System of threating of for the food warming, the method of preparing, drying or preservation of the food item and the method for processing of the food item

UKRAINE ₍₁₉₎ iA (11) 106979 (s) C2

(51) IPC

A23B 1/164 (2006)

'HOW'

STATE SERVICE BANITELECTUAL PROPERTY IN UKRAINE

(12) DESCRIPTION TO THE INVENTORY PATENT

(21) Application number: a 2011 11669

(22) Date of application: 05.03.2010

(24) Date from which the law of 10.11.2014 is in force:

(31) Number of the previous 61 / 157,799 applications submitted in accordance with

Paris Convention:

(32) Date of submission 05.03.2009

previous application

in accordance with the Paris Convention:

(33) Code of the State party υδ of the Paris Convention,

to which a previous application has been filed:

(41) Publication of information 10.01.2012, Bulletin No. 1 on application:

(46) Publication of information 10.11.2014, Bulletin No. 21 on the issuance of a patent:

(72)

(73)

(74)

(56)

(86) The number and date of the PCT / i82010 / 026438,

international representation _05/03/2010application filed

in accordance with the PCT Agreement

Inventor (s):

Kochren Don V. (υδ),

Johnson Benjamin, D. (US),

Kats Jonathan M. (a),

Ross Denwood F. (a)

Owner (s):

PRESS CONCEPTS, INC.,

29200 Aigoga RoaS, Salon, OH 44139, Ileebessa et al.

Representative:

Pavlovich Natalia Vladimirovna, registry. No. 195

List of documents taken into accountexpertise:

ıδ 2007/0096352 A1; 03.05.2007vδ 4331858 A; 25.05.1982vδ 2006/0280825 A1; 14.12.2006vδ 2006/0118983 A1; 08.06.2006vδ 5382441 A; Jan. 17, 1995; 6069345 A; May 30, 2000, 5820820 A; Oct. 13, 1998; 5589210 A; Dec 31, 1996 and 8769 υ; 15.08.2005uA 39714 A; June 15, 2001

(54) FOOD PROCESSING SYSTEM, PREPARATION, EXTRACTION AND PROTECTION OF FOOD OBJECTS AND PROTECTION OF FOOD OBJECTS

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(57) Summary:

A system for direct injection of radiation or energy of the selected wavelength infrared (IR) band range into food objects for a variety of processing purposes is proposed. These goals may include heating, raising or maintaining the temperature of food products. The system is especially applicable to operations that require or take advantage of the ability to irradiation at specific selected wavelengths or to gating or injecting radiation. The system has special advantages when it operates at high speeds and in the absence of contact with the object.

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BACKGROUND

For thousands of years, many different ways of cooking were carried out with the help ofvarious broadband heat sources. The earliest and most fundamental source of heat, commonly used by man for heating was the fire. It creates a radiant thermal energy in the range from UV to long-wavelength infrared light. The actual form of the output curve, which expresses the intensity of radiation at each length of the wave, changes as a function of the temperature of the flame. Despite the fact that the burning of wood or coal gave way to furnaces or hobs, which are melting with oil andgas, the principle remained the same, namely, the flame is a broadband source of radiantenergy. The basis of knowledge has grown, based on the assumption of a publicly available broadband equipped stove cooking. With the spread of electricity in the early 20th century, heating coils consuming electricity due to their resistance, were oftenused instead of various sources of combustion. These resistive heating coils in the industry are often referred to as the common name of Calrody. Although they seemed consumer-modern and modern, they still remained fundamentally very broadband sources of radiation. This is well known, but is clearly demonstrated by the fact that a caloric type heating heater can produce a bright red glow, indicating the existence of the output in the visible spectrum, and also continuously generate energy far beyond its boundaries in the region of long-wave infrared radiation. Although this is the source of a very broadband output, its peak output, depending on its operating temperature,

Over the last few decades, quartz halogen lamps, tubes and lumptocogs have been used in various types of furnace or conservation applications. Since quartz is approaching the hotter black body of Planck's source, it produces substantially more energy in a visible spectrum than conventional resistive heat sources. Different quartz lamps are intended for work at different temperatures, changing the center of their original curve, also affecting how much energy the visible light generates. Center or peak output is usually found in near infrared or medium infrared ranges. Regardless of its operating temperature, quartz is still a broadband source, the peak output is in the near or medium infrared range, and the width of the band is several thousand nanometers.

As cooking sources of heat for specialized furnaces, evenlamps of incandescence with tungsten hair were used. Franklin S. Malik (Rogakkip 8. Mayisk) in its US Patent No. 4,481,405 offers a simple system that uses incandescent lamps for cooking in plastic bags for cooking. Although quartz is more of an unusual or specialized furnace than simple resistive spirals or burners, it obviously relates to broadband analog illuminating devices, which are used as sources.

Different combinations of these modalities were used, but all of them simply in different ways combine broadband analog devices. Robert A. Mittelstadt (ROBERTI A. MINEIZIIABI) in US patent number 4,486,639 offers one of the earliest methods of multivariate cooking. It offers a combination of a microwave oven with heating devices on the basis of a quartz lamp. With the possibility of controlling the use of quartzlamp either for direct irradiation, or for heating air with subsequent cooking throughconvection of hot air, it combines three different functionalities in one oven. Although microwave cookery is probably the newest, fundamentally different fromprevious, culinary technology, fundamental radiofrequency microwaves lying in itsbasis, in fact, is a broadband analogue source than those mentioned above. In fact, all the culinary devices that were available on the market of the present invention relate to analog broadband types.

Ronald Lenz (Ropaib I_epyh) and others understood and re-laid out some of the basic ideas in his patent US No. 5,382,441. They realized that long-wave infrared radiation penetrates into food at a lower depth than radiation of lower wavelengths. They also understood and repeatedly laid out at some depths of classical physics the Planck's law for the blackbody, which describes the output of broadband radiation, which changes as a function of the temperature of the heating device. They realized that, although they are likely to be able to regulate the wavelength of the output, they do not have a simple, direct or effective solution to this problem. They are absolutely unable to do this effectively. Therefore, they offer the use of a broadband analogue source and establish a filter between the source of radiation and the food that is being prepared. They offer either a water filter or a filter with

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treated glass They realized that even with the best choice of a quartz lamp, "as it was installed, a maximum of 35% of its radiation is generated in the range from 800 to 1300 nm." Therefore, proposing to use a filter, they are going to emit 65% of the energy that is produced. These 65% will be absorbed by the filter and will either lead to overheating of the filter and, thus, turn it into a blackened emitter, or it is necessary to use some external means for removing heat from the medium of filtration. This will make implementation difficult. In any case, this is an extremely inefficient way of recovering unnecessary wavelengths from a broadband analogue source. Although they offer a limitation of exposure, reaching the goal, with a bandwidth of about 500 nm, they failed to get rid of the broadband source. They were not able to offer a high separation curve. Therefore, they failed to suggest or understand that the curves of absorption of many products contain microscopic and microprojections, which can not be solved by their ineffective method. For example, the present invention may be based on the fact that: the high-resolution curve indicates that the pizza dough absorbs about four times as much as 1200 nm, than 900 nm. One and the same dough absorbs about three times as much on 1200 nm, than on 1100 nm. Lenz and others did not succeed in proposing any solution that could take these important data to optimize the way of cooking over what can ensure their solution. They also failed to offer a digital semiconductor belt source or a way to create or implement it. They also failed to show which advantages could provide a narrowband source. They also failed to suggest or invene any "instantaneous" / "instantaneous shutdown" technology. They also failed to propose any technology of pulsed radiation, as well as describe its advantages. Although they accidentally mentioned that their invention can be implemented in practice with other sources of infrared radiation, none of them is described as digital or semiconductor or narrowband, or directional. They also failed to propose ways to implement any sources of infrared radiation, based on direct electron-photon transformation. Obviously, the essence of their invention is to use a filter to relieve or eliminate some unwanted wide range. nor invent any "instantaneous" / "instant shut-down" technology. They also failed to propose any technology of pulsed radiation, as well as describe its advantages. Although they accidentally mentioned that their invention can be implemented in practice with other sources of infrared radiation, none of them is described as digital or semiconductor or narrowband, or directional. They also failed to propose ways to implement any sources of infrared radiation, based on direct electron-photon transformation. Obviously, the essence of their invention is to use a filter to relieve or eliminate some unwanted wide range. nor invent any "instantaneous" / "instant shut-down" technology. They also failed to propose any technology of pulsed radiation, as well as describe its advantages. Although they accidentally mentioned that their invention can be implemented in practice with other sources of infrared radiation, none of them is described as digital or semiconductor or narrowband, or directional. They also failed to propose ways to implement any sources of infrared radiation, based on direct electron-photon transformation. Obviously, the essence of their invention is to use a filter to relieve or eliminate some unwanted wide range. as well as describe its advantages. Although they accidentally mentioned that their invention can be implemented in practice with other sources of infrared radiation, none of them is described as digital or semiconductor or narrowband, or directional. They also failed to propose ways to implement any sources of infrared radiation, based on direct electron-photon transformation. Obviously, the essence of their invention is to use a filter to relieve or eliminate some unwanted wide range. as well as describe its advantages. Although they accidentally mentioned that their invention can be implemented in practice with other sources of infrared radiation, none of them is described as digital or semiconductor or narrowband, or directional. They also failed to propose ways to implement any sources of infrared radiation, based on direct electron-photon transformation. Obviously, the essence of their invention is to use a filter to relieve or eliminate some unwanted wide range. based on direct electron-photon transformation. Obviously, the essence of their invention is to use a filter to relieve or eliminate some unwanted wide range. based on direct electron-photon transformation. Obviously, the essence of their invention is to use a filter to relieve or eliminate some unwanted wide range.

As a result of many years of research, it has been proved that the wavelength of irradiation has a different effect on cooking. For example, in the general case it is clear that very long waves have the property of surface absorption, that is, they can heat the targetfood object only near the surface. That is why most modern ovens are usually not allowed to expose food to direct irradiation with sources of long infrared waves, until the superficial heating does not lead to the desired end result. Grill heating elements are usually installed over the food that is being prepared so that they can directly irradiate it, thus burning and cooking near the surface. Baking heating elements, on the contrary, are installed under food, so that a fryer or dish for preparation is located between the food and the heating element, because of which the food is not subject to direct irradiation by long-wave infrared radiation. Another example of this idea is presented by David McCarthy (OAUIB MSCAGIEG) in US Pat. No. 6,294,769, wherein the infrared device is proposed to support the food warm and ready for use. Specifically, the described system is useful for supporting foods such as potatoes at the desired temperature does not lead to substantial additional internal preparation. It is proposed to use an ohmic broadband ceramic heating element, which generates in large volumes of thermal infrared radiation in the wavelength range from 7.91 to 4.7 μm. In FIG. 1 is shown a graph of its absorption in carrot frit, which, in general, demonstrates an increase in absorption with an increase in the length of the wave up to the peak absorption at a wavelength of about 5.4 microns and the subsequent decay absorption to the maximum wavelength shown in the graph is equal to 7 microns. The specific absorption coefficient for potato fries ranges from about 62% to 4.7 μm to about 95% to 5.4 μm and then decreases to about 73% at 7 μm. McCarrow failed to suggest the use of narrowband energy and digital source, which facilitated the perfect harmonization of the wavelength of radiation with a specific absorption coefficient necessary for use. In the broadband configuration described by McCarthy, potatoes demonstrated 50% higher absorption at one wavelength compared with a wavelength, remote only at 700 nm. Using precisely the narrow-band source, which it was able to find, he was unable to tune in to an absorption that could have become perfect. The price is possible with the help of broadband sources. He also failed to offer a digital heating system, which can be instantly turned off and include for food support at a strictly defined temperature, but with significant energy savings thanks to

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reduced working cycle, since energy is only consumed when the heating devices are switched on. It shows a graph of very low ability that corresponded to its purpose. However, considering the lack of ability to provide more precise forms of the absorption curve, he does not assume that there is the possibility of obtaining the same average absorption at a much shorter wavelength than could be illuminated by a narrowband system that emits an enclosed micropike, rather than at a global peak.

Young Kion Kim (Uapd Kuoepd Kit) and others in US Patent No. 6,348,676 propose a method for using quartz lamps for cooking. They assume, as mentioned above, that the shape of the output curve may change as a function of the operating temperature of the lamp. They offer a quartz lamp designed for operation at a temperature of 2400 ° K. The device has a peak output at a wavelength of about 1.1 microns. In comparison, a device operating attemperature of 2300 ° K, has a peak output of about 1.25 microns with a slightly flater outflow. Regardless of the wavelength of the maximum output, it is shown that the curves for both devices have a significant output over the visible range and up to 3 microns or more in the middle infrared region. In FIG. 2 Kim shows the spectral absorption curves for various edible objects. Although these absorption curves are low in strength, Each curve is unique and differs from all others. In the general case, they are united substantially higher than the transmission (belowabsorption) at wavelengths smaller than about 1400 nm, than on longer waves. I learned to prove that using a lower-temperature quartz lamp, you can cook faster due to the higher yield of more long-wave energy of infrared radiation, which, in general, is more absorbing, as shown in the general case, for wavelengths over 1400 nm . Kim and others have not been able to offer how to use optimal absorption for the preparation of individual food items. Again, food objects have in their absorption curves local mosaics and microwaves, which differ significantly from each other. Significant differences are observed even within the limits of less than 100 nm of wavelength. Probably, these small signs are not very useful for Kim and others, because the graph presented by them is very poorly comprehensible or detailed. Having studied the broadband shape of the curves shown in FIG. 2, it is possible to understand that it is impossible to irradiate and use a wavelength that is consistent with any of the microparticles or microbes that may characterize a particular food product. Like McCarthough, they were not able to offer any method of cooking with digital narrowband radiation for complete optimization. culinary opportunities andeffectiveness. shown in FIG. 2, it is possible to understand that it is impossible to irradiate and use a wavelength that is consistent with any of the microparticles or microbes that may characterize a particular food product. Like McCarthough, they were not able to offer any method of cooking with digital narrowband radiation for complete optimization. culinary opportunities andeffectiveness. shown in FIG. 2, it is possible to understand that it is impossible to irradiate and use a wavelength that is consistent with any of the microparticles or microbes that may characterize a particular food product. Like McCarthough, they were not able to offer any method of cooking with digital narrowband radiation for complete optimization. culinary opportunities andeffectiveness.

Brian Farkas (Vgiah Gagkas) and others in US Patent No. 7,307,243 propose other approaches for the use of a mixture of broadband sources. They also realized that longer waves, in general, are absorbed closer to the surface of food objects, and vice versa, shorter waves are characterized by deeper penetration. They suggest the use of black sources of the source of a variety of capacities and temperatures. They showed on several charts as these traditional analogue broadband sources can vary with respect to the central wavelength and plane curve. They again show what is well known in physics, namely, that when the working temperature of the black body of the source increases, the central length of the wave decreases. Accordingly, with a decrease in the wavelength, the curve goes somewhat steeper and becomes more narrow. However, as before, it shows that for a wide variety of applications, it is an analog wide-band source with a width of several thousand nanometers, for which the steepness and curves are proportional to the applied voltage or current (power). They furtherunderstand that the case and structure of the furnace itself is heated over a period of time and it is becoming a blackhead secondary emitter. They assume and show that even when the heating elements are disconnected, the furnace still continues a significant beam cooking inresult of secondary radiation of the structure. This is a significant deviation from the present invention, which is capable of instantaneously turning on and off, and the heating time practically does not affect the quality of cooking. Farkas continues to offer what is known for many years, only with another design of the furnace. Farkas, like the other authors mentioned above, failed to offer any advantages that can be obtained from the present invention, which involves digitization of narrowband sources, to use microspheres and micro-spikes in the curves of high-level absorption to optimize the desired heating or cooking. They failed to propose an increase in the speed of cooking, the possibility of which is due to the use of directed narrowband radiation, duly coordinated by the object and modes of cooking.

All other patents offer new ways of regulating or switching traditional analogue broadband sources up or down or changing their distance from the culinary object.

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U.S. Patent No. 5,883,362 issued by Donald Pettiboon (Oopayeb Reynyop) and others is an example of such a patent, but they also failed to offer any advantages, methods, and technologies, as opposed to the present invention.

HOW TO FIND

The present invention allows for the provision of small or substantial amounts of infra-red radiation devices having a high selectivity in wavelengths and facilitating the use of infrared radiation for completely new classes of clinical applications and methods that were previously unavailable.

It is an object of the present invention to provide a furnace, process or system of treatment with an infrared heating system having an enhanced efficiency of converting infra-red energy.

Another object of the present invention is to provide a system for infra-red heating, in which the depth of infiltration of infrared radiation is adapted to a specific spectrum absorption of a particular material that is being prepared, processed, or target material.

Another object of the present invention is to provide a system for thermal infrared emission, which may include a projected mixture of infrared diodes producing infrared radiation in selected narrow bands of wavelength, which may be optimal for classes of culinary applications.

Another object of the present invention is to provide an infra-red heating system capable of operating in pulsed mode; and the pulse mode is particularly suitable for infrared heating of food objects as they are transported during the culinary process or to facilitate the synchronous tracking of food objects.

Another object of the present invention is to provide infra-red heating elements that have a high orientation due to metallic reflective elements.

Another object of the present invention is to provide a system for infra-red heating capable of working in conjunction with a food temperature measurement system to provide infra-red heating, depending on the type of food.

Another object of the present invention is to provide infrared heating elements manufactured in the form of matrices of semiconductor direct emitters for direct transformation of a current in infrared radiation or infrared diodes (IRs).

Another advantage of the present invention is to provide a system of thermal injection using digital digital narrowband semiconductor devices made in the form of matrices with the use of at least one of the variety of devices mounted on a conductive printable board, devices made by surface mounting of crystals, devices mounted using a ballpoint matrix contacts, devices of the enlarged size and devices based on the integrated circuit.

Another advantage of the present invention is to provide a system of infrared irradiation with an essential emission of radiation in a strictly defined one or several narrow ranges of wavelength.

Another advantage of the present invention is the ability to generate powerful thermal infrared radiation and high programming with respect to at least one of the parameters, namely position, intensity, wavelength, frequency of on / off, direction, pulsation frequency, and product tracking.

Another advantage of the invention is to provide a method that is more efficient in relation to the energy leakage of thermal energy in comparison with modern broadband sources.

Another object of the present invention is to provide a general radiant heating system for a wide range of applications to which it can be applied to provide enhanced infrared radiation functionality, selected wave lengths, in conjunction with the programmedness and the ability to operate in pulsed mode.

Another advantage of the present invention is the ability to provide extremely fast sequence of pulses of high intensity with much higher instantaneous intensity, low intensity in steady state. Stroke also allows you to receive an instantaneous pulse of higher energy, which allows you to reach a greater depth of penetration, which can play an important role in some applications.

Another advantage of the invention is the possibility of modular construction using ultrasonic semiconductor devices to include such a number of devices, which need to be placed together to provide the required power, size, configuration, geometry, combinations of wavelengths or other aspects proposed by the construction for a specific application. The matrices of these devices can include dozens, hundreds or thousands of devices in accordance with a particular application.

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Another advantage of the invention is that exhaust heat can be easily removed in the other place where it is needed, or can be removed from the use environment to reduce non-target heating.

Another advantage of the invention is the ability to build a system of stove or target heating, the external exhaust heat which can be easily removed from the immediate vicinity of digital narrowband semiconductor devices and transferred to the desired location, even outside the premises.

Another advantage of the invention is that the devices of infra-red diodes can be arranged with a high density to provide levels of output power of thermal infrared radiation characteristic of a solid which were previously practically inaccessible.

In one aspect of the embodiments described herein, the system comprises an irradiation zone in which a food object can be placed in at least one of the direct or indirect irradiation, a structure for retaining irradiating devices in the vicinity of the irradiation so that irradiation from the irradiation device can directly or indirectly affect the food an object, at least one narrowband semiconductor emitting device, capable of selectively emitting, in at least one narrow band, at least at least More than one narrowband semiconductor emitting device is a digital device, due to which it has a very narrow range of voltage variations at its own limit, and at least one ultraband device is selected based on the output wavelength of the irradiation,

In another aspect of the described application variants, the system further comprises a review window, the location of which permits observation of an irradiation zone without passing the initial wavelength of irradiation.

In another aspect of the described application variants, the system further comprises a slider system for selectively disconnecting radiation during observation.

In another aspect of the described application variants, the system further comprises at least one door capable of retaining the output wavelength of the irradiation in the system.

In another aspect of the described application variants, the system further comprises sensors capable of recording the position of food objects.

In another aspect of the described application variants, the sensors comprise a chamber that registers the position of the food object, type of food, and the size of the food object.

In another aspect of the described application, the camera is an infrared camera.

In another aspect of the described application variants, the output signal of the sensors is used to determine the state of localization.

In another aspect of the described application variants, the system further comprises a conveyor system for transferring food objects to an irradiation zone.

In another aspect of the described application variants, the system further comprises sensors capable of recording at least one aspect of the food object at least until, during or after irradiation and act as a result of the registration.

In another aspect of the described application variants, sensors include a chamber that registers a position, type of food, and the size of the food object.

In another aspect of the described application, the camera is an infrared camera.

In another aspect of the described embodiments, at least one aspect is temperature, surface dryness, color, or size.

In another aspect of the described application variants, a narrowband irradiating device generates its narrowband radiation in the near infrared range of about 700 nm and 1200 nm.

In another aspect of the described application variants, the narrowband irradiating device generates at least one narrow band of irradiation in the medium infrared range from 1200 nm to 3500 nm.

In another aspect of the described application variants, the narrowband irradiating device generates at least one narrow band of irradiation within the range of visible light.

In another aspect of the described application variants, the narrowband irradiating device generates at least one narrow band of irradiation in the wavelength range of more than 3500 nm.

In another aspect of the described embodiments, at least one narrowband semiconductor emitter generates its narrowband radiation in two different narrow bandwidths of irradiation wavelength, each of which is selected so that

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the wavelength was consistent with the absorption characteristic of the predicted object irradiation.

In another aspect of the described application variants, the characteristics of absorption of foodobjects differ in the center of each of the two bands of wavelength.

In another aspect of the described application variants, the system further comprises broadband irradiating elements selectively activated to prepare a food object besides narrowband heating.

In another aspect of the described application variants, broadband illuminating elements contain at least one of the layers of quartz, sensitive heating elements and microwave elements.

In another aspect of the described application variants, the system uses at least two (2) radiation ranges, one of which is below 1400 nm, and the other is above 1400 nm.

In another aspect of the embodiments described herein, the system comprises a cooking chamber, the configuration of which allows it to safely hold the energy of radiation in which the food object can be located for at least one of the direct or indirect irradiation, a structure, at least partially surrounding the cooking chamber, designed to hold directional irradiators near the culinary zone, so that irradiation of radiation devices can be carried out on the food object, at least one of the direct or indirect effects that aymenshe one narrowband semiconductor vyprominyuyuchyyprystriy, and at least one narrowband semiconductor vyprominyuyuchyyprystriy is chosen so that its output wavelength radiation consistent with at least one characteristic absorption at least

In another aspect of the described application variants, the system further comprises a review window, the location of which permits observation of an irradiation zone without passing the initial wavelength of irradiation.

In another aspect of the described application variants, the system further comprises a slider system for selectively disconnecting radiation during observation.

In another aspect of the described application variants, the system further comprises a conveyor system for transferring food objects to an irradiation zone.

In another aspect of the described application variants, the system further comprises sensors capable of recording at least one aspect of the food object, at least until, during or after exposure, and action as a result of the registration.

In another aspect of the described application variants, sensors include a chamber that registers a position, type of food, and the size of the food object.

In another aspect of the described application, the camera is an infrared camera.

In another aspect of the embodiments described herein, at least one aspect is temperature, dryness of the surface, color, or size.

In another aspect of the application variants described herein, the narrowband irradiating device generates its narrow band radiation in the near infrared range of approximately 700 nm and 1200 nm.

In another aspect of the application variants described herein, the narrowband irradiating device generates at least one narrow band of irradiation in the average infrared range from 1200 nm to 3500 nm.

In another aspect of the described application variants, the narrowband irradiating device generates at least one narrow band of irradiation within the range of visible light.

In another aspect of the described application variants, a narrowband irradiating device generates at least one narrow band of irradiation in the wavelength range of more than 3500 nm.

In another aspect of the described embodiments, at least one narrowband semiconductor emitter generates its narrow band radiation in two different narrow bandwidths of irradiation waves, each of which is selected so thatthe wavelength is consistent with the absorption characteristic of the predicted object irradiation.

In another aspect of the described application variants, the characteristics of absorption of foodobjects differ in the center of each of the two bands of wavelength.

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In another aspect of the described application variants, the system further comprises broadband irradiating elements selectively activated to prepare a food object besides narrowband heating.

In another aspect of the described application variants, broadband illuminating elements contain at least one of the layers of quartz, sensitive heating elements and microwave elements.

In another aspect of the described application variants, the system uses at least two (2) radiation ranges, one of which is below 1400 nm, and the other is above 1400 nm.

In another aspect of the described application variants, the control system comprises a cooling system capable of cooling the system electronics.

In another aspect of the described application variants, the system further comprises a warning system capable of informing the user of the state of the food preparation process or the system.

In another aspect of the described application variants, the system further comprises a system for ventilation, capable of purifying the cooling chamber, at least from humidity, smoke and vapor.

In another aspect of the embodiments described herein, the ventilation system comprises a vat or catalyst.

In another aspect of the described embodiments, the method comprises the steps of introducing at least one target food object into an irradiation zone and placing it in such a way that it can be directly or indirectly irradiated by radiating devices, safely isolating the radiation zone, emitting directed radiation from at least one digital narrowband semiconductor illuminating device during periods when the radiation zone is safely isolated and irradiated at least one food object at a minimum moreover, one narrow band of wavelength, which is consistent withcharacteristics of absorption, at least one target food facility in the movement radiation.

In another aspect of the described embodiments, at the irradiation stage of at least one food object, at least one food object is stained, depending on the directed radiation.

In another aspect of the embodiments described herein, the method further comprises the steps in which the element is irradiated to add the selected taste to at least one food object.

In another aspect of the described application variants, at least one irradiating device is struck at the radiation stage.

In another aspect of the described application variants, at least one narrow band of lengthswaves contains two wavelength ranges selected on the basis of absorption characteristics, which significantly differ in the center of each of the wavelength ranges.

In another aspect of the described application variants, the centers of selected ranges of length are wavelength apart, at least 150 nm.

In another aspect of the described applications, at least one narrow seamstrength of the wave delivers a deep penetration into the food object.

In another aspect of the described application variants, at least one narrow seamstrength of the wave is achieved by the surface heating of the food object.

In another aspect of the described variants of application, at least in one narrow seamstrength of the wave, a deep penetration into the food object is obtained without heating the surface of the edible object.

In another aspect of the described application variants, the method further comprises a step at which an at least one food object is irradiated using a broadband source.

In another aspect of the described application, the irradiation provides both a deep penetration into the food object and a surface roasting of the food object.

In another aspect of the described embodiments, the method comprises the steps in which a food object to be prepared, preserved or dried, into an irradiation zone in the vicinity of at least one narrowband semiconductor source radiation, irradiates the food object during a period of time the help of at least one digital narrowband semiconductor radiating device at the wavelength, which corresponds to the preferred characteristic of the absorption of foodobject at this length and waves, and control irradiation by registering at least one aspect of the edible object, at least until, during and after irradiation, and acting as a result of registration.

In another aspect of the described embodiments, the method comprises the steps on which the food object is transported to the culinary chamber, the position of the food object is recorded at the time of transport of the food object to the culinary chamber, and determines that the food object

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is in the right position, ceases transportation on the basis of determination, closes the culinary chamber for the safe content of the camera, registers or introduces the aspects of the food object, determine the culinary pattern on the basis of registration or introduction on the basis of culinary parameters, irradiate the food object on the basis of the culinary template during a period of time with the aid of at least one digital long-band semiconductor emitting device at a wavelength that corresponds to an overwhelming character erystytsi food absorption object to this wavelength, open cooking chamber after irradiation, food and transport facility zkulinarnoyi camera.

Brief description of the drawings

FIG. 1 is a graph showing the absorption curve.

FIG. 2 is a graph showing the absorption curve.

FIG. 3 - scheme of narrowband emitting device.

FIG. 4 is a schematic diagram of a narrowband emitting device.

FIG. 5 is a schematic diagram of a narrowband emitting device.

FIG. 6 - schema of a narrowband emitting device.

FIG. 7 is a schematic diagram of a narrowband emitting device.

FIG. 8 is a circuit of a narrowband emitting device.

FIG. 9 is a circuit of a narrowband emitting device.

FIG. 10 is a diagram of the matrix of narrowband emitting devices.

FIG. 11 is a graph showing the absorption curve.

FIG. 12 is an illustration of an embodiment of the described variants of application.

FIG. 13 is an illustration of an embodiment of the described variants of application.

FIG. 14 illustrates an embodiment of the described variants of application.

FIG. 15 is a graph showing the operation of "instantaneous switching devices" in contrast tosome heating devices.

FIG. 16 is a diagram of the relationship between absorption and transmission.

Detailed description

The present invention encompasses a system for direct injection of digital, narrow-band thermal infrared (IR) energy at certain wavelengths, into food and other target objects for a wide range of heating, preparation, processing and preservation applications, including various types of preparatory operations for cooking, used for bread, confectioneryproducts, packages, individual prescription components, pizza, meat, seafood, poultry, vegetables, food semi-finished products or porridge, portions or combinations thereof, or various other processes heating The purpose of the practical application of the present invention may include heating, increasing or maintaining food temperature or other objects for cooking, baking, roasting, providing protection, roasting, heating, fermenting, preserving and drying, as well as other reactions, provided for the manufacture or preparation of foodproducts or other products. The invention is particularly suitable for operations that require or take advantage of the implementation of digital semiconductor narrowband emitting at specifically selected wavelengths by directing, gating or injection of radiation energy. This new system has special advantages when an application requires at least one of high speed, high performance, high selectivity or high energy efficiency, depending on the applications to which the invention applies. gating or injection of radiation energy. This new system has special advantages when an application requires at least one of high speed, high performance, high selectivity or high energy efficiency, depending on the applications to which the invention applies. gating or injection of radiation energy. This new system has special advantages when an application requires at least one of high speed, high performance, high selectivity or high energy efficiency, depending on the applications to which the invention applies.

With regard to narrowband radiation, the benefits of providing irradiation at certain wavelengths can be illustrated by a hypothetical example of heating irradiation. Assume that the material, in general, is transparent to electromagnetic radiation from the visible range to the middle infrared range, inclusive, requires a heating process to perform some production operation. The examples described above are intended to depict how the described application variants can be the most commonly used for real applications. The ability to generate output energy only at a specific wavelength, described in this disclosure, will significantly improve the efficiency of various applications of the heating process, for example, for heating, preserving or drying food objects.

The present invention relates directly to a new approach to ensuring the direct production of significant amounts of radiation at selected wavelengths in order to replace such analogue heating devices of a broadband type, for example, for food processing.

It should also be noted that the latest advances in the technology of semiconductor processing led to the emergence of solid-state emitters on the basis of direct electron-photon transformation, which usually operate in the near infrared and medium

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infrared ranges. Some of these solid-state devices work in the same way as ordinary light-emitting diode (LEDs), but they do not emit visible light, but emit true heat energy on longer waves, near infrared and the second infrared range. Some of the first ones that have become available are an entirely new class of devices, which uses the technology of quantum dots, which broke through the barriers that prevented the creation of useful, economical solid-state devices that are able to act on the basis of direct electron-photon transformation having a pseudo-monochromatic output, which lies in the middle infra-red range of waves.

To distinguish this new class of devices from traditional short-wave devices (LEDs), these devices are more appropriately described as radiation or infrared diodes (IRs). Devices have the property to radiate the radiant energy of electromagnetic radiation in a strictly limited range of wavelengths. In addition, by properly performing operations onprocessing of semiconductors, ICHD can be configured for the radiation of specific longwaves, which are the most preferred for a particular application of beam processing thanks tocoordination with the absorption spectrum of the object.

In addition, there were innovations in the technology of ICE associated with the formation of doped planarareas contacting the opposite doped region, formed in the form of arbitrary distributed matrix of small areas of material or quantum dots for generating photons in the desired IR range and, possibly, beyond its limits . This method of manufacturing, or other, for example, the development of new semiconductor compounds, in the case of adequate use, will provide pseudodomonochromic solid state emitters in the medium-infrared range suitable for the present invention. Alternate semiconductor technologies can also become available in the medium infrared range, as well as in the longwave infrared range, providing appropriate building blocks for practical application of the invention.

Direct transformations of the energy of electrons (or electric current) into photon energy, applications considered in the described variants, occur in a narrow rangelength of the wave, often referred to as pseudo-monochromatic, according to its own forbiddenzone and the geometry of the quantum dot of this manufactured diode emitter. It is assumed that the width of the half-power of the possible emitters of the ICH will be within the range of 20-500 nanometers. The narrow band of infrared emitters of this type should support different application of irradiation at certain wavelengths mentioned in this disclosure. One family of devices and technologies of ICE, which is the subject of a separate patent application, US Patent Application Serial No. 60 / 628,330 filed on November 16, 2004, entitled "Oiyapit βοί Zethisopbiosiog Oeuise" ("

According to this application, "Oyapit Uyo Zetiospibisio Oeuise" ("Quantum dots of semiconductor devices") semiconductor devices are known in the art. They canapplied in photocells that convert the electromagnetic radiation of the electrician. These devices can also be used as light emitting diodes (LEDs), which convert electrical energy into electromagnetic radiation (for example, light). For most of the semiconductor applications, the task is to provide the desiredblock zone (in electron volts) or the desired wavelength (in microns), and the semiconductor is prepared so that it meets the desired range of the bandgap or the range of longwaves.

The ability to reach a specific wavelength of radiation or energy in electron volts is not trivial. Indeed, the semiconductor is limited by the choice of specific materials, theirenergy cracks, their constant grating and their inherent ability of radiation. One method used to correct the semiconductor device, is using double or triple joints. Varied characteristics of the device can build technologically useful devices.

The design of the semiconductor device can also be manipulated to correct the behavior of the device. In one example, a semiconductor device can include quantum dots. It is assumed that these points are carriers of the quantum trap and, thus, change the energy of the emitted photons in comparison with the bulk sample of the same semiconductor. For example, U.S. Patent No. 6,507,042 offers semiconductor devices that include a layer of quantum dots. In particular, he offers quantum dots from indium arsenide (ipAz) deposited on a layer of indium-gallium arsenide (ip_xThat₁ - _xAz) This patent discloses that the wavelength is

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Photons associated with quantum dots can be adjusted by controlling the magnitude of the harmonization of a constant lattice between quantum dots (ipAz) and the layer on which the dotted points (i.e., ip_xThat₁-_xAz) The present patent also discloses the fact that the disagreement between permanent lattices between the substrate and the ip_xThat₁-_xAz and the quantum dot of ipAz can be controlled by varying the level of the indium in the substrate of yp_xThat₁-_xAz With a decrease in the amount of indium in the substrate, scap_xThat₁-_xAz, the degree of discrepancy increases, and the wavelength associated with the emission of photons increases (that is, the energy gap decreases). In fact, this patent discovers that an increase in the amount of indium in the substrate from about 10% to about 20% can lead to an increase in the wavelength of the corresponding photon from about 1.1 μm to about 1.3 μm.

Although the technology disclosed in US Pat. No. 6,507,042 may be useful in providing devices capable of emitting or absorbing photons having a length of about 1.3 microns in length, the possibility of increasing the amount of indium in the substrate of yip_xThat₁-_xAz is limited. In other words, with an increase in the content of indium more than 20%, 30% or even 40%, the concentration of inhomogeneities or defects in the crystalline structure reaches the limit. This is especially true when the lining with yp_xThat₁-_xAz is deposited on a substrate or a waffle from gallium arsenide (SaAz). Accordingly, devices that emit or absorb photons of longer waves (having a narrower energy gap) can not be created using the technology disclosed in U.S. Patent No. 6,507,042.

Accordingly, since it is desirable to have semiconductor devices emitting or absorbing photons with a wavelength of more than 1.3 microns, the need for such a semiconductor device remains.

In the general case, the ICE provides a semiconductor device that contains a layer of ir_xThat₁-_xAz, where x is the molar fraction from about 0.64 to about 0.72 weight percent of indium, and quantum cells located on the layer ip_xThat₁-_xAz where quantum dots contain ipAz or AI_gIp- | -_gAz, where ζ is a molar fraction of less than about 5 weight percent of aluminum.

It also includes a semiconductor device that contains a layer of quantum dots, ipAz containing, or AI₂yp₁-₂Az, where ζ is the molar fraction of less than about 5 weight percent of aluminum, and a coating layer that contacts at least a portion of the layer of quantum dots, where the constant lattice of the layer of quantum dots and the coating layer is more than 1.8% and less than 2.4 %

Semiconductor devices include a layer of quantum dots including quantum dots of india zereneside (ipAz) or aluminum-indium arsenide (A1₂1p₁-₂A5, where ζ is less than or equal to 0.05) on the sharyarsenide of indie-gallium (ip_xThat₁-_xAz), which can be called the base cover and so on_xThat₁-_xAz Permanent layers of a layer of points and the base layer and so on_xThat₁-_xThey are disappointed. Rotational alignment of constant grids may be at least 1.8%, in other embodiments, at least 1.9%, in other embodiments, at least 2.0%, and in other embodiments, at least 2.05%. Preferably, the dissonance may be less than 3.2, in other embodiments, less than 3.0%, in other embodiments, less than 2.5%, and in other embodiments, less than 2.2%. In one or more embodiments, a constant lattice of base coating and the like_xThat₁-_xAz is less than constant grid points.

In those applications where the points are located on the base cover and so on_xThat₁-_xAz, the molar concentration of indium (i.e., x) in this base coating layer can be about 0.55 to about 0.80, optionally, from about 0.65 to about 0.75, optionally, from about 0.66 to about 0.72, and optionally, from about 0.67 to about 0.70.

In one or more embodiments, the base coating and the like_xThat₁-_xAz is located on a layer of indium phosphide-arsenide (ipP₁-_inThe_in), which is consistent with constant lattices with a basic coating and etc._xThat₁-_xAz In one or more embodiments, the layer is primed₁-_inThe_in, on which the coating is covered and_xThat₁-_xAz, is one set of graduation (continuous or discrete) layers and₁-_inThe_in, existing between the coating and the like_xThat₁-_xAz and the lining, which serves as a support for a semiconductor. In one or more embodiments, the substrate contains indium vaflufosfid (ipr). The semiconductor may also include one or more other layers, such as layers, and so on_xThat₁-_xAz, located between the coating andetc_xThat₁-_xAz and lining.

One embodiment is shown in FIG. 3. FIG. 3, like other figures, are schematic representations and are not executed on a scale relative to the thickness of each layer or component or relative to the relative thickness or comparative distance between the layers.

Device 1000 includes a substrate 1020, an optional conductive layer 1025, a buffer structure 1030, a coating layer 1040, and a dot layer 1050. It will be apparent to those skilled in the art that the action of some semiconductor devices is based on the transformation of an electric current into electromagnetic radiation or electromagnetic radiation in

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electric current. The ability to control electromagnetic radiation orelectric current in these devices is known in the art. This disclosure does not necessarily substitute for these traditional designs, many of which are known in the technology of production or design semiconductor devices.

In one embodiment, the substrate 1020 contains indium phosphide (IpP). The thickness of the substrate 1θ2θ from Ipr can be more than 250 microns, in other applications, more than 300 microns, and in other applications, more than 350 microns. It is preferred that the thickness be less than 700 microns, in other embodiments, less than 600 microns, and in other embodiments, use less than 500 microns.

In one or more embodiments, the semiconductor device data may, optionally, include an epitaxial grown layer of indium phosphide (Ipp). The thickness of this epitaxial grown indium phosphide layer may range from about 10 nm to about 1 micron.

In one embodiment, the optional conductive layer 1025 contains arsenidindia-gallium (Ip_xThat₁-_xAz) The molar concentration of indium (i.e., x) in this layer can range from about 0.51 to about 0.55, optionally from about 0.52 to about 0.54, and, optionally, from about 0, 53 to about 0.535. In one or more embodiments, the conductive layer 1025 is adapted to a constant lattice with an IPR substrate.

The conductive layer 1025 can be alloyed to a certain extent and to the appropriate thickness to provide sufficient electrical conductivity for this device. In one or more applications, the thickness may range from about 0.05 microns to about 2 microns, optionally from about 0.1 microns to about 1 micron.

In one or more embodiments, the buffer layer 1030 contains an indium phosphide-arsenide (Ip_xThat₁-_xAz) In certain embodiments, the buffer layer 1030 comprises at least two, optionally, at least three, optionally, at least four, and, optionally, at least five layers of IPR₁-_inThe_in, and the constant lattice of each subsequent layer in the direction from the substrate 1020 is larger than before. For example, according to FIG. 4, the buffer structure 1030 includes a first buffer layer 1032, a second buffer layer 1034, and a third buffer layer 1036. The lower surface 1031 of the layerbuild structure 1030 is adjacent to the substrate 1020 and the upper planar surface 1039 of the buffer structure 1030 adjoins the barrier layer 1040. A constant lattice of the second layer 1034 is larger than in the first layer 1032, and the constant lattice of the third layer 1036 is larger than that of the second layer1034.

It will be apparent to those skilled in the art that a permanent lattice of individual layers of the bufferstructure 1030 can be increased by changing the composition of the subsequent layers. In one or several applications, the concentration of arsenic in the buffer layers of IpP₁-_inThe_in increases in each next layer. For example, the first buffer layer 1032 may include an arterial molar droplet of from about 0.10 to about 0.18 (i.e., y), the second buffer layer 1034 may include an arsenic molar amount of about 0.22 to about 0.34, and a third buffer layer 1036 may include a molar amount of arsenic about 0.34 to about 0.40.

In one or more embodiments, an increase in arsenic concentration between adjacent buffer layers (e.g., between layer 1032 and layer 1034) is less than 0.17 molar fraction. It is assumed that no defects formed between successive buffer layers, which may be due to a change in the constant gratings due to the increase in the composition of the billet, will not pose a danger to the semiconductor. Methods of using such a critical composition of gravitation are known and described in U.S. Patent No. 6,482,672, which is incorporated herein by reference.

In one or more embodiments, the thickness of the first buffer layer 1032 can range from about 0.3 to about 1 micron. In one or more embodiments, the upper buffer layer is usually thicker to guarantee a complete relaxation of the crystalline structure.

In one or more embodiments, a separate buffer layer on or near the upper limit 1039 of the buffer structure 1030 (eg, a buffer layer 1036) is formed from a constant lattice from about 5.869 A to about 5.960 A, optionally from about 5.870 A to about 5.932 A .

In one or more embodiments, a separate buffer layer on or near the lower limit 1031 of the buffer structure 1030 (e.g., a buffer layer 1032) is preferably formed in accordance with the limits of the grading method of the critical composition. In other words, since the first buffer layer (e.g., buffer layer 1032) is applied to wafer IpP,

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the amount of arsenic in the first buffer layer (e.g., layer 1032) is less than 0.17 molar.

The coating layer 1040 comprises an ip_xThat₁-_xAz In one or more embodiments, this layer is preferably adapted to permanent gratings of planar constant lattices of the upper buffer layer at or near the upper limit 1039 of the buffer structure of 1030. The term "matched on constant grids" means that the successive layers are characterized by permanent lacquers that are different from each other no more than 500 million parts (ie 0.005%).

In one or more embodiments, the coating layer 1040 may have a thickness of about 10 Angstrom to about 5 microns, optionally from about 50 nm to about 1 micron, and optionally, from about 100 nm to about 0.5 micron.

In one or more embodiments, the layer 1050 of quantum dots contains arsenidindia (ipAz). The ball 1050 preferably includes a wetting layer 1051 and a layer of quantum dots 1052. The thickness of the wetting layer 1051 may be one or two dimensions of the molecule. In one embodiment, the thickness of the points 1052 measured from the lower limit 1053 of the layer 1050 to the pico 1055 can range from about 10 nm to about 200 nm, optionally from about 20 nm to about 100 nm, and optionally from about 30 nm to about 150 nm. In addition, in one embodiment, the average diameter of the points 1052 may be greater than 10 nm, optionally greater than 40 nm, and optionally greater than 70 nm.

In one or more embodiments, a layer of 1050 quantum dots includes several layers of dots. For example, as shown in FIG. 5, the layer 1050 of quantum dots may include a first dotted layer 1052, a second dotted layer 1054, a third dotted layer 1056, and a fourth dotted layer 1058. Each layer contains an arsenide of i.sub.Az and includes wetting layers 1053,1055,1057 and 1059, respectively. Each point layer similarly includes points 1055. The characteristics of each point layer, including the wetting layer and points, are essentially similar, although they are not required to be the same.

Between all the dotted layers 1052, 1054, 1056, and 1058 there are intermediate sheath layers 1062, 1064, 1066 and 1068, respectively. These interlayer covers contain yp_xThat₁-_xAz In one or several variants of application, intermediate cover layers and others_xThat₁-_xAs are substantially similar or identical to the cover layer 1040. In other words, the intermediate coating layers are preferably aligned on a constant lattice with a barrier layer 1040, which is preferably matched to a constant lattice with an upper buffer layer 1036. In one or more wavers application, the thickness of the intermediate layers 1062, 1064, 1066, and 1068 can be from about 3 nm to about 50 nm, optionally from about 5 nm to about 30 nm, and optionally from about 10 nm to about 20 nm nm

As noted above, different layers surrounding the layer of quantum dots can be positively or negatively doped to control the passage of current. Methods for controlling the passage of current in semiconductor devices are known in the art and are described, for example, in US Pat. Nos. 6,573,527, 6,482,672 and 6,507,042, which are incorporated herein by reference. For example, in water or in several applications, areas or layers can be doped with donor impurities, for example, zinc, carbon, cadmium, beryllium, or magnesium. On the other hand, the fields or layers can be doped with acceptor impurities, for example, silicon, sulfur, tellurium, selenium, germanium or tin.

These semiconductor devices can be prepared using techniques known in the engineering. For example, in one or several variants of application, different semiconductor layers can be prepared using chemical precipitation from the gas phase usingmetallorganic compounds (OMURE). In one or more embodiments, the point layer is prepared using the self-formation method, for example, the Stransky-Krastanov mechanism (δ-K mode). This method is described in US Patent No. 6,507,042, incorporated herein by reference.

One embodiment of the use of an infrared diode (ICD) including a layer of quantum dots is shown in FIG. 6. The ICHD 1100 includes a base contact 1105, an infrared reflector 1110, a partially insulating semiconductor substrate 1115, a p-type transverse conductive layer (bsJ) 1120, a buffer layer p-type 1125, a covering layer 1130, a layer 1135 of quantum dots, a coating layer 1140, a p-type layer 1145, a p-type layer 1150, and an emitter pin 1155. The base contact 1105, the infrared reflector 1110, the partially insulating semiconductor substrate 1115, the transverse conductive layer n -type (bsb) 1120, buffer layer p-type 1125, cover layer 1130, layer 1135 quantum dots and cover layer 1140 are similar to the above-described semiconductor layers.

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The base contact 1105 may include numerous materials of high conductivity. Illustrative materials include gold, gold-zinc alloys (especially adjacent to p-regions), gold-germanium alloys or gold-nickel alloys or chromo-gold alloys (especially in the vicinity of η -regions). The thickness of the base contact 1105 can be about 0.5 to about 2.0 microns. A thin layer of titanium or chromium can be used to increase the adhesion between gold and dielectric material.

The infrared reflector 1110 comprises a reflective material and, optionally, a dielectric material. For example, silicon oxide can be used as a dielectricmaterial and gold can be applied to it as a material that reflects infrared light. The thickness of the reflector 1110 can range from about 0.5 to about 2 microns.

Lining 1115 contains ΙηΡ. The thickness of the substrate 1115 can range from about 300 to about 600 microns.

The transverse conductive layer 1120 comprises an Ip_xYeah₁-_xAv and agreed on constant gratings (that is, within 500 rpt) with a substrate with Ipr 1115. In addition, in one or more embodiments, the layer 1120 is alloyed with η-impurity. The predominant admixture is silicon, and the predominantconcentration of the impurity can range from about 1 to about 3 E19 / cm³. The thickness of the transverse conductor layer 1120 may be from about 0.5 to about 2.0 microns.

The buffer layer 1125 contains three graduation layers of IpP₁-_inOf_in by analogy with the above description. The layer 1125 is preferably doped with η-impurity. The predominant admixture is silicon, and the concentration of the impurity can range from about 0.1 to about 3 E19 / cm³.

The coating layer 1130 contains Isechia-i ^ Aδ and is consistent with constant lattices with planar constant grids (that is, within 500 rt) of the upper boundary of the buffer layer 1125 (ie, its third gradation or sublayer). In one or more embodiments, the coating layer 1130 Ιη_e.g.Oa₁-_e.g.Αδ contains a molar proportion of indium from about 0.60 to about 0.70 per cent. The thickness of the coating layer 1130 is from about 0.1 to about 2 microns.

The ball 1135 of the quantum dots contains the points ΙηΑδ, described above in connection with the principles of the given derivation. As in the previous embodiments, the intermediate layers between the point layers include the coating Ιη_e.g.Oa₁-_e.g.Αδ, similar to the covering layer 1130 (that is, agreed on constant grids). In one or more embodiments, the amount of indium in one or several successive intermediate coat layers may include less than the india than the overlay layer 1130 or the previous or lower intermediate layer.

The coating layer 1140 contains Isecia- ^ Aδ and is consistent with constant lattices (that is, within 500 rpm) with an upper boundary of the buffer layer 1125 (that is, its third gradation or subclip).

The localization layer 1145 contains an IP₁-_inA6_in and matched to constant gratings with a Isechia-i-χΑδ 1140 layer. In addition, in one or more embodiments, the layer 1145 is doped with a p-admixture. The predominant admixture is zinc, and the impurity concentration can range from about 0.1 to about 4 E19 / cm³. The thickness of the localization layer 1145 can range from about 20 nm to about 200 nm.

The contact layer 1150 contains Isecia-ι ^ Αδ and is matched to the constant gratings of balloons 1145. The contact layer 1150 is preferably doped with a p-admixture (e.g. doped with zinc). The concentration of the impurity can range from about 1 to about 4 E1 9 / cm³The thickness of the contact layer 1150 is from about 0.5 to about 2 microns. The contact layer 1150 can be removed from the entire surface, not just from the layer 1155.

Emitter pin 1155 may include any high conductivity material. In one or in several embodiments, the conductive material includes a gold / zinc alloy.

Another embodiment is shown in FIG. 7. The semiconductor device 1200 is made in the form of an infrared diode with a tunnel junction in the p-region. This design preferably provides contact for a reduced resistance and a current distribution at a reduced resistance. The semiconductor device 1200 is largely similar to the semiconductor device 1100 shown in FIG. 6. For example, contact 1205 may be similar to pin 1105, reflector 1210 may be similar to reflector 1110, lining 1215 may be similar to liner 1115, transverse conductor layer 1220 may be similar to conductor layer 1120, buffer layer 1225 may be similar to buffer layer 1125, overlay layer 1230 maybe a similar cover layer 1130, the dotted layer 1235 may be similar to the pointbody 1135, the cover layer 1240 may be similar to the cover layer 1140,

The balloon of the tunnel transition 1247 contains Isecia-ι ^ Αδ and is matched to constant lattices with the localization location 1245. The thickness of the tunnel transition layer 1247 is from about 20 to about 50 nm. The tunnel transition layer 1247 is preferably doped with a p-admixture (for example,

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zinc), and the impurity concentration can range from about 1 to about 4 E19 / cm³. The Cartoon Crossing 1250 contains Ip_xOh₁-_xZ and is matched to a constant lattice with a shaft tunnel junction 1247. The thickness of the layer of the tunnel junction 1250 is from about 20 to about 5,000 nm. The tunnel transition layer 1250 is preferably doped with a n-admixture (for example, silicon), and the impurity concentration is from about 1 to about 4 E19 / cm³.

Emitter pin 1255 may include various conductor materials, but preferably contains materials that are preferred for n-regions, for example, chromium-gold alloys, gold-germanium, or gold-nickel.

Another embodiment of the ICE is shown in FIG. 8. The semiconductor device 1300 is performed as an infrared diode by analogy with the ICE shown in FIG. 7, except that the electromagnetic radiation can flow through the substrate of the semiconductor device, at least in part because of the absence of a base reflector (for example, the absence of a reflector 1210 shown in FIG. 5). In addition, the semiconductor device 1300 shown in FIG. 6 includes an emitter contact / infrared reflector 1355 that "in full contact" covers the entire surface (or almost the entire surface) of the device.

In all other respects, device 1300 is similar to device 1200. For example, pin1305 may be similar to pin 1205, the substrate 1315 may be similar to the substrate 1215, the transverse conductor layer 1320 may be similar to the conductor layer 1220, the buffer layer 1325 may be similar to the buffer layer 1225, the overlay layer 1330 may be similar to the cover layer 1230, the point layer 1335 may be similar to the point shaker 1235, the cover layer 1340 may be similar to the cover layer 1240, and the charlocalization 1345 may be similar to the layer 1245, the layer of the tunnel the natural transition of the analogous layer of the tunnel transition 1247, the ball of the tunnel transition 1350 is similar to the balloon transition 1250.

This semiconductor technology can also be used in the manufacture of laser diodes. An illustrative laser is shown in FIG. 9. The laser 1600 includes a contact 1605 that can hold any conductive material, for example gold-chromium alloys. The thickness of the contact layer 1605 is from about 0.5 microns to about 2.0 microns.

The lining 1610 contains indium phosphide, preferably doped with a n-admixture with a concentration of about 5 to about 10 E18 / cm³. The substrate thickness 1610 is from about 250 to about 600 microns.

Optional epitaxial layer of phosphide indium 1615, preferably doped with a n-admixture with a concentration of about 0.2 4 E19 / cm³ to about 1 E19 / cm³. The thickness of the epitaxial layer 615 is from about 10 nm to about 500 nm.

Graduation IpR₁-_inThe_in The layer 1620 is similar to the IpR graduation buffer₁-_inThe_inshown in Fig. 2. The buffer 1620 is preferably doped with a n-admixture at a concentration from about 1 to about 9 E18 / cm³.

Layers 1625 and 1630 form a waveguide of 1627. The ball 1625 contains indium-gallium arsenide phosphide (IL₁-_xOh_xA5₂R_1-2) Ball 1630 similarly contains Ip₁-_xOh_xA5₂R_1-2. Both layers 1625 and 1630 are matched to permanent gratings with an upper limit of the 1620 layer. In other words, layers 1625 and 1630 contain a molar fate of gallium from about 0 to about 0.3 and the arsenic molar amount from about 0 to about 0.8. The ball 1625 has a thickness of from about 0.5 to about 2 microns and an alloyed n-mixture with a concentration of about 1 to about 9 E18 / cm³. The ball 1630 has a thickness from about 500 to about 1,500 nm and is doped with a n-admixture with a concentration of about 0.5 to about 1 E18 / cm³.

The localization layer 1635, the dotted layer 1640, and the localization layer 1645 are similar to the layers of the points of the localization, described above in connection with other applications. For example, the charlocalization 1635 is similar to the localization layer 1040, and the dotted layer 1640 is similar to the dot pool 1050 shown in FIG. 3. In one or more embodiments, the number of point layers used in the dot field of the laser device exceeds 5 point plots, optionally, exceeding 7 point layers, and optionally, in excess of 9 point layers (for example, cycles). The layers of localization 1635 and 1645 can have a thickness of about 125 to about 500 nm and are coordinated on a permanent grating with a waveguide. Shari 1635, 1640 and 1645 are preferably not doped (that is, they have their own conductivity).

Layers 1650 and 1655 form waveguide 1653. By analogy with layers 1625 and 1630, layers 1650 and 1655 contain Yip₁-_xOh_xA5₂R_1-2 and coordinated on constant grids with an upper limit of buffer 1620. Shar 1650 has a thickness from about 500 to about 1,500 nm and is doped with a p-admixture with a concentration of about 0.5 to about 1 E18 cm³. The layer 655 has a thickness from about 1 to about 2 microns and is doped with a p-admixture at a concentration of about 1 to about 9 E18 cm³.

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In one embodiment, the layer 1660 is a buffer layer, which is similar to buffer layer 1620. Thus, the molar amount of arsenic decreases with each gradation as it is removed from quantum dots. The ball 1660 is preferably doped with a p-admixture with a concentration of 1 ~ 9 E18 cm³.

The ball 1665 contains an indium phosphide (IpR). The ball 1665 has a thickness from about 200 to about 500 nm and is preferably doped with a p-admixture at a concentration from about 1 to about 4 E19 cm³.

Ball 1670 is a contact layer, similar to the other contact layers described in previous versions of the application.

In other embodiments, layers 1660, 1665 and 1670 may be similar to other configurations described in connection with other embodiments. For example, these balls may be similar to the layers 1145, 1150 and 1155 shown in FIG. 4. Alternatively, the balloon layers 1245, 1247, 1250 and 1255 shown in FIG. 5, can be replaced with layers 1660,1665 and 1670.

Those skilled in the art can offer various modifications and modifications that do not exceed the scope and nature of these applications of the device.

Of course, it is obvious that in one form, the development described here includes elements of the ICD. However, it should be understood, as mentioned above in this document, that it is possible to use various other digital semiconductor narrowband devices. For example, LEDs operating in the average IR range from 1.6 microns to 5.0 microns are known and are rapidly becoming available with increasing power but not as widely available as shortwave devices. In addition, varioussemiconductor lasers and laser diodes can be used with the necessary modifications. It was also mentioned that other advanced technologies are developing or may develop, to allow efficiently generate radiation with a narrow width of the wavelength band for the applications described herein. Any of these narrowbanddevices, in principle,

In a particular practical application, it is sometimes required to place a large number of suitable devices to provide the required amplitude of radiation. Again, in the same form, these devices are devices ICE. In most of the thermal applications of the invention, such devices are usually located in the form of a peculiar x-ray matrix of high density or several x-matrix matrices, some of which can take the form of a specialized configuration of individual ICH devices. The matrices can vary from individual devices to, typically, hundreds, thousands, or unlimited number of devices, depending on the types and sizes of devices used, the required output and wavelengths required for a particular implementation of the invention. IC devices are usually mounted on printed circuit boards that have at least the ability to dissipate the heat, and possibly and equipped with special devices for heat dissipation. Frequent-IR devices are mounted on such printed circuit boards with very high density, that is, very close to each other. You can use the latest innovations in the installation of crystals and the design of printed circuit boards to ensure maximum density, when the price is necessary for the application of high power. For example, it is preferable to use the methods used for inverted crystals. Although, for this unique class of diode devices, ICE has a high efficiency, underwater electric energy mainly converted directly to localized heat. Shortwave devices have a significantly higher efficiency than long-wave devices. Some devices working in the near infrared range of about 9XX nanometers, reach the efficiency of electro-optical transformation more than 70%. The efficiency of long-wave devices increases, but is unlikely to reach the same level as in short-wave devices. Regardless of the effectiveness of the electro-optical transformation, the heat consumed must be eliminated from the semiconductor transition to avoid overheating and burnout.Remix devices. For most dense matrices, it is preferable to use the technology of integrated circuits or inverted or surface mounting of crystals with active and passive cooling. For reasons of practicality and flexibility of placement, often used multiple printed circuit boards. The xh matrices may also comprise a mixture of ICD devices that represent at least two different selected infrared wavelengths in the range, for example, from the lower limit of the visible spectrum to 5 microns.

For most applications, ICH devices are located, preferably in the form of a matrix of different sizes, some of which, by their nature, can be three-dimensional or non-flat to better irradiate objects of certain types. This is done, at least with the following objectives:

1. To provide sufficient output power by combining the output of multiple devices.

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2. To ensure sufficient "distribution" of the output on a larger surface than that which could reasonably be illuminated by a single device.

3. To provide the functionality that the programmability of the matrix of devices ICHD can provide the application.

4. To allow the mixing of matrices in the device that switch to different wave lengths for many of the functional reasons described in this document.

5. To facilitate alignment of the "geometry" of the exit with the requirements of a specific application, which may include the preferred angles of the desired radiation.

6. To facilitate the coordination of the mounting position, the angles of radiation and economydevices with the requirements of application.

7. To facilitate the synchronization of exit with the movement of the object or for another "exit motion".

8. To supply the drive group of devices with the general control scheme.

9. For the implementation of multi-stage heating methods.

10. To facilitate the proper cooling of devices in their matrix configuration.

To configure the design, of course, you have to take a lot of solutions, but the one important solution is whether the illuminating devices will move relative to the target heating or cooking object, or the illuminating devices will be immobile, the target object will crawl. You can also offer some combination solution for optimizing design parameters. It is reasonable, for example, to have a long linear matrix of devices (or a very long unit device) that can move above, in one way or another, the target object for "irradiation of the band" when moving the source of radiation or object. It will look similar to a linear head to spray paint, which moves over the colored object. Obviously, just as a good painter will move his instrument in many different ways,

Thus, in fact, there are three general approaches to creating an irradiation configuration. One can construct large two- or three-dimensional matrices for a specific application. You can build a linear, one-dimensional matrix of the appropriate size and length for a particular application. The third approach takes advantage of the high degree of orientation of these narrowband devices in order to apply one or more point sources that are targeted and aimed at the object. The latter approach involves the use of a servo or golvanometric displaced mirror or deflector for the desired focus energy. Below this document is an example of the application of this type of radiation. Given the typical end use of diodes, they are manufactured with a minimum cost, due to the reduction of the size of the transition. Therefore, we need a smaller area of ​​semiconductor waffle, which directly correlates with the cost. Ultimate use of IR devices often requires a significant output energy of radiation due to the greater number of photons. It was theoretically proved that ICHD can be manufactured by non-standard ways of forming the reference surface of photon emission with a large area of ​​transition. Thus, it would be possible to create devices ICHD, which can provide muchmore average output of infrared radiation. In the presence of such devices, the absolute number of ICE devices required for the practical application of the present invention can be reduced. This is not a desirable or practically feasible condition, however, due to the growth of output power as the emergence of new devices, the present invention can be used with fewer devices or even a single device. It can be carried out with a single device for low-power applications, monochromatic applications, or if the IR devices can be manufactured with sufficient output power. Since ICHs can often acquire the shape of a laser diode, the additional output power of a unit device is very realistic. One manufacturer has demonstrated that at a wavelength of 975 nm, they are capable of producing high-performance, surface-emitting devices of considerable size. For example, one device that has a radiant surface of 1 mm x 25 mm can produce more than 60 optical wool of radiant power. Thousands of such devices installed on a well-cooled PCB can produce 600 watts in a very compact package,

Similarly, it is possible to produce the above matrices of devices in the form of integrated circuits. In such an implementation, the ICEs will be located within a single piece of silicon, gallium arsenide or india phosphide or other suitable substrate, but with multiple transitions, each of which plays the role of the place of the photon conversion output on the crystal. They can be similar toother packages in the form of an integrated circuit, which uses ballistic matrices

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contacts for electrical connection and installation. Such packages of devices can then be used as a matrix, which helps to provide the necessary contacts for connecting to the control system and obtaining signals from it. Again, the parameter of the design is the control of the transition temperature, the upper limit of which, with the current development of chemical technologies, is about 100 ° - 105 ° C, in case of which excess occurs damaged. It is assumed that the chemical compounds of the future will increase the thermal stability, but the heating should always remain below the critical range damage to the device used. They can be additionally placed either on printed payments alone or in aggregate, or they can be placed in the form of matrix devices more higher level, in accordance with the requirement of application or economy.

When these devices are placed in a matrix of any type, it may be desirable to mount the microlensing matrix in the immediate proximity to the narrowband irradiation of the matrix in order to deviate the radiant energy in the desired manner. For example, the matrix of devices may have a derivative discrepancy with a full angle of the cone of 35 °, whereas for an application it may be more desirable to use an angle of divergence of 10 °. Each lens or elementary lens in the microlensing matrix can correspond to the refraction of the output energy back to the angle of difference of 10 °. Multimeter semiconductor devices, such as laser diodes, usually have a so-called fast axis and a slow axis. In other words, the difference in photon output, say, in vertical direction may differ from the divergence in the horizontal direction for each device. Example, some devices have parallel rays on one axis, at the same time, with a discrepancy, say, 15 ° on the other. Although lenses or microlensing matrices allowchange the angles of discrepancy, their use leads to some energy loss, so it is bestall, if possible, to use a natural variation without correction.

When creating the best configuration for the placement of narrow-band semiconductor devices in irradiating matrices, regardless of the form factor of devices, the designer can take into account the entire range of variables and their relationship with the application, both from a commercial and from a technical point of view. Some other variables to be considered, depending on the intended application, include packaging, ease of placement, manufacturing methods, costs, electronic connectivity, understanding of the programming / control power, device geometry, output differences, cooling requirements, external placement conditions, device protection, reflected energy, sewage capacity, power supply, voltage on the chain, chain geometry, radiation requirements, safety and many other quantities known to those skilled in the art.

All the initial materials, substances and food products have the corresponding specific characteristics of absorption and transmission at different wavelengths in the electromagnetic spectrum. They are often called absorption spectra of the object. Each material also has the characteristic reflection, scattering and radiation properties in the infrared range, but we will not waste time in their consideration, but we will immediately proceed to the practical application of the present invention, although it depends to a large extent on the properties of absorption / transmission, all should be considered. The absorption percentage at any given wavelength can be measured and summed up in a table for any particular material. This can be graphically represented in a wide range of wavelengths, which will be explained in more detail and illustrated below in this document. Since each type of material has characteristic absorption or transmission properties at different wavelengths, it is very useful to know these properties of the material for the best optimization of the heat process. It should be understood that if a particular material or object has a high transmittance in a certain range of wavelengths, it would be very inefficient to try to heat this material in this wavelength range. However, realizing that for some objects it may be desirable to choose the wavelength on which the material has a high transmittance, to facilitate deep penetration into the object, while energy is not fade. On the contrary, if the material is too absorbent at a certain wavelength, then the use of heating radiation will lead to surface heating of the material. This maybe very desirable for some applications. Example, if we want to see the outer surface of the steak or fry the outer surface of the bakery. For materials or food objects with insufficient thermal conductivity, this wavelength absorbed on the surface is usually not the optimal way of heating, since it will not heat up with deep penetration or evenly in the thickness of the object material.

The fact that various materials, substances and food products have specific characteristics absorption or transmission of radiant energy at various wavelengths, many years well known in technology. However, due to the lack of powerful digital narrowband infra-red sources that can be specified at specific wavelengths or combinations

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wavelengths, previously it was not possible to fully optimize many of the existing operating heat or processing. Since it was virtually impossible to deliver infrared radiation to the product at specific wavelengths, many manufacturers did not know at what lengthswaves would be most advantageous to heat or handle their particular product.

Previously, the ability to generate infrared radiation relative to the high density of specific wavelengths or narrow bands was simply not available in the industry. Therefore, since this type of optimization of heating or processing was not available, most manufacturers or developers of different types of furnaces did not consider this possibility. It is suggested that the emergence of infrared sources radiation at a specific length of the wave will open completely new ways, processes and optimized cooking. This invention makes it possible to virtually implement such new processes and provide technology implementation, which has increased flexibility for a wide range of applications. Although it is anticipated that before the use of the present invention will be in the commercial or industrial sphere, it is also necessary to understand,

It is anticipated that these developments will be very useful alternatives to broadband gas filled, ohmic and quartz infrared heaters, or other traditional heating devices, widely used today. Such lamps are used for a number of conservation and culinary applications. They can be used not only in the alternative to the existing functionality of microwave infrared lamps or other traditional heating devices, but also to add significant additional functionality that is simply not available for modern technology.

The above-mentioned developments, on the contrary, allow the generation of radiant energy either in a continuous mode, or in digital pulsed mode. Since the main semiconductor devices of the present invention are digital and have an extremely small time response, measured in nanoseconds, it is possible to significantly improve energy efficiency, including power supply, when necessary, and disconnecting it when it is not needed. When the target component to be cooking, preserving or heating, is in the radiation zone, the device can be directed and precisely activated in strictly necessary quantities. Application of this method of digital narrowband heating eliminates the need for preheating and heating the furnace.

Additional functionality of impulse power supply in a strictly limited seamstrength of the wave of an infrared source can significantly increase overall energy efficiency compared with many traditional applications of broadband radiation heating or cooking. For example, by properly modulating the time of energy supply to any single infrared transmitter (ICD) or their matrix, you can track individual objects as they exit beyond the large matrix of infrared sources. In other words, the energy will be fed to infrared emitters that are closer to the target device. As further movement of the target component orarea, the "wave of energy supply" can pass through the matrix.

In the case of cooking or preserving the material, with the formation of a variable thickness or form in analogy with thermoforming, it would be desirable to provide more heat in the region of greater thickness or more complex form. Similarly, thermoforming, certain areas are subjected to a tougherformation compared with areas that are more moderate or completely unformed. Correct designing of the matrix configuration of infrared emitters allows not only simultaneously to supply energy to all devices, but to supply energy to a certain plan according to the shape of the heated area. For example, for production lines with continuous movement, it is most desirable to program the region of a special form of desired heating profile, which can program programmably move synchronously with the target heating area. Consider a region in the form of a frame for a picture that requires heating, shown in FIG. 10. In this case, it would be possible to have a similar matrix of devices (402) in the shapes for a picture with the desired intensity of radiation, which programmably moves bpo matrix, synchronously with the displacement of the target thermoforming sheet (401). Using a coder to track the movement of a product, for example, a thermoforming sheet (401), you can use well-known methods of electronics synchronization for the inclusion of the necessary devices with the required intensity in accordance with the instructions of the programmable controller or computer. Devices in matrices can be included in the control system for their desired output intensity in the "continuous" mode or "pulse" mode. In any mode, you can modulate the intensity as a function of time to provide the most it would be possible to have a similar matrix of devices (402) in the shapes for the picture with the desired intensity of radiation, which programmed moving bpo matrix synchronously with the displacement of the target thermoforming sheet (401). Using the encoder for tracking the movement of the product, for example, the thermoforming sheet (401), can be used well-known methods for electron synchronization to include the necessary devices with the required intensity in accordance with the instructions of the programmable controller or computer. Devices in matrices can be included in the control system for their desired output intensity in the "continuous" mode or "pulse" mode. In any mode, you can modulate the intensity as a function of time to provide the most it would be possible to have a similar matrix of devices (402) in the shapes for the picture with the desired intensity of radiation, which programmed moving bpo matrix synchronously with the displacement of the target thermoforming sheet (401). Using the encoder for tracking the movement of the product, for example, the thermoforming sheet (401), can be used well-known methods for electron synchronization to include the necessary devices with the required intensity in accordance with the instructions of the programmable controller or computer. Devices in matrices can be included in the control system for their desired output intensity in the "continuous" mode or "pulse" mode. In any mode, you can modulate the intensity as a function of time to provide the most

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Desired exit status. This department can be exposed as a group of devices, as well as individualIH devices. For a particular application, the division of management to the level of individual devices ICD may not be required. In these cases, ICE devices can be connected to the wires of the chain of the most desired geometry. These chains or groups of chains can be programmed to run in accordance with the requirements of the annex. For reasons of practicality, it is sometimes desirable to excite ICD devices in groups or chains to facilitate the supply of voltage and to reduce the cost management of individual devices.

Chains or IRI matrices can be controlled by simply feeding the current in the configuration of the open loop, or you can use more sophisticated controls. Fact-intensive evaluation of any particular application requires the proper volume and level of controlbandband infrared radiation. As far as complex or control is needed, the control circuit can continuously monitor and modulate the input current, voltage or specific output. Monitoring of the most desired output or result radiation can be realized by directly measuring the output of the infrared matrix, or, alternatively, some parameter associated with the target object of the red radiation. This can be done with the help of a continuum of various technologies from the use of simple thermocouples or pyrometers to much more sophisticated technologies that can take shape, for example, infrared cameras. A specialist in this area of ​​technology may also recommend a specific method for monitoring the closed cycle, which is economically feasible and justified for the specific application of the invention.

Direct and indirect monitoring methods can be used. For example, if a particularmaterial is heated to achieve the temperature range of formation, it may be desirable to measure the force required for the formation of material, and use these data inas a part of the feedback to modulate the infrared radiation matrices. There are many other means of direct or indirect feedback to facilitate the optimization and management of the output of the present invention.

Consider the application of the present invention to the preliminary processing or preparation of food. Of course, in the history of mankind, a very wide range of different types of stoves and heating systems in the preparation of food was used. As most of them are well known, the description of all such furnaces and heating systems goes beyond the scope of this patent application. With a rare exception of the microwave coil, where the culinary technology of non-infra-red / non-thermal sources is used, virtually all other culinary technologies use broadband heat sources of different types. Sources and elements of infrared heating, which are used in such furnaces, are broadband sources. They have no ability to generate infrared energy at specific wavelengths that could provide the greatest advantage in a particular culinary situation or for a particular product,

Another commonly used infra-red heat source in furnaces is a quartz or quartz halogen lamp. She, of course, can take a variety of forms, and oftenmore used in the form of straight or circular tubes. The filament in the lamplike type is inside a tubular element made of quartz glass. Quartz lamps and quartz infrared lamps are well known in industrial and consumer products and there are numerous varieties of the basic concept. Some forms change the central length of the wave in the original curve to move it closer to the spectrum of visible light or to the near infrared spectrum, or in some cases even to the medium infrared spectrum. However, in any case, radiation sources based on a quartz lamp are broadband sources. Their full width half the maximum output alwaysmore than 2500 nm. Many get a significant output far beyond the 4000 nm range. In order to contrast them with the present invention, this is obviously a broadband source, like all other thermal sources that are used or have been proposed for use in different types of cabinets.

It is common knowledge that there are three general heating modes used in furnaces and cooking utensils. This is the thermal conductivity, convection, and the transfer of radiant energy. Often they are used jointly, but now it's going to be about heat conduction. The heating by means of the thermal conductivity involves the direct transfer of heat due to the contact between the two environments. The most common example of thermal conductivity used in cooking, frying. In other words, the immersion of the heated or cooked object into a hot or boiling liquid, such as water or oil. The main reason why the liquid is used when choosing a conductivity as a method of heating is that the liquid has a lot to heighten a good conduction bandwidth than air or gases. In the end, the temperature of the object being prepared

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used to transfer heat into an object. As a result, to achieve some favorablecurrency results using exclusively heat conductivity as a heating medium is often more difficult and impractical.

Convection is used in most home, commercial or industrial furnaces, which are heated by gas or electric ohmic heating elements. These are very broadband heat sources that hold air or gases inside the oven. Hot aircontacts with the object or food. Thermal conductivity actually takes place on the verge of contact with hotair or gases. When the outer surface of the target object, subject to heating orprepare, comes into contact with the gaseous fluid medium, there is an phenomenoncontinued, aimed at achieving the thermal equilibrium of the object with a fluidenvironment. In the case of cooking, radiant energy emitted by fog heating elements, usually shielded from food and therefore does not directly affect. The years of industrial testing have shown that the energy of long-wavelength broadband infrared radiation emitted by osmotic heating elements, will quickly absorb on the outer surface of food. This will lead to the burning or roasting of the surface long before the inside of the food facility becomes deeper cooking.

In general, long-term studies conducted in the food industry, have shown that the greater the wavelength of radiation, the less depth it will penetrate into the foodproduct. This is an unpleasant generalization, but it was fair when the furnace was made with broadband sources.

According to what was indicated for other materials, products of plant and animal origin have specific spectral absorption curves. These specific absorption curves indicate the ability of a particular food product to absorb and transmit specific wavelengths. Choosing a specific wavelength or several carefully selectedlength waves for irradiation of this food object, you can modify or optimize the desired characteristics of cooking. The most effective use of energy radiation can reduce the cost of heating or cooking.

For example, if it is most desirable to heat or fry the outer surface of a particular food product, the present invention allows one to choose the wavelength at which this particular food product has a high absorption. As a result, when irradiated in the selected narrow band of wavelengths, the energy of the infrared radiation will completely absorb very close to the surface, thus resulting in the desired effect of heating and roasting directly on the surface. On the contrary, if it is desirable not to overheat the surface, but, conversely, to cook food at a great depth within it, you can choose the wavelength or combination of selected wavelengths, on which the particular food has a significantly higher permeability, to achieve the desired culinary result. Thus, radiant energy absorbs gradually as it penetrates to the desired depth.

It is important to note that for electromagnetic waves propagating in non-metallicmaterial, the intensity of this wave 1 (1) decreases as a function of the distance traveled and according tothe following equation:

And (1) = I0 (e-ai)

In this equation, 10 is the initial beam intensity, and α is the specific absorption coefficient of the material. With increasing time I, the intensity of the beam undergoes exponential decay, caused by the absorption of radiant energy of the initial beam material, in which it expands. For this reason, the use of heating with infrared radiation to achieve optimal culinary results implies a complex relationship between the thickness of food objects, the intensity of infrared irradiation, the wavelength radiation and the coefficient (s) of absorption of material (s).

By mixing the elements of IRD, emitting at different wavelengths, you can additionally optimize the culinary result. In such a polychromatic matrix, one type of element will be selected at the wavelength, characterized by a low absorption of radiantenergy, which provides deep penetration of heat. The second type of element will be chosen to ensure high absorption of radiant energy, which contributes to surface heating. By completing the construction of the matrix, you can choose the third type of element of the ICE at the wavelength, which is characterized by intermediate absorption. By regulating the relative output level radiation of 3 types of emitters of ICDs contained in such a matrix, one can optimize the important properties of prepared food objects.

By connecting color sensors, temperature and, possibly, visual sensors to the control system, you can lock the loop and further optimize the desired cooking results. In such

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circumstances, it is possible to control the desired parameter, and the control system can respond, creating irradiation with the most desired wavelengths, intensity anddirection. Using and embedding a visual sensor, you can actually observe the provisions and sizes of prepared foods, and then optimize the output of stoves in accordance with the above description. When used in conjunction with the humidity sensor, the system can react with a combination that supports the desired moisture content. This allows us to understand how this invention, together with the necessary sensors and controlling "intelligence," will be able to provide in the future an intelligent furnace. Of course, the present invention can be combined with conventional culinary technologies, including convection ovens and microwave ovens, in order to obtain the best combination of useful properties of these technologies.

You can also choose wavelengths that can absorb one food, and not so much absorb the second food, to ensure a high selectivity with respect to the amount of heating that is present in the mixed dish. Thus, one can understand that changing the combinations and changes and the intensity of different selected wavelengths, you can achieve a wide range of clinical results with the correct selection of supplied energy.

In any application of the present invention, various devices can be used to focus or direct the beam to achieve the desired direction of irradiation energy. This can be done using a variety of implementations - from individual focusing of the ICD devices to the mounting of microlensing matrices near the devices. Directional devices of the beam should be chosen correctly so that they work at the wavelength of the sewage radiation from the direction being sent. Using the well-known methods of diffraction, refraction and reflection, one can direct energy from different parts of the matrix of ICD devices in the desired directions. Programming the control of specific included devices and modulating their intensity, you can achieve selectivity of radiation in a wide range.

Although this disclosure deals with the use of radiant energy, mainly in the range from 1.0 to 3.5 microns, it will be apparent to a person skilled in the art that similar effects of material heating can be achieved at other working wavelengths, including longer wavelengths in the infrared range or shorter waves in the visible range. For example, some types of edible objects are well prepared at a wavelength of 972 nm or in the range of 9kk. Some foodobjects can be well prepared in all or different ranges of the entire visible spectrum. Yes, the narrowband devices are provided at such wavelengths for such applications, and, in a number of cases, provide a deep penetration of energy into the food object. In addition, it is obvious that this invention includes the implementation of semiconductor narrowband irradiating and emitting devices, emitting energy, for example, in the range from 700 nm to 1200 nm, and in the range from 1200 nm to 3500 nm, and in the wavelength range of more than 3500 nm. In addition, the time of supplying energy at two wavelengths in accordance with the characteristics of absorption of targetfood objects, in one form, one of the wavelengths greater than 1400 nm, and the other less than 1400 nm. In addition, when using two wavelengths, in one form, the centers of the selected rangeslength of the wave are one on top of, at least, 150 nm. The essence of the disclosed invention includes the use of solid-state emitters on the basis of direct electron-photon transformation for radiation heating, which emitters can operate in a wide spectrum from the visible range to the far infrared range. For certain types of applications, it may be desirable to include other devices in the scope of the invention,

In at least one form, this system uses as a heating source or preparing a digital semiconductor narrowband illuminating device. Accordingly, the invention provides direct injection of thermal infra-red (IR) radiation or energy into a narrow band of wavelength into target food objects with diverse purposes, namely cooking, heating, drying, roasting, dehydration or processing. As will be described below, these goals may include heating, raising or maintaining the temperature of the target object or specifically stimulating the target object in various industrial, medical, consumer or commercial conditions. The methods described here and the system especially apply to operations, which require or take advantage of the ability to radiation at specific selected wavelengths or to stroke or injection radiation. Knowing the absorption coefficient of the object at each wavelength, often called its absorption curve, it is important to fully optimize the practical application

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of the present invention in order to be able to optionally choose narrow wavelength bands for heating. The invention may also have particular advantages when it is desirable to handle the object at a high speed and not to be in contact with it. The invention provides a system of infra-red heating in the selected narrow band of wavelengths, which provides high programmability for a wide range of end-uses. The invention offers a new type of infrared irradiation system, formed by separate devices or projected matrices, which are arranged, most appropriately, from digital semiconductor narrowband emitting devices. At least one embodiment of such an emitting device will be specifically described later in this document, but, as will be shown below, for the practical application of the present invention, depending on the application,

As described above, in a traditional toaster, cooking stove or in a general-purpose furnace, ohmic heating elements or gas heating elements are usually used for converting electrical energy or petrochemical products, respectively, into various forms of heat energy. On the contrary, the present invention uses digital devices based on semiconductor diodes (or similar devices) acting on a totally different principle - they generate energy in a certain narrow band of wave length. In at least one form, they use the process of electron-photon conversion using semiconductor technology of quantum shield or quantum dots for generating photons, which are also referred to as electromagnetic radiation energy. They are also digital devices and internally directional or targeted devices. Semiconductor illuminating devices by their nature relate to devices such as "instantaneous switching" and "instantaneous shutdown", which, in contrast to the like heating elements, do not have heating time. They can usually be turned on and off for nanoseconds.

Traditional heating elements act as classical black-colored Emitters of a Shawl that can create broadband radiation or a wide range of wavelengths. Formulas for calculating the wavelength of a central peak and outputs at corresponding lengths of waves, commonly known from classical textbooks on physics, so we will not consider them here. Semiconductor diodes or Laser diodes, for example, operate completely differently. They do not obey the physical Planck law for a black body and in their nature have the ability to create a narrowband spectrum or a narrow range of wavelengths. This is due to the fact that they are devices of direct electron-photon transformation, which obey the laws of quantum physics according to their specific design, instead of producing photons depending on the degree of their heating.

In order to further explain and focus on some of the main provisions of materials science, all materials have unique and characteristic "molecular spectral absorption". These spectral absorption are usually so unique to a specific type ofmaterial that its "spectral signature" can be used for positive identification of the material, even if the size of the sample is so small that it can not be identified by other features. Full "spectral signature of absorption" is a collection of absorption measurements at each wavelength from UV to a far infrared range and indicates the exact value of molecular absorbency, which characterizes the material at each wavelength of radiation. Absorption spectra of the material indicate which wavelength of the material to one or another degree of probability absorbs radiant energy, or vice versa, transmits radiant energy. In other words, the contrast of highspectral absorption is high spectral bandwidth. In addition, if the concrete object material to be prepared, has a high spectral absorption at a specific wavelength, it has, respectively, low transmission at the same wavelength. Footsteps, just because it has a high transmission at a specific wavelength, it must have a low absorptionat the same wavelength. The magnitude of the absorbing power, which is the substance at a specific wavelength, is the measure of its absorption coefficient. Since absorption, in the general case, is expressed in units of absorption or in the absorption of millimeter from 0 to 100 percent, the absorption coefficient will be somewhere within these limits for eachlength of the radiation wave. Although it may be expressed in other units, it is wise to accept as the standard of its expression, as the percentage of absorption by millimeter or in logarithmic absorption rates. Charts of absorption spectra for three different materials are shown in FIG. 11.

You can choose the depth and extent of heating, which is achieved through the use of these ultrasound sources of irradiation in the process, furnace or culinary adaptation, post-selection choice of bandwidth and wavelength in accordance with the characteristics of absorptionobject. The present invention allows one more method that can provide

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additional depth of penetration of the process or preparation. The above discussion concerned the implementation of digital narrowband semiconductor devices in a continuously activated form, which, as a result, they are included and operate at a certain level up to their continuous output output and then disconnected after the end of a period of time. You can also use devices in pulsed mode. There are a number of structural considerations why they can be exploited in this mode, including considerations regarding power supply, considerations regarding cooling and so on. One of the other things worth discussing here is their operation in pulsed mode, resulting in a pulse of the electric current often exceeds the stationary current, which allows for instantaneous pulse radiation of substantially higher intensity. With an instantaneous momentum of higher intensity, it is possible to penetrate much further into the target object than to allow a stationary output of lower intensity. Using this method, you can penetrate much deeper into the foodproduct that is being prepared, despite the fact that the total energy per unit time can be even less. This may be cost-effective, since low-power devices with less power supply can provide practically the same depth of penetration as a larger and more expensive system, but with lower production costs. Products such as bread and potatoes, ideally, require multiple a deep penetration of radiant energy for fast and, at the same time, proper cooking. This is an important additional tool available to the product designer, implementing the technology of the given input,

Because of the characteristic absorption signatures, a broadband emitter or broadband emitter typically generates a significant amount of energy that is not ideal for this application (eg, drying), and most of this energy does not recognize the desired or desired absorption due to incorrect wavelengths. Generating energy at a specific wavelength or in a narrow range of wavelengths, for example, with the help of diode or laser diode sources, you can create a much more efficient cluster device or system for use with known objects.

The present invention permits spatial control of heat distribution. In this regard, ohmicheating elements are usually multi-directional emitters, in the sense that allsurface element emits the energy of electromagnetic radiation in the wideband when passing through the electric current. This means that only a relatively small part of the radiant energy is actually directed to the target material, which is subject to heating, drying, preservation or preparation. Diodes or laser diodes, on the other hand, are easier to target or direct to supply energy to a very limited area of ​​the targetmaterial. As will be considered for several common types, they are mostly sent to their patterns of exposure. Diodes and laser diodes must be targeted and directed so that their emission of radiation, directly or through reflections or refractions, fell to the heated object. In addition, carefully selecting several specific narrow bandwidths and actively regulating the time and duration of each actradiation, it is possible to predict and control the depth of penetration of the radiant energy, while the broadband emitter is not at the disposal of this type of control. They, in essence, are omni-directional emitters, in the construction of which need to add reflectors or reflective coatings to ensure any orientation in their implementation. while the broadband emitter does not have this type of control. They, in essence, are omni-directional emitters, in the construction of which need to add reflectors or reflective coatings to ensure any orientation in their implementation. while the broadband emitter does not have this type of control. They, in essence, are omni-directional emitters, in the construction of which need to add reflectors or reflective coatings to ensure any orientation in their implementation.

To further expand the understanding of these principles, it is necessary to assimilate some of the basic facts regarding semiconductor illuminating devices. They are available in a number of different form factors, any of which may be suitable for any implementation of the present invention. Narrowband iridescent diodes, commonly referred to as light-emitting diodes (LEDs) or called infrared diodes (ICDs), when they generate radiant energy substantially outside the visible range, often give an output with a bandwidth (full width at half the maximum) of 15 to 250 nm. Output power of these devices has greatly increased over the past 10 years, and is expected to continue significant growth in the near future. Already does not seem to be an unusual opportunity to purchase a production SVD or ICE, the optical output of which substantially exceeds 1 watts. The shape of the initial beam of these devices depends on their specific design, but, more often, there is an arbitrary Gaussian distribution in the range from 10 ° to 150 °. Of course, the shape of the output beam can be additionally changed with the use of various optical devices. The specific pattern of discrepancy of the source beam should be chosen so that it was, in essence, the best for the particular application, which will use diode devices.

Although it is anticipated that the semiconductor illumination devices will be closer to the ideal for the purpose of implementing the present invention, there is no fundamental reason why it is impossible

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use other types of laser devices. However, although laser devices may qualify as narrowband at a certain level, there are other commercial and technical considerations that can restrict their practical use. For example, chemical lasers and different types of pumped lasers are usually much more expensive. Many non-semiconductor types of lasers are only available in limited wavelength selections, which may be less desirable when trying to reconcile the wavelength of irradiation with the absorption characteristic of a particular material or group of materials. In addition, given the intrinsic nature of the reduced efficiency of the pumped lasers, they are probably not as suitable for use as semiconductor lasers. If, however, new types will be developed that will overcome this limit, or if they will have a wavelength,

Some other important narrow-band illuminating devices that have just undergone a laboratory test but are ideal for the practical application of the present invention are SVT and transistor photonic amplifiers. Although light-emitting transistors (or SVTs) are new types of semiconductor devices that have just undergone laboratory tests, they provide high expectations as ideal devices suitable for practical application of the present invention. They have a good prospect for creating or significantly enhancing narrowband exposure in an efficient, manageable, powerful, and possibly even programmed way. Perhaps they will become a powerful narrowband radiation source, whose wavelengths can be even programmed to control. Previous evidence suggests that that SVT will be able to increase the power of light with a coefficient about 10 in the ninth degree. This, combined with the high efficiency and longitudinal adjustment of the wires, will make it an ideal narrowband device for the practical use of this product.

Laser diodes have always had the highest output power from available narrowbanddevices, although in the future SVT will be able to compete with them. Laser diodes usually have a bandwidth (full width at half the maximum) from 20 nm to less than 1 nm. They can work at wavelengths from UV to far infrared. Incritical dipped infrared and medium infrared ranges of wavelengths radiation, they can be made with the ability to work in any particular seamstress wavelength at will. The effectiveness of the electro-optical transformation of devices grows in a year. The effectiveness of the electro-optical transformation can be defined as the ratio of the input electric power to the photon output power. In recent years, she has become very high and is likely to continue to grow. Example, laser diode with a working wavelength of 975 nm, made on the basis of gallium arsenide, have the efficiency of electro-optical transformation of more than 72%. Usually, long-wavelength devices, for example, a wavelength of 1500 nm, for fundamental physical reasons, can not achieve such high efficiency of electro-optical transformation as shortwave devices, but it is expected that their efficiency will soon approach 45%. The chemical composition of the substrate, on which the diode devices are manufactured, is a major factor in the limiting service life of the device. For example, in diodes with a working wavelength, less than about 1150 nm, as a wafer substrate material, gallium arsenide is commonly used. Manufacturers of these devices are struggling to extend the life of more than 12,000 hours for more powerful applications. Whenproduction of powerful long-wavelength diode devices with wavelengths greater than 1200 nmarea commonly used lining of wafer with phosphide indium. Devices lined with phosphideindia can have a very long service life, over 100,000 hours. Therefore, for industrial or durable applications, it is often more practical to use diode or laser-diode devices based on india phosphide. Before developers, sometimes there is a choice between shorter waves that provide a fairly high optimization of radiation, and longer-lasting devices based on india phosphide. This, in general, is true for both LEDs and laser diodes. These devices are not only ideal for use in the present invention due to their durability, but also correspond to the choice of device in the average infrared wavelength range,

You can take additional actions to increase the working cycle of semiconductor diode devices. As mentioned herein, high-performance cooling is probably the most important way to ensure an extended lifespan of devices. Although, from the engineering point of view, concrete ways to achieve this goal a little, almost always need to install devices on a circuit board or heat transfer, which allows you to distribute, dissipate or divert excessive heat.

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There is another fundamental aspect of the design of laser diodes, which canimplement a large impact on the life of devices. The most common type of neglecteddrugs is due to how the energy goes out of the device. For devices based on laser diode with face radiation, they are usually mounted on one or another variety of heat dissipation or heat conductive printed circuit board so that the end of the laser diode was aligned with the edge of the mounting surface of the heat sink. If the edge of the output facet and laser diode is not exactly aligned with the edge of the mounting surface, there may be problems. There are three possible situations: the diode stands beyond the edge of the mounting surface, the diode does not reach the mounting surface, and the diode is located at an angle to the mounting surface. In any of these three situations, the energy of the photons emerging from the facet of the laser diode, falls on the mounting surface. The resultant heating leads to a gradual or sharp deterioration due to overheating of the local surfaces. Overheating of various local surfaces leads to various damage, including a catastrophic violation of the facet of the laser diode. When this happens, the diode usually starts to self-destruct. Similarly, if a laser diode is connected to an optical fiber, it is important that it be precisely aligned and does not form surfaces that can absorb energy and overheat or reflect energy back to the laser diode or laser diode. The same precautionary measures should be taken at the input and output ends of the optical fiber to avoid system failure as a result of overheating. Overheating of various local surfaces leads to various damage, including a catastrophic violation of the facet of the laser diode. When this happens, the diode usually starts to self-destruct. Similarly, if a laser diode is connected to an optical fiber, it is important that it be precisely aligned and does not form surfaces that can absorb energy and overheat or reflect energy back to the laser diode or laser diode. The same precautionary measures should be taken at the input and output ends of the optical fiber to avoid system failure as a result of overheating. Overheating of various local surfaces leads to various damage, including a catastrophic violation of the facet of the laser diode. When this happens, the diode usually starts to self-destruct. Similarly, if a laser diode is connected to an optical fiber, it is important that it be precisely aligned and does not form surfaces that can absorb energy and overheat or reflect energy back to the laser diode or laser diode. The same precautionary measures should be taken at the input and output ends of the optical fiber to avoid system failure as a result of overheating. it is important that it be precisely aligned and does not form surfaces that can absorb energy and overheat or reflect energy back to the laser diode or laser diode. The same precautionary measures should be taken at the input and output ends of the optical fiber to avoid system failure as a result of overheating. it is important that it be precisely aligned and does not form surfaces that can absorb energy and overheat or reflect energy back to the laser diode or laser diode. The same precautionary measures should be taken at the input and output ends of the optical fiber to avoid system failure as a result of overheating.

There are many uses for which laser diodes with end radiation, either directly or indirectly emitting in fiber optic light, will be the most desirable way of implementing technology. However, there is another class of devices that eliminates the possibility of the above types of failure. The device of this class can be generally called surface-emitting diode or laser diode. This more often refers to laserdiodes due to their inherent higher density of power, but with the growth of power diodes, it will be fair for them. Surface-emitting laser diode has such an internal configuration, the photon energy emitted does not come from a face that is internally close to any structure capable of absorbing photon energy and cause a failure due to overheating. In general, any type of device that has an internal structure capable of rejecting a beam of coherent photon radiation, due to reflection, refraction, diffraction or other mechanism, from the front or rear surface of the device, not from the lateral surface of the device, will fall under this classification. U.S. Patent Application Ser. No. 10 / 264,534 filed Oct. 3, 2002, provides one example of such an apparatus. There is shown a separate device, which can be made as a frontal emitting laser diode. U.S. Patent Application Ser. No. 11 / 042,759 shows such devices, made in the form of a chip matrix of a large number of such devices. Regardless of whether separate devices are used, or they are placed by mounting on a printed circuit board, or made in the form of matrix devices based on the integrated circuit, they serve the same purpose to eliminate the main refractive pattern characteristic of laser diodes.

Although narrow spectrum devices may be useful for cooking, perhaps in many different narrow wavelength ranges, it is important that the devices are used in accordance with the principles outlined here to achieve optimal results. Central lens of the wave of narrowband output devices is desirable, and in some applications, it is necessary to carefully coordinate with the spectral characteristics of the absorption of the object to achieve the greatest efficiency and desired results. For example, if the surface superfirmation is required, the central wavelength of the illuminating device must coincide with the wavelength on which the material or mixture of materials from which the target or food is made, has a very high absorption. On the contrary, if the desirable depth of the object, in other words, deep penetration and far below the surface, then for the output devices it is necessary to choose the wavelength, which coincides with the longer wavelength of absorption for the culinary object. Thus, the deeper it is desirable to prepare the object, the lower the absorption coefficient can be chosen, which is a characteristic of a specific wavelength. When choosing the required absorption coefficient for the predominant cooking depth, one or more desired wavelengths will be indicated from the spectral absorption curve of the object.

It is assumed that two or more wavelengths of these narrowband devices are more commonly used together. Since each narrowband bandwidth range has a characteristic absorption or transmission for each of the objects processed by the object, therefore,

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who practically apply the invention, will have to choose a mixture of wavelengths, optimal for the add-on. Using the concept of doors and windows often adds to the invention additionalfunctional capabilities. This means the use of wavelengths on which the material 'A' is very well missed, so that energy can penetrate to absorb in the material 'B' with its appropriate and carefully chosen absorption coefficient. Thus, the material 'B' can selectively heat, while informing the minimum amount of heat 'A' material. As a matter of fact, one can choose and use another wavelength to actually report the desired amount of heat of material 'A'. Obviously, this can be carried out as best as possible in the presence of significant differences in the spectral absorption curves for the corresponding materials. This, of course, you can do so for so many different materials with their respective wavelengths, as you can, respectively, schedule. It may be desirable to add additives to some materials for artificial induction of absorption peaks as needed.

The designer wishing to practically apply the present invention must take into account the following aspect. Absorption and its antipode, bandwidth, were considered above. It is also necessary to understand the properties of scattering or optical scattering of object materials. Dough for loaf, for example, measures and has a high transmittance (low absorption) at a length of 950 nm. Although this is true for thinly measured samples, it is also important to understand that the calculation of the transmittance to full absorption will be inaccurate without taking into account dispersion. The optical properties of the dough, in its raw state, cause a significant scattering of photons with a wavelength of 950 nm, and thus change the depth of penetration to absorb allenergy. This can be considered as internal "microvision reflection", which effectively changedirection of large quantities of individual photons. Since this occurs on an invisible sitelectromagnetic spectrum, it is necessary to test scattering at the desired wavelength with the help of actual experiments. Extremely low absorption coefficient guarantees that there is no surface heating at this wavelength, but laboratory measurements and tests will provide additional information necessary to determine the depth penetration, which will in fact be effective.

When some materials are heated, there is another phenomenon. Dough that rises, orother materials, the physical properties of which change as a result of the application of different periodsexposure for heating, will demonstrate the change in penetration as a function of changes in the propertiesmaterial. For example, when the dough turns into bread, gas bubbles form a habitty substance of low density, known to most of us. Changes in the density or properties of the material in conjunction with the diffusion diffusion show that to determine the penetration depth on this wavelength is best to use laboratory tests and experiments. Some materials may actually indicate that after these various changes may be deeper penetration.

Similarly, the penetration depth for untreated object material or raw food may differ from the penetration depth for the corresponding heat-treated material or cooked food. It can be understood that if the surface formed a cortical matrix, the resulting changes in the various properties of the material will also change the depth of penetration incompared with that which can be expected only based on the absorption coefficient.

If as irradiating devices are selected SVD or laser diodes, their original lengthswaves are fixed. The only exception is that the output of some solid-state devices significantlychange with the operating temperature of the device. This is to a greater extent determined by the design of a highly endowed device than by any other factor, but may be significant in some devices and insignificant in others. Therefore, they must be designed and manufactured on the basis of the fact that a food object is to be cooking, heating or preserving in an oven that will be equipped according to the present invention. All of this is a priori knowledge about the illuminating devices, on the use and about the characteristics, sizes and spectra of a particular material to be prepared, processed or preserved, must be obtained from a large ' volume of experiments and studies for the most effective practical application of the present invention. When designing a culinary appliance or oven for the use of this technology, it is necessary to conduct experiments with the types of objects to be prepared, to determine their characteristics of absorption and scattering, as well as the size, weight, desired cooking time, and most desirable culinary results. The practitioner must consider whether a single wavelength is suitable for cooking, or to achieve the desired culinary results, a mixture of several different narrow strips of wavelength will be required. If you need to simultaneously submit several different products, then for optimal results often have to select a few narrow bandwidths. If several cooking products share the same signs of absorption,

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on the absorption curve, it is advisable to choose a narrow range of wavelengths, suitable for the preparation of several products. If one has a high absorption at the same wavelength, the other has a high transmittance, then it is necessary to choose the appropriate illuminating devices.

Along with the choice of wavelengths, it is also important to understand how the energy is delivered to the object. Since the narrow band light irradiation devices recommended above facilitate easier targeting, it is important that the practitioner of the present invention understands various means of "direct" energy to the product. The output is the energy of radiation that can focus along similar lines to the light visible manipulation using lens, reflective, refracting devices, optical fibers, prisms and other similar devices that are suitable for use at the selected wavelength. The above devices can be used in fixed focal length configurations if this is a good solution for the application. In some applications it may also be preferable to use narrowband emitting devices designed to create energy ranges, which diverge when the energy range reaches the target food facility. This can lead to an improvement in the coverage of the irradiated object or surface. In addition, in appropriate circumstances, the delivery of the narrow energy ranges may also include the delivery of narrow power ranges of the broadband device provided by the filter to provide narrow ranges suitable for the implementation of the present invention.

Since many of the applications that will be implemented in accordance with the present invention will be configured to generate a relatively high density of energy through narrowband devices, security is an important consideration and is somewhat different from that used for loose or analogue cooking systems. Although it is anticipated that allbandband irradiation can be realized in the visible spectrum for practical application of the present invention, it is usually invisible radiation or the use of invisible radiation somewhere in the infrared spectrum. If the radiation is invisible, then the reactions of normal blinking, turning and narrowing of the rainbow eye are not affected. It is impossible to see the intense radiation that is present in the coil zone. Infrared radiation with wavelengths of less than about 1300 nmcan penetrate the cornea and reach the retina of the eye. On top of this wavelength, in general case, it is believed that radiation can not penetrate the retina. This region is about 220 watts above the wavelength, sometimes called the area safe for the eyes, because such radiation is not able to damage the retina. Longer waves with sufficient intensity, focus, or energy density can deliver sufficient energy near the surface of the ocean to cause burns. Although the eye is the organ that is most vulnerable to infrared radiation, a long enough action can cause damage in any other place. Therefore, it is recommended to protect or in any way isolate the area of ​​the culinary chamber to protect people and animals from direct or reflected radiation. Ideally, it would be perfectly to protect the cooker so that when the doors or access panel is opened, the irradiation is immediately disconnected. Since most consumers prefer to be able to observe their food during cooking, most ovens of good quality assume this or another form of indoor lighting. If there is a window or a viewing hole for visual access to the culinary area, it must provide one or another form of filtration so that the visible light of permissible intensity is the only radiation that reaches the observer. Of course, there are many ways to implement this feature, but this is an important moment for the good and safe implementation of the present invention. Perhaps a simple form of implementation will be a filter window, which includes a visible light transmittance filter. In another example, it is possible to develop a reflecting observation channel for the relevant situations, so that only visible light will be reflected through the observation channel to the eye of the observer. The camera and display can also be used alternatively to monitor the interior space of the culinary camera. Regardless of what method is used to create a channel that traps visible light to an observer, a good idea is to use a metal or other type of door, which will be difficult to overheat the radiation to block the channel when no observation is carried out. It is very reasonable to open the door with a viewing hole, which, being open, not only disable irradiation, but also include an internal lighting system. so that only the visible light will be reflected through the observation channel to the eye of the observer. The camera and display can also be used alternatively to monitor the interior space of the culinary camera. Regardless of what method is used to create a channel that traps visible light to an observer, a good idea is to use a metal or other type of door, which will be difficult to overheat the radiation to block the channel when no observation is carried out. It is very reasonable to open the door with a viewing hole, which, being open, not only disable irradiation, but also include an internal lighting system. so that only the visible light will be reflected through the observation channel to the eye of the observer. The camera and display can also be used alternatively to monitor the interior space of the culinary camera. Regardless of what method is used to create a channel that traps visible light to an observer, a good idea is to use a metal or other type of door, which will be difficult to overheat the radiation to block the channel when no observation is carried out. It is very reasonable to open the door with a viewing hole, which, being open, not only disable irradiation, but also include an internal lighting system. what method is used to create a channel that conducts visible light to the observer, a good idea is to use a metal or other type of door that will not easily overheat the radiation to block the channel when no observation is carried out. It is very reasonable to open the door with a viewing hole, which, being open, not only disable irradiation, but also include an internal lighting system. what method is used to create a channel that conducts visible light to the observer, a good idea is to use a metal or other type of door that will not easily overheat the radiation to block the channel when no observation is carried out. It is very reasonable to open the door with a viewing hole, which, being open, not only disable irradiation, but also include an internal lighting system.

In addition, you can dynamically adjust energy, in the first place, obtaining data from the food object. The partial list of interesting data includes the size, shape, amount, type of food, thickness, absorption spectra, as well as the orientation and position of the object. If the food or target object passes through or through the irradiation unit, you can continuously submit

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information about the speed or relative movement of the vehicle. The control system receives an indication when the data or object information must be broadcast in the instruction and the command for management exposure. Ideally, it is able to receive sensor data, as described above, and coordinate / regulate the irradiation process. Based on the information that exactly occurs in the furnace, from the user's input and / or introduction of the sensor, can execute the algorithms for the correct targeting of the object and its radiation. Obviously, the corresponding user interface can take different forms and allow the user to enter different settings or other parameters that can be received by the management system. Thanks to the powerful management system that plays the role of the organizer, you can use different devices to target the illuminating elements needed to irradiate the object. For example, you can mount a serched or galvanometric-displaced mirror, which redirects by reflecting the energy of one or several laser diodes on the object.

The above described object measurement can be done using various ready-made components. Temperature sensors, infrared sensors or sensor matrices, humidity sensors, sensors, pressure sensors, color sensors, weight sensors, observation sensors, color or black and white cameras, infrared cameras, spectral photometric sensors, and others known to a person skilled in the art in the field, which is capable of practically applying the present invention, can be used to assemble these sensors in relation to heated objects, canned or cooked. Undoubtedly, a combination of different types of intellectual cameras of visible light or infrared cameras is possible. An intelligent visible light camera or other intelligent camera based system will have more flexibility and programmability than more traditional sensors. Being properly programmed, she will be able to actually check the readiness of the food or other target object in its appearance. The camera can also be used as a device for dynamic regulation, optimization and adjustment of the closed cycle of the culinary process during its execution. Similarly, an infrared camera can be used to actually determine the exact heat content of the object or food items in the furnace.

One implementation of a possible culinary technology is illustrated in FIG. 12 and 13. As shown, the system 100 can be in two states - the "open" state of readiness (FIG 12) and the "closed" operating state (FIG 13). System 100 may receive various forms, including a stove or a toaster. In at least one form, system 100 includes a latch system for protection 102, including an upper bar 104, a lower bar 106 and a barrel position sensor 108. To change the state of the bolts, it is also possible to use drive mechanisms 110, which can take various forms. Also shown is a door 101, which, at least, in one form, is closed during the work of the system. Of course, the door (and other security features, such as the latch system) provide localization of irradiation in the system. At least one form, if the door is opened, the system will not work, for example, to generate irradiation. In the order of alternatives or improvements to the doors 101 (or the doors shown in Fig. 14 (a) - (c)), it is possible to provide other configurations and designs.

A viewing window 120 is also shown, which is selectively closed by the latch protection system102. The inspection window 120 serves to allow the cook or system operator 100 to observe an irradiation progression in the furnace, for example, in the cooking zone or irradiation (not shown) in the furnace. In some forms, it is recommended and often necessary to have a system protection 102 associated with the viewing window 120 or the scope of application, that is, the use of narrowband illuminating devices as a way of their work. System 102 protects the eyes from possible damage by radiation emitted from devices. Depending on the length of the wavelength used for this application, the power required for efficient use and applications may be such that, that the direct or indirect exposure to the eyes or other parts of the body can lead to damage to the outer honeycombs or the retina of the eye. The security system 102 provides not only an operational protection device, but also a safety system in the event of a malfunction or incorrect use of the equipment.

The viewing window 120, in the same form, is arranged so that it is always closed, limiting the irradiation when narrowband illuminating devices actively generate radiation. Uscheme may include secure interlocking, which prevents the opening of doors and, at the same time, the activation of narrowband devices. The sensors, such as sensor 108, check the position of the bolt to activate the illuminating devices. These latch monitoring sensors track the position or condition of the barrows of the inspection window and, thus, the state of localization of irradiation in the system during the entire working time.

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The control button 130 is also shown. The control button 130 may receive various forms. However, in one such form, it is operatively linked to the control system (not shown) for controlling the observation camera 150 and illuminating devices (not shown) that are used for cooking in this system.

Traditional toasters operate on the basis of a very general measurement of the external temperature (convection) for emitting toast and stopping the drying process based on the user's setup (usually a control knob with positions 1-5). The exact "readiness" of the toast depends on the accuracy of the installation of this pen, the repetition of the adjustment of such general control and the state of the bimetallic plate (age, wear, external temperature of the beginning of drying, and so on). On the other hand, diode sources can be controlled over nanoseconds (if necessary) and they can be tuned to the radiation of the agreed amount of radiant energy, regardless of external conditions. With a little more complex controls, for example, control buttons 130 (and its related management system), toast or other food items'

Although this is not shown specifically in FIG. 12 and 13 (but shown in Figure 14), the control system of the given system provides superiority in the work and cooking. It is obvious that system management (and other relevant components of the system) can accept different configurations. It can use various software procedures and hardware configurations to respond to the problems facing the systems and methods described. Various memory processorsand devices can be used to perform procedures and perform functions toprovide the applications described here.

Because of the semiconductor nature of the invention, the control system optically determines the object's preparation, by means of (for example) a surveillance camera 150 and regulates solid-state radiation devices with respect to at least one of the chronology, intensity, power and completeness. Due to the inclusion of such a management system, which closes the circular direction in relation to the actual culinary results, the implementer of this technology receives a purely functional advantage. Below are some examples of how to enable this administration.

The intelligent control system also provides many other features. It can implement a wired or wireless communication with interconnected systems or non-independent systems. Such a system can communicate, for example, with the systemautomatizing the whole home. This not only provides a wide range of programmability, but new range of monitoring. For example, it is possible to provide a wire or wireless line of communication from the camera, cameras or other sensors used to monitor food preparation to make this image or information available to other displays located near or away from the furnace. A television or computer monitor that is in the kitchen can display an image that shows the course of cooking. It may include images of the lower and upper surfaces, for example Pizza cooked in the oven. It's even better than having a traditional viewport that provides multipacks for monitoring the cooking process. Often, the point of view and illumination do not allow an observer-man to watch through the window, and he often can not safely observe through the window when cooking is done with irradiation. Inner carriers can be used for a number of purposes described herein, including safe, increased, and easier monitoring of the course of cooking. It is advisable, with the help of public technology, to send images and other cookies and he often can not safely observe through a viewing window when cooking with irradiation. Inner carriers can be used for a number of purposes described herein, including safe, increased, and easier monitoring of the course of cooking. It is advisable, with the help of public technology, to send images and other cookies and he often can not safely observe through a viewing window when cooking with irradiation. Inner carriers can be used for a number of purposes described herein, including safe, increased, and easier monitoring of the course of cooking. It is advisable, with the help of public technology, to send images and other cookiesNo data with the help of VoiceIon cell phone, PDA, iRiope or similar device.

Another important subsidiary function of the control system is to ensure the power supply of illuminating devices. The power source should be a power supply ofdc current, which is a power supply with current regulation. Devices themselves are digital devices, therefore, after switching on, they will consume as much electric current as the power supply will produce. This will damage the devices if you do not limit the current to a level acceptable for devices.

The output of the radiant energy of the irradiating devices or diode arrays is mainly "aimed" or directed by emitting photons, for example, to a food object in the cooking zone or the irradiation of the system 100. In this regard, the furnace system 100 includes various structural systems to support or contain irradiating devices. The specific configuration of such a structural system depends on the application. In addition, the output of supported or contained irradiation devices can be manipulated in the same wayfocusing different sources of light. Reflectors, lenses, diffraction and refracting devices,

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beam dividers and fiber optics can serve as means of directing radiant energy, depending on the requirements of this application. Fiber optics significantly increases the flexibility of the implementation, because the fibers can literally deliver the radiation energy from one laser diode to a place of use, located at a great distance or in a completely different environment, or from the location of the laser diode. However, the disadvantage of such a design is the presence of significant losses on the collecting lens when passing from the original face of the laser diode into the fiber. Regardless of the choice of an optical method or technology, if the equipmentoptical manipulation is correctly located and combined with the creative configurations, it will effectively deliver radiant energy with proper intensity, at the right angle and the desired place.

In another form, it is possible to mix or combine the digital semiconductor narrowband technology with the present invention with more traditional culinary technology. For example, one can construct a polychromatic narrowband oven, which also includes the possibility of microwave cooking. It may be desirable to embed omic or quartz elements in the preparation of food. It may be preferable to use a microwave mixing fan as a narrowband scanning or dispersing device for implementing a number of functions. It is easy to see that you can have many different combinations and rearrangements of narrowband stove or culinary technology with other, more traditional ways to ensure the benefits of both approaches. Sometimes this is dictated by considerations of market or consumer superiority, sometimes with considerations of price,

Other variants of the system 100 involve the use of servo motors and remote control boards. The servomotor can be used to keep or co-ordinate cooking with the output energy of the device or devices to ensure optimal heating. This method is discussed below for the preparation of pizza. There are many different ways of using servo motors or linear drives to bring narrowband devices to the correct orientation for the desired exposure. On the contrary, it is possible to move with the servomotors the food itself or the object itself to ensure the correct orientation for irradiation.

It is also obvious that the control system (or a similar device or procedure) of the described illustrative systems, in at least one form, is able to change the width of the pulse radiation, to change the amplitude, change the wavelength, and provide different types of energy modulation. This modulation of energy supplied to food objects may be based on inputs or inputs through the user interface, settings or parameters of the system, or output signals of the sensors in the system.

Since the system internally works in a safer, low-voltage mode and allows for greater monitoring, it is easier to embed a remote control system, which allows the end user to enable and disable the device and program it through the Internet or telephone connection. Intrinsic digital narrowband devices, the accuracy of control and the possibility of establishing communication between devices of this type by themselves provide the possibility of wireless communication, either independently or as part of the system of the whole house.

In an additional embodiment of a possible culinary technology, a system and method for effective pizza preparation, as schematically shown in FIG. 14 (a) - (c). As shown, the system includes a transfer means (20) for transporting pizza to the cooker chamber (30) and from it. The pizza enters the cooking chamber and from it on an open conveyor belt (22) of a mesh type, which is perhaps about 98% transparent for irradiation. When it is time to submit the pizza to the cooking chamber 30 from position 23 in the queue, the control system 15 starts a linear actuator 12 that raises the door 41A, opening access to the cooking chamber 30. Control system 15 (able to act according to the description, for example, with reference to, at least in FIGS. 12, 13 and 14 (a) - (c)) may also include a user interface, which allows the user to enter settings or parameters for cooling or operation. They may include any setting or any parameter, such as cooking time, temperature, type of food, and so on. The interlocking sensor 14 indicates to the control system 15 that the door 41 is fully raised, then the control system 15 activates the motor 10 to move the conveyor belt to deliver the pizza to the culinary chamber 30. When the motor 10 moves the conveyor belt 22 supplying the pizza to the culinary chamber 30, the chamber 60 continuously creates images that are analyzed for determining the position of pizza. After the algorithms trained in the smart chamber 60 determine that the pizza 35 is in the correct position for type of food and so on. The interlocking sensor 14 indicates to the control system 15 that the door 41 is fully raised, then the control system 15 activates the motor 10 to move the conveyor belt to deliver the pizza to the culinary chamber 30. When the motor 10 moves the conveyor belt 22 supplying the pizza to the culinary chamber 30, the chamber 60 continuously creates images that are analyzed for determining the position of pizza. After the algorithms trained in the smart chamber 60 determine that the pizza 35 is in the correct position for type of food and so on. The interlocking sensor 14 indicates to the control system 15 that the door 41 is fully raised, then the control system 15 activates the motor 10 to move the conveyor belt to deliver the pizza to the culinary chamber 30. When the motor 10 moves the conveyor belt 22 supplying the pizza to the culinary chamber 30, the chamber 60 continuously creates images that are analyzed for determining the position of pizza. After the algorithms trained in the smart chamber 60 determine that the pizza 35 is in the correct position for the camera 60 continuously creates images that are analyzed for determining the position of the pizza. After the algorithms trained in the smart chamber 60 determine that the pizza 35 is in the correct position for the camera 60 continuously creates images that are analyzed for determining the position of the pizza. After the algorithms trained in the smart chamber 60 determine that the pizza 35 is in the correct position for

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a signal is sent from the camera 60 to the control system 15 indicating that the pizza is in the correct position. Control system 15 performs the next step of its program by disabling the engine 10 and thus stopping the pizza in the correct position for preparation. At this point, the control system 15 activates the closing sequence for the door 41A by actuating a linear actuator 12 that closes the door. When the sensors 16A and 16V confirm the communication with the control system 15, reliably indicating that the door 41A is completely closed, the signal to the linear actuator 12 stops, thus, locking the door in a closed position. If at any time during the cooking cycle some kind of power tries to raise the door 41A, sensors 16A and 16B continuously track its position, the signal will be sent to the control system 15, which requires the immediate disconnection of all irradiation until the situation is corrected. Thus, the system including the door ensures the safe localization of the irradiation in the system.

When the door is closed and the camera algorithms are assured that the pizza is in the correct cooking position, the control system 15 requires the camera 60 to display different aspects of the food object, for example, pizza, for example, the position of pizza and the position of the food ingredients on the upper side of the pizza. It further requires the camera to identify the types of food ingredients present on the pizza, as well as the center of gravity of the figure and the orientation of food objects located on the upper surface of the pizza. It additionally requires the camera to identify the color of each food ingredient and crust, cheese and sauce. The chamber 60 may also be an infrared camera that can determine the temperature of each of the edible ingredients previously identified. After receiving information from the camera 60 provices listed facilities control system 15, she calculates the recommended program irradiation pattern for pizza. To calculate the program of culinary irradiation, the management system 15 addresses the information stored in its memory, which was determined from experiments and studies, regarding the best ways to use narrowband radiation technology for the preparation of pizza and the surface of pizza. Alternatively, part of this input can come from the user / operator (through the corresponding interface, for example, associated with the control system 15). It may also request supporting information indicating the adjustments that may be required, taking into account the availability of lasers from the mounting position of the lasers to the specific surface to be couched. These correction factors are also deduced from studies and experiments to optimize the culinary algorithm. Since the bottom of the pizza does not contain food objects or surfaces, in addition to the main dough, the standard cookie program is determined for the lower side of the search information and thickness information originally provided by the operator. The chamber 60 indicates the pizza diameter of the control system 15 at an earlier stage, so the data is already present and available for use. The operating characteristic may be different types of gauges that measure the thickness. For example, it may be a triangulation sensor 17 or another type of sensor, which can be used to determine a different thickness. The camera 60 can also be used to determine a different thickness and other sizes if algorithms of structured light or special algorithms are used. In addition, while the pizza is on the way in the chamber 30 of the furnaces on the conveyor belt 22, the camera 60 can create a series of images, which are used in conjunction with appropriate visual control algorithms for triangulation anddefinition of three-dimensional aspects of the crust and surface of the pizza. Other data, such as humidity and humidity, from sensors 18 and 19 may enter the control system 15 for use in determining the recommended common culinary algorithms.

The culinary algorithms prepared by the control system 15 for this application (and other, including the implementation shown in FIGS. 12 and 13), ideally, can be completelyuniversal. They may include objects such as the magnitude of energy directed to each surface. The program includes the angle, intensity of irradiation, time, temporal sequence, wavelength or wavelength for use with each goal, while setting the equilibrium (thermal aging), and all the relevant details. In short, the control system 15 forms a consistent pattern of irradiation throughout the body, taking into account the recommended culinary requirements in each base position. In the end, the culinary sequencing ends, and, thus, all pizza and its surface are ready.

It is also obvious that any such procedures, methods, and methods for managing data systems (for example, shown in FIGS. 12, 13 and 14) can be implemented using various program procedures and hardware configurations. For example, they can be stored in the appropriate memory devices or memory elements and executed by the corresponding processors.

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Then the control system 15 begins to execute a pre-prepared algorithm preparing the basis. He orders the galvanometer 71 to go to his first set of angles of deviation in the pattern of irradiation of the base. These angles of deviation, established by the galvanometer, will be correct for the reflection of narrowband radiation in a specific position on the object. When the galvanometer 71 reports to the control system 15 that it has reached this position, the control system 15 activates a narrow-band laserband diode unit 72 for straining a narrowband radiation at a wavelength A, with the intensity selected by the program, for the time specified by the program. In the course of the implementation of the radiation, the control system 15 sends the next angle of deviation and time to the galvanometer 71 to this position. If the program is compiled efficiently this will be a minimum movement to the next position, so the exposure can continue to quickly focus on the next programmed position. As management system 15 imposes its fully prepared culinary program, it targets correct narrowband irradiation at the right time and with the correct intensity and at each specific point of the basis, which means that the proper preparation is a composite result after the end of the program. It resembles the "coloring" of pizza with its ingredients (sauce, cheese and surface) with regular irradiation and timing for the desired culinary results in each section and for each ingredient. Some areas of pizza may be desirable to re-"color" or in longer or shorter periods of time to achieve the expected culinary results.

While the control system 15 continues to transmit and receive the correct signals for the program execution on the upper surface of the pizza, there is a similar irradiation of the lower pizza surface using the module 70B irradiation systems. The program for the lower sidePicia specially prepared and adapts to its culinary requirements on the basis of the fact that it has no surface or various other food objects, and is carried out the initial cooking simple dough for pizza. According to the a priori culinary knowledge database, the length of the waves is selected, which provides the proper depth of cooking at the right time for each of the food objects that are irradiated on the upper and lower sides of the pizza. To prepare the dough on the bottom of the pizza surface, you can choose a wavelength of 950 nm or 1275 nm, depending on the structural advantages of engineers. Both these wavelengths penetrate deeply into a pizza dough and do not have the tendency to fry or burn the surface of the dough. When the dough is adequately prepared on the deep, additional or alternative waves may be used, possibly 1450 nm, for frying the surface. At this wavelength, a lower penetration depth is expected, and thereforemore energy is quickly absorbed near the surface, forming a roasted crust for a better appearance and taste. Depending on the culinary object and the characteristic spectra absorption of each of the food components, you can choose other narrow bandwidths, whichallows better optimize the overall preparation in accordance with the requirements. It should accept a combined commercial and engineering solution to determine whether how many different wavelengths should be provided in a particular furnace, taking into account budget requirements, not the most optimal preparation. You can, of course, implement several different narrow-band semiconductor scanning modules 70A, but this will be the result of the necessary compromise, respectively, intermediate and productivity. It is also advisable to have more complex and simpler versions of this concept narrowband stove, which are commensurate with the commercial solution. For example, in a simpler case, pizza 35 is simply placed in the culinary chamber 30 and then manually removed after the end of cooking. Another embodiment of the concept can use the rays ultrasonic semiconductor irradiators contained in the matrix or rail75 under pizza 35. It can be used instead of narrowband scanning modules 70B.

While the cooker program is executed by interacting between the control system 15 and the narrowbandband irradiation modules 70A and 70B, the control system 15 periodically requests the camera camera 60 to monitor the cooking process. Thus, the camera canequalize the elongated image before cooking with the data that it receives duringpreparation, and control many different parts. For example, she can check whether the crust and pizza dough are properly fried. She can also be sure that the drum has acquired a deeper green color. If the camera 60 also has the functionality of the infrared camera, it can control the temperature of each surface and crust, cheese and sauce. These temperatures can be reported to the control system 15 for comparisons with the appropriate predicted temperatures for proper preparation.

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If the logic program in the control system 15 determines that no temperature is not correct for indicating proper preparation, it can initiate the software procedures for additional irradiation precisely where it is needed, in order to ensure proper cooking. This concept of a closed loop, which in this case is performed between the camera 60 and the control system 15, is an important aspect of the advanced use of the present invention in its various forms.

Upon completion of cooking with the help of narrow-band semiconductor sources, the control system 15 completes the irradiation program. The control system 15 supplies a signal to the line drive 12 for lifting the output door 41B. When the sensor 14C signals to the control system 15 that the door is in a fully open position, the control system 15 causes the drive command 12 to stop at this position. At this point, the control system 15 sends a signal to the engine module 10 for inclusion during a specified period of time with the programmed speed. This action initiates the direct movement of the conveyor belt 22 for moving the pizza 35 from the culinary chamber 30 to the loading unit 24. When the conveyor belt 22 is moving, the camera 60 makes photographs and controls the correct transfer of pizza 35 from the culinary chamber 30 to the destination 24.

You can, of course, combine these narrow-band guides to semiconductor concepts in a variety of creative ways to eventually get the most efficient and economical system of cooking, drying, baking or heating. Based on theseconcepts, a specialist in this field of engineering will be able to distribute them to simple or complicatedimplementation after collecting the relevant experimental data.

Obviously, the system or systems discussed herein, for example, the systems represented in FIGS. 12, 13 or 14 (a) - (c) may be provided with additional features. For example, a system of management, for example, control system 15, can be provided with a cooling system for cooling electronics in the control system. In addition, you can provide a warning system that can form part of the control system to provide warnings or alerts related to the state of the system or the culinary process. In addition, the cooking chamber can be provided with a ventilation system for providing air exchange between the cavity and other positions, for example, the position outside the cavity or system obstructions, for removal from the cavity, for example, moisture, smoke, steam, and so on. The ventilation system may take various forms , including forms, which uses a fan, catalyst or other suitable means. In addition, the cooking chamber may be provided with a suitable raster system or prefix.

The systems contemplated in the present application include the systems described in FIG. 12, 13 and 14 (a) - (c) have many advantages over those that are known in the field of cooking. One of these benefits is energy efficiency. In this regard, traditional broadband or ohmic heating elements are actually very efficient heat generators, but the problem is the effective use of heat. Although diodes and laser diodes are rapidly gaining efficiency, ohmicheating elements are much more effective at the actual generation of heat. Inefficiencybecomes in equilibrium, since most of the heat released by the thermal heating element is squandered, most of the heat heats up the air that ineffectively contacts the object, and much of the energy is inefficiently controlled. The above described different classes of semiconductor emitting devices, each of which is associated with a certain consideredeffectiveness of the transformation. Net efficiency of the system, mainly due to the ability to provide energy in exactly where it is needed, and the development of a narrow range of wavelengths in the second correspondence with the object, which provides the most effective. If you take the whole system of heating / materials, the advantages of digital control over the narrow seamstrength of the wave and the spatial distribution, provide a system that supplies heat energy in the heating material, much more efficient way. In addition, in traditional broadband heaters, not only is there a significant component of suboptimal wavelengths and incorrectly directed energy, but most of the directed radiant energy is often exhausting, which can not directly interact with food materials. This is usually done because that longer waves of infrared radiation usually lead to skin or surface heating of food or object, thus, burning or re-burning the surface. This is another element of the heat energy being discharged, which is not available with the proper application of the narrowband technology proposed here.

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Increased efficiency inherent in narrowband semiconductor source radiation, diodes, due to the fundamental peculiarities of their nature. Significantly, the amount of radiating heat energy can be sent to the right place and injected in shorter interval of time than when using traditional broadband ohmic heaters. This, of course, determines the high speed of digital cooking. Since diodes and laser diodes are "instantaneous" devices, they do not need the time to warm up, and they do not spend the energy that traditionally goes to the previous heating or maintenance of the next state of the cup. Diodes, by their nature, are two-position or digital devices. In other words, when applying direct voltage to them, they either open or not. Very small increase, usually less than 200 mV, direct voltage leads to a sudden and sharp increase in current. The designer will try not to use a SVD, ICE or laser diode device in a partially switched state. This is a striking contrast to the traditional broadband heat sources, such as ohmic helixes, calrods or quartz lamps. Broadband heating sources have a very linear, analogue ratio between voltage and current, while semiconductor light emitting diodes and laser diodes are clearly nonlinear, the digital relationship between voltage and current . This is illustrated in FIG. 15. Levels of excitation of electric current should be carefully regulated by the external circuit fordiod devices, because after reaching the voltage of the digital switching, theypass any electrical current available in the chain, until the destruction of devices. Another feature of these digital, narrowband illuminating devices is extremely high speed. They can be turned on and reach full intensity irradiation and then switch off again for nanoseconds. Quartz lamps are the fastest omega sources of heat. For comparison, a traditional analog quartz lamp for the implementation of the same process will take at least a few seconds. Therefore, digital narrowband semiconductor sources of radiation are more than a billion times faster than the fastest analogue broadband sources. a traditional analog quartz lamp for the implementation of the same process will take at least a few seconds. Therefore, digital narrowband semiconductor sources of radiation are more than a billion times faster than the fastest analogue broadband sources. a traditional analog quartz lamp for the implementation of the same process will take at least a few seconds. Therefore, digital narrowband semiconductor sources of radiation are more than a billion times faster than the fastest analogue broadband sources.

The combination of ultra-high speed digital narrowband illuminating device, its inherent orientation and precision wavelength selectivity provides many important advantages for the developer of furnaces and culinary equipment, guided by cinema concepts. One important result is to increase the speed of cooking, preservation, baking, drying, and so on compared to the stoves based on traditional broadband omic or quartz heat sources. For example, a toaster may not only start drying, but actual drying speed can be greatly increased by the ability to clearly control penetration, which allows you to inject energy at a higher speed without adversely affecting the culinary result. Actually, you can fry the surface of the toast and heat the thickness of the bread without the traditional problem of overdrying, which often occurs in traditional broadband toasters. The targeting of devices can inactivate almost all the energy directly into the toast and direct it where it isnotnecessary, deep inside or on the surface. This not only raises energy efficiency, but also allows the toaster casing to remain much colder than traditional analog wideband devices, and results in less environmental heating in the kitchen.

Another advantage of these systems for digital cooking is to reduce the heating of the environment. The high amount of heat released by the traditional broadband ommicheaters is not absorbed by the heated material. For example, if the oven for preparation of pizza is heated in advance and ready for pizza, energy is fully expended until the pizza actually prepares for cooking. This energy of the next state is simply lost in the environment, where external environmental control systems, for example, HνΑΟ systems, have to spend even more energy to drive it away. Since the design of a diode furnace involves the choice of one optimal absorption wavelength or several optimal wavelengths, radiant heat energy, generated emitters, almost completely absorbed by the material about ' and therefore does not make a negative impact on the environment. Applying the design on the basis of a water-cooled shirt for printed circuit boards, which are mounted diode devices, you can transfer the hard, not converted into radiant energy, to another place where it is needed.

Another additional advantage of these systems is a more efficient heating, which leads to lower energy consumption of the device. In addition, due to the increased "drying speed", an alternative to low power, with a very small diode matrix, you can use for tooth preparation for the same period of time as with a traditional toaster, but with an additional advantage of consuming only a part of the electric power.

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Similarly, the reduced power consumption (for the above reasons) compared with the traditional peak technology means lower energy costs necessary for a cycle of drying or cooking. Power consumption is effectively transformed into photons anddirectly injected into the object. Since the energy emitted by these devices can be directed, a very high percentage of emitted photons actually reaches the target object. Since energy with a higher density can be directly injected for cooking, without fear of burning the surface, cooking can be done significantly less time. This can lead to significantly lower energy costs and a reduced carbon footprint, for example, to prepare each pizza. Since this digital technology involves "instantaneous switching" and "instant shutdown", it allows you to consume power only during actual cooking. Many varieties of environmental impact are reduced, which gives additional benefits to the owner of a store selling pizza or the entire household economy.

As demonstrates the durability of modern laser diodes, LEDs and other semiconductor devices, the operation life can be greatly increased with the use of new technologies. However, traditional furnaces and toasters are subjected to mechanical wear associated with cycles of repeated heating and cooling during operation. Despite its strength, the heating or heating elements eventually burn out or collapse, such as the filaments of the filament in the filament lamps.

In addition to the benefits of efficiency and cost, these systems include security features. First, the danger of electric shock is reduced. Ramic heaters operate on the basis of current flow through the bare wire that has resistance. In spite of the fact that they are safely placed in the furnace or toaster, contact with water (for example, in the outlet) or a conductive object, such as a fork, can create dangerous situations. On ohmic or quartz heating elements are usually supplied with a substantial voltage of alternating current, which makes them potentially dangerous. Narrowband diode device reduces the risk, since the fuel element is not directly open, inaccessible or does not allow contact with the user. In addition,

Also decreases the fire hazard. The mechanism of heating the environment, provided by traditional toasters, can be the convection of air from the crack for toast, but also often combined with convection through the toaster's body. Hot toaster can really cause a spill. Diode devices, by themselves, usually do not reach the temperature of over 100 ° C without damage, and their source energy has an extremely radiant rather than convective nature. They function by releasing thermal radiation that directly heats the object, but the unconscious air, thereby preventing the heating of any object to the temperature of ignition. Thus, provided with a product that has a significantly reduced fire hazard.

Culinary methods using the system data are also improved. For example, cooking oils have characteristic absorption curves similar to each other, but those that differ from the corresponding curves for most other foods. They have a distinct absorption peak that can be used to give a taste similar to that obtained by frying. When conducting irradiation at the peak wavelength of absorption, it is possible to heavily heat the culinary oil, at the same time, providing a moderate superfine roasting of the product covered by it. The advantage of this unique feature allows you to create a cooking system designed to replace the process of frying in fritury. However, the present invention allows you to cook much faster, with lower energy consumption, reduced financial costs and increased security, due to the lack of large volumes of hot cooking oil. It is also anticipated that a properly constructed system will make a healthier meal, as it is expected that the absorption of cooking oil is lower, and it is expected that more beneficial health foods can be used in smaller amounts.

Direct irradiation of food objects also leads to the improvement of the culinary method. As mentioned above, traditional cooking, for the most part, does not involve direct exposure to food by irradiating elements. The reasons for this are discussed above. Since ohmic heating elements are used in many furnaces for the heating of air, and air is used for heating food, it introduces in the process of additional inefficiency and uncertainty. Quartz lamps are used for direct irradiation, but are often used in conjunction with

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fans for extracting hot air, which output of quartz also creates around the culinary cavity. One of the advantages of digital narrowband radiation is that you can choose the correct wavelength or the correct wavelengths for direct exposure to objects or food objects. As described in the above example of the "coloring of pizza" accuracy, there are many additional advantages due to the combination of functional features of the present invention. To facilitate direct exposure, it is sometimes recommended to use glass or other utensils, extremely transparent inused wavelength. When using dishes that are transparent at a certain wavelength, it is easy to see that food or target object can be directly irradiated from all directions and pages. The invention, of course, can be used in practice with partially transparent dishes or even opaque dishes, which are heated by direct exposure. It is worth considering using another interface, which may not be as optimal as it will produce food with a much higher percentage of heat conductivity from the dishes. In this mode of preparation, part of the benefits of deep penetration into food or the object due to the correct wavelength selection may be less pronounced.

These systems also allow the user to provide the aroma to food objects. Consumers are very fond of any way to provide food smell of aromas in the system of cooking. Most electric cooking systems do not have the ability to give this scent a meal. This is one of the reasons for the special popularity of cooking systems based on combustion. Another advantage of the present invention is that it can be adapted to provide a flavor of smoke or other aromas. Placing a cake, a piece of wood or a special substance or element in the culinary chamber near food, you can selectively make the necessary radiation to create smoke or other flavoring. Narrowband radiation, whose wavelength is specially selected in accordance with the absorption properties of the insert, can be directed to study the insertion, which creates a proper smoke or aroma with appropriate heating. You can also use a nutritional supplement that activates the length of the waves, which creates the desired aroma when irradiated with the activating wavelength. This invention is very suitable for this method, since digital narrowband devices have the possibility of accurate targeting, the ability to select a narrow range of wavelengths and the possibility of effective use to enable and exclude the flavor of the design.

Another additional advantage of these systems is their ability to predominantly integrate with other culinary devices. Details or components of recipes or other parts of the meal can be cooked with high accuracy so that devices can "talk to all", that is, the objects completed at the right time. The ability to instantly enable and disable the device makes it easier to control the speed of cooking or processing, which ensures synchronization with other devices for preparing or storing food.

From the foregoing description, it turns out that the present invention provides an innovative andeffective method for injection of narrowband radiation of optimal wavelength in an object for a certain change in the temperature of an object. Injection radiation, in principle, maybe placed in any narrow wavelength range in accordance with this application, but most often is in the near infrared wavelength range, where there is likely to be more interesting absorption signatures for different target products. For example, "purpose" of infrared injection can be various objects, from the bulk of the target components in the area of ​​commercial or industrial exploitation to the usual individual food objects in the home or restaurant culinary process.

In general, the ideal narrowband infrared heating system optimally improves the temperature of the object, providing the proper combination of heating or cooking with minimum energy consumption. Such a system may include a device capable of directly converting its input power into the source radiation energy of electromagnetic radiation, at the selected single wavelength or in a narrow band of wave lengths aimed at the object, so that the energy containing the radiation is partially, to the desired extent or completely was absorbed by the object and turned into heat. The more effective the input electric energy is converted into the output energy of electromagnetic radiation, the more efficient the system can operate. The more effectively the radiated electromagnetic waves are aimed at the desired areas of the object, the more efficiently the system performs its work. The radiating device, chosen for use, must have the characteristics of instantaneous "turning on" and instantaneous "shutdown" so that in the absence of irradiation object did not spoil neither the input nor the initial energy. The more effectively irradiated object absorbs radiant energy of electromagnetic radiation for direct

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transforming it into heat, the more efficient the system can function. For optimal system, it is necessary to pay special attention to the design of the system, selecting it appropriately so that the set of output wavelengths of the system used for a particular application is consistent with the characteristic of the object absorption in this narrow wave length range. These wavelengths are likely to be selected differently for different target applications of the invention, for the best agreement with the specific characteristics of the absorption of various target objects, as well as according to the various desired results.

On the contrary, and in order to further illustrate the benefits of this application, in technology and industry is well-known use of various types of heating systems or cooking broadband emitting for a wide range of processes and treatments. As mentioned above, previously knowntechnology used for these purposes, create a relatively broad spectrum of radiatedelectromagnetic energy. In almost all cases, different types of heating elements, which are used in furnaces, generate radiant energy in a range of widths of at least several thousand nanometers or more. In many cases, even when irradiation, which is produced, is initially primarily infra-red energy, it heats up air, resulting in convection heating for the time when it heats up the object. In many cases it is generally not allowed to direct heating about ' The object is radiant energy, since many wavelength ranges in the broadband source have a negative effect on the object being heated or cooked. Many different broadband technologies are often referred to as infrared heating, infrared processing, infrared preparation or infrared processing, whereas in fact, they almost always generate as well radiant energy far beyond the infrared spectrum, as well as convection heat. For example, in an ordinary home oven, ohmic "calodic" heating elements are used, generating in large quantities the broadband energy of infra-red radiation with very large wavelengths. They also generate in the middle infrared and near infrared bands, as well as in the long-wave part of the visible spectrum. This is evidenced by the fact that they are luminous with a cherry-red set, being included in full capacity. Usually assumes a screen that prevents direct exposure to radiant energy for food, since long-wave energy in a high degree of probability burns the surface of food. The screen blocks most of the energy of directinFrequency radiation, but since this energy remains in its area of ​​localization, it overheats the air around the heating element and significantly heats the walls andother components of the furnace, which in turn leads to the heating of the furnace cavity, resulting in convection cooking or cooking food with hot air. The so-called "convection oven" simply has a fan that accelerates the hot air, increasing, in this way, the rate of heat exchange with food or object. In fact, all the furnaces,

The infrared spectrum segment, in general, is divided into three classification by a wavelength. They, in general, are categorized as near infrared, medium infrared and far infrared wavelength ranges. Although it creates the impression that these terms are used in practice very freely and slightly differently in different industries, clear boundaries for these common areas are not established. However, in general, it is believed that the near-infrared region occupies a range of visible light up to 1.5 microns. Since wavelengths are often measured here and in other documents in nanometers, it should be understood that 1000 nm (nanometers) is 1 microns (microns). The median infrared region ranges from 1.5 to 5 microns. Regarding the long-wave infrared region, in the general case, it is considered,

As often mentioned above, sources of infrared radiation, which were previously used in industrial, commercial, culinary, heat-processing or processing equipment, generate a very wide range of wavelengths, which is unlikely limited to one section of the infrared spectrum. Although their broadband output can have a peak in a particular range of infrared spectrum, they usually have an exit tail that goes far to neighboring areas. Manufacturers of equipment and devices still consider it possible for themselves, in the general case, to call their products heating in the "infrared" range, although this term has become so widely used, which took content relative to the description of the actual range of wavelength. He does not bear any specific information about the possibility of heating or cooking the product.

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quartz infrared heating lamps, which are well-known in technology and are used for various operations of cooking, preservation, drying and heat treatment, often have a steam output in the range of 900 to 1100 nanometers. Although the output can have a peak between 900 and 1100 nanometers, these lamps have a very significant output in the wide continuous spectrum of lengthswires from the ultraviolet (UV) range, through the visible range and up to about 3,5 microns in the average infrared range. As an example of a typical level of technology in this field, in FIG. 16 shows the graph of the output of quartz infrared heating elements of several different types, manufactured by the large American manufacturer Negaeiz. Obviously, although the peak output of quartz lamps of various designs is in the near infrared or medium infrared range, they are broadband sources with a significant output visible range and an average infrared range. For example, a quartz tube simulating a black body, warmed up to 2200 degrees Celsius, emits more than 40% of its energy in the visible light band, and its radiation range reaches a wavelength of more than 3000 nanometers. Therefore, existing infrared sources with a wide spectrum do not allow you to choose the predominant wavelength or wavelength, most desirable for any application heating, preservation, preparation or processing. They are suitable for processing or process in wide spectrum and are widely used because of their cheapness, the lack of practical alternatives, and since the actual modalities of cooking at certain wavelengths were not well known prior to the appearance of the present invention.

Unlike the historical use of these analog, broadband sources for cooking, the herein discussed improved method of heating is carried out in specific and much narrower ranges of wavelengths. The choice of range depends on the material of the object or the food, but this method often provides the most effective way of cooking or increase the temperature in many objects due to the absorption of thermal energy in one or several narrow wavelength ranges. For example, for type of broadband infrared sources, it often happens that the actual absorption of most of the thermal energy occurs in narrow ranges of wavelength depending on the absorption of the object, despite the fact that the source produces the energy of infrared radiation in a band width of more than 3,000 nm. Important and useful absorption or transmission may be carried out in a band width of less than 100 nm. Thus, the output energy of broadband IR, for the most part, does not find a useful application for achieving a specific result of heating or cooking.

Particular heating elements are the oldest and still most popular type of electric heat sources in many furnace and drying systems. They are often called "kalrodami", remembering the trademark that once existed in the industry, but they are simply ohmic heating elements. When passing electric current through heating elements, they behave like blackened heat sources, whose output changes as a function of their temperature. Since their operating temperature is lower than that of quartz lamps, they produce infrared radiation of very high wavelength. Their output is obeyed by Planck's law. In the oven, they actually heat the object, which is close to the element, in three different ways. They overheat due to the thermal conductivity of the atmospheric air surrounding them, and, to a lesser extent, structure, installation and interior of the furnace. Then the hot air, in turn, heats up the object convectionally. The energy of long-wavelength infrared radiation also tells the radiant heat of the object, as well as the structure in which it is placed. Although this heating method involves several different heating modes, Chazo said that it works efficiently, but not very efficiently. In a simple example, if a double-coil furnace opens in the middle house during the culinary process, a large number of heated air is released and replaced by air with a normal external temperature of the house, which has to be heated again with the help of ohmic heating elements. The cooking efficiency is lost when the oven door opens, despite the fact that there is a significant heating environment near the furnace. Actually, if leave the oven door open, the system will eventually try to heat the house totemperature set in the furnace, using a thermostat, which is extremely costly. However, the male occurs in stores selling pizza and in many commercial or industrialcurricular facilities, where conveyor furnaces often do not have any doors at all.

The present invention, in contrast to traditional furnaces, in at least one form, implies that the irradiating devices are activated and generate energy only when it is necessary. Since they are "instantaneous" / "instantaneous" devices, they must be included only when the food or object is present for heating. Multi-purpose ovens are included all day long, since cooling and reheating times are high

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and since the furnace has reached a stable temperature that nobody wants to beat down. For example, for a store selling pizza, support for furnaces included for many hours orcontinuously associated with high costs. This invention gives a great advantage in these circumstances and at the same time can significantly improve the accuracy of the culinary process.

This invention provides a much more direct way to efficiently heat, due to the application of new narrowband technologies and scientific data on molecular absorption. By selecting narrowband heating elements that meet the characteristics of narrowband absorption of an object, it is possible to directly inject the radiant energy into an object. The depth of penetration is the function of the absorption coefficient of the object on the longwidth, chosen for the exit narrowband radial heating elements.

Electricity costs account for an increasing percentage of the cost of finished or heat-treated product. For example, significant costs for a pizza store are the cost of energy consumed by the pizza oven. The present invention provides a much more effective way of converting electric energy into radiant energy, which can be directly injected into objects that are being prepared, dried or preserved for the induction of heat required for the process.

In this regard, in the field of solid-state electronics, a semiconductor emitter or HVD or laser diodes are well known in the art. Photonic or flow emitters of this type are commercially available and operate at different wavelengths from the ultraviolet (UV) range, through the visible spectrum and far away in the infrared region. Fundamental electro-optical transformation and chemistry are absolutely analogous to LEDs and laser diodes for the actual creation of laser diodes with photon output and an additional stage of increasing the pumping up to the effective radiation of photons, allowing to achieve higher levels of optical output. As indicated, since the offensive are narrowband devices suitable for practical application of the present invention, The process of electron-photon conversion, which will be described, refers to both LED and laser diodes.

LEDs and laser diodes are made of semiconductor material, duly doped with N- and P-impurities. The volume of the semiconductor material properly treated to hold the P-doped region, located in direct contact with the N-doped area of ​​the same material as a whole, is referred to as a diode. Diodes have many important electrical and photovoltaic properties, well known in the art. For example, it is known in the art that, on the physical boundary between the N-doped region and the P-doped region of the formed semiconductor diode in the material, there is a characteristic forbidden zone. Tsjazaboronen zone is connected with the difference between the energy level of an electron located in the conduction band in the N-region and the energy level of the electron on the lower available orbital in the P region.

The exact energy level or, otherwise, the wavelength of the photon emitted corresponds to the energy transition of the conduction electron.

In short, IEDs act as emitters based on the direct transformation of current in radiation. In contrast to the filament or other black-type emitters, they do not require the conversion of the input energy into an intermediate form of heat to be able to release the photon. Due to this behavior of the direct transformation of current into radiation, SVDs have extremely high performance. LEDs are numerous applications where it is required to generate a sequence of pulses of UV, visible and near infrared light with an extremely highfrequency of repetition. One particular application, where the possibility of SVD to provide high frequency repetition of pulses is particularly useful, is an application of automated discreteimplementation of parts, where visible or near-infrared light is used toformulate a focused lens of the image,

Unlike sources based on the filament, the LEDs radiate in a relatively limited range of wavelengths, corresponding to a specific band gap used semiconductor material. This property of the LED is especially useful in areas of application, which requires operations selected by wavelength, for example, lightingcomponents, state indication or optical connection. In recent times, large CLSs have been used for more large-format forms of visible lighting or even for signal lights, for example, rear lights of cars or traffic lights.

The above description only provides for the disclosure of specific options for the use of the inventions and is not intended to limit its volume. Therefore, the invention is not limited to exclusively

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the above-described applications or variants of use. In this disclosure in a general outline, many uses of the invention and one particular embodiment are described. A technician in the field of technology may propose alternative applications and specific embodiments of the application, corresponding to the scope of the invention.

FORMULA INSTRUCTIONS

1. Heating treatment system comprising:

culinary chamber (oven), the configuration of which allows it to safely keep energy radiation through infrared heating elements, which have a high orientation due to metallized reflective elements, and in which the food object can be placed for direct and indirect exposure,

a structure, at least partially surrounding the culinary chamber, intended to hold directional irradiators near the culinary zone, so that irradiation of radiation devices could be carried out on a food object, at least one of direct or indirect effect,

at least one narrowband semiconductor emitting device, wherein at least one narrowband semiconductor emitting device is selected so that the wavelength of its output radiation is consistent with at least one absorption characteristic of at least one of the target food objects at that length of the wave, and

a control system for representing (directing) at least an electric current that is operatively linked to a control button, can take different configurations, use different software procedures and hardware configurations, for digital control, ultra-band illuminating devices to provide output radiation in a camera based on at least one of the input through intended for the user interface, the output signal of the sensor, which is used to determine the state of localization, and which determines the activity to America is the safety of the energy of radiation, and which optically determines the readiness of the object, with the help of a surveillance camera.

2. The system of claim 1, further comprising a viewing window, the location of which provides surveillance over the radiation zone without passing the wavelength of the emission radiation.

3. The system of claim 2, further comprising a bolt system for the selected disconnection of the radiation during observation.

4. The system of claim 1, further comprising a conveyor system for transporting food objects to an irradiation zone.

5. The system of claim 1, further comprising sensors dug out with the ability to determine at least one indicator, one of which is at least a temperature, surface dryness, color or size of the food object before, during and after exposure, and to effect the results of the determination.

6. The system of claim 5, wherein the sensors connected to the control system comprise a camera that determines the position, type of food, and the size of the food object.

7. The system of claim 1, wherein at least one narrowband semiconductor emitting device generates its narrowband radiation in two different narrow bands of wavelength radiations, each of which is selected so that the wavelength is consistent with the characteristic absorption of the predicted object of radiation.

8. The system of claim 1, further comprising broadband selective activating irradiation elements for preparing a food object in addition to narrowband heating.

9. A method for preparing, drying or preserving a food object, according to which: at least one target food object is introduced into the irradiation zone and placed so that it can be directly or indirectly irradiated by radiating devices, safely isolate the irradiation zone by that at least one narrow band of lengthwaves contains two ranges of wavelengths selected on the basis of absorption characteristics that significantly differ in the center of each of the wavelength ranges, as well as that the centers of the selected range of lengths and the waves are at least 150 nm apart,

emitting directed radiation from at least one digital narrowband semiconductor illuminating device during periods when the irradiation zone is insecure, and

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irradiation of at least one food object with at least one narrow band of length of the wave, which is consistent with the absorption characteristic of at least one target food object during radiation.

10. Method of processing the food object, according to which:

transport the food object to the culinary chamber,

determine the position of the food object during the transport of the food object to the culinary chamber due to the fact that the camera continuously creates images that are analyzed for determining the position of the food object,

Determine that the food object is in a given position,

stop shipping on the basis of the definition,

close the cooking chamber to keep the contents of the camera safe,

determine or introduce indicators of a food facility,

determine the order of preparation on the basis of determination or introduction and on the basis of culinaryparameters,

irradiate the food object on the basis of the cooking procedure for a period of time with the help of at least one digital narrowband semi-conductor emitting device at the wavelength, which corresponds to the predominant characteristic absorption of the food object at this wavelength,

open the cooking chamber after the end of the irradiation, and

transporting a food item from the culinary chamber.

11. The method of claim 9 or 10, wherein, at irradiation of at least one food object, at least one food object is irradiated depending on the directed radiation.

12. A method according to claim 9 or 10, according to which, at radiation, at least a single-emitting device is struck.

13. The method of claim 9 or 10, wherein at least one narrow band of wavelength comprises two wavelength ranges, selected based on substantially different absorption characteristics in each center of the wavelength range.

14. The method of claim 9 or 10, wherein, in at least one narrow strip of length, a deep penetration into the food object occurs.

15. The method of claim 9 or 10, wherein, in at least one narrow band of length, the surface heating of the food object is achieved.

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Computer layout of M. Chamonix

State Service of Intellectual Property of Ukraine, st. Uritskogo, 45, Kyiv, SME, 03680, Ukraine

State Enterprise "Ukrainian Institute of Industrial Property", st. Glazunova, 1, Kyiv - 42, 01601

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