to provide numerous combinations of integration not specifically shown in FIGS. 4A, 4B, <b>4</b>C, <b>4</b>D and <b>4</b>E.

P-0154[0154] In FIGS. 4B to <b>4</b>E, the packages have multiple surfaces that may be considered generically as “top” or “side” surfaces. These multiple surfaces result from the elements being stacked or mounted on one another to form a stair-step profile. Hence, the terms “top” or “side” may include all surfaces facing in the same direction, and are not limited to the surface farthest out in the one direction.

P-0155[0155] In FIG. 5 the IC <b>22</b>, the power delivery system <b>12</b>, the signal transfer system <b>14</b> are shown schematically. The IC <b>22</b> in this Figure generally includes the packaging design system <b>16</b> having the IC power connection <b>46</b> and the IC signal connection <b>48</b> formed therewith. Hence, the block diagram shown FIG. 5 is generally the same as the block diagram shown in FIG. 2, except that the IC <b>22</b> is illustrated as a schematic elevational view. FIG. 5 shows several illustration conventions that apply to all of the figures. A solid line represents the preferred path for the signal connection <b>26</b> and the preferred power connection <b>24</b>. A short dashed line represents alternative paths for the signal connections <b>26</b>. A long dashed line represents alternative paths for the power connections <b>24</b>. These illustration conventions are provided to add clarity and understanding to the Figures and this description, and should not be interpreted as limiting in any way, such as implying that any one connection is more important or better than another.

P-0156[0156] The signal transfer system <b>14</b> is electrically coupled to the IC signal connection <b>48</b> of the IC <b>22</b>, as described with FIG. 2, via the signal connection <b>26</b>. The signal connection <b>26</b> may be electrically coupled to the top <b>68</b>, the bottom <b>70</b> and/or the side <b>74</b> of the IC <b>22</b>. Preferably, the signal connection <b>26</b> is electrically coupled to the bottom <b>70</b> of the IC <b>22</b>. Hence, the IC signal connection <b>48</b>, shown inside the elevation view of the IC <b>22</b>, represents that the signal connection <b>26</b> may be located on any surface of the IC <b>22</b>.

P-0157[0157] The power delivery system <b>12</b> is electrically coupled to the IC power connection <b>46</b> of the IC <b>22</b>, as described with FIG. 2, via the power connection <b>24</b>. The power connection <b>24</b> may be electrically coupled to the top <b>68</b>, the bottom <b>70</b> and/or the side <b>74</b> of the IC <b>22</b>. Preferably, the power connection <b>24</b> is electrically coupled to the side <b>72</b> of the IC <b>22</b>. Hence, the IC power connection <b>46</b>, shown inside the elevation view of the IC <b>22</b>, represents that the power connection <b>24</b> may be located on any surface of the IC <b>22</b>.

P-0158[0158] In the preferred embodiments of the present invention, the signal connection <b>26</b> and the power connection <b>24</b> are located on different sides (i.e., the bottom <b>70</b> and the side <b>72</b>, respectively) of the IC <b>22</b>. Locating the signal connection <b>26</b> and the power connection <b>24</b> on different sides of the IC <b>22</b> provides several advantages related to the package design system <b>16</b> of the IC <b>22</b>. The advantages include reducing the number of ground contacts and power contacts, increasing the number of signal contacts, increasing the number of signal contacts per square area, reducing the signal contact pitch, reducing the number of total contacts, increasing the number of total contacts per square area, reducing the force per contact per square area along the Z-axis, reducing the mated contact height, increasing the signal bandwidth, increasing the semiconductor die size, reducing the IC <b>22</b> size, as well as improving other factors related to electronics, mechanics and materials.

P-0159[0159] Alternatively, the signal connection <b>26</b> and the power connection <b>24</b> may be located on the same of one or more sides (i.e., top <b>68</b>, bottom <b>70</b> and side(s) <b>72</b>) of the IC <b>22</b>. In this case, special consideration would be given to the location of the signal connection <b>26</b> and the power connection <b>24</b> on the same side of the IC <b>22</b> to optimize the connections for various engineering reasons, as described in further detail below.

P-0160[0160]FIG. 6A illustrates the IC <b>22</b>, as shown in FIG. 5, having a first (high) frequency signal interface <b>76</b> and a second (low) frequency signal interface <b>78</b>, different from the first (high) frequency signal interface <b>76</b>, each coupled to different sides of the IC <b>22</b> representing the package design system <b>16</b> in accordance with the preferred embodiments of the present invention. Hence, the signal connection <b>26</b> includes both the first (high) frequency signal interface <b>76</b> and the second (low) frequency signal interface <b>78</b>. The frequencies of the first (high) frequency signal interface <b>76</b> and the second (low) frequency signal interface <b>78</b> are separated by at least one hertz. However, the benefits of separating the signal interfaces on different side of the IC <b>22</b> based on frequency increases as the separation between the frequencies becomes greater.

P-0161[0161] Each of the first (high) frequency signal interface <b>76</b> and the second (low) frequency signal interface <b>78</b> may be connected to any side (i.e., top <b>68</b>, bottom <b>70</b> and side(s) <b>72</b>) of the IC <b>22</b>. Preferably, the first (high) frequency signal interface <b>76</b> is connected to the top <b>68</b> of the IC <b>22</b> and the second (low) frequency signal interface <b>78</b> is connected to the bottom <b>70</b> of the IC <b>22</b>. This location arrangement advantageously permits the power connection <b>24</b> to be connected to the side(s) <b>72</b> of the IC <b>22</b>, without considering the location of the signal connection <b>26</b> on the side(s) <b>72</b> of the IC <b>22</b>.

P-0162[0162] Further, this location arrangement advantageously corresponds to one type of signal interface (shown in table <b>84</b> in FIGS. 7A and 7B) to be used on one side of the IC <b>22</b> and another type of signal interface to be used on another side of the IC <b>22</b>. For example, the first (high) frequency signal interface <b>76</b> may use a capacitive type of signal interface and the second (low) frequency signal interface <b>78</b> may use the conductive type of signal interface. In this example, it would be beneficial for the second (low) frequency signal interface <b>78</b> to transfer signals to and from a PCB via the conductive type of signal interface, and beneficial for the first (high) frequency signal interface <b>76</b> to transfer signals to and from a conductor via the capacitive type of signal interface. In other words, the low frequency signals would be carried via PCB traces on the PCB and the high frequency signals would be carried via the conductor. The conductors carry the high frequency signals to other circuits directly, without entering the PCB, or by entering the PCB next to the other circuits and continuing over a short distance via PCB traces. This particular arrangement permits the cost and size of the PCB to be minimized because complex routing of high frequency transmission lines among multiple PCB layers is minimized or eliminated.

P-0163[0163]FIG. 6B is an elevational view of the IC <b>22</b>, as shown in FIG. 5, having the first (high) frequency signal interface <b>76</b> and the second (low) frequency signal interface <b>78</b>, different from the first (high) frequency signal interface <b>76</b>, each coupled to the same side of the IC <b>22</b> representing the package design system <b>16</b> in accordance with the preferred embodiments of the present invention. Hence, FIG. 6B is the same as FIG. 6A except for the location of the first (high) frequency signal interface <b>76</b> and the second (low) frequency signal interface <b>78</b> on the sides (i.e., top <b>68</b>, bottom <b>70</b> and side(s) <b>72</b>) of the IC <b>22</b>.

P-0164[0164] The first (high) frequency signal interface <b>76</b> and the second (low) frequency signal interface <b>78</b> may be located on any side (i.e., top <b>68</b>, bottom <b>70</b> and side(s) <b>72</b>) of the IC <b>22</b>. Preferably, the first (high) frequency signal interface <b>76</b> and the second (low) frequency signal interface <b>78</b> are located on the bottom <b>70</b> of the IC <b>22</b>. Alternatively, the first (high) frequency signal interface <b>76</b> and the second (low) frequency signal interface <b>78</b> may be located on the top <b>68</b> or the side(s) <b>74</b> of the IC <b>22</b>.

P-0165[0165] Locating the first (high) frequency signal interface <b>76</b> and the second (low) frequency signal interface <b>78</b> on the same side of the IC <b>22</b> advantageously permits the high and low frequency signals to be electrically coupled to the same PCB, connector, conductor or other IC. This location arrangement is practical where the signal connections <b>26</b> have many of one frequency signal interface and few of the other frequency signal interface, wherein allocating them to different sides of the IC <b>22</b> would be more expensive or more complex than allocating them to the same side of the IC <b>22</b>.

P-0166[0166] This location arrangement may require a hybrid interface connection between the IC <b>22</b> and the PCB, the connector, the conductor or other the IC to accommodate the different frequencies. For example, the first (high) frequency signal interface <b>76</b> may use a capacitive type of signal interface and the second (low) frequency signal interface <b>78</b> may use the conductive type of signal interface. In this case, the hybrid interface connection accommodates both the capacitive and conductive types of signals. More particularly, the hybrid interface connection would include both dielectric elements for the capacitive type of signals and galvanic contacts for the conductive type of signal.

P-0167[0167]FIG. 7A is an elevational view of the IC <b>22</b>, as shown in FIG. 5, having a first type of signal interface <b>80</b> and a second type of signal interface <b>82</b>, different from the type of signal interface <b>80</b>, each coupled to different sides (i.e., top <b>68</b>, bottom <b>70</b> and side(s) <b>72</b>) of the IC <b>22</b> representing the package design system <b>16</b> in accordance with the preferred embodiments of the present invention. Hence, the signal connection <b>26</b> includes both the first type of signal interface <b>80</b> and the second type of signal interface <b>82</b>. The first type of signal interface <b>80</b> and the second type of signal interface <b>82</b> may transfer signals at the same or different frequencies.

P-0168[0168] Each of the first type of signal interface <b>80</b> and the second type of signal interface <b>82</b> include, without limitation, conductive, capacitive, inductive, optical, transmission line, and wireless, as shown in a table <b>84</b> included with FIG. 7A. Each of these examples of the types of signal interfaces is described in detail above. Note that the types of signal interfaces also include characteristics of the signals carried by the types of signal interfaces. Such signal characteristics include, without limitation, frequency, amplitude, modulation, and the like.

P-0169[0169] Each of the first type of signal interface <b>80</b> and the second type of signal interface <b>82</b> may be connected to any side (i.e., top <b>68</b>, bottom <b>70</b> and side(s) <b>72</b>) of the IC <b>22</b>. Preferably, the first type of signal interface <b>80</b> is connected to the top <b>68</b> of the IC <b>22</b>, and the second type of signal interface <b>82</b> is connected to the bottom <b>70</b> of the IC <b>22</b>. Alternatively, the second type of signal interface <b>82</b> may be connected to the side(s) <b>74</b> of the IC <b>22</b>.

P-0170[0170] This type of signal interface arrangement is advantageous when the electrical and/or mechanical characteristics of each type of signal interface are so different that it less expensive or easier to locate them on different sides of the IC <b>22</b>. For example, the first type of signal interface <b>80</b> may be optical and the second type of signal interface <b>82</b> may be capacitive. In this case, the optical interface transfers signals in the form of light and the capacitive interface transfers electrical signals in the form of electrons. Therefore, it would be beneficial to construct the optical signal interface on one side of the IC <b>22</b> and the capacitive signal interface on another side of the IC <b>22</b>.

P-0171[0171]FIG. 7B illustrates the IC <b>22</b>, as shown in FIG. 5, having the first type of signal interface <b>80</b> and the second type of signal interface <b>82</b>, different from the type of signal interface <b>80</b>, each coupled to the same side of the IC <b>22</b> representing the package design system <b>16</b> in accordance with the preferred embodiments of the present invention. Hence, FIG. 7B is the same as FIG. 7A except for the location of the first type of signal interface <b>80</b> and the second type of signal interface <b>82</b> on the sides (i.e., top <b>68</b>, bottom <b>70</b> and side(s) <b>74</b>) of the IC <b>22</b>.

P-0172[0172] The first type of signal interface <b>80</b> and the second type of signal interface <b>82</b> may be connected to any side (i.e., top <b>68</b>, bottom <b>70</b> and side(s) <b>74</b>) of the IC <b>22</b>. Preferably, both the first type of signal interface <b>80</b> and the second type of signal interface <b>82</b> is connected to the bottom <b>70</b> of the IC <b>22</b>. Alternatively, both the first type of signal interface <b>80</b> and the second type of signal interface <b>82</b> may be connected to the top <b>68</b> or the side(s) <b>74</b> of the IC <b>22</b>. Advantages of this arrangement are similar to that describe in FIG. 6B with reference to the hybrid interface connection.

P-0173[0173] Note that there is some overlap of the frequency signal interfaces described in FIGS. 6A and 6B and the types of signal interfaces described in FIGS. 7A and 7B because the frequency signal interfaces described in FIGS. 6A and 6B necessarily have some type of signal interface, such as those described in FIGS. 7A and 7B. For example, in FIG. 6A, the first (high) frequency signal interface <b>76</b> is preferably a capacitive type of signal interface, and the second (low) frequency signal interface <b>78</b> is preferably a conductive type of signal interface. In this example, each type of signal interface carries signals at different frequencies. Therefore, by this notation and by this example, various combinations of FIGS. 6A, 6B, <b>7</b>A and <b>7</b>B are possible and within the scope of the present description.

P-0174[0174]FIGS. 8A, 8B, <b>8</b>C and <b>8</b>D illustrate cross-sectional views of the IC <b>22</b>, as shown in FIGS. 4C and 5, having signal <b>48</b> and/or power <b>46</b> connections located outside, flush with, recessed or inside, respectively, the semiconductor package <b>62</b> representing the package design system <b>16</b> accordance with the preferred embodiments of the present invention. Preferably, the IC <b>22</b> is a semiconductor package <b>62</b> formed as a level two design, as shown in FIG. 4C above. Alternatively, the IC <b>22</b> may be formed as any level design, as shown in FIGS. 4A, 4B, <b>4</b>C, <b>4</b>D and <b>4</b>E, or any combination thereof. Note that the semiconductor die <b>58</b> and the semiconductor substrate <b>60</b>, as shown in FIG. 4C, are both not shown in each of FIGS. 8A, 8B, <b>8</b>C and <b>8</b>D for the sake of clarity in these four figures.

P-0175[0175]FIGS. 8A, 8B, <b>8</b>C and <b>8</b>D each have features in common including the semiconductor package <b>62</b> (including the top <b>68</b>, the bottom <b>70</b>, the sides <b>72</b> and <b>74</b>), the IC signal connection <b>48</b>, the IC power connection <b>46</b>, the signal connection <b>26</b> and the power connection <b>24</b>, as described above. The IC power connection <b>46</b> and the signal connection <b>26</b> are the same as described above.

P-0176[0176] The semiconductor package <b>62</b> has a predetermined thickness <b>88</b>. The predetermined thickness <b>88</b> may have any value and may be different on one or more sides of the semiconductor package <b>62</b>. The semiconductor package <b>62</b> may be formed of any appropriate material. Preferably, the value of the predetermined thickness <b>88</b> is appropriate for microprocessors using plastic or ceramic materials for the semiconductor package <b>62</b>. Preferably, the value of the predetermined thickness <b>88</b> is the same on all sides of the semiconductor package <b>62</b>.

P-0177[0177] The IC <b>22</b> may have mechanical features (not shown) that permit the IC <b>22</b> to be aligned and/or attached to another structure including, without limitation, a PCB, a connector, forming a cover, a socket or a frame, a conductor, another IC, and the like. The mechanical features may be formed as separate parts that are attached to the IC <b>22</b> or integrally formed with the IC <b>22</b>. The mechanical features include, without limitation, pins, ridges, posts, pegs, bumps, and the like extending beyond one or more surfaces of the IC <b>22</b>, and/or holes, recesses, troughs, and the like extending into one or more surfaces of the IC <b>22</b>. The mechanical features may form fasteners themselves or may cooperate with separate fasteners to aligned and/or attach the IC <b>22</b>.

P-0178[0178] The IC signal connection <b>48</b> includes signal contacts <b>90</b>. The signal contacts <b>90</b> provide any type of path that permits the signals on the signal connection <b>26</b> to be received by the IC <b>22</b> and/or to be transmitted by the IC <b>22</b>. Hence, the signal contacts <b>90</b> are compatible with the various types of signal interfaces, as shown in the table <b>84</b> in FIGS. 7A and 7B, including, without limitation, conductive, capacitive, inductive, optical, transmission line and wireless. Depending on the type of signal interface employed, the signal contacts <b>90</b> have a variety of mechanical and electrical features and characteristics. When the signal contacts are compatible with the conductive type of signal interface, the signal contacts <b>90</b> are preferably made of metal to provide galvanic contacts.

P-0179[0179] When the signal contacts <b>90</b> are compatible with the capacitive type of signal interface, the signal contacts <b>90</b> are preferably made of metal to provide one side of the conductive plates needed for capacitive signal transfer. Alternatively, the dielectric material may be provided with the IC <b>22</b> on the conductive plates. Note that the other side of the conductive plates (not shown) could be provided on a PCB or on a connector, as is described in further detail below.

P-0180[0180] When the signal contacts <b>90</b> are compatible with the inductive type of signal interface, the signal contacts <b>90</b> are preferably made of metal to provide one side of the conductive element needed for inductive signal transfer. Note that the other side of the conductive element (not shown) could be provided on a PCB or on a connector, as will be describe in further detail below.

P-0181[0181] When the signal contacts <b>90</b> are compatible with the optical type of signal interface, the signal contacts <b>90</b> preferably form one or more optical transmitters and/or optical receivers, as will be describe in further detail below.

P-0182[0182] When the signal contacts <b>90</b> are compatible with the transmission line type of signal interface, the signal contacts <b>90</b> preferably forms a transmission line interface to provide for a proper impedance match between the signal connection <b>26</b> outside of the IC <b>22</b> and the signal connection (not shown) inside the IC <b>22</b>.

P-0183[0183] When the signal contacts <b>90</b> are compatible with the wireless type of signal interface, the signal contacts <b>90</b> preferably forms an antenna interface to provide for a proper impedance match between the signal connection <b>26</b> outside of the IC <b>22</b> via an antenna (not shown) and the signal connection (not shown) inside the IC <b>22</b>. Alternatively, the signal contacts <b>90</b> may form and provide the antenna itself.

P-0184[0184] The signal contacts <b>90</b> are electrically coupled to the semiconductor die <b>58</b> (not shown) located inside the semiconductor package <b>62</b>. Conventional methods for providing the electrical coupling include, without limitation, wire bonding, tab bonding, flip-chip bonding, and the like, as are well known in the art of semiconductor manufacturing. Preferably, the electrical coupling between the signal contacts <b>90</b> and the semiconductor die <b>58</b> are made using wires and wire bonds, each being well known in the art of semiconductor manufacturing.

P-0185[0185] The signal contacts <b>90</b> may be located on any side or all sides (i.e., top <b>68</b>, bottom <b>70</b>, sides <b>72</b> and <b>74</b>) of the IC <b>22</b>. Preferably, the signal contacts <b>90</b> are located on the bottom <b>70</b> of the IC <b>22</b> to match the preferred location of the signal connection <b>26</b>, as described above. Alternative locations for the signal contacts <b>90</b> are shown on the top <b>68</b> and the side <b>74</b> of the semiconductor package <b>62</b>. The signal contacts <b>90</b> are illustrated in each figure as simple blocks for the sake of clarity. Practically, the signal contacts <b>90</b> include multiple individual signal contacts corresponding to each signal path. The signal contacts <b>90</b> may have any elevation relative to the semiconductor package <b>62</b>. Preferably, the signal contacts <b>90</b> all have the same elevation relative to the semiconductor package <b>62</b>. This arrangement permits ease of manufacturing of the semiconductor package <b>62</b> and ease of connection to the signal contacts <b>90</b>. Alternatively, the signal contacts <b>90</b> individually may have different elevations relative to the package <b>62</b> to accommodate various desired engineering considerations. The signal contacts <b>90</b> may have any shape, size, pitch, material, and the like. Shapes include, without limitation, square, rectangular, round, oval, and the like. Preferably, the size is in the 0.5 to 1.0 mm by 0.5 to 1.0 mm square range. Preferably, the material is a galvanic material.

P-0186[0186] The IC power connection <b>46</b> includes conductive power contacts <b>92</b> formed of metal. The power contact provides any type of path that permits the power on the power connection <b>24</b> to be delivered to the IC <b>22</b>. The power contacts <b>92</b> are coupled to the semiconductor die <b>58</b> (not shown) located inside the semiconductor package <b>62</b>. Preferably, the electrical coupling between the power contacts <b>92</b> and the semiconductor die <b>58</b> are made using wires and wire bonds, each being well known in the art of IC package design. Preferably, the power contacts <b>92</b> are generally larger in size than the signal contacts <b>90</b>, and the electrical coupling between the power contacts <b>92</b> and the semiconductor die <b>58</b> is heavier than the electrical coupling between the signal contacts <b>90</b> and the semiconductor die <b>58</b>. This construction advantageously permits more current to be routed through the power contact <b>92</b> to the semiconductor die <b>58</b> than through the signal contacts <b>90</b> to the semiconductor die <b>58</b>.

P-0187[0187] The power contacts <b>92</b> may be located on any side or all sides (i.e., top <b>68</b>, bottom <b>70</b>, sides <b>72</b> and <b>74</b>) of the IC <b>22</b>. Preferably, the power contacts <b>92</b> are located on the side(s) <b>72</b> of the IC <b>22</b> to match the preferred location of the power connection <b>24</b>, as described above and to free up more contacts on the IC that may be used for signal and other non-power applications, if desired. Alternate locations for the power contacts <b>92</b> are shown on the top <b>68</b> and the bottom <b>70</b> of the semiconductor package <b>62</b>. Locating the power contacts on the side(s) <b>72</b> of the IC <b>22</b> significantly reduces the force per signal contact per square area along the Z-axis on the bottom <b>70</b> of the IC <b>22</b> because the force per power contact is in the X axis and Y axis. Locating the power contacts on the top <b>68</b> of the IC <b>22</b> significantly reduces the force per signal contact per square area along the Z-axis on the bottom <b>70</b> of the IC <b>22</b> because less contact force is needed when the signal contacts <b>90</b> and the power contacts <b>92</b> are distributed on opposite sides of the IC <b>22</b>. The power contacts <b>92</b> are illustrated in each figure as simple blocks for the sake of clarity. Practically, the power contacts <b>92</b> include multiple individual power contacts and ground contacts corresponding to each power path and ground path, as described with reference to FIG. 1.

P-0188[0188] The power contacts <b>92</b> may have any elevation relative to the semiconductor package <b>62</b> and preferably, they all have the same elevation relative to the semiconductor package <b>62</b>. This arrangement permits ease of manufacturing of the semiconductor package <b>62</b> and ease of connection to the power contacts <b>92</b>. Alternatively, the power contacts <b>92</b> individually may have different elevations relative to the semiconductor package <b>62</b> to accommodate various engineering considerations, if appropriate.

P-0189[0189]FIG. 8A illustrates that the signal contacts <b>90</b> and/or the power contacts <b>92</b> are located outside the semiconductor package <b>62</b>. In this case, the signal contacts <b>90</b> and/or the power contacts <b>92</b> are raised above the outer surface of the semiconductor package <b>62</b> by a predetermined height <b>94</b>. The predetermined height <b>94</b> of the signal contacts <b>90</b> and/or the power contacts <b>92</b> may have any value and may be different on one or more sides of the semiconductor package <b>62</b>. Preferably, the value of the predetermined height <b>94</b> is appropriate for microprocessors using plastic or ceramic materials for the semiconductor package <b>62</b>. Preferably, the value of the predetermined height <b>94</b> of the signal contacts <b>90</b> and/or the power contacts <b>92</b> is the same on all sides of the semiconductor package <b>62</b>.

P-0190[0190]FIG. 8B illustrates that the signal contacts <b>90</b> and/or the power contacts <b>92</b> are located flush with the semiconductor package <b>62</b>. In this case, the signal contacts <b>90</b> and/or the power contacts <b>92</b> are even with the outer surface of the semiconductor package <b>62</b>. FIG. 8C illustrates that the signal contacts <b>90</b> and/or the power contacts <b>92</b> are located partially recessed inside corresponding indentations <b>98</b> formed in the semiconductor package <b>62</b>. In this case, the signal contacts <b>90</b> and/or the power contacts <b>92</b> are recessed below the outer surface of the semiconductor package <b>62</b> by a predetermined height <b>96</b>. The predetermined height <b>96</b> of the signal contacts <b>90</b> and/or the power contacts <b>92</b> may have any value and may be different on one or more sides of the semiconductor package <b>62</b>. Preferably, the value of the predetermined height <b>96</b> is appropriate for microprocessors using plastic or ceramic materials for the semiconductor package <b>62</b>. Preferably, the value of the predetermined height <b>96</b> of the signal contacts <b>90</b> and/or the power contacts <b>92</b> is the same on all sides of the semiconductor package <b>62</b>. The recesses advantageously reduce contamination and/or damage of the signal contacts <b>90</b> and/or the power contacts <b>92</b>. The recesses may also provide mechanical alignment or attachment features for the power connection <b>24</b> and/or signal connection <b>26</b>.

P-0191[0191]FIG. 8D illustrates that the signal contacts <b>90</b> and/or the power contacts <b>92</b> are located inside the semiconductor package <b>62</b>. In this case, the signal contacts <b>90</b> and/or the power contacts <b>92</b> are disposed inside an inner surface of the semiconductor package <b>62</b>. This arrangement advantageously eliminates contamination and/or damage of the signal contacts <b>90</b> and/or the power contacts <b>92</b>.

P-0192[0192] The IC signal connection <b>48</b> includes a signal package interface <b>100</b>. The signal package interface <b>100</b> is any type of interface that permits the signal contacts <b>90</b> located inside the semiconductor package <b>62</b> to operate with the signal connection <b>26</b> located outside the semiconductor package <b>62</b>. The signal package interface <b>100</b> may be formed as a separate part from the semiconductor package <b>62</b> and then mechanically joined to the semiconductor package <b>62</b> using various methods such as insert molding, over molding, snaps, interference press fit, adhesive, and the like. The separate part may be formed of the same or a different material as the semiconductor package <b>62</b>. Alternatively, the signal package interface <b>100</b> may be formed as an integral part of the semiconductor package <b>62</b>. The signal package interface <b>100</b> is illustrated in each figure as simple blocks for the sake of clarity. Practically, the signal package interface <b>100</b> may include one or more individual signal package interface <b>100</b> corresponding to each signal path.

P-0193[0193] The mechanical and electrical features and characteristics of the signal package interface <b>100</b> depend on the type of signal interface used, as shown in the table <b>84</b> in FIGS. 7A and 7B. For example, a capacitive type of signal interface may require that the signal package interface <b>100</b> be formed as a dielectric material. In this case, the signal contacts <b>90</b> provide one side of the conductive plates required for capacitive signal transfer. The second side of the conductive plates (not shown) is on the outside of the semiconductor package <b>62</b> and may be provided on a PCB or on a connector. The signal package interface <b>100</b> forms the dielectric material having an appropriate dielectric constant to permit capacitive signal transfer between the conductive plates of signals having appropriate frequencies, amplitudes, etc.

P-0194[0194] For example, an optical type of signal interface may require that the signal package interface <b>100</b> be formed as an optical lens. In this case, the signal contacts <b>90</b> form an optical transmitter and/or an optical receiver. The signal package interface <b>100</b> forms the optical lens to channel modulated signals in the form of light waves through the semiconductor package <b>62</b>. Alternatively, the signal package interface <b>100</b> may form one or more holes extending through the semiconductor package <b>62</b> to permit the signal connection <b>26</b>, formed as optical fibers, to be mechanically aligned with the optical transmitter and/or the optical receiver inside the IC <b>22</b>. In this alternative, the one or more holes may also secure the optical fibers to the IC <b>22</b>. By another example, a transmission line or wireless type of signal interface may require that the signal package interface <b>100</b> be formed as an impedance matching device.

P-0195[0195] The IC power connection <b>46</b> includes a power package interface <b>102</b>. The power package interface <b>102</b> is any type of interface that permits the power contacts <b>92</b> located inside the semiconductor package <b>62</b> to operate with the power connection <b>24</b> located outside the semiconductor package <b>62</b>.

P-0196[0196] The power package interface <b>102</b> may be formed as a separate part from the semiconductor package <b>62</b> and then mechanically joined to the semiconductor package <b>62</b> such as by insert molding, over molding, snaps, interference press fit, adhesive, and the like. The separate part may be formed of the same or a different material as the semiconductor package <b>62</b>. Alternatively, the power package interface <b>102</b> may be formed as an integral part of the semiconductor package <b>62</b>. The power package interface <b>102</b> is illustrated in each figure as simple blocks for the sake of clarity. Practically, the power package interface <b>102</b> may include one or more individual power package interface <b>102</b> corresponding to each signal path. The mechanical and electrical features and characteristics of the power package interface <b>102</b> depend on the type of method used to delivery power from the power connection <b>24</b> to the IC <b>22</b> via the power contacts <b>92</b>.

P-0197[0197] In FIGS. 8A, 8B, <b>8</b>C and <b>8</b>D, the features are illustrated therein are for illustration and not for limitation, and any feature from any one of the Figures may be combined with any feature from another of the Figures to provide multiple combinations of features. For example, the signal contacts <b>90</b> located inside the semiconductor package <b>62</b>, as shown in FIG. 8D may be combined with the power contacts <b>92</b> located outside, flush with, or recessed in the semiconductor package <b>62</b>, as shown in FIGS. 8A, 8B and <b>8</b>C, respectively.

P-0198[0198]FIGS. 9A, 9B and <b>9</b>C illustrate a plan view of the IC <b>22</b>, as shown in FIGS. 8A, 8B, <b>8</b>C or <b>8</b>D and FIG. 5, having signal contacts <b>90</b> and/or power contacts <b>92</b> located on the top <b>68</b>, bottom <b>70</b> and/or side(s) <b>72</b>, respectively, of the IC <b>22</b> representing the package design system <b>16</b> in accordance with the preferred embodiments of the present invention. In each of the three figures, the signal contacts <b>90</b> and/or power contacts <b>92</b> are represented as equally spaced squares for illustration purposes only. Practically, the signal contacts <b>90</b> and/or power contacts <b>92</b> may have any appropriate size, shape, thickness, dimension, pitch, etc. Hence, the arrangement of the signal contacts <b>90</b> and/or power contacts <b>92</b> on one or more of the top <b>68</b>, bottom <b>70</b> and/or side(s) <b>72</b> of the IC <b>22</b> provides multiple embodiments that are within the scope of the specification.

P-0199[0199] More particularly, FIG. 9A illustrates the top <b>68</b> of the IC <b>22</b> being available to carry signal contacts <b>90</b> and/or power contacts <b>92</b>. FIG. 9B illustrates the bottom <b>70</b> of the IC <b>22</b> being available to carry signal contacts <b>90</b> and/or power contacts <b>92</b>. In the preferred embodiments of the present invention, the signal contacts <b>90</b> are located on the bottom <b>70</b> of the IC <b>22</b>, as shown in FIG. 9B. FIG. 9C illustrates the side(s) <b>72</b> of the IC <b>22</b> being available to carry signal contacts <b>90</b> and/or power contacts <b>92</b>. In the preferred embodiments of the present invention, the power contacts <b>92</b> are located on the side(s) <b>72</b> of the IC <b>22</b>, as shown in FIG. 9C.

P-0200[0200]FIGS. 10A, 10B and <b>10</b>C illustrate more limited examples of the arrangement and location of the signal contacts <b>90</b> and/or power contacts <b>92</b> on one or more of the top <b>68</b>, bottom <b>70</b> and/or side(s) <b>72</b> of the IC <b>22</b>. FIG. 10A illustrates an outer portion <b>104</b> of the top <b>68</b> of the IC <b>22</b> being available to carry signal contacts <b>90</b> and/or power contacts <b>92</b>. An inner portion <b>106</b> of the IC <b>22</b> is available to receive a heat sink, a heat spreader, or the like. Preferably, the heat sink is in mechanical contact with the IC <b>22</b> to provide a thermal path for heat to be drawn away from the IC <b>22</b>.

P-0201[0201]FIG. 10B illustrates an outer portion <b>108</b> and an inner portion <b>110</b> of the top <b>68</b> of the IC <b>22</b> being available to carry signal contacts <b>90</b> and/or power contacts <b>92</b>. Preferably, the outer portion <b>108</b> carries the power contacts <b>92</b> and the inner portion <b>110</b> carries the signal contacts <b>90</b>. This arrangement is advantageous when the power contacts <b>92</b> and the signal contacts <b>90</b> have different types of signals interfaces, as shown in table <b>84</b> of FIGS. 7A and 7B, such as, for example, when the power contacts <b>92</b> are conductive and the signal contacts <b>90</b> are capacitive.

P-0202[0202]FIG. 10C illustrates an outer portion <b>112</b> and an inner portion <b>114</b> of the top <b>68</b> of the IC <b>22</b> each being available to carry signal contacts <b>90</b> and/or power contacts <b>92</b>. Preferably, the outer portion <b>112</b> carries the power contacts <b>92</b> and the inner portion <b>114</b> carries the signal contacts <b>90</b>.

P-0203[0203] In FIG. 11, the connector <b>112</b> includes appropriate electrical and mechanical features and characteristics to provide an electrical interface between the signal connection <b>26</b> and/or power connection <b>24</b> and the IC <b>22</b>. The connector <b>112</b> is compatible with the various types of signal interfaces described with table <b>84</b> in FIGS. 7A and 7B.

P-0204[0204] According to the preferred embodiments of the present invention, the connector <b>112</b> carries the voltage regulator module <b>38</b> and/or the decoupling capacitance <b>42</b>, as is described in further detail below. Since the connector <b>112</b> carries the IC <b>22</b>, the voltage regulator module <b>38</b> and/or the decoupling capacitance <b>42</b> are located as close to the IC <b>22</b> as possible, thereby minimizing the length of the power connection <b>24</b>. Minimizing the length of the power connection <b>24</b>, in turn, minimizes the impedance and inductance of the power connection <b>24</b> to permit the voltage regulator module <b>38</b> and/or the decoupling capacitance <b>42</b> to deliver low voltage, narrow voltage margin and high current to a high performance IC <b>22</b>.

P-0205[0205] The connector <b>112</b> may have various forms, shapes, and sizes and be made of various materials, depending on various engineering considerations. The various forms, shapes, sizes are represented in FIG. 11 with the dashed lines <b>120</b>, <b>122</b> and <b>124</b> on side <b>74</b> of the IC <b>22</b> and the dashed lines <b>126</b>, <b>128</b> and <b>130</b> on the side <b>72</b> of the IC <b>22</b>. Dashed lines <b>120</b>, <b>122</b> and <b>124</b> horizontally align with dashed lines <b>126</b>, <b>128</b> and <b>130</b>, respectively. The dashed lines represent various places where the connector <b>112</b> may end to form a particular form, shape or size of a connector <b>112</b>. Note that the dashed lines are for illustration purposes only and should not be interpreted to limit the scope of the connector <b>112</b>.

P-0206[0206] For example, an upper part of the connector <b>112</b> that is located above the top <b>68</b> of the IC <b>22</b> may extend only down to dashed lines <b>120</b> and <b>126</b> essentially forming a cover, otherwise known as a plate or cap, over the IC <b>22</b>. In this case, the connector <b>112</b>, formed as a cover, has a bottom surface that is located coplanar with or above the top <b>68</b> of the IC <b>22</b>. The connector <b>112</b>, formed as a cover, may further extend down the sides <b>72</b> and <b>74</b> of the IC <b>22</b> to dashed lines <b>122</b> and <b>128</b>. In this case, the connector <b>112</b>, formed as a cover, has a bottom surface that is located between the top <b>68</b> and the bottom <b>70</b> of the IC <b>22</b>. The connector <b>112</b>, formed as a cover, may further extend down the sides <b>72</b> and <b>74</b> of the IC <b>22</b> to dashed lines <b>124</b> and <b>130</b>. In this case, the connector <b>112</b>, formed as a cover, has a bottom surface that is located coplanar with or below the bottom <b>70</b> of the IC <b>22</b>, and may extend to a top surface of the PCB <b>114</b>, if present. Note that the connector <b>112</b>, formed as a cover, is shown to extend beyond each side <b>72</b> and <b>74</b> of the IC <b>22</b>, but should not be interpreted as being limited as such. Alternatively, the connector <b>112</b>, formed as a cover, may be flush with or inside the sides <b>72</b> and <b>74</b> of the IC <b>22</b>. FIG. 12A illustrates a more detailed illustration of the connector <b>112</b>, formed as a cover.

P-0207[0207] By another example, an lower part of the connector <b>112</b> that is located below the bottom <b>70</b> of the IC <b>22</b> may extend only up to dashed lines <b>124</b> and <b>130</b> essentially forming a socket, otherwise known as a cup or pocket, under the IC <b>22</b>. In this case, the connector <b>112</b>, formed as a socket, has a top surface that is located coplanar with or below the bottom <b>70</b> of the IC <b>22</b>. The connector <b>112</b>, formed as a socket, may further extend up the sides <b>72</b> and <b>74</b> of the IC <b>22</b> to dashed lines <b>122</b> and <b>128</b>. In this case, the connector <b>112</b>, formed as a socket, has a top surface that is located between the bottom <b>70</b> and the top <b>68</b> of the IC <b>22</b>. The connector <b>112</b>, formed as a socket, may further extend up the sides <b>72</b> and <b>74</b> of the IC <b>22</b> to dashed lines <b>120</b> and <b>126</b>. In this case, the connector <b>112</b>, formed as a socket, has a top surface that is located coplanar with or above the top <b>68</b> of the IC <b>22</b>. Note that the connector <b>112</b>, formed as a socket, is shown to extend beyond each side <b>72</b> and <b>74</b> of the IC <b>22</b>, but should not be interpreted as being limited as such. Alternatively, the connector <b>112</b>, formed as a socket, may be flush with or inside the sides <b>72</b> and <b>74</b> of the IC <b>22</b>. FIG. 12B illustrates a more detailed illustration of the connector <b>112</b>, formed as a socket.

P-0208[0208] By still another example, a middle part of the connector <b>112</b> that is located around the sides <b>72</b> and <b>74</b> of the IC <b>22</b> essentially forming a frame, otherwise known as a ring or border, around a perimeter the IC <b>22</b>. In this case, the connector <b>112</b>, formed as a frame, may have a top surface that is located above the top <b>68</b> of the IC <b>22</b>, or between the top <b>68</b> and bottom <b>70</b> of the IC <b>22</b>, as represented by dashed lines <b>122</b> and <b>128</b>. The connector <b>112</b>, formed as a frame, may have a bottom surface that is located below the bottom <b>70</b> of the IC <b>22</b>, or between the top <b>68</b> and bottom <b>70</b> of the IC <b>22</b>, as represented by dashed lines <b>124</b> and <b>130</b>, and may extend to a top surface of the PCB <b>114</b>, if present. FIG. 12C illustrates a more detailed illustration of the connector <b>112</b>, formed as a frame.

P-0209[0209] These three examples of the connector <b>112</b>, formed as a cover, a frame or a socket, illustrate examples of the various forms, shapes and sizes that the connector <b>112</b> can have. Note that the descriptions in the examples above blend into each other. For example, the description of the cover blends into the description of the frame, and the description of the frame blends into the description of the socket. Hence, these examples illustrate that the connector <b>112</b> may be located on any one or more sides of the IC <b>22</b>, without being limited to the illustration in FIG. 11.

P-0210[0210] The connector <b>112</b> may have any suitable material including, without limitation, plastic, metal, and may have any suitable characteristics including, without limitation, being conductive or nonconductive. Preferably, the connector is formed of a nonconductive, plastic material and carries appropriate signal contacts (not shown) and power contacts that operate with the corresponding signal contacts <b>90</b> and power contacts <b>92</b>, respectively, carried by the IC <b>22</b>. Alternatively, the connector <b>112</b> may be formed as a circuit board carrying the voltage regulator module <b>38</b> and/or the decoupling capacitance <b>42</b>, as shown in FIG. 2 above. Alternatively, the connector <b>112</b> may be formed as the decoupling capacitance <b>42</b>, itself, having an integral capacitance structure. These two alternatives are described in further detail below. Alternatively, the connector <b>112</b> may be formed as an assembly of discrete parts providing the function of the voltage regulator module <b>38</b> and/or the decoupling capacitance <b>42</b>, without having what might be considered a conventional housing.

P-0211[0211] The connector <b>112</b> may have mechanical features (not shown) that permit the connector <b>112</b> to be aligned and/or attached to another structure including, without limitation, the circuit board <b>114</b>, another connector <b>140</b> (illustrated in FIGS. 13 and 14), forming a cover, a socket or a frame, the conductor <b>116</b>, and the like. The mechanical features may be formed as separate parts that are attached to the connector <b>112</b> or integrally formed with the connector <b>112</b>. The mechanical features include, without limitation, pins, ridges, posts, pegs, bumps, and the like extending beyond one or more surfaces of the connector <b>112</b>, and/or holes, recesses, troughs, and the like extending into one or more surfaces of the connector <b>112</b>. The mechanical features may form fasteners themselves, such as snaps, clips, and the like, or may cooperate with separate fasteners to aligned and/or attach the connector <b>112</b>.

P-0212[0212] The signal connection <b>26</b> and/or the power connection <b>24</b> are electrically and mechanically coupled to the connector <b>112</b> in such a manner as to align the signal connection <b>26</b> and/or the power connection <b>24</b> with the preferred and/or alternative locations on the IC <b>22</b>, as described above. The signal connection <b>26</b> and/or the power connection <b>24</b> may be formed as a conductor <b>116</b> or as a PCB trace <b>118</b>, as described above.

P-0213[0213] When the signal connection <b>26</b> and the power connection <b>24</b> are formed as a conductor <b>116</b>, the connector <b>112</b>, a PCB <b>114</b> may not be used at all or may be used only to provide mechanical stability for the connector <b>112</b>. In this case, the connector <b>112</b> may be considered as a holder for the IC <b>22</b> and for the conductors <b>116</b> that carry the signals and the power to the IC <b>22</b>. If the PCB is present to provide the mechanical stability for the connector <b>112</b>, then the connector <b>112</b> may appear to be somewhat suspended above the circuit board.

P-0214[0214] The circuit board <b>114</b> may be used to route the signal connection <b>26</b> and/or the power connection <b>24</b> to and/or from the IC <b>22</b> using the conductive traces <b>118</b>. When the circuit board <b>114</b> is used, an IC to circuit board signal and/or power interface <b>132</b> preferably is used to provide an appropriate connection between the IC <b>22</b> and the cicruit board <b>114</b>. Preferably, the interface <b>132</b> is located between the bottom <b>70</b> of the IC <b>22</b> and the top of the circuit board <b>114</b>. The circuit board <b>114</b> may have various types of mechanical features to align and/or secure the IC <b>22</b>, the connector <b>112</b>, and/or the conductor <b>116</b> including, without limitation, holes, recesses, and the like, that mechanically cooperate with corresponding mechanical features on the mating structure or that use separate fasteners, such as pins, screws, pegs, snaps, clips, and the like to align and/or secure the mating structure.

P-0215[0215] The interface <b>132</b> may be used alone or in combination with the connector <b>112</b>. When the interface <b>132</b> is used in combination with the connector <b>112</b>, the connector <b>112</b> is preferably formed as a socket or a frame to help hold and align the interface <b>132</b> against the IC <b>22</b>. In this case, the interface <b>132</b> is located in an inner portion of the connector <b>112</b>, formed as a socket or frame, with the socket or frame forming an outer portion of the connector <b>112</b> at the perimeter of the interface <b>132</b>. The interface <b>132</b> may be formed as a separate part from the IC <b>22</b> or integrally formed with the IC <b>22</b> as a single unit. When the interface <b>132</b> is formed as a separate part from the IC <b>22</b>, the interface <b>132</b> may be separate from the IC <b>22</b> or attached to the IC <b>22</b>. Preferably, the interface <b>132</b> is formed as a separate part and is separate from the IC <b>22</b>. When the interface <b>132</b> is integrally formed with the IC <b>22</b> as a single unit, the interface <b>132</b> may be formed as the semiconductor substrate <b>60</b>, as shown in FIG. 4B, as the side of the semiconductor package <b>62</b>, as shown in FIGS. 4C and 8D, or as the PCB <b>64</b> or <b>114</b>, as shown in FIGS. 4D or <b>4</b>E, for example. The interface <b>132</b> may take a variety of shapes and sizes and be formed from a variety of materials. Various shapes of the interface <b>132</b> as a whole or as individual portions may include round, square, multi-sided shapes and the like, and the interface <b>132</b> may be flat or may be bent or formed to have a particular shape.

P-0216[0216] Material properties of the interface <b>132</b> may include solids, fluids, pastes, gels or gases. The material of the interface <b>132</b> may have any level of hardness including rigid, flexible, and compressible. Interfaces <b>132</b> that are flexible advantageously permit better compliance with manufacturing variations in the IC package and/or the circuit board <b>114</b>, and easier manufacturing. In some applications, it may be desirable to adjust the characteristics of the material, such as the dielectric constant, of the interface <b>132</b> using temperature, pressure or the like. The interface <b>132</b> may be formed as a single or multiple layers of material using manufacturing techniques including, without limitation, a layered build-up approach, a spray or vacuum deposited approach, an extruded approach, and the like. The interface <b>132</b> may be formed of the same material or different materials. In the case of different materials, a first material forms the carrier and a second material forms the signal and/or power path. The second material, forming the signal and/or power path, may be attached to the first material in ways such as press fit, insert molded, over molded, stitched, and the like.

P-0217[0217] The interface <b>132</b>, the signal contacts <b>90</b> and/or the power contact <b>92</b> on the IC <b>22</b>, and corresponding signal contact and/or power contacts on the PCB <b>64</b> or <b>114</b>, the conductor <b>116</b>, the connector <b>112</b> or the remote circuit <b>52</b> may be arranged in a variety of ways. For example, the various arrangements of the contacts and the interface <b>132</b> may include, without limitation, contact to interface <b>132</b>, contact to interface <b>132</b> to contact, interface <b>132</b> to contact to interface <b>132</b>, interface <b>132</b> to interface <b>132</b>, contact to interface <b>132</b> to interface <b>132</b> to contact, and contact to interface <b>132</b> to contact to interface <b>132</b> to contact, and the like. Hence, the interface <b>132</b> may be formed on the outer surface of the IC <b>22</b>, PCB <b>64</b> or <b>114</b>, the conductor <b>116</b>, the connector <b>112</b> or the remote circuit <b>52</b>, or be formed as an inner layer thereof. Electrically, the interface <b>132</b> may support any type of signaling transfer between the IC <b>22</b> and the remote circuit <b>52</b> including, without limitation, single-ended serial, single-ended parallel, differential serial and differential parallel signaling. Further, the interface <b>132</b> and/or the signal contacts <b>90</b> and/or the power contacts, <b>92</b> and are designed to optimize electrical engineering considerations including inductance, capacitance, cross-talk, propagation delay, skew and impedance.

P-0218[0218] The interface <b>132</b> may alternatively be used as an interface between the IC <b>22</b> and the conductor <b>116</b>, the connector <b>112</b> and another IC in an analogous manner as described with reference to interfacing to the circuit board <b>114</b>. The interface <b>132</b> is compatible with the various types of signal interfaces listed in table <b>84</b> as shown in FIGS. 7A and 7B. For example, when the interface <b>132</b> is compatible with the conductive type of signal interface, the interface <b>132</b> preferably forms a nonconductive material carrying multiple discrete conductive segments that correspond to and align with the location of the signal contacts <b>90</b> that are compatible with the conductive type of signal interface. When the interface <b>132</b> is compatible with the capacitive type of signal interface, the interface <b>132</b> preferably forms a dielectric material having a suitable dielectric constant and a suitable predetermined thickness. In this case, the signal contacts <b>90</b> are preferably made of metal to provide one side of the conductive plates needed for capacitive signal transfer. The other side of the conductive plates (not shown) would be provided on the circuit board <b>114</b>.

P-0219[0219] When the interface <b>132</b> is compatible with the inductive type of signal interface, the interface <b>132</b> preferably forms a nonconductive material having a suitable predetermined thickness. In this case, the interface <b>132</b> provides an optimal separation between one conductive element (not shown) in the IC <b>22</b> and another conductive element (not shown) in or on the circuit board. When the interface <b>132</b> is compatible with the optical type of signal interface, the interface <b>132</b> preferably forms an optical transmission channel, such as a lens, adapted to carry optical signals in the form of modulated light waves. Alternatively or in combination with the optical transmission channel, the interface <b>132</b> may be used to align and/or focus the optical signals between the IC <b>22</b> and the circuit board <b>114</b>. When the interface <b>132</b> is compatible with the transmission line type of signal interface, the interface <b>132</b> preferably forms a transmission line interface or channel to provide for a proper impedance match between the IC <b>22</b> and the circuit board <b>114</b>. When the interface <b>132</b> is compatible with the wireless type of signal interface, the interface <b>132</b> preferably forms a radio frequency (RF) channel suitable for carrying the RF signal from the IC <b>22</b> to the circuit board <b>114</b>.

P-0220[0220] The interface <b>132</b>, in cooperation with the package design system <b>16</b>, advantageously permits the operating frequency of the microprocessor to increase without degrading the integrity of the signal. For example, the interface <b>132</b>, forming a dielectric material, and the package design system <b>16</b>, forming conductive plates as the signal contacts <b>90</b>, together provide a capacitive type of signal interface. In this case the resistance due to inductance, associated with the conductive interconnection between the semiconductor die located inside the microprocessor and the motherboard, is minimized using a capacitive type of signal interface. High frequency signal operation may be transferred without increasing the impedance of the signal path that compromises the integrity of the signal. Hence, this construction maximizes the performance and minimize the cost of interconnection technology used to achieve high-speed digital signal designs.

P-0221[0221]FIG. 12A illustrates the connector <b>112</b>, formed as a cover, wherein the connector <b>112</b> has side parts that extend beyond each side <b>72</b> and <b>74</b> of the IC <b>22</b>, has an upper part that is located above the top <b>68</b> of the IC <b>22</b>, and has a lower part that is located flush with or a little below the bottom <b>70</b> of the IC <b>22</b>. Preferably, the connector <b>112</b>, formed as a cover, surrounds all four sides (<b>72</b>, <b>74</b>, one side facing out of the page, one side facing into the page) of the IC <b>22</b>. The connector <b>112</b>, formed as a cover, is beneficial when the IC <b>22</b> is mounted directly on the PCB <b>114</b>.

P-0222[0222]FIG. 12B illustrates an elevation view of the IC <b>22</b>, as shown in FIG. 11, located in a connector <b>112</b> formed as a socket in accordance with the preferred embodiments of the present invention. FIG. 12B illustrates the connector <b>112</b>, formed as a socket, wherein the connector <b>112</b> has side parts that extend beyond each side <b>72</b> and <b>74</b> of the IC <b>22</b>, has a lower part that is located below the bottom of the IC <b>22</b>, and has an upper part that is located flush with or a little above the top <b>68</b> of the IC <b>22</b>. Preferably, the connector <b>112</b>, formed as a socket, surrounds all four sides (<b>72</b>, <b>74</b>, one side facing out of the page, one side facing into the page) of the IC <b>22</b>. Preferably, the connector <b>112</b>, formed as a socket, is mounted on the PCB <b>114</b> and carries the IC to PCB signal and/or power interface <b>132</b>. The connector <b>112</b>, formed as a socket, is beneficial when the socket is directly mounted on the PCB <b>114</b> and the socket carries the IC <b>22</b>.

P-0223[0223]FIG. 12C illustrates an elevation view of the IC <b>22</b>, as shown in FIG. 11, located in a connector <b>112</b> formed as a frame in accordance with the preferred embodiments of the present invention. FIG. 12C illustrates the connector <b>112</b>, formed as a frame, wherein the connector <b>112</b> has side parts that extend beyond each side <b>72</b> and <b>74</b> of the IC <b>22</b>, has a lower part that is located flush with or a little below the bottom of the IC <b>22</b>, and has an upper part that is located flush with or a little above the top <b>68</b> of the IC <b>22</b>. The connector <b>112</b>, formed as a frame, is beneficial when the IC <b>22</b> is directly mounted on the PCB <b>114</b>.

P-0224[0224]FIG. 13 illustrates an elevation view of the IC <b>22</b>, as shown in FIG. 11, coupled to the remote circuit <b>52</b> located in a connector <b>112</b> or on PCB <b>114</b> in accordance with the preferred embodiments of the present invention. The remote circuit <b>52</b> includes a remote circuit signal connection <b>134</b> and a remote circuit power connection <b>136</b>, and has a top <b>144</b>, a bottom <b>146</b>, and sides <b>148</b> and <b>150</b>. A connector <b>140</b> is disposed on one or more sides of the remote circuit <b>52</b>. The remote circuit <b>52</b> may be carried by the connector <b>140</b> or may be mounted on a PCB <b>114</b>. A remote circuit to PCB signal and/or power interface <b>138</b> provides paths to route signals and/or power, respectively, between the PCB <b>114</b> and the remote circuit <b>52</b>. The remote circuit <b>52</b>, the connector <b>140</b>, the interface <b>138</b>, the PCB <b>114</b>, the remote circuit signal connection <b>134</b> and the remote circuit power connection <b>136</b> have features, characteristics, functions and operation analogous to the IC <b>22</b>, the connector <b>112</b>, the interface <b>132</b>, the PCB <b>114</b>, the integrated circuit signal connection <b>48</b> and the integrated circuit power connection <b>46</b>, respectively, as described above.

P-0225[0225] In addition, the signal connection <b>26</b>, formed as conductor <b>116</b> or as a PCB trace <b>118</b>, may transfer signals between any one or more of the top <b>68</b>, the bottom <b>70</b>, and the side(s) <b>72</b> and <b>74</b> of the IC <b>22</b> and any one or more of the top <b>144</b>, the bottom <b>146</b>, and the side(s) <b>148</b> and <b>150</b> of the remote circuit <b>52</b>. Preferably, the signal connection <b>26</b> is formed as a PCB trace <b>118</b> and transfers signals between the bottom <b>70</b> of the IC and the bottom <b>146</b> of the remote circuit <b>52</b>.

P-0226[0226] The power connection <b>24</b>, formed as a conductor <b>116</b>, formed as conductor <b>116</b> or as a PCB trace <b>118</b>, may be coupled to the any one or more of the top <b>144</b>, the bottom <b>146</b>, and the side(s) <b>148</b> and <b>150</b> of the remote circuit <b>52</b>. Preferably, the power connection <b>24</b> is formed as a conductor <b>116</b> and couples power to the side(s) <b>148</b> and <b>150</b> of the remote circuit <b>52</b>. Note that the power connection <b>24</b> being coupled to the remote circuit <b>52</b> is an added feature that is not shown in FIGS. 1 and 2 for the sake of clarity of those two figures. Typically, a remote circuit that is active requires power from the power delivery system <b>12</b> and a remote circuit that is passive does not require power from the power delivery system <b>12</b>.

P-0227[0227] The IC <b>22</b> and the remote circuit <b>52</b> may carry the same type or different types of circuits, including, without limitation, microprocessors, digital signal processors (DSPs), memory devices, audio-visual interface devices, user interface devices, and may be active devices and/or passive devices.

P-0228[0228] A break <b>142</b> in the PCB <b>114</b> illustrates that the PCB <b>114</b> for the IC <b>22</b> may be the same or different PCB for the remote circuit <b>52</b>. When the IC <b>22</b> and the remote circuit <b>52</b> are mounted on the same PCB <b>114</b>, then the signal connection <b>26</b> and/or the power connection <b>24</b> may be made via the conductor <b>116</b> or the PCB trace <b>118</b>. When the IC<b>22</b> and the remote circuit <b>52</b> are mounted different PCBs, then the signal connection <b>26</b> and/or the power connection <b>24</b> may be made via the conductor <b>116</b> or via PCB traces <b>1</b><b>18</b> on each PCB with a conductor (not shown) forming a jumper between the PCB traces <b>118</b> on the different PCBs.

P-0229[0229] The connector <b>112</b> may be integrally formed with the connector <b>140</b> as a single connector for both the IC <b>22</b> and the remote circuit <b>52</b>. Alternatively, the connector <b>112</b> and the connector <b>140</b> may be formed as separate parts and then mechanically attached to each other, or used separately. When the parts are mechanically attached to each other, any side of the connector <b>112</b> may be attached to any side of the connector <b>140</b>.

P-0230[0230] The interface <b>132</b> may be integrally formed with the interface <b>138</b> as a single interface for both the IC <b>22</b> and the remote circuit <b>52</b>. Alternatively, the interface <b>132</b> and the interface <b>138</b> may be formed as separate parts and then mechanically attached to each other, or used separately. When the parts are mechanically attached to each other, any side of the interface <b>132</b> may be attached to any side of the interface <b>138</b>.

P-0231[0231] Although FIG. 13 illustrates the IC <b>22</b> and the remote circuit <b>52</b> next to each other in a side-by-side arrangement, FIG. 13 is not intended to be limited to such an arrangement. Practically, the IC <b>22</b> and the remote circuit <b>52</b> may have any physical arrangement relative to each other. For example, the IC <b>22</b> and the remote circuit <b>52</b> may have a stacked arrangement, as shown in further detail in FIG. 14. Further, although FIG. 13 illustrates only two circuits (i.e., the IC <b>22</b> and the remote circuit <b>52</b>), FIG. 13 is not intended to be limited to only two circuits. Practically, any number of ICs and/or remote circuits may operate together using the same features, characteristics, functions and operation as described above between the IC <b>22</b> and the remote circuit <b>52</b>.

P-0232[0232]FIG. 14 illustrates an elevation view of the IC <b>22</b> and the remote circuit <b>52</b>, as shown in FIG. 13, coupled together in a stacked arrangement in accordance with the preferred embodiments of the present invention. FIG. 14 shows connector <b>140</b>, carrying the remote circuit <b>52</b>, being located above or on top of the connector <b>112</b>, carrying the IC <b>22</b>. The signal connection <b>26</b> may be routed to another remote circuit <b>152</b> via the conductor <b>116</b> or via PCB traces (not shown). FIG. 14 shows various signal connections <b>26</b> and/or power connections <b>24</b> that may be possible when the IC <b>22</b> and the remote circuit <b>52</b> are coupled together in the stacked arrangement. The stacked arrangement is advantageous for partner, cluster or master/slave types of ICs that are substantially dedicated to work with each other, but are packaged separately to optimize the cost and/or performance of the individual semiconductor packages. Such partner ICs include, without limitation, microprocessors and memory devices.

P-0233[0233]FIGS. 15, 16, <b>17</b>, <b>18</b>, and <b>19</b> each illustrate an elevation view of the IC <b>22</b> and the remote circuit <b>52</b>, as shown in FIGS. <b>13</b> or <b>14</b>, each having a voltage regulator module <b>38</b> and decoupling capacitance <b>42</b> disposed at various locations in accordance with the preferred embodiments of the present invention. In each of these figures, the IC signal connection <b>46</b>, the IC power connection <b>48</b>, the remote circuit signal connection <b>134</b>, the remote circuit power connection <b>136</b>, the reference numbers for the top, bottom and sides of the IC <b>22</b> and the remote circuit <b>52</b>, and the reference numbers for the six dashed lines for each connector <b>112</b> and <b>140</b> are not shown for the sake of clarity in these figures.

P-0234[0234] The signal connection <b>26</b> and the power connection <b>24</b> are each illustrated as being coupled to one side of the IC <b>22</b> and the remote circuit <b>52</b> for the sake of clarity in these five figures. Practically, the signal connection <b>26</b> and/or the power connection <b>24</b> may be coupled to one or more sides of the IC <b>22</b> and/or the remote circuit <b>52</b>, as described above.

P-0235[0235] These five figures introduce new system blocks including a voltage regulator module <b>154</b> and decoupling capacitance <b>158</b> that are not illustrated in FIGS. 1 and 2 above for the reason stated in the description for FIG. 13. The introduction of the voltage regulator module <b>154</b> and/or the decoupling capacitance <b>158</b> provides synergy with the voltage regulator module <b>38</b> and the decoupling capacitance <b>42</b> by introducing a variety of alternative paths to route the signals and/or power to the IC <b>22</b> and the remote circuit <b>52</b>. Solid lines represent the preferred path and the dashed lines represent alternate paths. This synergy applies to each of the five figures. The synergy relates to the specifications of the remote circuit <b>52</b>, the voltage regulator module <b>154</b>, the decoupling capacitance <b>158</b>, the IC <b>22</b>, the voltage regulator module <b>38</b>, and the decoupling capacitance <b>42</b> in an analogous manner as that described above for the IC <b>22</b>, the voltage regulator module <b>38</b>, and the decoupling capacitance <b>42</b>. The specifications of the IC <b>22</b> and the remote circuit <b>52</b> typically determine whether one or two voltage regulator modules or whether one or two decoupling capacitances are required. The physical proximity of the IC <b>22</b> and the remote circuit <b>52</b> to the voltage regulator modules and the decoupling capacitances is also a factor to minimize the impedance and resulting voltage drop, as described above. Hence, the specifications for the remote circuit <b>52</b> and the IC <b>22</b> may permit the remote circuit <b>52</b> to share the voltage regulator module <b>38</b> and/or the decoupling capacitance <b>42</b> along with the IC <b>22</b>. Otherwise, the remote circuit <b>52</b> must use its own voltage regulator module <b>154</b> and/or the decoupling capacitance <b>158</b>.

P-0236[0236] The voltage regulator module <b>38</b>, the decoupling capacitance <b>42</b>, the voltage regulator module <b>154</b> and the decoupling capacitance <b>158</b> are shown in a particular part of the connector <b>112</b> or <b>140</b> for illustration purposes only and for the sake of clarity of the drawings. As described above with reference to FIG. 11, each of these elements may be located in any part of the connector <b>112</b> or <b>140</b> including, without limitation, the cover, the socket and/or the frame, as shown in FIGS. 12A, 12B and <b>12</b>C.

P-0237[0237]FIG. 15 illustrates an elevation view of the IC <b>22</b> and the remote circuit <b>52</b>, as shown in FIGS. <b>13</b> or <b>14</b>, each having the voltage regulator module <b>38</b> and <b>154</b> and the decoupling capacitance <b>42</b> and <b>158</b> located in the connector <b>112</b> and <b>140</b>, respectively, in accordance with the preferred embodiments of the present invention. The power delivery system <b>12</b> is coupled to the IC <b>22</b> to provide power to the IC <b>22</b>, as described with reference to FIG. 2. As described above with reference to FIG. 2, the preferred path for high voltage, low current power delivery is from the power supply <b>34</b> to the voltage regulator module <b>38</b> via the power connection <b>36</b> using the conductor <b>116</b> or the PCB trace <b>118</b>, then to the decoupling capacitance <b>42</b> as low voltage, high current power via the power connection <b>40</b> using the conductor <b>116</b>, then to the IC <b>22</b> as low voltage, high current power via the power connection <b>44</b> using the conductor <b>116</b>. Also as described with reference to FIG. 2, the voltage regulator module <b>38</b> may be alternatively directly coupled to the IC <b>22</b> as low voltage, high current power via the power connection <b>54</b> using the conductor <b>116</b>, without using the decoupling capacitance <b>42</b>.

P-0238[0238] In an analogous manner as describe with reference to FIG. 2, the power delivery system <b>12</b> is coupled to the remote circuit <b>52</b> to provide power to the remote circuit <b>52</b>. The preferred path for power delivery is from the power supply <b>34</b> to the voltage regulator module <b>154</b> as high voltage, low current power via the power connection <b>36</b> using the conductor <b>116</b> or the PCB trace <b>118</b>, then to the decoupling capacitance <b>158</b> as low voltage, high current power via the power connection <b>156</b> using the conductor <b>116</b>, then to the remote circuit <b>52</b> as low voltage, high current power via the power connection <b>166</b> using the conductor <b>116</b>. Also in an analogous manner as describe with reference to FIG. 2, the voltage regulator module <b>154</b> alternatively may be directly coupled to the remote circuit <b>52</b> as low voltage, high current power via a voltage regulator module to remote circuit power connection <b>160</b> using the conductor <b>116</b>, without using the decoupling capacitance <b>158</b>.

P-0239[0239] Alternatively, the voltage regulator module <b>38</b> may deliver low voltage, high current power to the decoupling capacitance <b>158</b> via power connection <b>162</b> using the conductor <b>116</b> or, alternatively, directly to the remote circuit <b>52</b> via the power connections <b>162</b> and <b>160</b> using the conductor <b>116</b>, without using the voltage regulator module <b>154</b>. Alternatively, the decoupling capacitance <b>42</b> may deliver low voltage, high current power directly to the remote circuit <b>52</b> via power connection <b>164</b> using the conductor <b>116</b>, without using the voltage regulator module <b>154</b> or the decoupling capacitance <b>158</b>.

P-0240[0240] Hence, in FIG. 15, the connector <b>112</b> may carry only the voltage regulator module <b>38</b>, only the decoupling capacitance <b>42</b>, or both the voltage regulator module <b>38</b> and the decoupling capacitance <b>42</b>. Similarly, the connector <b>140</b> may carry neither the voltage regulator module <b>154</b> or the decoupling capacitance <b>158</b>, only one of the voltage regulator module <b>154</b> and the decoupling capacitance <b>158</b>, or both the voltage regulator module <b>154</b> and the decoupling capacitance <b>158</b>. The particular desired combination depends on various engineering considerations including, without limitation, the types of circuits employed in the IC <b>22</b> and the remote circuit <b>52</b>, the type of signal interface used as shown in table <b>84</b> of FIGS. 7A and 7B, the desired characteristics of the thermal management system <b>18</b>, etc., as described herein.

P-0241[0241]FIG. 16 illustrates an elevation view of the IC <b>22</b> and the remote circuit <b>52</b>, as shown in FIGS. <b>13</b> or <b>14</b>, each having the voltage regulator module <b>38</b> and <b>154</b> and the decoupling capacitance <b>42</b> and <b>158</b> located on a conductor <b>116</b> and <b>117</b>, respectively, in accordance with the preferred embodiments of the present invention. The power delivery system <b>12</b> is coupled to the IC <b>22</b> to provide power to the IC <b>22</b>, as described with reference to FIG. 2. As described with reference to FIG. 2, the preferred path for high voltage, low current power delivery is from the power supply <b>34</b> to the voltage regulator module <b>38</b> via the power connection <b>36</b> using the conductor <b>116</b>, then to the decoupling capacitance <b>42</b> as low voltage, high current power via the power connection <b>40</b> using the conductor <b>116</b>, then to the IC <b>22</b> as low voltage, high current power via the power connection <b>44</b> using the conductor <b>116</b>. Also as described with reference to FIG. 2, the voltage regulator module <b>38</b> may be alternatively directly coupled to the IC <b>22</b> as low voltage, high current power via the power connection <b>54</b> using the conductor <b>116</b>, without using the decoupling capacitance <b>42</b>.

P-0242[0242] In an analogous manner as describe with reference to FIG. 2, the power delivery system <b>12</b> is coupled to the remote circuit <b>52</b> to provide power to the remote circuit <b>52</b>. The preferred path for power delivery is from the power supply <b>34</b> to the voltage regulator module <b>154</b> as high voltage, low current power via the power connection <b>36</b> using the conductor <b>117</b>, then to the decoupling capacitance <b>158</b> as low voltage, high current power via the power connection <b>156</b> using the conductor <b>117</b>, then to the remote circuit <b>52</b> as low voltage, high current power via the power connection <b>166</b> using the conductor <b>117</b>. Also in an analogous manner as describe with reference to FIG. 2, the voltage regulator module <b>154</b> alternatively may be directly coupled to the remote circuit <b>52</b> as low voltage, high current power via a voltage regulator module to remote circuit power connection <b>160</b> using the conductor <b>117</b>, without using the decoupling capacitance <b>158</b>.

P-0243[0243] Alternatively, the voltage regulator module <b>38</b> may deliver low voltage, high current power to the decoupling capacitance <b>158</b> via power connection <b>162</b> using the conductor <b>116</b> and/or <b>117</b> or, alternatively, directly to the remote circuit <b>52</b> via the power connections <b>162</b> and <b>160</b> using the conductor <b>116</b> and/or <b>117</b>, without using the voltage regulator module <b>154</b>.

P-0244[0244] Alternatively, the decoupling capacitance <b>42</b> may deliver low voltage, high current power directly to the remote circuit <b>52</b> via power connection <b>164</b> using the conductor <b>116</b> and/or <b>117</b>, without using the voltage regulator module <b>154</b> or the decoupling capacitance <b>158</b>.

P-0245[0245] Hence, in FIG. 16, the conductor <b>116</b> may carry only the voltage regulator module <b>38</b>, only the decoupling capacitance <b>42</b>, or both the voltage regulator module <b>38</b> and the decoupling capacitance <b>42</b>. Similarly, the conductor <b>117</b> may carry neither the voltage regulator module <b>154</b> or the decoupling capacitance <b>158</b>, only one of the voltage regulator module <b>154</b> and the decoupling capacitance <b>158</b>, or both the voltage regulator module <b>154</b> and the decoupling capacitance <b>158</b>. The particular desired combination depends on various engineering considerations including, without limitation, the types of circuits employed in the IC <b>22</b> and the remote circuit <b>52</b>, the type of signal interface used as shown in table <b>84</b> of FIGS. 7A and 7B, the desired characteristics of the thermal management system <b>18</b>, etc., as described herein.

P-0246[0246]FIG. 17 is an elevation of the IC <b>22</b> and the remote circuit <b>52</b>, as shown in FIGS. <b>13</b> or <b>14</b>, each having the voltage regulator module <b>38</b> and <b>154</b> and the decoupling capacitance <b>42</b> and <b>158</b>, respectively, located on the PCB <b>114</b> in accordance with the preferred embodiments of the present invention. The power delivery system <b>12</b> is coupled to the IC <b>22</b> to provide power to the IC <b>22</b>, as described with reference to FIG. 2. As described with reference to FIG. 2, the preferred path for high voltage, low current power delivery is from the power supply <b>34</b> to the voltage regulator module <b>38</b> via the power connection <b>36</b> using the PCB trace <b>118</b>, then to the decoupling capacitance <b>42</b> as low voltage, high current power via the power connection <b>40</b> using the PCB trace <b>118</b>, then to the IC <b>22</b> as low voltage, high current power via the power connection <b>44</b> using the PCB trace <b>118</b> and the conductor <b>116</b>. Also as described with reference to FIG. 2, the voltage regulator module <b>38</b> may be alternatively directly coupled to the IC <b>22</b> as low voltage, high current power via the power connection <b>54</b> using the PCB trace <b>118</b> and the conductor <b>116</b>, without using the decoupling capacitance <b>42</b>.

P-0247[0247] In an analogous manner as describe with reference to FIG. 2, the power delivery system <b>12</b> is coupled to the remote circuit <b>52</b> to provide power to the remote circuit <b>52</b>. The preferred path for power delivery is from the power supply <b>34</b> to the voltage regulator module <b>154</b> as high voltage, low current power via the power connection <b>36</b> using the PCB trace <b>118</b>, then to the decoupling capacitance <b>158</b> as low voltage, high current power via the power connection <b>156</b> using the PCB trace <b>118</b>, then to the remote circuit <b>52</b> as low voltage, high current power via the power connection <b>166</b> using the PCB trace <b>118</b> and the conductor <b>116</b>. Also in an analogous manner as describe with reference to FIG. 2, the voltage regulator module <b>154</b> alternatively may be directly coupled to the remote circuit <b>52</b> as low voltage, high current power via a voltage regulator module to remote circuit power connection <b>160</b> using the PCB trace <b>118</b> and the conductor <b>116</b>, without using the decoupling capacitance <b>158</b>.

P-0248[0248] Alternatively, the voltage regulator module <b>38</b> may deliver low voltage, high current power to the decoupling capacitance <b>158</b> via power connection <b>162</b> using the using the PCB trace <b>118</b> or, alternatively, directly to the remote circuit <b>52</b> via the power connections <b>162</b> and <b>160</b> using the PCB trace <b>118</b> and the conductor <b>116</b>, without using the voltage regulator module <b>154</b>. Alternatively, the decoupling capacitance <b>42</b> may deliver low voltage, high current power directly to the remote circuit <b>52</b> via power connection <b>164</b> using the PCB trace <b>118</b> and the conductor <b>116</b>, without using the voltage regulator module <b>154</b> or the decoupling capacitance <b>158</b>.

P-0249[0249] Hence, in FIG. 17, the PCB <b>114</b> may carry only the voltage regulator module <b>38</b>, only the decoupling capacitance <b>42</b>, or both the voltage regulator module <b>38</b> and the decoupling capacitance <b>42</b>. Similarly, the conductor <b>117</b> may carry neither the voltage regulator module <b>154</b> or the decoupling capacitance <b>158</b>, only one of the voltage regulator module <b>154</b> and the decoupling capacitance <b>158</b>, or both the voltage regulator module <b>154</b> and the decoupling capacitance <b>158</b>. The particular desired combination depends on various engineering considerations including, without limitation, the types of circuits employed in the IC <b>22</b> and the remote circuit <b>52</b>, the type of signal interface used as shown in table <b>84</b> of FIGS. 7A and 7B, the desired characteristics of the thermal management system <b>18</b>, etc., as described herein.

P-0250[0250]FIG. 18 is an elevational view of the IC <b>22</b> and the remote circuit <b>52</b>, as shown in FIGS. <b>13</b> or <b>14</b>, each having a voltage regulator module <b>38</b> and <b>154</b> located on a conductor <b>116</b> and <b>117</b>, respectively, and decoupling capacitance <b>42</b> and <b>158</b> located in a connector <b>112</b> and <b>140</b>, respectively, in accordance with the preferred embodiments of the present invention. The power delivery system <b>12</b> is coupled to the IC <b>22</b> to provide power to the IC <b>22</b>, as described with reference to FIG. 2. As described with reference to FIG. 2, the preferred path for high voltage, low current power delivery is from the power supply <b>34</b> to the voltage regulator module <b>38</b> via the power connection <b>36</b> using the conductor <b>116</b>, then to the decoupling capacitance <b>42</b> as low voltage, high current power via the power connection <b>40</b> using the conductor <b>116</b>, then to the IC <b>22</b> as low voltage, high current power via the power connection <b>44</b> using the conductor <b>116</b>. Also as described with reference to FIG. 2, the voltage regulator module <b>38</b> may be alternatively directly coupled to the IC <b>22</b> as low voltage, high current power via the power connection <b>54</b> using the conductor <b>116</b>, without using the decoupling capacitance <b>42</b>.

P-0251[0251] In an analogous manner as describe with reference to FIG. 2, the power delivery system <b>12</b> is coupled to the remote circuit <b>52</b> to provide power to the remote circuit <b>52</b>. The preferred path for power delivery is from the power supply <b>34</b> to the voltage regulator module <b>154</b> as high voltage, low current power via the power connection <b>36</b> using the conductor <b>117</b> and <b>116</b>, then to the decoupling capacitance <b>158</b> as low voltage, high current power via the power connection <b>156</b> using the conductor <b>117</b>, then to the remote circuit <b>52</b> as low voltage, high current power via the power connection <b>166</b> using the conductor <b>117</b>. Also in an analogous manner as describe with reference to FIG. 2, the voltage regulator module <b>154</b> alternatively may be directly coupled to the remote circuit <b>52</b> as low voltage, high current power via a voltage regulator module to remote circuit power connection <b>160</b> using the conductor <b>117</b>, without using the decoupling capacitance <b>158</b>.

P-0252[0252] Alternatively, the voltage regulator module <b>38</b> may deliver low voltage, high current power to the decoupling capacitance <b>158</b> via power connection <b>162</b> using the conductor <b>116</b> or, alternatively, directly to the remote circuit <b>52</b> via the power connections <b>162</b> and <b>160</b> using the conductor <b>116</b>, without using the voltage regulator module <b>154</b>. Alternatively, the decoupling capacitance <b>42</b> may deliver low voltage, high current power directly to the remote circuit <b>52</b> via power connection <b>164</b> using the conductor <b>116</b>, without using the voltage regulator module <b>154</b> or the decoupling capacitance <b>158</b>.

P-0253[0253] Hence, in FIG. 18, the conductor <b>116</b> carries the voltage regulator module <b>38</b> and the connector <b>112</b> carries the decoupling capacitance <b>42</b>. Similarly, the conductor <b>117</b> carries the voltage regulator module <b>154</b> and the connector <b>140</b> carries the decoupling capacitance <b>158</b>.

P-0254[0254]FIG. 19 is an elevation of the IC <b>22</b> and the remote circuit <b>52</b>, as shown in FIGS. <b>13</b> or <b>14</b>, each having the voltage regulator module <b>38</b> and <b>154</b> located on the PCB <b>114</b> and the decoupling capacitance <b>42</b> and <b>158</b> located in the connector <b>112</b> and <b>140</b>, respectively, in accordance with the preferred embodiments of the present invention. The power delivery system <b>12</b> is coupled to the IC <b>22</b> to provide power to the IC <b>22</b>, as described with reference to FIG. 2. As described with reference to FIG. 2, the preferred path for high voltage, low current power delivery is from the power supply <b>34</b> to the voltage regulator module <b>38</b> via the power connection <b>36</b> preferably using the PCB trace <b>118</b> and alternatively using the conductor <b>116</b>, then to the decoupling capacitance <b>42</b> as low voltage, high current power via the power connection <b>40</b> preferably using the conductor <b>116</b> and alternatively using the PCB trace <b>118</b>, then to the IC <b>22</b> as low voltage, high current power via the power connection <b>44</b> preferably using the conductor <b>116</b> and alternatively using the PCB trace <b>118</b>. Also as described with reference to FIG. 2, the voltage regulator module <b>38</b> may be alternatively directly coupled to the IC <b>22</b> as low voltage, high current power via the power connection <b>54</b> preferably using the conductor <b>116</b> and via the power connection <b>162</b> and <b>44</b> alternatively using the PCB trace and the conductor <b>116</b>, respectively, without using the decoupling capacitance <b>42</b>.

P-0255[0255] In an analogous manner as describe with reference to FIG. 2, the power delivery system <b>12</b> is coupled to the remote circuit <b>52</b> to provide power to the remote circuit <b>52</b>. The preferred path for power delivery is from the power supply <b>34</b> to the voltage regulator module <b>154</b> as high voltage, low current power via the power connection <b>36</b> preferably using the PCB trace <b>118</b> and alternatively using the conductor <b>116</b>, then to the decoupling capacitance <b>158</b> as low voltage, high current power via the power connection <b>156</b> preferably using the conductor <b>116</b> and alternatively using the PCB trace <b>118</b>, then to the remote circuit <b>52</b> as low voltage, high current power via the power connection <b>166</b> preferably using the conductor <b>116</b> and alternatively using the PCB trace <b>118</b>. Also in an analogous manner as describe with reference to FIG. 2, the voltage regulator module <b>154</b> alternatively may be directly coupled to the remote circuit <b>52</b> as low voltage, high current power via a voltage regulator module to remote circuit power connection <b>160</b> preferably using the conductor <b>116</b> and alternatively using the PCB trace <b>118</b>, without using the decoupling capacitance <b>158</b>.

P-0256[0256] Alternatively, the voltage regulator module <b>38</b> may deliver low voltage, high current power to the decoupling capacitance <b>158</b> via power connection <b>162</b> preferably using the conductor <b>116</b> and alternatively using the PCB trace <b>118</b> or, alternatively, directly to the remote circuit <b>52</b> via the power connections <b>162</b> preferably using the conductor <b>116</b> or alternatively using the PCB trace <b>118</b>, without using the voltage regulator module <b>154</b>. Alternatively, the decoupling capacitance <b>42</b> may deliver low voltage, high current power directly to the remote circuit <b>52</b> via power connection <b>164</b> preferably using the conductor <b>116</b> and alternatively using the PCB trace <b>118</b>, without using the voltage regulator module <b>154</b> or the decoupling capacitance <b>158</b>.

P-0257[0257] Hence, in FIG. 19, the PCB <b>114</b> carries the voltage regulator module <b>38</b> and the connector <b>112</b> carries the decoupling capacitance <b>42</b>. Similarly, the PCB <b>114</b> carries the voltage regulator module <b>154</b> and the connector <b>140</b> carries the decoupling capacitance <b>158</b>.

P-0258[0258] In FIGS. 15, 18 and <b>19</b> the decoupling capacitance <b>42</b>, located in the connector, may take the form of an integral capacitor or a plurality of discrete capacitors soldered directly to the power contacts <b>92</b> on the top <b>68</b> and/or side(s) <b>72</b> and <b>74</b> of the IC <b>22</b>. The decoupling capacitance <b>42</b> receives power from power connection <b>24</b>, formed as the conductor <b>116</b>, via a connector (not shown) mounted on the IC <b>22</b> rather than from the IC <b>22</b> via the PCB trace <b>118</b>. In this case, the connector <b>112</b> includes the decoupling capacitance <b>42</b>, the IC power connection <b>46</b>, formed as power contacts <b>92</b>, possibly the solder electrically coupling the decoupling capacitance <b>42</b> and the power contacts <b>92</b>, and possibly the connector (not shown) connecting the conductor <b>116</b> and the decoupling capacitance <b>42</b>. In this example, the connector <b>112</b> represents a collection of discrete parts assembled in a particular way rather than a conventional single piece structure such as a plastic cover.

P-0259[0259]FIG. 20 illustrates an elevation view of the IC <b>22</b>, as shown in FIGS. <b>11</b> to <b>19</b>, having the thermal management system <b>18</b> and an electromagnetic interference (EMI) emission control system <b>20</b> in accordance with the preferred embodiments of the present invention. In FIG. 20, the power delivery system <b>12</b>, the signal transfer system <b>14</b>, the signal connection <b>26</b>, the power connection <b>24</b>, the IC signal connection <b>48</b>, the IC power connection <b>46</b> and the dashed lines <b>120</b>, <b>122</b>, <b>124</b>, <b>126</b>, <b>128</b> and <b>130</b> are each not shown for the sake of clarity in the figure, but are intended to be included to form a more detailed design.

P-0260[0260] The thermal management system <b>18</b> includes a first heat sink <b>200</b> and alternatively includes a first heat spreader <b>202</b> and a first fan <b>204</b>, each being preferably located above the top <b>68</b> of the IC <b>22</b>. Alternatively, the thermal management system <b>18</b> includes a second heat sink <b>206</b> and alternatively includes a second heat spreader <b>208</b> and a second fan <b>210</b>, each being preferably located below the bottom <b>70</b> of the IC <b>22</b>.

P-0261[0261] The first heat sink <b>200</b> and the second heat sink <b>206</b> provide a path for the heat to be drawn away from the IC <b>22</b> via the heat connection <b>28</b>, as shown in FIG. 1. The first heat sink <b>200</b> and the second heat sink <b>206</b> may be made of any type of material, and are preferably made of metal. The first heat sink <b>200</b> and the second heat sink <b>206</b> may have one or more points of contact with the IC <b>22</b>, the heat spreader <b>202</b>, and/or the PCB <b>114</b>. The first heat sink <b>200</b> and the second heat sink <b>206</b> may have any type of design, and preferably have multiple fins that permit air to travel between adjacent fins. Alternatively, the first heat sink <b>200</b> and the second heat sink <b>206</b> may be formed as a heat pipe containing a material that changes phases (e.g., between a liquid and a gas) responsive to temperature. The first heat sink <b>200</b> and the second heat sink <b>206</b> may be secured to the connector <b>112</b>, the PCB <b>114</b> or the conductor <b>116</b>. The first heat sink <b>200</b> and the second heat sink <b>206</b> are preferably formed as separate parts, but may be formed as one integral part.

P-0262[0262] The first heat spreader <b>202</b> and the second heat spreader <b>208</b> provide a thermally conductive path to conduct heat from the IC <b>22</b> to the first heat sink <b>200</b> and the second heat sink <b>206</b>, respectively. The first heat spreader <b>202</b> and the second heat spreader <b>208</b> may be made of any type of material, are preferably made of metal, and are alternatively made of a gel or glue. Typically, the first heat spreader <b>202</b> and the second heat spreader <b>208</b> are in direct contact with the IC <b>22</b>. The first heat spreader <b>202</b> and the second heat spreader <b>208</b> are preferably formed as separate parts, but may be formed as one integral part.

P-0263[0263] The first fan <b>204</b> and the second fan <b>210</b> force air across the first heat sink <b>200</b> and the second heat sink <b>206</b>, respectively, to draw heat away from the first heat sink <b>200</b> and the second heat sink <b>206</b>, respectively. The first fan <b>204</b> and the second fan <b>210</b> may have any type of design suitable for pushing and/or pulling air across the first heat sink <b>200</b> and the second heat sink <b>206</b>, respectively. The first fan <b>204</b> and the second fan <b>210</b> may receive power via the PCB <b>114</b>, the connector <b>112</b>, or the conductor <b>116</b>. The first fan <b>204</b> and the second fan <b>210</b> may be aligned and/or secured to the connector <b>112</b>, the PCB <b>114</b> and/or the conductor <b>116</b>. The first fan <b>204</b> and the second fan <b>210</b> are preferably formed as separate parts, but may be formed as one integral part.

P-0264[0264] The first heat spreader <b>202</b>, the first heat sink <b>200</b> and the first fan <b>204</b> are preferably located in a stacked arrangement over the top <b>68</b> of the IC <b>22</b> to draw heat away from the IC <b>22</b>. Similarly, the second heat spreader <b>208</b>, the second heat sink <b>206</b> and the second fan <b>210</b> are preferably located in a stacked arrangement under the bottom <b>70</b> of the IC <b>22</b> to draw heat away from the IC <b>22</b>.

P-0265[0265] The second heat spreader <b>208</b> may also provide the IC to PCB signal and/or power interface <b>132</b>, as described above. In this case, the IC to PCB signal and/or power interface <b>132</b> is constructed, as described above, and further is constructed to have thermally conductive characteristics to provide a heat spreader. Hence, the second heat spreader <b>208</b> may also provide the IC to PCB signal and/or power interface <b>132</b> advantageously provides each of the signal and/or power interface function and the heat conduit function.

P-0266[0266] The second heat spreader <b>208</b> conducts heat to the PCB <b>114</b> or through the PCB <b>114</b> using PCB vias, heat pipes, and the like, to the second heat sink <b>206</b> located on the bottom of the PCB <b>114</b>. The second fan <b>210</b> cools the second heat sink <b>206</b>. The connector <b>112</b> and/or the PCB <b>114</b> may provide suitable alignment and/or attachment mechanisms for one or more of the first heat sink <b>200</b>, the first heat spreader <b>202</b>, the first fan <b>204</b>, the second fan <b>210</b>, the second heat sink <b>206</b> and the second heat spreader <b>208</b>.

P-0267[0267] Thermal grease (not shown) may be used between the IC <b>22</b> and the first heat spreader <b>202</b>, between first heat spreader <b>202</b> and the first heat sink <b>200</b>, between the IC <b>22</b> and the second heat spreader <b>208</b>, between the second heat spreader <b>208</b> and the PCB <b>114</b>, and/or between the second heat spreader <b>208</b> and the second heat sink <b>206</b>. The thermal grease improves the thermal conductivity between the adjacent parts.

P-0268[0268] The EMI emission control system <b>20</b> is coupled to the IC <b>22</b> over the EMI connection <b>30</b>, which represents a path for EMI emissions, as describe above. The EMI emission control system <b>20</b> may be located on one or more sides of the IC <b>22</b>, and is preferably located on the four sides <b>72</b> and <b>74</b> of the IC <b>22</b>, as shown in FIG. 20. The EMI emission control system <b>20</b> may be formed of any type of suitable conductive material including, without limitation, metal, metal coated plastic, flex circuit, conductive ink coated plastic, etc. The EMI emission control system <b>20</b> may be rigid or flexible. The EMI emission control system <b>20</b> may have any suitable form, shape and size. Preferably, the EMI emission control system <b>20</b> is carried by the connector <b>112</b>, which provides a suitable alignment and/or attachment mechanism. In this case, the EMI emission control system <b>20</b> may be located on the inside surface of, embedded within, or on the outside surface of the connector <b>112</b>. The EMI emission control system <b>20</b> and the connector <b>112</b> are preferably formed as separate parts that are mechanically aligned and secured together using insert molding, over molding, press fit, snaps, clips, adhesive, and the like, and, alternatively, may be integrally formed as a single part.

P-0269[0269] The EMI emission control system <b>20</b> may be coupled to the first heat spreader <b>202</b> and/or the first heat sink <b>200</b> via EMI junctions <b>212</b> and <b>214</b>, respectively. Likewise, the EMI emission control system <b>20</b> may be coupled to the second heat spreader <b>208</b> and/or the second heat sink <b>206</b> via EMI junctions <b>216</b> and <b>218</b>, respectively. The EMI junctions <b>212</b>, <b>214</b>, <b>216</b> and <b>218</b> represent conductive paths to electrically connect the respective parts to the EMI emission control system <b>20</b>. Any EMI emission that is directed towards the first heat spreader <b>202</b> and/or the first heat sink <b>200</b> will be routed through the first heat spreader <b>202</b> and/or the first heat sink <b>200</b>, then through the EMI junctions <b>212</b> and <b>214</b>, respectively, to the EMI emission control system <b>20</b>. Hence, the first heat spreader <b>202</b> and/or the first heat sink <b>200</b> advantageously provide EMI emission control over the top <b>68</b> of the IC <b>22</b>. Likewise, any EMI emission that is directed towards the second heat spreader <b>208</b> and/or the PCB <b>114</b> will be routed through the second heat spreader <b>208</b> and/or the PCB <b>114</b>, then through the EMI junctions <b>216</b> and/or <b>218</b>, respectively, to the EMI emission control system <b>20</b>. Hence, the second heat spreader <b>208</b> and/or the PCB <b>114</b> advantageously provide EMI emission control under the bottom <b>70</b> of the IC <b>22</b>. The EMI emission control system <b>20</b> is electrically coupled to a suitable ground potential via EMI ground path <b>220</b> to cause any undesirable EMI emissions radiated by the IC <b>22</b> to be properly grounded rather than interfering with other circuits in the area and/or to cause any undesirable EMI emissions radiated towards the IC <b>22</b> to be properly grounded rather than interfering with the IC <b>22</b>.

P-0270[0270]FIG. 21 illustrates a cross-sectional view of the IC <b>22</b>, formed as a Level Two semiconductor package <b>62</b> with an upright semiconductor die <b>58</b>, having a capacitive type of signal interface on the bottom <b>70</b> of the IC <b>22</b> and power contacts <b>92</b> on the sides <b>72</b> and <b>74</b> of the IC <b>22</b>, as shown in FIGS. 4C, 5, <b>8</b>A, <b>8</b>B, <b>9</b>A, <b>9</b>B, <b>9</b>C and <b>11</b>. This package <b>62</b> is preferably formed as a low temperature co-fired ceramic (“LTCC”) package, as is well known in the art. With the LTCC package, the semiconductor substrate <b>60</b> and the bottom side of the semiconductor package <b>62</b>, as shown in FIG. 4C, are integrally formed as a single piece.

P-0271[0271] The semiconductor substrate <b>60</b> carries signal lead frames <b>220</b>, power lead frames <b>222</b>, and the semiconductor die <b>58</b>. The signal lead frames <b>220</b> and the power lead frames <b>222</b> each extend from the inside of the semiconductor package <b>62</b> to the outside of the semiconductor package <b>62</b>. The signal lead frames <b>220</b> each have a signal pad <b>226</b>, located inside the semiconductor package <b>62</b> and disposed on the top of semiconductor substrate <b>60</b>, and a signal contact <b>90</b>, located outside the semiconductor package <b>62</b> and disposed on the bottom of semiconductor package <b>62</b>, as shown in FIGS. 5, 9B and <b>11</b>. Note that the signal contacts <b>90</b> are flush with the semiconductor package <b>62</b>, as described with reference to FIG. 8B. Preferably, the signal contacts <b>90</b> form one side of the conductive plates adapted for use with the capacitive type of signal connection, as shown in table <b>84</b> of FIGS. 7A and 7B.

P-0272[0272] Similarly, the power lead frames <b>222</b> each have a power pad <b>228</b>, located inside the semiconductor package <b>62</b> and disposed on the top of semiconductor substrate <b>60</b>, and a power contact <b>92</b>, located outside the semiconductor package <b>62</b> and disposed on the side(s) <b>72</b> and <b>74</b> of semiconductor package <b>62</b>, as shown in FIGS. 5, 9C and <b>11</b>. Preferably, the power contacts <b>92</b> are located on the side <b>72</b> of the IC <b>22</b>. Alternatively, the power contacts <b>92</b> are located on the side <b>74</b> of the IC <b>22</b>. Note that the power contacts <b>92</b> are raised and outside the semiconductor package <b>62</b>, as described with reference to FIG. 8A.

P-0273[0273] The semiconductor die <b>58</b> is mounted on the semiconductor substrate <b>60</b> in an upright orientation, wherein the top <b>232</b> of the semiconductor die <b>58</b>, having power and/or signal pads (not shown), faces away from the semiconductor substrate <b>60</b>.

P-0274[0274] Signal wire bonds <b>230</b> connect appropriate signal pads on the top <b>232</b> of the semiconductor die <b>58</b> to corresponding signal pads <b>226</b> disposed on the top of semiconductor substrate <b>60</b>. Similarly, power wire bonds <b>234</b> connect appropriate power pads on the top <b>232</b> of the semiconductor die <b>58</b> to corresponding power pads <b>228</b> disposed on the top of semiconductor substrate <b>60</b>.

P-0275[0275] The IC to PCB signal and/or power interface <b>132</b> is disposed on the bottom <b>70</b> of the IC <b>22</b>. Preferably, the interface <b>132</b> forms a dielectric material having an appropriate dielectric constant, as described above. Preferably, the interface <b>132</b> is formed as a separate part and then attached to the bottom <b>70</b> of the IC <b>22</b>.

P-0276[0276]FIG. 22 illustrates a cross-sectional view of the IC <b>22</b>, formed as a Level Two semiconductor package <b>62</b> with a flipped semiconductor die <b>58</b>, having a capacitive type of signal interface on the bottom of the IC <b>22</b> and power contacts <b>92</b> on the sides <b>72</b> and <b>74</b> of the IC <b>22</b>, as shown in FIGS. 4C, 5, <b>8</b>A, <b>8</b>B, <b>9</b>A, <b>9</b>B, <b>9</b>C and <b>11</b>. The IC <b>22</b> in FIG. 22 is the same as that described for the IC <b>22</b> in FIG. 21 except that the semiconductor die <b>58</b> is placed up side down, otherwise known as a “flip chip” orientation, on the semiconductor substrate <b>60</b>, as is well known in the art of semiconductor design. The flip chip orientation requires that the signals and power be routed to the signal contacts <b>90</b> and the power contacts <b>92</b>, respectively, in different ways than with the upright orientation.

P-0277[0277] The top <b>232</b> of the semiconductor die <b>58</b> that was facing away from the semiconductor substrate <b>60</b> in FIG. 22 is facing towards the semiconductor substrate <b>60</b> in FIG. 22. Hence, in FIG. 22, what may be conventionally referred to as the top <b>232</b> of the IC <b>22</b> in FIG. 21 may be conventionally referred to as the bottom <b>232</b> of the IC <b>22</b>. With the flip chip orientation in FIG. 22, the power and/or signal pads (not shown) on the bottom <b>232</b> of the IC <b>22</b> face towards the semiconductor substrate <b>60</b>. The signal pads (not shown) on the bottom <b>232</b> of the IC <b>22</b> are electrically coupled to corresponding signal pads <b>226</b> disposed on the top of semiconductor substrate <b>60</b> using coupling techniques that are well known in the art of semiconductor manufacturing.

P-0278[0278] A second power lead frame <b>236</b> has a first power pad <b>238</b> and a second power pad <b>240</b> electrically coupled to opposite ends of the second power lead frame <b>236</b>. The first power pad <b>238</b> and the second power pad <b>240</b> are each located inside the semiconductor package <b>62</b> and disposed on the top of semiconductor substrate <b>60</b>. The first power pad <b>238</b> is located outside of and uncovered by the semiconductor die <b>58</b> and the second power pad <b>240</b> is located under the semiconductor die <b>58</b>. Preferably, the power wire bond <b>234</b> connects the first power pad <b>238</b> to the corresponding power pad <b>228</b>. Alternatively, the first power pad <b>238</b> may be integrally formed with the corresponding power pad <b>228</b>. Alternatively, the first power pad <b>238</b> may be welded to the corresponding power pad <b>228</b>.

P-0279[0279]FIG. 23 illustrates a cross-sectional view of the IC <b>22</b>, as shown in FIG. 21, carried by the connector <b>112</b>, formed as a socket, and supporting a heat sink <b>200</b>, as shown in FIGS. 4C, 5, <b>8</b>A, <b>8</b>B, <b>10</b>A, <b>10</b>B, <b>10</b>C, <b>11</b>, <b>12</b>B and <b>20</b>. The IC <b>22</b> in FIG. 23 is the same as that described for the IC <b>22</b> in FIG. 21. Additional elements shown in FIG. 23 include the connector <b>112</b>, formed as a socket, and the heat sink <b>200</b>.

P-0280[0280] The IC <b>22</b> is carried by a connector <b>112</b> formed as a socket, as shown in FIG. 12B. The IC to PCB signal and/or power interface <b>132</b> is represented by the curved lines extending from the power contacts <b>90</b> across the bottom side of the connector <b>112</b>. In FIG. 23, the interface <b>132</b> capacitively couples only the signals between the IC <b>22</b> and the PCB <b>114</b> because the power is delivered to the sides <b>72</b> or <b>74</b> of the IC <b>22</b>. Preferably, the interface <b>132</b> is carried with the bottom of the connector <b>112</b>, either as a separate piece part or as an integral part of the connector <b>112</b>.

P-0281[0281] Power is delivered to the IC <b>22</b> via the power contacts <b>92</b> located on the sides <b>72</b> or <b>74</b> of the IC <b>22</b>. Preferably, power is delivered to the power contacts <b>92</b> located on the side <b>72</b> of the IC <b>22</b> via the power connection <b>24</b>, formed as a conductor <b>116</b>. Alternatively, power is delivered to the power contacts <b>92</b> located on the side <b>74</b> of the IC <b>22</b> via the power connection <b>24</b>, formed as a PCB trace <b>116</b> on the PCB and formed as a conductor <b>116</b> carried by the connector <b>116</b>. The connector <b>112</b> is electrically coupled to the power contacts <b>92</b> via corresponding power contacts <b>242</b> carried by the connector <b>112</b>. The power contacts <b>92</b> carried by the connector <b>112</b> are made of a suitable conductive material, such as metal, and physically touch and make electrical contact with the power contacts <b>92</b> on the IC <b>22</b>.

P-0282[0282] The heat sink <b>200</b> is disposed on top <b>68</b> of and makes direct contact with the top <b>68</b> of the IC <b>22</b>. The heat sink <b>200</b> draws heat away from the IC <b>22</b>. The heat sink <b>200</b> is aligned and/or secured in its location, as describe with reference to FIG. 20 above.

P-0283[0283]FIG. 24 illustrates a cross-sectional view of the IC <b>22</b>, formed as a Level Two semiconductor package <b>62</b> with an upright semiconductor die <b>58</b>, having a capacitive type of signal interface on the bottom <b>70</b> of the IC <b>22</b> and power contacts <b>92</b> on the top <b>68</b> of the integrated circuit, as shown in FIGS. 4C, 5, <b>8</b>A, <b>8</b>B, <b>9</b>A, <b>9</b>B, <b>9</b>C and <b>11</b>. The IC <b>22</b> in FIG. 24 is the same as that described for the IC <b>22</b> in FIG. 21, except that the power contacts <b>92</b> are located on the top <b>68</b> of the IC <b>22</b>.

P-0284[0284] The power lead frame <b>222</b> has the power pad <b>228</b> and the power contact <b>92</b> electrically connected at each end of the power lead frame <b>222</b>. The lead frame <b>222</b> is routed through the semiconductor substrate <b>60</b> and up through the sides <b>72</b> and <b>74</b> of the semiconductor package <b>62</b>. The power pad <b>228</b> is located inside the semiconductor package <b>62</b> and is disposed on the top of semiconductor substrate <b>60</b>. The power contact <b>92</b> is located outside the semiconductor package <b>62</b> and disposed on the top <b>68</b> of semiconductor package <b>62</b>, as shown in FIGS. 5, 9A or <b>10</b>A, and <b>11</b>. Note that the power contacts <b>92</b> are flush with the semiconductor package <b>62</b>, as described with reference to FIG. 8B. The power wire bond <b>234</b> connects appropriate the power pad on the top <b>232</b> of the semiconductor die <b>58</b> to the corresponding power pad <b>228</b>.

P-0285[0285]FIG. 25 illustrates a cross-sectional view of the IC <b>22</b>, formed as a Level Two semiconductor package <b>62</b> with a flipped semiconductor die <b>58</b>, having a capacitive type of signal interface on the bottom <b>70</b> of the IC <b>22</b> and power contacts <b>92</b> on the top <b>68</b> of the IC <b>22</b>, as shown in FIGS. 4C, 5, <b>8</b>A, <b>8</b>B, <b>9</b>A, <b>9</b>B, <b>9</b>C and <b>11</b>. The IC <b>22</b> in FIG. 25 is a combination of that described for the IC <b>22</b> in FIGS. 22 and 24, except for the location of the power pad <b>228</b>. The IC <b>22</b> in FIG. 25 has the semiconductor die <b>58</b> in the flip chip orientation, as described with reference to FIG. 22, and has the power contacts <b>92</b> located on the top <b>68</b> of the IC <b>22</b>, as described with reference to FIG. 24. The power pads <b>228</b> are located under the semiconductor die <b>58</b> along with the signal pads <b>226</b> and are connected to corresponding power pads (not shown) on the bottom <b>232</b> of the semiconductor die <b>58</b> in a conventional manner.

P-0286[0286]FIG. 26 illustrates a cross-sectional view of the IC <b>22</b>, formed as a Level One semiconductor package with a flipped semiconductor die <b>58</b>, having a capacitive type of signal interface on the bottom <b>70</b> of the IC <b>22</b> and power contacts <b>92</b> on the top <b>68</b> of the IC <b>22</b>, as shown in FIGS. 4B, 5, <b>8</b>A, <b>8</b>B, <b>10</b>A, <b>10</b>B, <b>10</b>C, <b>11</b> and <b>20</b>. The IC <b>22</b> in FIG. 26 is similar to that described for the IC <b>22</b> in FIGS. 22 and 25, except for the type of semiconductor package <b>62</b> employed. In FIG. 26, the semiconductor die <b>58</b> is mounted on the semiconductor substrate <b>60</b> in the flip chip orientation, as described with reference to FIGS. 22 and 25.

P-0287[0287]FIGS. 22 and 25 each illustrates an LTCC type semiconductor package <b>62</b> that encapsulates the semiconductor die <b>58</b>, as first described with reference to FIG. 21. However, FIG. 26 illustrates a semiconductor package formed as a combination of an encapsulating material <b>242</b> and the heat spreader <b>202</b>.

P-0288[0288] The encapsulating material <b>242</b>, otherwise known as a “glob top”, is a compliant material having a liquid, paste or gel consistency and is applied directly over the semiconductor die <b>58</b>, as is well known in the art of semiconductor manufacturing. Preferably, the encapsulating material <b>242</b> is applied to the perimeter of the semiconductor die <b>58</b> and is permitted to run down the sides of the semiconductor die <b>58</b> and make contact with the semiconductor substrate <b>60</b>. Alternatively, the encapsulating material <b>242</b> may also be applied to the top and sides of the semiconductor die <b>58</b>. In this alternative case, the application of the encapsulating material <b>242</b> completely encapsulates the semiconductor die <b>58</b> against the semiconductor substrate <b>60</b>.

P-0289[0289] The heat spreader <b>202</b> is placed in direct contact with the top surface of the semiconductor die <b>58</b>. The heat spreader is preferably formed as a thermally conductive material, such as metal. Preferably, the heat spreader <b>202</b> is held in place by the encapsulating material <b>242</b> disposed at the perimeter of the semiconductor die <b>58</b> by the encapsulating material <b>242</b> drying and solidifying or by an adhesive or sticky characteristic of the encapsulating material <b>242</b>. In this case, the combination of the heat spreader <b>202</b> and the application of the encapsulating material <b>242</b> at the perimeter of the semiconductor die <b>58</b> completely encapsulates the semiconductor die <b>58</b> against the semiconductor substrate <b>60</b>. Alternatively, the heat spreader <b>202</b> may be aligned and/or attached to the semiconductor substrate <b>60</b>. Alternatively, the heat spreader <b>202</b> may be secured in place by the encapsulating material <b>242</b> disposed on the top of the semiconductor die <b>58</b>.

P-0290[0290] In FIG. 26 the top of the semiconductor substrate <b>60</b> carries the power contact <b>92</b>. In this case, the top of the semiconductor package is represented by reference number <b>68</b> and includes the top of the heat spreader <b>202</b> and the top of the semiconductor substrate <b>60</b>.

P-0291[0291]FIG. 27 illustrates a cross-sectional view of the IC <b>22</b>, as shown in FIG. 26, carried by a connector <b>112</b>, formed as a socket, and supporting decoupling capacitance <b>42</b> and a heat sink <b>200</b>, as further shown in FIGS. 12B and 19. The IC <b>22</b> and semiconductor package <b>62</b> in FIG. 27 is the same as that described for the IC <b>22</b> and semiconductor package <b>62</b> in FIG. 26. Additional elements shown in FIG. 27 include the connector <b>112</b>, formed as a socket, and the heat sink <b>200</b>, and the decoupling capacitance <b>42</b>.

P-0292[0292] The decoupling capacitance <b>42</b> includes a first conductive plate <b>244</b> and a second conductive plate <b>246</b> separated by a dielectric material (not shown), forming the decoupling capacitance <b>42</b>, as is well known in the art of capacitor design. The decoupling capacitance <b>42</b> is disposed on the top <b>68</b> of the IC <b>22</b>, and, more particularly, on the top <b>68</b> of the heat spreader <b>202</b>.

P-0293[0293] A first power connector <b>256</b> and an alternate second power connector <b>258</b>, located on opposite sides of the decoupling capacitance <b>42</b>, permit power from the power connection <b>24</b> to be electrically coupled to the decoupling capacitance <b>42</b>. The power supply <b>34</b> delivers power to the first power connector <b>256</b> via the voltage regulator module <b>38</b>. The second power connector <b>258</b> may also receive power from the power supply <b>34</b> via the voltage regulator module <b>38</b> or provide power to a remote circuit <b>52</b>.

P-0294[0294] The first power connector <b>256</b> includes a first power terminal <b>255</b> and a second power terminal <b>257</b>. The second power connector <b>258</b> includes a first power terminal <b>251</b> and a second power terminal <b>253</b>. Preferably, the first power terminal <b>255</b> of the first power connector <b>256</b> and the first power terminal <b>251</b> of the second power connection <b>258</b> are integrally formed with the second conductive plate <b>246</b> as a single unit, such as by metal stamping, blanking or forming, but may be formed as separate piece parts that are electrically coupled to the second conductive plate <b>246</b>, such as by soldering, welding, and the like. Likewise, the second power terminal <b>257</b> of the first power connector <b>256</b> and the second power terminal <b>253</b> of the second power connection <b>258</b> are integrally formed with the first conductive plate <b>244</b> as a single unit, such as by metal stamping, blanking or forming, but may be formed as separate piece parts that are electrically coupled to the first conductive plate <b>244</b>, such as by soldering, welding, and the like.

P-0295[0295] The power connection <b>24</b> includes a power line <b>254</b> and a ground line <b>252</b>, as are well known in the art and as are referred to above with reference to FIG. 1. The power line <b>254</b> carries a predetermined voltage potential and the ground line <b>252</b> carries a ground potential. The power line <b>254</b> routes power to the decoupling capacitance <b>42</b> and the ground line <b>252</b> provides a return path for the ground potential from the decoupling capacitance <b>42</b>. The power line <b>254</b> is electrically coupled to the first power terminal <b>255</b> of the first power connector <b>256</b> and is electrically coupled to the first power terminal <b>251</b> of the second power connection <b>258</b>. The ground line <b>252</b> is electrically coupled to the second power terminal <b>257</b> of the first power connector <b>256</b> and is electrically coupled to the second power terminal <b>253</b> of the second power connection <b>258</b>. With these connections, the first conductive plate <b>244</b> carries the predetermined voltage potential and the second conductive plate <b>246</b> carries the ground potential.

P-0296[0296] The first conductive plate <b>244</b> of the decoupling capacitance <b>42</b> includes one or more power members <b>250</b> that is preferably formed with the first conductive plate <b>244</b>, such as by metal stamping, blanking or forming, but may also be formed as a separate piece part and then electrically coupled to the first conductive plate <b>244</b>, such as by solder, welding, and the like. The power members <b>250</b> electrically contact the power contacts <b>92</b>, corresponding to the voltage potential, on the IC <b>22</b> preferably on the top of the semiconductor substrate <b>60</b> for the level two semiconductor package <b>62</b>, as shown in FIG. 27.

P-0297[0297] The second conductive plate <b>246</b> of the decoupling capacitance <b>42</b> includes one or more ground members <b>248</b> that is preferably formed with the second conductive plate <b>246</b>, such as by metal stamping, blanking or forming, but may also be formed as a separate piece part and then electrically coupled to the second conductive plate <b>246</b>, such as by solder, welding, and the like. The ground members <b>248</b> electrically contact the ground contacts <b>92</b>, corresponding to the ground potential, on the IC <b>22</b> preferably on the top of the semiconductor substrate <b>60</b> for the level two semiconductor package <b>62</b>, as shown in FIG. 27.

P-0298[0298] Preferably, the power members <b>250</b> and the ground members <b>248</b> are each formed as compliant spring members, but may be formed as rigid members, such as pins, posts, and the like. Preferably, the power members <b>250</b> and the ground members <b>248</b>, formed as compliant spring members, have legs that are angled away from the semiconductor die <b>58</b> and feet that are turned upwards away from the semiconductor substrate <b>60</b>. Alternatively, the power members <b>250</b> and the ground members <b>248</b>, formed as compliant spring members, may have arms that are curled inward in a semi-circular or semi-elliptical fashion with hands curled inward towards the center of the circle or ellipse. The upturned feet or the inward curled hands permit a solder-less connection for easy and convenient assembly. The compliant spring members advantageously reduce the compression forces on the IC <b>22</b> along the Z-axis.

P-0299[0299] The heat sink <b>200</b> is disposed on top <b>68</b> of the IC <b>22</b>. More particularly, the heat sink <b>200</b> is disposed on top <b>68</b> of the decoupling capacitance <b>42</b>. The heat spreader <b>202</b> dissipates the non-uniform heat density on the semiconductor die <b>58</b>. The heat sink <b>200</b> conducts heat away from the semiconductor die <b>58</b> via the heat spreader <b>202</b> and/or the decoupling capacitance <b>42</b>.

P-0300[0300] Preferably, the decoupling capacitance <b>42</b> has a hole extending through the center portion of the first conductive plate <b>244</b>, the second conductive plate <b>246</b>, and the dielectric material to permit the heat sink <b>200</b> to directly contact the heat spreader <b>202</b>. In this case, although most of the heat generated by the IC <b>22</b> conducts to the heat sink <b>200</b> via the heat spreader <b>202</b>, some heat also conducts to the heat sink <b>200</b> via the decoupling capacitance <b>42</b>. Alternatively, the hole in the decoupling capacitance <b>42</b> may be eliminated to permit the heat sink <b>200</b> to conduct all of the heat through the decoupling capacitance <b>42</b>. Still alternatively, the heat sink <b>200</b> may have one or more regions that directly contact the heat spreader <b>202</b> around at least a portion of the perimeter of the decoupling capacitance <b>42</b>.

P-0301[0301]FIG. 28 illustrates a side perspective assembly view of the system <b>10</b> for the IC <b>22</b>, formed as a Level Two semiconductor package <b>62</b>, carried in a connector <b>112</b>, formed as a two piece cover and as a socket, and supporting decoupling capacitance <b>42</b> and a heat sink <b>200</b>, as shown in FIGS. 4C, 5, <b>8</b>A, <b>8</b>B, <b>9</b>A, <b>9</b>B, <b>9</b>C, <b>11</b>, <b>12</b>A, <b>12</b>B, <b>19</b> and <b>20</b>. The connector <b>112</b> carries the IC <b>22</b> (not shown in FIG. 28), formed as the level-two semiconductor package <b>62</b>, the decoupling capacitance <b>42</b>, and the IC to PCB signal and/or power interface <b>132</b> (not shown in FIG. 28). The connector <b>112</b> is disposed on the PCB <b>114</b>. The heat sink <b>200</b> is disposed on the connector <b>112</b>. A fan is not shown directly in FIG. 28, but is typically attached to the top of the heat sink <b>200</b> at B.

P-0302[0302] The connector <b>112</b> includes the first power connector <b>256</b> and the second power connector <b>258</b>, analogous to those shown in FIG. 27. The first power connector <b>256</b> is preferably shown as an edge card connector. The second power connector <b>258</b> is preferably shown as a pin connector. The system <b>10</b> includes one or more holes <b>260</b>, preferably located at the four corners of the system <b>10</b>. The holes <b>260</b> preferably extend through the connector <b>112</b> and the decoupling capacitance <b>42</b> to mechanically align and secure the system <b>10</b>.

P-0303[0303]FIG. 29 is an exploded view of the assembly view of the system <b>10</b>, as shown in FIG. 27 and it includes, as shown from top to bottom , the heat sink <b>200</b>, the first power connector <b>256</b>, the second power connector <b>258</b>, a top portion <b>262</b> of the connector <b>112</b>, the first conductive plate <b>244</b>, the second conductive plate <b>246</b>, a center portion <b>264</b> of the connector <b>112</b>, a signal contact plate <b>268</b>, the IC <b>22</b>, the PCB <b>64</b>, a bottom portion <b>266</b> of the connector <b>112</b> and the PCB <b>114</b>.

P-0304[0304] The heat sink <b>200</b> is disposed on the top portion <b>262</b> of the connector <b>112</b>. The top portion <b>262</b> of the connector <b>112</b> has integrally molded features adapted to receive the first power connector <b>256</b> and the second power connector <b>258</b>. The top portion <b>262</b> of the connector <b>112</b> has a hole extending through the center area thereof, which is adapted to receive a center portion of the bottom of the heat sink <b>200</b>. The top portion <b>262</b> of the connector <b>112</b> also has four holes <b>260</b> at the four comers thereof.

P-0305[0305] The first conductive plate <b>244</b>, carrying the voltage potential, includes the second power terminal <b>253</b> of the second power connection <b>258</b>, the second power terminal <b>257</b> of the first power connector <b>256</b>, and a plurality of power contacts <b>250</b>. The power members <b>250</b> extend from each of the four sides of the first conductive plate <b>244</b>. The second power terminal <b>253</b> of the second power connection <b>258</b> and the second power terminal <b>257</b> of the first power connector <b>256</b> are bent upwards. The power members <b>250</b> are bent downwards. The first conductive plate <b>244</b> also has four holes <b>260</b> at the four comers thereof.

P-0306[0306] The second conductive plate <b>246</b>, carrying the ground potential, includes the first power terminal <b>255</b> of the first power connector <b>256</b>, the first power terminal <b>251</b> of the second power connection <b>258</b>, and the ground members <b>248</b>. The ground contacts <b>248</b> extend from each of the four sides of the second conductive plate <b>246</b>. The first power terminal <b>255</b> of the first power connector <b>256</b> and the first power terminal <b>251</b> of the second power connection <b>258</b> are bent upwards. The ground members <b>248</b> are bent downwards. The second conductive plate <b>246</b> also has four holes <b>260</b> at the four comers thereof.

P-0307[0307] Preferably, the first power terminals <b>255</b>, carried with the second conductive plate <b>246</b>, of the first power connector <b>256</b> and the second power terminals <b>257</b>, carried with the first conductive plate <b>244</b>, of the first power connector <b>256</b> are alternately arranged adjacent to each other at a predetermined pitch in the first power connector <b>256</b>, but, alternatively, may have any arrangement. Preferably, the first power terminals <b>251</b>, carried with the second conductive plate <b>246</b>, of the second power connection <b>258</b> and the second power terminals <b>253</b>, carried with the first conductive plate <b>244</b>, of the second power connector <b>258</b> are alternately arranged adjacent to each other in the second power connector <b>258</b>, but, alternatively, may have any arrangement. Preferably, the power contacts <b>250</b>, carried with the second conductive plate <b>246</b>, and the ground contacts <b>248</b>, carried with the second conductive plate <b>246</b>, are alternately arranged adjacent to each other, but, alternatively, may have any arrangement.

P-0308[0308] The center portion <b>264</b> of the connector <b>112</b> has integrally molded features adapted to receive the first power connector <b>256</b> and the second power connector <b>258</b>. The integrally molded features on the top portion <b>262</b> of the connector <b>112</b> and the center portion <b>264</b> of the connector <b>112</b> mechanically align and mate with each other to provide connector housings for their respective terminals. The connector housings are adapted to receive the first power connector <b>256</b> and the second power connector <b>258</b>. The center portion <b>264</b> of the connector <b>112</b> and the top portion <b>262</b> of the connector <b>112</b> mechanically align and mate with each other to provide a housing, otherwise described as a cover as shown in FIG. 12A, for the decoupling capacitance <b>42</b>. The center portion <b>264</b> of the connector <b>112</b> also has four holes <b>260</b> at the four corners thereof.

P-0309[0309] The signal contact plate <b>268</b> aligns and secures the first power terminals <b>251</b>, carried with the second conductive plate <b>246</b>, of the second power connection <b>258</b> and the second power terminals <b>253</b>, carried with the first conductive plate <b>244</b>, of the second power connector <b>258</b>. The IC <b>22</b> is mounted to the circuit board <b>64</b>, otherwise known as an interposer board, forming a Level Three IC <b>22</b> as shown in FIG. 4D, as is well known in the art of IC manufacturing.

P-0310[0310] The bottom portion <b>266</b> of the connector <b>112</b>, forming a socket as shown in FIG. 12B or forming a frame as shown in FIG. 12C, carries the IC to PCB signal and/or power interface <b>132</b>. The bottom portion <b>266</b> of the connector <b>112</b> is adapted to mechanically align and secure the PCB <b>64</b> to the interface <b>132</b> to permit the signal contacts <b>90</b> (not shown) on the bottom of the PCB <b>64</b> to align with corresponding signal contacts preferably on the interface <b>132</b> and alternatively on the PCB <b>114</b>. The bottom portion <b>266</b> of the connector <b>112</b> also has four holes <b>260</b> at the four corners thereof.

P-0311[0311] The holes <b>260</b> in the four corners in each of the top portion <b>262</b> of the connector <b>112</b>, the first conductive plate <b>244</b>, the second conductive plate <b>246</b>, the center portion <b>264</b> of the connector <b>112</b>, and the bottom portion <b>266</b> of the connector <b>112</b> are aligned with each other along four common axes at each corner.

P-0312[0312] A fastener extends through the five holes aligned on a common axis at each of the four corners to mechanically secure the connector <b>112</b> together as an assembly of the system <b>10</b> as shown in FIG. 28. Alternatively, four holes, aligned with the four holes in the assembly of the system <b>10</b>, may extend through the PCB <b>114</b> to attach the system <b>10</b> to the PCB <b>114</b>. The fasteners may be of any type including, without limitation, screws, heat stakes, pins, pegs, clips, and the like. The fasteners may be separate piece parts or integrally formed with a part of the connector <b>112</b>. Preferably, the fasteners are formed as four separate screws. Alternatively, the fasteners form snaps or clips that are integrally formed with at least one portion of the connector <b>112</b> that mechanically engage mating features on at least one other portion of the connector <b>112</b>. In this alternative, the fasteners, formed as snaps or clips, preferably create an assembly of the system that can be easily assembled and disassembled to permit repair or reuse, but, alternatively, may create an assembly of the system <b>10</b> that is permanently assembled in the sense that it cannot be disassembled without damaging the assembly of the system <b>10</b>.

P-0313[0313] The circuit board <b>114</b> carries the connector <b>112</b> and the heat sink <b>200</b>. The circuit board <b>114</b> is typically referred to as the motherboard because is also carries many of the circuits that the IC <b>22</b> interfaces with. The board <b>114</b> includes multiple conductive contacts (not shown) that correspond to the conductive contacts <b>90</b> on the IC <b>22</b> or on the interface <b>132</b>. The PCB also includes multiple PCB traces <b>118</b> (not shown in FIG. 29) that electrically couple the conductive contacts (not shown) on the PCB to the various other circuits interfacing with the IC <b>22</b>.

P-0314[0314] Note that FIG. 29 does not show a hole in the center region of the first conductive plate <b>244</b> and the second conductive plate <b>246</b> of the decoupling capacitance <b>42</b>, as shown in FIG. 27. Further, note that FIG. 29 does not show a heat spreader <b>202</b>, as shown in FIG. 27. The absence of these two elements in FIG. 29 illustrates the alternative described with reference to FIG. 27, wherein the decoupling capacitance <b>42</b> in FIG. 29 performs the function of the heat spreader <b>202</b> in FIG. 27 and the heat sink <b>200</b> directly contacts the top of the decoupling capacitance <b>42</b>. This alternative is further described with reference to FIGS. 30 and 31.

P-0315[0315]FIG. 30 illustrates a cross-sectional view of the assembly of the system <b>10</b>, as shown in FIGS. 28 and 29. The PCB <b>114</b> carries the connector <b>112</b>. The interface <b>132</b> provides a signal interface between the PCB <b>64</b> and the PCB <b>144</b>, as described above. The PCB <b>64</b> carries the IC <b>22</b>. The decoupling capacitance <b>42</b> is disposed over the IC <b>22</b>. The decoupling capacitance <b>42</b> has characteristics of a heat spreader and directly contacts the top of the IC <b>22</b> to spread the heat of the IC <b>22</b> throughout the structure of the decoupling capacitance <b>42</b>. The power members <b>248</b> and the ground members <b>250</b>, forming extended legs and upturned feet as described with reference to FIG. 27, contact corresponding power contacts <b>92</b> (not shown) and ground contacts <b>92</b> (not shown) on the top of the PCB <b>64</b>. The heat sink <b>200</b> is carried on the top of the connector <b>112</b>. A center region of the heat sink <b>200</b> extends through the hole in the top portion <b>262</b> of the connector <b>112</b> to directly contact the top of the decoupling capacitance <b>42</b>.

P-0316[0316]FIG. 31 illustrates an alternative cross-sectional view of the assembly of the system <b>10</b>, as shown in FIG. 28. The assembly of the system <b>10</b> in FIG. 30 is the same as the assembly of the system <b>10</b> in FIG. 31, except that the power contacts <b>92</b> are disposed on the sides (<b>72</b> and <b>74</b>) of the IC <b>22</b>, that the power members <b>248</b> and the ground members <b>250</b> are shown as inwardly curled arms and hands, and that the signal interface <b>132</b> forms a dielectric material to capacitively couple signals between the IC <b>22</b> and the PCB <b>114</b>.

P-0317[0317] The PCB <b>114</b> carries the connector <b>112</b>. The interface <b>132</b> provides a capacitive signal interface between the IC <b>22</b> and the PCB <b>144</b>. Note that the PCB <b>64</b> is not present in FIG. 31. In this case, the IC <b>22</b> has one set of the signal contacts <b>90</b> (not shown), forming one side of the individual capacitors, and the PCB <b>114</b> has the other set of the corresponding signal contacts (not shown), forming the other side of the individual capacitors. The interface <b>132</b> provides the dielectric material, having the appropriate dielectric constant, between the corresponding signal contacts on the IC <b>22</b> and the PCB <b>114</b> to permit capacitive signal coupling between the IC <b>22</b> and the PCB <b>114</b>.

P-0318[0318] The decoupling capacitance <b>42</b> is disposed over the IC <b>22</b>. The power members <b>248</b> and the ground members <b>250</b>, forming inwardly curled arms and hands, contact corresponding power contacts <b>92</b> and ground contacts <b>92</b> on the sides <b>72</b> and <b>74</b> of the IC <b>22</b>, as well as the back side (shown) and the front side (not shown). The heat sink <b>200</b> is carried on the top of the connector <b>112</b> and makes direct contact with the decoupling capacitance <b>42</b>.

P-0319[0319]FIG. 32 illustrates a connector <b>112</b> of the present invention that is hermaphroditic in the sense that it may serve as either a socket with a recess to receive the IC therein, or as a cover that may fit over the IC. This type of construction is suitable for use with a Level Two type of semiconductor package of the type illustrated in FIGS. 4C, 5, <b>8</b>A, <b>8</b>B, <b>9</b>A, <b>9</b>B, <b>9</b>C, <b>11</b>, <b>12</b>A and <b>12</b>B. In this construction, the connector includes an external means for connecting to a source of power, illustrated as a pair of edge circuit cards, or boards <b>256</b>, <b>258</b> which may serve as respective first and second power connectors. This construction is suitable for use where power may be supplied to the IC package from the sides of the package. The connector <b>112</b> carries the decoupling capacitance <b>42</b>, preferably in the form of plate capacitors that include distinct power contacts <b>248</b> and ground contacts <b>250</b>. The connector <b>112</b> has a recess, or cavity, that is formed as part of the connector <b>112</b>, with the power contacts <b>248</b> and ground contacts <b>250</b> are disposed inside the recess at the perimeter of the connector <b>112</b>. The recess has an appropriate shape and depth adapted to receive the IC <b>22</b> to permit the power contacts <b>248</b> and ground contacts <b>250</b> to align with and contact corresponding power and or ground contacts <b>92</b> on the IC <b>22</b> in the manner generally shown in FIG. 34.

P-0320[0320] The connector <b>112</b> may also be considered a cover, as shown schematically in FIG. 12A, that fits over the top of the IC <b>22</b> as shown in FIG. 31. In this instance, the decoupling capacitance <b>42</b> is disposed over the top <b>68</b> of the IC <b>22</b> and the power and contacts members <b>248</b>, <b>250</b> contact corresponding contacts <b>92</b> disposed on each side of the IC <b>22</b>. Alternatively, the connector <b>112</b> may also be considered a socket, as shown in FIG. 12B. In this case, the connector <b>112</b> is shown upright to reveal the features on the inside of the socket. As a socket, IC <b>22</b> fits into the connector <b>112</b> as shown in FIG. 23. The decoupling capacitance <b>42</b> is disposed under the bottom <b>70</b> of the IC <b>22</b> and the power and ground contacts <b>248</b>, <b>250</b> make contact corresponding power contacts <b>92</b> disposed on each side of the IC <b>22</b>. In this case, the signals would be transferred through the top <b>68</b> of the IC <b>22</b> via a signal conductor because the decoupling capacitance <b>42</b> blocks signals from being transferred through the bottom of the connector <b>112</b>. The first power connector <b>256</b> and the second power connector <b>258</b>, shown as edge card connectors, connect the voltage potential and ground potential to the decoupling capacitance <b>42</b>.

P-0321[0321]FIG. 33 illustrates an alternate connector <b>112</b> that is formed as a cover suitable for use with a Level Two semiconductor package <b>62</b>, as shown in FIGS. 4C, 5, <b>8</b>A, <b>8</b>B, <b>9</b>A, <b>9</b>B, <b>9</b>C, <b>11</b>, <b>12</b>A and <b>12</b>B, and the connector <b>112</b> may be considered as similar to that shown in FIG. 32, with the connector body portion inverted have having power supply mating members of a different style. In this embodiment, an external means for connecting to a source of power is provided in the form of two pin headers <b>256</b>, <b>258</b>, each of which include conductive pins <b>255</b>, <b>257</b> that extend outwardly from the cover, or upwardly in FIG. 33. This type of construction permits the power to be conveyed to the package from the top. Multiple conductive capacitor plates are formed in the connector.

P-0322[0322]FIG. 34 illustrates another embodiment of the present invention wherein the power delivery system is incorporated within a cover member (not shown) that fits over the IC <b>22</b>. In this embodiment, the power delivery system includes at least a pair of conductive plates <b>244</b>, <b>246</b> that are similarly sized and which are aligned with each other in the vertical (Z-axis) direction. The two plates are separated by an intervening dielectric layer <b>300</b>, the dielectric constant and or thickness of which may be chosen to provide a certain capacitance to store sufficient power to supply normal operating, or surge, current to the IC. A second insulative layer <b>302</b> is provided on the bottom surface of the bottom capacitor plate <b>246</b> so as to insulate it from the IC. As mentioned above, the power delivery system includes a plurality of contacts, <b>248</b>, <b>250</b> which may include interlaced power and ground (power return) contacts that extend outwardly from the plates <b>244</b>, <b>246</b> and down along the sides of the IC package, preferably in the cantilevered or bellows fashion illustrated, where they engage contacts <b>303</b> formed in the IC. The two plates <b>264</b>, <b>266</b> and portions of the contacts <b>248</b>, <b>250</b> are typically encapsulated or otherwise molded within an exterior insulative material, such as a plastic.

P-0323[0323] These contacts <b>248</b>, <b>250</b> are formed in each of the two plates <b>244</b>, <b>246</b> and they contact the IC package. This embodiment is suitable for use in combination with a heat sink (not shown) and as such, it may be provided with an opening <b>305</b> that extends through both plates <b>244</b>, <b>246</b> and the intervening dielectric layer <b>300</b> and the lower insulation layer <b>302</b>. A portion of the heat sink may extend through this opening <b>305</b> into contact with a heat generating surface of the IC <b>22</b>. In some constructions, a thermal conducting member may be used to fit in the opening and extend between the IC heat generating surface and the heat sink.

P-0324[0324]FIG. 35 is a sectional view of FIG. 34, but with the lower insulating layer <b>302</b> not shown for clarity, and illustrates the relationship between the IC <b>22</b>, its package <b>114</b> and the power delivery system. As shown in FIG. 35, the lower insulating layer <b>302</b> abuts against the top surface <b>22</b><i>a </i>of the IC, and additional, but smaller, openings <b>306</b>, may be provided for purposes of additional cooling. FIG. 42 presents the end of this section for better clarity. The contacts <b>248</b>, <b>250</b> are positioned around the perimeter as illustrated and this arrangement reduces the amount of force required for insertion and removal in that the contacts engage the IC along a horizontal line of action, rather than a vertical line of action.

P-0325[0325]FIGS. 36 and 37 illustrate another embodiment of the present invention that incorporates a power delivery supply that is capable of supplying multiple and distinct voltages to the IC at various locations on the IC body. This is accomplished by incorporating multiple, distinct capacitors in the cover member which are formed as individual lower conductive plates <b>310</b>-<b>313</b>. Each of these plates is spaced apart from each other as illustrated best in FIG. 37 by intervening spaces <b>315</b>, and each such plate includes, as illustrated, individual contact members <b>316</b> extending therefrom outwardly and downwardly therefrom into position for contact with contacts of the IC or the IC package. As with the previous embodiments discussed, the individual plates <b>310</b>-<b>313</b> are separated from the top, single, or multiple sectioned capacitor plate <b>244</b> by an intervening dielectric layer <b>300</b> so that the lower plates <b>310</b>-<b>313</b> of the system are separated from the upper plate <b>244</b> in the vertical direction by the intervening dielectric layer <b>300</b> and are separated from each other in the X and Y directions by either air or an intervening dielectric in the spaces <b>315</b>. It is also contemplated that each such lower plate <b>310</b>-<b>313</b> may have a corresponding, separate top palte associated therewith so that the connector will support four sets of pairs of capacitive plates in the embodiment of FIG. 32.

P-0326[0326]FIG. 36 illustrates the set of multiple plates (and the upper plate <b>244</b> and intervening dielectric <b>300</b>) embedded or encapsulated within a housing or cover portion <b>112</b> that is also preferably formed from either a dielectric or electrically insulative material. In this type of structure, the material that forms the cover portion <b>112</b> will fill the intervening spaces <b>315</b> between the lower capacitor plates <b>310</b>-<b>313</b>. The plate contacts <b>316</b> that extend therefrom may also be partially embedded with in the cover portion <b>112</b> or may be disposed within a series of slots <b>316</b> formed therein so as to not unduly limit the spring action of the contacts. FIG. 38 is a sectional view of the power delivery structure of FIG. 37 (as well as a portion of FIG. 34) prior to its embedding within a cover portion <b>112</b>. With this structure it is possible to deliver different voltages to different parts of the IC, such as 0.5V, 1.0V, −2.0V and so on.

P-0327[0327]FIG. 39 illustrates a staggered contact arrangement that may be used with the power delivery systems of the present invention. In FIG. 39, two conductive plates <b>244</b>, <b>246</b> are illustrated as separated by an intervening dielectric layer <b>300</b> and the contacts <b>248</b>, <b>250</b> of each plates extend downwardly therefrom at approximate right angles thereto, but the contacts <b>248</b>, <b>250</b> have different contact locations in the vertical directions. As illustrated, the contacts <b>248</b> of the lower plate <b>246</b> have a first length and the contacts <b>250</b> of the upper plate <b>244</b> have a second length, with both lengths being equal as shown, however, the contact arms of the contacts <b>248</b>, <b>250</b> are arranged at different elevations. This staggered arrangement assist in the reduction of forces required for insertion and removal of the cover portion <b>112</b> upon the IC or its package in that the number of contacts that engage the IC/package are halved at the first contact. This arrangement further permits the implementation of a first mate, last break aspect to the power delivery structure to reduce the likelihood of shorting and arcing occurring during connection.

P-0328[0328]FIG. 40 illustrates still another embodiment of a power delivery system constructed in accordance with the principles of the present invention, wherein the power delivery system <b>375</b> includes three capacitor plates <b>318</b>, <b>319</b> and <b>321</b> which are separated by intervening dielectric material layers <b>300</b>, <b>323</b>. The top and bottom capacitor plates <b>318</b>, <b>319</b> are interconnected together, preferably at their sides as illustrated, by interconnecting members <b>320</b>. These points of interconnection are isolated and separated from the middle, or interior capacitor plate <b>321</b> by a spacing, or clearance <b>322</b>. Sets of three contacts <b>248</b>, <b>250</b>, <b>325</b> are arranged around the perimeter of the power delivery system for contacting corresponding contacts on the IC or its package. The power delivery system in this form and the previous forms may be considered in one aspect as a module due to its structure which may be inserted into cover and socket members alike. This Figure illustrates the exemplary construction of the contacts <b>248</b>, <b>250</b> and <b>325</b> which have elongated, cantilevered or bellows arm portions <b>360</b> that that are bent downwardly and slightly inwardly and which terminate in free end portions <b>361</b> that define inner contact arm portions <b>362</b> of the contacts. Each such contact arm portion preferably has an inwardly angled contact surface <b>363</b> that is used to effect the contact with the side of the IC/package.

P-0329[0329] The use of two outer capacitor plates in this embodiment flanking the inner capacitor plate has the effect of increasing the total capacitance of the decoupling capacitance because of the increased surface area of the top and bottom plates. In other words, with this embodiment, it is possible to increase the capacitance (and current supplied tot he IC) in the same horizontal surface area provided by t he connector body portion Thus, such a construction may be used where the designer has a limited amount of space available of the circuit board, or in instances where the IC is small. In this construction, the capacitor plates are preferably vertically arranged in either a Power-Ground-Power or a Ground-Power-Ground order.

P-0330[0330]FIG. 41 illustrates a power delivery system incorporated within a cover portion <b>112</b> that fits over an IC <b>22</b> and the cover portion <b>112</b> has been rendered transparent for clarity to show how it engages the IC/package around its perimeter.

P-0331[0331]FIG. 43 illustrates the exterior of an assembled IC package with the power delivery structure incorporated therein, wherein the decoupling capacitance <b>42</b> is held over the IC by means of a cover member <b>262</b>. The assembly has a plurality of mounting holes formed in the body portion thereof for mounting the assembly to a circuit board and further has means <b>256</b>, <b>258</b> for mating with external power leads to supply power to the decoupling capacitance <b>42</b>.

P-0332[0332] FIGS. <b>44</b>-<b>50</b> illustrate another embodiment of the present invention in which an IC <b>132</b> is held within a socket-style connector <b>112</b> which has the decoupling capacitance <b>42</b> incorporated therein. As illustrated, the socket connector <b>112</b> is rectangular or square in shape and has a body portion <b>400</b> that is formed from a plurality of sidewalls <b>401</b> that cooperatively define a central opening <b>402</b> disposed therein that receives the IC <b>132</b>. The opening <b>402</b> may be a through hole, wherein the IC sits on the circuit board in contact with contacts or terminals <b>890</b>. (FIG. 46.) The decoupling capacitance <b>42</b> includes a plurality of discrete capacitors <b>403</b> each of which may deliver the same voltage or different voltages to appropriate contacts disposed on the IC <b>132</b> (not shown). A cover plate <b>404</b> encloses and seals the IC within the socket connector <b>112</b>. the capacitors <b>403</b> receive their power from a power supply <b>405</b> mounted to the circuit board <b>406</b> by way of traces. (FIG. 45.) The incorporation of these discrete capacitors into the socket connector frees up space surrounding the IC <b>132</b> on the circuit board <b>406</b>.

P-0333[0333] The capacitors <b>403</b> are received within openings <b>410</b>, such as slots, or openings, that are disposed in the body portions on the socket connector sidewalls <b>401</b>. The capacitors may include conventional capacitors as shown in FIGS. <b>44</b>-<b>48</b>, which utilize conductive wire leads <b>411</b> for connection purposes or chip-type capacitors <b>505</b>. In order to accommodate these leads <b>411</b>, the body portion sidewalls <b>401</b> may further includes passages <b>412</b> formed therein which receive the leads so as to maintain a low profile and low space aspect of the socket connector. (FIG. 48.) The body portion sidewalls <b>401</b> may have a height so as to form a slight recess that will accommodate a heat transfer member, such as a heat sink <b>200</b>. This type of connector may be fastened to the circuit board with fasteners <b>415</b>. (FIG. 50.) The capacitor-receiving openings <b>410</b> are preferably spaced apart from each other around the perimeter of the receptacle as illustrated, or they may be spaced in different spacings that correspond to location(s) of different power contacts or terminals on the IC.

P-0334[0334] FIGS. <b>51</b>-<b>54</b> illustrate another embodiment of a power delivery system <b>500</b> constructed in accordance with the principles of the present invention wherein the connector <b>112</b> is in the form of a socket <b>501</b> which has a plurality of discrete openings <b>502</b> formed in the sidewalls <b>504</b> thereof, each of which receives a decoupling capacitance <b>42</b> in the form of a chip capacitor <b>505</b>. A different terminal, or lead, structure may be used with this embodiment and the leads <b>506</b> of which are shown as wire-formed leads having a general U-shaped configuration which terminate at one end in a loop end <b>507</b> and at the opposite end <b>508</b> in free tails <b>509</b> that may be soldered to the circuit board. The wire loop leads <b>506</b> pass through the sidewalls <b>504</b> of the socket connector <b>112</b> and may be easily molded in place therein during manufacture of the socket connector and the loop ends <b>507</b> thereof are bent slightly upwardly so that they will make effective electrical contact with the bottom of an IC inserted into the socket connector. The “looped” nature of this portion of the terminal <b>506</b> provides for a redundant circuit path to the IC and also lowers the inductance of the terminals and the overall connector. The leads serve as a set of first, or “power” terminals” which are arranged in a pattern, or array that encompasses a plurality of second, preferably non-power terminals <b>550</b> arranged within the interior of the connector receptacle and which serve to connect aspects of the IC to an underlying circuit board. These non-power terminals <b>550</b> may includes LGA, PGA, BGA, spring contacts and the like.

P-0335[0335] An inner carrier frame <b>510</b> may be provided as part of the package and this inner frame <b>510</b> sits within the socket connector sidewalls to form a support for the IC. In order to accommodate the lop ends of the wire leads <b>506</b>, the frame <b>510</b> may be provided as illustrated with recesses <b>515</b> that enclose the loop ends <b>507</b> and which permit them to deflect under the insertion force of the IC when inserted into the socket connector opening. The wire leads <b>506</b> may be easily stamped and formed at low cost as part of an overall carrier strip <b>520</b> and may be formed in alternate directions from that shown in order to accommodate the position of the IC. The inner frame <b>510</b> and the sidewalls <b>504</b> may be formed together as a single piece by way of insert or overmolding, so that, in effect, the inner frame <b>510</b> serves as a base, or floor portion of the socket connector housing.

P-0336[0336]FIG. 58 illustrates another manner in which the discrete capacitors <b>403</b> have their terminals, or leads <b>44</b> extend through slots <b>430</b> that are formed in the connector body portion sidewalls <b>401</b>. In this instance, the leads are connected to terminals and the sidewalls <b>401</b> surrounding the capacitor-receiving openings <b>410</b> may have excess material added to them or may be configured in such a manner so as to facilitate the heat-staking of the capacitors <b>403</b> and their leads in order to hold them in place within the connector body portion. Alternatively, the discrete capacitors <b>403</b> may be completely encapsulated within the sidewalls <b>401</b> by sealing the openings <b>410</b> with additional materials, as at <b>440</b>, or by molding the capacitors and leads in place within the connector body portion.

P-0337[0337] Lastly, FIGS. 56 and 57 are underside perspective views of the cover member used in the systems illustrated in FIG. 30, which illustrate the placement, in an assembled state, of the capacitor plates <b>244</b>, <b>246</b> within their outer support members <b>262</b>, <b>264</b>.

P-0338[0338] The specification describes and the figures illustrate many features and characteristics of the preferred embodiments of the present invention. Any feature or characteristic described in any one part of the specification or shown in any one figure may be combined with any feature or characteristic described in any other part of the specification or shown in any other part of the same or different figure. For example, although the above description has been written in terms of power delivery systems, it will be appreciated that the present invention, may be used for signal transfer with the various capacitor plates being sized for optimum performance .

P-0339[0339] While the preferred embodiment of the invention have been shown and described, it will be apparent to those skilled in the art that changes and modifications may be made therein without departing from the spirit of the invention, the scope of which is defined by the appended claims.