Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same

0001This application is a Divisional of, and claims priority to and the benefit of, U.S. patent application Ser. No. 14/508,489, filed Oct. 7, 2014 and entitled “MULTIPLE TEMPERATURE RANGE SUSCEPTOR, ASSEMBLY, REACTOR AND SYSTEM INCLUDING THE SUSCEPTOR, AND METHODS OF USING THE SAME,” which is hereby incorporated by reference herein.

FIELD OF DISCLOSURE

0002The present disclosure generally relates to a heating and cooling apparatus. More particularly, the disclosure relates to susceptors and susceptor assemblies that can be used to provide heat to a substrate, to reactors and systems that include the susceptors and/or assemblies, and to methods of using the same.

BACKGROUND OF THE DISCLOSURE

0003Gas-phase processes, such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), and the like are often used to deposit materials onto a surface of a substrate, etch material from a surface of a substrate, and/or clean or treat a surface of a substrate. For example, gas-phase processes can be used to deposit or etch layers on a substrate to form semiconductor devices, flat panel display devices, photovoltaic devices, microelectromechanical systems (MEMS), and the like.

0004Reactors used in gas-phase processing often include a susceptor to hold a substrate in place and to heat or cool the substrate during processing. The susceptor is generally configured to heat (or cool) a substrate to a temperature within a specific range. The design configurations of the susceptor generally depend on the operating temperatures of a reactor. For example, a susceptor can be made of particular materials and have a particular mass based on the desired heating properties of the susceptor. By way of examples, some susceptors can be configured to operate in a temperature range of about 200° C. to about 600° C., and other susceptors can be configured to operate in a range of about 10° C. to about 200° C.

0005In some cases, it may be desirable expose a substrate within a reactor to two or more different processes that run at substantially different temperatures. In these cases, the susceptor is likely not ideal to use at one or more of process temperatures. For example, high temperature (e.g., greater than about 200° C.) processes often use a high mass, high watt density susceptor to allow heating of the susceptor and the substrate. In contrast, lower temperature processes (e.g., less than about 200° C.) generally employ high mass, lower watt density susceptors, but in both cases the mass of the heater is high due to desirably maintaining a constant temperature setting.

0006In addition, if the susceptor is used for processes running at substantially different temperatures, it can take an undesirably long time to heat and/or cool the susceptor from one process temperature to another. Accordingly, improved susceptors, which can be used to process substrates at different temperatures and that are capable of rapidly changing substrate temperature, are desired.

SUMMARY OF THE DISCLOSURE

0007Various embodiments of the present disclosure provide susceptor assemblies, reactors and systems including the susceptor assemblies, and methods of using the susceptor assemblies, reactors, and systems. The susceptor assemblies described herein are suitable for use in a variety of gas-phase processes, such as chemical vapor deposition processes (including plasma-enhanced chemical vapor deposition processes), gas-phase etching processes (including plasma-enhanced gas-phase etching processes), gas-phase cleaning (including plasma-enhanced cleaning processes), and gas-phase treatment processes (including plasma-enhanced gas-phase treatment processes). As set forth in more detail below, exemplary susceptor assemblies, reactors, systems and methods are particularly well suited for processes that include multiple processes and/or that desirably run at multiple temperatures within a reaction chamber.

0008In accordance with various embodiments of the disclosure, a susceptor assembly includes multiple sections that can move independently of each other to readily allow processing of a substrate within a reaction chamber at different temperatures. In accordance with various aspects of these embodiments, the susceptor assembly includes a susceptor first section, a susceptor second section, and a mechanism to move the susceptor first section relative the susceptor second section. To facilitate rapid provision of different substrate temperatures within a reaction chamber, the susceptor first section can be formed of a first material and the susceptor second section can be formed of a second material. In accordance with some exemplary aspects of these embodiments, the susceptor first section and the susceptor second section are coaxial. The susceptor first section and the susceptor second section can be parallel in some configurations, and when one of the susceptor first section and the susceptor second section are moved relative to the other section, the sections can remain parallel each other. The susceptor first section can be formed of a relatively low mass and/or high watt density heating material, compared to the susceptor second section, which can be formed of a relatively high mass material. The susceptor second section material can be, for example, a heat sink, and can be cooled with a fluid, such as water. During operation, a substrate can be heated with the susceptor first section to obtain a substrate temperature of about 200° C. to about 600° C. The substrate can heated or cooled with the susceptor first section and the susceptor second section to obtain a substrate temperature of about 10° C. to about 200° C.

0009In accordance with further exemplary embodiments of the disclosure, a reactor includes one or more susceptor assemblies as described herein.

0010In accordance with yet additional exemplary embodiments of the disclosure, a reactor system includes one or more susceptor assemblies as described herein.

0011And, in accordance with yet additional exemplary embodiments of the disclosure, a gas-phase method includes the steps of placing a substrate on a surface of a susceptor assembly, exposing the substrate to a first process when a susceptor first section is in a first position and at a first susceptor temperature, moving the susceptor first section relative to the susceptor second section to a second position, and exposing the substrate to a second process at a second susceptor temperature. In accordance with various aspects of these embodiments, the first temperature is higher than the second temperature. For example, the first temperature can be in a range of about 200° C. to about 600° C.; the second temperature can be in a range of about 10° C. to about 200° C. In accordance with further aspects of these illustrative embodiments, a conductance from a reaction zone of a reaction chamber to a vacuum source varies as the susceptor first section and the susceptor second section are moved relative to each other.

0012Both the foregoing summary and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure or the claimed invention.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

0013A more complete understanding of exemplary embodiments of the present disclosure can be derived by referring to the detailed description and claims when considered in connection with the following illustrative figures.

0014<figref idref="DRAWINGS">FIG. <b>1</b></figref> illustrates a gas-phase reactor, including a susceptor assembly, wherein a susceptor first section is spaced apart from a susceptor second section in accordance with various embodiments of the disclosure.

0015<figref idref="DRAWINGS">FIG. <b>2</b></figref> illustrates a gas-phase reactor, including a susceptor assembly, wherein a susceptor first section is above a susceptor second section in accordance with various embodiments of the disclosure.

0016<figref idref="DRAWINGS">FIG. <b>3</b></figref> illustrates a susceptor first section in accordance with exemplary embodiments of the disclosure.

0017<figref idref="DRAWINGS">FIG. <b>4</b></figref> illustrates a reactor system, including a susceptor assembly, in accordance with additional exemplary embodiments of the disclosure.

0018<figref idref="DRAWINGS">FIG. <b>5</b></figref> illustrates a gas-phase method in accordance with further exemplary embodiments of the disclosure.

0019It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve the understanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS OF THE DISCLOSURE

0020The description of exemplary embodiments provided below is merely exemplary and is intended for purposes of illustration only; the following description is not intended to limit the scope of the disclosure or the claims. Moreover, recitation of multiple embodiments having stated features is not intended to exclude other embodiments having additional features or other embodiments incorporating different combinations of the stated features.

0021As set forth in more detail below, various embodiments of the disclosure relate to susceptor assemblies, reactors and reactor systems that include a susceptor assembly, and to methods of using the susceptor assemblies, reactors, and systems. The susceptor assemblies, reactors, systems, and methods can be used for a variety of gas-phase processes, such as deposition, etch, clean, and/or treatment processes. The susceptor assemblies can be used to rapidly change susceptor and therefore a substrate temperature. Thus, exemplary susceptor assemblies can be used to perform multiple processes at different susceptor temperatures, within a reaction chamber.

0022<figref idref="DRAWINGS">FIGS. <b>1</b> and <b>2</b></figref> illustrate a gas-phase reactor <b>100</b> in accordance with exemplary embodiments of the disclosure. Gas-phase reactor <b>100</b> includes a reaction chamber <b>102</b>, a susceptor assembly <b>104</b>, and a gas distribution system <b>106</b>, a first vacuum source <b>108</b>, and a second vacuum source <b>110</b>. Although not illustrated, system <b>100</b> may additionally include direct and/or remote plasma and/or thermal excitation apparatus for one or more reactants and/or within reaction chamber <b>102</b>.

0023Reactor <b>100</b> can be used to deposit material onto a surface of a substrate <b>112</b>, etch material from a surface of substrate <b>112</b>, clean a surface of substrate <b>112</b>, treat a surface of substrate <b>112</b>, deposit material onto a surface within reaction chamber <b>102</b>, clean a surface within reaction chamber <b>102</b>, etch a surface within reaction chamber <b>102</b>, and/or treat a surface within reaction chamber <b>102</b>. Reactor <b>100</b> can be a standalone reactor or part of a cluster tool. Further, reactor <b>100</b> can be dedicated to deposition, etch, clean, or treatment processes, or reactor <b>100</b> may be used for multiple processes—e.g., for any combination of deposition, etch, clean, and treatment processes. By way of examples, reactor <b>100</b> can include a reactor typically used for chemical vapor deposition (CVD) processes, such as atomic layer deposition (ALD) processes. As set forth in more detail below, use of susceptor assembly <b>104</b> allows rapid change and control of a substrate temperature within reaction chamber <b>102</b>, and thus facilitates subjecting substrate <b>112</b> to multiple temperatures during one or more processes within reaction chamber <b>102</b>.

0024Susceptor assembly <b>104</b> is designed to hold substrate <b>112</b> in place during processing. As discussed in more detail below, one or more sections of susceptor assembly <b>104</b> can be heated, cooled, or be at ambient process temperature during processing.

0025As illustrated in <figref idref="DRAWINGS">FIGS. <b>1</b> and <b>2</b></figref>, susceptor assembly <b>104</b> includes a susceptor first section <b>114</b>, a susceptor second section <b>116</b>, and a mechanism <b>118</b> to move susceptor first section <b>114</b> relative to susceptor second section <b>116</b>.

0026In the illustrated example, mechanism <b>118</b> moves susceptor first section <b>114</b> relative to susceptor second section <b>116</b> and susceptor second section <b>116</b> is stationary within reaction chamber <b>102</b>. However, in accordance with other configurations in accordance with exemplary embodiments of the present disclosure, mechanism <b>118</b> moves susceptor second section <b>116</b> relative to susceptor first section <b>114</b>. Alternatively, mechanism <b>118</b> can move both susceptor first section <b>114</b> and susceptor second section <b>116</b>.

0027Mechanism <b>118</b> can include any suitable apparatus capable of moving susceptor first section <b>114</b> relative to susceptor second section <b>116</b>. By way of example, mechanism <b>118</b> includes a servo motor to drive susceptor first section <b>114</b> along an axis. Mechanism <b>118</b> can suitably reside outside reaction chamber <b>102</b>.

0028Susceptor first section <b>114</b> can be configured to rapidly heat substrate <b>112</b> to a desired temperature. For example, susceptor first section <b>114</b> can be configured to rapidly heat substrate <b>112</b> for high temperature processing (e.g., in the range of about 200° C. to about 600° C., about 200° C. to about 310° C., or about 250° C. to about 500° C. Such high-temperature processes can be used to, for example, pre-treat substrate <b>112</b> surface, to degas substrate <b>112</b>, or the like.

0029To allow rapid heating of susceptor first section <b>114</b>, susceptor first section <b>114</b>, in accordance with examples of the disclosure, is of relatively low mass—e.g., about 150 g to about 450 g, or about 450 g to about 3000 g. Further, susceptor first section <b>114</b> can include a relatively high watt density—e.g., about 70 W/cm2 to about 100 W/cm2, or about 50 W/cm2 to about 200 W/cm2.

0030Exemplary materials suitable for susceptor first section <b>114</b> include ceramics, such as boron nitride, aluminum nitride, quartz, and ceramic-coated materials, such as ceramic-coated metals. Susceptor first section <b>114</b> can also include resistive heating material. Exemplary materials suitable for resistive heating material include Tungsten (W), Nichrome (NiCr), Cupronickel (CuNi), Graphite©, Molybdenum Disilicide (MoSi2) or any other suitable heater material. The resistive heating material can be coated onto (e.g., patterned onto), for example, ceramic or ceramic-coated metal. Susceptor first section <b>114</b> can include an additional protective layer formed overlying the resistive heating material. The protective layer can be formed of, for example, ceramic material.

0031<figref idref="DRAWINGS">FIG. <b>3</b></figref> illustrates an exemplary susceptor first section <b>114</b>, which includes a first layer <b>302</b>, a second layer <b>304</b>, and a third layer <b>306</b>. First layer <b>302</b> can include any suitable substrate, such as ceramic or metal-coated with insulating (e.g., ceramic) material. Layer <b>304</b> can include electrically resistive heating material, such as the exemplary resistive material described above. Layer <b>304</b> can be a solid layer or patterned (e.g., serpentine). Finally, layer <b>306</b> can include ceramic or other suitable material. Although illustrated with three layers, susceptor first section <b>114</b> can be formed of a single material, two layers, or more than three layers.

0032Susceptor second section <b>116</b> can be configured to provide substrate <b>112</b> with a lower temperature—e.g., a temperature in the range of about 10° C. to about 200° C., about 5° C. to about 100° C., or about 15° C. to about 60° C., or about 100° C. to about 200° C. For example, the lower substrate temperature can be obtained by lowering susceptor first section <b>114</b> near (e.g., with 1-15 mm) or adjacent to susceptor second section <b>116</b>.

0033To facilitate a rapid change (e.g., decrease) in temperature provided to substrate <b>112</b>, susceptor second section <b>116</b> can have a relatively high mass (e.g., about 6000 g to about 12,000 g, or about 12,000 g to about 16,000 g). In this case, susceptor second section <b>116</b> can act as a heat sink: to cool susceptor first section <b>114</b> and substrate <b>112</b>. Susceptor second section <b>116</b> can include fluid (e.g., water) lines <b>120</b> to maintain susceptor second section <b>116</b> at a desired temperature.

0034Susceptor second section <b>116</b> can be formed of a second material (e.g., different from the first material of susceptor first section <b>114</b>). Exemplary materials suitable for susceptor second section <b>116</b> include aluminum, nickel coated aluminum, 316 SS, Tungsten, Hastelloy, Inconel, Nickel or any suitable material.

0035A configuration of susceptor first section <b>114</b> and susceptor second section <b>116</b> can vary according to application and reactor design. In the illustrated example, susceptor first section <b>114</b> overlies susceptor second section <b>116</b>. Susceptor first section <b>114</b> can move from a position near (or adjacent) susceptor second section <b>116</b> to a position away from susceptor second section <b>116</b>. The distance between susceptor first section <b>114</b> and susceptor second section <b>116</b> can range from about 0 to about 35 mm, or about 10 mm to about 25 mm, or about 10 mm to about 30 mm.

0036As illustrated, susceptor first section <b>114</b> can have a larger diameter than susceptor second section <b>116</b>. Alternatively, susceptor first section <b>114</b> can have the same, or a smaller diameter than susceptor second section <b>116</b>, depending on, for example, reactor configuration and desired gas flow characteristics within reaction chamber <b>102</b>.

0037In the illustrated example, susceptor first section <b>114</b> is shaped as a solid cylinder. However, susceptor first section <b>114</b> can have any suitable shape, including a hollow cylinder that can rest in a coplanar position relative to a top surface of susceptor second section <b>116</b>.

0038Similarly, susceptor second section <b>116</b> can include any suitable shape, such as a solid or hollow cylinder, or the like.

0039<figref idref="DRAWINGS">FIGS. <b>1</b> and <b>2</b></figref> illustrate how a gas flow pattern can be altered by moving susceptor first section <b>114</b> relative to susceptor second section <b>116</b>. In <figref idref="DRAWINGS">FIG. <b>1</b></figref>, susceptor first section <b>114</b> in a first position spaced apart from susceptor second section <b>116</b> allows gas within reaction chamber <b>102</b> to readily flow between susceptor first section <b>114</b> and reaction chamber wall <b>203</b> through a first fluid path <b>204</b> in the direction of the arrows toward first vacuum source <b>108</b>. In <figref idref="DRAWINGS">FIG. <b>2</b></figref>, susceptor first section <b>114</b> is in a second position near or adjacent to susceptor second section <b>116</b>, restricting gas flow between susceptor first section <b>114</b> and reaction chamber wall <b>203</b> through first fluid path <b>204</b> (relative to the gas flow through first fluid path <b>204</b> created by susceptor first section <b>114</b> being further from susceptor second section <b>116</b> and/or reaction chamber wall <b>203</b> (e.g., susceptor first section <b>114</b> being in the first position)) and allowing gas within reaction chamber <b>102</b> to flow through a second fluid path <b>206</b> in the direction of the arrows toward second vacuum source <b>110</b>.

0040First and/or second vacuum sources <b>108</b>, <b>110</b> may be in fluid communication with reaction chamber <b>102</b>. First and second vacuum sources <b>108</b>, <b>110</b> can include any suitable vacuum source capable of providing a desired pressure in reaction chamber <b>102</b>. By way of examples, vacuum source <b>108</b> can include a pump to maintain a high vacuum (e.g., in the range of about 5×10-7 Torr to about 500 Torr)—e.g., turbomolecular pump; second vacuum source <b>110</b> can include, for example, a dry vacuum pump alone or in combination with a turbomolecular pump. Although illustrated as two separate sources, in accordance with other exemplary embodiments, reactor <b>100</b> can include one or more than two vacuum sources. Multiple vacuum sources can be coupled to the same vacuum pump. In this case, a conductance of the multiple sources can vary.

0041The change in gas flow conductance can be used in combination with varying substrate temperatures to obtain desired reaction rates and uniformity across substrate <b>112</b> surface.

0042Referring again to <figref idref="DRAWINGS">FIGS. <b>1</b> and <b>2</b></figref>, reactor <b>100</b> can include a gas inlet <b>122</b> to receive and facilitate distribution of one or more gases to reaction chamber <b>102</b>. Although gas inlet <b>122</b> is illustrated in block form, gas inlet <b>122</b> may be relatively complex and be designed to mix gas (e.g., vapor) from reactant sources and/or carrier/purge gases from one or more sources prior to distributing the gas mixture to reaction chamber <b>102</b>. Further, gas inlet <b>122</b> can be configured to provide vertical (as illustrated) or horizontal flow of gases to chamber <b>104</b>. An exemplary gas distribution system is described in U.S. Pat. No. 8,152,922 to Schmidt et al., issued Apr. 10, 2012, entitled “Gas Mixer and Manifold Assembly for ALD Reactor,” the contents of which are hereby incorporated herein by reference, to the extent the contents do not conflict with the present disclosure. Gas inlet <b>122</b> can optionally include an integrated manifold block designed to receive and distribute one or more gases to reaction chamber <b>104</b>. An exemplary integrated inlet manifold block is disclosed in U.S. Pat. No. 7,918,938 to Provencher et al., issued Apr. 5, 2011, entitled “High Temperature ALD Inlet Manifold,” the contents of which are hereby incorporated herein by reference, to the extent the contents do not conflict with the present disclosure.

0043<figref idref="DRAWINGS">FIG. <b>4</b></figref> illustrates a system <b>400</b> in accordance with various exemplary embodiments of the disclosure. System <b>400</b> includes reactor <b>402</b>, which includes a susceptor assembly <b>404</b>. Reactor <b>402</b> and susceptor assembly <b>404</b> can be the same or similar to reactor <b>100</b> and susceptor assembly <b>104</b>.

0044System <b>400</b> also includes one or more reactant sources <b>406</b>, <b>408</b> and a carrier and/or purge gas source <b>410</b>. Reactant gas sources <b>406</b>, <b>408</b> can each include one or more gases, or materials that become gaseous, that are used in deposition, etch, clean, or treatment processes. Exemplary gas sources include Halogens, NF3, HH3, HCL, H2O/H2O2 Vapor. Although illustrated with two reactant gas sources <b>406</b>, <b>408</b>, systems in accordance with the disclosure can include any suitable number of reactant sources.

0045Purge/carrier gas source <b>410</b> includes one or more gases, or materials that become gaseous, that are relatively unreactive in reactor <b>402</b>. Exemplary purge gases include nitrogen, argon, helium, and any combinations thereof. Although illustrated with one purge gas source, systems in accordance with the present disclosure can include any suitable number of purge gas sources. Further, one or more purge gas sources can provide one or more carrier gases and/or system <b>400</b> can include additional carrier gas sources to provide a carrier gas to be mixed with one or more gases from a reactant source, such as sources <b>406</b>, <b>408</b>.

0046Turning now to <figref idref="DRAWINGS">FIG. <b>5</b></figref>, a gas-phase method <b>500</b> is illustrated. Method <b>500</b> includes the steps of placing a substrate on a surface of a susceptor assembly (step <b>502</b>), exposing the substrate to a first process (step <b>504</b>), moving a susceptor first section relative to a susceptor second section to a second position (step <b>506</b>), and exposing the substrate to a second process at a second susceptor temperature (step <b>508</b>). In accordance with exemplary aspects of these embodiments, the first process and the second process can be run at different temperatures. For example, the first process can be run at a temperature of about 200° C. to about 600° C.; the second process can be run at, for example, 10° C. to about 200° C. Additionally or alternatively, the substrate can be exposed to different reactants or inert gases during the first and second processes. And, the gas flow patterns can be varied, as described above, for the first and second processes. One or more of these changes can be made to distinguish the first process from the second process. The first and second processes can be the same (e.g., deposition) or different (e.g., clean, deposition) types of processes.

0047Although exemplary embodiments of the present disclosure are set forth herein, it should be appreciated that the disclosure is not so limited. For example, although the susceptor assemblies, reactors systems, and methods are described in connection with various specific configurations, the disclosure is not necessarily limited to these examples. Various modifications, variations, and enhancements of the exemplary susceptor assemblies, reactors, systems, and methods set forth herein may be made without departing from the spirit and scope of the present disclosure.

0048The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various systems, assemblies, reactors, components, and configurations, and other features, functions, acts, and/or properties disclosed herein, as well as any and all equivalents thereof.