Liquid crystal display device and semiconductor device

Liquid crystal display device and semiconductor device

Liquid crystal display device and semiconductor device

The present invention relates to a semiconductor device and a liquid crystal display device. The present invention particularly relates to a semiconductor device and a liquid crystal display device that control liquid crystal molecules by generating an electric field substantially parallel to the substrate.

One of the technical development policies of liquid crystal display devices is to expand the viewing angle. As a technology to achieve a wide viewing angle, a method of controlling the gray scale by moving liquid crystal molecules in a surface parallel to the substrate by generating an electric field substantially parallel to the substrate is currently used. As such methods, IPS (In-Plane Switching) and FFS (Fringe Field Switching) can be cited. As an FFS, there can be mentioned a method in which a second electrode having an opening pattern (for example, a pixel electrode whose voltage is controlled according to each pixel) is arranged under the liquid crystal, and a first electrode is arranged under the opening pattern (for example, a common The voltage is supplied to the common electrode of all pixels). The liquid crystal is controlled by applying an electric field between the pixel electrode and the common electrode. Since the electric field is applied to the liquid crystal in a direction parallel to the substrate, the liquid crystal molecules can be controlled by the electric field. In other words, it is possible to control the liquid crystal molecules oriented parallel to the substrate in the direction parallel to the substrate (the so-called parallel Orientation), so the viewing angle can be expanded.

The first electrode (common electrode) is formed on the glass substrate and is in direct contact with the glass substrate, and the gate electrode in the reverse staggered transistor is also formed on the glass substrate and is in direct contact with the glass substrate. On it, the insulating film used as the gate insulating film in the reverse staggered transistor is formed in direct contact. Furthermore, a second electrode (pixel electrode) is formed thereon (refer to Patent Document 1).

Alternatively, the first electrode (common electrode) is formed on and in direct contact with the insulating film used as the gate insulating film in the reverse staggered transistor. In addition, the semiconductor film or the source electrode and the drain electrode are also formed on the insulating film used as the gate insulating film in the inverted staggered transistor and directly contact the insulating film. And on it, the insulating layer is formed in direct contact. Furthermore, thereon, the second electrode (pixel electrode) is formed in direct contact (refer to Patent Document 1).

Patent Document 1: Japanese Patent Application Publication No. 2000-89255

In the conventional example as described above, the electrode used to drive the liquid crystal is arranged with an insulating film sandwiched therebetween. Therefore, even if the distance between the electrodes is to be increased, there are certain restrictions. If the thickness of the insulating film between the electrodes is increased, for example, the gate insulating film in the transistor also becomes thicker. Therefore, there is a negative effect such as a decrease in the current driving capability of the transistor.

In addition, the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode. Therefore, when the distance between the pixel electrode and the common electrode cannot be freely set, the arrangement interval of the opening pattern of the pixel electrode is Or the value of the width of the opening pattern is also greatly restricted. Therefore, there is a problem that the magnitude or direction of the electric field applied to the liquid crystal molecules is inappropriate.

In view of the above problems, an object of the present invention is to provide a display apparatus and a manufacturing method, which can improve the degree of freedom of display of the interval between two electrode elements, and thus may be the most appropriate electrical field is applied between the electrodes.

In view of the above problems, a semiconductor device according to the present invention includes: a first electrode formed on a substrate; a first insulating film formed on the first electrode; a semiconductor film formed on the first insulating film; A second insulating film; a conductive film formed on the second insulating film; a third insulating film formed on the conductive film; and a second electrode formed on the third insulating film and having an opening pattern.

The liquid crystal display device according to the present invention includes: a first electrode formed on a substrate; a first insulating film formed on the first electrode; a semiconductor film formed on the first insulating film; a second insulating film formed on the semiconductor film A conductive film formed on the second insulating film; a third insulating film formed on the conductive film; a second electrode formed on the third insulating film and having an opening pattern; and a liquid crystal disposed on the second electrode.

According to the semiconductor device and the liquid crystal display device, the first electrode is formed on the substrate, that is, under the semiconductor film. In addition, the second electrode is arranged on a conductive film (for example, a gate electrode or source electrode of a transistor, etc.) or a third insulating film. Therefore, compared with the prior art, the first electrode and the second electrode can be enlarged. The spacing between the poles. In addition, even if the thickness of the first insulating film is changed, other elements such as transistors are not affected. Therefore, the thickness can be changed arbitrarily. As a result, the interval between the first electrode and the second electrode can be freely set. Therefore, the degree of freedom of the interval between the first electrode and the second electrode is improved. Also, the gradient of the electric field applied between the electrodes can be controlled, and therefore, for example, the electric field in the direction parallel to the substrate and the like can be easily increased. In other words, in a display device using liquid crystal, the liquid crystal molecules aligned parallel to the substrate can be controlled in a direction parallel to the substrate (so-called parallel alignment), and therefore the viewing angle can be enlarged by applying the most suitable electric field.

In addition, the opening pattern is used to generate an electric field in a direction substantially parallel to the substrate between the first electrode and the second electrode. Therefore, as long as an electric field in a direction substantially parallel to the substrate can be generated, various shapes can be adopted.

Therefore, as the opening pattern, not only a closed opening pattern such as a slot, but also a space between the conductor patterns and where the conductor pattern is not formed can be used, for example, the comb-tooth portions of the comb-shaped electrode are mutually connected. Between the space and so on. In other words, as long as there is a gap or interval between the electrodes. The same goes for the following.

Other semiconductor devices according to the present invention include: a first electrode formed on a substrate; a first insulating film formed on the first electrode; a semiconductor film formed on the first insulating film; a conductive film formed on the semiconductor film; A second insulating film formed on the conductive film; and a second electrode formed on the second insulating film and having an opening pattern.

According to the semiconductor device and the liquid crystal display device, the first electrode It is formed on the substrate, that is, under the semiconductor film. In addition, the second electrode is disposed on a conductive film (for example, a source electrode, etc.) or an insulating film, so compared with the prior art, the interval between the first electrode and the second electrode can be enlarged. In addition, even if the thickness of the first insulating film is changed, other elements such as transistors are not affected. Therefore, the thickness can be changed arbitrarily. As a result, the interval between the first electrode and the second electrode can be freely set. Therefore, the degree of freedom of the interval between the first electrode and the second electrode is improved. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. In other words, in a display device using liquid crystal, liquid crystal molecules aligned parallel to the substrate can be controlled in a direction parallel to the substrate (so-called parallel alignment), and therefore, the viewing angle can be enlarged by applying the most suitable electric field.

Other semiconductor devices according to the present invention include: a first electrode formed on a substrate; a first insulating film formed on the first electrode; a conductive film formed on the first insulating film; a semiconductor film formed on the conductive film; A second insulating film formed on the semiconductor film; and a second electrode formed on the second insulating film and having an opening pattern.

According to the semiconductor device and the liquid crystal display device, the first electrode is formed on the substrate, that is, under the semiconductor film and under the conductive film (for example, a gate electrode). In addition, the second electrode is disposed on the second insulating film, so compared with the prior art, the interval between the first electrode and the second electrode can be enlarged. In addition, even if the thickness of the second insulating film is changed, other elements such as transistors are not affected. Therefore, the thickness can be changed arbitrarily. As a result, the interval between the first electrode and the second electrode can be freely set. Therefore, the degree of freedom of the interval between the first electrode and the second electrode is improved. Also, the gradient of the electric field applied between the electrodes can be controlled, and therefore, for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. In other words, in a display device using liquid crystal, the liquid crystal molecules aligned parallel to the substrate can be controlled in a direction parallel to the substrate (so-called parallel alignment), and therefore the viewing angle can be enlarged by applying the most suitable electric field.

As another semiconductor device according to the present invention, in the above structure, the first electrode is a common electrode, and the second electrode is a pixel electrode.

As another semiconductor device according to the present invention, in the above structure, the first electrode is a pixel electrode, and the second electrode is a common electrode.

Another liquid crystal display device according to the present invention includes: a first electrode formed on a substrate; a first insulating film formed on the first electrode; a semiconductor film formed on the first insulating film; a conductive film formed on the semiconductor film A second insulating film formed on the conductive film; a second electrode formed on the second insulating film and having an opening pattern; and a liquid crystal disposed on the second electrode.

Another liquid crystal display device according to the present invention includes: a first electrode formed on a substrate; a first insulating film formed on the first electrode; a conductive film formed on the first insulating film; a semiconductor film formed on the conductive film A second insulating film formed on the semiconductor film; a second electrode formed on the second insulating film and having an opening pattern; and a liquid crystal disposed on the second electrode.

As another liquid crystal display device according to the present invention, in the above-mentioned structure, the above-mentioned liquid crystal is controlled by the electric field between the first electrode and the second electrode.

As another liquid crystal display device according to the present invention, in the above structure, the first electrode is a common electrode, and the second electrode is a pixel electrode.

As another liquid crystal display device according to the present invention, in the above structure, the first electrode is a pixel electrode, and the second electrode is a common electrode.

As the switch shown in the present invention, various types of switches can be used, that is, an electrical switch or a mechanical switch can be cited as an example. In other words, as long as it is a switch that can control the flow of current, it is not limited to a specific one, and various switches can be used. For example, transistors, diodes (for example, PN diodes, PIN diodes, Schottky diodes, and diode-connected transistors, etc.) can be used, or a logic circuit combining these can be used . Therefore, when a transistor is used as a switch, since the transistor only works as a switch, there is no particular limitation on the polarity (conductivity type) of the transistor. In addition, in the case where the off-current is preferably low, it is preferable to use a transistor having a polarity in which the off-current is lower. As a low-off current transistor, a transistor provided with an LDD region or a transistor with a multi-gate structure can be cited. In addition, when working in a state where the potential of the source terminal of the transistor used as a switch is close to the low-potential side power supply (Vss, GND, 0V, etc.), it is better to adopt the N-channel type. On the contrary, when the source terminal When working in a state where the potential of the sub is close to the high-potential side power supply (Vdd, etc.), the P-channel type is preferably used. This is because the absolute value of the voltage between the gate and the source can be increased, so it can be easily operated as a switch. In addition, a CMOS type switch can be formed by using both the N-channel type and the P-channel type. By using the CMOS type switch, even if the situation changes, such as the voltage to be output by the switch (ie, the input voltage) is higher or lower than the output voltage, proper operation can be realized. As the switch in the present invention, for example, a TFT that controls a pixel electrode can be cited. , Used to drive the switching elements of the circuit section, etc. However, in addition to these parts, a switch can also be arranged in the part where the current flow needs to be controlled.

In the present invention, connection includes electrical connection and direct connection. Therefore, in the structure disclosed in the present invention, in addition to the predetermined connection relationship, other elements (for example, switches, transistors, capacitive elements, inductors, resistance elements, or two Polar body, etc.). Or, it can be configured without interposing other elements. In addition, the case where no other element capable of electrical connection is interposed between two conductive films and is not electrically connected is recorded as a direct connection. In addition, when it is recorded as electrical connection, it includes electrical connection and direct connection.

As the display element, display device, and light-emitting device of the present invention, various methods or various elements can be adopted. In the present invention, a liquid crystal element can be used. The liquid crystal element is an element that controls the transmission or non-transmission of light by using the optical modulation effect of the liquid crystal. The element is composed of a pair of electrodes and liquid crystal. As a display device using a liquid crystal element, a liquid crystal display, a transmissive liquid crystal display, a semi-transmissive liquid crystal display, a reflective liquid crystal display, etc. can be mentioned. In addition, it may also have a display medium whose contrast changes due to electromagnetic effects. For example, EL elements (EL elements refer to elements having a light-emitting layer capable of obtaining light emission due to application of an electric field. In addition, organic EL elements and inorganic EL elements are included. Elements or EL elements containing organic and inorganic substances), electron emission elements, electronic inks, grating valves (GLV), plasma displays (PDP), digital micromirror devices (DMD), piezoelectric ceramic displays, carbon nanotubes, etc. In addition, as a display device using an EL element, an EL display can be cited. In addition, as a display using an electron emitting element As the device, an electroluminescence display (FED) or an SED system flat-panel display (surface conduction electron emission display) can be cited. In addition, as a display device using electronic ink, electronic paper can be cited.

In the present invention, various types of transistors can be suitably used as the transistor. Therefore, there is no limitation on the types of transistors that can be applied to the present invention. That is, for example, thin film transistors (TFTs) having non-single crystal semiconductor films represented by amorphous silicon or polycrystalline silicon, transistors formed using semiconductor substrates or SOI substrates, MOS transistors, and junction transistors can be suitably used. Crystals, bipolar transistors, transistors using compound semiconductors such as ZnO and a-InGaZnO, transistors using organic semiconductors or carbon nanotubes, etc. In addition, the type of the substrate on which the transistor is formed is not limited to a specific one, and various substrates can be used. Therefore, the transistor can be formed on, for example, a glass substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, and the like. In the case of a reflective display, single crystal substrates and SOI substrates can also be used. In addition, it is also possible to form a transistor on a certain substrate, and then move the transistor to another substrate to arrange the transistor on another substrate.

As described above, as the transistor of the present invention, various types can be adopted and can be formed on various substrates. Therefore, all circuits can be formed on a glass substrate or a plastic substrate. In addition, in the case where the manufactured product is a reflective display, the circuit may be formed on a single crystal substrate or an SOI substrate, that is, it may be formed on any substrate. By forming all circuits on the same substrate, the number of components can be reduced to reduce costs, and the number of connections to circuit components can be reduced to improve reliability. or It is also possible that part of the circuit is formed on a certain substrate, and another part of the circuit is formed on another substrate. In other words, all the circuits may not be formed on the same substrate. For example, a part of the circuit may be formed on a glass substrate using a transistor, and another part of the circuit may be formed on a single crystal substrate, and the IC chip may be connected by COG (chip on glass) to be arranged on the glass substrate. Alternatively, the IC chip and the glass substrate may be connected by TAB (Tape and Tape Automated Bonding) or a printed circuit board. In this way, by forming part of the circuit on the same substrate, the number of components can be reduced to reduce costs, and the number of connections to circuit components can be reduced to improve reliability. In addition, the power consumption is high in the high driving voltage part or the high driving frequency part. Therefore, if the part is not formed on the same substrate, the increase in power consumption can be prevented.

As the structure of the transistor, various methods can be used and are not limited to a specific structure. For example, a multi-gate structure having two or more gate electrodes may also be adopted. By adopting the multi-gate structure, the off-current can be reduced, the withstand voltage of the transistor can be improved, the reliability can be improved, and stable characteristics can be obtained. That is, when working in the saturation region, even if the drain-source voltage changes, The change in the current between the pole and the source is not too great. In addition, a structure in which gate electrodes are arranged above and below the channel may also be adopted. By adopting a structure in which gate electrodes are arranged above and below the channel, the channel area can be increased. Therefore, the current value can be increased, and the S value can be lowered because the depletion layer is easily generated. In addition, a structure in which the gate electrode is arranged on the channel or a structure in which the gate electrode is arranged under the channel may also be adopted. In addition, a forward staggered structure or a reverse staggered structure can also be used. Furthermore, the channel area can also be divided into multiple areas, or alternatively, it can be Parallel connection or series connection. In addition, the channel (or a part thereof) may also overlap the source electrode or the drain electrode. By adopting a structure in which the channel (or a part thereof) overlaps the source electrode or the drain electrode, it is possible to prevent the operation from being unstable due to the accumulation of charges in a part of the channel. In addition, an LDD area can also be provided. By providing the LDD region, the off-current can be reduced, the withstand voltage of the transistor can be improved to improve reliability, and stable characteristics can be obtained. That is, when working in the saturation region, even if the voltage between the drain and the source changes, the drain- The current change between the sources is not too large.

In the present invention, a pixel refers to a unit capable of controlling brightness. Therefore, for example, one pixel refers to one color unit, and the brightness is expressed by the one color unit. Therefore, in the case of a color display device composed of R (red), G (green), and B (blue) color units, the smallest unit of the image is formed by three pixels: R pixel, G pixel, and B pixel . The color unit is not limited to three colors, and more than three colors can also be used, such as RGBW (W is white), RGB with yellow, blue-green, and magenta added. As another example, in the case where the brightness of one color unit is controlled using multiple regions, one of the regions is one pixel. Therefore, as an example, in the case of using the area gray scale method, one color unit has a plurality of regions for controlling brightness, and the gray scale is expressed by them all, wherein one of the regions for controlling brightness is one pixel. Therefore, in this case, one color unit is formed by a plurality of pixels. In addition, in this case, the size of the area that contributes to the display may be different depending on each pixel. In addition, in the multiple brightness control areas of a color unit, that is, in the formation of a color unit Among the multiple pixels, the signals provided to each can also be slightly different to expand the viewing angle. In addition, in the case of "one pixel (for three colors)", three pixels of R, G, and B are considered as one pixel; in the case of "one pixel (for one color)", each When the color unit has multiple pixels, the multiple pixels are collected and considered as one pixel.

In the present invention, the pixels may be arranged (arranged) in a matrix shape. Here, the arrangement (arrangement) of the pixels in a matrix shape refers to a case where the pixels are arranged in a stripe shape, that is, in a so-called lattice shape formed by a combination of vertical stripes and horizontal stripes. Moreover, in the case of performing full-color display with three color units (for example, RGB), the dots of the three color units may also be arranged in a so-called triangular shape. Furthermore, it can also be configured in a Bayer manner. In addition, the color unit is not limited to three colors, and more than three colors can also be used, such as RGBW (W is white), RGB with yellow, blue-green, and magenta added. In addition, each color unit can also have different sizes of light-emitting areas.

The transistor is an element with at least three terminals, which includes a gate, a drain, and a source, and a channel region is provided between the drain region and the source region. Here, the source and drain of the transistor change according to the structure or operating conditions of the transistor, so it is not easy to say which is the source or the drain. Therefore, in the present invention, the regions used as the source and drain are denoted as the first terminal and the second terminal, respectively.

The gate refers to the whole including the gate electrode and the gate wiring (also referred to as a gate line, a gate signal line, etc.), or a part of these. Gate The electrode refers to a conductive film in which a gate insulating film overlaps with a semiconductor forming a channel region or an LDD (Lightly Doped Drain) region, and the like. The gate wiring refers to wiring used to connect between the gate electrodes of each pixel or to connect the gate electrode and other wiring.

Note that there are also parts used as gate electrodes and used as gate wiring. This area can be called a gate electrode or gate wiring. In other words, there is also a region where the gate electrode and gate wiring cannot be clearly distinguished. For example, in the case where the channel region overlaps with the gate wiring arranged to extend, the region is used not only as the gate wiring but also as the gate electrode. Therefore, this area can be called a gate electrode or gate wiring.

In addition, a region composed of the same material as the gate electrode and electrically connected to the gate electrode may also be referred to as a gate electrode. Similarly to this, a region made of the same material as the gate wiring and electrically connected to the gate wiring may also be referred to as a gate wiring. Strictly speaking, sometimes this area does not overlap with the channel area, or does not have the function of realizing connection with other gate electrodes. However, due to reductions in manufacturing costs and processing, or simplification of the layout, there is a region that is made of the same material as the gate electrode or gate wiring and is electrically connected to the gate electrode or gate wiring. Therefore, this area can also be called a gate electrode or gate wiring.

For example, in a multi-gate transistor, the gate electrode of one transistor is in many cases connected to the gate electrode of another transistor through a conductive film made of the same material as the gate electrode. This area is used to connect the gate electrode and the gate electrode, so it can be called gate wiring. However, since the multi-gate transistor can also be regarded as a transistor, it can also be called It is the gate electrode. In other words, what is made of the same material as the gate electrode or the gate wiring and arranged to be electrically connected to them may also be referred to as a gate electrode or a gate wiring. In addition, for example, the conductive film connecting the gate electrode and the gate wiring may be referred to as a gate electrode or a gate wiring.

The gate terminal refers to the area of the gate electrode or a part of the area electrically connected to the gate electrode.

In addition, the source refers to the whole including a source region, a source electrode, and a source wiring (also referred to as a source line, a source signal line, etc.), or a part of these. The source region refers to a semiconductor region containing many P-type impurities (boron or gallium, etc.) or N-type impurities (phosphorus, arsenic, etc.). Therefore, a region slightly containing P-type impurities or N-type impurities, that is, the so-called LDD region, is not included in the source region. The source electrode refers to a part of the conductive layer that is made of a material different from the source region and is electrically connected to the source region. Note that the source electrode is sometimes referred to as the source electrode including the source region. The source wiring refers to wiring for connecting the source electrodes of each pixel or connecting the source electrodes with other wirings.

However, there is also a part used as a source electrode and used as a source wiring. Such a region may be called a source electrode or source wiring. In other words, there is also a region where the source electrode and the source wiring cannot be clearly distinguished. For example, in the case where the source region overlaps with the extended source wiring, the region is used not only as the source wiring but also as the source electrode. Therefore, such a region can be called a source electrode or source wiring.

In addition, the area composed of the same material as the source electrode and electrically connected to the source electrode, or the part connecting the source electrode and the source electrode can also be called It is the source electrode. In addition, the portion overlapping with the source region may also be referred to as a source electrode. Similarly to this, a region made of the same material as the source wiring and electrically connected to the source wiring may also be referred to as a source wiring. Strictly speaking, this area sometimes does not have the function of realizing connection with other source electrodes. However, due to reductions in manufacturing costs and processing, or simplification of the layout, there is a region that is made of the same material as the source electrode or source wiring and is electrically connected to the source electrode or source wiring. Therefore, such a region can also be called a source electrode or source wiring.

For example, the conductive film connecting the source electrode and the source wiring may also be referred to as a source electrode or a source wiring.

The source terminal refers to the area of the source electrode or a part of the area electrically connected to the source electrode.

In addition, the drain includes a drain region, a drain electrode, and a drain wiring. In this specification, the term drain is used the same as source. In addition, the term drain terminal is also used in the same way as the source terminal.

In the present invention, a semiconductor device refers to a device having a circuit including a semiconductor element (transistor, diode, etc.). In addition, it may be any device that functions by utilizing semiconductor characteristics. In addition, the display device refers to a device having a display element (a liquid crystal element, a light-emitting element, etc.). It may be a display panel main body in which a plurality of pixels including display elements such as liquid crystal elements or EL elements, and a peripheral drive circuit for driving the pixels are formed on a substrate. Furthermore, it may also include a display panel equipped with a flexible printed circuit (FPC) or a printed wiring board (PWB). In addition, the light-emitting device particularly refers to a self-luminous type such as an EL element or an element for FED. Display device for display elements. The liquid crystal display device refers to a display device having a liquid crystal element.

In the present invention, the description of "on an object" or "on an object" such as "formed on an object" or "formed on an object" is not limited to direct contact with an object The situation above. It also includes the case where there is no direct contact, that is, the case where other objects are sandwiched in between. Therefore, for example, "the B layer is formed on the A layer (or on the A layer)" includes the following two cases: the B layer is formed on the A layer in direct contact; and, other layers (such as the C layer or the D layer, etc.) ) Is formed on the A layer in direct contact, and the B layer is formed on the other layer in direct contact. In addition, similarly, the description of "above ~" is not limited to the case where it directly touches an object, but also includes the case where another object is sandwiched in between. Therefore, for example, "the B layer is formed above the A layer" includes the following two cases: the B layer is directly formed on the A layer; and other layers (such as the C layer or the D layer, etc.) are directly formed on the A layer. Above the A layer, and the B layer is formed on the other layer in direct contact. In addition, similarly, the description of "under a certain object" or "under a certain object" also includes the case of direct contact and the case of no contact. Here, when it is described as "above a certain object", the side on which the electrode is formed is regarded as the upper side based on the substrate on which the electrode is formed.

According to the present invention, not only can the interval between the above-mentioned first electrode and the second electrode be increased, but also the interval can be controlled without affecting other elements, so the degree of freedom of the interval is improved. As a result, the most suitable value for the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on The distance between the pixel electrode and the common electrode, so the size, width and interval of the opening pattern can be freely set. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. In particular, in a display device using liquid crystal, it is possible to control liquid crystal molecules aligned parallel to the substrate in a direction parallel to the substrate (so-called parallel alignment). Therefore, the viewing angle can be enlarged by applying the most suitable electric field.

<p>3700Substrate</p><p>3701First electrode</p><p>3704Insulation film</p><p>3702Second electrode</p><p>3703Thin Film Transistor</p><p>3705Interlayer insulation film</p><p>108Source wiring</p><p>105Gate wiring</p><p>106Auxiliary wiring</p><p>121Thin Film Transistor</p><p>100Substrate</p><p>101First electrode</p><p>102Insulation film</p><p>103Semiconductor film</p><p>103a, 103bimpurity area</p><p>104Gate insulation film</p><p>Part 101d</p><p>105a, 105bGate electrode</p><p>103cPassage area</p><p>107The first interlayer insulating film</p><p>109Conductive film for connection</p><p>110Conductive film for connection</p><p>112Second electrode</p><p>111Second interlayer insulating film</p><p>112a, 112b, 112copen pattern</p><p>113First alignment film</p><p>114LCD</p><p>115Second alignment film</p><p>116Color filter</p><p>118Polarizer</p><p>119Polarizer</p><p>120Relative substrate</p><p>101aOpen pattern</p><p>112hOpen pattern</p><p>160Conductive film</p><p>170Conductive film</p><p>180Second gate wiring</p><p>180a, 180bSecond gate electrode</p><p>105cWiring for connection</p><p>123Semiconductor film</p><p>124a, 124bn-type semiconductor film</p><p>110aMetal film</p><p>130rRed color filter</p><p>130gGreen color filter</p><p>130bBlue color filter</p><p>150Pixel</p><p>152Source line drive circuit</p><p>154Gate line drive circuit</p><p>112dOpen pattern</p><p>112eOpen pattern</p><p>112fOpen pattern</p><p>112gOpen pattern</p><p>121Thin Film Transistor</p><p>122Thin Film Transistor</p><p>800Substrate</p><p>801First electrode</p><p>802Insulation film</p><p>803Crystalline semiconductor film</p><p>804Gate Insulation Film</p><p>805a, 805bfirst gate electrode</p><p>806a, 806bSecond gate electrode</p><p>807First wiring</p><p>809Impurities</p><p>810a, 810b, 810cfirst impurity area</p><p>811 impurity elements</p><p>812a, 812bresist pattern</p><p>813a, 813b, 813cSecond impurity area</p><p>814a, 814b, 814c third impurity area</p><p>815Insulation film</p><p>816Insulation film</p><p>817a, 817b, 817c, 817dcontact hole</p><p>808Second wiring</p><p>818First conductive film</p><p>819Second conductive film</p><p>820Photoresist film</p><p>840Mask</p><p>841a, 841b, 841cshading pattern</p><p>842a, 842b, 842c, 842dSemi-permeable membrane pattern</p><p>821a, 821b, 821c, 821dInsensitive parts</p><p>822a, 822b, 822c, 822dresist pattern</p><p>823a, 824asource wiring</p><p>823b, 824bDrain wiring</p><p>824cConductive film for connection</p><p>828Second electrode</p><p>825Thin Film Transistor</p><p>826First alignment film</p><p>827Thin Film Transistor</p><p>829Thin Film Transistor</p><p>854Gate signal line drive circuit area</p><p>838aFirst terminal electrode</p><p>838bSecond terminal electrode</p><p>833Columnar spacer</p><p>834Sealing material</p><p>853Sealed area</p><p>830Relative substrate</p><p>832Color filter</p><p>831Second alignment film</p><p>835a, 835b polarizing plate</p><p>837FPC</p><p>852External terminal connection area</p><p>856pixel area</p><p>857SOURCE SIGNAL LINE DRIVE CIRCUIT AREA</p><p>930Pixel</p><p>910Source Driver</p><p>920Gate Driver</p><p>912Thin Film Transistor</p><p>911Shift register</p><p>940Thin Film Transistor Group</p><p>950IC</p><p>960FPC</p><p>201First electrode</p><p>212Second electrode</p><p>221Top Gate Thin Film Transistor</p><p>200Substrate</p><p>202Insulation film</p><p>206Interlayer insulation film</p><p>207Interlayer insulation film</p><p>214Layer containing luminescent material</p><p>213Dielectric</p><p>220Second substrate</p><p>215Protection layer</p><p>224Layer containing luminescent material</p><p>2001Frame</p><p>2002Stent</p><p>2003Display</p><p>2004Speaker Department</p><p>2005Video input terminal</p><p>2101Main body</p><p>2102Display</p><p>2103Image receiving section</p><p>2104Operation keys</p><p>2105External port</p><p>2106Shutter</p><p>2201Main body</p><p>2202Frame</p><p>2203Display</p><p>2204Keyboard</p><p>2205External port</p><p>2206Positioning equipment</p><p>2301Main body</p><p>2302Display</p><p>2303Switch</p><p>2304Operation keys</p><p>2305Infrared port</p><p>2401Main body</p><p>2402Frame</p><p>2403Display</p><p>2404Display</p><p>2405Reading part of memory media</p><p>2406Operation keys</p><p>2407Speaker Department</p><p>2501Main body</p><p>2502Display</p><p>2503Operation keys</p><p>2601Main body</p><p>2602Display</p><p>2603Frame</p><p>2604External port</p><p>2605Remote control receiver</p><p>2606Image Receiver</p><p>2607Battery</p><p>2608Audio input section</p><p>2609Operation keys</p><p>2610Viewfinder</p><p>2701Main body</p><p>2702Frame</p><p>2703Display</p><p>2704Audio Input</p><p>2705Audio output</p><p>2706Operation keys</p><p>2707External port</p><p>2708antenna</p>

1A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 2, and FIG. 1B is a cross-sectional view cut along EF in FIG. 1A and a cross-sectional view cut along GH in FIG. 1A; A plan view of the structure of an FFS mode liquid crystal display device of Embodiment Mode 2, and FIG. 2B is a cross-sectional view cut along EF in FIG. 2A and a cross-sectional view cut along GH in FIG. 2A; 3B is a cross-sectional view cut along EF in FIG. 3A and a cross-sectional view cut along GH in FIG. 3A; FIG. 4A is a plan view illustrating the structure of an IPS mode liquid crystal display device according to Embodiment Mode 4. A plan view of the structure of the device, and FIG. 4B is a cross-sectional view cut along AB in FIG. 4A and a cross-sectional view cut along CD in FIG. 4A; , And FIG. 5B is a cross-sectional view cut along AB in FIG. 5A and a cross-sectional view cut along CD in FIG. 5A; 6A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 6, and FIG. 6B is a cross-sectional view cut along EF in FIG. 6A and a cross-sectional view cut along GH in FIG. 6A; A plan view of the structure of an FFS mode liquid crystal display device of Embodiment Mode 7, and FIG. 7B is a cross-sectional view cut along EF of FIG. 7A and a cross-sectional view cut along GH of FIG. 7A; A plan view of the structure of an FFS mode liquid crystal display device, and FIG. 8B is a cross-sectional view cut along EF in FIG. 8A and a cross-sectional view cut along GH in FIG. 8A; 9B is a cross-sectional view cut along EF in FIG. 9A and a cross-sectional view cut along GH in FIG. 9A; FIG. 10A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 10 10B is a cross-sectional view cut along EF in FIG. 10A and a cross-sectional view cut along GH in FIG. 10A; FIG. 11A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 11, and FIG. 11B is A cross-sectional view cut along EF in FIG. 11A and a cross-sectional view cut along GH in FIG. 11A; FIG. 12A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 12, and FIG. A cut cross-sectional view and a cross-sectional view cut along GH in FIG. 12A; FIG. 13A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 13, and FIG. 13B is a cross-sectional view cut along EF in FIG. 13A and A cross-sectional view cut along GH in FIG. 13A; 14A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 14, and FIG. 14B is a cross-sectional view cut along EF in FIG. 14A and a cross-sectional view cut along GH in FIG. 14A; A plan view of the structure of an FFS mode liquid crystal display device of Embodiment Mode 15, and FIG. 15B is a cross-sectional view cut along EF in FIG. 15A and a cross-sectional view cut along GH in FIG. 15A; A plan view of the structure of an FFS mode liquid crystal display device, and FIG. 16B is a cross-sectional view taken along EF in FIG. 16A and a cross-sectional view taken along GH in FIG. 16A; FIG. 17A is a diagram illustrating an FFS mode liquid crystal display according to Embodiment Mode 17. A plan view of the structure of the device, and FIG. 17B is a cross-sectional view cut along EF in FIG. 17A, a cross-sectional view cut along GH in FIG. 17A, and a cross-sectional view cut along IJ in FIG. A plan view of the structure of an FFS mode liquid crystal display device, and FIG. 18B is a cross-sectional view taken along EF in FIG. 18A and a cross-sectional view taken along GH in FIG. 18A; FIG. 19A is a diagram illustrating an FFS mode liquid crystal display according to Embodiment Mode 19. A plan view of the structure of the device, and FIG. 19B is a cross-sectional view cut along IJ in FIG. 19A and a cross-sectional view cut along KL in FIG. 19A; FIG. 20A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 20 , And FIG. 20B is a cross-sectional view cut along MN in FIG. 20A and a cross-sectional view cut along OP in FIG. Is to explain that according to the example model A cross-sectional view of the structure of the FFS mode liquid crystal display device of Formula 22; FIG. 22 is a cross-sectional view illustrating the structure of the FFS mode liquid crystal display device according to Embodiment Mode 23; FIG. 23 is a cross-sectional view illustrating the liquid crystal display device according to Embodiment Mode 24 FIG. 24A is a plan view of the liquid crystal display device shown in FIG. 23, and FIG. 24B is an enlarged view of the pixel portion of FIG. 24A; FIG. 25A is a plan view of a liquid crystal display device according to Embodiment Mode 25, and FIG. 25B is an enlarged view of the pixel portion of FIG. 25A; FIG. 26 is a cross-sectional view illustrating the structure of a liquid crystal display device according to Embodiment Mode 26; FIGS. 27A to 27D are electrodes illustrating an FFS method liquid crystal display device according to Embodiment Mode 27 Figs. 28A to 28D are plan views illustrating electrode shapes of an IPS mode liquid crystal display device according to Embodiment Mode 28; Fig. 29 is a circuit diagram illustrating a circuit structure of a liquid crystal display device according to Embodiment Mode 29; Figs. 30A and 30B is a circuit diagram illustrating a circuit structure of a liquid crystal display device according to embodiment mode 30; FIGS. 31A to 31E are cross-sectional views illustrating a method of manufacturing a liquid crystal module according to embodiment mode 31; FIGS. 32A to 32D are diagrams illustrating a method according to embodiment mode A cross-sectional view of a method of manufacturing a liquid crystal module of 31; FIG. 33A is a plan view of a liquid crystal module according to Embodiment Mode 31, 33B is a cross-sectional view cut along KL of FIG. 33A; FIGS. 34A and 34B are diagrams illustrating a liquid crystal display module according to Embodiment Mode 32; FIGS. 35A and 35B are diagrams illustrating a liquid crystal display module according to Embodiment Mode 32 36A to 36H are perspective views showing an electronic device according to Embodiment Mode 33; FIG. 37 is Embodiment Mode 1, and is a cross-sectional view illustrating the basic structure of the present invention; and FIGS. 38A and 38B are diagrams illustrating an embodiment according to an embodiment A cross-sectional view of the structure of the light-emitting device of Mode 34.

Hereinafter, an embodiment mode of the present invention will be explained with reference to the drawings. Note that the present invention can be implemented in a variety of different ways, and those skilled in the art can easily understand the fact that the methods and details can be transformed into various forms without departing from the spirit and scope of the present invention. . Therefore, the present invention should not be interpreted as being limited to only the content described in the embodiment mode.

Example Mode 1

Fig. 37 is a cross-sectional view for explaining the basic structure of the present invention. A first electrode 3701 is formed on the substrate 3700. The substrate 3700 is a glass substrate, a quartz substrate, a substrate made of an insulator such as alumina, and can withstand The heat-resistant plastic substrate, silicon substrate or metal substrate of the processing temperature of the post-processing. When used as a transmissive display device, the substrate 3700 preferably has light transmittance.

The first electrode 3701 is formed using a conductive film (for example, ITO: indium tin oxide) that transmits visible light.

An insulating film 3704 is formed on the substrate 3700 and the first electrode 3701. The insulating film 3704 is made of an insulating material containing oxygen or nitrogen such as silicon oxide (SiO_x), silicon nitride (SiN_x), silicon oxynitride (SiO_xN_y:X&gt;y), silicon oxynitride (SiN_xO_y: X&gt;y), etc., and any single-layer structure of these films or a laminated structure formed by laminating these films can be adopted. By providing the insulating film 3704, the diffusion of impurities from the substrate 3700 to the upper layer of the insulating film 3704 can be prevented.

In addition, a gate electrode, gate wiring, gate insulating film, etc. may also be provided between the substrate 3700 and the insulating film 3704. In particular, for example, the gate electrode and the gate wiring may also be formed by the same process as the first electrode 3701.

A thin film transistor 3703 is formed on the insulating film 3704. The thin film transistor 3703 may be a top gate type transistor or a bottom gate type transistor. The thin film transistor 3703 is arranged near the first electrode 3701 or the second electrode 3702.

An interlayer insulating film 3705 is formed on the thin film transistor 3703 and the insulating film 3704. The interlayer insulating film 3705 may also be a single layer or multiple layers.

As a material constituting the interlayer insulating film 3705, an inorganic material or an organic material can be used. As the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, silicone, or polysilazane can be used Wait. As an inorganic material, an insulating material containing oxygen or nitrogen such as silicon oxide (SiO_x), silicon nitride (SiN_x), silicon oxynitride (SiO_xN_y:X&gt;y), silicon oxynitride (SiN_xO_y: X&gt;y) etc. In addition, it may be a laminated film in which these films are laminated, or it may be a laminated film in which an organic material and an inorganic material are combined.

In the case of using an inorganic material as the interlayer insulating film 3705, the intrusion of moisture or impurities can be prevented. Especially when a layer containing nitrogen is used, the barrier ability to moisture or impurities is high. In addition, in the case of using an organic material as the interlayer insulating film 3705, the surface can be flattened. Therefore, it is effective for the layer formed thereon. For example, the layer formed on the organic material can also be flattened, so that the alignment disorder of the liquid crystal or the disconnection of the wiring can be avoided, or the resist can be accurately formed.

A second electrode 3702 is formed on the interlayer insulating film 3705. As the second electrode 3702, a material with high light transmission is preferably used, for example, one or more elements selected from the group consisting of indium (In), tin (Sn), and oxygen (O) to be selected from the group. One or more of the elements are compounds or alloy materials (for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide added with silicon oxide (ITSO)). In particular, IZO is preferably used because it is easy to process IZO and easy to form a fine and accurate shape. However, the present invention is not limited to this.

Either one of the first electrode 3701 and the second electrode 3702 serves as an electrode that provides different signals to each pixel according to an image signal, a so-called pixel electrode, and is electrically connected to the source or drain of the thin film transistor 3703. pole. In addition, the remaining one of the first electrode 3701 and the second electrode 3702 One is used as a common electrode.

An opening pattern (slot) is formed in the second electrode 3702. The opening pattern is used to generate an electric field between the first electrode 3701 and the second electrode 3702 in a direction substantially parallel to the substrate. As long as an electric field including a direction substantially parallel to the substrate can be generated, the opening pattern can be formed in various shapes. Here, roughly parallel means parallel with some errors. Therefore, it can deviate from the parallel direction unless it negatively affects the display. For example, there may be an error of ±10 degrees, and preferably an error of about ±5 degrees.

Therefore, as the opening pattern, not only a closed opening pattern such as a slot can be used, but also a space located between the conductor patterns and not formed with the conductor pattern, such as the comb-tooth portion of the comb-shaped electrode. The space between each other, etc. In other words, as long as there is a gap or interval between the electrodes.

In this way, by generating an electric field between the second electrode 3702 and the first electrode 3701, the alignment state of the liquid crystal molecules can be controlled.

As described above, in this embodiment mode, the insulating film 3704 is formed between the first electrode 3701 and the thin film transistor 3703. Therefore, by adjusting the thickness of the insulating film 3704, the degree of freedom of the interval between the first electrode 3701 and the second electrode 3702 is improved. As a result, since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be set freely. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. Especially when using liquid crystal display In the device, the liquid crystal molecules aligned parallel to the substrate can be controlled in a direction parallel to the substrate (so-called parallel alignment), so the viewing angle can be enlarged by applying the most suitable electric field.

Even if the thickness of the insulating film 3704 is changed, it does not affect the operation of the transistor, etc., so the thickness can be freely controlled. Therefore, the interval between the first electrode 3701 and the second electrode 3702 can be freely expanded.

In addition, in FIG. 37, only the second electrode 3702 is formed to have an opening pattern, but the first electrode 3701 may also have an opening pattern. Therefore, an electric field roughly parallel to the substrate can be generated to control the liquid crystal molecules.

In addition, in the case where the first electrode 3701 is formed, unless the transmittance is 100%, the amount of light transmission decreases. However, in the case where the first electrode 3701 is formed with an opening pattern, light is not attenuated in the portion of the opening pattern, so the amount of light transmitted as a whole increases. As a result, the brightness can be improved or the power consumption can be reduced.

Example Mode 2

1A is a plan view illustrating the structure of a liquid crystal display device according to Embodiment Mode 2 of the present invention, which represents one pixel. The liquid crystal display device is a device that controls the orientation of liquid crystals in an FFS mode. In FIG. 1A, a plurality of source wirings 108 are arranged parallel to each other (in the drawing, extending in the longitudinal direction) and separated from each other. The plurality of gate wirings 105 are arranged to extend in a direction substantially orthogonal to the source wiring 108 (in the figure, the lateral direction) and to be separated from each other. The auxiliary wiring 106 is arranged at a position close to each of the plurality of gate wirings 105, and in a direction substantially parallel to the gate wiring 105, that is, with The source wiring 108 extends in a substantially orthogonal direction (in the drawing, the left-right direction). The source wiring 108, the auxiliary wiring 106, and the gate wiring 105 surround a space substantially the same as the rectangle, and the pixel electrodes of the liquid crystal display device are arranged in this space. The thin film transistor 121 driving the pixel electrode is arranged in the upper left corner of the figure. The plurality of pixel electrodes and thin film transistors are arranged in a matrix shape.

In addition, the gate wiring 105, the auxiliary wiring 106, and the source wiring 108 are made of the following materials: selected from aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd) ), chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag), copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc (Zn) ), niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As), gallium (Ga), indium (In), tin (Sn), oxygen (O) One or more elements; a compound or alloy material containing one or more elements selected from the group (such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide added with silicon oxide) Oxide (ITSO), zinc oxide (ZnO), aluminum neodymium (Al-Nd), magnesium silver (Mg-Ag), etc.); a combination of these compounds, etc. Or, it is composed of a compound (silicide) of them and silicon (for example, aluminum silicon, molybdenum silicon, nickel silicide, etc.), or a compound of them and nitrogen (for example, titanium nitride, tantalum nitride, molybdenum nitride, etc.). In addition, silicon (Si) may also contain many n-type impurities (phosphorus, etc.) or p-type impurities (boron, etc.). If these impurities are contained, the conductivity is improved, and it has the same function as a general conductor, so it is easy to use as a wiring or electrode. In addition, silicon may be single crystal, polycrystalline (polycrystalline silicon), or amorphous (amorphous silicon). By using monocrystalline silicon or polycrystalline silicon, the resistance can be reduced. By using amorphous silicon, it can be simplified Manufacturing process. As for aluminum or silver, its conductivity is high, so signal delay can be reduced, and because it is easily etched, it is easy to process and can be microfabricated. As for copper, its conductivity is high, so the signal delay can be reduced. In addition, even if molybdenum is in contact with oxide semiconductors such as ITO or IZO, or silicon, problems such as material defects do not occur, and molybdenum is easily processed and etched, and its heat resistance is high, so molybdenum is preferably used. In addition, even if titanium is in contact with oxide semiconductors such as ITO or IZO, or silicon, problems such as material defects do not occur, and its heat resistance is high, so titanium is preferably used. In addition, tungsten is preferably used because of its high heat resistance. In addition, neodymium is preferably used because of its high heat resistance. In particular, it is preferable to use an alloy of neodymium and aluminum because its heat resistance is improved and aluminum is not prone to hillocks. In addition, since silicon can be formed at the same time as the semiconductor film possessed by the transistor is formed, and its heat resistance is high, silicon is preferably used. In addition, indium tin oxide (ITO), indium zinc oxide (IZO), silicon oxide-added indium tin oxide (ITSO), zinc oxide (ZnO), and silicon (Si) are preferably used because they are It has light transmittance and can be applied to the part that transmits light. For example, they are used as pixel electrodes or common electrodes.

In addition, the wiring or the electrode may be composed of a single layer or a stacked layer of the above-mentioned materials. By adopting a single-layer structure, the manufacturing process can be simplified and the number of manufacturing days can be reduced, resulting in lower costs. On the other hand, when a multilayer structure is adopted, the advantages of various materials can be used and their disadvantages can be reduced, thereby forming high-performance wiring or electrodes. For example, by including a low-resistance material (such as aluminum) in the multilayer structure, the resistance of the wiring can be reduced. In addition, by including materials with high heat resistance, for example, when inserting materials that do not have high heat resistance In the case of a laminated structure of materials with high heat resistance but other advantages, the heat resistance of wiring or electrodes can be improved as a whole. For example, it is preferable to use a laminated structure in which a layer containing aluminum is inserted between layers containing molybdenum or titanium. In addition, if the wiring or electrode is in direct contact with another wiring or electrode made of a different material, they may adversely affect each other. For example, the material of one wiring or electrode may enter another wiring or electrode, thereby changing its properties, thereby failing to achieve the desired purpose, or a problem occurs in manufacturing and the manufacturing process cannot be completed normally. In this case, the problem can be solved by inserting another layer or covering with it. For example, in the case where indium tin oxide (ITO) is in contact with aluminum, it is preferable to insert titanium or molybdenum therebetween. In the case where silicon and aluminum are in contact, it is preferable to insert titanium or molybdenum therebetween.

In addition, it is preferable to use a material having higher heat resistance than the source wiring 108 to form the gate wiring 105. This is because the gate wiring 105 is in a high temperature state during the manufacturing process in many cases compared to the source wiring 108.

In addition, it is preferable to use a material having a resistance lower than that of the gate wiring 105 to form the source wiring 108. This is because although only the two value signals of the H signal and the L signal are supplied to the gate wiring 105, the analog signal is supplied to the source wiring 108 and contributes to display. Therefore, it is preferable to use a low-resistance material to form the source wiring 108 to provide a signal of the correct size.

In addition, the auxiliary wiring 106 may not be provided, but by providing the auxiliary wiring 106, the potential of the common electrode in each pixel can be stabilized. In addition, in FIGS. 1A and 1B, although the auxiliary wiring 106 is arranged to be substantially parallel to the gate line, the present invention is not limited to this. The auxiliary wiring 106 may be arranged to be substantially parallel to the source wiring 108. In this case, the auxiliary The auxiliary wiring 106 is preferably made of the same material as the source wiring 108.

However, the auxiliary wiring 106 is preferably arranged to be approximately parallel to the gate line, because the aperture ratio can be increased and the layout can be efficiently performed.

FIG. 1B is a cross-sectional view cut along EF in FIG. 1A and a cross-sectional view cut along GH in FIG. 1A. As shown in FIGS. 1A and 1B, a first electrode 101 for controlling the orientation of the liquid crystal is arranged on a part of the substrate 100. However, another layer may be arranged between the substrate 100 and the first electrode 101.

The substrate 100 is a glass substrate, a quartz substrate, a substrate made of an insulator such as alumina, a heat-resistant plastic substrate, a silicon substrate, or a metal substrate that can withstand the processing temperature of post-processing. In addition, it may be polysilicon.

When used as a transmissive display device, the substrate 100 preferably has light transmittance.

The first electrode 101 is composed of a light-transmitting conductive film (for example, an ITO (Indium Tin Oxide) film, an IZO (Indium Zinc Oxide) film, a ZnO film, or a polysilicon film or an amorphous silicon film added with impurities), It serves as a common electrode. In addition, as shown in FIG. 1A, the first electrode 101 is connected in the up-down direction. By connecting the first electrode 101 in the up-down direction, the resistance of the common electrode can be reduced, and a predetermined voltage can be easily applied.

An insulating film 102 is formed on the first electrode 101 and the substrate 100. The insulating film 102 is a film that prevents impurities from diffusing from the substrate 100, and serves as a base film. The insulating film 102 is made of an insulating material containing oxygen or nitrogen such as silicon oxide (SiO_x), silicon nitride (SiN_x), silicon oxynitride (SiO_xN_y:X&gt;y), silicon oxynitride (SiN_xO_y: X&gt;y), etc., and a laminated film formed by laminating these films can be used. In addition, between the substrate 100 and the first electrode 101 An insulating film that serves the same function as the insulating film 102 may be formed.

A semiconductor film 103 is formed on the insulating film 102. In the semiconductor film 103, an impurity region 103a serving as a source of the thin film transistor 121 and an impurity region 103b serving as a drain are formed. The impurity regions 103a and 103b are, for example, n-type impurity regions, but may also be p-type impurity regions. Examples of impurities imparting n-type include phosphorus (P) and arsenic (As). Examples of impurities imparting p-type include boron (B) and gallium (Ga).

As shown by the dashed line in FIG. 1A, the first electrode 101 has a shape with a rectangular corner (upper left corner of the drawing) missing, and is formed on substantially the entire surface of the pixel. In addition, a thin film transistor 121 is arranged in the rectangular portion 101d where one corner is missing. By arranging the thin film transistor 121 in the portion 101d where the corner is missing, a region effective for display in the pixel can be formed more efficiently. In other words, the aperture ratio can be increased. In addition, the semiconductor film 103 is, for example, a polycrystalline silicon film, but may also be another semiconductor film (for example, an amorphous silicon film, a single crystal silicon film, an organic semiconductor film, or a carbon nanotube).

The gate insulating film 104 of the thin film transistor 121 is formed to cover the semiconductor film 103.

Note that the gate insulating film 104 may be formed only in the vicinity of the channel region and not in other parts. In addition, the gate insulating film 104 may partially have different thicknesses and laminated structures. For example, sometimes the thickness is thick and the number of layers is large only in the vicinity of the channel, and the thickness is thin and the number of layers is small in other parts. With this structure, it is easy to control the addition of impurities to the source region or the drain region. In addition, by changing the thickness or the number of layers of the gate insulating film 104 located near the channel, the amount of impurity added to the semiconductor film can be partially different. , To form the LDD area. By forming the LDD region, the leakage current can be reduced, and the generation of hot carriers can be suppressed to improve reliability.

The gate insulating film 104 is made of an insulating material containing oxygen or nitrogen such as silicon oxide (SiO_x), silicon nitride (SiN_x), silicon oxynitride (SiO_xN_y:X&gt;y), silicon oxynitride (SiN_xO_y: X&gt;y), etc. In addition, a laminated film formed by laminating these films can also be used. On the gate insulating film 104, gate electrodes 105a and 105b located above the semiconductor film 103 are formed. As shown in FIGS. 1A and 1B, the gate electrodes 105a and 105b are the same wiring layers as the auxiliary wiring 106 and the gate wiring 105, and are electrically connected to the gate wiring 105. The semiconductor film 103 located under the gate electrodes 105a and 105b serves as a channel region 103c. In addition, the same impurities as the impurity regions 103a and 103b are added to the semiconductor film 103 located between the two channel regions 103c. In addition, in this embodiment mode, a multi-gate structure having two gate electrodes is adopted, but the present invention is not limited to this structure.

A first interlayer insulating film 107 is formed on the gate insulating film 104 and the gate electrodes 105a and 105b. The first interlayer insulating film 107 can be formed using an inorganic material or an organic material. As the organic material, polyimide, acrylic, polyimide, polyimide, resist, silicone, polysilazane, or the like can be used. As an inorganic material, an insulating material containing oxygen or nitrogen such as silicon oxide (SiO_x), silicon nitride (SiN_x), silicon oxynitride (SiO_xN_y:X&gt;y), silicon oxynitride (SiN_xO_y: X&gt;y) etc. In addition, it may be a laminated film in which these films are laminated, or it may be a laminated film in which an organic material and an inorganic material are combined. Impurity regions are formed in the insulating film 102, the gate insulating film 104, and the first interlayer insulating film 107 The contact hole on 103a, the contact hole on the impurity region 103b, the contact hole on the first electrode 101, and the contact hole on the auxiliary wiring 106. On the first interlayer insulating film 107, a source wiring 108, a connection conductive film 109, and a connection conductive film 110 are formed.

In addition, by using inorganic materials as the insulating film, the intrusion of moisture or impurities can be prevented. Especially when a layer containing nitrogen is used, the barrier ability to moisture or impurities is high.

In addition, by using an organic material as an insulating film, the surface can be flattened. Therefore, it is effective for the layer formed thereon. For example, the layer formed on the organic material can be flattened, and therefore the alignment disorder of the liquid crystal can be avoided.

The source wiring 108 is located on the impurity region 103a, and a part of it is embedded in the contact hole to be electrically connected to the impurity region 103a. Therefore, a part of the source wiring 108 is a source electrode. As for the conductive film for connection 109, a part of it is embedded in the contact hole to be electrically connected to the impurity region 103b. In this way, by arranging the conductive film 109 for connection, since it is not necessary to make the contact hole deep, it can be accurately formed.

Note that, as shown in FIG. 2B, the second electrode 112 and the impurity region 103b may be directly connected without sandwiching the conductive film 109 for connection shown in FIG. 1B. In this case, the contact hole used to connect the second electrode 112 and the impurity region 103b needs to be deep, but the conductive film 109 for connection is not required, so the region can be used as an open region for image display. Therefore, the aperture ratio can be increased, and the power consumption can be reduced.

The conductive film 110 for connection is located on the auxiliary wiring 106, and a part of it is embedded in the contact hole to be electrically connected to the auxiliary wiring 106 and the first electrode, respectively 101. In this manner, the first electrode 101 is electrically connected to the auxiliary wiring 106 with the connection conductive film 110 interposed therebetween. In addition, a plurality of conductive films 110 for connection may be provided. By adopting this structure, the potential of the first electrode 101 can be stabilized. In addition, the first electrode 101 and the auxiliary wiring 106 are connected with the connection conductive film 110 in between, so that the number of times of forming contact holes can be reduced, and therefore the manufacturing process can be simplified.

Here, although the same material is used to form the connection conductive film 110 while forming the source wiring 108, the present invention is not limited to this. The conductive film 110 for connection may be formed using the same material at the same time as the second electrode 112 is formed.

A second interlayer insulating film 111 is formed on the source wiring 108, the connecting conductive film 109, the connecting conductive film 110, and the first interlayer insulating film 107. In addition, the second interlayer insulating film 111 may not be formed. The second interlayer insulating film 111 can be formed using an inorganic material or an organic material. As the organic material, polyimide, acrylic, polyimide, polyimide, resist, or silicone, polysilazane, or the like can be used. As an inorganic material, an insulating material containing oxygen or nitrogen such as silicon oxide (SiO_x), silicon nitride (SiN_x), silicon oxynitride (SiO_xN_y:X&gt;y), silicon oxynitride (SiN_xO_y: X&gt;y) etc. In addition, it may be a laminated film in which these films are laminated, or it may be a laminated film in which an organic material and an inorganic material are combined. A contact hole on the conductive film 109 for connection is formed in the second interlayer insulating film 111.

A second electrode 112 that controls the orientation of the liquid crystal is formed on the second interlayer insulating film 111. The second electrode 112 is used as a voltage to be supplied to each pixel separately The pixel electrode is composed of the following materials: ITO (Indium Tin Oxide), ZnO (Zinc Oxide), IZO (Indium Zinc Oxide) formed by using a target that mixes 2 to 20 wt% of ZnO into indium oxide Wait. A part of the second electrode 112 is located on the conductive film 109 for connection, and a part of the part is embedded in the contact hole to be electrically connected to the conductive film 109 for connection. In this manner, the second electrode 112 is electrically connected to the impurity region 103 b of the thin film transistor 121 with the conductive film 109 for connection therebetween.

In addition, as shown in FIGS. 2A and 2B, the second electrode 112 is directly connected to the impurity region 103b of the thin film transistor 121 when the conductive film 109 for connection is not formed.

As shown in FIGS. 2A and 2B and FIG. 1A, the second electrode 112 is substantially rectangular, which is located above the first electrode 101, and the second electrode 112 has a plurality of opening patterns 112a and 112b. As an example of the opening patterns 112a and 112b, a shape in which a plurality of slits are parallel to each other can be cited. In the example shown in this figure, the opening patterns 112a and 112b are inclined with respect to the source wiring 108, and the directions of the opening pattern 112a located in the upper half of the picture of the pixel and the opening pattern 112b located in the lower half of the drawing are different from each other. . By forming the opening patterns 112a and 112b, an electric field having a component parallel to the substrate between the first electrode 101 and the second electrode 112 is generated on the second electrode 112. Therefore, by controlling the potential of the second electrode 112, the orientation of the liquid crystal as described below can be controlled.

In addition, by making the directions of the opening patterns different from each other like the opening patterns 112a and 112b, it is possible to provide a plurality of regions with different moving directions of liquid crystal molecules. In other words, a multi-region structure can be adopted. Multi-region The structure can prevent abnormal display of images when viewed in a certain direction, and as a result, the viewing angle can be improved.

In addition, the shape of the opening pattern is not limited to the shape of this embodiment mode. The shape of the opening pattern shown in Embodiment Mode 3 and later may also be adopted. In other words, as the opening pattern, a space in which a conductor pattern is not formed, such as a space between comb tooth portions in a comb tooth electrode, can be used.

In addition, as shown in FIG. 1A, when viewed in a direction perpendicular to the substrate 100, the first electrode 101 serving as a common electrode extends to the outside of the second electrode 112 serving as a pixel electrode. By adopting this structure, it is possible to suppress the signal transmitted to other pixels through the source wiring 108 from affecting the second electrode 112 which becomes a floating state after receiving the signal. As a result, image defects such as crosstalk can be reduced. In addition, the present invention is not limited to this electrode structure, and the common electrode can also be arranged inside the pixel electrode.

A first alignment film 113 and liquid crystal 114 are laminated on the second interlayer insulating film 111 and the second electrode 112. As the liquid crystal 114, ferroelectric liquid crystal (FLC), nematic liquid crystal, smectic liquid crystal, liquid crystal in parallel alignment, liquid crystal in vertical alignment, or the like can be used. An opposed substrate 120 is arranged on the liquid crystal 114 with a second alignment film 115 and a color filter 116 sandwiched therebetween. In addition, the substrate 100 and the opposite substrate 120 are provided with polarizing plates 119 and 118, respectively.

In addition, in addition to the polarizing plate, a phase difference plate, a λ/4 plate, etc. are also arranged in many cases.

In addition, in the above-mentioned structure, the first electrode 101, the portion of the second electrode 112 where the opening pattern is not formed, and the insulating films located between them form a capacitance. By forming the capacitor, the protection can be increased Hold capacitance.

Next, an example of the manufacturing method of the semiconductor device and the liquid crystal display device of the present invention will be described. First, a light-transmitting conductive film (for example, an ITO (Indium Tin Oxide) film, an IZO film, a ZnO film, or a Si film) is formed on the substrate 100. Then, a photoresist film (not shown) is formed on the conductive film, and the photoresist film is exposed and developed. Therefore, the resist pattern is formed on the conductive film. Next, the conductive film is etched using the resist pattern as a mask. By performing this treatment, the conductive film is selectively removed to form the first electrode 101 on the substrate 100. Then, the resist pattern is removed.

Next, an insulating film 102 is formed on the substrate 100 and the first electrode 101. The insulating film 102 is preferably as thick as the gate insulating film 104 described below. Then, a semiconductor film (for example, a polysilicon film) is formed on the insulating film 102, and etching using a resist pattern is performed to selectively remove the semiconductor film. Therefore, the island-shaped semiconductor film 103 is formed on the insulating film 102.

Next, a gate insulating film 104 is formed on the semiconductor film 103 and the insulating film 102. The gate insulating film 104 is, for example, a silicon oxynitride film or a silicon oxide film, and is formed by a plasma CVD method. In addition, the gate insulating film 104 may be formed of a silicon nitride film or a multilayer film containing silicon nitride and silicon oxide. Next, a conductive film is formed on the gate insulating film 104, and etching is performed using the resist pattern as a mask to selectively remove the conductive film. Therefore, the gate electrodes 105a and 105b are formed on the gate insulating film 104 located on the semiconductor film 103. In addition, by performing such processing, the gate wiring 105 and the auxiliary wiring 106 are formed.

In addition, as described above, by forming the auxiliary wiring 106, the potential of the first electrode 101 can be stabilized in each pixel. In addition, the auxiliary wiring 106 may not be formed. In addition, the auxiliary wiring 106 may also be formed in another layer (for example, the same layer as the source wiring 108, the same layer as the first electrode 101, or the same layer as the second electrode 112), or may be formed in multiple layers. In the layers. In addition, in FIG. 1B, the auxiliary wiring 106 extends in a direction orthogonal to the source wiring 108, but the auxiliary wiring 106 may extend in the same direction as the source wiring 108.

In addition, the conductive film is composed of the following materials: selected from aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium (Cr), nickel (Ni) , Platinum (Pt), gold (Au), silver (Ag), copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc (Zn), niobium (Nb), silicon (Si) , Phosphorus (P), boron (B), arsenic (As), gallium (Ga), indium (In), tin (Sn), oxygen (O) and one or more elements in the group consisting of; to be selected from the group consisting of One or more elements in the group are compounds or alloy materials (such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide with silicon oxide (ITSO), zinc oxide (ZnO) , Aluminum neodymium (Al-Nd), magnesium silver (Mg-Ag), etc.); a combination of these compounds, etc. Or, it is composed of a compound (silicide) of them and silicon (for example, aluminum silicon, molybdenum silicon, nickel silicide, etc.), or a compound of them and nitrogen (for example, titanium nitride, tantalum nitride, molybdenum nitride, etc.). In addition, silicon (Si) may also contain many n-type impurities (phosphorus, etc.) or p-type impurities (boron, etc.).

In addition, wiring or electrodes can also be constructed of a single layer or stacked layers of the above-mentioned materials. become. By adopting a single-layer structure, the manufacturing process can be simplified and the number of manufacturing days can be reduced, resulting in lower costs. On the other hand, when a multilayer structure is adopted, the advantages of various materials can be used and their disadvantages can be reduced, thereby forming high-performance wiring or electrodes. For example, by including a low-resistance material (such as aluminum) in the multilayer structure, the resistance of the wiring can be reduced. In addition, by including a high heat resistance material, for example, when a laminated structure in which a material that does not have high heat resistance but has other advantages is inserted between the high heat resistance materials, the heat resistance of the wiring or the electrode can be improved as a whole. For example, it is preferable to use a laminated structure in which a layer containing aluminum is inserted between layers containing molybdenum or titanium. In addition, in a case where there is a portion directly in contact with wiring or electrodes of other materials, they may adversely affect each other. For example, the material of one wiring or electrode may enter the material of another wiring or electrode, thereby changing its properties, thereby failing to achieve the desired purpose, or a problem occurs in manufacturing and the manufacturing process cannot be completed normally. In this case, the problem can be solved by inserting another layer or covering with it. For example, in the case where indium tin oxide (ITO) is in contact with aluminum, it is preferable to insert titanium or molybdenum therebetween. In the case where silicon and aluminum are in contact, it is preferable to insert titanium or molybdenum therebetween.

Next, impurities are added to the semiconductor film 103 using the gate electrodes 105a and 105b as masks. Therefore, the impurity regions 103 a and 103 b and the impurity regions located between the gate electrodes 105 a and 105 b are formed in the semiconductor film 103. In addition, the n-type impurity element and the p-type impurity element may be added separately, or the n-type impurity element and the p-type impurity element may also be added together in a specific region. Note that in the latter case, the addition amount of any one of the n-type impurity element and the p-type impurity element is set to be more than the other . In addition, in this process, a resist pattern can also be used as a mask.

At this time, the thickness or stack structure of the gate insulating film 104 can also be changed to form the LDD region. Regarding the portion where the LDD region is to be formed, it is only necessary to thicken the gate insulating film 104 or increase the number of layers. As a result, the added amount of impurities is reduced, so the LDD region can be easily formed.

In addition, in the case of adding impurities to the semiconductor film 103, the impurities may be added before forming the gate electrodes 105a and 105b, such as before or after forming the gate insulating film 104. In this case, the resist pattern is used as a mask. Therefore, a capacitance can be formed between the electrode formed in the same layer as the gate electrode and the semiconductor film added with impurities. Since the gate insulating film is formed between the electrode in the same layer as the gate and the semiconductor film to which the impurity is added, a large capacitance with a thin thickness can be formed.

Next, the first interlayer insulating film 107 and each contact hole are formed. Then, a conductive film (for example, a metal film) is formed on the first interlayer insulating film 107 and in each contact hole, and etching using a resist pattern is performed to selectively remove the conductive film. Therefore, the source wiring 108, the conductive film for connection 109, and the conductive film for connection 110 are formed.

Next, the second interlayer insulating film 111 and each contact hole are formed. Then, a light-transmitting conductive film (for example, an ITO film, an IZO film, a ZnO film, or a Si film) is formed on the second interlayer insulating film 111 and in each contact hole, and etching selection using a resist pattern is performed The conductive film is removed sexually. Therefore, the second electrode 112 is formed.

In addition, the positions of the contact hole in which a part of the conductive film for connection 109 is embedded and the contact hole in which a part of the second electrode 112 is embedded are different from each other. By adopting this structure, even if portions of the connection conductive film 109 and the second electrode 112 on the contact hole are recessed, the recesses do not overlap. Therefore, the deep recessed portion is not formed in the second electrode 112, and thus the defect of the resist pattern can be suppressed. Then, the resist pattern is removed.

Next, the first alignment film 113 is formed, and the liquid crystal 114 is sealed between the opposite substrate 120 on which the second alignment film 115 is formed. Then, polarizing plates 118 and 119, a retardation plate (not shown), an optical film (not shown) such as a λ/4 plate, a diffusion plate, or the like are formed on the opposite substrate 120 or the substrate 100 on the side that does not contact the liquid crystal 114. Optical films such as prism plates, etc. Furthermore, back light or front light is also provided. As the backlight, either a direct type or an edge type can be used. As the light source, a cold cathode tube or LED (light emitting diode) can be used. As the LED, a white LED may be used, or LEDs of each color (for example, white, red, blue, green, cyan, magenta, yellow, etc.) may be combined. By using LEDs, since the wavelength peak of light is sharp, the color purity can be improved. In the case of the edge light type, a light guide plate is arranged to realize a uniform surface light source. In this way, a liquid crystal display device is formed.

In addition, the liquid crystal display device may only mean the substrate, the counter substrate, and the portion of the liquid crystal sandwiched between them. In addition, as a liquid crystal display device, an optical film such as a polarizing plate or a retardation plate may be arranged. In addition to this, it may also include a diffuser plate, a prism plate, a light source (cold cathode tube or LED, etc.), a light guide plate, and the like.

As described above, according to Embodiment Mode 2 of the present invention, in a liquid crystal display device in which the orientation of liquid crystals is controlled by the FFS method, the first electrode 101 is arranged On the substrate 100, that is, under the insulating film 102. Therefore, compared to the case where the first electrode 101 is formed on the insulating film 102, the interval between the first electrode 101 and the second electrode 112 can be increased. Therefore, the degree of freedom of the interval between the first electrode 101 and the second electrode 112 is improved. As a result, since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be set freely. Also, the gradient of the electric field applied between the electrodes can be controlled, and therefore, for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. In other words, in a display device using liquid crystal, the liquid crystal molecules aligned parallel to the substrate can be controlled in a direction parallel to the substrate (so-called parallel alignment), and therefore the viewing angle can be enlarged by applying the most suitable electric field.

Even if the thickness of the insulating film 102 is changed, the operation of the transistor and the like are not affected, so the thickness can be freely controlled. Therefore, the interval between the first electrode 101 and the second electrode 112 can be freely expanded.

By making the insulating film 102 thick, the interval between the first electrode 101 and the second electrode 112 is increased even if the gate insulating film 104 is made thin, so that an appropriate electric field is applied to the liquid crystal 114. In the case of making the gate insulating film 104 thin, the current driving capability of the thin film transistor 121 can be improved, and the gate capacitance can be increased.

In addition, the gate electrode 105a and the gate wiring 105 may be formed in different layers, or different materials may be used to form the gate electrode 105a and the gate wiring 105.

In addition, the connection conductive film 109 is arranged in the same position as the source wiring 108 However, it may be arranged in another wiring layer (for example, the same layer as the gate wiring 105, the first electrode 101, or the second electrode 112). In addition, the gate insulating film 104 may not be formed on the entire surface.

In addition, the contact hole in which a part of the second electrode 112 is embedded may be formed at a position overlapping with the contact hole in which a part of the connection conductive film 109 is embedded. In this case, since two contact holes can be formed in one area, layout can be efficiently performed. Therefore, the aperture ratio of the pixel can be increased.

In addition, in this embodiment mode, the so-called top gate type thin film transistor in which the gate electrode is arranged on the channel region has been described, but the present invention is not limited to this. It is also possible to use a so-called bottom gate type thin film transistor in which gate electrodes are arranged under the channel region, or a thin film transistor in which gate electrodes are arranged above and below the channel region.

The liquid crystal display device may be a transmissive liquid crystal display device, a semi-transmissive liquid crystal display device, or a reflective liquid crystal display device. The semi-transmissive liquid crystal display device uses, for example, a light-transmitting film (e.g., ITO (Indium Tin Oxide) film, IZO (Indium Zinc Oxide) film, ZnO film, or impurity-added polycrystalline silicon film or amorphous silicon film) This is achieved by forming the first electrode 101 and forming the second electrode 112 using a metal film. In addition, a light-transmitting film may be used to form the second electrode 112, and a metal film may be used to form a part of the first electrode 101 and a light-transmitting film may be used to form another part of the first electrode 101 to realize a semi-transmissive liquid crystal display device. In addition, in a reflective liquid crystal display device, by using a metal film as the first electrode 101, the first electrode 101 can function as a reflection plate. In addition, insulation may be formed between the substrate 100 and the first electrode 101 A film (for example, a silicon oxide film) to form a metal film as a reflective film in the insulating film. Furthermore, a reflective sheet (for example, an aluminum film) as a reflective film may be provided on the outer side of the substrate 100. In addition, the content described here can be equally applied to each embodiment mode described below.

Example Mode 3

3A is a plan view illustrating the structure of a liquid crystal display device according to Embodiment Mode 3, and FIG. 3B is a cross-sectional view cut along EF of FIG. 3A and a cross-sectional view cut along GH of FIG. 3A. The structure of this embodiment mode is roughly the same as that of embodiment mode 2, and the differences from embodiment mode 2 are as follows: the first electrode 101 is electrically connected to the impurity region 103b of the thin film transistor 121 and serves as a pixel electrode; the second electrode 112 is electrically connected to the impurity region 103b of the thin film transistor 121; Connected to the auxiliary wiring 106 and used as a common electrode; when viewed in a direction perpendicular to the substrate 100, the second electrode 112 extends to the outside of the first electrode 101; and the first electrode 101 and the second electrode 112 and the respective wiring Connection structure. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 2. Therefore, the content described in Embodiment Mode 2 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 2, and the description thereof will be omitted.

In this embodiment mode, contact holes on the first electrode 101 are formed in the first interlayer insulating film 107, the gate insulating film 104, and the insulating film 102, and the first interlayer insulating film 107 and the gate The electrode insulating film 104 has contact holes formed on the impurity regions 103a and 103b of the thin film transistor 121. In addition, in the first interlayer insulating film 107 is formed an auxiliary The contact hole on the wiring 106.

The connection conductive film 109 extends from the impurity region 103b to the first electrode 101, and a part of it is embedded in the contact hole to be electrically connected to the impurity region 103b and the first electrode 101, respectively. In this manner, the first electrode 101 is electrically connected to the impurity region 103b through the conductive film 109 for connection. In addition, as for the conductive film 110 for connection, a part of the conductive film 110 is embedded in a contact hole to be electrically connected to the auxiliary wiring 106.

The first electrode 101 may be electrically connected to the impurity region 103b by a conductive film for connection formed in the same layer as the second electrode 112.

A contact hole on the conductive film 110 for connection is formed in the second interlayer insulating film 111. As for the second electrode 112, a part of it is embedded in the contact hole to be electrically connected to the conductive film 110 for connection. In this manner, the second electrode 112 is electrically connected to the auxiliary wiring 106 through the conductive film 110 for connection. In addition, as shown in FIG. 3A, the upper and lower second electrode 112 portions are connected to each other.

In addition, the auxiliary wiring 106 and the second electrode 112 may be directly connected without disposing the conductive film 110 for connection.

In addition, in this embodiment mode, the conductive films 110 for connection are respectively formed on three corners of the four corners of the first electrode 101 except for the corners located in the vicinity of the thin film transistor.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, in this embodiment mode, the conductive film 110 for connection may not be provided. In this case, contact holes located on the auxiliary wiring 106 are formed in the first and second interlayer insulating films 107 and 111. By embedding a part of the second electrode 112 in the contact hole, the auxiliary wiring is electrically connected 106 and second electrode 112. In this case, the aperture ratio can be increased. However, when the conductive film 110 for connection is provided, even if the contact holes formed in the first and second interlayer insulating films 107 and 111 do not overlap, the conductive film 110 for connection can solve the problem of non-overlapping. .

In addition, as shown in FIGS. 3A and 3B, the first electrode 101 is used as a pixel electrode, and the second electrode 112 is used as a common electrode, and the common electrode is configured to be closer to the liquid crystal than the pixel electrode. As a result, even if the voltage of the pixel electrode changes from pixel to pixel, the voltage of the common electrode is stable, and therefore, the electric field of the portion where the liquid crystal is provided is not easily affected by adjacent pixels, and crosstalk can be reduced. For example, the signals input to adjacent pixels may vary greatly depending on the displayed image, but like this embodiment mode, by arranging the common electrode close to the liquid crystal, crosstalk can be prevented.

In addition, in FIGS. 3A and 3B, only one pixel is shown. However, in reality, a plurality of pixels are arranged in a matrix shape. In this case, the second electrodes 112 of each pixel may also be connected to each other. By adopting this structure, the resistance can be reduced to apply a sufficient voltage to the second electrode 112.

In addition, this embodiment mode represents an example in which the content shown in Embodiment Mode 2 is partially changed and improved, or the content is deformed. Therefore, the content shown in Embodiment Mode 2 can be applied to this Embodiment Mode, or the content can also be combined.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

Embodiment Mode 4

4A is a plan view illustrating the structure of a liquid crystal display device according to Embodiment Mode 4 of the present invention, and FIG. 4B is a cross-sectional view cut along AB in FIG. 4A and a cross-sectional view cut along CD in FIG. 4A. The structure of the liquid crystal display device according to this embodiment mode is substantially the same as that of Embodiment Mode 3, and the differences from Embodiment Mode 3 are as follows: the shape of the opening pattern 112c formed in the second electrode 112 is different; and the first electrode 101 It has an opening pattern 101a. In other words, the liquid crystal display device according to this embodiment mode is a device that controls the alignment of liquid crystals in an IPS method, and when viewed in a direction perpendicular to the liquid crystal display device, the pixel electrodes and the common electrodes are staggered and substantially parallel in the main part. In the FFS method, the lower electrode of the pixel electrode and the common electrode does not have an opening pattern. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 3. Therefore, the content described in Embodiment Mode 3 can also be applied to this Embodiment Mode. In addition, since the content described in Embodiment Mode 2 can be applied to Embodiment Mode 3, the content described in Embodiment Mode 2 can also be applied to Embodiment Mode 4. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 3, and the description thereof will be omitted.

The opening patterns 112c and 101a respectively extend in a zigzag shape in the up-down direction in FIG. 4A. The opening pattern 101a is located under and around the area of the second electrode 112 where the opening pattern 112c is not formed.

In addition, by making the directions of the opening patterns different from each other like the opening patterns 112c and 101a, it is possible to provide a plurality of regions with different moving directions of liquid crystal molecules. In other words, a multi-region structure can be adopted. Multi-region The structure can prevent abnormal display of images when viewed in a certain direction, and as a result, the viewing angle can be improved.

According to this embodiment mode, the same effect as in Embodiment Mode 3 can also be obtained. In addition, in this embodiment mode, the shape of the second electrode 112 and the shape of the opening pattern 112c, and the shape of the first electrode 101 and the opening pattern 101a may also be the shape and the opening of the second electrode 112 in Embodiment Mode 2. The shape of the pattern 112c. Note that when viewed in a direction perpendicular to the substrate 100, the opening patterns 101a and 112c need to be arranged so as to be staggered and substantially parallel except for the peripheral portions of the first electrode 101 and the second electrode 112. However, the present invention is not limited to this.

In addition, in the FFS type liquid crystal display devices shown in Embodiment Mode 2 and Embodiment Mode 3, the shape of the second electrode 112 and the shape of the opening patterns 112a and 112b may be the shapes shown in this embodiment mode.

In addition, by overlapping the first electrode 101, the second electrode 112, and the auxiliary wiring 106, a capacitor can be formed and used as a holding capacitor.

In addition, this embodiment mode represents an example in which the contents shown in Embodiment Mode 2 and Embodiment Mode 3 are partially changed and improved, or the contents are modified. Therefore, the contents shown in Embodiment Mode 2 and Embodiment Mode 3 may be applied to this embodiment mode, or the contents may be combined.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

Embodiment Mode 5

5A is a plan view illustrating the structure of an IPS mode liquid crystal display device according to Embodiment Mode 5 of the present invention, and FIG. 5B is a cross-sectional view cut along AB in FIG. 5A and a cross-sectional view cut along CD in FIG. 5A. The structure of this embodiment mode is approximately the same as that of embodiment mode 4, and the differences from embodiment mode 4 are as follows: the first electrode 101 is electrically connected to the auxiliary wiring 106 and serves as a common electrode; the second electrode 112 is electrically connected to the connection The conductive film 109 is used as a pixel electrode; and the connection structure of the first electrode 101 and the second electrode 112 and each wiring. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 4. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 4, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 1 to 4 can also be applied to this Embodiment Mode.

In this embodiment mode, the conductive film 110 for connection shown in Embodiment Mode 3 is not formed. However, contact holes on the first electrode 101 are formed in the gate insulating film 104 and the insulating film 102. Regarding the auxiliary wiring 106, a part thereof is embedded in the contact hole to be electrically connected to the first electrode 101.

In addition, the contact hole is formed before forming the gate electrodes 105a and 105b.

By configuring like this, the layout can be efficiently performed and the aperture ratio can be increased.

In addition, a contact hole on the conductive film 110 for connection is not formed in the second interlayer insulating film 111. However, the shape in the second interlayer insulating film 111 A contact hole is formed on the conductive film 109 for connection. Regarding the second electrode 112, a part of the second electrode 112 is embedded in the contact hole to be electrically connected to the connection conductive film 109.

In addition, although the second electrode 112 is electrically connected to the conductive film 109 for connection, the present invention is not limited to this. It is also possible to electrically connect to the impurity region 103b without forming the connection conductive film 109.

In addition, in this embodiment mode, the shape of the second electrode 112 and the shape of the opening pattern 112c, and the shape of the first electrode 101 and the opening pattern 101a may also be the shape and the opening of the second electrode 112 in Embodiment Mode 2. The shape of the pattern 112c. Note that when viewed in a direction perpendicular to the substrate 100, the opening patterns 101a and 112c need to be arranged so as to be staggered and substantially parallel except for the peripheral portions of the first electrode 101 and the second electrode 112.

In addition, by making the directions of the opening patterns different from each other like the opening patterns 112c and 101a, it is possible to provide a plurality of regions with different moving directions of liquid crystal molecules. In other words, a multi-region structure can be adopted. By adopting a multi-area structure, it is possible to prevent abnormal display of images when viewed in a certain direction, and as a result, the viewing angle can be improved.

In addition, this embodiment mode represents an example in which the contents shown in the embodiment modes 2 to 4 are partially changed and improved, or the contents are deformed. Therefore, the contents shown in Embodiment Modes 2 to 4 may be applied to this embodiment mode, or the contents may be combined.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

Embodiment Mode 6

6A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 6 of the present invention, and FIG. 6B is a cross-sectional view cut along EF in FIG. 6A and a cross-sectional view cut along GH in FIG. 6A. The structure of this embodiment mode is substantially the same as that of the FFS method liquid crystal display device shown in Embodiment Mode 2, and the differences from Embodiment Mode 2 are as follows: the source wiring 108 is bent; the first electrode 101 and the second electrode 112 are also It is bent according to the source wiring 108; and the opening pattern 112h that the second electrode 112 has extends along the source wiring 108 and is bent. Therefore, the content described in Embodiment Mode 2 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 2, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 5 can also be applied to this Embodiment Mode.

By making the directions of the opening patterns different from each other like the opening pattern 112h of FIGS. 6A and 6B, it is possible to provide a plurality of regions with different moving directions of liquid crystal molecules. In other words, a multi-region structure can be adopted. By adopting a multi-area structure, it is possible to prevent abnormal display of images when viewed in a certain direction, and as a result, the viewing angle can be improved.

Furthermore, the source wiring 108 is also bent along the opening pattern 112h, so that layout can be efficiently performed and the opening ratio can be increased.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, in this embodiment mode, the shape of the opening pattern of the second electrode 112 may also be the shape shown in Embodiment Mode 2 or Embodiment Mode 4.

In addition, this embodiment mode represents an example of a case where the contents shown in Embodiment Modes 2 to 5 are partially changed and improved, or the contents are deformed. Therefore, the contents shown in Embodiment Modes 2 to 5 can be applied to this embodiment mode, or the contents can also be combined.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

Embodiment Mode 7

7A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 7 of the present invention, and FIG. 7B is a cross-sectional view cut along EF in FIG. 7A and a cross-sectional view cut along GH in FIG. 7A. The structure of this embodiment mode is substantially the same as that of the FFS method liquid crystal display device shown in embodiment mode 3. The difference from embodiment mode 3 is as follows: the source wiring 108 is bent; the first electrode 101 and the second electrode 112 are also It is bent according to the source wiring 108; and the opening pattern 112h that the second electrode 112 has extends along the source wiring 108 and is bent. Therefore, the content described in Embodiment Mode 3 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 3, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 6 can also be applied to this Embodiment Mode.

By making the directions of the opening patterns different from each other like the opening pattern 112h of FIGS. 7A and 7B, it is possible to provide a plurality of regions with different moving directions of liquid crystal molecules. In other words, a multi-region structure can be adopted. Multi-region The structure can prevent abnormal display of images when viewed in a certain direction, and as a result, the viewing angle can be improved.

Furthermore, the source wiring 108 is also bent along the opening pattern 112h, so that layout can be efficiently performed and the opening ratio can be increased.

According to this embodiment mode, the same effect as in Embodiment Mode 3 can also be obtained. In addition, in this embodiment mode, the shape of the opening pattern of the second electrode 112 may also be the shape shown in Embodiment Mode 2 or Embodiment Mode 4.

In addition, this embodiment mode represents an example in which the contents shown in Embodiment Modes 2 to 6 are partially changed and improved, or the contents are modified. Therefore, the contents shown in Embodiment Modes 2 to 6 can be applied to this embodiment mode, or the contents can also be combined.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

Embodiment Mode 8

8A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 8 of the present invention, and FIG. 8B is a cross-sectional view cut along EF in FIG. 8A and a cross-sectional view cut along GH in FIG. 8A. The structure of this embodiment mode is substantially the same as that of embodiment mode 2, but the difference from embodiment mode 2 is as follows: a conductive film 160 is formed on the entire surface under the semiconductor film 103 on the substrate 100. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 2, wherein The difference from Embodiment Mode 2 is as follows: The conductive film 160 is formed by the same process as the first electrode 101. Therefore, the content described in Embodiment Mode 2 can also be applied to this Embodiment Mode. In addition, the conductive film 160 is not electrically connected to any components, and it is in a floating state. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 2, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 7 can also be applied to this Embodiment Mode.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, since the conductive film 160 under the semiconductor film 103 is formed on the substrate 100, the insulating film 102 may also be composed of a single layer of a silicon oxide film. In the case where the insulating film 102 is composed of a single layer of a silicon oxide film and the conductive film 160 is not formed, the diffusion of impurities from the substrate 100 to the semiconductor film 103 may not be sufficiently suppressed. Therefore, a silicon nitride film needs to be used for the insulating film 102. However, if the silicon nitride film and the semiconductor film 103 are in contact, the operation of the thin film transistor 121 becomes unstable. In this embodiment mode, by forming the conductive film 160, even if the insulating film 102 is composed of a single layer of a silicon oxide film, the diffusion of impurities from the substrate 100 to the semiconductor film 103 can be sufficiently suppressed. In addition, since the insulating film 102 is composed of a single layer of a silicon oxide film, the operation of the thin film transistor 121 can be stabilized.

In addition, the insulating film 102 may also be composed of a stacked structure of a silicon oxide film and a silicon nitride film. Therefore, even if the silicon oxide film contains impurities such as iron, the diffusion of the impurities into the semiconductor film 103 can be suppressed. In addition, the intrusion of impurities from the substrate 100 can be blocked more efficiently.

In addition, the FFS method shown in Embodiment Mode 3 can also be used The conductive film 160 is formed in the display device and the IPS type liquid crystal display device shown in Embodiment Modes 4 and 5, respectively, so as to obtain the same effects as in this embodiment mode. In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4.

In addition, by making the directions of the opening patterns different from each other like the opening patterns 112a and 112b, it is possible to provide a plurality of regions with different moving directions of liquid crystal molecules. In other words, a multi-region structure can be adopted. By adopting a multi-area structure, it is possible to prevent abnormal display of images when viewed in a certain direction, and as a result, the viewing angle can be improved.

In addition, this embodiment mode represents an example of a case where the content shown in the embodiment modes 2 to 7 is partially changed and improved, or the content is deformed. Therefore, the contents shown in Embodiment Modes 2 to 7 can be applied to this embodiment mode, or the contents can also be combined.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

Example Mode 9

9A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 9 of the present invention, and FIG. 9B is a cross-sectional view cut along EF in FIG. 9A and a cross-sectional view cut along GH in FIG. 9A. The structure of this embodiment mode is approximately the same as that of embodiment mode 2, and the difference from embodiment mode 2 is as follows: a part of the first electrode 101 extends to the semiconductor film Below the impurity region 103b in 103. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 2. Therefore, the content described in Embodiment Mode 2 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 2, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 8 can also be applied to this Embodiment Mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4. In addition, in the FFS method liquid crystal display device shown in Embodiment Mode 6 and the IPS method liquid crystal display device shown in Embodiment Mode 5, it is also possible to position a part of the first electrode 101 in the same manner as in this embodiment mode. Below the impurity region 103b.

In addition, in the FFS type liquid crystal display device shown in Embodiment Modes 3 and 7, and the IPS type liquid crystal display device shown in Embodiment Mode 4, it is also possible to set the first electrode 101 in the same manner as in this embodiment mode. A part is located below the impurity region 103b. By adopting this structure, the voltage of the first electrode 101 is the same as the voltage of the impurity region 103b, so it is not easily affected by noise or the like, so that the voltage of the impurity region 103b is stabilized. As a result, the interval between the opening patterns 112a can be reduced, and the electric field can be flattened. It is applied stably, so it is easy to control the liquid crystal molecules. In addition, by reducing the interval of the opening patterns 112a, the voltage can be reduced, and the power consumption can be reduced. In addition, the phenomenon of electric field concentration can also be alleviated, so the reliability of the thin film transistor 121 is also improved.

In addition, in this embodiment mode, the portion of the first electrode 101 located under the impurity region 103b may be separated from the main body of the first electrode 101, and the portion may be electrically connected to the conductive film 109 for connection. By adopting this structure, the above-mentioned effects can also be obtained. In other words, the liquid crystal molecules can be easily controlled, power consumption can be reduced, and the reliability of the thin film transistor 121 can be improved.

Embodiment Mode 10

10A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 10 of the present invention, and FIG. 10B is a cross-sectional view cut along EF in FIG. 10A and a cross-sectional view cut along GH in FIG. 10A. The structure of this embodiment mode is approximately the same as that of embodiment mode 9, and the differences from embodiment mode 9 are as follows: a part of the first electrode 101 extends to the impurity region 103b in the semiconductor film 103, two channel regions 103c, and two Under the impurity region between the channel regions 103c. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 9. Therefore, the content described in Embodiment Mode 9 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 9, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 9 can also be applied to this Example mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

According to this embodiment mode, the same effect as in Embodiment Mode 9 can also be obtained. In addition, in the FFS type liquid crystal display device shown in Embodiment Mode 6 and the IPS type liquid crystal display device shown in Embodiment Mode 5, it is also possible to extend a part of the first electrode 101 in the same manner as in this embodiment mode. To the bottom of the impurity region 103b, the two channel regions 103c, and the impurity region between the two channel regions 103c.

In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4. .

In addition, in the FFS type liquid crystal display device shown in Embodiment Modes 3 and 7, and the IPS type liquid crystal display device shown in Embodiment Mode 4, it is also possible to set the first electrode 101 in the same manner as in this embodiment mode. A part extends below the impurity region 103b, the two channel regions 103c, and the impurity region between the two channel regions 103c. By adopting this structure, the voltage of the first electrode 101 is the same as the voltage of the impurity region 103b, so it is not easily affected by noise or the like, so that the voltage of the impurity region 103b is stabilized. As a result, the interval between the opening patterns 112a can be reduced, and the electric field is applied smoothly, so it is easy to control the liquid crystal molecules. In addition, by reducing the interval of the opening patterns 112a, the voltage can be reduced, and therefore the power consumption can be reduced. In addition, the phenomenon of electric field concentration can also be alleviated, so the reliability of the thin film transistor 121 is also improved.

In addition, in this embodiment mode, the part of the first electrode 101 located below the impurity region 103b, the two channel regions 103c, and the impurity region between the two channel regions 103c may be separated from the first electrode 101 The main body is separated, and the part is electrically connected to the conductive film 109 for connection. By adopting this structure, the above-mentioned effects can also be obtained. In other words, the liquid crystal molecules can be easily controlled, power consumption can be reduced, and the reliability of the thin film transistor 121 can be improved.

Embodiment Mode 11

11A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 11 of the present invention, and FIG. 11B is a cross-sectional view cut along EF in FIG. 11A and a cross-sectional view cut along GH in FIG. 11A. The structure of this embodiment mode is substantially the same as that of embodiment mode 10, and the difference from embodiment mode 10 is as follows: a part of the first electrode 101 extends below the entire surface of the semiconductor film 103. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 10. Therefore, the content described in Embodiment Mode 10 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 10, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 10 can also be applied to this embodiment mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

According to this embodiment mode, the same effect as in Embodiment Mode 10 can also be obtained. In addition, according to the same effect as in Embodiment Mode 8, even if the insulating film 102 is composed of a single layer of a silicon oxide film, the diffusion of impurities from the substrate 100 to the semiconductor film 103 can be sufficiently suppressed. In addition, since the insulating film 102 is composed of a single layer of a silicon oxide film, the operation of the thin film transistor 121 can be stabilized.

In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4. In addition, in the FFS method liquid crystal display device shown in Embodiment Mode 6 and the IPS method liquid crystal display device shown in Embodiment Mode 5, it is also possible to extend a part of the first electrode 101 in the same manner as in this embodiment mode. To below the entire surface of the semiconductor film 103.

In addition, in the liquid crystal display devices of the FFS method shown in Embodiment Modes 3 and 7, and the liquid crystal display device of the IPS method shown in Embodiment Mode 4, it is also possible to set the first electrode 101 in the same manner as in this embodiment mode. A part extends below the entire surface of the semiconductor film 103. By adopting this structure, the voltage of the first electrode 101 is the same as the voltage of the impurity region 103b, and therefore, is not easily affected by noise or the like, so that the voltage of the impurity region 103b is stabilized. As a result, the interval between the opening patterns 112a can be reduced, and the electric field is applied smoothly, so it is easy to control the liquid crystal molecules. In addition, by reducing the interval of the opening patterns 112a, the voltage can be reduced, and therefore the power consumption can be reduced. In addition, the phenomenon of electric field concentration can also be alleviated, so the reliability of the thin film transistor 121 is also improved.

In addition, in this embodiment mode, it is also possible to make the first electrode 101 The portion of the semiconductor film 103 under the semiconductor film 103 is separated from the main body of the first electrode 101, and the portion is electrically connected to the conductive film 109 for connection. By adopting this structure, the above-mentioned effects can also be obtained. In other words, the liquid crystal molecules can be easily controlled, power consumption can be reduced, and the reliability of the thin film transistor 121 can be improved.

Embodiment Mode 12

12A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 12 of the present invention, and FIG. 12B is a cross-sectional view cut along EF in FIG. 12A and a cross-sectional view cut along GH in FIG. 12A. The structure of this embodiment mode is substantially the same as that of embodiment mode 2, but the difference from embodiment mode 2 is as follows: the semiconductor film 103 is formed on the substrate 100 under the impurity region 103a electrically connected to the source wiring 108 And the conductive film 170 is electrically connected to the source wiring 108. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of Embodiment Mode 2, and the difference from Embodiment Mode 2 is as follows: The conductive film 170 is formed by the same process as the first electrode 101. Therefore, the content described in Embodiment Mode 2 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structural parts as in Embodiment Mode 2, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 11 can also be applied to this Embodiment Mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to combine the knots in the drawings Structural factors to form a new structure.

Contact holes on the conductive film 170 are formed in the first interlayer insulating film 107, the gate insulating film 104, and the insulating film 102. Regarding the source wiring 108, a part thereof is embedded in the contact hole to be electrically connected to the conductive film 170.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, the same voltage as the impurity region 103 a is applied to the conductive film 170 located under the impurity region 103 a electrically connected to the source wiring 108. Therefore, the voltage of the impurity region 103a is stabilized.

In addition, the liquid crystal display devices of the FFS system shown in Embodiment Modes 3, 6, 7, 9, and 10, and the liquid crystal display devices of the IPS system shown in Embodiment Modes 4 and 5, can also be formed in accordance with this embodiment. Conductive film 170 of the same pattern. By adopting this structure, it is also possible to obtain the same effects as in this embodiment mode, such as stabilizing the voltage of the impurity region 103a. In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4.

Embodiment Mode 13

13A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 13 of the present invention, and FIG. 13B is a cross-sectional view cut along EF in FIG. 13A and a cross-sectional view cut along GH in FIG. 13A. The structure of this embodiment mode is almost the same as that of embodiment mode 12. The difference from embodiment mode 12 is as follows: the conductive film 170 is formed in the semiconductor film 103 under the channel region 103c and the impurity region 103a adjacent to the impurity region 103a , And a part of the first electrode 101 is formed in the half Below the channel region 103c and the impurity region 103b adjacent to the impurity region 103b in the conductive film 103. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 12. Therefore, the content described in Embodiment Mode 12 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as those of Embodiment Mode 12, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 12 can also be applied to this embodiment mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings. According to this embodiment mode, the same effects as in Embodiment Modes 12 and 9 can also be obtained. In addition, in the liquid crystal display devices of the FFS method shown in Embodiment Modes 3, 6, and 7, and the liquid crystal display devices of the IPS method shown in Embodiment Modes 4 and 5, it is also possible to form the same The conductive film 170 is formed, and the first electrode 101 is formed into the same shape as the present embodiment mode. By adopting this structure, the same effect as in this embodiment mode can also be obtained. In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4.

Embodiment Mode 14

14A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 14 of the present invention, and FIG. 14B is a cross-sectional view cut along EF in FIG. 14A and a cross-sectional view cut along GH in FIG. 14A. The structure of this embodiment mode is roughly the same as that of embodiment mode 12, but the differences from embodiment mode 12 are as follows: the conductive film 170 is formed in the impurity region 103a in the semiconductor film 103, two channel regions 103c, and two channel regions Below the impurity region between 103c. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 12. Therefore, the content described in Embodiment Mode 12 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as those of Embodiment Mode 12, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 13 can also be applied to this Embodiment Mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

According to this embodiment mode, it is also possible to obtain the same effect as the embodiment mode 12 such as stabilizing the voltage of the impurity region 103a. In addition, the liquid crystal display devices of the FFS method shown in Embodiment Modes 3, 6, 7, and 9, and the liquid crystal display devices of the IPS method shown in Embodiment Modes 4 and 5, can also be formed in the same manner as in this embodiment mode. The same conductive film 170. By adopting this structure, it is also possible to obtain the same effects as in this embodiment mode, such as stabilizing the voltage of the impurity region 103a. In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4.

Embodiment Mode 15

15A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 15 of the present invention, and FIG. 15B is a cross-sectional view cut along EF in FIG. 15A and a cross-sectional view cut along GH in FIG. 15A. The structure of this embodiment mode is substantially the same as that of embodiment mode 14, and the difference from embodiment mode 14 is as follows: the conductive film 170 is formed under the entire surface of the semiconductor film 103. In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of the embodiment mode 14. Hereinafter, the same reference numerals are used to denote the same structures as those of Embodiment Mode 14, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 14 can also be applied to this Embodiment Mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

According to this embodiment mode, it is also possible to obtain the same effects as in Embodiment Mode 14, such as stabilizing the voltage of the impurity region 103a. In addition, in the liquid crystal display devices of the FFS system shown in Embodiment Modes 3, 6, and 7, and the liquid crystal display devices of the IPS system shown in Embodiment Modes 4 and 5, it is also possible to form the same Conductive film 170. By adopting this structure, it is also possible to obtain the same effects as in this embodiment mode, such as stabilizing the voltage of the impurity region 103a. In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4.

Embodiment Mode 16

16A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 16 of the present invention, and FIG. 16B is a cross-sectional view cut along EF in FIG. 16A and a cross-sectional view cut along GH in FIG. 16A. The structure of this embodiment mode is substantially the same as that of embodiment mode 2, and the difference from embodiment mode 2 is as follows: a second gate wiring 180 and second gate electrodes 180a and 180b are formed on the substrate 100. When viewed in a direction substantially perpendicular to the substrate 100, the second gate wiring 180 and the second gate electrodes 180a and 180b substantially overlap the gate wiring 105 and the gate electrodes 105a and 105b.

In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of embodiment mode 2, and the difference from embodiment mode 2 is as follows: the second gate wiring 180 is formed by the same process as the first electrode 101 , And second gate electrodes 180a and 180b. Therefore, the content described in Embodiment Mode 2 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as in Embodiment Mode 2, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 15 can also be applied to this Embodiment Mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, the two channel regions 103c of the semiconductor film 103 are respectively It is sandwiched between the gate electrode 105a and the second gate electrode 180a, and between the gate electrode 105b and the second gate electrode 180b. Therefore, in essence, the channel area is increased by a factor of 2, and thus the amount of current flowing through the thin film transistor 121 is increased.

In addition, the liquid crystal display devices of the FFS method shown in Embodiment Modes 3, 6, 7, 9, and 12, and the liquid crystal display devices of the IPS method shown in Embodiment Modes 4 and 5 can also be combined with this embodiment. In the same manner, the second gate wiring 180 and the second gate electrodes 180a and 180b are formed by the same process as the first electrode 101. By adopting this structure, the same effect as in this embodiment mode can also be obtained. In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4.

Embodiment Mode 17

17A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 17 of the present invention, and FIG. 17B is a cross-sectional view cut along EF in FIG. 17A, a cross-sectional view cut along GH in FIG. 17A, and FIG. 17A A cross-sectional view of the IJ cut. The structure of this embodiment mode is almost the same as that of embodiment mode 16, but the difference from embodiment mode 16 is as follows: the gate wiring 105 is not formed, and the gate electrodes 105a and 105b are electrically connected to the second embodiment by the connection wiring 105c. Two-gate wiring 108. Therefore, the content described in Embodiment Mode 16 can also be applied to this Embodiment Mode. The connection wiring 105c is formed in the same wiring layer as the gate electrodes 105a and 105b.

Therefore, the contents described in Embodiment Modes 2 to 16 can also be applied to this embodiment mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

A contact hole on the second gate wiring 180 is formed in the insulating film 102 and the gate insulating film 104. Regarding the connection wiring 105c, a part of it is inserted into the contact hole and electrically connected to the second gate wiring 180.

In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of embodiment mode 2, and the difference from embodiment mode 2 is as follows: the connection wiring 105c is formed by the same process as the gate electrodes 105a and 105b . Hereinafter, the same reference numerals are used to denote the same structures as in Embodiment Mode 2, and the description thereof will be omitted.

According to this embodiment mode, the same effect as in Embodiment Mode 16 can also be obtained. In addition, the liquid crystal display devices of the FFS method shown in Embodiment Modes 3, 6, 7, 9, and 12, and the liquid crystal display devices of the IPS method shown in Embodiment Modes 4 and 5, can also be used in accordance with this embodiment. The following structure has the same pattern: the second gate wiring 180 and the second gate electrodes 180a and 180b are formed by the same process as the first electrode 101, and the gate electrodes 105a and 105b are electrically connected by the connection wiring 105c To the second gate wiring 180, the gate wiring 105 is not formed. By adopting this structure, the same effect as in this embodiment mode can also be obtained. In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4.

Embodiment Mode 18

18A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 18 of the present invention, and FIG. 18B is a cross-sectional view cut along EF in FIG. 18A and a cross-sectional view cut along GH in FIG. 18A. The structure of this embodiment mode is substantially the same as that of embodiment mode 2, and the difference from embodiment mode 2 is as follows: the thin film transistor 121 is a bottom gate type transistor. Therefore, the content described in Embodiment Mode 2 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as in Embodiment Mode 2, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 17 can also be applied to this Embodiment Mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

In this embodiment mode, the gate electrodes 105a and 105b, the auxiliary wiring 106, and the gate wiring 105 are formed on the substrate 100, and the gate insulating film 104 is formed on the substrate 100, the gate electrodes 105a and 105b, and the auxiliary wiring 106. , And on the gate wiring 105. In addition, the semiconductor film 103 is formed on the gate insulating film 104.

Next, a method of manufacturing a liquid crystal display device according to this embodiment mode will be described. First, the first electrode 101 and the insulating film 102 are formed on the substrate 100. Then, a conductive film is formed on the insulating film 102.

In addition, the conductive film is composed of the following materials: selected from aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), One or more elements in the group consisting of chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), and silver (Ag); containing one or more elements selected from the group as a component A compound or a combination of the compound; or, a compound (silicide) of one or more elements selected from the group and silicon. In addition, silicon (Si) added with n-type impurities can also be used.

Next, etching using a resist pattern is performed to selectively remove the conductive film. Therefore, the gate electrodes 105a and 105b, the auxiliary wiring 106, and the gate wiring 105 are formed on the insulating film 102. Then, the resist pattern is removed. Next, a gate insulating film 104 is formed.

Next, a semiconductor film is formed on the gate insulating film 104, and etching using a resist pattern is performed to selectively remove the semiconductor film. Thus, the semiconductor film 103 is formed. Then, the resist pattern is removed.

Next, a resist pattern is formed on the semiconductor film 103, and impurities are added to the semiconductor film 103 using the resist pattern as a mask. Therefore, impurity regions 103a and 103b and an impurity region located between the gate electrode 105a and the gate electrode 105b are formed. In addition, in the case where the substrate 100 is made of a transparent material such as glass, etc., there may be a case in which when a resist pattern is formed, the gate wiring is used as an exposure pattern to be exposed from the back surface of the substrate 100. A mask for exposure is used to form a resist pattern. In this case, since the exposure mask is not used, the number of processes can be reduced, and therefore the manufacturing cost can be reduced. In addition, the resist pattern can be formed in a self-aligned manner, so the deviation of the resist pattern can be suppressed, and there is an advantage that the deviation is not taken into consideration. The subsequent processing is the same as in Embodiment Mode 2.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, in the FFS mode or IPS mode liquid crystal display devices shown in Embodiment Modes 3 to 14, a bottom gate type thin film transistor having the same structure as in this embodiment mode can also be used as a thin film transistor for driving pixels. . In addition, in this embodiment mode, the shape of the second electrode 112 and the opening pattern 112a may be the shape shown in Embodiment Mode 4.

Embodiment Mode 19

19A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 19 of the present invention, and FIG. 19B is a cross-sectional view cut along IJ in FIG. 19A and a cross-sectional view cut along KL in FIG. 19A. The structure of the liquid crystal display device according to this embodiment mode is substantially the same as that of embodiment mode 2, and the difference from embodiment mode 2 is as follows: the structure of the thin film transistor that controls the second electrode 112 serving as the pixel electrode is different; There is a second interlayer insulating film 111; the second electrode 112 and the first alignment film 113 are formed on the first interlayer insulating film 107; the source wiring 108 and the connection conductive film 109 are formed on the gate insulating film 104; and The conductive film 110 for connection is formed in the same layer as the second electrode 112. Hereinafter, the same reference numerals are used to denote the same structures as in Embodiment Mode 2, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 18 can also be applied to this embodiment mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

In this embodiment mode, the thin film transistor 122 is a bottom gate type transistor, so the gate insulating film 104 is formed on the gate wiring 105. A semiconductor film 123 serving as a channel region is formed on the gate insulating film 104. The semiconductor film 123 is, for example, an amorphous silicon film.

The semiconductor film 123 is electrically connected to the source wiring 108 through the n-type semiconductor film 124a, and is electrically connected to the connection conductive film 109 through the n-type semiconductor film 124b. The n-type semiconductor films 124a and 124b are, for example, polysilicon films added with phosphorus or arsenic, and are used as source or drain.

Next, a method of manufacturing a liquid crystal display device according to this embodiment mode will be described. First, the first electrode 101 and the insulating film 102 are formed on the substrate 100. Then, a conductive film is formed on the insulating film 102.

In addition, the conductive film is composed of the following materials: selected from aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium (Cr), nickel (Ni) One or more elements in the group consisting of, platinum (Pt), gold (Au), and silver (Ag); a compound with one or more elements selected from the group as a component or a combination of the compounds Or, a compound (silicide) of one or more elements selected from the group and silicon. In addition, silicon (Si) added with n-type impurities can also be used.

Next, etching using a resist pattern is performed to selectively remove the conductive film. Therefore, the gate wiring 105 and the auxiliary wiring 106 are formed on the insulating film 102. Then, the resist pattern is removed. Next, a gate insulating film 104 is formed.

Next, a semiconductor film is formed on the gate insulating film 104 by, for example, a CVD method, and etching using a resist pattern is performed to selectively remove all the films. Narrate Semiconductor film. Thus, the semiconductor film 123 is formed. Then, the resist pattern is removed.

Next, a semiconductor film is formed on the semiconductor film 123 and the gate insulating film 104, and n-type impurities are added to the semiconductor film. Then, etching using a resist pattern is performed to selectively remove the semiconductor film. Therefore, the n-type semiconductor films 124a and 124b are formed on the semiconductor film 123. After that, the resist pattern is removed.

Next, a conductive film is formed on the semiconductor film 123, the n-type semiconductor films 124a and 124b, and the gate insulating film 104, and etching using a resist pattern is performed to selectively remove the conductive film. Therefore, the source wiring 108 and the connection conductive film 109 are formed. Then, the resist pattern is removed.

Next, a first interlayer insulating film 107 is formed. Then, a contact hole on the conductive film 109 for connection is formed in the first interlayer insulating film 107. In addition, in this process, the contact hole located on the auxiliary wiring 106 is formed in the first interlayer insulating film 107 and the gate insulating film 104, and the contact hole located on the first electrode 101 is formed in the first interlayer insulating film 107, the gate insulating film 104, and the insulating film 102.

Next, a light-transmitting conductive film (for example, an ITO film, an IZO film, a ZnO film, or a Si film) is formed on the first interlayer insulating film 107 and in each contact hole, and etching using a resist pattern is performed The conductive film is selectively removed. Therefore, the second electrode 112 and the conductive film 110 for connection are formed. Then, a first alignment film 113 is formed on the first interlayer film 107, the second electrode 112, and the connection conductive film 110. The subsequent processing is the same as the manufacturing method of the liquid crystal display device according to Embodiment Mode 2.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, the source wiring 108 and the connection conductive film 109 may be directly connected to the semiconductor film 123 without forming the n-type semiconductor films 124a and 124b. In addition, the shape of the opening pattern of the second electrode 112 may be the same as that of Embodiment Mode 5.

In addition, in the liquid crystal display devices of the FFS method shown in Embodiment Modes 6 to 18 and the liquid crystal display device of the IPS method shown in Embodiment Mode 5, the structure of the thin film transistor can also be changed in the same manner as in this embodiment mode. To form the second electrode 112 and the first alignment film 113 on the first interlayer insulating film 107 without forming the second interlayer insulating film 111, the source wiring 108 and the conductive film for connection are formed on the gate insulating film 104 109, and the conductive film 110 for connection is formed in the same layer as the second electrode 112.

Embodiment Mode 20

20A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 20 of the present invention, and FIG. 20B is a cross-sectional view cut along MN in FIG. 20A and a cross-sectional view cut along OP in FIG. 20A. The structure of this embodiment mode is almost the same as that of embodiment mode 19, but the differences from embodiment mode 19 are as follows: the conductive film for connection 109 and the first electrode 101 are electrically connected by the conductive film for connection 110; the second electrode 112 is connected To the auxiliary wiring 106; and when viewed in a direction perpendicular to the substrate 100, the second electrode 112 extends to the outside of the first electrode 101. The first electrode 101 serves as a pixel electrode, and the second electrode 112 serves as a common electrode.

Method and basis for manufacturing liquid crystal display device according to this embodiment mode The manufacturing method of the liquid crystal display device of Embodiment Mode 19 is the same. Therefore, the content described in Embodiment Mode 19 can be applied to this Embodiment Mode.

Therefore, the contents described in Embodiment Modes 2 to 19 can also be applied to this Embodiment Mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, the source wiring 108 and the connection conductive film 109 may be directly connected to the semiconductor film 123 without forming the n-type semiconductor films 124a and 124b. In addition, in this embodiment mode, the shape of the opening pattern of the second electrode 112 may also be the same as in embodiment mode 4.

In addition, an opening pattern may be formed in the first electrode 101. In this case, it becomes a device that controls the orientation of liquid crystals by the IPS method. In addition, the shape of the first electrode 101 and the second electrode 112 and the shape of the opening pattern of these electrodes are, for example, the shape shown in Embodiment Mode 4.

Embodiment Mode 21

21A is a cross-sectional view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 21 of the present invention. The cross-sectional view is a cross-sectional view cut along EF in FIG. 3A and a cross-sectional view cut along GH in FIG. 3A. The structure of this embodiment mode is approximately the same as that of embodiment mode 3, but the differences from embodiment mode 3 are as follows: the second interlayer insulating film 111 shown in FIG. 3B is not formed; the second electrode 112 is located in the first interlayer insulating film. Film 107; to And a part of the second electrode 112 is located on the conductive film 110 for connection.

The manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of Embodiment Mode 3, and the difference from Embodiment Mode 3 is as follows: the process of forming the second interlayer insulating film 111 is not performed. Therefore, the content described in Embodiment Mode 3 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as in Embodiment Mode 3, and the description thereof will be omitted.

In addition, the second electrode 112 may be formed at the same time as the source wiring 108 and the like are formed. In other words, the same materials can also be used and processed at the same time. As a result, the process of forming a light-transmitting electrode as the second electrode 112 can be omitted, and therefore, the cost can be reduced.

Therefore, the second electrode 112 may not have light transmittance. In other words, the second electrode 112 may also have the property of reflecting light.

Therefore, the contents described in Embodiment Modes 2 to 20 can also be applied to this embodiment mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

According to this embodiment mode, the same effect as in Embodiment Mode 3 can also be obtained. In addition, since the process of forming the second interlayer insulating film 111 is omitted, the manufacturing cost can be reduced. Even with this structure, the interval between the first electrode 101 and the second electrode 112 can be made sufficiently large because the first electrode 101 is formed under the insulating film 102 serving as a base film. Therefore, an appropriate electric field can be applied to the liquid crystal 114.

In addition, in the liquid crystal display devices of the FFS method shown in Embodiment Modes 2, 6 to 18, and the liquid crystal display devices of the IPS method shown in Embodiment Modes 4 and 5, the liquid crystal display device in the first The second electrode 112 is formed on the interlayer insulating film 107 without forming the second interlayer insulating film 111, and a part of the second electrode 112 is located on the conductive film 110 for connection. In this case, the same effect as in this embodiment mode can also be obtained.

Embodiment Mode 22

21B is a cross-sectional view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 22 of the present invention. The cross-sectional view is a cross-sectional view cut along EF in FIG. 1A and a cross-sectional view cut along GH in FIG. 1A. The structure of this embodiment mode is approximately the same as that of embodiment mode 21, but the differences from embodiment mode 21 are as follows: the second electrode 112 is all located on the first interlayer insulating film 107; and a part of the conductive film 110 for connection is located on the first interlayer insulating film 107; Two electrodes 112 on.

The method of manufacturing a liquid crystal display device according to this embodiment mode is substantially the same as that of embodiment mode 21, but the differences from embodiment mode 21 are as follows: after the second electrode 112 is formed, the source wiring 108 and the connection conductive film 109 are formed , And a conductive film 110 for connection. Therefore, the content described in Embodiment Mode 21 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as those of Embodiment Mode 21, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 21 can also be applied to This embodiment mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

According to this embodiment mode, the same effect as in embodiment mode 21 can also be obtained. In addition, since the conductive film 110 for connection is located on the second electrode 112, cracking of the second electrode 112 can be prevented. In other words, if the second electrode 112 is formed on the connection conductive film 110 as in Embodiment Mode 21, since the connection conductive film 110 is thicker than the second electrode 112 in many cases, the second electrode 112 may be conductive in the connection. The end of the membrane 110 is broken. However, by forming the second electrode 112 under the connection conductive film 110 as in this embodiment mode, it is possible to prevent the second electrode 112 from being broken. In addition, since the conductive film 110 for connection is formed to have a large thickness in many cases, the possibility of cracking of the conductive film 110 for connection is low. In addition, since the process of forming the second interlayer insulating film 111 is omitted, the manufacturing cost can be reduced. Even with this structure, the interval between the first electrode 101 and the second electrode 112 can be made sufficiently large because the first electrode 101 is formed under the insulating film 102 serving as a base film. Therefore, an appropriate electric field can be applied to the liquid crystal 114.

In addition, in the liquid crystal display devices of the FFS method shown in Embodiment Modes 2, 6 to 18, and the liquid crystal display devices of the IPS method shown in Embodiment Modes 4 and 5, the liquid crystal display devices in the first The second electrode 112 is formed on the interlayer insulating film 107 without forming the second interlayer insulating film 111, and a part of the conductive film 110 for connection is located on the second electrode 112 Above, in order to obtain the same effect as this embodiment mode.

Embodiment Mode 23

22 is a cross-sectional view illustrating the shape of electrodes of an FFS mode liquid crystal display device according to Embodiment Mode 23 of the present invention. The cross-sectional view is a cross-sectional view cut along EF in FIG. 3A and a cross-sectional view cut along GH in FIG. 3A. The structure of this embodiment mode is substantially the same as that of embodiment mode 3, but the differences from embodiment mode 3 are as follows: the metal film 110a is formed on the second interlayer insulating film 111, and the second electrode 112 and the conductive film 110 for connection are borrowed It is electrically connected by the metal film 110a. Therefore, the content described in Embodiment Mode 3 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as in Embodiment Mode 3, and the description thereof will be omitted.

Therefore, the contents described in Embodiment Modes 2 to 22 can also be applied to this Embodiment Mode.

In addition, the description has been made with reference to the drawings, and one of the drawings is composed of various structural factors. Therefore, it is also possible to form a new structure by combining various structural factors in the drawings.

Regarding the metal film 110a, a part thereof is embedded in a contact hole formed in the second interlayer insulating film 111 to be electrically connected to the conductive film 110 for connection. The second electrode 112 is electrically connected to the metal film 110a because a part thereof is located on the metal film 110a.

In addition, the manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of Embodiment Mode 3, and the difference from Embodiment Mode 3 is as follows: The process of forming a contact hole in the second interlayer insulating film 111 is performed. After that, and before the process of forming the second electrode 112, the process of forming the metal film 110a is performed. A metal film is formed on the second interlayer insulating film 111 and in the contact hole, and etching using a resist pattern is performed to selectively remove the metal film to form the metal film 110a.

According to this embodiment mode, the same effect as in Embodiment Mode 3 can also be obtained.

In addition, in the IPS type liquid crystal display device shown in Embodiment Mode 4, the metal film 110a may be formed. In addition, in the liquid crystal display device of the FFS method shown in Embodiment Modes 2, 6 to 18, and the liquid crystal display device of the IPS method shown in Embodiment Mode 5, a metal film may be formed on the conductive film 109 for connection. 110a is the same metal film so that the conductive film for connection 109 and the second electrode 112 are electrically connected by the metal film.

Embodiment Mode 24

FIG. 23 is a cross-sectional view illustrating a structure of a pixel portion of an FFS method liquid crystal display device according to Embodiment Mode 24 of the present invention. The structure of the pixel portion of the liquid crystal display device according to this embodiment mode is substantially the same as that of embodiment mode 2, and the differences from embodiment mode 2 are as follows: red filter 130r, blue filter 130b, and green filter are arranged The filter 130g replaces the first interlayer insulating film 107 without disposing a color filter on the opposite substrate 120 side. Therefore, the contents described in Embodiment Modes 2 to 23 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as in Embodiment Mode 2, and the description thereof will be omitted. In addition, the gate insulating film 104 is located between the color filters 130r, 130b, and 130g and the semiconductor film 103, so the gate insulating film The film 104 also functions to suppress the diffusion of impurities from each color filter to the semiconductor film 103.

In addition, an insulating film of an inorganic material may be arranged between the color filter and the gate electrodes 105a and 105b. As an inorganic material, an insulating material containing oxygen or nitrogen such as silicon oxide (SiO_x), silicon nitride (SiN_x), silicon oxynitride (SiO_xN_y:X&gt;y), silicon oxynitride (SiN_xO_y: X&gt;y) etc. It is preferable to use a material containing a lot of nitrogen to prevent the intrusion of impurities.

In addition, the color of the color filter may also be colors other than red, blue, and green, or three or more colors, such as four or six colors. For example, yellow, cyan, magenta, and white may be added. In addition, in addition to color filters, a black matrix can also be configured.

In this way, by arranging the color filter on the substrate 100, it is not necessary to accurately position the opposite substrate 120, so it can be manufactured easily, the cost is reduced, and the manufacturing yield is improved.

The method of manufacturing the liquid crystal display device according to this embodiment mode is substantially the same as that of Embodiment Modes 2 to 23, and the difference from Embodiment Modes 2 to 23 is as follows: the process of forming the color filters 130r, 130b, and 130g is performed instead of forming the first Treatment of the interlayer insulating film 107. The color filters 130r, 130b, and 130g are formed by repeating the following processes three times: forming a color filter layer, forming a resist pattern on the color filter layer, and using the resist pattern as a mask The color filter layer is selectively subjected to a dry etching process. Alternatively, a photosensitive material or pigment or the like may be used instead of the resist. In addition, a space is formed between the color filter layers, and the second interlayer insulating film 111 is embedded in the space. Alternatively, an inorganic material or an organic material is also laminated. or , Stacked black matrix. In addition, the color filters 130r, 130b, and 130g, or the black matrix may be formed using a droplet ejection method (for example, an inkjet method).

Therefore, the number of manufacturing processes of the liquid crystal display device can be reduced. In addition, since the color filter is provided on the side of the substrate 100, compared to the case where the color filter is formed on the opposite substrate, even if a positional deviation occurs with the opposite substrate, the reduction in the aperture ratio can be suppressed. In other words, the margin for the positional deviation of the opposed substrate increases.

Fig. 24A is a plan view of the liquid crystal display device shown in Fig. 23. As shown in FIG. 24A, in the liquid crystal display device, a source line drive circuit 152 and a gate line drive circuit 154 as peripheral drive circuits are formed around the pixel portion 150. A red color filter 130r is provided on the source line driving circuit 152 and the gate line driving circuit 154, respectively. By providing the red color filter 130r, it is possible to prevent the light degradation of the active layer of the thin film transistors of the source line driving circuit 152 and the gate line driving circuit 154, and to achieve flattening.

FIG. 24B is an enlarged view of a part (3×3 rows and columns) of the pixel portion 150 of FIG. 24A. In the pixel portion 150, the red color filter 130r, the blue color filter 130b, and the green color filter 130g are alternately arranged in a stripe shape. In addition, a red color filter 130r is arranged on the thin film transistor included in each pixel.

In addition, the source wiring (not shown) and the gate wiring (not shown) are arranged to overlap with the space between the color filters, so light leakage can be suppressed.

In this way, the red color filter 130r functions as a black matrix, and therefore the black matrix forming process required in the past can be omitted.

As described above, according to this embodiment mode, the same effects as in embodiment modes 2 to 23 can be obtained. In addition, the color filters 130r, 130b, and 130g are arranged instead of the first interlayer insulating film 107, so the number of manufacturing processes of the liquid crystal display device can be reduced. In addition, compared with the case where the color filter is formed on the opposite substrate, even if a positional deviation occurs with the opposite substrate, the decrease in the aperture ratio can be suppressed. In other words, the margin for the positional deviation of the opposed substrate increases.

In addition, in FIG. 23, a color filter is arranged between the gate electrodes 105a and 105b and the source wiring 108, but the present invention is not limited to this. A color filter may be arranged between the source wiring 108 and the second electrode 112.

In addition, in addition to color filters, a black matrix can also be configured.

In addition, an insulating film of an inorganic material may be arranged between the color filter and the source wiring 108 or between the color filter and the second electrode 112. As an inorganic material, an insulating material containing oxygen or nitrogen such as silicon oxide (SiO_x), silicon nitride (SiN_x), silicon oxynitride (SiO_xN_y:X&gt;y), silicon oxynitride (SiN_xO_y: X&gt;y) etc. It is preferable to use a material containing a lot of nitrogen to prevent the intrusion of impurities.

In this way, by disposing the color filter or the black matrix under the second electrode 112, the portion in contact with the liquid crystal or the alignment film can be made flat. By making it flat, the alignment disorder of liquid crystal molecules can be suppressed, light leakage can be suppressed, and contrast can be improved.

In addition, in the liquid crystal display devices of the FFS method or the IPS method shown in Embodiment Modes 3 to 18 and 22, the color filters 130r, 130b, and 130g may be provided in place of the first interlayer insulating film in the same manner as in this embodiment mode. 107 or the second interlayer insulating film 111. In this case, the same effect as in this embodiment mode can also be obtained.

Embodiment Mode 25

25A is a plan view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 25 of the present invention, and FIG. 25B is an enlarged view illustrating the structure of the pixel portion of FIG. 25A. The structure of this embodiment mode is substantially the same as that of embodiment mode 24, and the difference from embodiment mode 24 is the layout of the color filters 130r, 130b, and 130g. Therefore, the content described in Embodiment Mode 24 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as those of Embodiment Mode 24, and the description thereof will be omitted.

In this embodiment mode, the color filters 130r, 130b, and 130g are alternately arranged in a matrix shape according to pixels. In detail, the red color filter 130r is configured to fill the gaps between the blue color filter 130b and the green color filter 130g. In addition, a red color filter 130r is provided on the source line drive circuit 152 and the gate line drive circuit 154 as the peripheral drive circuit, and the source line drive circuit 152, the gate line drive circuit 154, and the pixel portion 150 A red color filter 130r is provided in the space between. Therefore, it is possible to suppress the generation of spaces between the color filter layers.

According to this embodiment mode, the same effect as in embodiment mode 24 can also be obtained. In addition, color filters 130r, 130b, and 130g may be provided instead of the second interlayer insulating film 111 after the first interlayer insulating film 107 is formed. In this case, the same effect as in this embodiment mode can also be obtained.

In addition, in the liquid crystal display devices of the FFS method or the IPS method shown in Embodiment Modes 3 to 18 and 23, the color filters 130r, 130b, and 130g may be provided in place of the first interlayer insulating film in the same manner as in this embodiment mode. 107 or the second interlayer insulating film 111. In this case, the same effect as in this embodiment mode can also be obtained.

Embodiment Mode 26

FIG. 26 is a cross-sectional view illustrating the structure of an FFS mode liquid crystal display device according to Embodiment Mode 26 of the present invention. The structure of the liquid crystal display device according to this embodiment mode is substantially the same as that of embodiment mode 22, and the difference from embodiment mode 22 is as follows: color filters 130r, 130b, and 130g are provided instead of the first interlayer insulating film 107. The layout of the color filters 130r, 130b, and 130g in this embodiment mode is the same as the layout shown in embodiment mode 25. Therefore, the contents described in Embodiment Modes 22 and 25 can also be applied to this Embodiment Mode. Hereinafter, the same reference numerals are used to denote the same structures as those of the embodiment modes 22 and 25, and the description thereof will be omitted.

According to this embodiment mode, the same effect as in embodiment mode 25 can also be obtained. In addition, in the liquid crystal display devices of the FFS system shown in Embodiment Modes 19 to 21, the color filters 130r, 130b, and 130g may be provided in place of the first interlayer insulating film 107 as in this embodiment mode. In this case, the same effect as in this embodiment mode can also be obtained.

In addition, the layout of the color filters 130r, 130b, and 130g is not limited to the layout shown in Embodiment Modes 23 and 25, and may also be various layouts such as a triangular mosaic arrangement, an RGBG four-pixel arrangement, or an RGBW four-pixel arrangement. this In addition, in this case, it is also preferable to dispose a red color filter 130r above the active layer of the thin film transistor.

Embodiment Mode 27

27A to 27D are plan views respectively illustrating electrode shapes of an FFS mode liquid crystal display device according to Embodiment Mode 27 of the present invention. The structure of this embodiment mode is substantially the same as that of Embodiment Mode 2, and the difference from Embodiment Mode 2 lies in the shape of the second electrode 112. Therefore, parts other than the first electrode 101 and the second electrode 112 are not shown in the drawings.

In FIG. 27A, the second electrode 112 is formed with a plurality of slot-shaped opening patterns 112d and 112e. The opening patterns 112d and 112e are inclined with respect to the source wiring. The opening pattern 112d is formed in the upper half of the second electrode 112 in the drawing, and the opening pattern 112e is formed in the lower half of the second electrode 112 in the drawing. The angles of the opening patterns 112d and 112e are different from each other.

In FIG. 27B, the second electrode 112 has a shape in which a plurality of electrodes having a shape along a circumference and having different radii are arranged in a concentric circle shape, wherein the plurality of electrodes are connected to each other. In addition, the space between the electrodes acts as an opening pattern.

In FIG. 27C, the second electrode 112 has a shape in which two electrodes having a comb-teeth shape are arranged to face each other and the comb-teeth parts are staggered. In addition, the space between the comb tooth portions acts as an opening pattern.

In FIG. 27D, the second electrode 112 has a comb tooth shape, and the space between the comb tooth portions acts as an opening pattern.

The manufacturing method of the liquid crystal display device according to this embodiment mode is in any The situation is almost the same as in Embodiment Mode 2. Therefore, the content described in Embodiment Mode 2 can also be applied to this Embodiment Mode.

According to this embodiment mode, the same effect as in Embodiment Mode 2 can also be obtained. In addition, in the FFS type liquid crystal display devices shown in Embodiment Modes 3 and 4 to 26, the shape of the second electrode 112 may be any of the shapes shown in FIGS. 27A to 27D.

Embodiment Mode 28

28A to 28D are plan views respectively illustrating electrode shapes of an IPS mode liquid crystal display device according to Embodiment Mode 28 of the present invention. The structure of this embodiment mode is substantially the same as that of Embodiment Mode 4, and the difference from Embodiment Mode 4 lies in the shapes of the first electrode 101 and the second electrode 112. Therefore, parts other than the first electrode 101 and the second electrode 112 are not shown in the drawings.

In FIG. 28A, the opening pattern 101b of the first electrode 101 and the opening pattern 112f of the second electrode 112 have a wavy line shape. The opening pattern 101b is located under and around the area of the second electrode 112 where the opening pattern 112f is not formed.

In FIG. 28B, the first electrode 101 has a shape in which a circular opening pattern 101c is formed in the center of a rectangular body portion, and in the opening pattern 101c, a plurality of electrodes having a shape along a circumference and having different radii are arranged as A circular shape concentric with the opening pattern 101c, wherein each electrode having a shape along the circumference is connected to the main body part by a linear electrode. In addition, the second electrode 112 has the following shape: A circular opening pattern 112g is formed at the center of the part, and in the opening pattern 112g, an electrode having a shape along the circumference is arranged in a circular shape concentric with the opening pattern 112g, wherein the electrode is connected to the main body by a linear electrode part. In addition, the second electrode 112 may also have a plurality of electrodes having a shape along the circumference.

In addition, since the opening pattern 101c and the opening pattern 112g are concentric, the electrode having the shape along the circumference of the first electrode 101 and the electrode having the shape along the circumference of the second electrode 112 are concentric with each other. In addition, the electrodes having the shape along the circumference of the first electrode 101 and the electrodes having the shape along the circumference of the second electrode 112 are staggered and parallel due to their different radii.

In FIG. 28C, the first electrode 101 has a shape in which a plurality of linear electrodes extending in the vertical direction of the drawing are arranged parallel to each other, and the upper and lower ends of which are extended in the lateral direction of the drawing connect. In addition, the second electrode 112 has a comb tooth shape in which the comb tooth portion is located in the space between the linear electrodes constituting the first electrode 101.

In FIG. 28D, the first electrode 101 and the second electrode 112 each have a comb tooth shape, and they are arranged to face each other. In addition, the comb teeth are arranged in a staggered manner.

The manufacturing method of the liquid crystal display device according to this embodiment mode is substantially the same as that of embodiment mode 4 in any case. Therefore, the content described in Embodiment Mode 4 can be applied to this Embodiment Mode.

According to this embodiment mode, the same effect as in Embodiment Mode 4 can also be obtained. Furthermore, in the liquid crystal display device according to Embodiment Mode 5, The shape of the first electrode 101 and the second electrode 112 may also be any of the shapes shown in FIGS. 28A to 28D.

Embodiment Mode 29

FIG. 29 is a circuit diagram illustrating a circuit configuration of a liquid crystal display device according to Embodiment Mode 29 of the present invention. In the liquid crystal display device according to this embodiment mode, a plurality of pixels are arranged in a matrix shape. The structure of each pixel is substantially the same as the pixels of the liquid crystal display devices shown in Embodiment Modes 2 to 28, and the difference from Embodiment Modes 2 to 28 is that a second auxiliary wiring 106a extending in the longitudinal direction of the drawing is formed. Therefore, the contents described in Embodiment Modes 2 to 28 can also be applied to this embodiment mode. Hereinafter, the same reference numerals are used to denote the same structures as those of Embodiment Modes 2 to 28, and the description thereof will be omitted.

The second auxiliary wiring 106a is formed in the same layer as the auxiliary wiring 106, and is electrically connected to the auxiliary wiring 106 in each portion intersecting the auxiliary wiring 106.

In addition, the pixels have capacitors C connected to thin film transistors 121 and 122_sAnd C_1s. Capacitance C_sIt is composed of a portion of the first electrode 101 and the second electrode 112 where the opening pattern is not formed, and respective insulating films located between them. Capacitance C_1sIt is composed of a portion of the first electrode 101 overlapping the opening pattern of the second electrode 112 and a portion located thereon. By forming these capacitors, the holding capacitance can be increased.

According to this embodiment mode, the same effects as in embodiment modes 2 to 28 can also be obtained. In addition, by providing the second auxiliary wiring 106a, it is possible to It is easy to keep the potential of the common electrode at the same value in all pixels. In addition, the liquid crystal display device according to this embodiment mode may be an FFS method or an IPS method.

Embodiment Mode 30

30A and 30B are circuit diagrams of a liquid crystal display device according to Embodiment Mode 30. The liquid crystal display device according to this embodiment mode is a liquid crystal display device of an FFS method or an IPS method, and one pixel is composed of a plurality of (for example, two) sub-pixels. The structure of each sub-pixel is the same as any pixel included in the liquid crystal display device shown in Embodiment Modes 2 to 28. Therefore, the contents described in Embodiment Modes 2 to 28 can also be applied to this embodiment mode. Hereinafter, the same reference numerals are used to denote the same structures as those of Embodiment Modes 2 to 28, and the description thereof will be omitted.

In the example shown in FIG. 30A, a plurality of sub-pixels constituting one pixel are electrically connected to the same gate wiring 105 and electrically connected to source wiring 108 and auxiliary wiring 106 that are different from each other. In each pixel column, the same number of source wirings 108 as the number of sub-pixels (in FIG. 30A, two) are formed. Therefore, different signals can be transmitted according to each sub-pixel.

In the example shown in FIG. 30B, a plurality of sub-pixels constituting one pixel are electrically connected to gate wiring 105 different from each other, and electrically connected to the same auxiliary wiring 106.

In addition, each sub-pixel has a capacitance C_sAnd C_1s. The structure of these capacitors is the same as that of Embodiment Mode 29, so their description is omitted.

According to this embodiment mode, it is possible to obtain the same as the embodiment modes 2 to 28 The same effect. In addition, since one pixel is composed of a plurality of sub-pixels, the viewing angle can be made larger. In addition, the following effects can also be obtained: the pixels can be made redundant, and regional grayscale display can be performed.

Embodiment Mode 31

Hereinafter, a method of manufacturing a liquid crystal display device according to Embodiment Mode 31 will be described with reference to FIGS. 31A to 33B. This embodiment mode is an example of a method of manufacturing a liquid crystal display device having the structure shown in Embodiment Mode 3. By using the manufacturing method, the freedom of the interval between the common electrode and the pixel electrode can be improved. Since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be freely set. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. In other words, in a display device using liquid crystal, the liquid crystal molecules aligned parallel to the substrate can be controlled in a direction parallel to the substrate (so-called parallel alignment), and therefore the viewing angle can be enlarged by applying the most suitable electric field. In addition, in FIGS. 31A to 33B, although the interlayer insulating film has a single-layer structure, it may have a two-layer structure.

First, as shown in FIG. 31A, a light-transmitting conductive film is formed on the substrate 800. The substrate 800 is a glass substrate, a quartz substrate, a substrate made of an insulator such as alumina, a heat-resistant plastic substrate, a silicon substrate, or a metal plate that can withstand the processing temperature of post-processing. In addition, the substrate 800 may be formed with silicon oxide or silicon oxide formed on the surface of a metal such as stainless steel or a semiconductor substrate. A substrate of an insulating film such as nitrogen oxide. In addition, when a plastic substrate is used as the substrate 800, it is preferable to use PC (polycarbonate), PES (polyether ether), PET (polyethylene terephthalate), or PEN (polynaphthalene two Ethylene formate) and other materials with a relatively high glass transition point.

In addition, the conductive film is, for example, an ITO film or an IZO (Indium Zinc Oxide) film formed by mixing 2 to 20 wt% of zinc oxide (ZnO) to indium tin oxide or indium oxide containing Si element.

Then, a photoresist film is formed on the conductive film, and the photoresist film is exposed and developed. Therefore, the resist pattern is formed on the conductive film. Next, the conductive film is etched using the resist pattern as a mask. By performing this process, the first electrode 801 as a pixel electrode is formed on the substrate 800. Then, the resist pattern is removed.

Next, an insulating film 802 is formed on the first electrode 801 and the substrate 800. The insulating film 802 is made of silicon nitride (SiN_x)Laminated silicon oxide (SiO_x) Film, or other insulators (such as silicon oxynitride (SiO_xN_y)(x&gt;y) or silicon oxynitride (SiN_xO_y)(x&gt;y)).

Here, the surface of the insulating film 802 composed of a silicon oxide film, a silicon oxynitride film, or the like may be subjected to a high-density plasma nitridation treatment to form a nitride film on the surface of the insulating film 802.

For example, using 2.45GHz microwave to generate high-density plasma, the electron density is 1×10¹¹To 1×10¹³/cm³, The electron temperature is below 2eV and the ion energy is below 5eV. This high-density plasma has an active material with low kinetic energy. Compared with the conventional plasma treatment, the plasma damage is less, so it can form a defect. Sink a small membrane. The distance between the microwave generating antenna and the insulating film 802 can be set to 20 to 80 mm, preferably 20 to 60 mm.

By performing the high-density plasma treatment in a nitrogen atmosphere such as an atmosphere containing nitrogen and a rare gas, or an atmosphere containing nitrogen, hydrogen, and a rare gas, or an atmosphere containing ammonia and a rare gas, the surface of the insulating film 802 can be made Nitriding. The nitride film can suppress the diffusion of impurities from the substrate 800, and an extremely thin nitride film can be formed by performing the high-density plasma treatment, so the influence of stress on the semiconductor film formed thereon can be reduced.

Next, as shown in FIG. 31B, a crystalline semiconductor film (for example, a polysilicon film) is formed on the insulating film 802. As a method of forming a crystalline semiconductor film, a method of directly forming a crystalline semiconductor film on the insulating film 802 and a method of crystallizing an amorphous semiconductor film after forming it on the insulating film 802 can be cited.

As a method of crystallization of an amorphous semiconductor film, a method of irradiating a laser, a method of heating with an element that promotes the crystallization of a semiconductor film (for example, a metal element such as nickel) to achieve crystallization, or a method of A method of irradiating a laser after heating by using an element that promotes the crystallization of a semiconductor film to achieve crystallization. Of course, a method of thermally crystallizing an amorphous semiconductor film without using the element can also be used. However, it is limited to substrates that can withstand high temperatures, such as quartz substrates and silicon wafers.

In the case of laser irradiation, a continuous oscillating laser beam (CW laser beam) or a pulsed oscillating laser beam (pulse laser beam) can be used. Here, as the laser beam, a laser beam oscillated by one or more of the following lasers can be used, that is, gas lasers such as Ar lasers, Kr lasers Emitters, excimer lasers, etc.; will be used in single crystal YAG, YVO₄, Forsterite (Mg₂SiO₄), YAlO₃, GdVO₄, Or polycrystalline (ceramic) YAG, Y₂O₃, YVO₄, YAlO₃, GdVO₄Add one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta as a dopant in the laser; glass laser; ruby laser; change Stone laser; Ti: sapphire laser; copper vapor laser; and gold vapor laser. By irradiating the fundamental wave of this laser beam and the second to fourth harmonics of the fundamental wave, a crystal with a large particle size can be obtained. For example, Nd: YVO can be used₄The second harmonic (532nm) or third harmonic (355nm) of the laser (fundamental wave is 1064nm). At this time, the laser energy density needs to be 0.01 to 100MW/cm²(Preferably 0.1 to 10MW/cm²). Also, the laser is irradiated at a scanning speed of about 10 to 2000 cm/sec.

In addition, YAG and YVO will be used in single crystal₄, Forsterite (Mg₂SiO₄), YAlO₃, GdVO₄, Or polycrystalline (ceramic) YAG, Y₂O₃, YVO₄, YAlO₃, GdVO₄The material obtained by adding one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as a dopant is used as a laser, Ar ion laser, or Ti: sapphire laser The transmitter can be continuously oscillated, and pulse oscillation can be performed at an oscillation frequency of 10MHz or more by Q-switching or mode locking. When the laser beam is oscillated at an oscillation frequency above 10 MHz, the next pulse is emitted to the semiconductor film after the semiconductor film is melted by the laser and before the semiconductor film is solidified. Therefore, unlike the case of using a pulse laser with a low oscillation frequency, the interface between the solid phase and the liquid phase can be continuously moved in the semiconductor film. , And can obtain crystal grains that grow continuously along the scanning direction.

By using ceramic (polycrystalline) as the medium, the medium can be formed into any shape in a short time and at low cost. When a single crystal is used, a cylindrical medium with a diameter of several mm and a length of several tens of mm is generally used. However, when ceramics are used, a larger medium can be formed.

The concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission cannot be changed significantly in single crystal or polycrystalline. Therefore, increasing the concentration can increase the laser output. Certain boundaries. However, in the case of ceramics, the size of the medium can be significantly increased compared to single crystals, so a significant increase in output can be expected.

In addition, in the case of ceramics, a parallelepiped-shaped or rectangular parallelepiped-shaped medium can be easily formed. By using a medium of this shape to make the oscillating light advance in a zigzag shape inside the medium, the length of the oscillating light path can be increased. Therefore, the amplitude becomes larger, and it is possible to oscillate with a large output. In addition, since the cross-sectional shape of the laser beam emitted from the medium of this shape is a quadrangular shape when emitted, it is advantageous to shape the laser beam into a linear shape compared to a circular laser beam. By using an optical system to shape the emitted laser beam, a linear beam with a short side length of 1 mm or less and a long side length of several mm to several m can be easily obtained. In addition, by irradiating the excitation light uniformly on the medium, the linear beam has a uniform energy distribution along the longitudinal direction.

By irradiating the above-mentioned linear beam on the semiconductor film, the entire surface of the semiconductor film can be annealed more uniformly. In the case of uniform annealing up to both ends of the linear beam, a method needs to be adopted, namely Slots are arranged at both ends to shield the decaying part of energy and so on.

If the semiconductor film is annealed using the linear beam of uniform intensity obtained according to the above steps, and the semiconductor film is used to manufacture an electronic device, the characteristics of the electronic device are good and uniform.

As a method for achieving crystallization by heating with an element that promotes the crystallization of an amorphous semiconductor film, the technique described in Japanese Patent Application Publication No. Hei 8-78329 can be used. The technique described in this publication is a technique of adding a metal element that promotes crystallization to an amorphous semiconductor film (also referred to as an amorphous silicon film) and heating it to crystallize the amorphous semiconductor film starting from the added region .

The amorphous semiconductor film can also be crystallized by irradiation with strong light instead of heat treatment. In this case, any one or a combination of infrared light, visible light, and ultraviolet light may be used. Typically, light emitted from a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, or a high-pressure mercury lamp is used. The light source illuminates for 1 to 60 seconds, or preferably 30 to 60 seconds, and this illumination is repeated 1 to 10 times, or preferably 2 to 6 times. The luminous intensity of the lamp light source is arbitrary, but the semiconductor film is instantly heated to 600°C to 1000°C. In addition, if necessary, heat treatment may be performed to discharge hydrogen contained in the amorphous semiconductor film before being irradiated with strong light. Alternatively, crystallization can be performed by both heat treatment and irradiation with strong light.

After the heat treatment, in order to increase the crystallization rate of the crystalline semiconductor film (the ratio of the volume occupied by the crystalline component to the total volume of the film) and correct the defects remaining in the crystal grains, the crystalline semiconductor can be irradiated with a laser in the air or oxygen atmosphere membrane. The laser beam can be selected from the above-mentioned laser beam.

In addition, it is necessary to remove the added element from the crystalline semiconductor film. The method is explained below. First, the surface of the crystalline semiconductor film is treated with an aqueous solution containing ozone (usually ozone water), thereby forming a barrier layer formed of an oxide film (referred to as a chemical oxide) with a thickness of 1 nm to 10 nm on the surface of the crystalline semiconductor film. When only the gettering layer is selectively removed in the subsequent processing, the barrier layer serves as an etching stopper.

Then, a gettering layer containing a rare gas element is formed on the barrier layer as a gettering point. Here, a semiconductor film containing a rare gas element is formed as a gettering layer by a CVD method or a sputtering method. When forming the gettering layer, the sputtering conditions are appropriately controlled to add the rare gas element thereto. The rare gas element may be one or more of helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe).

In addition, in the case of using a source gas containing phosphorus as an impurity element or using a target containing phosphorus to form a gettering layer, in addition to using rare gas elements for gettering, it can also be performed by using the Coulomb force of phosphorus. Gettering. At the time of gettering, metal elements (for example, nickel) tend to move to a region having a high concentration of oxygen. Therefore, the concentration of oxygen contained in the gettering layer is ideally set to, for example, 5×10¹⁸/cm³above.

Next, the crystalline semiconductor film, the barrier layer, and the gettering layer are subjected to heat treatment (for example, heat treatment or irradiation with strong light), thereby getting the metal element (for example, nickel) to make the metal element in the crystalline semiconductor film The concentration is reduced or the metal element in the crystalline semiconductor film is removed.

Then, a known etching method is performed using the barrier layer as an etching stopper to selectively remove only the gettering layer. After that, for example, use hydrogen The etchant of hydrofluoric acid removes the barrier layer formed by the oxide film.

Here, impurity ions can be doped in consideration of the critical value characteristics of the TFT to be manufactured.

Next, a photoresist film (not shown) is coated on the crystalline semiconductor film by a coating method, and the photoresist film is exposed and developed. The coating method refers to a spin coating method, a spray method, a screen printing method, a paint method, and the like. Therefore, the resist pattern is formed on the crystalline semiconductor film. Then, the crystalline semiconductor film is etched using the resist pattern as a mask. Therefore, the crystalline semiconductor film 803 is formed on the insulating film 802.

Next, after cleaning the surface of the crystalline semiconductor film 803 with an etchant containing hydrofluoric acid, a gate insulating film 804 with a thickness of 10 to 200 nm is formed on the crystalline semiconductor film 803. The gate insulating film 804 is composed of an insulating film mainly composed of silicon, such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon oxynitride film, and the like. In addition, it may be a single-layer or laminated film. In addition, a gate insulating film 804 is also formed on the insulating film 802.

Next, as shown in FIG. 31C, after the gate insulating film 804 is cleaned, a first conductive film and a second conductive film are sequentially formed on the gate insulating film 804. For example, the first conductive film is a tungsten film, and the second conductive film is a tantalum nitride film.

Next, a photoresist film (not shown) is coated on the second conductive film, and the photoresist film is exposed and developed. Therefore, a resist pattern is formed on the second conductive film. Then, the first conductive film and the second conductive film are etched under the first condition using the resist pattern as a mask, and the second conductive film is etched under the second condition. Therefore, the first gate electrodes 805a and 805b and the second gate electrodes 806a and 806b are formed in the crystal On the semiconductor film 803. The first gate electrodes 805a and 805b are separated from each other. The second gate electrode 806a is located on the first gate electrode 805a, and the second gate electrode 806b is located on the first gate electrode 805b. The inclination of each side surface of the first gate electrodes 805a and 805b is smaller than the inclination of each side surface of the second gate electrodes 806a and 806b.

In addition, by performing the etching process as described above, the first wiring 807 and the second wiring 808 located on the first wiring 807 are formed in the vicinity of the first electrode 801. Here, it is preferable to route each gate electrode and each wiring as described above in a form whose corners are round when viewed from a direction perpendicular to the substrate. By making the corner portion of the electrode or the wiring round, it is possible to prevent dust and the like from remaining on the corner portion of the wiring, suppress defects due to dust, and improve yield. Then, the photoresist film is removed.

Then, as shown in FIG. 31D, using the first gate electrodes 805a and 805b and the second gate electrodes 806a and 806b as masks, a first conductivity type (for example, n-type) impurity element 809 (for example, phosphorus) is added to the crystalline semiconductor.membrane803middle. Film 803. Therefore, the first impurity regions 810a, 810b, and 810c are formed in the crystalline semiconductor film 803. The first impurity region 810a is located in a region that becomes the source of the thin film transistor, and the first impurity region 810c is located in a region that becomes the drain of the thin film transistor. The first impurity region 810b is located between the first gate electrodes 805a and 805b.

Next, as shown in FIG. 31E, a photoresist film is applied to cover the first gate electrodes 805a and 805b and the second gate electrodes 806a and 806b, and the photoresist film is exposed and developed. Therefore, the first gate electrode 805a and the second gate electrode are covered by the resist patterns 812a and 812b On and around 806a, and on and around the first gate electrode 805b and the second gate electrode 806b. Then, the first conductivity type impurity element 811 (for example, phosphorus) is added to the crystalline semiconductor film 803 using the resist patterns 812a and 812b as masks. Therefore, the first conductivity type impurity element 811 is again added to a part of the first impurity regions 810a, 810b, and 810c, thereby forming the second impurity regions 813a, 813b, and 813c. In addition, the first impurity regions 810a, 810b, and 810c other than the part become third impurity regions 814a, 814b, 814c, and 814d.

Then, as shown in FIG. 32A, the resist patterns 812a and 812b are removed. Next, an insulating film (not shown) covering substantially the entire surface is formed. The insulating film is, for example, a silicon oxide film, and is formed by a plasma CVD method.

Next, the crystalline semiconductor film 803 is heat-treated to activate the added impurity element. This heat treatment is a rapid thermal annealing method (RTA method) using a lamp light source, a method of irradiating a YAG laser or excimer laser from the back, a heat treatment using a furnace, or a combination of these methods. Into the method of processing.

By performing the heat treatment, while activating the impurity elements, when the crystallization of the crystalline semiconductor film 803 is achieved, the elements (metal elements such as nickel) used as catalysts are absorbed to contain high-concentration impurities (such as phosphorus). In the second impurity regions 813a, 813b, and 813c of ), the nickel concentration in the portion of the crystalline semiconductor film 803 mainly serving as the channel formation region decreases. As a result, the crystallinity of the channel formation region improves. Therefore, the off-current value of the TFT decreases, and high field-effect mobility can be obtained. Like this, can To obtain a TFT with good characteristics.

Next, an insulating film 815 is formed to cover the crystalline semiconductor film 803. The insulating film 815 is, for example, a silicon nitride film, and is formed by a plasma CVD method. Then, a flat film serving as an interlayer insulating film 816 is formed on the insulating film 815. As the interlayer insulating film 816, transparent inorganic materials (silicon oxide, silicon nitride, silicon nitride containing oxygen, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyamide, etc.) are used. Imidamide, resist, or benzocyclobutene), or a laminate thereof. In addition, for another light-transmitting film used for flattening film, it is possible to use SiO containing alkyl group obtained by coating method._xThe insulating film composed of the film, such as quartz glass, alkyl silsesquioxane polymer, alkyl silsesquioxane polymer, hydrogenated silsesquioxane polymer, hydrogenated alkyl silsesquioxane polymer Insulating film formed by alkane polymer, etc. As an example of the silicone-based polymer, insulating film coating materials such as PSB-K1 and PSB-K31 manufactured by Toray Industries Co., Ltd., and insulating film coating materials such as those manufactured by Catalysts &amp; Chemicals Industries Co., Ltd. can be given. Coating material, namely ZRS-5PH. The interlayer insulating film 816 may be a single-layer film or a laminated film.

Next, a photoresist film (not shown) is coated on the interlayer insulating film 816, and the photoresist film is exposed and developed. Therefore, a resist pattern is formed on the interlayer insulating film 816. Then, the interlayer insulating film 816, the insulating film 815, and the gate insulating film 804 are etched using the resist pattern as a mask. Therefore, contact holes 817a, 817b, 817c, and 817d are formed in the interlayer insulating film 816, the insulating film 815, and the gate insulating film 804. The contact hole 817a is located in the second impurity used as the source of the transistor On the region 813a, the contact hole 817b is on the second impurity region 813c used as the drain of the transistor. The contact hole 817c is located on the first electrode 801, and the contact hole 817d is located on the second wiring 808. Then, the resist pattern is removed.

Next, as shown in FIG. 32B, a first conductive film 818 is formed in the contact holes 817a, 817b, 817c, and 817d and on the interlayer insulating film 816. The first conductive film 818 is a light-transmitting conductive film, such as an ITO film, or by using a target in which 2 to 20 wt% of zinc oxide (ZnO) is mixed into indium tin oxide or indium oxide containing Si element And the formation of IZO (Indium Zinc Oxide) film. Next, a second conductive film 819 is formed on the first conductive film 818. The second conductive film 819 is, for example, a metal film.

Next, a photoresist film 820 is coated on the second conductive film 819. Then, a reticle 840 is placed over the photoresist film 820. To form the reticle 840, semipermeable film patterns 842a, 842b, 842c, and 842d are formed on a glass substrate, and light shielding patterns 841a, 841b, and 841c are formed in a part of the semipermeable film patterns 842a, 842b, 842c, 842d. The semi-permeable film pattern 842a and the light-shielding pattern 841a are located on the contact hole 817a, the semi-permeable film pattern 842b and the light-shielding pattern 841b are located on the contact holes 817b and 817c, and the semi-permeable film pattern 842c and the light-shielding pattern 841c are located on the contact hole 817d and are translucent. The film pattern 842d is located on the first electrode 801.

Next, the photoresist film 820 is exposed using the reticle 840 as a mask. Therefore, except for the portions located under the light shielding patterns 841a to 841c, and the portions located below the portions where the semipermeable film patterns 842a to 842d and the light shielding patterns 841a to 841c do not overlap and are located near the second conductive film 819. Outside of the layer portion, the photoresist film 820 is photosensitive. In addition, reference numerals 821a, 821b, 821c, and 821d denote parts that are not photosensitive.

Next, as shown in FIG. 32C, the photoresist film 820 is developed. Therefore, the photosensitive portion in the photoresist film 820 is removed, thereby forming resist patterns 822a, 822b, 822c, and 822d. The resist pattern 822a is located on the contact hole 817a. The resist pattern 822b is located on and between the contact holes 817b and 817c. The resist pattern 822c is located on and around the contact hole 817d. The resist pattern 822d is located on the first electrode 801. In addition, portions of the resist pattern 822c other than the portion located on the contact hole 817d, and the resist pattern 822d are thinner than other resist patterns.

Next, as shown in FIG. 32D, the first conductive film 818 and the second conductive film 819 are etched using the resist patterns 822a, 822b, 822c, and 822d as masks. Therefore, in the regions not covered by the resist patterns 822b, 822c, 822d, the first conductive film 818 and the second conductive film 819 are removed.

In addition, the resist patterns 822a, 822b, 822c, and 822d are also gradually etched. Therefore, in the etching process, the thin portion in the resist pattern (specifically, the resist pattern 822c except for the resist pattern 822c located on the contact hole 817d) is gradually etched. The part other than the part and the resist pattern 822d) are removed. Therefore, in the area below the portion, the second conductive film 819 is removed, and only the first conductive film 818 remains. Then, the resist patterns 822a, 822b, and 822c are removed.

Like this, the source is formed with a resist pattern and one etching process The wirings 823a and 824a, the drain wirings 823b and 824b, the conductive film 824c for connection, and the second electrode 828 as a common electrode. The drain wirings 823a and 824a, and the drain wirings 823b and 824b, and the impurity regions formed in the crystalline semiconductor film 803, the gate insulating film 804, the first gate electrodes 805a and 805b, and the second gate electrode 806a and Together, 806b forms a thin film transistor 825. In addition, the drain wirings 823b and 824b electrically connect the impurity region 813c serving as a drain and the first electrode 801. The second electrode 828 is electrically connected to the second wiring 808 because a part of it is embedded in the contact hole 817d. The connection conductive film 824c is formed on the second electrode 828 located on the contact hole 817d.

Then, a first alignment film 826 is formed. Therefore, the active matrix substrate is completed. In addition, by performing the processing shown in FIGS. 31A to 32D, thin film transistors 827 and 829 (shown in FIG. 33B) are also formed in the gate signal line driving circuit 854 of the liquid crystal display device shown in FIGS. 33A and 33B. In addition, by performing the processes shown in FIGS. 31B to 31D, the first terminal electrode 838a and the second terminal electrode 838b (shown in FIG. 33B) that connect the active matrix substrate and the outside are formed.

Next, as shown in the plan view of FIG. 33A and the cross-sectional view cut along KL in FIG. 33B, an organic resin film such as an acrylic resin film is formed on the active matrix substrate, and etching using a resist pattern is performed to selectively The organic resin film is removed. Therefore, the column spacers 833 are formed on the active matrix substrate. Then, after the sealing material 834 is formed in the sealing area 853, the liquid crystal is dropped onto the active matrix substrate. Before dropping the liquid crystal, it can also be formed on the sealing material to prevent reaction between the sealing material and the liquid crystal. Should the protective film.

Then, the opposing substrate 830 on which the color filter 832 and the second alignment film 831 are formed is arranged at a position opposing the active matrix substrate, and the two substrates are bonded using the sealing material 834. At this time, the active matrix substrate and the opposing substrate 830 are bonded at a uniform interval with a spacer 833 in between. Then, a sealant (not shown) is used to completely seal the space between the two substrates. Therefore, the liquid crystal is sealed between the active matrix substrate and the opposite substrate.

Next, if necessary, one or both of the active matrix substrate and the counter substrate are cut into a desired shape. Furthermore, polarizing plates 835a and 835b are provided. Then, a flexible printed circuit board (hereinafter referred to as FPC) 837 is connected to the second terminal electrode 838b arranged in the external terminal connection area 852 with the anisotropic conductive film 836 interposed therebetween.

The structure of the liquid crystal module completed in this way will be described below. A pixel area 856 is arranged in the central part of the active matrix substrate. A plurality of pixels are formed in the pixel area 856. In FIG. 33A, gate signal line driving circuit regions 854 for driving gate signal lines are formed above and below the pixel region 856, respectively. A source signal line drive circuit area 857 that drives the source signal line is formed in the area between the pixel area 856 and the FPC837. It is also possible to arrange the gate signal line driving circuit area 854 on only one side, as long as the designer considers the size of the substrate in the liquid crystal module and selects it appropriately. Note that in consideration of the operating reliability or driving efficiency of the circuit, it is preferable to configure the gate signal line driving circuit region 854 to be symmetrical with the pixel region 856 sandwiched therebetween. In addition, signals are input from FPC837 to each drive circuit.

According to this embodiment mode, the same as in embodiment mode 3 can also be obtained Effect.

Embodiment Mode 32

Hereinafter, a liquid crystal display module according to Embodiment Mode 32 will be described with reference to FIGS. 34A and 34B and FIGS. 35A and 35B. In each drawing, the structure of the pixel portion 930 is the same as that of the pixel region 856 shown in Embodiment Mode 31, and a plurality of pixels are formed on the substrate 100.

FIG. 34A is a schematic plan view of the liquid crystal display module, and FIG. 34B is a diagram illustrating the circuit structure of the source driver 910. In the example shown in FIGS. 34A and 34B, as shown in FIG. 34A, both the gate driver 920 and the source driver 910 are integrally formed on the same substrate 100 as the pixel portion 930. As shown in FIG. 34B, the source driver 910 has a plurality of thin film transistors 912 that control to which source signal line the input video signal is transmitted, and a shift register 911 that controls the plurality of thin film transistors 912.

FIG. 35A is a schematic plan view of the liquid crystal display module, and FIG. 35B is a diagram illustrating the circuit structure of the source driver. In the example shown in FIGS. 35A and 35B, as shown in FIG. 35A, the source driver is composed of a thin film transistor group 940 formed on the substrate 100 and an IC 950 not formed on the substrate 100. The IC950 and the thin film transistor group 940 are electrically connected by, for example, an FPC960.

The IC950 is formed using, for example, a single crystal silicon substrate, and it controls the thin film transistor group 940 and inputs a video signal to the thin film transistor group 940. The thin film transistor group 940 controls to which source signal line the video signal is transmitted based on the control signal from the IC950.

According to the liquid crystal display module of Embodiment Mode 32, the same effects as Embodiment Mode 3 can also be obtained.

Embodiment Mode 33

38A and 38B are cross-sectional views illustrating the structure of a light emitting device according to the present invention. In this embodiment mode, an example in which the present invention is combined with self-luminous elements (EL elements, etc.) is shown.

Fig. 38A shows an example of a light-emitting device in which the structure of the present invention and a thin-film EL element are combined. The thin-film EL element has a light-emitting layer composed of a thin film of a light-emitting material, and emits light due to the collision of a light-emitting center or a host material caused by electrons accelerated by a high electric field.

Both lighting mechanisms are accepted. One is the donor-acceptor complex luminescence, in which the donor energy level and the acceptor energy level are used. The other is localized light emission using metal ion inner shell electron transitions. Generally, the thin-film type EL element performs localized light emission, and the dispersion type EL element performs donor-acceptor composite light emission.

The specific structure is shown below. FIG. 38A has a structure in which a top gate type thin film transistor 221 is used, and the use of the first electrode 201 and the second electrode 212 is similar to the structure of the liquid crystal display device according to Embodiment Mode 1. In other words, the first electrode 201 is formed on the substrate 200, the insulating film 202 is formed on the substrate 200 and the first electrode 201, and the thin film transistor 221 is formed on the insulating film 202. In addition, interlayer insulating films 206 and 207 are formed on the thin film transistor 221, and a second electrode 212 is formed on the interlayer insulating film 207. A slot is formed in the second electrode 212. In addition, slits may be formed in the first electrode 201. In this example mode In the formula, a layer 214 containing a luminescent material is formed on the second electrode 212.

By performing the same processing as in Embodiment Mode 2, the substrate 200, the first electrode 201, the insulating film 202, the thin film transistor 221, the interlayer insulating films 206 and 207, and the second electrode 212 are formed. Next, preferably, a dielectric 213 is formed on the second electrode 212, and a layer 214 containing a luminescent material is formed on the dielectric 213. However, the present invention is not limited to this structure. The dielectric 213 does not necessarily need to be formed. In the case where the dielectric 213 is not formed, the interlayer insulating films 206 and 207 are used as the dielectric. In addition, the second substrate 220 is disposed on the layer 214 containing the luminescent material, with the protective layer 215 sandwiched therebetween.

The luminescent material is composed of a parent material and a luminescent center. As the luminescence center of local light emission, manganese (Mn), copper (Cu), samarium (Sm), pomium (Tb), erbium (Er), thion (Tm), europium (Eu), cerium (Ce) can be used Or wrong (Pr), etc. In addition, halogen elements such as fluorine (F) or chlorine (Cl) may also be added as charge compensation.

As a luminescence center for donor-acceptor composite luminescence, a luminescent material containing a first impurity element that forms a donor level and a second impurity element that forms an acceptor level can be used. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), etc. can be used. As the second impurity element, for example, copper (Cu), silver (Ag), or the like can be used.

Sulfides, oxides, or nitrides can be used as the parent material of the luminescent material. As the sulfide, for example, zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y₂S₃), gallium sulfide (Ga₂S₃), strontium sulfide (SrS), barium sulfide (BaS), etc. As the oxide, for example, zinc oxide (ZnO) or yttrium oxide ( Y₂O₃)Wait.

As the nitride, for example, aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), or the like can be used. Furthermore, zinc selenide (ZnSe), zinc telluride (ZnTe), or the like can also be used. Or, it can be calcium gallium sulfide (CaGa₂S₄), strontium gallium sulfide (SrGa₂S₄) Or barium gallium sulfide (BaGa₂S₄) And other ternary mixed crystals. As long as these matrix materials and luminescent centers are appropriately combined to form luminescent materials.

In many cases, thin-film type EL elements perform localized light emission, and dispersion type EL elements perform donor-acceptor composite light emission. In the case of adopting the structure shown in FIG. 38A, it is preferable to use the luminescent center of localized light emission to form a luminescent material (such as ZnS: Mn, ZnS: Cu, Cl, etc.).

Fig. 38B shows an example of a light-emitting device formed by combining the structure of the present invention and a dispersion-type EL element. The dispersion type EL element has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder, and, like a thin-film EL element, is excited by the collision of the light-emitting center or the matrix material caused by electrons accelerated by a high electric field to obtain light. . In the case of a dispersion-type EL element, a layer 224 containing a light-emitting material is formed on the second electrode, and the layer 224 containing a light-emitting material is in contact with the second electrode 212.

As the light-emitting material dispersed in the binder, the light-emitting material described above can be used like a thin-film EL element. In addition, in the case of a dispersion type EL element, it is preferable to use the luminescent center of the donor-acceptor composite luminescence to form a luminescent material (for example, ZnS: Ag, Cl, ZnS: Cu, Al, etc.). In addition, the light-emitting material is not limited to the above-mentioned inorganic substances, and light-emitting materials composed of organic substances (for example, rubrene, 9,10-two Phenylanthracene, etc.).

As the binder that can be used for the dispersion-type EL element, an organic material or an inorganic material can be used, or a mixed material of an organic material and an inorganic material can also be used. As the organic material, polymers with relatively high dielectric constants such as cyanoethyl cellulose resins, polyethylene, polypropylene, polystyrene resins, silicone resins, epoxy resins, and vinylidene fluoride can be used. Resins such as vinyl. In addition, heat-resistant polymers such as aromatic polyamides and polybenzimidazole, or silicone resins can also be used.

In addition, vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenolic resins, novolac resins, acrylic resins, melamine resins, polyurethane resins, and oxazole resins (polybenzoxazole) can also be used. Resin material. In addition, a photocurable resin or the like can also be used. Furthermore, barium titanate (BaTiO₃) Or strontium phthalate (SrTiO₃) And other fine particles with high dielectric constant can also be returned to these resins in an appropriate amount to adjust the dielectric constant.

As the inorganic material used for the adhesive, a material selected from the following materials can be used: silicon oxide (SiO_x), silicon nitride (SiN_x), silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, aluminum oxide (Al₂O₃), titanium oxide (TiO₂), BaTiO₃, SrTiO₃, Lead titanate (PbTiO₃), potassium niobate (KNbO₃), lead niobate (PbNbO₃), tantalum oxide (Ta₂O₅), barium tantalate (BaTa₂O₆), lithium tantalate (LiTaO₃), yttrium oxide (Y₂O₃), Zirconia (ZrO₂), ZnS or other substances containing inorganic materials. When an inorganic material with a high dielectric constant is contained in the organic material (by addition, etc.), the dielectric constant of the layer containing the luminescent substance formed by the luminescent material and the binder can be controlled, and the dielectric constant can also be made The number is higher.

In addition, by applying a voltage between a pair of electrode layers, the EL element can obtain light emission. In this embodiment mode, AC drive is preferably used. This is because the EL light-emitting element shown in this embodiment mode realizes light emission by using the electric field generated by the first electrode 201 and the second electrode 212. In addition, the electric field generated for light emission is the same as the electric field in the liquid crystal display device described in the other embodiment modes.

As shown in this embodiment mode, by forming an insulating film on the first electrode, the interval between the electrodes can be controlled. For example, as the structure shown in this embodiment mode, by controlling the interval between the electrodes, a microcavity effect can be obtained between the first electrode and the second electrode, and a light-emitting device with good color purity can be formed.

As described above, the scope of application of the present invention is extremely wide, and it can be applied to electronic devices in all fields.

In addition, the present invention is not limited to the embodiment modes described above, and can be changed into various forms without departing from the spirit of the present invention.

Embodiment Mode 34

Hereinafter, an electronic device according to Embodiment Mode 34 of the present invention will be described with reference to FIGS. 36A to 36H, wherein the electronic device is configured with the display device or display module shown in any embodiment mode described above.

Examples of the electronic equipment include image capturing devices such as video cameras and digital cameras, goggles-type displays (head-mounted displays), navigation systems, sound reproduction devices (car audio components, etc.), computers, games Devices, portable information terminals (mobile computers, mobile phones, portable game consoles or e-books, etc.), and video reproduction equipment equipped with recording media (specifically, recording media such as digital versatile discs (DVD) that can be reproduced The display device that displays its image) and so on. 36A to 36H show specific examples of these electronic devices.

Fig. 36A is a monitor of a television receiver or a personal computer. It includes a housing 2001, a stand 2002, a display unit 2003, a speaker unit 2004, a video input terminal 2005, and so on. The display device or display module shown in any embodiment mode described above is applicable to the display unit 2003. By having the display device or the display module, the freedom of the interval between the pixel electrode and the common electrode is improved. Since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be set freely. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. In particular, in a display device using liquid crystal, it is possible to control the liquid crystal molecules aligned parallel to the substrate in a direction parallel to the substrate (so-called parallel alignment), so the viewing angle can be enlarged by applying the most suitable electric field. In addition, when a part of the pixel electrode having the same potential as the one is arranged under the drain or source of the thin film transistor, the potential of the drain or source is stabilized. As a result, the interval between the opening patterns of the electrodes can be reduced, and the electric field is applied smoothly, so it is easy to control the liquid crystal molecules. In addition, since the voltage can be reduced by reducing the interval of the opening pattern of the electrode, the power consumption can be reduced.

Figure 36B is a digital camera. An image receiving unit 2103 is provided on the front part of the main body 2101, and a shutter 2106 is provided on the upper part of the main body 2101. In addition, a display portion 2102, operation keys 2104, and an external connection port 2105 are provided on the back portion of the main body 2101. The display device or display module shown in any embodiment mode described above is applicable to the display portion 2102. By having the display device or the display module, the same effect as the above-mentioned embodiment mode can be obtained. For example, the degree of freedom of the interval between the pixel electrode and the common electrode is improved. As a result, since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be set freely. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. Especially in a display device using liquid crystal, it is possible to control the liquid crystal molecules oriented parallel to the substrate in a direction parallel to the substrate (so-called parallel alignment), so it is possible to provide a liquid crystal display device or a liquid crystal module with a large viewing angle The product.

Figure 36C is a notebook personal computer. A keyboard 2204, an external connection port 2205, and a pointing device 2206 are provided in the main body 2201. In addition, the main body 2201 is equipped with a housing 2202 having a display portion 2203. The display device or display module shown in any embodiment mode described above is applicable to the display portion 2203. By having the display device or the display module, the same effect as the above-mentioned embodiment mode can be obtained. For example, the degree of freedom of the interval between the pixel electrode and the common electrode is improved. Since the arrangement interval of the opening pattern of the pixel electrode or the most suitable value of the width of the opening pattern depends on the pixel The distance between the electrode and the common electrode, so the size, width and interval of the opening pattern can be freely set. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. Especially in a display device using liquid crystal, it is possible to control the liquid crystal molecules oriented parallel to the substrate in a direction parallel to the substrate (so-called parallel alignment), so it is possible to provide a liquid crystal display device or a liquid crystal module with a large viewing angle The product.

36D is a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. An active matrix display device is provided in the display portion 2302. The display device or display module shown in any embodiment mode described above is applicable to the display portion 2302. By having the display device or the display module, the same effect as the above-mentioned embodiment mode can be obtained. For example, the degree of freedom of the interval between the pixel electrode and the common electrode is improved. Since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be freely set. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. Especially in a display device using liquid crystal, it is possible to control the liquid crystal molecules oriented parallel to the substrate in a direction parallel to the substrate (so-called parallel alignment), so it is possible to provide a liquid crystal display device or a liquid crystal module with a large viewing angle The product.

Fig. 36E shows a video reproduction device. The main body 2401 is provided with a display portion 2404, a recording medium reading portion 2405, and operation keys 2406. Other In addition, the main body 2401 is mounted with a frame 2402 having a speaker portion 2407 and a display portion 2403. The display device or display module shown in any embodiment mode described above is applicable to the display portion 2403 and the display portion 2404. By having the display device or the display module, the same effect as the above-mentioned embodiment mode can be obtained. For example, the degree of freedom of the interval between the pixel electrode and the common electrode is improved. Since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be freely set. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. Especially in a display device using liquid crystal, it is possible to control the liquid crystal molecules oriented parallel to the substrate in a direction parallel to the substrate (so-called parallel alignment), so it is possible to provide a liquid crystal display device or a liquid crystal module with a large viewing angle The product.

Figure 36F is an e-book. Operation keys 2503 are provided in the main body 2501. In addition, a plurality of display portions 2502 are installed in the main body 2501. The display device or display module shown in any embodiment mode described above is applicable to the display portion 2502. By having the display device or the display module, the same effect as the above-mentioned embodiment mode can be obtained. For example, the degree of freedom of the interval between the pixel electrode and the common electrode is improved. Since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be freely set. In addition, the gradient of the electric field applied between the electrodes can be controlled, so for example, it can be easily increased in the direction parallel to the substrate. The electric field on, and so on. In other words, in a display device using liquid crystal, it is possible to control the liquid crystal molecules aligned parallel to the substrate in a direction parallel to the substrate (so-called parallel alignment), so that a liquid crystal display device or a liquid crystal module with a large viewing angle can be provided The product.

FIG. 36G shows a video camera. The main body 2601 is provided with an external connection port 2604, a remote control receiving unit 2605, an image receiving unit 2606, a battery 2607, an audio input unit 2608, operation keys 2609, and a viewfinder 2610. In addition, the main body 2601 is equipped with a frame 2603 having a display portion 2602. The display device or display module shown in any embodiment mode described above is applicable to the display portion 2602. By having the display device or the display module, the same effect as the above-mentioned embodiment mode can be obtained. For example, the degree of freedom of the interval between the pixel electrode and the common electrode is improved. Since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be freely set. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. Especially in a display device using liquid crystal, it is possible to control the liquid crystal molecules oriented parallel to the substrate in a direction parallel to the substrate (so-called parallel alignment), so it is possible to provide a liquid crystal display device or a liquid crystal module with a large viewing angle The product.

36H is a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The display device or display module shown in any embodiment mode described above is suitable for a display portion 2703. By having the display device or the display module, the same effect as the above-mentioned embodiment mode can be obtained. For example, the degree of freedom of the interval between the pixel electrode and the common electrode is improved. Since the most suitable value of the arrangement interval of the opening pattern of the pixel electrode or the width of the opening pattern depends on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be freely set. Also, the gradient of the electric field applied between the electrodes can be controlled, so for example, the electric field in the direction parallel to the substrate can be easily increased, and so on. Especially in a display device using liquid crystal, it is possible to control the liquid crystal molecules oriented parallel to the substrate in a direction parallel to the substrate (so-called parallel alignment), so it is possible to provide a liquid crystal display device or a liquid crystal module with a large viewing angle The product.