Method and system for laser-based wavelength specific infrared irradiation treatment

'Y'

UKRAINE

(19) and A (11) 94751 (13) C2

(51) IPC

В29С 47/92 (2006.01)

MINISTRY OF EDUCATION SCIENCE OF UKRAINE

STATE DEPARTMENT OF INTELLECTUAL PROPERTY

DESCRIPTION

TO THE INVENTORY PATENT

(54) METHOD AND SYSTEM FOR LASER, SPECIFIC WAVE LENGTH, PROCESSING INFRARED BY THE RADIATION

1

(21) a200814060

(22) Jun 06, 2007

(24) Jun 10, 2011

(86) PCT / 32007/013306, 06.06.2007

(31) 11 / 448,630

(32) 07.06.2006

(33) from

(46) 10.06.2011, BUL No. 11,2011 g.

(72) KOCHREN DON V., CZ, KCH STIVEN D., CZ, MORGAN NOEL EDWARD Z., CZ, ROSS DEN-WOOD F., Iii, from

(73) Press techno-technology, from

(56) from 20060048881 A1; March 09, 2006

of 6361301 B1; 26.03.2002

from 20060118983 A1; June 08, 2006

(57) 1. System for contactless thermal treatment of plastic target parts, pre-formed or machined, which includes: means acting on the placement of plastic target parts in a way that facilitates the use of heat-shrinking heating; and

the site of thermal control and control, in which the plastic parts are arranged for irradiation, the area of ​​thermal observation and control rolls includes one or more solid state laser diodes with a red base, to isolate the infrared energy emitted in the narrow range of the wavelength, which leads to the desirability of the desired absorbing properties of the formation of mass target parts in the range of length waves from 1.1 to 5.0 microns due to the direct conversion of the electric current-to-photon, and where the lasers are located in the matrix These so-ting a significant radiating energy, which highlights the matrix fell apart target details.

2. The system of claim 1, wherein the laser grain diodes are manufactured using materials based on phosphate indium.

3. A system according to any one of claims 1 to 2, characterized in that at least one wavelength is used to irradiate the target, selected in accordance with the basic characteristics of the absorption of the materials of the target composition at the selected wavelength and selected to optimize at least one from the well-known depth of heating, heat penetration, skin heating, heating location, heating speed or heated thickness.

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4. The system of claim 1, characterized in that at least one diode operates to remove radiation energy with a wavelength of 1.0 to 3.0 micrometers.

5. The system of any one of claims 1 to 4, characterized in that at least two wavelengths are selected to irradiate the target due to the characteristic of the absorption indices for each wavelength in at least some of the target component material of the composition.

6. The system according to any one of claims 1 to 3, characterized in that the plastic target components include at least one of the RT preforms, RI_Accessories, PPE blanks or PET bottles during the production process of the bottle.

7. The system according to any one of claims 1 to 6, characterized in that it comprises at least one means for fixing a broadband radiation source closer to the transport path through the field of thermal control and processing, such that increasing radiation from radiation diodes from a broadband source.

8. The system according to any one of claims 1 to 7, characterized in that it additionally includes at least a one-flopped mirror, an approximately cylindrical mirror, or a distorted mirror, especially shaped to facilitate the improved delivery of thermal infra-red radiating energy from the furnace One of the same laser diode in the target.

9. A method for heating a thermoplastic workpiece preceding the stretching operation with a blown formulation comprising the steps of:

transportation with periodic repetition of the billets through the section of thermal control and control of the blow molding machine; the rise of the temperature of the blanks to the desired processing temperature by irradiating the workpieces using laser diodes, arranged to allocate at least one selected narrow wavelength of the heat-infrared radiation energy that corresponds to the desired absorbent the properties of the forks and which falls on the selected parts of the workpieces;

removal of unnecessary heat from the components of the thermal control section and controlling the blown-out machine using the cooling system.

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10. The method of claim 9, wherein the la-grain diodes are manufactured using materials based on phosphate indium.

11. The method of claim 10, wherein at least one diode operates to remove the radiation energy of a wavelength from 1.0 to 3.0 microns.

12. The system for the selective introduction of thermal infrared radiation into an object, the systemincludes:

at least one solid-state emitting laser diode, at least one laser diode, which is one of the radiating thermal infrared energy in the selected length of the microwave to match the desired absorbent properties associated with the target;

means for placing targets in such a way that they can be heated by an irradiation system, which is based on laser diodes; Determine the position of the fastener when at least one laser-diode of the matrix is ​​such that its irradiation is directed to the selected parts of the target; and a means for controlling the choice of time and the amount of electrical current for at least one laser diode, through which the process of direct conversion of the electric current-to-photon, which produces thermal radiation energy.

13. The system of claim 12, wherein the laser diodes are manufactured using phosphorus-based matrices.

14. The system of claim 12, characterized in that at least one diode operates to remove the energy of the n-rays with a wavelength from 1.0 to 3.0 microns.

15. The system according to any one of the preceding claims. 12-14, which is distinguished by the fact that at least one laser diode takes the form of the matrix X on Y of individual lasersdiodes of irradiation so that the model output of radiation from each device at least partly covers the products of neighboringdevices

16. The system, according to any of the preceding claims. 12-15, which is distinguished by the fact that at least one laser diode takes the form X on the Y matrix of laser-diode devices, and both X and Y are larger than one.

17. The system according to any one of the preceding claims. 12-16, which is distinguished by the fact that the matrices are in the form of at least one matrix of the built-in chip, the integrated communication line, or the matrix of the spherical-net reinforcement of individual devices, in order to facilitate the direction of radiation to the target.

18. The system according to any one of the preceding claims. 12-17, which is distinguished by the fact that the circuit boards on which the laser diode devices are installed are the motherboard configurations selected to divert heat from laser diode devices using at least one mounting board, the material of which is more conductive than normal, heating drains or cool liquid shirts.

19. The system of claim 18, wherein the means for conducting heat include a liquid-heat shoe that transfers the heat to at least one of the significant distances from the system from the manufacturing plant or to the outside position.

20. The system according to any one of the preceding claims. 12-19, which is distinguished by the fact that the means for the location of the warehouse are provided from the means of transportation, with which the targets are moved periodically through the region of heating by radiation, including the path of transfer in and the path of movement from a given region.

21. The system according to any one of the preceding claims. 12-20, which is distinguished by the fact that the programmable control system further includes at least one input integral sensor to control other target parameters in order to provide data used in modification of at least one aspect of the output radiation system and wherein at least one intelligent sensor includes photosystem.

22. The system according to any of the preceding claims. 12-21, which is distinguished by the fact that it further includes a control system executed for the separate control of at least one of: the status of the on / off, the flow of the electric current, and the locations of the actuated devices for each wavelength represented in the matrix and scanner models.

23. The system according to any one of the preceding claims. 12-22, which is distinguished by the fact that the pulse control system stimulates the system at levels of electric current that are substantially larger than the recommended stable, static current levels in order to achieve a higher instantaneous instantaneous pulse output such that The system that responds to the input signal determines the choice of pulse operation time.

24. The system of claim 22, characterized in that the scanning device is capable of configuring the transmission of radiative energy through two-dimensional or three-dimensional scanning models synchronized with vehicles that move the target through the radiation region and such that at least one duration of the region , the frequency of radiation at any given time and placement of radiation can be directional-not a control system.

25. A method for introducing heat into a target, which includes: positioning the target for exposure with at least one laser radiation emitting diode;

layout of at least one laser diode in order to direct its radiation to the target: electrically driven by an electric current to at least one laser emitting diode; and

the choice of at least one laser diode, representing at least one specific narrow length of the radiation wave, to match the predominant characteristics of the absorption of the target;

further, choosing at least one laser diode so that the emission of radiating energy is in a narrow zone in the range of 1.1 to 5.0 microns; the selective introduction of heat in at least one specific narrow wavelength is bounded by the radiation from the emitting thermosetting diode.

26. The method of claim 25, wherein the laser diodes are manufactured using phosphorus-based matrices.

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27. The method of claim 25, wherein at least one diode operates to remove the energy of a y-ray with a wavelength of 1.0 to 3.0 microns.

28. The method of any one of claims 25-27, which is characterized in that it comprises measuring at least one

the temperature of each individual target and the closure of the tour through the parcel of the necessary control signals to irradiate each target, as necessary to achieve a certain temperature.

The present invention relates to the direct input of a selected wavelength of heat-infrared (IR) radiation or energy-residual objects in a wide range of heating, treatment or treatment purposes. As will be described below, these goals may include heating, lifting or maintaining the temperature of objects, or stimulating the target object in a range of different industrial, medical, consumer or commercial circumstances. The methods and system described herein are particularly suitable for operations that require either benefit from the ability to irradiate the selected wavelengths, or work in pulsed mode, or to enter radiation. The invention has particular advantages when the target moves at high speeds and in a non-invasive environment with a target. The invention provides an infrared laser system of selected narrow-wave wavelengths, which is highlyprogrammed for a wide range of end applications. The invention teaches a new and original type of infrared radiation system, consisting of one or more lasers, is best if they are made of a new class of wavelength bandwidth of solid-state, emitting radiation devices (ΕΕёε), one variant of which is later in this document will be a special reference.

More specifically, this invention is directed to a new and effective method of introducing one or more specific optimal wavelengths of infrared radiation into the target, for the sake of, to a certain extent, the effect on the temperature of the target. To refer to a small sample of examples, the "target" for infrared injection may be a wide variety of objects ranging from indo-ouial components in the technological operation, to the area of ​​processing on a continuous roll of material, to food in the process of cooking, or human patients in medical treatment environment.

Although the particular embodiment of the invention described hereafter is an example that is fully related to the operation of pre-heating the plastic bottle, the ideas contained in the invention also relate to many other well-known scripts. This also applies to one-stage operations of blowing up plastic bottles, where the inoculation-forming operation is performed long-time, only until the blow molding operation. In the development of this, for example, the methods and apparatus of the invention offer such advantages over a prior art, but use dual control and control to deal with

with a variation in the initial temperature at the entrance to the preheating process.

In general, the ideal infrared heating system optimally raises the temperature of the whole with the smallest amount of energy consumption. Such a system may include a device that can directly convert its input power to the source of the electromagnetic energy, with a selected single or narrow range of wavelengths that are aimed at the target, so that the energy that is contained in the radiation is partially or completely absorbed by the target and converted to heat, rather than more efficiently, the input electric energy is transformed into a vortex the electromagnetic radiation is emitted, the more effectively it can work the system, rather than more efficiently distorting electromagnetic waves aimed at affecting only certain areas on the target, the more efficient the system will perform its work. Emulating radiation is a device chosen for use, should have instantaneous features "on" and "off", so that when the target is not exposed, neither the input nor the initial energy is used in vain, than the more efficiently exhibited target absorbs the radiating electromagnetic energy to directly convert its heat, thereby the system can function more efficiently. For an optimal system, attention should be paid to properly select the set of output wavelengths of the system to respond to the absorbing target characteristic. These lengthswill likely to be chosen differently for different purposeful applications of the invention, in order to best satisfy various absorption characteristics of different materials as well as meetvarious desired results. nor the source energy is used in vain, but more effectively, the exponential target absorbs the emitting electromagneticenergy, to directly convert its warmth, the more efficiently the system can function. For an optimal system, attention should be paid to properly select the set of output wavelengths of the system to respond to the absorbing target characteristic. These lengthswill likely to be chosen differently for different purposeful applications of the invention, in order to best satisfy various absorption characteristics of different materials as well as meetvarious desired results. nor the source energy is used in vain, but more effectively, the exponential target absorbs the emitting electromagneticenergy, to directly convert its warmth, the more efficiently the system can function. For an optimal system, attention should be paid to properly select the set of output wavelengths of the system to respond to the absorbing target characteristic. These lengthswill likely to be chosen differently for different purposeful applications of the invention, in order to best satisfy various absorption characteristics of different materials as well as meetvarious desired results. attention should be paid to properly select the set of output wavelengths of the system to respond to the absorbing target characteristic. These lengthswill likely to be chosen differently for different purposeful applications of the invention, in order to best satisfy various absorption characteristics of different materials as well as meetvarious desired results. attention should be paid to properly select the set of output wavelengths of the system to respond to the absorbing target characteristic. These lengthswill likely to be chosen differently for different purposeful applications of the invention, in order to best satisfy various absorption characteristics of different materials as well as meetvarious desired results.

On the contrary, it is well known at the level of technology and industry to use a range of different types of radiating heating systems for a wide range of processes and treatments. Technologies that were previously available for these purposes offer a relatively broad spectrum of emitting radiation from electromagnetic energy. They may relate to infra-red heating, treatment, or processing systems, whereas in fact they often produce radiation energy significantly Beyond infrared spektrom.

The infrared part of the spectrum is generally divided into three classes by wavelength. They generally are delimited as zones of wavelengths of near-infrared, medium-infrared and long-infrared (spectrum). At that time, precise limits are not clearly established for these common

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It is generally accepted that the near-infrared region covers the range that stems from the upper limit of human visibility (about 780 nanometers) to 1.5 micrometers. The median infrared region covers the range zones from 1.5 to 5 micrometers. Long-infrared area, as generally accepted, is between 5 and 14 micrometers and beyond. In general, it is considered that the correct thermal infra-red (spectrum) consists ofmedium, long and ultra-long zones of longvils. In contrast to the above, near-infrared radiation tends to behave much more like an invisible light-la.

Radiating infrared source, whichused in industrial, commercial andmedical treatment of heating or the process in which the equipment pre-produces a wide dia-particle wavelengths, which are rarely limited to onezone of the infrared spectrum. Although their wide-ranging output range can reach a maximum in a specific range of the infrared spectrum, they typically have output balances of the range, as the parts extend in adjacent areas.

As an example, quartz infrared heaters, which are well-known in the art and are used for various heating operations, often produce an output peak in the range from 0.8 to 1 micrometer. Although the peak output can be between 0.8 and 1 micrometer, these lamps have a significant outflow in a broad continuous spectrum of UV-wave zones from the visible to the visible and then up to about 3.5 micrometers in the mid-infrared. It is clear that although the output quartz lamp is in the near-infrared range, there is a significant output both in the visible range, and in the middle-infrared range. As a result, it is non-fussy with a wide spectrum of infrared sources, to choose either a better wavelength or wavelength that would be most desirable for any given application of heating, obrobki or treatment. This is the essence of a wide range of processing or process and is widely used, as there were no practical alternatives to the present invention, except, for example, related Applications No. 11/003,679 (filed December 3, 2004) and 011/351, 030 filed February 9, 2006, both of which the link is included here. The primary increase intemperature for many purposes occurs throughabsorption of thermal IR energy in one or more narrow zones of wavelength. Thus, the white part of the broadband! ' Infrared output energy is wasted in vain. The primary increase intemperature for many purposes occurs throughabsorption of thermal IR energy in one or more narrow zones of wavelength. Thus, the white part of the broadband! ' Infrared output energy is wasted in vain. The primary increase intemperature for many purposes occurs throughabsorption of thermal IR energy in one or more narrow zones of wavelength. Thus, the white part of the broadband! ' Infrared output energy is wasted in vain.

However, quartz infrared lamps are widely used in industry for discrete components, as well as in the industrial sectors and with the processing of continuous materials. To help-direct emissions from quartz lamps to the goal of the process, typically uses a variety of methods, including a variety of types of reflexes. Regardless of how energy focuses on the target, typically quartz lamps are continuously under voltage. This is true and everywhere during the process is the material being produced

continuously, and with discrete components. First of all, the reason for this is the relatively short time of thermal operation of quartz lamps, which is typically measured in seconds. Quartz lamps are "slow-on-on" and "slow-shut-off" devices, and can not be practical and productive to quickly switch on and off, or operate in a pulsating mode in short periods of time.

The branch of the special need for improved energy injection refers to operations of blow-molding. More specifically, before the execution of operations of stretching blown form, a system of blow molding, stretching of plastic bottles, thermal, prepare billets. One aspect of this process is known in the art as a heating operation. In the heating operation, the billets that were formed by the process of thermal injection-pressing or compression pressing, allow the thermal cool down and stabilize to the ambient temperature or room temperature. At a later time, which is usually days or weeks, the workpieces are fed to the system by stretching the blow molding, which at an early stage heats the preforms to a temperature, the selected part of the thermoplastic material of the preform is at a temperature, optimal for subsequent operations of blow molding. This condition meets the requirements whilst the workpieces are transported through the heating section, or the stove along the way to the section of the blow molding machine. In the section of blown-up molding, workpieces are initially mechanically stretched, and then blown typically with multiple stages with high pressure air, to the vessel or containers of greater volume. An example of suchcontainer - available PET bottle for water orgasy soft drinks.

Energy consumption consumption is a significant percentage of the value of the finished object, which is made using operations of spinning and is typically the highest level of production. More specifically, the amount of energy required by the technology of the state of the art so that, so far, in order to heat or thermally prepare the preforms of Polyethylene Terephthalate (PET) from ambient temperature to 105 ° C in the section of heating the stretching machine with blow molding, is quite substantial. Beginning with all production measures to improve efficiency, there will be clear benefits from both economic and eco-logical point of view, reducing the consumption of energy associated with the operation to create the necessary conditions for the thermal section of the stretching systems by blowing molding.

For further clarification, modern practice is the irradiation of containers with radiation-induced energy from the multiplicity of quartz infra-red H-VII lamps, organized in the tunnel. The energy from each lamp changes roughly, in this way, providing a very small measure of compatibility with the radiation on different segmentscontainer. Most of the energy from the lamps is not absorbed by the container at all, or absorbed into the ambient air and mechanical holders

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Weights, thus significantly reducing the total efficiency. Some effort is made to reduce unwanted heating; air is blown on-around the tunnel to 1) cool the outer shellcontainer (which is desirable), and 2) combine more energy into containers by convection througharmally heated air.

The inconvenience of the modern method is the unnecessary heating of the air and adjacent structures, the insufficient ability to regulate the distribution of irradiation on the container, the requirements of large physical space, the inability to selectively heat individual parts or zones on the workpieces, reduced the ability to quickly adapt the distribution of heating, to new requirements, such as serial reconfiguring containers of various sizes, and side effects, caused by the same reasons, problems. For example, non-over-absorption of light by the container's harvest, you are calling for increased energy supply for the tunnel, increased power supply to remove over-left heat in the plant, more promoter for the tunnel, to allow more gradualethe homogeneous heating, more frequent intervalservice for burned-out lamps, and more instability in heating from unobtrusive damage to lamps.

American Patent Number 5,322,651 describes an improvement in the method of thermal treatment of thermoplastic blanks. This patent describes the usual practice of using widescreen infrared (IR) radiation for thermal processing of plastic blanks. Whether the text of this patent is quoted, "Compared with other ways of heating or heat treatment, such as convection and heat conduction, and considering the low coefficient of thermal conductivity of mate rial, the heating using the use ofmade-ray radiation yields initial weights and allows you to increase production rates . "This patent describes broadband infrared sources that are usually used throughout in the modern PET industry.

Specific improvement to the current level of development of the technology described in this patent relates to a method in which super-energy energy is controlled, emitted during the heating of the preparation, in particular, the patent refers to the energy emitted during the heating process, which eventually (through absorption in other places besides workpiece, heat conduction, and thenconvection) leads to an increase in the temperatureair in the furnace space surrounding the workpiece during transportation. Convection heating of the reservoir, caused by a stream of hot air, appears, leads to a heterogeneous heating of welds and, thus, has a detrimental effect on the technological operation. Also, waste energy spent must be processed by the plant's NWAS system, which in turn is another essential energy expense. Patent 5,322,

As one would expect, at the historical level of technology, the transfer of thermal energy from elements and

systems of broadband infrared heating to the supply, for which it is intended, is not fullyeffective process. Ideally, if 100% of the energy consumed for the heat preparation of the bundleswill be transferred to the space of selected parts of the exhaust system in the form of heat energy. Although this has not been specifically mentioned in the above-mentioned patents, the type of conversion efficiency (energy to transported blanks / energy consumed by ICH heating elements) in the range of 5% to 10% is claimed in the current state of the art for mas-blades of blow molding. Although it is almost important to measure, it is doubtful if the actual system efficiency of the transformation is even onthis level. Any improvement of the method or means associated with infra-red heatingproducts, which will improve,

There are many factors that together establish the efficiency of the energy conversion and the heating elements and systems used in blow molding machines due to the state-of-the-art technology. As noted, conventional heating thermoplastic blanks, such as preforms of the PET, are heated to a temperature of about 105 ° C. This is typically achieved in the mas-bins of blow molding of modern-level engineering using commercially available broadband quartz infrared lamps. High-speed / high-performance machines they often take the form of larger groups of very high-voltage lamps. The energy collected by all groups of quartz lamps becomes a huge current, the volume of which reaches many hundreds of kilowatts for the fastest cars. Two factors associated with these types of infrared heating elements,

Another coefficient that has a significant impact on the full efficiency of the transformation energy subsystems bringing to the necessary thermal conditions of blow molding machines in accordance with the state of the art technology is the current control, or the degree of focus, which is used to direct the infrared radiation emitted by heating elements in the space of billets transported through the system. In most of the blow molding machines in accordance with the state of the art, some steps are being taken to direct the infrared radiation emitted by quartz lamps to the space of the blanks. In particular, metallized ref-lecturers work well, reducing the amount of emitting radiation that is uselessly spent in these systems.

Another factor that has an impact on the efficiency of the energy conversion of the IC heating subsystem is the degree to which the input energy of typical stationary infrared heating

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elements, synchronized to the movement of blanks, moving through the heating system. If the fixed amount of input energy is continuously consumed by a stationary infrared heating element, even when, due to the continuous movement of the workpiece through the system, there are no billets in the immediate vicinity of the heater, the efficiency of the conversion of energy systems is obviously not optimized. In practice, the slow time of the physical operation of commercial quartz lamps and the relatively high speed transport of the workpiece in blow molding machines in accordance with the state-of-the-art technology eliminate any attempt at successful modulation of the input energy of the lamp to synchronize it with the moving part of the motor and thus achieve an advanced- Influence of the full efficiency of energy conversion.

U.S. Patent No. 5,925,710, U.S. Patent No. 6,022,920 to U.S. Patent No. 6,503,586Â1 - all describe similar methods for increasing the percentage of energy emitted by IR lamps, which will be absorbed by transport blankets, which are used in the process of blow molding. All these patents describe, varying the number of parts, the general practice of heating the machines of the blowing molding, respectively, the current level of technology using quartz lamps as infrared heaters. In the process of heating the pre-formed molding preforms, which were previously injection-compressed and stabilized to room temperature, were heated to a tempering blow that immediately preceded the operations of blow molding. The foregoing clauses describe how polymers in general, and in particular PETs, can be heated more effectively by the absorption of IR than, which is possible with the use of means of heat conduction or convection. In these patents, the absorption coefficient of the PET is measured in figures as a function of the wavelength. Numerous strong molecular absorption bands occur in PET, primarily in IR zones wavelength above 1.6 micrometers. Quartz lamps, as is known, emit radiation everywhere wide spectrum, the exact emission spectrum is determined by the temperature of the thread as determined in accordance with Planck Act.

As used in existing machines of die-cast molding, in accordance with the current level of technology, quartz lamps are driven by the temperature of the thread of approximately 3000 ° K. At this temperature, the lamps have a peak emitting emission of 0.8 micrometers. However, because the emission is the EMI-type of an absolutely black body, as is known from the level of technology, the quartz thread emits a continuous spectrum of energy from X-rays to a very long IR. At 3000 ° K, the emission grows through the visible area, reaches a peak at 0.8 micrometers, and then gradually decreases, since it begins to be imposed on the region of substantial absorption of PET, which begins at about 1.6 micrometers.

What is not described in any of these patents, the effect of the chain, which quartz bulb has an emitted spectrum of the lamp. Quartz material used to make a commercial flask qua-

The RTS lamps have an upper limit of transmission of approximately 3.5 micrometers. Outside of this wavelength, any energy emitted by a nested thread, by the way, is absorbed by the shell of a quartz glass that encloses the thread and therefore directly is not available for heating the workpiece.

Under the conditions set out above, in the existing machines for the injection molding, respectively, the current level of technology, using quartz lamps to preheat the PET preforms blowing temperatures, the range of absorbing heating occurs between 1 micrometer and 3.5 micrometers. The group of patents referred to above (5,925,710, 6,022,920, and 6,503,586 B1) all describe a different method and way to change the natural absorption properties of the workpiece, thus improving the overall efficiency of the energy conversion of the heating process. In all of these patents described as impurities are added to the material of the PRE preform, with the sole purpose of increasing the absorption coefficient mix. These described methods and means are intended to influence the properties of optical absorption of materials in the range from about-IR to about 0.8 microns to 3.5 micrometers. Being a viable means to increase the total efficiency of the efficiency of the transformation of the energy of the heating process, the change in the absorption properties of the workpiece, which is so profitable in reducing the production costs of the container, also has a detrimental effect on the appearance of a finished container. Reducing the optical propagation of the container, sometimes called the dash of the container, makes us recognize this general approach as a non-optimal solution to this production call.

U.S. Pat. No. 5,206,039 describes a one-step injection injection / blow molding system, which consists of improved means for creating appropriate conditions and transporting blanks from the injection stage to the blowing stage of the process mentioned. In this patent, the independent operation of the injection compression machine and the mas-bomb of blow molding, each adds a significant amount of energy to the process of creating the appropriate thermal conditions for the thermoplastic material, described as wasteful. This patent teaches that the use of a single-stage production process reduces both total energy consumption norms and production costs. This decrease in energy consumption comes primarily from the fact that most of the thermal energy required for the operation of blow molding, stored in the workpiece after the stage of injectionpressure. More specifically, in a one-step process, as described in the '039 patent, the preforms are not allowed to stabilize to room temperature after the injection injection process. Still, if the workpieces move directly from the stage of injecting to the section creating the appropriate thermal conditions, and then in the formation of blow molding.

The section for creating the appropriate thermal conditions described in patent 039 has the properties of being able to supply smaller amounts of thermal energy as well as subordinate the workpieces to controlled stabilization periods. This differs from the requirements of the section

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the creation of the appropriate thermal conditions in the 2-stage process of heating the blow molding machine, where large amounts of energy are required to heat the billet to the temperature of the sample. Although the operation of one-stage machinesprinting / blow molding is known in the level of technology, for these machines storedproblems of quality of the finished container. These quality problems are related to the temperature variation of the workpiece-to-work, since the flow of the workpiece is in the stage of blowing. In spite of the advantages described in the '039 patent, using the so-called IR technology of heating and the means and methods of measuring the temperature, the process of creating the appropriate thermal conditions for the preparation of the products soon after they were removed from the injection injection process still, to bring in changes in the thermal content of the preforms to the stage of blowing. Variations in the thermal content of the input of the billets lead to variables of the properties and the quality of the finished containers. The non-efficiency in the ability to customize the user's process of IR heating during the pre-procurement step leads to the fact that the manufacturer chooses to use the method of blow molding heating to achieve the required levels of quality. For this reason, for the most efficient applications, the industry's confidence as to how the heating is stored. In addition, due to the fact that the workpieces are often manufactured by a commercial converter and sold to the end-user who blows and fills the containers, the heating process continues to be popular. Variations in the thermal content of the input of the billets lead to variables of the properties and the quality of the finished containers. The non-efficiency in the ability to customize the user's process of IR heating during the pre-procurement step leads to the fact that the manufacturer chooses to use the method of blow molding heating to achieve the required levels of quality. For this reason, for the most efficient applications, the industry's confidence as to how the heating is stored. In addition, due to the fact that the workpieces are often manufactured by a commercial converter and sold to the end-user who blows and fills the containers, the heating process continues to be popular. Variations in the thermal content of the input of the billets lead to variables of the properties and the quality of the finished containers. The non-efficiency in the ability to customize the user's process of IR heating during the pre-procurement step leads to the fact that the manufacturer chooses to use the method of blow molding heating to achieve the required levels of quality. For this reason, for the most efficient applications, the industry's confidence as to how the heating is stored. In addition, due to the fact that the workpieces are often manufactured by a commercial converter and sold to the end-user who blows and fills the containers, the heating process continues to be popular. that the manufacturer chooses to use a blow molding method for heating to achieve the required levels of quality. For this reason, for the most efficient applications, the industry's confidence in the methods of heating is maintained. In addition, due to the fact that the workpieces are often manufactured by a commercial converter and sold to the end-user who blows and fills the containers, the heating process continues to be popular. that the manufacturer chooses to use a blow molding method for heating to achieve the required levels of quality. For this reason, for the most efficient applications, the industry's confidence in the methods of heating is maintained. In addition, due to the fact that the workpieces are often manufactured by a commercial converter and sold to the end-user who blows and fills the containers, the heating process continues to be popular.

The prospect of a general improvement in the efficiency and / or functionality of the IR section of the heating of blow molding machines depends on both the operating costs and the prospects for product quality. Although several attempts were made to improve the subsystem and heating the current state of the art, the apparent disadvantages are still preserved. The intention of the present invention is to overcome these shortcomings by introducing new concepts and methods of infrared heating.

In the electronics industry, solid-state, coherent, solid-state emitters or laser diodes are known in the art. Photonic or flux emitters of this type are known to be commercially available and work at different wavelengths from ultraviolet (UV) over infra-red. The i-EO5 is constructed from a corresponding N- and R-admixture of semiconductor material. The volume of the semiproduct material, correspondingly processed, to contain the region of the P-admixture, placed in a direct contact with the N-admixture region of the same material, gives the general name of the diode. Diodes have a lot of important electrical and photovoltaic properties, which is well known in the state of the art. For example, it is well known at the state of the art that in the physical boundary of the interface between the region N-admixture and the area of ​​the R-admixture of the formed semiconductor-diode, characteristic of the forbidden (energetic) zone exists in the material. This forbidden zone relates to the difference in the energy level of the electron located in the conduction band in the N-region relative to the energy level of the electro-

to in less accessible orbitals of the R-region. When the electrons are forced to flow through the PN-junction, the shifting of the energy level of the electron from the orbitals of the conductivity of the N-region to the lower orbitals of the P-region begins to occur, which leads to the emission of the photon for each such displacement of the electron. The exact energy level or, apparently, the wavelength of the emitted photon corresponds to a decrease in the energy of the electron carried.

In short, laser diodes operate as direct-current-to-photon emitters. Unlike threads, or other emitters of an absolutely black type, there is no requirement to pass the energy into the intermediate form of heat before it is possible to release the output photon. Because of this direction of current-to-photon handling, the laser diode has the property of being extremely fast-acting. Laser diodes have been used in numerical applications, which requires the generation of an extremely high frequency of repeating the pulse of UV, visible, and / or near-infrared light.

Unlike sources based on the thread, the laser diode emit a more relatively limited range of wavelength zones, corresponding to a specific perforated zone of the semiconductor material, which is trodden.

The subject of the invention involves the introduction of insignificant or substantial amounts of infrared radiation devices with high selectivity of wavelengths, which may facilitate the use of infrared radiation for the entire new classes of applications and methods that were not historically available.

A feature of this invention is to provide compression, or another process or system of work with a system of thermal infrared heating, which results in improved efficiency of the efficiency of re-transformation of infrared energy.

Another feature of this invention is to provide an infrared heating system having characteristics of the infiltration depth of the gun, tuned to the specific material that is being processed or for which prize-start.

Another feature of this invention is to provide a system of thermal infrared radiation that may include a projected PEU composition (such as laser gel) that will produce infrared radiation in such selected narrow zones of length of the wave that may be optimal for class applications.

Another feature of this invention is to provide an IR heating system capable of being operated in a pulsating mode; this pulsation mode is particularly suitable for ensuring infrared heating of parts manufactured in dis-crete, since they are transported during the production process, or to facilitate synchronous tracing of radiation targets.

Another feature of the present invention is to provide an infrared heating system that is precisely targeted or aimed precisely to where the thermal energy of radiation is best utilized.

Another feature of this invention is to provide an IR heating system capable of operating in a

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nany with a system for measuring the temperature of the workpiece, to ensure the procurement-specific ability of IR heating.

Another feature of the present invention is to provide infrared laser heating elements made as a direct current-to-photon I / O kits of solid-state laser emitters or laser radiation emitting diodes (REVIEZ).

Another advantage of this invention is to provide an infrared radiation system of substantially emitting power in selected, very special, single or multiple narrow zones of the wavelength.

Another advantage of this invention is the functional capabilities of producing a powerful, heat-intensive infrared radiation and can be programmed for at least one of the positions, intensity, wavelength, long-range radiation contact, norms included / off, direction, frequency ripple, and trace the product.

Another advantage of the invention is the promotion of a more efficient way of input energy in order to bring the energy of heat into the target component in comparison with modern broadband jellies.

Another advantage of the invention in heating the packaging of bottles is to maintain the ability to heateffectively, without requiring the addition of the targetcomponents, which reduce the visual quality andincrease the cost.

Another aspect of the present invention is to provide a general radiant heating system for a wide range of applications to which it may be adapted to provide improved functional capabilities for the long-term selectivity of infrared radiation in combination with programmability and the ability to operate in a pulsating state.

Another advantage of the invention is that it contributes to the fact that the heat of non-radiation is easily diverted far to another location of the location, where necessary, or may come from the use environment to make ambient or non-target heating.

Another advantage of the invention is the ability to produce infrared radiation with a selected wavelength and to be highly programmable for at least one of the fields of laser radiation, intensity, wavelength, scan sample, imprint scanning, norm on / off, direction, frequency pulsations and targeted tracing.

FIG. 1 is a cross-sectional view of a partition copper semiconductor device implemented in one embodiment of the present invention. FIG.

FIG. 2 is a cross-sectional view of a buffer layer of a typical semiconductor device implemented in one embodiment of the present invention. FIG.

3 is a cross-sectional view of a layer of a quantum dot of a typical semiconductor device implemented in one embodiment of an existing input.

4 is a cross-sectional view of the emitting radiation of a diode comprising a layer of quantum dots, carried out in one embodiment of an existing derivative.

5 is a cross-sectional view of the emitting radiation emitted by a diode comprising a quantum dot, carried out in one embodiment of the present invention.

6 is a cross-sectional view of the emitting radiation of a diode, comprising a layer of quantum dots, made in one embodiment of an existing derivative.

FIG. 7 is a cross-sectional view of a laser diode comprising a quantum dot layer implemented in one embodiment of the present invention. FIG.

FIG. 8 shows a graphical representation of a single PE semiconductor device. FIG.

Figures 9 and 10 show the relative percentage of infra red energy transmitted through the section of the RT thickness of 10 ml as a function of the wavelength.

11a, 11b, and 11c show a typical set of individual PEE emitters packed together in the HEU element of the heater.

12a and 12j show a better deployment of the HEU elements of the blend pre-dose.

13a and 13b show a further embodiment of the present invention, showing the implementation of the radiated laser diodes.

FIG. 14 shows a preferred method for heat treatment of blanks as described in this invention.

Figs. 15-17 show alternative methods for thermal treatment of thermoplastic blanks according to the present invention.

FIG. 18 shows the elements of the heater's REW, which are used with the advantages for the parts that are di-intentionally transported.

The subject of the invention is directly related to the latest and new approach, which will make it possible to directly deduce significant amounts of infrared laser radiation at round-wavelengths in order to replace such broadband sources of the heating source. Many types of lasers would be useful in order to practice this invention, in addition to gas and chemical lasers, due to the greater complexity of navigation and inaccessibility in many of the required wavelengths. Whether from their typical output wave or from the special adaptation to the shaped wavelengths, they can be quite expensive. While other lasers can satisfy the practice of the embodiments now described, solid-state lasers are more practical to integrate lock-in, in control and more economical. These devices for better implementation are the first of a new class of devices, which are only becoming available and more efficient quantum converters input power. They can also be made in a very wide range of selected wavelengths, which may be required for some materials or applications.

Recent advances in semiconductor technology have led to the possibility of using directly electron-to-

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photon of solid-state emitters operating in a general infrared range above 1 micrometer (1,000 nanometers). These solid-state laser diodes are based on devices that work similarly to the general emitting light diode (BEE), but they do not emit visible light, but emit precise thermal IR energy in the long medium-infrared wavelengths. In fact, there is a completely new class of semiconductor devices that use quantum dot technology, and overcome the barriers that prevent the use of easy-to-use, efficient, cost-effective and very powerful solid state devices that can function as converters directly to the photon electron and to produce a wavelength in a pseudo-monochromatic and se-red-infrared range. Expected that the further development of this category or other solid-state devices may be available in the future for the medium or long thermal-infrared wavelength range. They can be used to practice this invention as either primary sources of radiation, or in combination with other lasers.

To distinguish this new class of devices with ordinary, with shorter wavelengths of devices (BEUs), these devices are more appropriately described by radiation or emitting radiationDiodes (PEUz). Devices have the property of the emitting watts emitting the energy of the electromagnetic field in a very limited range of wavelength. In addition, due to proper operation of the semiconductor processing, the OPUE can be configured to generate specific wavelengths that are the most advantageous for the special application of the treatment radiation. Such OPUs, tuned from laser-diodes, can be referred to as B-REUz, laser diode emitting radiation.

Thus, innovations in BEE technology are potentially and further developing in connection with the formation of an activated planar region in contact with an optically activated region formed as a randomly distributed matrix of small areas of the material or quantum dots for the production of photons in the target 14 range This technique is manufactured, or other, such as the development of new semiconductor compounds, respectively, applied to solid-state laser diode emitters medium-infrared range for the subject of wine-thrust. Alternative semiconductor technologiescan also become available in both the infrared and infrared, and in the long infraredwavelength range that would be suitable standard blocks to practice thisinvention.

Directly the transformation of an electron (orelectric current) to a photon, as considered in the range of these embodiments, occurs within the narrow range of wavelength, often noted by a pseudo-monochromatic, compatible with the power-forbidden band and the geometry of the quantum dot of this manufactured diode emitter. It is apparent that the half-wavelengths of the laser band of possible diode emitters will fall anywhere within the range of 20-500 nanometers. Narrow

The width of this type of infra-red emitters should be to support the diversity of radiation-specific long-wave applications as identified within the context of this full disclosure. A single BIOS family of devices and technology to make them is the subject of a separate patent application, US Application No. 60 / 628,330, filed November 16, 2004, entitled "Semiconductor Quantum Point Device", in which Samar Sinhara (Watag Vipyagou) and Dave Wilt (Yuwaye SII) specified the inventors (Registry of Attorney NumberERI.RYY0002; Mark Express Mail No See EB726091609 er) (also filed on November 16 2005Zayavka SILA No. 11 / 280.509) yakoyivklyuchene use this link.

In accordance with this "Quad-Core Semiconductor Device" applications, semiconductor devices are known in the state of the art. They are involved in pho-galvanic elements, which convert the electromagnetic radiation into electricity. These devices can also be used as light-emitting diodes (BEEs) that convert electric energy into electromagnetic radiation (for example, light). For most of the semiconductor applications, the desired band gap (electron volts) or the desired length of the wave (microns) is determined, and the semiconductor is made in such a way as to fit this desired range zone of the bandgap or range of waves.

The ability to reach a specific wavelength or energy of electrons is not trivial. Indeed, the semiconductor is limited by the choice of special materials, their band gap, their own parameter of the crystal lattice, and the present emission of them. One technique that has been used to adapt the semiconductor device is to use dual or tertiarycompounds. By changing the compositional characteristicsdevice, were designed technologically usefuldevice.

The design of a semiconductor device can also be controlled to accommodate device reversal. In one example, quantum switches can be included in the semiconductor device. These points quantum limit the carrier frequency and thus change the emission energy of the photon in comparison with the dimensional sample of a similar semiconductor. For example, American Patent Number 6,507,042 teaches semiconductor devices that include the layer of a quantum dot. Specifically, he explains that the quantum dots of arse-nidu indium (IpAz) deposited on a layer of arsenideindia gallium (IppSa^l. hAz) This patent discloses that the emission of photon wavelengths associated with quantum dots can be controlled by the path control of the number of lattice mismatches between quantum dots (ipAz) and the layer at which points are deposited (ipxSa^l. hAz) This patent also reveals the fact that the discrepancy between the lattices between the substrate YphSa-b_hAz and the quantum IpAz points can be controlled by varying the level of action within the framework of the IphSa-| substrate. hah! Since the quantity of india within the substrate of IphSa-I_hAz is increased, the degree of discrepancy is reduced, and the length

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the wave associated with the emission of the photon is increased (that is, the restricted zone is reduced). Indeed, this disclosure discloses that an increase in the amount of indium within the substrate from about 10% to about 20% may increase the wavelength of the coupled photon from about 1.1 pounds to about 1.3 psi.

While the technology disclosed in the American Patent No. 6,507,042 may be useful in providing devices that can simulate or absorb photons having up to about 1,300 waves of wavelength, the ability to increase the amount of indium within the substrate of the & lt; RTI ID = 0.0 & gt; and & lt; / RTI & gt; In other words, since the level of the individual greater than 20%, 30%, or even 40%, the sto-foam of defects or defects within the crystalline structure becomes limited. This is especially true when the lining ipchSa-I-hLe is deposited on a sub-daca or a plate of gallium arsenide (SalE). Accordingly, devices that emit or absorb photons of longer wavelengths (a lower band gap) can not be achieved by using the technology disclosed in American Patent No. 6,507,042.

Accordingly, since it would be desirable to have semiconductor devices emitting or absorbing photons of wavelength longer than 1.3, the need for a semiconductor device of such nature remains.

In general, the ECU provides a semiconductor device comprising a layer of ipxSa-i-xLe, where x is a molar fraction of from about 0.64 to about 0.72 percent by weight of indium, and quantum dots arranged on the specified ipxCa -] - xL5 layer, where quantum dots include ipLe or ΑΙ2Ιη -]. ζΑ5, where ζ is the molar fraction of less than about 5 percent vagaluminum.

The present invention also includes a semiconductor device comprising a quantum dot including ipAe or Ai2ip-1 _ζΑε, where ζ is a molar fraction of less than about 5 percent vagaluminum, and a shell layer that contacts at least a portion of the quantum dot , where the period of the crystal lattice of a quantum dot and the specified shell layer do not coincide at least 1.8% and less than 2.4%.

The semiconductor devices include a quartz point of indium arylene (ipAe) or indium aluminum arsenide (ΑΙζΙη- | .ζΑ5, where ζ is equal to or less than 0.05), quantum dots on indium gallium lauric acid (ipxAa)^L. _xΑ5) that can be referred to as the matrix shell ipxSa-1 _xΑ5. The period of the crystal lattice of points and the matrix layer ShpixCa-1. xΑ5 are inappropriate. The discrepancy of the grid may be at least 1.8%, in other embodiments, at least 1.9%, in other embodiments at least 2.0%, and in other embodiments at least 2. 05%. It is best if the discrepancy can be less than 3.2, in other embodiments, less than 3.0%, in other embodiments, less than 2.5%, and in other embodiments, less than 2.2%. In one or more embodiments, the period of the crystal lattice of the matrix shell ipxSa-i _xΑ5 is smaller than the period of the crystal-lattice dot grid.

In those embodiments, where the points are located on the matrix shell iphSa-] _xΑ5, the molar concentration

The indium (i.e., x) within this layer of the matrix shell may be from about 0.55 to about 0.80, possibly from about 0.65 to about 0.75, possibly from about 0.66 to about 0.72, and possibly from about 0.67 to about 0.70 .

In one or more embodiments, the matrix shell and ηxCa -), _xΑ5 is located on the arsenic-noid layer of the phosphorus indium (^ - ^ νΑΞγ), which is a lattice, pi-detached to the matrix shell ipxCa-i _xΑ5. In water or more embodiments, a layer of yp-ts yA5u, on which the deposited shell iphSa-i _xΑ5, is one or a set of graded (continuously or discrete) layers of IpR^L.. uA5u, which exist between the shell of ipxSa-] xΑ5 and the substrate that supports on-semiconductor. In one or more embodiments, the substructure includes an indium phosphide plate (Ipp). The semiconductor may also include one or more other layers, such as the layers of the & lt; RTI ID = 0.0 & gt; ixCa-i & lt; / RTI & gt; xea, between the & lt; / RTI & gt;

One embodiment is shown in FIG. 1, as well as other shapes, are schematic representations and are not plotted on a scale to the thickness of each layer or component, or to the relative thickness or diameter between each layer in comparison.

Device 1000 includes a substrate 1020, an additional conductivity layer 1025, a buffer structure 1030, a shell layer 1040, and a layer 1050. As far as technically qualified technicians are concerned, some semiconductor devices operate by converting electric current into electromagnetic radiation or electromagnetic radiation to electric current. The ability to control electromagnetic radiation or electrochemical current in these devices is known in the level of technology. This disclosure does not necessarily change these remarkable designs, many of which are known in the level engineering of production or design semiconductor devices.

In one embodiment, the substrate 1020 includes the phosphide of indium (Ipr). The thickness of the Ipr substrate 1020 may be more than 250 microns, in other embodiments, more than 300 microns, and in other embodiments, more than 350 microns. It is better if the thickness can be less than 700 microns, in other embodiments, less than 600 microns, and in other embodiments, less than 500 microns.

In one or more embodiments, the predicted semiconductor devices may comprise an epithelial layer of indium phosphide (IPR). The thickness of this epitaxial layer of indium phosphide can be from about 10 nanometers to about 1 microne.

In one embodiment, an additional conductivity layer 1025 includes gallium indium arsenide (ipxSa-UchAe). The molar concentration of indium (i.e., x) in this layer can be from about 0.51 to about 0.55, possibly from about 0.52 to about 0.54, and possibly from about 0.53 to about 0.535. In one or more embodiments, the layer of conductivity 1025 is a lattice selected to the substrate IpP.

The conductance layer 1025 may be added to a given value and a corresponding thickness to provide

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to cook enough electrical conductivity for thisdevice. In one or more embodiments, the thickness may range from about 0.05 microns to about 2 microns, possibly from about 0.1 micron to about 1 micron.

In one or more embodiments, the buffer layer 1030 comprises an arsenide of phosphorus indium (IpFuAzu). In certain embodiments, the buffer layer 1030 includes at least two, maybe at least, at least four, and possibly at least five layers Ip-] .with increasing the period of the crystalline lattice of each layer, since the layers are placed further from the substrate 1020. For example As shown in FIG. 2, the buffer structure 1030 includes a first buffer layer 1032, a second buffer layer 1034, and a third buffer layer 1036. The bottom surface of the layer 1031 of the buffer structure 1030 is adjacent to the substrate 1020 and the upper surface 1039 of the buffer structure 1030 is adjacent to the barrier layer 1040. The period of the crystalline reticle of the second layer 1034 is greater than the first layer1032, while the period of the crystalline lattice of the third layer1036 is greater than another layer 1034.

As qualified at the level of technology will appreciate, the period of the crystal lattice of individual layers of the buffer structure 1030 may be increased by changing the composition of successive layers. In water or more embodiments, the concentration of mice-ku in the buffer layers of IpR-cuAz is increased in the skin in the successive layer. For example, the first Buffer layer 1032 may include from about 10.0 to about 0.18 molar arsenic fractions (i.e., y), the second buffer layer 1034 may be included from about 0.22 to about 0.34 molar fractions of arsenic, and the third buffer layer 1036 may comprise from about 0.34 to about 0.40 mole fractions of arsenic.

In one or more embodiments, an increase in the number of juice between adjacent buffer layers (for example, between layer 1032 and layer 1034) is less than 0.17 molar fractions. It is expected that any effects are formed between successive buffer layers, which can be the result of the change in the period of the crystal lattice, resulting from the increase in arsenic content, will not be harmful to the semiconductor. Methods for using the critical attestation of the composition in this manner are known from the description of the American Patent No. 6,482,672, incorporated herein by reference.

In one or more embodiments, the thickness of the first buffer layer 1032 may be from about 0.3 to about 1 micron. In one or more embodiments, the upper buffer layer is generally thicker to guarantee a complete relaxation of the lattice structure.

In one or more embodiments, an individual buffer layer in or near the upper 1039 buffer structure 1030 (eg, buffer layer 1036) is designed to have a crystalline lattice period of from about 5.869 A to about 5.960 A, possibly from about 5.870 A and up to 5.932 A.

In one or more embodiments, an individual buffer layer in or near the lower 1031 buffer structure 1030 (e.g., a buffer layer

1032) is mainly designed within the boundary of the critical technique, grading the composition. Otherwise, since the first buffer layer (for example, buffer layer 1032) is deposited on the IpR plane, the amount of arsenic present in the firstbuilding layer (for example, layer 1032) is less than 17 mole fractions.

The shell layer 1040 includes IphSa^L. _hAz. In one or more embodiments, this layer is an important grate chosen for the period of the crystalline lattice in the plane of the upper buffer layer at the top of the 1039 buffer structure of 1030. The pitched component of the lattice refers to the inferred layers, which are characterized by the period of the crystal -large lattice, which is within 500 parts per million (that is, 0.005%) of each other.

In one or more embodiments, the shell layer 1040 may have a thickness of from about 10 Angstroms to about 5 microns, possibly from about 50 nanometers to about 1 microne, and possibly from about 100 nanometers to about 0.5 microns.

In one or more embodiments, the layer of the quantum dot 1050 includes indium arsenide (IpaA). The ball 1050 preferably includes a softening layer 1051 such that the tapping points 1052. The thickness of the wetting layer 1051 may be one or two mono layers. In the aqueous embodiment, the thickness of the points 1052 measured from the base 1053 of the layer 1050 and the peak of the 1055 may be from about 10 nanometers to about 200 nanometers, possibly from about 20 nanometers to about 100 nanometers, and possibly from about 30 nanometers to about 150 nanometers. In addition, in one embodiment, the average diameter of the points 1052 may be more than 10 nm, possibly more than 40 nanometers, but instantly greater than 70 nanometers.

In one or more embodiments, the quantum layer 1050 includes multiple layers of points. For example, as shown in FIG. 3, the quantum dot 1050 may include a first dotted layer 1052, a second pointing layer 1054, a third point layer 1056, and a fourth point ball 1058. Each layer includes an ipAz Indium arsenide and includes wetting layers 1053, 1055, 1057, and 1059, respectively. Each point-layer, likewise, includes points 1055. The characteristics of each point layer, including the torque layer and the points, are substantially similar, although they do not need to be identical.

Intermediate shells 1062, 1064, 1066, and 1068, respectively, are located between each of the point layers 1052, 1054,1056, and 1058. These fiber-reinforced layers include IphSa-YaAz. In water or more embodiments, IphSa-UhAz intermediate shell layers are substantially similar or identical to the coil layer 1040. In other words, the intermediate coil layers are preferably a lattice, picked upto the barrier layer 1040, which is preferably a lattice-coil, selected to the top of the buffer layer 1036 In water or more embodiments, the thickness of the interlayer layers 1062, 1064, 1066, and 1068 can range from about nanometers to about 50 nanomaterials, possibly from about 5 nanometers to about 30 nanometers, and possibly from about 10 nanometers to about 20 nanometers.

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As noted above, different layers surrounding the quantum dot layer can be positively ornegatively added to control the flow path. Techniques for controlling the flow through semiconductor devices are the levels of technology as described, for example, in the US Patent. Nos. 6,573,527, 6,482,672, and 6,507,042, which are incorporated herein by reference. For example, in one ormore embodiments, the area or layers maybe doped with "p-type" using zinc, carbon, cadmium, beryllium, or magnesium. On the other hand, areas or layers can be doped with "n-type", using silicon, sulfur, tellurium, selenium, germanium, or tin.

It is assumed that the semiconductor devices can be manufactured using known art techniques. For example, in one or more embodiments, the various semiconductor layers may be made using a metal-organic epipaxy of the vapor phase (OMURE). In one or more embodiments, the point-layer is made using a self-forming technique, such as the Stranky-Krastanov method (method 3-K). This technique is described in U.S. Pat. No. 6,507,042, incorporated herein by reference.

One embodiment of the emitting radiation of a diode (PEU) comprising a quantum dot layer is shown in FIG. 4. FIG. PE 1100, including the base contact 1105, the infrared reflector 1110, the semi-insulating semiconductor substrate 1115, the η-type side-conductivity layer 1120, the n-type buffer layer 1125, the shell layer 1130, the quantum dot-layer 1135, the shell layer 1140, p-type layer 1145, p-type layer 1150, and emitter contact 1155. Base contact 1105, infrared reflector 1110, semi-insulating semiconductor substrate 1115, p-type layer of the side conductor (I_SY_) 1120, p- type buffer layer 1125, shell layer 1130, quantum dot layer 1135, and shell layer 1140 are analogues described above semiconductor layers.

Base contact 1105 may include many very conductive materials. Exemplary materials include gold, gold-zinc alloys (especially when adjacent to the p-regions), gold-germanium alloy, or gold-nickel alloys, or gold-chrome (especially when adjacent to p-regions). The thickness of the base contact 1105 can be from about 0.5 to about 2.0 microns. A thin layer of titanium or chromium can be used to increase the adhesion between gold and active material.

Infrared reflector 1110 includes reflexive material and possibly dielectric material. For example, silicon oxide can be used as a dielectric material, and gold can be deposited on it as an infra-red reflective material. The thickness of the reflector 1110 can be formed from about 0.5 to about 2 microns.

Lining 1115 includes IpR. The substrate thickness 1115 can range from about 300 to about 600 microns.

The side-layer of conductivity 1120 includes IpxSa-b_hAe, which is a selected grid (i.e., within 500 rts) to the substrate Ipr 1115. In addition, in one or more embodiments, the layer 1120 is a n-admixture. The finite admixture is silicon, and the finer degree of con The concentration of the admixture may be from about 1 to about 3EI / sec³.

The thickness of the lateral layer of conductivity 1120 may be from about 0.5 to about 2.0 microns.

The buffer layer 1125 includes three graduated layers of IpR-] _uAZ compatible with the method described above. The ball 1125 is preferably n-admixing. The best powder is silicon, and the mixing density of the semiconductor can be from about 0.1 to about 3E9 / st³.

The sheath layer 1130 includes IphSa-I .hEe, a lattice selected to a crystalline lattice-plane (that is, within 500rtr) to the top of the buffer layer 1125 (that is, the third degree or sub-layer). In one or more embodiments, IphSa-IxAe sheath layer 1130 includes from about 0.60 to about 0.70 percent of the mole fraction fraction. The thickness of the shell layer 1130 is from about 0.1 to about 2 microns.

The quantum dot layer 1135 includes the points of IpAe as described above with respect to the teachings of this invention. As with the previous embodiments, the prompting layers between each point layer include IPhSa-I .hAe shell, similar to the shell layer 1130 (ie, a picked grid). In one or more embodiments, the amount of indium in one or more successive intermediate layers of the shell may include less than the indium than the shell layer 1130, or the preceding or low intermediate layer.

The sheath layer 1140 includes the IphSa-I _hLe, which is a selected grid (that is, within 500rrt) to the top of the buffer layer 1125 (that is, the third sto-foam or sublayer of it).

The restriction layer 1145 includes IpR-tsuAeu, which is a grid selected for the IpphAs-I -_xAz layer 1140. In addition, in one or more embodiments, layer 1145 is p-admixture. The best admixture is zinc, and the concentration of the admixture may be from about 0.1 to about 4Ei9 / s³. The thickness of the luminaire limit 1145 may be from about 20 nanometers to about 200 nanometers.

The contact layer 1150 includes the IphSa-I _hLe, which is a lattice selected to the restriction layer1145. The contact layer 1150 is preferably p-admixture (for example, admixture with zinc.) The concentration of the mixing of the semiconductor may be from about 1 to about 4E19 / st³. The thickness of the contact layer 1150 is from about 0.5 to about 2 microns. The contact layer 1150 may be removed from the entire surface except under the layer 1155.

Emitter pin 1155 may include any very conductive material. In one or more embodiments, the conductive material includes a zolot / zinc alloy.

Another embodiment is shown in FIG. The semiconductor device 1200 is formed as an emitting radiation diode with a tunnel transition in the range of the region. This design involves re-weighing lower resistance contacts and more low-

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cei distribution of current resistance. Many aspects of the semiconductor 1200 are analogous to the semiconductor 1100 shown in FIG. 4, for example, the contact 1205, which is similar to the contact 1105, the reflector 1210 is similar to the reflector 1110, the substrate 1215 may resemble the substrate 1115, the lateral dimension of the spacing 1220 may resemble a conduction layer 1120, the buffer layer 1225 may resemble a buffer layer 1125, the shell layer 1230 maybebetween a shell layer 1130, the point layer 1235 may be referred to a point layer 1135, the globular layer 1240 may resemble a shell layer 1140 , and the restriction layer 1245 may be limited to a layer 1145

The tunnel layer of the junction 1247 includes IPhSi-hAe, which is a grid picked up to the restriction layer1245. The thickness of the tunnel layer of the junction 1247 - from about 20 to about 50 nanometers. The tubular layer of the joint 1247 is preferably p-admixed (for example, with zinc), and the concentration of the mixing of the semiconductor may be from about 1 to about 4 E? 9 /³. The tunnel layer of the junction 1250 includes the IPhSa-Uh, which is a grid picked upto the tunnel connection 1247. The thickness of the tunnel layer of the junction 1250 is from about 20 to about 5,000 nanometers. The tunnel layer of the 1250 joint is ne-guarded η-admixture (for example, silicon), and the concentration of the mixing of the semiconductor - from about 1 to about 4EI9 / st³.

The emitter 1255 contact may include a variety of conductive materials, but preferably includes those materials that are best for η-regions, such as gold-chromium, gold-germanium, orzoloto-nickel alloys.

Another embodiment of RET is shown in Fig. 6. The semiconductor device 1300 is formed as a diode emitting radiation in a similar manner to the RET shown in FIG. 5, except that electromagnetic radiation can be emitted through the substrate of a semiconductor device due to at least a partial absence of the main reflector (for example, the absence of a reflector , type 1210 is shown in FIG. 5). In addition, the semiconductor device 1300 shown in FIG. 6 includes an emitter terminal / infrared reflector 1355 that is a "full-contact" covering of the entire surface (or a larger part of the entire surface) of the device.

In all other respects, device 1300 is similar to device 1200. For example, the contact 1305 may resemble contact 1205, the substrate 1315 may come to the substrate 1215, the side layer 1320 of the conductor may resemble a conductivity layer 1220, the buffer layer 1325 may to resemble a buffer layer 1225, the shell layer 1330 may be a shell layer 1230, the point ball layer 1335 may be similar to the point layer 1235, the shell layer 1340 may resemble a shell layer 1240, and the restriction layer 1345 may be the weaver restriction 1245, the tunnel layer of the joint 1347 is similar to the tunnel the layer of the junction 1247, the tunnel The jumper ball 1350 looks like a tunnel 1250.

It is assumed that semiconductor technology can also be used in manufacturing

Multiple Laser Diodes. A typical laser is shown in FIG. 7. The laser 1600 includes a contact 1605 to include any conductive material, such as gold-chrome alloys. The thickness of the contact layer 1605 is from about 0.5 microns to about 2.0 microns.

The lining 1610 includes indium phosphide, which is predominantly η-impurity, in a concentration of from about 5 to about E18 /³. The substrate thickness 1610 is from about 250 to about 600 microns.

The additional epitaxial layer of indium phosphide 1615 is preferably η-admixture, at a concentration from about 0.24 E19 / st³ to about 1E19 / t³. The thickness of the epitaxial layer 615 is about 10 nanometers to about 500 nanometers.

The lattice-shaped ηηρ-cellular layer 1620 is derived from a lithospheric buffer ΙηΡ-i.uAu, shown in FIG. 2. The buffer 1620 is preferably η-admixture, in a concentration of from about 1 to about 9 e18 /³.

The ball 1625 and 1630 forms a waveguide 1627. The ball 1625 includes gallium indium arsenide phosphide (Ιηί_χ <3ΑχΑ52Ρ- | _ζ). The ball 1630 similarly includes the η- | χ <3ΑχΑ5ζΡί-ζ. Both layers 1625 and 1630 are molded rugs matched to the top of the layer 1620. Otherwise, the layers 1625 and 1630 include from about 0 to about 0.3 molar fractions of gallium from 0 to about 0.8 mole fractions of arsenic. Shaker 1625 is a thickness of about 0.5 to about 2 microns and is η-admixture, at a concentration of approximately 1-9 is 18 / s³. The ball of 1630 is from about 500 to about 1, 500 nanometers, and - η-admixture, at a concentration of about 0.5 to 18 μm³.

Layer limit 1635, dotted layer 1640, timer constraint 1645 are similar to the precision layer and the restriction layer described above with respect to other embodiments. For example, the limitation layer 1635 goes to the restriction layer 1040, and the point layer 1640 refers to the point layer 1050, shown in Fig.3. In one or more embodiments, the number of point layers used in the point region of the laser device is over 5 point layers, possibly over 7 point layers, and possibly more than 9 point layers (for example, cycles). Layers in limits 1635 and 1645 may have a thickness of from about 125 to about 500 nanometers and are re-nets picked up to the waveguide. Layers 1635, 1640, and 1645 are generally not impurities (that is, they are inherent).

Layers 1650 and 1655 form a wave guide 1653. In a similar way, the layers 1625 and 1630, layers 1650 and 1655 include I-n-α-χΟΑχΑ5ζΡί-ζ, which is a grid picked up to the top of the buffer 1620. The balloon 1650 is from about 500 to about 1, 500 nanometers, admixture in a concentration from about 0.5 to about 1 Ei8 / st³. The layer 655 is a thickness from about 1 to about 2 microns and is p-admixture, at a concentration of about 1 to about-9 Ei8 / st³.

In one embodiment, the layer 1660 is a buffer layer that resembles a buffer layer of 1620. Thus, the molar fraction of arsenic reductions with each stage is further away from quantum dots. The ball 1660 is predominantly p-admixture, at a concentration of 1-9 Ei8 / st³.

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The ball 1665 includes phosphide india (IpR). The lacquer 1665 is from about 200 to about 500 nm in thickness and is preferably p-admixed, at a concentration from about 1 to about 4Ei9 / st³.

Ball 1670 - layer of contact, similar to other layers of the contact, described in previous incarnations.

In other embodiments, layers 1660, 1665, and 1670 may resemble other configurations described in relation to other embodiments. For example, these layers may resemble layers 1145, 1150, and 1155 shown in Fig. 4. Alternatively, similar layers 1245, 1247, 1250, and 1255 shown in FIG. 5 may be replaced by layers 1660,1665 and 1670.

Various modifications and changes that will not depart from the opportunities and general trends of the embodiments of this device will become apparent to those who are skilled in the level of technology.

Of course, it should be appreciated that, in one form, the invention includes the elements of the CEU, as described. However, it should be understood that various other tech nologies of the device can be used in the same way. For example, EIR-based laser-diode diodes can be used in many ways, examples of which will be described in connection with Illustration 13. In addition, various semiconductor lasers and other laser diodes can be used with suitable modifications. Of course, other possible technologies may be developed for efficiently producing radiation of a limited bandwidth in a favorable long-wave wavelength.

In order to practice the invention for a particular application, it is usually required to deploy a plurality of devices in order to produce sufficiently significant heat of radiation energy in order to have adequate amplitude of radiation. Again, in one form, these devices will be based on laser-based diodes (which are also nasi are called B-Ray). In most thermal applications of the invention, such devices will typically be dispersed in a kind of high-density matrix of henna in or in a plurality of matrices x to y, some of which may take the form of a customized placement of separate EEE devices (again, in the same form, I_REUye ) The matrices can be ranked from one-to-one devices to, more typically, hundreds, thousands, or unlimited quantities of device matrices, depending on the types and sizes of devices that are utilized, the required power and wavelength, necessary for the specific use of the invention. EE devices are usually installed on circuit boards that at least have the ability to decompose heat, if there are no special devices for removing heat. Often, the devices are installed on such boards in very high densities / located in close proximity. Perhaps to take advantage of the recent innovations in the installation of the matrix and the construction of the motherboard, in order to maximize the density of which is desirable for powerful applications. For example, such means as the use of inverted crystals, are preferable for such purposes. Although the efficiency of the REU devices is good for this unique class if there are no special devices for the removal of heat. Often, the devices are installed on the following circuit boards in very high densities / placement in immediate proximity. Perhaps to take advantage of the recent innovations in the installation of the matrix and the construction of the motherboard, in order to maximize the density of which is desirable for powerful applications. For example, such means as the use of inverted crystals, are preferable for such purposes. Although the efficiency of the REU devices is good for this unique class if there are no special devices for the removal of heat. Often, the devices are installed on the following circuit boards in very high densities / placement in immediate proximity. Perhaps to take advantage of the recent innovations in the installation of the matrix and the construction of the motherboard, in order to maximize the density of which is desirable for powerful applications. For example, such means as the use of inverted crystals, are preferable for such purposes. Although the efficiency of the REU devices is good for this unique class as the use of inverted crystals is preferable for such purposes. Although the efficiency of the REU devices is good for this unique class as the use of inverted crystals is preferable for such purposes. Although the efficiency of the REU devices is good for this unique class

diode device, most of the input electricenergy is directly converted to a localizedheat. This unnecessary heat should be taken away from the semiconductor connection to prevent overheating and combustion of individual devices. For matrices of the highest density, it is possible to use the technology of inverted crystal and crystal-on-board packaging with active-and / or passive cooling. Multiple board boards will often be used for flexibility and practicality. Matrix x on y can also include an assortment of EEU devices representing at least two different selected wavelengths of infrared radiation in the range from, for example, 1 micrometer to 5 micrometers.

For most applications, the EEUs of the device are useful in deploying in different dimensional matrices, some of which may be three-dimensional or non-planar essentially for better irradiation of certain types of purposes. This is true for at least the following reasons:

1. Provide sufficient output power by combining the power of multiple devices.

2. Ensure sufficient 'power distribution' over a larger surface than a single device to properly irradiate.

3. Provide the functionality that the programmability of the matrix of the EEU devices can transfer to application.

4. Let's mix the devices matrixes that are configured to different specified wavelengths for many of the functional reasons described in this document.

5. To facilitate the correspondence of 'geometry' on the way to a specific application requirement.

6. Facilitate compliance with devices, location of installation, radiation angles and economics of application requirements.

7. Simplify the synchronization of the moving target power or for another Output Fault '.

8. Adapt the groups of actuated devices to the general electrical control circuit.

9. Adapt multistage methods of heating.

Because of the typical end uses of diodes, they were made in a way that minimizes costs, reducing the size of the joint. Because of this, the smaller area of ​​the semiconductor plate is required to directly affect the costs. The final use of the EEU devices often requires significantpower of radiation energy in the form of a greater number of photons. It was theoretically foreseen that IEE could be constructed with creative ways to form a large junction plane that produces photons. By doing so, it would be possible to make an EEI device capable of supporting significantly higher average infrared radiation power. If such devices are available, then the absolute amount of EEU devices required for practice in the present invention may be reduced. This would not necessarily be desirable or practical, however, given the high output power,

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associated with many applications of this guideline, the number of devices is reduced to a single device. The invention can be practiced with a single device for low-energy applications, applications of a single wavelength, or if the RAU devices can be manufactured with sufficient output.

In the same way, it is possible to make an EEU matrix device as an integrated circuit. In this case, the REUS would be lined up within the boundary of a single piece of silicon, Arsenide Gaul, PhosphideIndia, or another suitable substrate, but with multi-ducts or enlarged areas of the forbidden zone, which function as places for the production of photons on a chip. They can be similar to other packages of the integrated circuit, which use the ball grid matrix for electrical connectivity. Such device packs could then be used as a matrix, facilitating the desired electrical contact capability for connection and control of the control system. Again, an important parameter of the design is the control of the temperature test or the forbidden zone, which can not be allowed to reach about 100 ° to 105 ° С, with current chemistry before the damage begins to occur. For better efficiency, it is desirable to hold the area of ​​the forbidden zone as cool as possible, less than 30 degrees C, so that the maximum electric current could wind up and transform into radiation photons. Thus, the design in order to install each of the CEU matrix to the mounting board, it is necessary to consider the importance of removing the heat from the device so efficiently as possible. For example, heat can be obtained by the conductivity of the contact columns that are intended for conduction to the cathode anode according to the device. The mounting plate on which the installed devices should be provided for good thermal conductivity also in such a way that the heat could be attributed to devices that, for many applications, will use heat or shirt cooling system, what is necessary to hold in a cool state of the motherboard. It is expected that future chemical compounds may increase the flow of heat, but the heat should always be kept below the critical range of damage to the device being used. They could further be deployed on or from the circuit boards individually or in a multi-tier, or they could line up as the matrix of the highest level of devices as dictated by application and economy.

When designing a better configuration forto deploy the device into a matrix radiation, regardless of the form factor of the device, the designer should consider the whole range of variables. Some of the variables that will be dealt with in the target application include packaging, ease of deployment, costs, e-communicativeness, programming management, occupation, energy routing, power supply, voltage sequence, sequencing geometry, radiation requirements, safety and ba

Gato other, will understand many qualified technicians.

All raw materials used to make products are related to its specific characteristics of absorption and transmission in various wavelengths in the electromagnetic spectrum. The collar material also has the characteristic properties of infrared reflection and emission, but we do not have to spend time discussing them, because the use of this invention is more related to absorption / transmission powers. Percentage absorption at any given wavelength can be measured and schematically presented for any material. This can then be represented graphically in a wide range of lengthwise waves, which will be explained and discussed in detail in the examples later in this document. Since each type of material has a characteristic pog lineage or transmission properties on different wavelengths, for better thermal optimization of the process, it is very important to know these propertiesmaterial. It must be realized that if a certain material is very transmissive in a certain wavelength range, it would be very ineffective to try to heat this material in the same diagonal of the wavelength. On the contrary, if the material is very absorbent than at a certain wavelength, then the use of radiant heating leads to surface heating of the material. For materials that are inefficient heat conductors, this is usually not the best way to heat up the material. then the use of radiant heating leads to surface heating of the material. For materials that are inefficient heat conductors, this is usually not the best way to heat up the material. then the use of radiant heating leads to surface heating of the material. For materials that are inefficient heat conductors, this is usually not the best way to heat up the material.

The fact that various materials have special characteristics of absorption or transmission in various wavelengths, was known in the level of technology multi-year. However, since large-power infrared sources that could be used for successive wavelengths or wavelength combinations were not available, historically it was not possible to fully optimize many of the existing heat or processing operations. Since the practice has not been to deliver specific wavelengths of infrared radiation to the product, many manufacturers are not aware of the wavelengths in which their specific product is the most prepared to be heated or processed.

This is illustrated by the example of the industry plaster. With respect to Figures 9 and 10, by following the curve of transferring Terephthalate to polyethylene (the material of the PET resin as it is known in the industry), from which plastic containers are produced by compressed impact of blowing, it can be observed that

The RET material is very absorbing than in the long-range wavelength and very transmissive visible and near-infrared wavelength regions. Its transmission varies considerably between 1 micrometer and 5 micrometers. Its transmission not only varies significantly in this range, butchanges frequently and sharply and often very substantially, sometimes within 0.1 micrometers.

For example, the RT at 2.9 micrometers has a cordial absorption. This means that if infra-red radiation were brought to the PET

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At 2.9 micrometers, it would be almost all pog-lined in the surface, or the outer shell of the material. If it was desirable to heat only the external surface of the material, then this wavelength can be used. Since PET is a very poor heat conductor (it has a low thermal conductivity coefficient), and because it is more desirable in the operations of blow molding of the stretching, to heat the RET material deep from the inside and completely equal in its volume, in practice, it is a bad wavelength to heat the RT with a decent chip.

Considering another condition, at 1.0 micrometers (1000 nanometers), the materials of RET are very transferable. This means that a high percentage of radiation at this wavelength that is caught up with the surface of the PET will be transmitted through the PET and without causing any desired heating, so it will be largely spent in vain. It is important to note that the transfer of electromagnetic energy is reduced by the exponential as a function of thickness for all dielectric materials, so the thickness of the material is significant in the choice of optimal wavelength for this material.

It should be understood that although the PET thermoplastic material was used here as an example, the principles are preserved for a very wide range of different types of materials used in various industries and for different types of processes. For example, REICH or RI_L materials to which these principles can apply. As an example, glue or adhesive la-minaret system is illustrated. In this example, the assumption that the material of the derived element, which is bucted, is very transmissive in the selected infra-red wavelength. The heat-hardening glue, which should be used, should be very absorbent than at that same wavelength. Irradiating the "sandwich" glue / laminate in this particular advantageous wavelength, the process is further optimized due to the fact that the glass, not the adjacent derivative material, is hot.

Historically, the ability to produce relatively high-density infrared radiation in specific wavelengths was simply not enough for the industry. Therefore, since this heating or processing typoptimisation was not available, this was not considered by most manufacturers. It is expected that the availability of such an infra redenergy of specific wavelength radiation will open up entirely new ways and processes. The invention of the invention will make such new processes practical and provide a technology of implementation that achieves a wide range of applications. At the same time, it is expected that the first uses of the invention will be in the industry, and it is recognized that there will be many applications in the commercial, medical, consumer and other areas of the skin.

It is expected that the invention will be very useful as an alternative to broadband quartz flasks

infrared heating, or any other conventional heating device that is currently in a widespread use. Such quartz flasks are used for a range of applications, including the heating of sheets of plastic material in preparation for a thermoforming operation. The object of the invention can be used not only as an alternative to the existing functional capabilities of quartz infrared lamps or other conventional heating devices, but provides for the possibility of adding significant additional functionality.

The difference in the present invention is that it can either produce the radiation energy in a continuously or, alternatively, pulsed mode. Since the main EEUs of the invention product have an extremely fast reference time, which is measured in microseconds, greater energy efficiency is possible to enable energy when needed or when the target component is within the target area and then to exclude it when the component no longer exists in the target area.

Additional functionality of the infra-red source of operation in pulsation mode can lead to a significant improvement of the fullenergy efficiency of many radiating heat-applications. For example, according to the time of inclusion of either a single or matrix-emitting infrared radiation device (IEE), individual targets can be tracked, since they move past a large, non-fractional matrix source. In other words, only those infrared emitting devices that are closest to the target will be included. Since this -sized component or region is moved forward, the "wave of inclusion" can be transmitted further along the matrix.

In the case of heating the material that will be molded, it is desirable to apply moreincreased heat in those areas that will be moreformed in comparison with areas that are scrambled or not formed at all. This is probably the correct construction of the configuration of matrices of infrared emitters, so that not only not have the simultaneous inclusion of all device-eating, but able to include them very strategically to fit the shape of the area that will be on-the-air. For lines of continuous motion of products, for example, it would be most desirable to program a specially formed area of ​​the desired thermal profile, which can be programmatically translated into synchronous motion from the target area that will be heated. Considering frame images, formed by the area that requiresheating, as shown in Figure 18. In this case, it would be possible to have a similar scene frame formed by the matrix of devices (402) at the desired emitting intensity to be programmed moving down the matrix, synchronized with the movement of the target thermoformed sheet (401). When using the position sensor, tracking motion of a product such as a thermofiltration sheet (401), well-known methods of synchronization of electronics can be used,

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to include the appropriate devices in the desired intensity according to the programming controller or the computer instructions. Devices in the matrix matrix can be included in the control system at their desired output intensity either in the "continuous" mode or in the "pulsation" mode. Both modes can modulate the intensity as a function of the time to the desired desired output condition. This control can belong to a device group Eaten either to separate EEU devices. For a specific application, which may or may not be required, granular control of individual EEU devices is required. In these cases, EEU devices can be mounted in sequence of the most desired geometry. Then these sequences or groups of sequences can be controlled by programmers to the extent that they dictate the application requirements. Practicability will sometimes dictate,

The sequences or matrices of the PEJ can be controlled by simple supply of current in the configuration of the open circuit, or more complex control can be used! Fact-intensive evaluation of any specific application dictates the number and level of the appropriate control of infrared radiation. In an accessible, complex or precise control mode, the electrical control circuitry could continuously monitor and simulate input current, voltage, or specific power. Tracking for the most desired power of radiation orresult can be made directlyto measure the power of infrared matrixobio, alternatively, some parameters associated with the target object of infrared radiation. This could have been accomplished by the controversial technologies from the combination of simple thermoparobar pyrometers to much more complicated tech nologies that could take shape, for example, infrared cameras. Anyone who is qualified at the level of technology may recommend a tracking technique for a specific closed loop that is economically sensitive and permissible for the specific application of the invention.

Both direct and indirect tracking methods can be combined. For example, if a specific material is heated to achieve the temperature range of molding, it may be desirable to measure the force needed to form the material and use these data at least as part of the feedback for the mu-dulcation of the infrared radiation matrix. Many other direct or indirect means of reciprocal connection are possible to facilitate optimizationand control the power of the subject matter of the invention.

It must be clearly understood that the shape, intensity, and time of supplying the source of the source of heat of the present invention, as described herein, are highly programmable and subject to a very high level of programmable configurations. Often in industry, custom forms orconfiguration of heat sources are designed and built for a specific component to

to heat up to the correct places of placing on components. With flexible programability of the subject matter of the invention, it is possible for a single heating programmer to serve as a flexible replacement for an almost infinite number of custom-made panels.

The industry is crowded with a wide variety of infrared ovens and processing systems. Suchpicks are used in order to heat the paint of paint, coatings, suspensions of various types and types, and many other purposes. They can also be used in a wide variety of different lines of laminates for heat, melting materials simultaneously or in order to heat the adhesives, adhesion, surface treatments, coatings, or different layers that can be added to the "sandwich" laminate.

Other ovens can be used for a wide variety of applications for drying. For example, in the bottle industry, non-alcoholic beverages from two parts are common to cover the interior of a soft drink bottle, and then transport them continuously through the conveyor bulk through long furnace heat treatment. A non-heat-treated inner coating has the appearance of a white paint when applied, but post-heat treatment becomes almost transparent. In this aspect of the application of the drying and heat treatment of the present invention, it would be possible to select a waveform or a combination of wavelengths that aremost prepared and accordingly absorbed by the material to be dried, processed or heat-treated. In some applications, wavelengths that are not present may be more important for an improved process than those that are present.

It is often desirable to raise the temperature of the targetmaterial, which will be heat-treated or dried, essentially not touching the substrate or primer material. It may well be that the initial material can be damaged by such processing. It is more desirable not to bring him a heat lot still bringing heat to the target mother-in-law. The subject of the invention facilitates this type of selective heating.

In order to consider another application area of ​​wine-making, the medical industry has experimented with radiation treatment in a wide range of visible light and near infrared. It was theoretically predicted that certain wavelengths of electromagnetic energy stimulate and promote the cultivation. Also, it is a postulate that irradiation with certain wavelengths can stimulate the production of enzymes, hormones, antibodies, and other chemical substances within the body, as well as stimulate action in slack organs. Outside this patte-nt are the study of any of the specificdetails or processing methods or merit suchpostulates. However, the subject matter of the invention can be solid-solid, with the choice of wavelength

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and the possibility of programming a source of medium-infrared radiation, which may lash-sew a wide range of such treatments.

However, historically it is true that the medical craftsmanship did not have practical ways to produce high-power, with a specific long-wave radiation in the medium-infrared longvision zone. The present invention will allow such an optical measurement in such a specific infrared wavelength of the narrow zone, and this can be done in a thin, lightweight, safe and convenient form factor that is easy to use for medical applications.

For treatment, there are several very important advantages when it is possible to choose a specific lengthwavelength or combination of wavelengths that are used for irradiation. In the same way as in industrial industrial materials, organic matrices also have characteristic spectral cryabsorbtions / transmissions. Animal, vegetable or human tissue exhibit specific windows of ABS-transmission / erosion, which can be exploited to achieve a great advantage.

A very high percentage of the human body is elec tno composed of water, so it is likely that the curves of ab-sorption / transfer to water is a good starting point for rough approximation for most human tissue. Due to the large study it is possible to develop precise curves for all types of tissue of the man, animals, and plants. It is also possible to develop a relationship between different types of treatment or sti-mulation that could be found from organs or tissues and associated with the absorption / transmission curves. By choosing a wavelength or combination of wavelengths, it would be possible to develop modes of processing that could have a positive effect in a wide range of diseases and diseases.

Some tissues or organs that would be desirable to work, are very close to the surface, while others lie deep within the body. Due to the absorbent features of human tissue, it could not be possible to achieve such deep areas in a destructive way. Perhaps, you need to use some form of invasive technique to put radiation sources near this tissue. By the present invention, it is possible to project the matrix of radiation in such a way that it has a corresponding size and / or shape that is used in a wide range of invasive or non-invasive treatment. While the means of treatment, the (therapeutic) effects of such a configuration are beyond the scope of this discussion, the invention is first in its class, available to make solid, with a selective length of the irradiation wavelength, available in the middle-infrared wavelength region. It can be configured for a wide range of types of work and methods (therapeutic) exposure. Because of its very flexible form factor and programmable non-existence, it is capable of being formed for a specific body and weight, in order to produce the corresponding angles, intensity, and lengths of waves for custom processing.

Infrared radiation will be used to increase the number of medical applications.

Van from hemorrhoids treatment to dermatology. One example of infrared processing, which at this time comes with broadband infrared sources, is called infrared processing coagulation. Additionally, diabetic peripheral neuropathy is sometimes treated by treatment of infrared lamps. "Tactical cacti" and other similar diseases at this time are also often treated with broadband infrared lamps. A combination of the possibility of the present invention to produce specific wavelengths of radiation, as well as its ability to make irradiation in pulsation mode, can provide a substantial improvement to these therapies. It can also provide the best tolerance and comfort to the patient. The invention also facilitates the production of a medical device, whose energy can be provided by safe voltages.

Pulsation of energy of radiation, mit seems to be a key aspect of the multifaceted use of medical treatment. Random radiation can cause overheating of the tissue, while the pulsating radiation may provide stimulation without harmful overheating, discomfort or tissue damage. The fact that devices / matrices can be pulsed from Extremely high standards for the time inclusion, which is measured in microseconds or faster, provide another useful property. It is expected that a very high intensity of pulsed radiation can be tolerated without damaging the matrices, if they are activated for uzhekorotkyh cycles work, because overheating napivp-junction rovidnykovoho not have time to vidbutysyaza such short time pulse. It would allow a greater summed up instantaneous intensity,

The frequency at which pulsation is taking place may also be important. It is known from the literature that certain radiation frequencies of people may have therapeutic or, conversely, harmful effects. For example, certain amplitude modulation frequencies or frequencies of visible light may cause people to be forced, and other amplitudemodulatory frequencies or combination of frequencies cancause epileptic seizures. As a further medical research is done, it can clearly be resolved that the pulsation frequency, the signal form, or the combination of frequencies along with the selected long-wave or wave-wavelength combination have a very significant effect on the success of different treatments by Y-ray. It is highly probable that many of the techniques of the invention used by the present invention have not yet been realized, but have not been realized because the subject of the invention was not available to researchers or practitioners.

Another use of the invention lies in the preparation, processing, or organization of food periods. Usually a very wide range of different types of ovens and heating systems was used to prepare food throughout human history. Therefore, most of them are well known, beyond the scope of this patent, a description is given of the full range of boxes and heating systems. With the remarkable exception-nym cooking of the microwave oven that uses

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the technology of non-infra-red / non-thermal jellies for cooking; in fact, all other cooking technologies use broadband sources of heating of different types. Infrared heat sources and elements used in such ovens are broadband sources. They have the ability to produce specific lengths of infrared energy that could be most beneficial for a specific cooking situation or prepared product.

As discussed previously with other materials, plant and animal products have specific spectral absorption curves. These specificcrystal absorbs are related to the extent to which absorptionor the transmitter of a particular food product is at specific wavelengths. Choosing a specific-fi ne wavelength or a few carefully selectedlength waves to irradiate the subject of food may improve or optimize the desirable culinarycharacteristics. The most effective use of radiation energy can reduce the cost of heating or cooking.

For example, if it is desired to heat or over-fry the outer surface of a particular food product, the subject matter of the invention will allow the selection of a wavelength in which that particular food product is highly absorbent. The result is that if irradiated in the selected length of the wave, the infrared energy will be the entire absorbent very close to the surface, thus causing the desired heating and / or frying will place directly on the surface. On the contrary, if you do not want to overheat the surface, but rather cook your food with a deep finish, then you can choose a long wave or a combination of selected wavelengths, in which certain foods are much more transferable so that the desired cooking result can be reached. In this way, the radiation energy will be absorbed gradually, because it will penetrate to the desired depth.

It is important to note that for electromagnetic waves traveling through nonmetallic material, the intensity of this wave 1 (t) decreases as a function of the longevity of displacement t, as described by the following equation:

And (i) = Io (e^and')

In this equation, Io is the initial intensity of the beam and a is a specific coefficient of absorption for the material. While t increases, the intensity of the beam is subjected to an exponential decay, which is due to the fact that the radiation energy of the original beam is absorbed by the material mass. For this reason, the use of IR infrared heating reaches the optimal results of cooking, caused by the complex interaction between the thickness of food components, the intensity inflicted infrared radiation, irradiation wavelength, and absorption coefficient (s).

Mixing the elements of the RAE that are irradiated at different wavelengths, it is possible to further optimize the result of cooking. Within such a multi-wave matrix, one type of element is chosen at the same wavelength, where the absorption of the radiation energy is low, which in this way allows

There is a penetration of heat into the depths. The other element of the element is chosen, where the energy absorption of radiation is high, which in this way makes the heating of the surface easier. Concluding the matrix, the third type of elementary type of elementary element can be thought up by selecting the wavelength in the intermediate column for these two absorption extremes. Path management with relative emission level From the types of PEU emitters contained in such a matrix, it would be possible to optimize the importance of the properties of cooked food components.

By connecting the color, temperature, and potential sensors to the control system, it is possible to close the contour and further optimize the desired results of cooking. Under these circumstances, it may be possible to check the exact parameter that is considered, and to allow the control system to respond by sending radiation in the appropriate wavelength, intensity, and direction to be the most desirable. By using and integrating the image sensor it would be possible to actually examine the locations and sizes of food products that should be prepared and then optimize the furnace power, as described above. Use in combination with the humidity sensor will provide the opportunity to respond by a combination that will support the desired moisture content. It is therefore possible to understand how the object of the invention, in combination with the appropriate sensors and "

It is also possible to choose the wavelengths that would be absorbed by one meal and not so highly absorbed by the second food, be very selective in the amount of heating that occurs in the mixed portions of food. In this way, it can be understood that changing the combinations and permutations and the intensity of different wavelengths that are chosen is likely to achieve a wide range of specifically designed cooking results.

With any application of the invention, it is possible to use various devices of focusing or directional beam to achieve the desired direction of radiation energy. Selected beam directional devices must be driven in accordance with the operation of the wavelengths of radiation emitted or directed. Using well-understood methods for diffraction, refraction, and reflection, it is possible to send energy from different parts of the matrix of the EEU devices in the desired directions. By way of programmable control of individual devices, which are isolated, and modulating their intensity, it is possible to achieve a wide range of radiation selectivity. Choosing a steady state or pulsation mode and further programming what devices

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pulse at what time, it is possible to increase functionality even further.

Although this disclosure discusses the use of radiating energy primarily in the range from 1.0 to 3.5 micrometers, it is obvious to anyonequalified in the level of technology that similar effectsheating of the material can be achieved at other operating wavelengths, includingmore longer wavelengths in infrared or shorter wavelengths , down through the area of ​​†<†<the smoke. The essence of the disclosed invention includes application of directly solid electron-to-photon emits to heat radiation, where the emitters are apparently exploitative from the visible to the far-infrared. It may be desirable, for certain types of applications, to combine devices according to the invention that choose another wavelength that is emitted in other wavelengths outside the mid-infrared range.

FIG. 8 provides a graphic representation of a single component of the RET 10. RET 10 includes a packet 20. The packet 20 may assume a variety of configurations, such as packet semiconductor layers, and the like illustrated in FIG. In at least one form, the contact 40 (corresponding, for example, to contacts 1105, 1205 and 1305), RET 10 is mounted to the packet 20 via flow 80. When the flow 60 is made to flow through the coupling conduction 80 and the packet 20, the photons are emulated, having a characteristic energy or length -wave wave compatible with the configuration of the package 20.

Since many of the semiconductor experience studied in the production of Ι_Εδ5 can be appropriately applied to the ΕΕ, it is useful to recall the parallelism that may contribute to the development of new PPE devices. Decisive improvements in the efficiency of the energy conversion (optical power on the power / electric power at the input) Ι_Εδ5 took place in the years that have been dated since their introduction into the general market. The energy efficiency of the transformation above 10% was achieved in commercially available Ι_Εû5, which operate in the visible light and near-infrared part of the spectrum. This invention considers the use of a new operation of the RET, operating anywhere within the range from 1 micrometer to 3.5 micrometers as primary elements of infra-red heating in various heating systems. This application describes a specific re-implementation in blow molding systems.

Figures 9 and 10 show a relative percentage of the energy 14 transmitted within the PTFE section of 10-millimeter thickness as a function of the wavelength. Within the diaphragm of quartz transmission (up to 3.5 micrometers), the presence of a strong absorption range (the zone of wavelength with little or no transfer) is evident in several wavelengths, including 2.3 micrometers, 2.8 micrometers, and 3.4 microns. A fundamental notion related to the object of the invention is the use of PPE elements designed and selected to operate in the selected length (s) of the wave within the range from 1 micrometer to 3.5 micrometers as the fundamental elements of heating within the thermal intersection of creating conditions for blow molding machines.

FIGS. 11a, 11b, and 11c show examples of a set of individual Rue emitters 10 packed in a different way to a suitable heating element of the RET 100. In this embodiment, the invention is physically incorporated so that

The N-admixture areas are directly connected to the cathode bus 120. Ideally, if the catheter 120 is made of a material such as copper or gold, both of which are a good conductor of electric tricks as well as heat. The respective regions of the PPE 10 are connected through the connectors 80 to the anodic tube 110. Ideally, the anode bus has the same same electrical and electrical properties as the cathode shi. The input voltage is generated from the outside through the busbars 2, which forces the current (I) to flow within the limits of 10 °, which results in the emission of IR photons and abrading energy, as shown at 170. In the embodiment of the invention, the reflector 130 is used to send the radiation energy in better direction away from the heating element element 100. The small physical size of the ΡΕόε pre-allows it to be more easily directed to the emitting energy of 170, emitted in the best direction. This assertion, comparatively applied to the tip when there is a much more wound thread; and the relationship between the physical size of the emitter and the ability to direct the emitting stream, which occurs, using traditional fook-typing means, are well known in the state of the art.

The heat dissipation 140 is used to eliminate unnecessary heat produced in the process of creating energy 14 of the radiation 170 far from the heating element of the element 100. Heat dissipation 140 can be implemented using a variety of means known in the industry. These means include passive heat dissipation, active heat dissipation using convection air cooling, and active heat dissipation using water or liquid cooling. Liquid cooling through, for example, a liquid shirt, has the advantage of being able to divert a far-fetched amount of heat generated from a few electric energy that has not been converted into doping photons. Taking into account the liquid carrier, this heat can be carried out to the outside of this location or to another area where heat is required. If the heat is taken away from the factory,

Additionally, the bulb 150 is optimally utilized in this embodiment of the invention. The primary function of the flask 150 according to what is used here is to protect the PPE 10 and the connecting wires 80 from being damaged. The flask 150 is preferably constructed of quartz through its transmission range, which extends from the visible to 3.5 micrometers. However, other optical materials, including the glass, have a range of transmission extending beyond the wavelength, in which Pseud 10 could also be used.

One use of the heating element of the element 100, within the blow-up press, is depicted in Fig.12a and 12b. In this system, the procurement of 240 posts in the thermal monitoring and creation of conditions

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for the system 210 through the transfer system 220. Preparations 240 may enter the thermal control control system 210 at room temperature, having been pre-injection squeezed before. Alternatively, the workpieces 240 could arrive directly from the injection injection process, as happens in single-stage in-situ injection systems / blow molding. Alternatively, the workpieces could be made by one of several other processes. Regardless of the form and time of the production of preforms, entering in this way, the workpieces 240 had more quantities of hidden heat contained within their limits.

Already provided by the transfer system220, the billet 240 is transported through the heat control and the control system 210 through the conveyor 250, such conveyors are well known in the promyslest. While the workpieces 240 are moved through the thermal control and control system 210, they are subjected to an IR emitting energy 170, which is still emitted by a series of heating BE0 elements 100. It is useful if these heating BEY elements can take the form of a laser-based BEY of the elements (BE-DE), which will be de Though described below. Infrared energy 170, emitted by these heating elements of the BEEs, is directly absorbed by the preforms 240 in the preparation for entering the blowout system 230. It is to be estimated that the energy may be safe or fading as a function of the current supplied and / or other structural requirements. . Control system, such as control system280, in one form, manages these functional capabilities. As an option, the control system controls the pulsation of the system at the levels of electric current, which is substantially greater than the recommended level of direct current, in order to achieve a higher instantaneous emitting intensity in pulsation mode and response to the input signal from the associated ability of the sensor to determine the time of the pulsation operation.

In a preferred embodiment, blowing blasting operations, using the method and means described in accordance with the present invention, also advantageously utilize the convection cooling system. This system removes unnecessary heat from the air and mechanics that are in close proximity to the workpiece 240 during the process. Conduct cooling devices may also be used to do this. In the state of the art it is known that the heating of the blanks by convection and / or conducting is harmful to the complete thermal process creating conditions. This is because the RET is a very bad thermal conductor, and heating the external per-meter of the workpiece leads to uneven heating, with the too-cool center of the to be too warm the outer shell.

Also, within the framework of a better embodiment of the system, there are temperature sensors 270 (which can take the form of intelligent sensors or a camera capable of monitoring the target in at least one aspect, in addition to being able to measure the temperature of one point), and the control system of the temperature of 280. These aspects of the best design of the blowing mold are particularly applicable to

signs of one-stage system of blow molding. In the unanimous system of blow molding, blanks 240 enter the system of thermal monitoring and the creation of conditions 210, which holds the light energy of the heat received during the stage of injecting pressing. By controlling the temperature and thus the content of the heat of the blanks arriving at 240 (or specific sub-sections of such preparations), it is possible for the temperature control and control system 280, to produce specific heating requirements (or requirements for special subsections), and then communicate these requirements in the form of signals to the individual heating elements of the 100. The solid state and the knitted quick response time of the NEE of the emittance 10 makes them particularly suitable to offset the supplied electric current or the switching It is supposed, be modulated as funktsiyaruhu workpiece.

The temperature control system 280 offers such an initial control that could be implemented as an industrial PC as the embedded customer logic or as an industrial programmatic logic controller (RI_C), the nature and operations of all three are well known in the industry. System management, such as shown as 280, can be shaped by a variety of ways that target them here. However, as some examples, the system can control the status of the duct / duct, the flux electric current and the location of the activated devices for each wave length of the matrix BEY.

In another technique implemented in accordance with the present invention, a method for heating a container using laser radiation is provided. The laser light illuminates the container, usually at its "preform" stage, to soften it through absorption of light. The container is subsequently shaped. The method of energy supply, and the choice of the length (wavelength) of the wave, may be different according to the application requirements. In one form, the selected narrow wavelength range maybe specifically configured to heat requirementsmaterial from which the specificspecific component is manufactured. Although it is possible to make a single-device device to a near-monochromatic wavelength spectrum, it's certainly not necessary to be in this limitation. Often, if the length of the willy is correctly concentrated in the absorption band, plus or minus 20, or even 50 milli-microns can completely satisfy. Other applications, due to the narrowness or proximity of absorption bands, are mildly, should have a very narrow tolerance of lengthwaves. The selected wavelengths selected for use may be anywhere from 1.0 to 5.0 microns, or may be, more practically, buffered from a narrower range of 1.5 to 3.5 microns. Characteristics of the absorption norms of the material at various wavelengths are a factor. If more than one sink is involved, an "window door" evaluation may be appropriate if, for example, one material has to be heated, but not the other. For one, it is necessary to determine whether the wavelengths can be chosen so that one mate- The selected wavelengths selected for use may be anywhere from 1.0 to 5.0 microns, or may be, more practically, buffered from a narrower range of 1.5 to 3.5 microns. Characteristics of the absorption norms of the material at various wavelengths are a factor. If more than one sink is involved, an "window door" evaluation may be appropriate if, for example, one material has to be heated, but not the other. For one, it is necessary to determine whether the wavelengths can be chosen so that one mate- The selected wavelengths selected for use may be anywhere from 1.0 to 5.0 microns, or may be, more practically, buffered from a narrower range of 1.5 to 3.5 microns. Characteristics of the absorption norms of the material at various wavelengths are a factor. If more than one sink is involved, an "window door" evaluation may be appropriate if, for example, one material has to be heated, but not the other. For one, it is necessary to determine whether the wavelengths can be chosen so that one mate-

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The rhythm is a poor absorber, while in that same wavelength, the other is a good absorber. These interactions are a significant aspect of the present invention. By focusing on absorption and / or interactions, optimization of the system can be achieved. The absorption band for a specific material may be selected based on or optimizing the desired depth of heating, the location of the heating, the heating rate or thickness to be heated, in addition, the laser diodes (or other devices) discussed here can be used to pump and The other oscillating elements to reach the desired wavelengths.

The proposed method quickly solves the six-mentioned problems, and gives an irresponsible balance. The basic requirement for any method of heat exchange of radiation corresponds to the spectral absorption of the spectral power of the source of radiation. Standard lasers have many wavelengths to choose the ones that meet these requirements. The efficiency of the power plug for most lasers - between 10 and 20%, which, suitably adjusted to absorbentall, will result in a heat transfer efficiency of 8-15%, compared with only a few% for the existing method. Spatial coherence of the laser light allows it to be placed exactly where the price is necessary. This favorably differs from standard practice, where the light is released in all directions from the filament of the bulb, and there should be a hole aimed in the right direction. The physics of diffused sources gives it a very inefficient. Coherence of laser light is not appropriate for this way, but the brightness, or "orientation" is critical. The lasers are essentially bright, and the light grains of the corresponding wavelengths are driven through the free space with a slight loss, which means that external heating is no longer a problem. Lazers are typically cooled by water, and excess heat goes into a water shirt, rather than in-situ, which makes the management of heat naba-gato more direct. Many lasers are also adapted immediately to a wide range of intensities, and in some applications, their transparency intensity also adapts quickly. and the light-grained light of the corresponding wavelengths is carried through the free space with a slight loss, which means that external heating is no longer a problem. Lazers are typically cooled by water, and excess heat goes into a water shirt, rather than in-vivacity, which does the management of heat naba- gat more direct. Many lasers are also adapted immediately to a wide range of intensities, and in some applications, their transparency intensity also adapts quickly. and the light-grained light of the corresponding wavelengths is carried through the free space with a slight loss, which means that external heating is no longer a problem. Lazers are typically cooled by water, and excess heat goes into a water shirt, rather than in-vivacity, which does the management of heat naba- gat more direct. Many lasers are also adapted immediately to a wide range of intensities, and in some applications, their transparency intensity also adapts quickly.

There are two main approaches to laser energy deposition on the target: a stationary pouch, and a bundle adapted to scan. They will be described separately.

In the first approach, using a constant beam, the laser light is formed by refraction or diffraction, in accordance with the desired profile space and intensity, before it hits the plastics target component or carton container. For a typical blank, which is nominally cylindrical, a combination of lenses is used to extend and collimate the beam, then a simple cylindrical lens is adequate to make a straight-neck profile. The nominal Gaussian profile of the intensity of the typical laser power TEM maymore be modified in several ways, depending on the desired final intensity profile. For homogeneous irradiation, the "cylinder" or pro-film of the flat top is desirable, and can be made.

Several known methods, such as the integrator of the facet bundle, the holographic elements (NUE), and the microlens matrices. Non-homogeneous distributions are usually more relevant, as different segments of the container typically require more heat. This may be best achieved with NOEs, although they can also be produced with a bunch of apodicators. However, apodicators work selectively absorbing parts of the beam, and lead to increased ineffectiveness.

The ideal system begins with the choice of laser-wavelength. This is given by container material and thickness. For PET workpiece with walls 4 mm, the wavelength of 2psp will provide about 90% absorption through the entire thickness of the wall of the workpiece. This is determined by the use of the Beh law and the absorption coefficient for the PET (alpha). To select there are several lasers that emit about 2 microns; UAS with shift of Ramana, No. UAS, and TT: UAS. They all are UAS variants of solid-state lasers, and they are very reliable. The beam and irradiating beam profiling are best achieved by a combination of diffraction and refractory elements, for example, a beam of expanded, collimated, and homogenized expanded rum Galileo accompanied by a facet integrator beam. The plane of a homogeneous beam of intensity resulting from the impact on the NOE that was developed, to change the input to a rectangular shape with a profile of intensity that is higher on the top and decreases to about 1/2 of the maximum in the bottom. The exact form depends on the container, but most require a greater amount of heating above. NOES are very effective devices, and relatively inexpensive in manufacturing. However, some materials may require lasers of longer wavelengths, requiring exotic material for NONE.

Part of the remaining system requires that the means of calling the laser exposed the container preparation at a time when it is in the center of the sample of radiation. It is not necessary, and it may be advantageous for the spatial profile to be smaller than the container directly, and for the three-momentum of the pulse to be long enough for the contour blank to cover through the profile. Some means to provide multiple exposure are also needed, because each container procurement will require multiple exposure or the proposed length of the exposition. This can be achieved by several means, the most direct of which is to arrange the mirror to monitor the coneyer at a specified distance, thus allowing the intensity profile to be supported for a longer time. Often this is meant for the purpose

Another approach is with the aid of a scan beam. The main difference between the approaches of a constant scanned beam is to replace the entire device by the formation of the beam with two devices; electromechanical, servo, or acoustic-optical

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a scanner, and some means for alternating weakening. The acting principle should bring the energy from the laser beam to the target component, quickly scanning the beam across its surface. If the laser scan rate is very fast due to the movement of the component for which it is intended, and the desired heating rate, then there is no difference between these two methods, in terms of prospect. All other considerations apply, but withdrawal from additional optics may be beneficial. The approach scanning does not require that the EOE have been developed and made in advance. Spatial profiles are used, changing the scan margins, and changes in intensity can be made or free-flowing scanner, where more heat is desirable, either by re-scanning some areas, or by shaving the shape of the scan. It is also possible to carry out an active attenuator, or in a laser without intermediate, or lambda / 2 plate, to weaken the base polarization. Any way that makes the laser do less optical energy when the same input energy is adversely affected by efficiency. Changing the scan is overwhelming.

This approach has a different benefit because the pursuit of the purpose, while it passes through the tunnel, is implicit in this approach, whereas some form of this must be adapted to the "constant" beam approach to take into account the target component that quickly moves in and out of the profile, too fast to absorb enough energy in only the passageway.

Referring to FIG. 13, system 2000 is illustrated. It should be understood that the system can be adapted to be a scanning system or a permanent system. The choice of one of these systems is a function of whether certain components are provided (as will be described) mobile. In addition, as shown, the system uses laser diode (e.g., IR-device), and can be used as a replacement for heating elements 100 and otherwise integrated into the system in FIGS. 12a and 12b. Minor modifications to the system, including thermal control and control system 210 may be desirable to adapt the replacement; However, any such changes will be apparent to those skilled in the art. For example, system management through the use of the control subsystem 280 can be adapted to include the control of the scanner's (described) system, to achieve a time-out in the system so that the output energy of the laser gradiometer is synchronized to the displacement. Similarly, operations in pulsation mode and continuous can be controlled in the system sub-control system 280 and other components of the system.

The system 2000 includes the implementation of an ECU based laser diode matrix to produce the corresponding energy wavelengths considered in substantive embodiments. As shown, the system 2000 includes a solid-state EEU-based laser matrix 2002, scanner tools 2004 and a transport system 2006 for exemplary target components, or bundles of 2008, to deliver components to the area of ​​thermal processing of the system. The Matrix2002 includes a mounting board that supports the PE-

based laser diode devices 2010 supported by the limits of the cooling shirt 2012. In one form, the matrix operates to emit one or more selected wavelengths of the infrared emitting energy within the wavelength range from 1.0 to 5.0 microns through the direct electric current-to- photon L-REUs are located in the matrix in ordering, which facilitates emitting a significant part of the energy in the target components. Matrix 2002 also uses a conical mirror2014. Scanner tools can be a X-Y scanner or just a scanner Y, supporting the mirror 2016.

In order to bring the system into action as a scanning engine, one of the matrix 2002, scanning tools 2004, and / or vehicles 2006 is moving during the generation of laser beams. Those who are knowledgeable in this field have an understanding of the various ways in which such movement can be made. However, only one example, the scanning means of 2004 can take the form of a galvanometer that is capable of moving the mirror in directions X and Y. These X and Y movements are typically controlled programmably to repeat the movement, which is a desirable emission pattern. This will allow the target components to be exposed to laser beams.

As another example, the system can be nal-jen to use in its own interest the fact that the target components can move in the water direction (for example, direction X), since they are moved by the transport system in 2006. In this case, the means of the scanner should only act to move the bundles in, as a pie-frame, to the direction Y to achieve irradiation of the oblique areas of the target components.

If the goal is to achieve a constant beam, system components can be sequenced, and the selection of points on the target components transported by vehicles will be irradiated. In at least one form, with the force back in FIG. 12, for example, each laser diode of the laser diod matrix could be focused on specific points. This may be desirable to use the expandable lens of the beam to ensure that the matrix of the designed lasers has the desired coverage area and beam sheath according to the application. In this case, one or both of the scanner oronical mirror, even would not be necessary.

It should be further appreciated that individual IR-devices may either use or not use any collimation or methods of focusing, depending on the specific application. There may be applications where the deviation of the energy diode can provide better coverage or a favorable overlay by using a wider range The presentation is a more conventional, collimated laser beam. Located in the matrix, the original samples of such devices may be imposed for the corresponding and more desirable coverage of the upper goals. In addition, combinations of L-REUs with somewhat of a collimation or focusing beams and other L-PEJU, with deviations can be carried out by beam of radiation. However, as shown in Figures 13a and 13b, the system 2000 is capable of producing laser beams from the matrix

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diodes 2002. The matrix can accept a variety of configurations to satisfy the application. For example, a matrix may contain devices generating a single wavelength or multiple lengths of a wave. In one form, devices that produce the first wave of energy can be strategically combined with devices that produce a second long wave of energy to achieve the desired result. In one form, as shown, the x-in-ones of the diodes are formed at least in part of the cylindrical configuration in order to facilitate the final supply of energy from the laser source to the target component. As shown, these bundles are directed in direction of non-planar, for example, in general, the conic-th, mirror 2014, reflecting the rays in the direction of the device's scanner or means 2004. It must be appreciated that any suitable non-flat mirror-lo can be applied, any such mirror I'm is formed to facilitate the improved delivery of thermal infrared radiation energy from laser diodes to the target component, or to the time component of the target component. Then the scanner device2004 focuses the rays on selected areas of the target component 2008, for example, the workpieces are shown. It should be understood that the variety of devices in the 2004 scanner can be used. For example, multiple scanners can beused, the exact number of which depends onprocess speed, the number of target components, etc. In one form, as shown in FIG. 13b, the multiple scanners of 2004 are shown to be placed in order to enter heat in accordance with the plurality of target components, for example, the medium of the blow molding. Of course, in the environment of a more slow process, or the environment of scanners, having an improved rate of operation,

Now, referring to FIG. 13b, multiple scanner devices 2004 are shown in system 2000. Additional conic mirrors 2002 are displayed in conjunction with each scanner device 2004. The transportation device, such as 2006, and the 2007 product location, are also present. The 2005 track arc for Laser 6 (one of the scanner devices 2004) and the application bundles of the rays 2003 is also illustrated. The destination diagram is shown to illustrate the operation of the system. As shown, the laser 1 irradiates the first, seventh, thirteenth ..., etc. target component that passes past the laser I. Other laser scanner devices irradiate the corresponding components as shown in the diagram. A similar or programmed arc tracking to the arc is for each scanner device. In this way, each component is irradiated for sufficient time and can be irradiated specifically to his needs. Of course, the number of scanners, arc tracking, and the number of components that process each scanner device will change as a function of the consortium and the goals of a specific system.

Next, the scanner device 2004 may have a zerkal 2016 associated with the scanner device, the mirror 2016 acts to send the radiator

the energy in selected parts of the target components. The device may also be capable of re-invoking the radiation energy in a flat, two-dimensional scan area, whereby the third dimension of motion is provided by the transport that transmits the target through the radiation region. The devices can also be capable of redirection of radiating energy within the three-dimensional area of ​​scanning. In at least one form, the scan is programmed so that at least one of the time, the amount of radiation, or the placement of radiation can be controlledracing through the signals defined by the control system. The aqueous form, the entrance to the control system is supplied by temperature sensors or cameras (such as infrared cameras) which, in conjunction with suitable programs, can determine the number and selection of the required radiation time. This configuration provides a suitable feedback connection in order to close contours on the system.

It should also be appreciated that although the matrix-laser diodes or Ι_-ΡΕδ5 are described in connection with FIGs. 12a and FIG. 12b and FIGS. 13a and 13b, the corresponding single laser system can be used to produce the desired radiation. Such the system requires changes to the systems of FIGS. 12a and FIG. 12b and FIGS. 13a and FIG. 13b in order to adapt the architecture of a single, more powerful architecture. Any such changes will be obvious to those who have skills in the level of technology. It should also be understood that different combinations of solid-state lasers, laser diodes, Ι_-ΡΕδ5, and traditional laser systems (as well as ΡΕёε) can be

applied to achieve energy goals and length (wavelength) waves of the invention. In addition, other tech nologies can be combined with the various combiners pitched here to improve the implementation. For example, fiber-optic technology can be used to collect the energy of a laser source and deliver it to a targeted target area. The use of fiber optic configurations can replace other types of optics that can be used to collimate or phase out transmitted energy.

Figures 14-17 illustrate the methods of the appended claims. It should be appreciated that these ways can be applied, using appropriate software and combinations of hardware tools and methods. For example, the mentioned elements of hardware can be managed software, which is stored and completed by the temperature control system280.

Referring now to FIG. 14, a preferred method for heat treatment of thermoplastic exhaust pipes is shown, highlighting the main steps of the operation. Blanks 240 are transported by conveyor 250 through the thermal control and control system 210 (step 305). Of course, it should be understood that, with many embodiments that show transportation, pro-s instruments for placing items for exposure, without transportation, can be used. Preparations 240 are irradiated using scan-based thermal infrared lasers (eg matrix-based 2002 laser-based ΕΕ or laser

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diodes) located within the system of thermal control and control 210 (step 310). The convection cooling system 260 is used to remove unnecessary heat from the air and mechanical components within the system of thermal control and control 210 (Step 315).

Another method 301 for treating thermoplastic blanks is highlighted in Figure 15. In method 301, (step 310), the process of irradiation of 240 pieces using a scanning infrared laser (for example, laser-based LCDs or laser ions) is replaced by Step 320. During Steps 320, a method 301 , the workpieces 240 are irradiated synchronously with their movement through thermal control and the system of creating the appropriate conditions 210. This synchronous, non-pulsed irradiation provides a significant additional energy output, as devices B-CEU, which are currently focused on the workpiece are the only ones that are included at the moment. In one form, the maximum power of impulse energy is synchronously calculated with the transportation of individual targets.

Another method 302 for treating thermoplastic blanks is shown in FIG. In this case, 302, the temperature of the input blanks 240 is measured using temperature sensors270. This is done to calibrate the latent heat energy of the blanks 240 when they enter the system (Step 325) and therefore, how much heat (or time exposure) should be added to bring them to the desired temperature for proper blowing. Blanks 240 are then transported by conveyor 250 through thermal control and control system210 (step 305). The temperature control system280 uses the temperature information supplied by the temperature sensors 270,

to produce the best control signal that is applied to the scanning infra-red laser subsystem (e.g., laser-based solenoid matrix or laser diodes) (Step 330). The control signal is then transmitted from the temperature control system 280 to the scanning infra-red laser the subsystems (step 335). The preparations 240 are then irradiated, using either the lasers contained within the thermal control and control system 210 (step 310). The convection cooling system 260 is then used to remove unnecessary heat from the cathode I and mechanical components within the thermal systems-we control-210 (Krok315).

Still another method 303 for treating thermoplastic blanks is highlighted in Figure 17. In step 303, step 310, the process of radiation irradiation of the blanks240 using a scanning infra-red laser subsystem (for example, which has a matrix-based EIR or laser diodes) is replaced Step 320. During Step 320 of method 303, the workpieces 240 are pulsed irradiated synchronously to their movement through thermal control systems and the creation of appropriate conditions 210.

The foregoing description simply provides the disclosure of specific embodiments of the invention and is not intended to restrict it. Also, the invention is not limited to the scope of the above-described applications or embodiments. This disclosure addresses the additional uses of the invention in general terms, and one embodiment of the application specifically. It is known that one skilled in the art can design alternative applications and specific embodiments that are within the scope of the invention.

A) emitter contact

B) p-type ball {ex. IpOaA)

C) p-type layer (cf. IπΡΑί)

O) Intermediate layer (ex. IpOaAz)

E) quantum dot ball

P) mutual layer (ex-IoAaAz)

C) P-type buffer layer (βχ.ΙηΡΑώ)

I) p-type layer of lateral conductivity (I_SY_) (ex.IpbaAz) D) semi-insulating semi-substrate substrate

infrared reflector (ex.5. IR / AI)

K) basic contact

FIG. 4

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/ 23 ©

/ 2 "-5

/ 210

/ 2 "s

/ and «>

A)

B)

C) O) E) P <2) E) ccK) Ts

Contact emitter (incl. IpCal)

friable (ex. ipSaAz)

p-admixing (ex.

shell layer (^eh- ipSalS)

point warp (ex.IpAz) shell envelope (ex. ipSaAz)

n-impulsive (operating system)

n-admixing (ex. ipSaAz)

substrate (ex.

reflector (ex.5U / Ai) basic contact

/? g5

3X0

/ 3/5

/ 335

FIG. 5

FIG. 7

<tr><td><p>AND)</p></td><td><p>emitter contact / infrared reflector</p></td></tr><tr><td><p>IN)</p></td><td><p>n-admixing</p></td><td><p>(oops iAsAs)</p></td></tr><tr><td><p>AT</p></td><td><p>Preferable</p></td><td><p>eh IpSaAz)</p></td></tr><tr><td><p>IN)</p></td><td><p>p-admixing</p></td><td><p>(ipraz)</p></td></tr><tr><td><p>L.</p></td><td><p>shell layer</p></td><td><p>■ (ex. IpSaAz)</p></td></tr>

Corner layer ^ EiAz)

O) shell layer (ex. IpSaAz)

H) n-admixing (exe)

About p-admired («ipSaAz)

- ") side conduction layer (ex. IpR)

K) basic contact

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ı

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target component x pop

radiation_, "^ -side view

unheated area

Laser diode devices

solid state CU based laser matrix

shirt

cooling (2012)

.konical mirror

X-W Scanner ToolsX Scanners (2004) - Mirror (2016)

raislotri means (2006)

nairita area

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Computer layout N. Lysenko Signature Circulation 24 copies.

Ministry of Education and Science of Ukraine

State Department of Intellectual Property, st. Uritskogo, 45, Kyiv, SME, 03680, Ukraine

State Enterprise "Ukrainian Institute of Industrial Property", st. Glazunova, 1, Kyiv - 42, 01601