Display device

display device {DISPLAY DEVICE}

The present invention relates to a semiconductor device and a liquid crystal display device. In particular, it relates to a display device for controlling liquid crystal molecules by generating an electric field substantially parallel to a substrate.

One of the technological development policies of liquid crystal display devices is to widen the viewing angle. As a technique for realizing a wide viewing angle, a method of generating an electric field substantially parallel to the substrate, operating liquid crystal molecules in a plane parallel to the substrate, and controlling the gradation is used. As such, there are In-Plane Switching (IPS) and Fringe-Field Switching (FFS). In the FFS, a second electrode having an opening pattern (for example, a pixel electrode whose voltage is controlled for each pixel) is disposed below the liquid crystal, and a first electrode (for example, all elements) is disposed below the opening pattern. A common electrode to which a common voltage is supplied) is disposed. An electric field is applied between the pixel electrode and the common electrode to control the liquid crystal. Since an electric field is applied to the liquid crystal in a direction parallel to the substrate, the liquid crystal molecules can be controlled by using the electric field. That is, since the liquid crystal molecules aligned parallel to the substrate (so-called horizontal alignment) can be controlled in the direction parallel to the substrate, the viewing angle is widened.

The first electrode (common electrode) is formed in direct contact with the glass substrate, and the gate electrode in the inverted staggered transistor is also formed in direct contact with the glass substrate. An insulating film functioning as a gate insulating film in an inverted staggered transistor is formed in direct contact thereon. Then, a second electrode (pixel electrode) is formed thereon (see Patent Document 1).

Alternatively, the first electrode (common electrode) is formed in direct contact with the insulating film functioning as the gate insulating film in the inverted staggered transistor. Further, the semiconductor film, the source electrode and the drain electrode are also formed in direct contact with the insulating film functioning as the gate insulating film in the inverted staggered transistor. Then, an insulating layer is formed in direct contact thereon. Then, a second electrode (pixel electrode) is formed in direct contact thereon (refer to Patent Document 1).

<p><patcit num="0001"><text>Japanese Patent Laid-Open No. 2000-89255</text></patcit></p>

<p>In the above-mentioned conventional example, the electrode for driving the liquid crystal was disposed with one insulating film interposed therebetween. Therefore, even if it tried to enlarge the distance between an electrode and an electrode, there existed a limit. If the thickness of the insulating film between the electrodes is increased, for example, the gate insulating film of the transistor also becomes thick, so that the current driving capability of the transistor is reduced.</p><p>In addition, the optimum value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies according to the distance between the pixel electrode and the common electrode. Therefore, when the distance between the pixel electrode and the common electrode cannot be freely set, the spacing of the opening patterns and the width of the opening patterns of the pixel electrodes must be selected to be greatly limited. Therefore, the magnitude or direction of the electric field applied to the liquid crystal molecules is insufficient.</p><p>The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a display device capable of improving the degree of freedom of the distance between two electrodes of a display device and applying an optimal electric field between the electrodes, and a method for manufacturing the same will do</p>

<p>In order to solve the above problem, a semiconductor device according to the present invention includes a first electrode formed above a substrate, a first insulating film formed above the first electrode, a semiconductor film formed above the first insulating film, and a semiconductor film. A second insulating film formed above, a conductive film formed above the second insulating film, a third insulating film formed above the conductive film, and a second electrode formed above the third insulating film and having an opening pattern.</p><p>A liquid crystal display device according to the present invention includes a first electrode formed above a substrate, a first insulating film formed above the first electrode, a semiconductor film formed above the first insulating film, and a second insulating film formed above the semiconductor film a conductive film formed above the second insulating film; a third insulating film formed above the conductive film; a second electrode formed above the third insulating film and having an opening pattern; and a liquid crystal disposed above the second electrode to provide</p><p>In this semiconductor device and liquid crystal display device, the first electrode is disposed on the substrate, that is, under the semiconductor film. In addition, since the second electrode is disposed above the conductive film (eg, the gate electrode or the source electrode of the transistor) or the third insulating film, the gap between the first electrode and the second electrode is larger than that of the prior art. can be widened Further, the thickness of the first insulating film has little influence on other elements, such as a transistor, even if the thickness is changed. Therefore, the thickness can be arbitrarily changed, and as a result, the distance between the first electrode and the second electrode can be freely set. Accordingly, the degree of freedom of the distance between the first electrode and the second electrode is improved. Then, it becomes possible to control the gradient of the electric field applied between the electrodes, and for example, it is possible to easily increase the electric field in the direction parallel to the substrate. That is, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called horizontal orientation) can be controlled in a direction parallel to the substrate. all.</p><p>In addition, the opening pattern generates an electric field in a direction substantially parallel to the substrate between the first electrode and the second electrode. Therefore, various shapes can be made as long as an electric field in a direction substantially parallel to the substrate can be generated.</p><p>Therefore, in the opening pattern, not only a closed opening pattern such as a slit, but also a space between the comb teeth in the comb-shaped electrode, for example, is located between the conductor patterns, and the conductor pattern is not formed. includes space. That is, it is sufficient that there is a gap or a gap between the electrode and the electrode. Hereinafter, it is the same.</p><p>Another semiconductor device according to the present invention includes a first electrode formed above a substrate, a first insulating film formed above the first electrode, a semiconductor film formed above the first insulating film, a conductive film formed above the semiconductor film, , a second insulating film formed above the conductive film, and a second electrode formed above the second insulating film and having an opening pattern.</p><p>According to this semiconductor device and liquid crystal display device, the first electrode is formed and disposed on the substrate, that is, under the semiconductor film. In addition, since the second electrode is disposed above the conductive film (eg, the source electrode, etc.) or the insulating film, the distance between the first electrode and the second electrode can be widened as compared with the related art. Further, the thickness of the first insulating film has little influence on other elements, such as a transistor, even if the thickness is changed. Therefore, the thickness can be arbitrarily changed, and as a result, the distance between the first electrode and the second electrode can be freely set. Accordingly, the degree of freedom of the distance between the first electrode and the second electrode is improved. Then, it becomes possible to control the gradient of the electric field applied between the electrodes, and for example, it is possible to easily increase the electric field in the direction parallel to the substrate. That is, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called horizontal orientation) can be controlled in a direction parallel to the substrate, so that the viewing angle is different by applying an optimal electric field. .</p><p>Another semiconductor device according to the present invention includes a first electrode formed above a substrate, a first insulating film formed above the first electrode, a conductive film formed above the first insulating film, a semiconductor film formed above the conductive film, , a second insulating film formed above the semiconductor film, and a second electrode formed above the second insulating film and having an opening pattern.</p><p>According to this semiconductor device and the liquid crystal display device, the first electrode is disposed above the substrate, that is, below the semiconductor film, and is formed under the conductive film (eg, the gate electrode). In addition, since the second electrode is disposed above the second insulating film, it is possible to increase the distance between the first electrode and the second electrode as compared with the related art. In addition, the thickness of the second insulating film does not significantly affect other elements, such as a transistor, even if the thickness is changed. Therefore, the thickness can be arbitrarily changed, and as a result, the distance between the first electrode and the second electrode can be freely set. Accordingly, the degree of freedom of the distance between the first electrode and the second electrode is improved. Further, since the gradient of the electric field applied between the electrodes can be controlled, it is possible to easily increase the electric field in a direction parallel to the substrate, for example. That is, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called horizontal orientation) can be controlled in a direction parallel to the substrate, so that by applying an optimal electric field, the viewing angle is widened. .</p><p>In another semiconductor device according to the present invention, in the above configuration, the first electrode is a common electrode and the second electrode is a pixel electrode.</p><p>In another semiconductor device according to the present invention, in the above configuration, the first electrode is a pixel electrode, and the second electrode is a common electrode.</p><p>Another liquid crystal display device according to the present invention includes a first electrode formed above a substrate, a first insulating film formed above the first electrode, a semiconductor film formed above the first insulating film, and a conductive film formed above the semiconductor film and a second insulating film formed above the conductive film, a second electrode formed above the second insulating film and having an opening pattern, and a liquid crystal arranged above the second electrode.</p><p>Another liquid crystal display device according to the present invention includes a first electrode formed above a substrate, a first insulating film formed above the first electrode, a conductive film formed above the first insulating film, and a semiconductor film formed above the conductive film and a second insulating film formed above the semiconductor film, a second electrode formed above the second insulating film and having an opening pattern, and a liquid crystal disposed above the second electrode.</p><p>In another liquid crystal display device according to the present invention, in the above configuration, the liquid crystal is controlled by the electric field between the first electrode and the second electrode.</p><p>In another liquid crystal display device according to the present invention, in the above configuration, the first electrode is a common electrode and the second electrode is a pixel electrode.</p><p>In another liquid crystal display device according to the present invention, in the above configuration, the first electrode is a pixel electrode and the second electrode is a common electrode.</p><p>In addition, the switch shown in this invention can use a switch of various forms, and there exist an electrical switch, a mechanical switch, etc. as an example. That is, as long as the flow of current can be controlled, it is not limited to a specific thing, and various things can be used. For example, a transistor may be sufficient, a diode (PN diode, PIN diode, Schottky diode, diode-connected transistor, etc.) may be sufficient, and a logic circuit combining them may be sufficient. Therefore, when a transistor is used as a switch, since the transistor operates as a simple switch, the polarity (conduction type) of the transistor is not particularly limited. However, when it is desirable to have a smaller off current, it is preferable to use a transistor having a polarity having a smaller off current. As a transistor with a small off-state current, there are those in which the LDD region is formed, those having a multi-gate structure, and the like. In the case of operating in a state where the potential of the source terminal of the transistor operated as a switch is close to the low-potential power supply (Vss, GND, 0V, etc.) When operating in a state close to the power supply (Vdd, etc.), it is preferable to use the P-channel type. This is because it is easy to operate as a switch since the absolute value of the voltage between the gate and source can be increased. Further, both the N-channel type and the P-channel type may be used, and a CMOS type switch may be used. When the CMOS switch is used, even when the voltage output through the switch (ie, input voltage) is high or low with respect to the output voltage, and the situation changes, it can operate appropriately. Further, as the switch in the present invention, for example, a TFT for controlling a pixel electrode and a switch element used for a driving circuit section can be mentioned. If it is a part, you can use a switch.</p><p>In addition, in this invention, the meaning of being connected shall include the case where electrically connected and the case where it is directly connected. Accordingly, in the configuration disclosed by the present invention, in addition to a predetermined connection relationship, other elements that enable electrical connection therebetween (for example, switches, transistors, capacitors, inductors, resistors, diodes, etc.) may be arranged. Alternatively, it may be arranged without interposing other elements therebetween. In addition, when any two conductive films are not electrically connected without interposing the other element which enables electrical connection between them, it describes that they are directly connected or directly connected. In addition, the case where it is electrically connected includes the case where it is electrically connected and the case where it is directly connected.</p><p>In addition, various forms can be applied to the display element, a display apparatus, and a light emitting device of this invention, and can have various elements. In the present invention, a liquid crystal element can be used. A liquid crystal element is an element that controls light transmission or non-transmission by the optical modulation action of liquid crystal, and is constituted by a pair of electrodes and liquid crystal. As a display device using a liquid crystal element, there are a liquid crystal display, a transmissive liquid crystal display, a transflective liquid crystal display, a reflective liquid crystal display, and the like. Incidentally, for example, an EL element (the EL element refers to an element having a light emitting layer capable of obtaining luminescence generated by applying an electric field). In addition, organic EL devices, inorganic EL devices or EL devices including organic and inorganic materials are included), electron-emitting devices, electronic inks, diffracted light valves (GLVs), plasma displays (PDPs), digital micromirror devices (DMDs) , a piezoelectric ceramic display, a carbon nano tube, etc. may be provided with a display medium whose contrast is changed by an electromagnetic action. In addition, as a display device using the EL device, there are an EL display, and as a display device using the electron-emitting device, there are a field emission type display (FED), a surface-conduction electron-emitter display (SED), etc., In addition, as a display device using electronic ink, there is an electronic paper.</p><p>Further, in the present invention, various types of transistors can be applied as the transistor. Therefore, there is no limitation on the types of transistors that can be applied. Accordingly, a thin film transistor (TFT) using a non-single crystal semiconductor film typical of amorphous silicon or polycrystalline silicon, a transistor formed using a semiconductor substrate or an SOI substrate, a MOS transistor, a junction transistor, a bipolar transistor, ZnO, a-InGaZnO, etc. Transistors using compound semiconductors, transistors using organic semiconductors or carbon nanotubes, and other transistors can be applied. In addition, various types of the board|substrate on which a transistor is arrange|positioned can be used, and it is not limited to a specific thing. Accordingly, for example, it can be disposed on a glass substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, or the like. In the case of a reflective display, a single crystal substrate or an SOI substrate can also be used. Alternatively, a transistor may be formed on one substrate, then the transistor may be moved to another substrate and placed on another substrate.</p><p>In addition, as already explained, various types of transistors in this invention can be used, and it can form on various board|substrates. Therefore, all circuits may be formed on a glass substrate, and may be formed in a plastic substrate. In the case where the product to be produced is a reflective display, it may be formed on a single crystal substrate or on an SOI substrate. That is, it may be formed on any substrate. When all circuits are formed on the same board, it is possible to reduce the number of parts to reduce cost, to reduce the number of connection points with circuit parts, and to reduce the number of connection points to circuit parts and improve reliability. In addition, a part of a circuit may be formed in a certain board|substrate, and another part of a circuit may be formed in another board|substrate. That is, not all of the circuits may be formed on the same substrate. For example, a part of the circuit is formed using a transistor on a glass substrate, and the other part of the circuit is formed on a single crystal substrate, and the IC chip is connected by COG (Chip On Glass) and placed on the glass substrate. good. Further, the IC chip may be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed circuit board. In this way, when a part of the circuit is formed on the same board, it is possible to reduce the number of parts and reduce costs, reduce the number of connection points with circuit parts, and improve reliability. In addition, since power consumption is increased for a portion with a high driving voltage or a portion with a high driving frequency, if such a portion is not formed on the same substrate, an increase in power consumption can be prevented.</p><p>In addition, the structure of a transistor can take various forms, and is not limited to a specific structure. For example, a multi-gate structure in which the number of gate electrodes is two or more may be used. By adopting the multi-gate structure, the off-state current is reduced, the reliability is improved by improving the withstand voltage of the transistor, and the drain-source current is reduced even when the drain-source voltage changes when operating in the saturation region. It does not change much and can be set as a flat characteristic. Moreover, the structure in which the gate electrode is arrange|positioned above and below a channel may be sufficient. By adopting a structure in which the gate electrodes are arranged above and below the channel, the channel region increases, so that the current value is increased and the depletion layer is easily formed, so that the S value can be decreased. Moreover, the structure in which the gate electrode is arrange|positioned above a channel may be sufficient, and the structure in which the gate electrode is arrange|positioned below a channel may be sufficient. Moreover, a forward stagger structure may be sufficient, and a reverse stagger structure may be sufficient. Further, the channel region may be divided into a plurality of regions, may be connected in parallel, or may be connected in series. Further, a source electrode or a drain electrode may overlap the channel (or a part thereof). When the channel (or a part thereof) has a structure in which the source electrode and the drain electrode overlap, it is possible to prevent an increase in charge in a part of the channel and unstable operation. In addition, there may be an LDD area. By forming the LDD region, the off-state current is reduced, the withstand voltage of the transistor is improved to improve reliability, and the drain-source current is reduced even when the drain-source voltage changes when operating in the saturation region. It does not change much and can be set as a flat characteristic.</p><p>Incidentally, in the present invention, each pixel represents one element capable of controlling the brightness. Accordingly, as an example, one pixel represents one color element, and one color element represents the brightness. Therefore, in that case, in the case of a color display device comprising R (red), G (green), and B (blue) color elements, the minimum unit of an image is three of R pixels, G pixels, and B pixels. It is assumed to be composed of pixels. In addition, the color element is not limited to three colors, and more may be sufficient, for example, there exist RGBW (W is white), and the thing which added yellow, indigo blue, and magenta to RGB. As another example, when brightness is controlled by using a plurality of regions for one color element, one pixel for one of the regions is used. Accordingly, as an example, in the case of performing area gradation, there are a plurality of regions for controlling brightness in one color element, and gradation is expressed in all of them, but one pixel is for one region for controlling brightness. Therefore, in that case, it is assumed that one color element is composed of a plurality of pixels. In addition, in that case, the size of the region contributing to the display may differ depending on the pixel. In addition, in a region where there are a plurality of color elements for controlling the brightness, that is, in a plurality of pixels constituting one color element, the signals supplied to each are slightly different, and the viewing angle is widened. also good In the case of describing one pixel (for three colors), it is assumed that three pixels of R, G, and B are considered as one pixel. In the case of describing one pixel (for one color), it is assumed that when there are a plurality of pixels for one color element, they are combined to be considered as one pixel.</p><p>Further, in the present invention, pixels are arranged (arranged) in a matrix state. Here, the arrangement (arrangement) of pixels in a matrix includes a case in which the pixels are arranged in a so-called lattice state in which vertical and horizontal stripes are combined. In the case of full-color display using three color elements (eg, RGB), there is also a case in which dots of three color elements are arranged in so-called delta arrangement. In addition, the case where the bay is arranged is also included. Note that the color elements are not limited to three colors, and more may be used, for example, RGBW (W is white), yellow, indigo, and magenta are added. Further, the size of the light emitting region may be different for each color element.</p><p>A transistor is an element each having at least three terminals including a gate, a drain, and a source, and has a channel formation region between the drain region and the source region. Here, since the source and drain of the transistor change depending on the structure and operating conditions of the transistor, it is difficult to define which one is the source or the drain. Therefore, in the present invention, the regions functioning as the source and drain regions are referred to as a first terminal and a second terminal, respectively.</p><p>In addition, a gate refers to the whole including a gate electrode and a gate wiring (it is also called a gate line, a gate signal line, etc.), or a part of them. The gate electrode means a semiconductor forming a channel region, a light doped drain (LDD) region, or the like, and a conductive film overlapping with a gate insulating film interposed therebetween. A gate wiring means the thing of wiring for connecting between the gate electrodes of each pixel, or connecting a gate electrode and another wiring.</p><p>However, there is a part that functions also as a gate electrode and also functions as a gate wiring. Such a region may be called a gate electrode or a gate wiring. That is, there is also a region where the gate electrode and the gate wiring cannot be clearly distinguished. For example, when there is a channel region overlapping a gate wiring arranged to extend, the region functions as a gate wiring, but also functions as a gate electrode. Therefore, such a region may be called a gate electrode or a gate wiring.</p><p>In addition, a region formed of the same material as the gate electrode and electrically connected to the gate electrode may also be called a gate electrode. Similarly, a region formed of the same material as the gate wiring and electrically connected to the gate wiring may also be referred to as a gate wiring. In a strict sense, such a region may not overlap the channel region or may not have a function of connecting to another gate electrode. However, in relation to reduction in manufacturing cost or process, or simplification of layout, there is a region formed of the same material as the gate electrode or the gate wiring and electrically connected to the gate electrode or the gate wiring. Accordingly, such a region may also be referred to as a gate electrode or a gate wiring.</p><p>Further, for example, in a multi-gate transistor, the gate electrode of one transistor and the gate electrode of the other transistor are often connected by a conductive film formed of the same material as the gate electrode. Since such a region is a region for connecting the gate electrode and the gate electrode, it may be called a gate wiring, but since a multi-gate transistor can be regarded as a single transistor, it may be called a gate electrode. That is, a gate electrode or a gate wiring formed from the same material and disposed in electrical connection therewith may be referred to as a gate electrode or a gate wiring. In addition, for example, the conductive film of the part which connects the gate electrode and the gate wiring may also be called a gate electrode, and may be called a gate wiring.</p><p>In addition, a gate terminal points out the part with respect to the area|region of a gate electrode, and the area|region electrically connected with the gate electrode.</p><p>In addition, the source refers to the whole including the source region, the source electrode, and the source wiring (also referred to as a source line or a source signal line), or a part thereof. The source region means a semiconductor region containing a large amount of P-type impurities (such as boron and gallium) and N-type impurities (such as phosphorus and arsenic). Therefore, the source region does not contain a region containing only a small amount of P-type impurity or N-type impurity, a so-called LDD (Lightly Doped Drain) region. The source electrode means a conductive layer formed of a material different from that of the source region and disposed in electrical connection with the source region. However, the source electrode is also referred to as a source electrode including the source region. A source wiring means wiring for connecting between source electrodes of each pixel, or for connecting a source electrode and another wiring.</p><p>However, there is also a part that functions also as a source electrode and also functions as a source wiring. Such a region may be called a source electrode or a source wiring. That is, there is also a region where the source electrode and the source wiring cannot be clearly distinguished. For example, when there is a source region overlapping a source wiring arranged to be extended, the region functions as a source wiring, but also functions as a source electrode. Therefore, such a region may be called a source electrode or a source wiring.</p><p>In addition, a region formed of the same material as the source electrode and electrically connected to the source electrode or a portion connecting the source electrode and the source electrode may be referred to as a source electrode. Note that the portion overlapping the source region may also be referred to as a source electrode. Similarly, a region formed of the same material as the source wiring and electrically connected to the source wiring may also be referred to as a source wiring. In a strict sense, such a region may not have a function of being connected to another source electrode. However, in relation to reduction in manufacturing cost or process, or simplification of layout, there is a region formed of the same material as the source electrode or source wiring and electrically connected to the source electrode or source wiring. Accordingly, such a region may also be referred to as a source electrode or a source wiring.</p><p>Note that, for example, the conductive film at a portion connecting the source electrode and the source wiring may also be called a source electrode or a source wiring.</p><p>In addition, a source terminal points out the part with respect to the area|region of a source electrode or the area|region electrically connected with a source electrode.</p><p>In addition, about the drain, it means to include a drain region, a drain electrode, and a drain wiring, and the usage method of the word in this specification is the same as that of a source. Moreover, also about a drain terminal, it is used similarly to a source terminal.</p><p>In addition, in the present invention, a semiconductor device means a device having a circuit including a semiconductor element (transistor, diode, etc.). Moreover, the overall device which can function by using semiconductor characteristics may be sufficient. In addition, a display device means a device which has a display element (a liquid crystal element, a light emitting element, etc.). Further, a display panel body in which a plurality of pixels including display elements such as liquid crystal elements and EL elements or peripheral driving circuits for driving these pixels are formed on a substrate may be used. In addition, a flexible printed circuit (FPC) or a printed wiring board (PWB) may be included in the display panel. Further, the light emitting device means a display device having a display device of a self-emission type such as an EL device or an device used as an FED in particular. A liquid crystal display device means a display device having a liquid crystal element.</p><p>In addition, in this invention, it is not limited to being in direct contact on any thing, about the description of being formed on a certain thing, or being formed on a certain water, about a certain thing, or a certain water phase. The case where it is not in direct contact, that is, the case where another thing is pinched|interposed is also included. Therefore, for example, in the case where the layer B is formed on the layer A (or on the layer A), the case where the layer B is directly in contact with the layer A and the case where the layer B is formed directly on the layer A and the other layer in direct contact with the layer A (For example, layer C, layer D, etc.) is formed, and the case where the layer B is formed in direct contact with it is included. In addition, the same applies to the description of above any one, and it is not limited to being in direct contact with the above one, but also includes the case where another is sandwiched therebetween. Therefore, for example, in the case where the layer B is formed above the layer A, the case where the layer B is formed in direct contact with the layer A, and in the case where the layer B is formed directly on the layer A layer C, layer D, etc.) is formed, and the layer B is formed in direct contact thereon. In addition, the same applies to the case of under any one and below any one, the case where it is in direct contact, and the case where it is not in contact is included. In addition, when describing above any of these here, with reference to the board|substrate which forms an electrode, let the side which forms an electrode be upward.</p>

<p>According to the present invention, the space between the first electrode and the second electrode can be widened, and the space can be controlled without affecting other elements, so the degree of freedom of the space is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. have. Further, since the gradient of the electric field added between the electrodes can be controlled, it is possible to easily increase the electric field in a direction parallel to the substrate, for example. In particular, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called vertical alignment) can be controlled in a direction parallel to the substrate, so by applying an optimal electric field, the viewing angle is widened. all.</p>

Fig. 1A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a second embodiment, and Fig. 1B is a cross-sectional view taken along EF and GH of Fig. 1A. Fig. 2A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to the second embodiment, and Fig. 2B is a cross-sectional view taken along EF and GH of Fig. 2A. Fig. 3A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a third embodiment, and Fig. 3B is a cross-sectional view taken along EF and GH of Fig. 3A. Fig. 4A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to the fourth embodiment, and Fig. 4B is a cross-sectional view taken along line AB and section CD of Fig. 4A. Fig. 5A is a plan view for explaining the configuration of an IPS type liquid crystal display device according to a fifth embodiment, and Fig. 5B is a cross-sectional view taken along line AB and CD of Fig. 5A. Fig. 6A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to the sixth embodiment, and Fig. 6B is a cross-sectional view taken along EF and GH of Fig. 6A. Fig. 7A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to the seventh embodiment, and Fig. 7B is a cross-sectional view taken along EF and GH of Fig. 7A. Fig. 8A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to the eighth embodiment, and Fig. 8B is a cross-sectional view taken along EF and GH of Fig. 8A. Fig. 9A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to the ninth embodiment, and Fig. 9B is a cross-sectional view taken along EF and GH of Fig. 9A. Fig. 10A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a tenth embodiment, and Fig. 10B is a cross-sectional view taken along EF and GH of Fig. 10A. Fig. 11A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to an eleventh embodiment, and Fig. 11B is a cross-sectional view taken along EF and GH of Fig. 11A. Fig. 12A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a twelfth embodiment, and Fig. 12B is a cross-sectional view taken along EF and GH of Fig. 12A. Fig. 13A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a thirteenth embodiment, and Fig. 13B is a cross-sectional view taken along EF and GH of Fig. 13A. Fig. 14A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a fourteenth embodiment, and Fig. 14B is a cross-sectional view taken along EF and GH of Fig. 14A. Fig. 15A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to the fifteenth embodiment, and Fig. 15B is a cross-sectional view taken along EF and GH of Fig. 15A. Fig. 16A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to the sixteenth embodiment, and Fig. 16B is a cross-sectional view taken along EF and GH of Fig. 16A. Fig. 17A is a plan view for explaining the configuration of an FFS-type liquid crystal display device according to the seventeenth embodiment, and Fig. 15B is a cross-sectional view EF, GH, and IJ of Fig. 15A. Fig. 18A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to an eighteenth embodiment, and Fig. 18B is a cross-sectional view taken along EF and GH of Fig. 18A. Fig. 19A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a nineteenth embodiment; Fig. 20A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a twentieth embodiment, and Fig. 20B is an MN cross-sectional view and an OP cross-sectional view of Fig. 20A. Fig. 21A is a cross-sectional view for explaining the configuration of an FFS type liquid crystal display device according to the twenty-first embodiment, and Fig. 21B is a cross-sectional view for explaining the structure of the FFS system liquid crystal display device according to the twenty-second embodiment. Fig. 22 is a cross-sectional view for explaining the configuration of an FFS type liquid crystal display device according to a twenty-third embodiment; Fig. 23 is a cross-sectional view for explaining the configuration of a liquid crystal display device according to a twenty-fourth embodiment; 24A is a plan view of the liquid crystal display shown in FIG. 23, and FIG. 24B is an enlarged view of the pixel portion of FIG. 24A. Fig. 25A is a plan view of a liquid crystal display device according to a twenty-fifth embodiment, and Fig. 25B is an enlarged view of the pixel portion of Fig. 25A. Fig. 26 is a cross-sectional view for explaining the configuration of a liquid crystal display device according to a twenty-sixth embodiment; Fig. 27 is a plan view for explaining the shape of an electrode of a liquid crystal display device in the FFS system according to the 27th embodiment; Fig. 28 is a plan view for explaining the shape of an electrode of an IPS system liquid crystal display device according to a twenty-eighth embodiment; Fig. 29 is a circuit diagram for explaining a circuit configuration of a liquid crystal display device according to a twenty-ninth embodiment; Fig. 30 is a circuit diagram for explaining a circuit configuration of a liquid crystal display device according to a thirtieth embodiment; 31A to 31E are cross-sectional views showing a method of manufacturing a liquid crystal module according to a thirty-first embodiment; 32A to 32D are cross-sectional views showing a method of manufacturing a liquid crystal module according to a thirty-first embodiment; Fig. 33A is a plan view of a liquid crystal module according to a thirty-first embodiment, and Fig. 33B is a cross-sectional view taken along line KL of Fig. 33A. Fig. 34 is a view for explaining a liquid crystal display module according to a thirty-second embodiment; Fig. 35 is a view for explaining a liquid crystal display module according to a thirty-second embodiment; 36A to 36H are perspective views showing an electronic device according to a thirty-third embodiment; Fig. 37 is a sectional view for explaining the basic configuration of the first embodiment; 38A to 38B are cross-sectional views for explaining the configuration of a light emitting device according to a thirty-fourth embodiment;

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings. However, it will be readily understood by those skilled in the art that the present invention may be embodied in many different forms, and that the form and details of the present invention may be variously modified without departing from the spirit and scope of the present invention. Accordingly, the present invention should not be construed as being limited to the description of the following embodiments.

(Embodiment 1)

Fig. 37 is a cross-sectional view for explaining the basic configuration of the present invention. A first electrode 3701 is formed on the substrate 3700 . The substrate 3700 is a glass substrate, a quartz substrate, a substrate formed of an insulating material such as alumina, a plastic substrate, a silicon substrate, or a metal substrate having heat resistance capable of withstanding the processing temperature of a subsequent process. When operating as a transmissive display device, it is preferable that the substrate 3700 has light transmissivity.

The first electrode 3701 is formed using a conductive film (eg, ITO: indium tin oxide) that transmits visible light.

An insulating film 3704 is formed over the substrate 3700 and the first electrode 3701 . The insulating film 3704 is made of, for example, an insulating material containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy: x &gt; y), or silicon oxynitride (SiNxOy: x &gt; y). It is constituted, and any single layer structure of these films may be used, and a laminate structure in which a plurality of these films are laminated may be used. By forming the insulating film 3704 , diffusion of impurities from the substrate 3700 to the upper layer of the insulating film 3704 can be prevented.

Further, between the substrate 3700 and the insulating film 3704, a gate electrode, a gate wiring, a gate insulating film, or the like may be further disposed. Among these, for example, the gate electrode and the gate wiring may be formed in the same process as that of the first electrode 3701 .

On the insulating film 3704 , a thin film transistor 3703 is formed. The thin film transistor 3703 may be either a top gate type or a bottom gate type. The thin film transistor 3703 is disposed in the vicinity of the first electrode 3701 or the second electrode 3702 .

An interlayer insulating film 3705 is formed over the thin film transistor 3703 and the insulating film 3704 . The interlayer insulating film 3705 may have a single layer or a multilayer structure.

As the material constituting the interlayer insulating film 3705, an inorganic material or an organic material can be used. As the organic material, polyimide, acryl, polyamide, polyimideamide, resist, siloxane, polysilazane or the like can be used. As the inorganic material, an insulating material containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy: x&gt;y), or silicon oxynitride (SiNxOy: x&gt;y), can be used. Moreover, a laminated|multilayer film which laminated|stacked two or more of these films|membranes may be sufficient. Further, a laminated film may be formed by combining an organic material and an inorganic material.

When an inorganic material is used as the interlayer insulating film 3705, penetration of moisture or impurities can be prevented. In particular, when a layer containing nitrogen is used, the function of blocking moisture and impurities is high. In addition, when an organic material is used as the interlayer insulating film 3705, the surface can be made flat. Therefore, for the layer above it, a good effect can be brought about. For example, since the layer to be formed on the organic material can also be flattened, it is possible to prevent disorder of the alignment of liquid crystals, to prevent breakage of wiring, or to accurately form a resist.

On the interlayer insulating film 3705, a second electrode 3702 is formed. The second electrode 3702 is preferably made of a material having high light transmittance. For example, one or more elements selected from the group consisting of indium (In), tin (Sn), and oxygen (O), or a compound or alloy material (for example, For example, indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin oxide (ITSO) to which silicon oxide is added) is preferable. In particular, since IZO is easy to process and it is easy to form finely in an accurate shape, it is preferable. However, it is not limited to this.

Either one of the first electrode 3701 and the second electrode 3702 functions as an electrode to which a different signal is supplied for each pixel in response to an image signal, that is, a so-called pixel electrode, and serves as a source of the thin film transistor 3703 or It is electrically connected to the drain. In addition, the remaining one of the first electrode 3701 and the second electrode 3702 functions as a common electrode.

An opening pattern (slit) is formed in the second electrode 3702 . In addition, this opening pattern generates an electric field between the first electrode 3701 and the second electrode 3702 in a direction substantially parallel to the substrate. If it is possible to generate an electric field including a direction approximately parallel to the substrate, the opening pattern can be formed in various shapes. Here, the meaning of substantially parallel refers to a parallel case including some differences. Therefore, it may deviate from a parallel direction in the range which does not interfere with display. For example, a case with a difference of ±10°, more preferably ±5° or so is included.

Therefore, in the above-described opening pattern, not only a closed opening pattern such as a slit, but also a space between the comb teeth in the comb-shaped electrode, for example, is located between the conductor patterns, and the conductor pattern is formed. Includes unoccupied spaces. That is, it is sufficient that there is a gap or a gap between the electrode and the electrode.

In this way, an electric field is generated between the second electrode 3702 and the first electrode 3701, and the alignment state of the liquid crystal molecules can be controlled.

As described above, in the present embodiment, the insulating film 3704 is positioned between the first electrode 3701 and the thin film transistor 3703 . Accordingly, by adjusting the thickness of the insulating film 3704, the degree of freedom of the distance between the first electrode 3701 and the second electrode 3702 is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode, the arrangement interval of the opening pattern, and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. The width and spacing can also be set freely. Then, it becomes possible to control the gradient of the electric field applied between the electrodes, and for example, it is possible to easily increase the electric field in the direction parallel to the substrate. That is, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called horizontal orientation) can be controlled in a direction parallel to the substrate. all.

Further, even if the thickness of the insulating film 3704 is changed, the operation of the transistor is not affected, so the thickness can be freely controlled. Therefore, the gap between the first electrode 3701 and the second electrode 3702 can be increased.

In addition, although only the 2nd electrode 3702 has an opening pattern in FIG. 37, the 1st electrode 3701 may also have an opening pattern. Accordingly, it is possible to generate an electric field substantially parallel to the substrate and control the liquid crystal molecules.

In addition, if the first electrode 3701 is present, the amount of light transmission decreases unless the transmittance is 100%. On the other hand, if the first electrode 3701 has an aperture pattern, light is not attenuated in the portion of the aperture pattern, so that the total amount of light transmission increases. As a result, luminance can be improved or power consumption can be reduced.

(Embodiment 2)

1A is a plan view for explaining the configuration of a liquid crystal display device according to a second embodiment of the present invention. A pixel for one pixel is shown. This liquid crystal display device is a device for controlling the alignment direction of liquid crystals by the FFS method. In Fig. 1A, a plurality of source wirings 108 are arranged parallel to each other (extending in the longitudinal direction in the drawing) and spaced apart from each other. The plurality of gate wirings 105 extend in a direction substantially perpendicular to the source wiring 108 (horizontal direction in the drawing) and are arranged so as to be spaced apart from each other. The auxiliary wiring 106 is disposed at a position adjacent to each of the plurality of gate wirings 105, and is substantially parallel to the gate wiring 105, that is, in a direction approximately perpendicular to the source wiring 108 (in the drawing). to the left and right). A substantially rectangular space is surrounded by the source wiring 108, the auxiliary wiring 106, and the gate wiring 105, and pixel electrodes of the liquid crystal display device are arranged in this space. The thin film transistor 121 for driving the pixel electrode is disposed in the upper left corner in the drawing. A plurality of pixel electrodes and thin film transistors are arranged in a matrix shape.

In addition, the gate wiring 105 , the auxiliary wiring 106 , and the source wiring 108 are formed of aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), and neodymium (Nd). ), chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag), copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc (Zn) ), niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As), gallium (Ga), indium (In), tin (Sn), and oxygen (O) or a plurality of elements, and a compound or alloy material containing one or more elements selected from the group as a component (eg, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin to which silicon oxide is added) oxide (ITSO), zinc oxide (ZnO), aluminum neodymium (Al-Nd), magnesium silver (Mg-Ag, etc.) Alternatively, a compound (silicide) of the above material and silicon (eg, aluminum silicon, molybdenum silicon, nickel silicide, etc.), or a compound of the above material and nitrogen (eg, titanium nitride, tantalum nitride, molybdenum nitride, etc.) formed with Further, silicon (Si) may contain a large amount of n-type impurities (such as phosphorus) or p-type impurities (such as boron). By containing these impurities, the electrical conductivity is improved, and since it behaves in a manner similar to that of an ordinary conductor, it can be easily used as a wiring or an electrode. In addition, a single crystal may be sufficient as a silicon, polycrystalline (polysilicon) may be sufficient as it, and amorphous (amorphous silicon) may be sufficient as it. If single crystal silicon or polycrystalline silicon is used, the resistance can be reduced. If amorphous silicon is used, it can be manufactured by a simple manufacturing process. In addition, since aluminum and silver have high electrical conductivity, signal delay can be reduced, and since they are easy to etch, they are easy to process and can be micromachined. In addition, since copper has a high conductivity, signal delay can be reduced. In addition, molybdenum is preferable because it can be manufactured without causing problems such as defects in the material even in contact with an oxide semiconductor such as ITO or IZO and silicon, can be easily processed and etched, and has high heat resistance. do. Further, titanium is preferable because it can be produced without causing problems such as defects in the material even when in contact with an oxide semiconductor such as ITO or IZO and silicon, and at the same time has high heat resistance. Moreover, since tungsten has high heat resistance, it is preferable. In particular, an alloy of neodymium and aluminum is preferable because heat resistance is improved and aluminum has almost no hillock. Moreover, silicon can be formed simultaneously with the semiconductor film which a transistor has, and since heat resistance is high, it is preferable. In addition, indium tin oxide (ITO), indium zinc oxide (IZO), silicon oxide-doped indium tin oxide (ITSO), zinc oxide (ZnO), and silicon (Si) have light-transmitting properties, so a portion that transmits light It can be used for, preferably. For example, such materials may be used as a pixel electrode or a common electrode.

In addition, these may form wiring or an electrode in a single layer, and may become a single layer structure. By forming the single-layer structure, the manufacturing process can be simplified, the number of process days can be reduced, and the cost can be reduced. In addition, by using the multilayer structure, the advantages of each material can be exhibited, the disadvantages can be reduced, and a wiring or electrode with good performance can be formed. For example, when a multilayer structure containing a low-resistance material (eg, aluminum, etc.) is formed, it is possible to reduce the resistance of the wiring. In addition, when a material having high heat resistance is included, for example, a material having a material having low heat resistance but having other advantages is sandwiched with a material having high heat resistance in a laminated structure, so that the wiring and electrode as a whole have heat resistance. can increase For example, it is preferable to form a laminated structure in which a layer containing aluminum is sandwiched between layers containing molybdenum or titanium. In addition, when there is a portion in direct contact with wirings, electrodes, or the like made of different materials, there is a case where they adversely affect each other. For example, there is a problem that one material is mixed with another, the properties of the material change, the original purpose cannot be achieved, or a problem arises during manufacturing, so that normal manufacturing cannot be performed. In such a case, the problem can be solved by sandwiching or covering a certain layer between other layers. For example, when indium tin oxide (ITO) and aluminum are brought into contact, it is preferable to sandwich titanium or molybdenum therebetween. Further, when making silicon and aluminum come into contact, it is preferable to sandwich titanium or molybdenum therebetween.

In addition, it is preferable to use a material having higher heat resistance than that of the source wiring 108 for the gate wiring 105 . This is because, in many cases, the gate wiring 105 is disposed at a high temperature during the manufacturing process.

In addition, it is preferable to use a material having a lower resistance than that of the gate wiring 105 for the source wiring 108 . This is because, while only a binary signal of an H signal and an L signal is applied to the gate wiring 105, an analog signal is supplied to the source wiring 108, which contributes to display. Therefore, in order to be able to supply a signal of an accurate magnitude to the source wiring 108, it is preferable to use a material having a low resistance.

In addition, although it is not necessary to form the auxiliary wiring 106, by forming the auxiliary wiring 106, the potential of the common electrode in each pixel can be stabilized. 1A to 1B, the auxiliary wiring 106 is disposed substantially parallel to the gate line, but is not limited thereto. It may be arranged substantially parallel to the source wiring 108 . In that case, it is preferable to be formed of the same material as the source wiring 108 .

However, when the auxiliary wiring 106 is arranged substantially parallel to the gate line, the aperture ratio can be increased and the auxiliary wiring 106 can be efficiently laid out, so it is preferable.

Fig. 1B is a cross-sectional view EF and GH of Fig. 1A. 1B and 1A , on a part of the substrate 100 , the first electrode 101 for controlling the alignment direction of the liquid crystal is disposed. However, another layer may be disposed between the substrate 100 and the first electrode 101 .

The substrate 100 is a glass substrate, a quartz substrate, a substrate formed of an insulating material such as alumina, a plastic substrate, a silicon substrate, or a metal substrate having heat resistance that can withstand the processing temperature of the post process. Moreover, polysilicon may be sufficient.

In addition, when operating as a transmissive display device, it is preferable that the substrate 100 has light transmissivity.

The first electrode 101 is a light-transmitting conductive film (for example, an ITO (indium tin oxide) film, an IZO (indium zinc oxide) film, a ZnO film, or a polysilicon film or amorphous silicon doped with impurities. film) and functions as a common electrode. Moreover, as shown in FIG. 1A, the 1st electrode 101 is connected up and down. By connecting in this way, the resistance of the common electrode can be lowered and a predetermined voltage can be easily applied.

An insulating film 102 is formed on the first electrode 101 and on the substrate 100 . The insulating film 102 is a film that prevents impurities from diffusing from the substrate 100 , and functions as a base film. The insulating film 102 is made of, for example, an insulating material containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy: x &gt; y), or silicon oxynitride (SiNxOy: x &gt; y). is formed Moreover, a laminated|multilayer film which laminated|stacked two or more of these films|membranes may be sufficient. An insulating film having the same function as the insulating film 102 may be provided between the substrate 100 and the first electrode 101 .

On the insulating film 102 , a semiconductor film 103 is formed. In the semiconductor film 103 , an impurity region 103a serving as a source and an impurity region 103b serving as a drain of the thin film transistor 121 are formed. The impurity regions 103a and 103b are, for example, n-type impurity regions, but may be p-type impurity regions. Impurities imparting n-type include, for example, phosphorus (P) and arsenic (As), and impurities imparting p-type include, for example, boron (B) and gallium (Ga).

As shown by the dotted line in FIG. 1A , the first electrode 101 is formed by breaking one corner of the rectangle (the upper left corner in the drawing), and is formed on the substantially entire surface of the pixel. In addition, by arranging the thin film transistor 121 in the portion 101d where the rectangular corner is broken, an area effective for display in the pixel can be formed more efficiently. That is, the aperture ratio improves. The semiconductor film 103 is, for example, a polysilicon film, but may be another semiconductor film (for example, an amorphous silicon film, a single crystal silicon film, an organic semiconductor film, or a carbon nanotube).

A gate insulating film 104 of the thin film transistor 121 is formed to cover the semiconductor film 103 .

However, the gate insulating film 104 may be disposed only in the vicinity of the channel formation region, and may not be disposed in other portions. In addition, depending on the place, the thickness and the laminated structure may be different. For example, there are cases where only the channel vicinity is thick or the number of layers is large, and the film thickness is thin or the number of layers is small in other places. By doing in this way, it becomes easy to control the addition of impurities to the source region and the drain region. In addition, by changing the thickness or the number of layers of the gate insulating film 104 in the vicinity of the channel, the amount of impurities added to the semiconductor film varies depending on the location, so that the LDD region can be formed. By forming the LDD region, it is possible to reduce leakage current and suppress the generation of hot carriers, thereby improving reliability.

The gate insulating film 104 is, for example, an insulating material containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy: x&gt;y), or silicon oxynitride (SiNxOy: x&gt;y). is formed with Moreover, a laminated|multilayer film which laminated|stacked two or more of these films|membranes may be sufficient. On the gate insulating film 104 , gate electrodes 105a and 105b positioned above the semiconductor film 103 are formed. 1B and 1A , the gate electrodes 105a and 105b are the same wiring layer as the auxiliary wiring 106 and the gate wiring 105 , and are electrically connected to the gate wiring 105 . The semiconductor film 103 positioned below each of the gate electrodes 105a and 105b also functions as a channel region 103c. Also, the same impurities as the impurity regions 103a and 103b are introduced into the semiconductor film 103 in which the two channel regions 103c are mutually located. In addition, in this embodiment, although it was set as the multi-gate structure which has two gate electrodes, this invention is not limited to this structure.

A first interlayer insulating film 107 is formed over the gate insulating film 104 and the gate electrodes 105a and 105b. For the first interlayer insulating film 107, an inorganic material or an organic material can be used. As the organic material, polyimide, acryl, polyamide, polyimideamide, resist, siloxane, polysilazane or the like can be used. As the inorganic material, an insulating material containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy: x&gt;y), silicon nitroxide (SiNxOy: x&gt;y), can be used. Moreover, a laminated|multilayer film which laminated|stacked two or more of these films|membranes may be sufficient. Further, a laminated film may be formed by combining an organic material and an inorganic material. In the insulating film 102 , the gate insulating film 104 , and the first interlayer insulating film 107 , a connection hole positioned over the impurity region 103a , a connection hole positioned over the impurity region 103b , and a first electrode 101 over A connection hole located on the connection hole and a connection hole located on the auxiliary wiring 106 are formed. On the first interlayer insulating film 107 , a source wiring 108 , a conductive film 109 for connection, and a conductive film 110 for connection are formed.

In addition, by using an inorganic material as the insulating film, penetration of moisture or impurities can be prevented. In particular, when a layer containing nitrogen is used, the function of blocking moisture and impurities is high.

Moreover, the surface can be made flat by using an organic material as an insulating film. Therefore, for the layer above it, a good effect can be given. For example, since the layer to be formed on the organic material can also be made flat, disorder in the alignment of the liquid crystal can be prevented.

The source wiring 108 is located above the impurity region 103a, and is electrically connected to the impurity region 103a by partially filling the connection hole. Therefore, the source electrode exists as a part of the source wiring 108 . The conductive film 109 for connection is electrically connected to the impurity region 103b by partially filling the connection hole. In this way, by disposing the conductive film 109 for connection, it is not necessary to open the connection hole deeply, so that it can be formed accurately.

However, as shown in Fig. 2B, the second electrode 112 and the impurity region 103b may be directly connected without interposing the conductive film 109 for connection shown in Fig. 1B. In this case, the connection hole for connecting the second electrode 112 and the impurity region 103b needs to be opened deeply, but since the conductive film 109 for connection is unnecessary, the region is used as an opening region in the image. used for display Therefore, the aperture ratio can be improved, and power consumption can be reduced.

The conductive film 110 for connection is located above the auxiliary wiring 106 , and is electrically connected to each of the auxiliary wiring 106 and the first electrode 101 by partially filling the connection hole. In this way, the first electrode 101 is electrically connected to the auxiliary wiring 106 via the conductive film 110 for connection. In addition, a plurality of conductive films 110 for connection may be formed. In this way, the potential of the first electrode 101 is stabilized. In addition, by connecting the first electrode 101 and the auxiliary wiring 106 via the conductive film 110 for connection, the number of openings of the connection hole can be reduced, so that the process can be simplified.

In addition, although the conductive film 110 for connection was formed using the same material as the source wiring 108, it is not limited to this. Simultaneously with the second electrode 112, it may be formed using the same material.

A second interlayer insulating film 111 is formed over the source wiring 108 , the connecting conductive film 109 , the connecting conductive film 110 , and the first interlayer insulating film 107 . It is also possible to have a configuration in which the second interlayer insulating film 111 is not formed. For the second interlayer insulating film 111, an inorganic material or an organic material can be used. As the organic material, polyimide, acryl, polyamide, polyimideamide, resist, siloxane, polysilazane or the like can be used. As the inorganic material, an insulating material containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy: x &gt; y), silicon nitroxide (SiNxOy: x &gt; y), can be used. Moreover, a laminated|multilayer film which laminated|stacked two or more of these films|membranes may be sufficient. Further, a laminated film may be formed by combining an organic material and an inorganic material. In the second interlayer insulating film 111 , a connection hole positioned over the conductive film 109 for connection is formed.

A second electrode 112 for controlling the alignment direction of liquid crystal is formed on the second interlayer insulating film 111 . The second electrode 112 functions as a pixel electrode to which an individual voltage is supplied to each pixel, and a target in which ITO (indium tin oxide), ZnO (zinc oxide), and indium oxide is mixed with 2 to 20 wt% ZnO is used. It is composed of IZO (indium zinc oxide) formed by A part of the second electrode 112 is located above the conductive film 109 for connection, and a part of the second electrode 112 is embedded in the connection hole to electrically connect to the conductive film 109 for connection. In this way, the second electrode 112 is directly connected to the impurity region 103b of the thin film transistor 121 via the conductive film 109 for connection.

2A to 2B , when the conductive film 109 for connection is not present, the second electrode 112 is directly connected to the impurity region 103b of the thin film transistor 121 .

2A to 2B and FIG. 1A , the second electrode 112 has a substantially rectangular shape, is located above the first electrode 101, and has a plurality of opening patterns 112a and 112b. Examples of the opening patterns 112a and 112b include many parallel to each other in a slit shape. In the example shown in this figure, although the direction of the opening patterns 112a and 112b is oblique to the source wiring 108, the opening pattern 112a located in the upper half of the drawing and the opening pattern located in the lower half of the drawing of the pixel The directions of (112b) are different. When the opening patterns 112a and 112b are formed, an electric field having a component parallel to the substrate is generated between the first electrode 101 and the second electrode 112 above the second electrode 112 . Accordingly, by controlling the potential of the second electrode 112, the alignment direction of the liquid crystal, which will be described later, can be controlled.

In addition, by arranging the opening patterns 112a and 112b in different directions, a plurality of regions in which the liquid crystal molecules operate in different directions can be formed. That is, it can be set as a multi-domain structure. By setting it as a multi-domain structure, when it sees from a certain direction, it can prevent that the display of an image is not accurate, As a result, a viewing angle can be improved.

In addition, the shape of an opening pattern is not limited to the shape of this embodiment. The shape of the opening pattern described after 3rd Embodiment is also applicable. That is, the opening pattern includes, for example, a space in which the conductor pattern is not formed, such as a space between the comb-tooth portions in the comb-toothed electrode.

Also, as shown in FIG. 1A , when viewed from a direction perpendicular to the substrate 100 , the first electrode 101 serving as the common electrode is located outside the second electrode 112 serving as the pixel electrode. comes out empty In this way, after receiving the signal, the second electrode 112 in the floating state is suppressed from being affected by the signal transmitted to the other pixel via the source wiring 108 . As a result, image defects such as crosstalk can be reduced. Further, the present invention is not limited to such an electrode structure, and the common electrode may have a portion disposed inside the pixel electrode.

A first alignment layer 113 and a liquid crystal 114 are stacked on the second interlayer insulating layer 111 and on the second electrode 112 . As the liquid crystal 114, a ferroelectric liquid crystal (FLC), a nematic liquid crystal, a smectic liquid crystal, a liquid crystal having a horizontal orientation, a liquid crystal having a vertical orientation, or the like can be used. The counter substrate 120 is disposed on the liquid crystal 114 with the second alignment layer 115 and the color filter 116 interposed therebetween. In addition, polarizing plates 118 and 119 are formed on each of the substrate 100 and the counter substrate 120 .

In addition to the polarizing plate, a retardation plate, a λ/4 plate, or the like is disposed in many cases.

Further, in the above configuration, a capacitance is formed by the portions of the first electrode 101 and the second electrode 112 where the opening pattern is not formed, and each insulating film positioned between them. By forming this capacity|capacitance, a holding capacity|capacitance becomes large.

Next, an example of the manufacturing method of the semiconductor device and liquid crystal display device of this invention is demonstrated. First, a light-transmitting conductive film (eg, ITO (indium tin oxide) film, IZO film, ZnO film, or Si film) is formed on the substrate 100 . Next, a photoresist film (not shown) is formed on the conductive film, and the photoresist film is exposed and developed. Accordingly, a resist pattern is formed on the conductive film. Next, the conductive film is etched using this resist pattern as a mask. Accordingly, the conductive film is selectively removed, and the first electrode 101 is formed on the substrate 100 . After that, the resist pattern is removed.

Next, an insulating film 102 is formed on the substrate 100 and on the first electrode 101 . The insulating film 102 is preferably formed to be thicker than the gate insulating film 104, which will be described later. Next, a semiconductor film (for example, a polysilicon film) is formed over the insulating film 102, and the semiconductor film is selectively removed by etching using a resist pattern. Accordingly, an island-shaped semiconductor film 103 is formed on the insulating film 102 .

Next, a gate insulating film 104 is formed on the semiconductor film 103 and on the insulating film 102 . The gate insulating film 104 is, for example, a silicon oxynitride film or a silicon oxide film, and is formed by plasma CVD. Note that the gate insulating film 104 may be formed of a silicon nitride film or a multilayer film including silicon nitride and silicon oxide. Next, a conductive film is formed over the gate insulating film 104, and the conductive film is selectively removed by etching using a resist pattern as a mask. Accordingly, gate electrodes 105a and 105b are formed on the gate insulating film 104 positioned over the semiconductor film 103 . In addition, by this process, the gate wiring 105 and the auxiliary wiring 106 are formed.

In addition, by forming the auxiliary wiring 106 as described above, the potential of the first electrode 101 in each pixel can be stabilized. In addition, the auxiliary wiring 106 may not be formed. Further, the auxiliary wiring 106 is formed on a different layer (for example, the same layer as the source wiring 108, the same layer as the first electrode 101, or the same layer as the second electrode 112). Alternatively, it may be divided into a plurality of layers and formed. 1B, the auxiliary wiring 106 extends in a direction orthogonal to the source wiring 108, but may be configured to extend in the same direction as the source wiring 108. As shown in FIG.

In addition, the conductive film is aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium (Cr), nickel (Ni), platinum (Pt), Gold (Au), silver (Ag), copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc (Zn), niobium (Nb), silicon (Si), phosphorus (P), one or more elements selected from the group consisting of boron (B), arsenic (As), gallium (Ga), indium (In), tin (Sn), and oxygen (O), and one or more elements selected from the group Compounds or alloying materials containing elements of Al-Nd), magnesium-silver (Mg-Ag), etc.), and a substance obtained by combining these compounds. Alternatively, a compound (silicide) of the above material and silicon (eg, aluminum silicon, molybdenum silicon, nickel silicide, etc.), or a compound of the above material and nitrogen (eg, titanium nitride, tantalum nitride, molybdenum nitride, etc.) formed with In addition, silicon (Si) may contain a large amount of n-type impurities (such as phosphorus) or p-type impurities (such as boron).

Moreover, these may form wiring and an electrode by a single layer, and may become a multilayer structure. By forming the single-layer structure, the manufacturing process can be simplified, the number of process days can be reduced, and the cost can be reduced. In addition, by using the multilayer structure, the advantages of each material can be exhibited, the disadvantages can be reduced, and wiring or electrodes with good performance can be formed. For example, when a multilayer structure containing a low-resistance material (eg, aluminum, etc.) is formed, the resistance of the wiring can be reduced. In addition, if a material with high heat resistance is included, for example, a material having a material having low heat resistance but having other advantages is interposed with a material with high heat resistance in a laminated structure to improve heat resistance as a whole for wiring and electrodes. can be raised For example, it is preferable to form a laminated structure in which a layer containing aluminum is sandwiched between layers containing molybdenum or titanium. Moreover, when there is a part in direct contact with wiring, an electrode, etc. made of another material, mutual influence may be exerted. For example, when one material is mixed with another material, the properties of the material are changed, the original purpose cannot be achieved, there is a problem in manufacturing, and there is a problem that the product cannot be manufactured normally. In such a case, the problem can be solved by sandwiching or covering one layer between other layers. For example, when indium tin oxide (ITO) and aluminum are brought into contact, it is preferable to sandwich titanium or molybdenum therebetween. Further, when making silicon and aluminum come into contact, it is preferable to sandwich titanium or molybdenum therebetween.

Next, impurities are implanted into the semiconductor film 103 using the gate electrodes 105a and 105b as masks. Accordingly, impurity regions 103a and 103b and impurity regions positioned between the gate electrodes 105a and 105b are formed in the semiconductor film 103 . Further, the n-type and p-type impurity elements may be implanted separately, or the n-type impurity element and the p-type impurity element may be implanted together into a specific region. However, in the latter case, the implantation amount of either the n-type impurity element or the p-type impurity element is increased. Moreover, in this process, you may use a resist pattern as a mask.

In addition, at this time, the LDD region may be formed by changing the thickness or the laminated structure of the gate insulating film 104 . In the portion where the LDD region is to be formed, the gate insulating film 104 may be formed thickly or the number of layers may be increased. As a result, since the implantation amount of impurities is reduced, the LDD region can be easily formed.

In the case of implanting impurities into the semiconductor film 103 , it may be carried out before the gate electrodes 105a and 105b are formed, for example, before or after the gate insulating film 104 is formed. In that case, it is formed using a resist pattern as a mask. Therefore, a capacitor can be formed between the electrode of the same layer as the gate and the semiconductor film into which the impurity is implanted. Since the gate insulating film is disposed between the electrode on the same layer as the gate and the semiconductor film into which the impurity is implanted, the film thickness is thin and a large capacitance can be formed.

Next, the first interlayer insulating film 107 and each connection hole are formed. Next, a conductive film (for example, a metal film) is formed over the first interlayer insulating film 107 and in each connection hole, and the conductive film is selectively removed by etching using a resist pattern. Accordingly, the source wiring 108, the conductive film 109 for connection, and the conductive film 110 for connection are formed.

Next, the second interlayer insulating film 111 and each connection hole are formed. Next, a light-transmitting conductive film (for example, an ITO film, an IZO film, a ZnO film, or a Si film) is formed on the second interlayer insulating film 111 and in each connection hole, and the conductive film is applied to a resist pattern It is selectively removed by etching using Accordingly, the second electrode 112 is formed.

In addition, the position of the connection hole in which a part of the conductive film 109 for connection is buried and the connection hole in which a part of the second electrode 112 is buried are different from each other. By doing in this way, even if the portion of the conductive film 109 for connection and the second electrode 112 positioned above the connection hole is dented, the dent does not overlap. Accordingly, a deep depression is not formed in the second electrode 112 , and it is possible to suppress the occurrence of defects in the resist pattern described above. After that, the resist pattern is removed.

Next, the first alignment layer 113 is formed, and the liquid crystal 114 is sealed between the counter substrate 120 on which the second alignment layer 115 is formed. Thereafter, on the opposite substrate 120 or the substrate 100 on the side not in contact with the liquid crystal 114, optical films such as polarizing plates 118 and 119, retardation plates (not shown), and λ/4 plates (shown) not), an optical film such as a diffusion plate or a prism sheet is formed. In addition, a backlight or a front light is formed. As the backlight, a direct type or a side light type can be used. As a light source, a cold cathode tube or LED (light emitting diode) can be used. As the LED, a combination of a white LED or an LED for each color (for example, white, red, blue, green, indigo, magenta) may be used in combination. When LED is used, since the peak of the wavelength of light is sharp, color purity can be increased. In the case of the side light type, a light guide plate is disposed to realize a uniform surface light source. In this way, a liquid crystal display device is formed.

In addition, the liquid crystal display device may call a board|substrate, a counter board|substrate, and only the part of the liquid crystal pinched|interposed therein. In addition, the liquid crystal display device may include a thing in which an optical film such as a polarizing plate or a retardation plate is disposed. .

As described above, according to the second embodiment of the present invention, in the liquid crystal display device for controlling the alignment direction of liquid crystal in the FFS method, the first electrode 101 is placed on the substrate 100 , that is, under the insulating film 102 . are placed Accordingly, compared to a case in which the first electrode 101 is disposed on the second electrode 102 , the distance between the first electrode 101 and the second electrode 112 may be increased. Accordingly, the degree of freedom of the interval between the first electrode 101 and the second electrode 112 is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. have. Further, it is possible to control the gradient of the electric field applied between the electrodes, for example, it is possible to easily increase the electric field in the direction parallel to the substrate. That is, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called horizontal orientation) can be controlled in a direction parallel to the substrate. all.

In addition, even if the thickness of the insulating film 102 is changed, since the operation of the transistor is not affected, the thickness can be freely controlled. Accordingly, the gap between the first electrode 101 and the second electrode 112 can be freely increased.

In addition, by making the insulating film 102 thick, even if the gate insulating film 104 is thin, the gap between the first electrode 101 and the second electrode 112 is widened, and an appropriate electric field can be applied to the liquid crystal 114 . have. When the gate insulating film 104 is made thin, the current driving ability of the thin film transistor 121 can be improved, and the gate capacitance can be improved.

In addition, the gate electrode 105a and the gate wiring 105 may be formed in different layers, and may be formed of different materials.

Further, the conductive film 109 for connection is disposed on the same layer as the source wiring 108 , but a different wiring layer (eg, the gate wiring 105 , the first electrode 101 , or the second electrode 112 ). ) and on the same layer). Note that the gate insulating film 104 may not be formed over the entire surface.

Further, the connection hole in which a part of the second electrode 112 is embedded may be formed at a position overlapping the connection hole in which the conductive film 109 for connection is partially embedded. In this case, since it can be put in one place, it can be efficiently laid out. Accordingly, the aperture ratio of the pixel can be improved.

Further, in the present embodiment, a so-called top gate type thin film transistor in which a gate electrode is disposed above the channel region has been described, but the present invention is not particularly limited to this. A so-called bottom-gate thin film transistor in which a gate electrode is disposed below the channel region may be employed, or a transistor having a structure in which gate electrodes are disposed above and below the channel region may be formed.

In addition, the liquid crystal display device of a transmissive type may be sufficient as a liquid crystal display device, and the liquid crystal display device of a transflective type or a reflection type may be sufficient as it. In a semi-transmissive liquid crystal display device, for example, the first electrode 101 is formed of a light-transmitting film (eg, ITO (indium tin oxide) film, IZO (indium zinc oxide) film, ZnO film, or impurities). This can be realized by forming the introduced polysilicon film or an amorphous silicon film) and forming the second electrode 112 with a metal film. In addition, even if the second electrode 112 is formed of a light-transmitting film, a part of the first electrode 101 is formed of a metal film, and the rest is formed of a light-transmitting film, a semi-transmissive liquid crystal display can be realized. have. In addition, in a reflective liquid crystal display device, by forming the first electrode 101 as a metal film, the first electrode 101 can function as a reflective plate. In addition, an insulating film (for example, a silicon oxide film) may be formed between the substrate 100 and the first electrode 101, and a metal film as a reflective film may be formed in the insulating film. In addition, a reflective sheet (for example, an aluminum film) as a reflective film can be formed on the outer surface of the substrate 100 . In addition, the content demonstrated here is similarly applicable also to each embodiment mentioned later.

(Embodiment 3)

3A is a plan view for explaining the configuration of a liquid crystal display device according to a third embodiment. Fig. 3B is a cross-sectional view EF and GH of Fig. 3A. In this embodiment, the first electrode 101 is electrically connected to the impurity region 103b of the thin film transistor 121 and functions as a pixel electrode, and the second electrode 112 is an auxiliary wiring 106 . a point electrically connected to and functioning as a common electrode, a point at which the second electrode 112 protrudes outside the first electrode 101 when viewed from a direction perpendicular to the substrate 100, and , except for the connection structure of the first electrode 101 and the second electrode 112 and each wiring, the configuration is substantially the same as that of the second embodiment. In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 2nd Embodiment. Accordingly, the contents described in the second embodiment are also applicable to the present embodiment. Hereinafter, about the same component as 2nd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

In the present embodiment, in the first interlayer insulating film 107 , the gate insulating film 104 , and the insulating film 102 , a connection hole positioned over the first electrode 101 is formed, and the first interlayer insulating film 107 . and in the gate insulating film 104 , connection holes positioned over the impurity regions 103a and 103b of the thin film transistor 121 are formed. Further, in the first interlayer insulating film 107 , a connection hole positioned over the auxiliary wiring 106 is formed.

The conductive film 109 for connection extends from above the impurity region 103b to above the first electrode 101, and a part of it is buried in the connection hole, so that the impurity region 103b and the first electrode 101 are formed. electrically connected to each. In this way, the first electrode 101 is electrically connected to the impurity region 103b via the conductive film 109 for connection. In addition, the conductive film 110 for connection is electrically connected to the auxiliary wiring 106 by partially filling the connection hole.

Further, the first electrode 101 may be formed with a conductive film for connection formed in the same layer as the second electrode 112 , and electrically connected to the impurity region 103b via the first electrode 101 .

Further, in the second interlayer insulating film 111 , a connection hole positioned on the conductive film 110 for connection is formed. The second electrode 112 is electrically connected to the conductive film 110 for connection by partially filling the connection hole. In this way, the second electrode 112 is electrically connected to the auxiliary wiring 106 via the conductive film 110 for connection. Further, as shown in FIG. 3A , the second electrodes 112 positioned vertically are partially connected to each other.

In addition, the auxiliary wiring 106 and the second electrode 112 may be directly connected without arranging the conductive film 110 for connection.

In addition, in this embodiment, the conductive film for connection 110 and the first electrode 101 are formed above each of the three corners except for the corner close to the thin film transistor among the four corners of the first electrode 101 .

Also in this embodiment, the same effect as that of the second embodiment can be obtained. In addition, in this embodiment, it is not necessary to form the conductive film 110 for a connection. In this case, connection holes positioned over the auxiliary wiring 106 are formed in the first and second interlayer insulating films 107 and 111 . Then, a part of the second electrode 112 is buried in the connection hole, whereby the auxiliary wiring 106 and the second electrode 112 are electrically connected. In this case, the aperture ratio can be improved. However, when the conductive film 110 for connection is formed, even if there is a position difference in the connection holes formed in each of the first and second interlayer insulating films 107 and 111, the position difference is absorbed by the conductive film 110 for connection. can do.

3A to 3B, the first electrode 101 functions as a pixel electrode, the second electrode 112 functions as a common electrode, and the common electrode is disposed closer to the liquid crystal than the pixel electrode. . As a result, even if the voltage of the pixel electrode changes for each pixel, since the voltage of the common electrode is constant, the electric field in the portion where the liquid crystal is present is less affected by the adjacent pixels, and crosstalk can be reduced. For example, depending on the image to be displayed, signals input to adjacent pixels may differ greatly depending on the image to be displayed. have.

In addition, although only one pixel is shown in FIGS. 3A to 3B, in reality, a plurality of pixels are arranged in a matrix shape. In this case, the second electrode 112 of each pixel may be interconnected. By doing in this way, the resistance can be made low so that a voltage can be applied to the second electrode 112 sufficiently.

In addition, this embodiment shows an example at the time of a part change, improvement, or deformation|transformation of the content demonstrated in 2nd Embodiment. Accordingly, the contents described in the second embodiment can be applied to or combined with the present embodiment.

In addition, although the description was made using various drawings, one drawing is established by various components. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component in combination.

(Embodiment 4)

Fig. 4A is a plan view for explaining the configuration of a liquid crystal display device according to a fourth embodiment of the present invention, and Fig. 4B is a cross-sectional view taken along line AB and section CD in Fig. 4A. In the liquid crystal display device according to the present embodiment, the shape of the opening pattern 112c formed on the second electrode 112 is different, and the opening pattern 101a is formed on the first electrode 101, except for the point. , the same configuration as in the third embodiment. That is, the liquid crystal display device according to the present embodiment is a device for controlling the alignment direction of liquid crystal in an IPS system, and when viewed from a direction perpendicular to the liquid crystal display device, the pixel electrode and the common electrode are alternately formed in main portions. , are approximately parallel. In the FFS method, the electrode positioned below the pixel electrode and the common electrode does not have an opening pattern. In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 3rd Embodiment. Accordingly, the contents described in the third embodiment can also be applied to the present embodiment. In addition, since the content described in the second embodiment is applicable also in the third embodiment, it is also applicable to the fourth embodiment. Hereinafter, the same components as those of the third embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.

The opening patterns 112c and 101a extend upward and downward in a zigzag manner in Fig. 4A, respectively. The opening pattern 101a is located below and around the area where the opening pattern 112c is not formed in the second electrode 112 .

In addition, by arranging the opening patterns 112c and 101a having different opening patterns, a plurality of regions in which liquid crystal molecules operate in different directions can be formed. That is, it can be set as a multi-domain structure. By setting it as a multi-domain structure, when it sees from a certain direction, it can prevent that an image display becomes inaccurate, and as a result, a viewing angle can be improved.

Also in this embodiment, the same effect as that of the third embodiment can be obtained. In addition, in this embodiment, the shape of the 2nd electrode 112, the shape of the opening pattern 112c, and the shape of the 1st electrode 101 and the opening pattern 101a are the 2nd in 2nd Embodiment. It is good also as the shape of the 2 electrode 112 and the shape of the opening pattern 112c. However, when viewed from a direction perpendicular to the substrate 100 , the opening patterns 101a and 112c are alternately substantially parallel to each other except for peripheral portions of the first electrode 101 and the second electrode 112 . need to be placed. However, it is not limited to this.

Further, in the liquid crystal display device of the FFS system shown in the second or third embodiment, the shape of the second electrode 112 and the shape of the opening patterns 112a and 112b are the shapes shown in the present embodiment. also good

Further, by overlapping the first electrode 101 and the second electrode 112 or the auxiliary wiring 106, a capacitor can be formed, and it can be used as a storage capacitor.

In addition, this embodiment shows an example at the time of a part change, improvement, or deformation|transformation of the content demonstrated in 2nd Embodiment - 3rd Embodiment. Accordingly, the contents described in the second to third embodiments can be applied or combined in the present embodiment as well.

In addition, although the description was made using various drawings, one drawing is constituted by various components. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

(Embodiment 5)

Fig. 5A is a plan view for explaining the configuration of an IPS system liquid crystal display device according to a fifth embodiment of the present invention. Fig. 5B is a cross-sectional view taken along line AB and a cross-sectional view taken along CD of Fig. 5A. In this embodiment, the first electrode 101 is electrically connected to the auxiliary wiring 106 and functions as a common electrode, and the second electrode 112 is electrically connected to the conductive film 109 for connection. The configuration is the same as that of the fourth embodiment, except for , a point that functions as a pixel electrode, and a connection structure between the first electrode 101 and the second electrode 112 and each wiring. In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is the same structure as 4th Embodiment. In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 4th Embodiment. Hereinafter, about the same structural part as 4th Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the first to fourth embodiments are applicable also to the present embodiment.

In the present embodiment, the conductive film 110 for connection shown in the third embodiment is not formed. Instead, in the gate insulating film 104 and the insulating film 102 , a connection hole positioned over the first electrode 101 is formed. The auxiliary wiring 106 is electrically connected to the first electrode 101 by partially filling the connection hole.

In addition, this connection hole is formed before forming the gate electrodes 105a, 105b.

By arranging in this way, layout can be performed efficiently and the aperture ratio can be improved.

Further, in the second interlayer insulating film 111 , a connection hole located on the conductive film for connection 110 is not formed, but instead a connection hole located on the conductive film 109 for connection is formed. The second electrode 112 is electrically connected to the conductive film 109 for connection by partially filling the connection hole.

In addition, although the 2nd electrode 112 is electrically connected to the conductive film 109 for connection, it is not limited to this. It may be electrically connected to the impurity region 103b without providing the conductive film 109 for connection.

In addition, in this embodiment, the shape of the 2nd electrode 112, the shape of the opening pattern 112c, and the shape of the 1st electrode 101 and the opening pattern 101a are the 2nd in 2nd Embodiment. It is good also as the shape of the 2 electrode 112 and the shape of the opening pattern 112c. However, when viewed from a direction perpendicular to the substrate 100 , the opening patterns 101a and 112c are alternately substantially parallel to each other except for peripheral portions of the first electrode 101 and the second electrode 112 . need to be placed.

In addition, by arranging the opening patterns 112c and 101a having different opening patterns, a plurality of regions in which liquid crystal molecules operate in different directions can be formed. That is, by setting it as a multi-domain structure, when it sees from a certain specific direction, it can prevent that the display of an image is not accurate, As a result, a viewing angle can be improved.

In addition, this embodiment shows an example at the time of a part change, improvement, or deformation|transformation of the content demonstrated by 2nd Embodiment - 4th Embodiment. Accordingly, the contents described in the second to fourth embodiments can be applied to or combined with the present embodiment.

In addition, although the description was made using various drawings, one drawing is established by various components. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

(Embodiment 6)

6A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a sixth embodiment of the present invention. Fig. 6B is a cross-sectional view EF and GH of Fig. 6A. In this embodiment, the point where the source wiring 108 is bent, the point where the first electrode 101 and the second electrode 112 are also bent in line with the source wiring 108, and the second electrode 112 are It has the same configuration as the FFS type liquid crystal display device shown in the second embodiment, except that the branch opening pattern 112h extends along the source wiring 108 and is bent. Accordingly, the contents described in the second embodiment are also applicable to the present embodiment. Hereinafter, even if it shows with the same code|symbol about the same component as 2nd Embodiment, description is abbreviate|omitted.

Accordingly, the contents described in the second to fifth embodiments are applicable also to the present embodiment.

Like the opening patterns 112h of FIGS. 6A to 6B , by arranging opening patterns having different directions, a plurality of regions in which liquid crystal molecules operate in different directions can be formed. That is, it can be set as a multi-domain structure. By setting it as a multi-domain structure, when it sees from a certain direction, it can prevent that the display of an image is not accurate, As a result, a viewing angle can be improved.

Further, since the source wiring 108 is also bent along the opening pattern 112h, the layout can be efficiently performed and the opening ratio can be improved.

Also according to this embodiment, the same effect as that of the second embodiment can be obtained. In addition, in this embodiment, the shape of the opening pattern which the 2nd electrode 112 has may be made into the shape shown by 2nd Embodiment or 4th Embodiment.

In addition, this embodiment shows an example at the time of a part change, improvement, or deformation|transformation of the content demonstrated in 2nd Embodiment - 5th Embodiment. Accordingly, the contents described in the second to fifth embodiments can be applied to or combined with the present embodiment.

In addition, although the description was made using various drawings, one drawing is established by various components. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

(Embodiment 7)

Fig. 7A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a seventh embodiment of the present invention. Fig. 7B is a cross-sectional view EF and GH of Fig. 7A. In this embodiment, the point where the source wiring 108 is bent, the point where the first electrode 101 and the second electrode 112 are also bent in accordance with the source wiring 108, and the point where the second electrode 112 is It has the same configuration as the FFS type liquid crystal display device shown in the second embodiment, except that the branch opening pattern 112h extends along the source wiring 108 and is bent. Accordingly, the contents described in the third embodiment are also applicable to the present embodiment. Hereinafter, about the same structural part as 3rd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to sixth embodiments are applicable also to the present embodiment.

As in the opening pattern 112h of FIGS. 7A to 7B , by arranging opening patterns having different directions, a plurality of regions in which liquid crystal molecules operate in different directions can be formed. That is, it can be set as a multi-domain structure. By setting it as a multi-domain structure, when it sees from a certain direction, it can prevent that the display of an image is not accurate, As a result, a viewing angle can be improved.

Further, since the source wiring 108 is also bent along the opening pattern 112h, the layout can be efficiently performed and the opening ratio can be improved.

Also in this embodiment, the same effect as that of the third embodiment can be obtained. In addition, in this embodiment, the shape of the opening pattern which the 2nd electrode 112 has may be made into the shape shown by 2nd Embodiment or 4th Embodiment.

In addition, this embodiment shows an example at the time of a part change, improvement, or deformation|transformation of the content demonstrated in 2nd Embodiment - 6th Embodiment. Accordingly, the contents described in the second to fifth embodiments can be applied to or combined with the present embodiment.

In addition, although the description was made using various drawings, one drawing is established by various components. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

(Embodiment 8)

Fig. 8A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to an eighth embodiment of the present invention. Fig. 8B is a cross-sectional view taken along EF and GH of Fig. 8A. This embodiment has the same configuration as the second embodiment, except that the conductive film 160 positioned on the lower front surface of the semiconductor film 103 is formed on the substrate 100 . In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as 2nd Embodiment except that the conductive film 160 is formed in the same process as that of the 1st electrode 101. FIG. Accordingly, the contents described in the second embodiment are also applicable to the present embodiment. In addition, the conductive film 160 is not electrically connected to any member and is in a floating state. Hereinafter, about the same component as 2nd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to seventh embodiments are applicable also to the present embodiment.

Also in this embodiment, the same effects as in the second embodiment can be obtained. In addition, since the conductive film 160 located below the semiconductor film 103 is formed on the substrate 100, the insulating film 102 may be a single layer of a silicon oxide film. When the conductive film 160 is not formed and the insulating film 102 is a single silicon oxide film, there is a possibility that diffusion of impurities from the substrate 100 to the semiconductor film 103 cannot be sufficiently suppressed. Therefore, it is necessary to apply a silicon nitride film to the insulating film 102 . However, when the silicon nitride film and the semiconductor film 103 are connected, the operation of the thin film transistor 121 becomes unstable. In contrast, in the present embodiment, by forming the conductive film 160 , diffusion of impurities from the substrate 100 into the semiconductor film 103 can be sufficiently suppressed even when the insulating film 102 is a single silicon oxide film. have. Therefore, by forming the insulating film 102 as a single silicon oxide film, the operation of the thin film transistor 121 can be stabilized.

In addition, the insulating film 102 may have a laminated structure of a silicon oxide film and a silicon nitride film. In this way, even if the silicon oxide film contains impurities such as iron, it is possible to suppress diffusion of the impurities into the semiconductor film 103 . In addition, penetration of impurities from the substrate 100 can be better blocked.

Further, in each of the liquid crystal display device of the FFS system shown in the third embodiment and the liquid crystal display device of the IPS system shown in the fourth and fifth embodiments, even if the conductive film 160 is formed, the The same effect can be obtained. In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the shape shown in 4th Embodiment.

In addition, by arranging the opening patterns 112a and 112b in different directions, a plurality of regions in which the liquid crystal molecules operate in different directions can be formed. That is, it can be set as a multi-domain structure. By setting it as a multi-domain structure, when it sees from a certain direction, it can prevent that the display of an image is not accurate, As a result, a viewing angle can be improved.

In addition, this embodiment shows an example at the time of a part change, improvement, or deformation|transformation of the content demonstrated in 2nd Embodiment - 7th Embodiment. Accordingly, the contents described in the second to seventh embodiments can be applied to or combined with the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

(Embodiment 9)

Fig. 9A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a ninth embodiment of the present invention. Fig. 9B is a cross-sectional view taken along EF and GH of Fig. 9A. This embodiment has the same configuration as that of the second embodiment, except that a part of the first electrode 101 extends from the semiconductor film 103 to the lower side of the impurity region 103b. In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 2nd Embodiment. Accordingly, the contents described in the second embodiment are also applicable to the present embodiment. Hereinafter, about the same component as 2nd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to eighth embodiments are applicable also to the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Also in this embodiment, the same effects as in the second embodiment can be obtained. In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the shape shown by 4th Embodiment. Further, in each of the liquid crystal display device of the FFS system shown in the sixth embodiment and the liquid crystal display device of the IPS system shown in the fifth embodiment, as in the present embodiment, a part of the first electrode 101 is formed with an impurity region 103b. ) may be located below the

Further, in each of the liquid crystal display devices of the FFS system shown in the third embodiment and the seventh embodiment, and the liquid crystal display devices of the IPS system shown in the fourth embodiment, as in the present embodiment, the A part may be located below the impurity region 103b. In this way, the voltage of the first electrode 101 is the same as the voltage of the impurity region 103b, and it is hardly affected by noise or the like, and the voltage of the impurity region 103b is stable. As a result, the gap between the opening patterns 112a can be narrowed, or the method of applying an electric field becomes smooth, so that it is easy to control the liquid crystal molecules. Moreover, since the voltage can be made small by narrowing the space|interval of the opening pattern 112a, power consumption can also be made small. In addition, since the concentration of the electric field is also alleviated, the reliability of the thin film transistor 121 is also improved.

Further, in the present embodiment, a portion of the first electrode 101 located below the impurity region 103b is separated from the main body of the first electrode 101 and electrically connected to the conductive film 109 for connection. You can connect. Even in this way, the above-described effect can be obtained. That is, the liquid crystal molecules are easy to control, the power consumption is reduced, and the reliability of the thin film transistor 121 is improved.

(Embodiment 10)

Fig. 10A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a tenth embodiment of the present invention. Fig. 10B is a cross-sectional view EF and GH of Fig. 10A. In the present embodiment, a part of the first electrode 101 extends to the bottom of each of the impurity regions 103b, the two channel regions 103c, and the impurity regions between the channel regions 103c in the semiconductor film 103. It has the same configuration as the ninth embodiment except for the extension. In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 9th Embodiment. Accordingly, the contents described in the ninth embodiment are also applicable to the present embodiment. Hereinafter, about the same component as 9th Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to ninth embodiments are applicable also to the present embodiment.

In addition, although various drawings were used and demonstrated, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Also in this embodiment, the same effects as in the ninth embodiment can be obtained. Further, in each of the liquid crystal display device of the FFS system shown in the sixth embodiment and the liquid crystal display device of the IPS system shown in the fifth embodiment, a part of the first electrode 101 is formed with the impurity region 103b as in the present embodiment. ), the two channel regions 103c and each of the impurity regions between the channel regions 103c may extend below each other.

In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the shape shown in 4th Embodiment.

Further, in each of the liquid crystal display devices of the FFS system shown in the third embodiment and the seventh embodiment, and the liquid crystal display devices of the IPS system shown in the fourth embodiment, as in the present embodiment, the Part of the impurity region 103b, the two channel regions 103c, and the channel region 103c may extend below each of the impurity regions between the channel regions 103c. In this way, the voltage of the first electrode 101 is the same as the voltage of the impurity region 103b, and it is hardly affected by noise or the like, and the voltage of the impurity region 103b is stable. As a result, the gap between the opening patterns 112a can be narrowed, or the method of applying an electric field becomes smooth, so that it is easy to control the liquid crystal molecules. Moreover, since the voltage can be made small by narrowing the space|interval of the opening pattern 112a, power consumption can also be made small. In addition, since the concentration of the electric field is also alleviated, the reliability of the thin film transistor 121 is also improved.

Further, in the present embodiment, a portion of the first electrode 101 located below each of the impurity regions 103b, the two channel regions 103c, and the impurity regions between the channel regions 103c is formed as the first electrode. It may be separated from the main body of 101 and electrically connected to the conductive film 109 for connection. Even if it does in this way, the said effect can be acquired. That is, the liquid crystal molecules are easy to control, the power consumption is reduced, and the reliability of the thin film transistor 121 is improved.

(Embodiment 11)

11A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to an eleventh embodiment of the present invention. Fig. 11B is a cross-sectional view taken along EF and GH of Fig. 11A. This embodiment has the same configuration as that of the tenth embodiment, except that a part of the first electrode 101 extends below the entire surface of the semiconductor film 103 . In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 10th Embodiment. Accordingly, the contents described in the tenth embodiment are also applicable to the present embodiment. Hereinafter, about the same component as 10th Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to tenth embodiments are applicable also to the present embodiment.

In addition, although the description was made using various drawings, one drawing is established by various components. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Also in this embodiment, the same effect as that of the tenth embodiment can be obtained. Further, by the same operation as in the eighth embodiment, even when the insulating film 102 is a single silicon oxide film, diffusion of impurities from the substrate 100 to the semiconductor film 103 can be sufficiently suppressed. Therefore, by forming the insulating film 102 as a single silicon oxide film, the operation of the thin film transistor 121 can be stabilized.

In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the shape shown in 4th Embodiment. Further, in each of the liquid crystal display device of the FFS system shown in the sixth embodiment and the liquid crystal display device of the IPS system shown in the fifth embodiment, a part of the first electrode 101 is formed by the semiconductor film 103 as in the present embodiment. ) may be extended to the lower side of the front.

Further, in each of the liquid crystal display devices of the FFS system shown in the third embodiment and the seventh embodiment, and the liquid crystal display devices of the IPS system shown in the fourth embodiment, as in the present embodiment, the A part of the semiconductor film 103 may be extended below the entire surface of the semiconductor film 103 . In this way, the voltage of the first electrode 101 is the same as the voltage of the impurity region 103b, and it is hardly affected by noise or the like, and the voltage of the impurity region 103b is stable. As a result, the gap between the opening patterns 112a can be narrowed, or the method of applying an electric field becomes smooth, so that it is easy to control the liquid crystal molecules. Moreover, since the voltage can be made small by narrowing the space|interval of the opening pattern 112a, power consumption can also be made small. In addition, since the concentration of the electric field is also alleviated, the reliability of the thin film transistor 121 is also improved.

Further, in the present embodiment, a portion of the first electrode 101 located below the semiconductor film 103 is separated from the main body of the first electrode 101 and electrically connected to the conductive film 109 for connection. may do Even if it does in this way, the said effect can be acquired. That is, the liquid crystal molecules are easy to control, the power consumption is reduced, and the reliability of the thin film transistor 121 is improved.

(Embodiment 12)

Fig. 12A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a twelfth embodiment of the present invention. Fig. 12B is a cross-sectional view EF and GH of Fig. 12A. In the present embodiment, a conductive film 170 is formed on the substrate 100, of the semiconductor film 103, below the impurity region 103a electrically connected to the source wiring 108; and the conductive film 170 is electrically connected to the source wiring 108, but has the same configuration as the second embodiment. In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as 2nd Embodiment except that the conductive film 170 is formed in the same process as that of the 1st electrode 101. FIG. Accordingly, the contents described in the second embodiment are also applicable to the present embodiment. In addition, the conductive film 160 is not electrically connected to any member and is in a floating state. Hereinafter, about the same structural part as 2nd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to eleventh embodiments are applicable also to the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Connection holes positioned over the conductive film 170 are formed in the first interlayer insulating film 107 , the gate insulating film 104 , and the insulating film 102 . The source wiring 108 is electrically connected to the conductive film 170 by being partially buried in the connection hole.

Also in this embodiment, the same effects as in the second embodiment can be obtained. The same voltage as that of the impurity region 103a is also applied to the conductive film 170 located below the impurity region 103a electrically connected to the source wiring 108 . Therefore, the voltage of the impurity region 103a is stable.

Further, the liquid crystal display devices of the FFS system shown in the third embodiment, the sixth embodiment, the seventh embodiment, the ninth embodiment, and the tenth embodiment, and the IPS system shown in the fourth and fifth embodiments In each of the liquid crystal display devices, the conductive film 170 as in the present embodiment may be formed. Even in this way, the same effect as this embodiment can be acquired. For example, the voltage of the impurity region 103a may be stabilized. In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the formation shown in 4th Embodiment.

(Embodiment 13)

Fig. 13A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a thirteenth embodiment of the present invention. Fig. 13B is a cross-sectional view taken along EF and GH of Fig. 13A. In the present embodiment, the conductive film 170 is formed in the semiconductor film 103 below the channel region 103c adjacent to the impurity region 103a and the impurity region 103a, and the first electrode 101 is The configuration is the same as in the twelfth embodiment, except that a portion of the semiconductor film 103 is formed below the channel region 103c adjacent to the impurity region 103b and the impurity region 103b. In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 12th Embodiment. Accordingly, the contents described in the twelfth embodiment are also applicable to the present embodiment. Hereinafter, about the same structural part as 12th Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents shown in the second to twelfth embodiments are applicable also to the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it. Also in this embodiment, the same effects as those of the twelfth embodiment and the same effects as those of the ninth embodiment can be obtained. Further, in each of the liquid crystal display devices of the FFS system shown in the third embodiment, the sixth embodiment, and the seventh embodiment, and the liquid crystal display devices of the IPS system shown in the fourth embodiment and the fifth embodiment, this embodiment The conductive film 170 having the same shape may be formed, and the shape of the first electrode 101 may be the same as that of the present embodiment. Even in this way, the same effect as this embodiment can be acquired. In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the shape shown by 4th Embodiment.

(Embodiment 14)

Fig. 14A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a fourteenth embodiment of the present invention. Fig. 10B is a cross-sectional view EF and GH of Fig. 10A. In the present embodiment, the conductive film 170 is formed under the impurity region 103a, the two channel regions 103c, and the impurity regions between the channel regions 103c in the semiconductor film 103, respectively. Except for , it has the same configuration as the twelfth embodiment. In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 12th Embodiment. Accordingly, the contents described in the twelfth embodiment are also applicable to the present embodiment. Hereinafter, the same components as those of the twelfth embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.

Accordingly, the contents shown in the second to thirteenth embodiments are applicable also to the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Also in this embodiment, the same effects as in the twelfth embodiment can be obtained. For example, the voltage of the impurity region 103a may be stabilized. Further, the liquid crystal display devices of the FFS system shown in the third embodiment, the sixth embodiment, the seventh embodiment, and the ninth embodiment, and the liquid crystal display devices of the IPS system shown in the fourth embodiment and the fifth embodiment, respectively In this embodiment, a conductive film 170 similar to that of the present embodiment may be formed. Even in this way, the same effect as this embodiment can be acquired. For example, the voltage of the impurity region 103a may be stabilized. In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the shape shown in 4th Embodiment.

(Embodiment 15)

15A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a fifteenth embodiment of the present invention. Fig. 15B is a cross-sectional view EF and GH of Fig. 15A. This embodiment has the same configuration as the fourteenth embodiment, except that the conductive film 170 is formed under the entire surface of the semiconductor film 103 . In addition, the manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 14th Embodiment. Hereinafter, about the same structure as 14th Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to fourteenth embodiments are applicable also to the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Also in this embodiment, the same effect as that of the fourteenth embodiment can be obtained. For example, the voltage of the impurity region 103a may be stabilized. Further, the liquid crystal display devices of the FFS system shown in the third embodiment, the sixth embodiment, the seventh embodiment, and the ninth embodiment, and the liquid crystal display devices of the IPS system shown in the fourth embodiment and the fifth embodiment, respectively In this embodiment, a conductive film 170 similar to that of the present embodiment may be formed. Even in this way, the same effects as in the present embodiment can be obtained, for example, the voltage of the impurity region 103a can be stabilized. In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the shape shown in 4th Embodiment.

(Embodiment 16)

Fig. 16A is a plan view for explaining the configuration of a liquid crystal display device of the FFS system according to the sixteenth embodiment of the present invention. Fig. 16B is a cross-sectional view taken along EF and GH of Fig. 16A. This embodiment has the same configuration as the second embodiment except that the second gate wiring 180 and the second gate electrodes 180a and 180b are formed on the substrate 100 . When viewed from a direction substantially perpendicular to the substrate 100 , each of the second gate wiring 180 and the second gate electrodes 180a and 180b is approximately equal to the gate wiring 105 and the gate electrodes 105a and 105b. overlap

In addition, in the manufacturing method of the liquid crystal display device according to the present embodiment, except that the second gate wiring 180 and the second gate electrodes 180a and 180b are formed in the same process as that of the first electrode 101 . , which is approximately the same as in the second embodiment. Accordingly, the contents described in the second embodiment are also applicable to the present embodiment. Hereinafter, about the same structural part as 2nd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to fifteenth embodiments are applicable also to the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Also in this embodiment, the same effects as in the second embodiment can be obtained. In addition, the two channel regions 103c of the semiconductor film 103 are sandwiched between the gate electrode 105a and the second gate electrode 180a, or the gate electrode 105b and the second gate electrode 180b. Therefore, since the channel area is substantially doubled, the amount of current flowing through the thin film transistor 121 increases.

Further, the liquid crystal display devices of the FFS system shown in the third, sixth, seventh, ninth, and twelfth embodiments, and the IPS system shown in the fourth and fifth embodiments. In the liquid crystal display device of , as in the present embodiment, the second gate wiring 180 and the second gate electrodes 180a and 180b may be formed in the same process as that of the first electrode 101 . Even in this way, the same effect as this embodiment can be acquired. In addition, in this embodiment, the shape of the 2nd electrode 112 and the opening pattern 112a may be made into the formation shown in 4th Embodiment.

(Embodiment 17)

Fig. 17A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a seventeenth embodiment of the present invention. Fig. 17B is a cross-sectional view EF, GH, and IJ of Fig. 17A. In this embodiment, except that the gate wiring 105 is not formed and the gate electrodes 105a and 105b are electrically connected to the second gate wiring 180 via the connection wiring 105c, It has the same configuration as the sixteenth embodiment. Accordingly, the contents described in the sixteenth embodiment are also applicable to the present embodiment. The wiring 105c for connection is formed of the same wiring layer as the gate electrodes 105a and 105b.

Accordingly, the contents described in the second to sixteenth embodiments are applicable also to the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Connection holes positioned on the second gate wiring 180 are formed in the insulating film 102 and the gate insulating film 104 . The connection wiring 105c is electrically connected to the second gate wiring 180 by partially filling the connection hole.

In addition, the method of the liquid crystal display device which concerns on this embodiment is substantially the same as 2nd Embodiment except the point that the wiring 105c for connection is formed in the same process as the gate electrodes 105a, 105b. Hereinafter, about the same structure as 2nd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Also in this embodiment, the same effects as in the sixteenth embodiment can be obtained. Further, the liquid crystal display devices of the FFS system shown in the third embodiment, the sixth embodiment, the seventh embodiment, the ninth embodiment, and the twelfth embodiment, and the IPS system shown in the fourth embodiment and the fifth embodiment In each of the liquid crystal display devices of ), the gate electrodes 105a and 105b may be electrically connected to the second gate wiring 180 via the connection wiring 105c. Even in this way, the same effect as this embodiment can be acquired. In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the shape shown in 4th Embodiment.

(Embodiment 18)

18A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to an eighteenth embodiment of the present invention. Fig. 18B is a cross-sectional view taken along EF and GH of Fig. 18A. This embodiment has the same configuration as that of the second embodiment, except that the thin film transistor 121 is a bottom-gate transistor. Accordingly, the contents described in the second embodiment are also applicable to the present embodiment. Hereinafter, about the same structural part as 2nd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to seventeenth embodiments are applicable also to the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

In this embodiment, the gate electrodes 105a and 105b, the auxiliary wiring 106, and the gate wiring 105 are formed on the substrate 100, and the gate insulating film 104 includes the substrate 100 and the gate electrode. 105a and 105b, the auxiliary wiring 106, and the gate wiring 105 are formed respectively. Further, the semiconductor film 103 is formed over the gate insulating film 104 .

The manufacturing method of the liquid crystal display device which concerns on this embodiment is as follows. First, the first electrode 101 and the insulating film 102 are formed on the substrate 100 . Next, a conductive film is formed on the insulating film 102 .

In addition, the conductive film is aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium (Cr), nickel (Ni), platinum (Pt), One or more elements selected from gold (Au) and silver (Ag), a compound containing one or more elements selected from the group as a component, or a combination of these compounds, and one or more selected from the group It is formed from a compound (silicide) of a plurality of elements and silicon. In addition, silicon (Si) to which an n-type impurity has been introduced may be used.

Next, this conductive film is selectively removed by etching using a resist pattern. Accordingly, on the insulating film 102, the gate electrodes 105a and 105b, the auxiliary wiring 106, and the gate wiring 105 are formed. After that, the resist pattern is removed. Next, a gate insulating film 104 is formed.

Next, a semiconductor film is formed over the gate insulating film 104, and the semiconductor film is selectively removed by etching using a resist pattern. Thus, the semiconductor film 103 is formed. After that, the resist pattern is removed.

Next, a resist pattern is formed on the semiconductor film 103 , and impurities are implanted into the semiconductor film 103 using the resist pattern as a mask. Thus, the impurity regions 103a and 103b and the impurity regions located between the gate electrodes 105a and 105b are formed. In addition, when the substrate 100 is formed of a transparent material such as glass, when the resist pattern is formed, the gate wiring is exposed from the back surface of the substrate 100 as an exposure pattern without using an exposure mask. In some cases, a resist pattern is formed. In this case, since the number of steps for delivery that does not use a mask for exposure can be reduced, the manufacturing cost can be reduced. In addition, since the resist pattern can be formed in self-alignment, there is an advantage that the difference in resist pattern is suppressed and there is no need to take this difference into account. The subsequent steps are the same as in the second embodiment.

Also in this embodiment, the same effects as in the second embodiment can be obtained. In addition, in the liquid crystal display device of the FFS system or IPS system shown in each of the third to fourteenth embodiments, the thin film transistor for driving the pixel may be a bottom gate type thin film transistor as in the present embodiment. In addition, in this embodiment, you may make the shape of the 2nd electrode 112 and the opening pattern 112a into the shape shown in 4th Embodiment.

(Embodiment 19)

Fig. 19A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a nineteenth embodiment of the present invention. Fig. 19B is a cross-sectional view taken along IJ and KL of Fig. 19A. The liquid crystal display device according to the present embodiment differs in the configuration of the thin film transistor for controlling the second electrode 112 serving as the pixel electrode, the absence of the second interlayer insulating film 111 , the second electrode 112 and the second electrode 112 . A point where an alignment film 113 is formed on the first interlayer insulating film 107, a point where a source wiring 108 and a conductive film for connection 109 are formed on the gate insulating film 104, and a point where a conductive film for connection ( It has the same configuration as the second embodiment, except that 110 is formed on the same layer as the second electrode 112 . Hereinafter, about the same structure as 2nd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to eighteenth embodiments are applicable also to the present embodiment.

In addition, although various drawings were used and demonstrated, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

In the present embodiment, the thin film transistor 122 is of a bottom gate type, and a gate insulating film 104 is formed over the gate wiring 105 . A semiconductor film 123 serving as a channel region is formed on the gate insulating film 104 . The semiconductor film 123 is, for example, an amorphous silicon film.

The semiconductor film 123 is electrically connected to the source wiring 108 via the n-type semiconductor film 124a, and electrically connected to the connection conductive film 109 via the n-type semiconductor film 124b. . The n-type semiconductor films 124a and 124b are polysilicon films doped with phosphorus or arsenic, for example, and function as a source or a drain.

The manufacturing method of the liquid crystal display device which concerns on this embodiment is as follows. First, the first electrode 101 and the insulating film 102 are formed on the substrate 100 . Next, a conductive film is formed on the insulating film 102 .

In addition, the conductive film is aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium (Cr), nickel (Ni), platinum (Pt), One or more elements selected from gold (Au) and silver (Ag), a compound containing one or more elements selected from the group as a component, or a combination of these compounds, and one or more selected from the group It is formed from a compound (silicide) of a plurality of elements and silicon. In addition, silicon (Si) to which an n-type impurity has been introduced may be used.

Next, this conductive film is selectively removed by etching using a resist pattern. Accordingly, on the insulating film 102 , the gate wiring 105 and the auxiliary wiring 106 are formed. After that, the resist pattern is removed. Next, a gate insulating film 104 is formed.

Next, a semiconductor film is formed over the gate insulating film 104 by, for example, a CVD method, and the semiconductor film is selectively removed by etching using a resist pattern. Thus, the semiconductor film 123 is formed. After that, the resist pattern is removed.

Next, a semiconductor film is formed on the semiconductor film 123 and on the gate insulating film 104 , and an n-type impurity is implanted into the semiconductor film. Next, this semiconductor film is selectively removed by etching using a resist pattern. Accordingly, n-type semiconductor films 124a and 124b are formed on the semiconductor film 123 . After that, the resist pattern is removed.

Next, a conductive film is formed on each of the semiconductor film 123, the n-type semiconductor films 124a, 124b, and the gate insulating film 104, and the conductive film is selectively removed by etching using a resist pattern. Accordingly, the source wiring 108 and the conductive film 109 for connection are formed. After that, the resist pattern is removed.

Next, a first interlayer insulating film 107 is formed. Next, in the first interlayer insulating film 107, a connection hole positioned over the conductive film 109 for connection is formed. Further, in this step, in the first interlayer insulating film 107 and the gate insulating film 104, a connection hole positioned over the auxiliary wiring 106 is formed, and the first interlayer insulating film 107 and the gate insulating film 104 are formed. , and a connection hole positioned on the first electrode 101 is formed in the insulating film 102 .

Next, a light-transmitting conductive film (for example, an ITO film, an IZO film, a ZnO film, or a Si film) is formed on the first interlayer insulating film 107 and in each connection hole, and this conductive film is a resist film. It is selectively removed by etching using a pattern. Accordingly, the second electrode 112 and the conductive film 110 for connection are formed. Next, a first alignment film 113 is formed on each of the first interlayer insulating film 107 , the second electrode, and the conductive film 110 for connection. Subsequent steps are the same as the manufacturing method of the liquid crystal display device according to the second embodiment.

Also according to this embodiment, the same effect as that of the second embodiment can be obtained. Alternatively, the source wiring 108 and the conductive film 109 for connection may be directly connected to the semiconductor film 123 without forming the n-type semiconductor films 124a and 124b. In addition, the shape of the opening pattern of the 2nd electrode 112 may be made into the same shape as 5th Embodiment.

Further, in each of the liquid crystal display device of the FFS system shown in the sixth to eighteenth embodiments and the liquid crystal display device of the IPS system shown in the fifth embodiment, as in the present embodiment, by changing the configuration of the thin film transistor, Without forming the second interlayer insulating film 111 , the second electrode 112 and the first alignment film 113 are formed on the first interlayer insulating film 107 , and the source wiring 108 and the conductive film 109 for connection are formed. may be formed on the gate insulating film 104 , and the connecting conductive film 110 may be formed on the same layer as the second electrode 112 .

(Embodiment 20)

Fig. 20A is a plan view for explaining the configuration of an FFS-type liquid crystal display device according to a twentieth embodiment of the present invention. 20B is an MN cross-sectional view and an OP cross-sectional view of FIG. 20A. In this embodiment, the conductive film for connection 110 electrically connects the conductive film 109 for connection and the first electrode 101 , and the second electrode 112 is connected to the auxiliary wiring 106 . In the same manner as in the 19th embodiment, except for the point and the point where the second electrode 112 protrudes outside the first electrode 101 when viewed from a direction perpendicular to the substrate 100 . is composition. The first electrode 101 functions as a pixel electrode, and the second electrode 112 functions as a common electrode.

The manufacturing method of the liquid crystal display device which concerns on this embodiment is the same as the manufacturing method of the liquid crystal display device which concerns on 19th Embodiment. Accordingly, the present embodiment described in the nineteenth embodiment can also be applied.

Accordingly, the contents described in the second to nineteenth embodiments are applicable also to the present embodiment.

In addition, although it demonstrated using various drawings, one drawing is established by various structural elements. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Also according to this embodiment, the same effect as that of the second embodiment can be obtained. Alternatively, the source wiring 108 and the conductive film 109 for connection may be directly connected to the semiconductor film 123 without forming the n-type semiconductor films 124a and 124b. In addition, the shape of the opening pattern of the 2nd electrode 112 may be made into the same shape as 4th Embodiment.

In addition, an opening pattern may be formed in the first electrode 101 as well. In this case, it becomes a device for controlling the alignment direction of the liquid crystal by the IPS method. In addition, the shape of the 1st electrode 101 and the 2nd electrode 112, and the shape of the opening pattern which these electrodes have are the shapes shown in 4th Embodiment, for example.

(Embodiment 21)

Fig. 21A is a cross-sectional view for explaining the configuration of an FFS type liquid crystal display device according to a twenty-first embodiment of the present invention. This cross-sectional view shows the cross section corresponding to the EF cross-sectional view and GH cross-sectional view of FIG. 3A. In this embodiment, the second interlayer insulating film 111 shown in FIG. 3B is not formed, the second electrode 112 is positioned on the first interlayer insulating film 107 , and a part of the second electrode 112 . It has the same configuration as that of the third embodiment, except that it is positioned on the conductive film 110 for connection.

The manufacturing method of the liquid crystal display device according to the present embodiment is substantially the same as that of the third embodiment, except that the step of forming the second interlayer insulating film 111 is omitted. Accordingly, the contents described in the third embodiment are also applicable to the present embodiment. Hereinafter, about the same structural part as 3rd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

The second electrode 112 may be formed with the source wiring 108 or the like at the same time. That is, the same material may be used and simultaneously processed and formed. As a result, the step of forming the electrode having light-transmitting properties can be omitted, and the cost can be reduced.

Therefore, the second electrode 112 may not have light transmittance. That is, the second electrode 112 may have a property of reflecting light.

Accordingly, the contents described in the second to twentieth embodiments are applicable also to the present embodiment.

In addition, although the description was made using various drawings, one drawing is established by various components. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Also in this embodiment, the same effect as that of the third embodiment can be obtained. Further, since the step of forming the second interlayer insulating film 111 is omitted, the manufacturing cost can be reduced. In addition, even with this structure, since the first electrode 101 is disposed under the insulating film 102 functioning as a base film, the gap between the first electrode 101 and the second electrode 112 can be sufficiently large. and an appropriate electric field may be applied to the liquid crystal 114 .

Further, in each of the liquid crystal display devices of the FFS system shown in the second embodiment, the sixth embodiment to the eighteenth embodiment, and the liquid crystal display devices of the IPS system shown in the fourth embodiment and the fifth embodiment, this embodiment As described above, without forming the second interlayer insulating film 111 , the second electrode 112 is disposed on the first interlayer insulating film 107 , and a part of the second electrode 112 is formed on the conductive film 110 for connection. may be positioned. Also in this case, the same effect as this embodiment can be acquired.

(Embodiment 22)

Fig. 21B is a cross-sectional view for explaining the configuration of an FFS type liquid crystal display device according to a twenty-second embodiment of the present invention. This cross-sectional view shows the cross section corresponding to the EF cross-sectional view and GH cross-section of FIG. 1A. In this embodiment, all of the second electrodes 112 are located on the first interlayer insulating film 107 , and a part of the conductive film 110 for connection is located on the second electrode 112 , except that , the same configuration as in the twenty-first embodiment.

The manufacturing method of the liquid crystal display device according to the present embodiment takes into account that after the second electrode 112 is formed, the source wiring 108, the conductive film 109 for connection, and the conductive film 110 for connection are formed. Except that, it is substantially the same as the twenty-first embodiment. Accordingly, the contents described in the twenty-first embodiment are also applicable to the present embodiment. Hereinafter, about the same structural part as 21st Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to twenty-first embodiments are applicable also to the present embodiment.

In addition, although the description was made using various drawings, one drawing is established by various components. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

Also according to this embodiment, the same effect as that of the twenty-first embodiment can be obtained. In addition, since the conductive film 110 for connection is positioned on the second electrode 112 , disconnection of the second electrode 112 can be prevented. That is, as in the twenty-first embodiment, when the second electrode 112 is formed on the conductive film 110 for connection, the conductive film for connection 110 is formed thicker than the second electrode 112 in many cases. , there is a possibility that the second electrode 112 may be disconnected at the end of the conductive film 110 for connection. On the other hand, when the second electrode 112 is formed under the conductive film 110 for connection as in the present embodiment, disconnection of the second electrode 112 can be prevented. In addition, as described above, since the conductive film 110 for connection is formed thick in many cases, the possibility that the conductive film 110 for connection causes disconnection is low. In addition, since the process of forming the second interlayer insulating film 111 is omitted, the manufacturing cost can be reduced. In addition, even with this structure, since the first electrode 101 is disposed under the insulating film 102 functioning as a base film, the distance between the first electrode 101 and the second electrode 112 can be sufficiently large. and an appropriate electric field may be applied to the liquid crystal 114 .

Further, in each of the liquid crystal display devices of the FFS system shown in the second embodiment, the sixth embodiment to the eighteenth embodiment, and the liquid crystal display devices of the IPS system shown in the fourth embodiment and the fifth embodiment, this embodiment As described above, without forming the second interlayer insulating film 111 , the second electrode 112 is disposed on the first interlayer insulating film 107 , and a part of the conductive film 110 for connection is placed on the second electrode 112 . Even if it is positioned, the same effect as the present embodiment can be obtained.

(Embodiment 23)

Fig. 22 is a cross-sectional view for explaining the configuration of an FFS type liquid crystal display device according to a twenty-third embodiment of the present invention. This cross-sectional view shows the cross section corresponding to the EF cross-sectional view and GH cross-sectional view of FIG. 3A. In this embodiment, a metal film 110a is formed on the second interlayer insulating film 111, and the second electrode 112 and the conductive film 110 for connection are electrically connected via the metal film 110a. It is the same as that of the third embodiment except for the above. Accordingly, the contents described in the third embodiment can also be applied to the present embodiment. Hereinafter, about the same structural part as 3rd Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Accordingly, the contents described in the second to twenty-second embodiments are applicable also to the present embodiment.

In addition, although the description was made using various drawings, one drawing is established by various components. Accordingly, in each of the drawings, with respect to each component, it is also possible to produce another component by combining it.

The metal film 110a is connected to the conductive film 110 for connection by partially filling the connection hole formed in the second interlayer insulating film 111 . The second electrode 112 is partially located in the metal film 110a and is electrically connected to the metal film 110a.

Further, in the manufacturing method of the liquid crystal display device according to the present embodiment, the metal film 110a is formed between the step of forming a connection hole in the second interlayer insulating film 111 and the step of forming the second electrode 112 . Silver is formed by forming a metal film on the second interlayer insulating film 111 and in the connection hole, and selectively removing the metal film by etching using a resist pattern.

Also in this embodiment, the same effect as that of the third embodiment can be obtained.

Further, in the liquid crystal display device of the IPS system shown in the fourth embodiment, the metal film 110a may be formed. Further, in each of the liquid crystal device of the FFS system described in the second embodiment, the sixth embodiment, the fourth eighteenth embodiment, and the liquid crystal display device of the IPS system described in the fifth embodiment, a metal film such as the metal film 110a It may be formed above the conductive film 109 for connection, and you may make it electrically connect the conductive film 109 for connection and the 2nd electrode 112 through this metal film.

(Embodiment 24)

23 is a cross-sectional view for explaining the configuration of a pixel portion of an FFS-type liquid crystal display device according to a twenty-fourth embodiment of the present invention. In the pixel portion of the liquid crystal display device according to the present embodiment, a red color filter 130r and a blue color filter 130b are replaced with the first interlayer insulating film 107 without disposing a color filter on the opposite substrate 120 side. ) and a green color filter 130g, except that the configuration is substantially the same as in the second embodiment. Accordingly, the contents described in the second to twenty-third embodiments are also applicable to the present embodiment. Hereinafter, about the same structural part as 2nd Embodiment, it shows with the same code|symbol, and abbreviate|omits description. In addition, since the gate insulating film 104 is located between the color filters 130r, 130b, and 130g and the semiconductor film 103, it also functions to suppress diffusion of impurities from each color filter into the semiconductor film 103. have

In addition, an insulating film of an inorganic material may be disposed between the color filter and the gate electrodes 105a and 105b. As the inorganic material, an insulating material containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy: x&gt;y), silicon oxynitride (SiNxOy: x&gt;y), can be used. In order to block the penetration of impurities, it is preferable to use a material containing a lot of nitrogen.

In addition, colors other than red, blue, and green may be sufficient as the color of a color filter, and there are more than three colors, for example, 4 colors or 6 colors may be sufficient. For example, yellow, indigo, magenta or white may be added. In addition, you may arrange|position not only a color filter but a black matrix.

In this way, by disposing the color filter on the substrate 100 , it is not necessary to accurately align the color filter with the counter substrate 120 , so that it can be easily manufactured, and the cost is reduced, and the manufacturing yield is improved. do.

In the manufacturing method of the liquid crystal display device according to the present embodiment, the second step of forming the color filters 130r, 130g, and 130b is inserted instead of the step of forming the first interlayer insulating film 107. It is the same as that of embodiment thru|or 23rd embodiment. The color filters 130r, 130g, and 130b are formed by repeating a process of forming a color filter layer, a process of forming a resist pattern on the color filter layer, and a process of selectively dry etching the color filter layer using the resist pattern as a mask three times. is formed Moreover, it is formed using a photosensitive material, a pigment, etc. without using a resist. In addition, although a space is created between the color filter layers, the second interlayer insulating film 111 is buried in this space. In addition, an inorganic material or an organic material is further laminated. Moreover, a black matrix etc. are laminated|stacked. In addition, the color filters 130r, 130g, 130b and the black matrix can be formed even if a droplet discharging method (for example, an inkjet method) is used.

Accordingly, it is possible to reduce the manufacturing process of the liquid crystal display device. Further, since the color filter is formed on the substrate 100 side, compared with the case where the color filter is formed on the counter substrate, it is possible to suppress a decrease in the aperture ratio even if a position difference occurs between the counter substrate and the counter substrate. That is, the margin for the position difference of the opposing substrate becomes large.

Fig. 24A is a plan view of the liquid crystal display device shown in Fig. 23; As shown in Fig. 24A, in the liquid crystal display device, a source line driver circuit 152 and a gate line driver circuit 154, which are peripheral driving circuits, are formed around the pixel portion 150. As shown in Figs. A red color filter 130r may be formed on each of the source line driver circuit 152 and the gate line driver circuit 154 . By forming the color filter 130r, photodegradation of the active layer of the thin film transistor included in the source line driver circuit 152 and the gate line driver circuit 154 is prevented, and planarization is achieved.

FIG. 28B is an enlarged view of a part (3×3 matrix) of the pixel unit 150 of FIG. 24A . In the pixel unit 150 , a red color filter 130r, a blue color filter 130b, and a green color filter 130g are alternately arranged in a stripe state. In addition, a red color filter 130r is disposed on the thin film transistor of each pixel.

In addition, since the source wiring (not shown) and the gate wiring (not shown) are arranged so as to overlap the space between the color filters, light leakage is suppressed.

As described above, since the color filter 130r performs the role of the black matrix, the conventionally required process of forming the black matrix may be omitted.

As mentioned above, according to this embodiment, the same effect as 2nd Embodiment - 23rd Embodiment can be acquired. In addition, since the color filters 130r, 130g, and 130b are formed instead of the first interlayer insulating film 107, the number of manufacturing steps of the liquid crystal display can be reduced. Further, in comparison with the case where the color filter is formed on the opposing substrate, even if there is a position difference between the opposing substrate and the opposing substrate, the decrease in the aperture ratio can be suppressed. That is, the margin for the position difference of the opposing substrate becomes large.

In Fig. 23, a color filter is disposed between the gate electrodes 105a and 105b and the source wiring 108, but the present invention is not limited thereto. It may be disposed between the source wiring 108 and the second electrode 112 .

In addition, you may arrange|position not only a color filter but a black matrix.

In addition, an insulating film of an inorganic material may be disposed between the color filter and the source wiring 108 or between the color filter and the second electrode 112 . As the inorganic material, an insulating material containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy: x &gt; y), silicon nitroxide (SiNxOy: x &gt; y), can be used. In order to block the penetration of impurities, it is preferable to use a material containing a lot of nitrogen.

In this way, by disposing the color filter or the black matrix under the second electrode 112, the portion in contact with the liquid crystal or the alignment film can be made flat. By making it flat, alignment disorder of liquid crystal molecules can be suppressed, light leakage can be suppressed, and contrast can be improved.

Further, in the liquid crystal display device of the FFS system or IPS system shown in the third to eighteenth embodiments and the twenty-second embodiment, as in the present embodiment, the first interlayer insulating film 107 or the second interlayer insulating film 111 is ), the color filters 130r, 130b, and 130g may be formed. Also in this case, the same effect as this embodiment can be acquired.

(Embodiment 25)

Fig. 25A is a plan view for explaining the configuration of an FFS type liquid crystal display device according to a twenty-fifth embodiment of the present invention, and Fig. 25B is an enlarged view for explaining the configuration of the pixel portion of Fig. 25A. This embodiment has the same configuration as the twenty-fourth embodiment except for the layout of the color filters 130r, 130b, and 130g. Accordingly, the contents described in the twenty-fourth embodiment are also applicable to the present embodiment. Hereinafter, about the same structural part as 24th Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

In the present embodiment, the color filters 130r, 130b, and 130g are alternately arranged in a matrix state in units of pixels. In detail, the red color filter 130r is formed so as to fill the gap between the blue color filter 130b and the green color filter 130g. In addition, although the color filter 130r is also formed on the source line driver circuit 152 and the gate line driver circuit 154 which are peripheral driver circuits, each of the source line driver circuit 152 and the gate line driver circuit 154 and the pixel portion A color filter 130r is also formed in the space between (150). Accordingly, the occurrence of spaces between the color filter layers is suppressed.

Also according to this embodiment, the same effect as that of the twenty-fourth embodiment can be obtained. Note that, after forming the first interlayer insulating film 107 , the color filters 130r, 130b, and 130g may be formed instead of the second interlayer insulating film 111 . Also in this case, the same effect as this embodiment can be acquired.

Further, in each of the liquid crystal display devices of the FFS system or IPS system shown in the third to eighteenth embodiments and the twenty-third embodiment, as in the present embodiment, the first interlayer insulating film 107 or the second interlayer insulating film ( 111), the color filters 130r, 130b, and 130g may be formed. Also in this case, the same effect as this embodiment can be acquired.

(Embodiment 26)

Fig. 26 is a plan view for explaining the configuration of an FFS-type liquid crystal display device according to a twenty-sixth embodiment of the present invention. The liquid crystal display device according to the present embodiment has the same configuration as that of the twenty-second embodiment, except that the color filters 130r, 130b, and 130g are formed in place of the first interlayer insulating film 107 . The layout of the color filters 130r, 130b, and 130g in the present embodiment is the same as the layout shown in the twenty-fifth embodiment. Accordingly, the content described in the twenty-second embodiment and the content described in the twenty-fifth embodiment are also applicable to the present embodiment. Hereinafter, about the structure similar to 22nd Embodiment, and the structure similar to 25th Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

Also in this embodiment, the same effect as that of the twenty-fifth embodiment can be obtained. Further, in each of the liquid crystal display devices of the FFS system shown in the 19th to 21st embodiments, as in the present embodiment, instead of the first interlayer insulating film 107, the color filters 130r, 130b, 130g are provided. may be formed. Also in this case, the same effect as this embodiment can be acquired.

Note that the layout of the color filters 130r, 130b, and 130g is not limited to the layouts shown in the twenty-third to twenty-fifth embodiments described above, but a triangular mosaic arrangement, an RGBG four-pixel arrangement, an RGBW four-pixel arrangement, etc. You can choose a layout. Moreover, also in these cases, it is preferable to arrange|position the red color filter 130r above the active layer of a thin film transistor.

(Embodiment 27)

27A to 27D are plan views for explaining the shape of the electrodes of the FFS type liquid crystal display device according to the twenty-seventh embodiment of the present invention. Since this embodiment has the same structure as the second embodiment except for the shape of the second electrode 112 , illustration is omitted except for the first electrode 101 and the second electrode 112 .

In FIG. 27A , a plurality of slit-shaped opening patterns 112d and 112e are respectively formed in the second electrode 112 . The opening patterns 112d and 112e are oblique with respect to the source wiring. The opening pattern 112d is formed in the upper half of the second electrode 112 in the figure, and the opening pattern 112e is formed in the lower half of the second electrode 112 in the figure, but the angles are different from each other.

In Fig. 27B, the second electrode 112 has a shape along a circumference, and a plurality of electrodes having different radii are arranged concentrically and connected thereto. And the space between each electrode plays the role of an opening pattern.

In FIG. 27C, the 2nd electrode 112 is arrange|positioned so that two electrodes of a comb-tooth shape may be reversed and the comb-tooth part may be alternated. In addition, the space positioned between the comb-tooth portions serves as an opening pattern.

In Fig. 27D, the second electrode 112 has a comb-tooth shape, and a space between the comb-tooth-shaped portions serves as an opening pattern.

The manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as 2nd Embodiment in any case. Accordingly, the contents described in the second embodiment can be applied to the present embodiment as well.

Also according to this embodiment, the same effect as that of the second embodiment can be obtained. Further, in each of the liquid crystal display devices of the FFS system shown in the third embodiment and the fourth embodiment to the 26th embodiment, the shape of the second electrode 112 is formed as shown in any one of Figs. 27A to 27D. also good

(Embodiment 28)

28A to 28D are plan views for explaining the shape of the electrodes of the IPS system liquid crystal display device according to the twenty-eighth embodiment of the present invention. Since this embodiment has the same configuration as the fourth embodiment except for the shapes of the first electrode 101 and the second electrode 112 , except for the first electrode 101 and the second electrode 112 . , omit the city.

In FIG. 28A , each of the opening pattern 101b of the first electrode 101 and the opening pattern 112f of the second electrode 112 has a broken line shape. The opening pattern 101b is located below and around the area|region where the opening pattern 112f is not formed in the 2nd electrode 112.

In Fig. 28B, the first electrode 101 forms a circular opening pattern 101c in the central portion of the rectangular body portion, and in the opening pattern 101c, a plurality of electrodes having different radii in a shape along the circumference. is arranged concentrically with the opening pattern 101c, and each of the electrodes having a shape along the circumference is connected to the body portion by a single linear electrode. Further, in the second electrode 112, a circular opening pattern 112g is formed in the center of the rectangular body portion, and in the opening pattern 112g, an electrode having a shape along the circumference is concentric with the opening pattern 112g. It has a shape in which the electrode and the body part are connected by a straight electrode. In addition, the number of the electrodes of the shape which follows the circumference|surroundings of the 2nd electrode 112 may be plural.

In addition, since the opening patterns 101c and 112g are concentric with each other, the electrode having a shape along the circumference of the first electrode 101 and the electrode having a shape along the circumference of the second electrode 112 are concentric with each other. . In addition, since the electrode having a shape along the circumference of the first electrode 101 and the electrode having a shape along the circumference of the second electrode 112 have different radii, they are alternately parallel.

In Fig. 28C, in the first electrode 101, a plurality of linear electrodes extending up and down are arranged in parallel with each other in the drawing, and upper and lower ends thereof are respectively linear electrodes extending in the horizontal direction in the drawing. connected shape. Moreover, the 2nd electrode 112 has a comb-tooth shape, and a comb-tooth-shaped part is located in the space between the linear electrodes which comprise the 1st electrode 101. As shown in FIG.

In Fig. 28D, each of the first electrode 101 and the second electrode 112 has a comb-tooth shape, and is disposed opposite to each other. And the comb-tooth-shaped parts are arrange|positioned alternately.

The manufacturing method of the liquid crystal display device which concerns on this embodiment is substantially the same as that of 4th Embodiment in any case. Accordingly, the contents described in the fourth embodiment can be applied to the present embodiment as well.

Also according to this embodiment, the same effect as that of the fourth embodiment can be obtained. Further, in the liquid crystal display device according to the fifth embodiment, the shapes of the first electrode 101 and the second electrode 112 may be those shown in any of FIGS. 28A to 28D.

(Embodiment 29)

Fig. 29 is a circuit diagram for explaining the circuit configuration of a liquid crystal display device according to a twenty-ninth embodiment of the present invention. In the liquid crystal display device according to the present embodiment, a plurality of pixels are arranged in a matrix state. The configuration of each pixel is the same as the pixel of the liquid crystal display device shown in the second to 28th embodiments, except that the second auxiliary wiring 106a extending in the vertical direction in the drawing is formed. am. Accordingly, the contents described in the second to twenty-eighth embodiments are also applicable to the present embodiment. Hereinafter, about the same component as 2nd Embodiment - 28th Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

The second auxiliary wiring 106a is formed on the same layer as the auxiliary wiring 106 and is electrically connected to the auxiliary wiring 106 at each of the portions intersecting the auxiliary wiring 106 .

In addition, the pixel has a capacitor Cs and a capacitor Cls connected to the thin film transistors 121 and 122 . The capacitance Cs is a capacitance formed by the portions of the first electrode 101 and the second electrode 112 where the opening pattern is not formed, and each insulating film positioned therebetween. The capacitance Cls is a capacitance formed by a portion overlapping the opening pattern of the second electrode 112 in the first electrode 101 and a portion located above the first electrode 101 . When these capacities are formed, the holding capacity becomes large.

Also in this embodiment, the same effects as those of the second to twenty-eighth embodiments can be obtained. Also, by forming the second auxiliary wiring 106a, it is easy to keep the potential of the common electrode at the same value in all pixels. In addition, an FFS system may be sufficient as the liquid crystal display device which concerns on this embodiment, and an IPS system may be sufficient as it.

(Embodiment 30)

30A to 30B are circuit diagrams of a liquid crystal display device according to a thirtieth embodiment. The liquid crystal display device according to the present embodiment is a liquid crystal display device of the FFS system or the IPS system, wherein one pixel is constituted by a plurality of (for example, two) sub-pixels. The structure of each sub-pixel is the same as any of the pixels of the liquid crystal display device shown in the second to twenty-eighth embodiments. Accordingly, the contents described in the second to twenty-eighth embodiments are also applicable to the present embodiment. Hereinafter, about the same component as 2nd Embodiment - 28th Embodiment, it shows with the same code|symbol, and abbreviate|omits description.

In the example shown in FIG. 30A , a plurality of sub-pixels constituting the same pixel are electrically connected to the same gate wiring 105 and electrically connected to different source wirings 108 and auxiliary wirings 106 . do. The source wirings 108 are formed in the same number as the number of sub-pixels (two in Fig. 30A) for one pixel column. Accordingly, a different signal may be transmitted for each sub-pixel.

In the example shown in FIG. 30B , a plurality of sub-pixels constituting the same pixel are electrically connected to different gate wirings 105 and electrically connected to the same auxiliary wirings 106 .

Further, each sub-pixel has a capacity Cs and a capacity Cls. Since these capacitances have the same configuration as in the twenty-ninth embodiment, description thereof is omitted.

According to this embodiment, the same effects as those of the second to twenty-eighth embodiments can be obtained. In addition, since one pixel is composed of a plurality of sub-pixels, a viewing angle can be further widened. In addition, the effect that the pixel can have redundancy and the effect that the area gradation display is possible can also be obtained.

(Embodiment 31)

A method of manufacturing a liquid crystal display device according to a thirty-first embodiment will be described with reference to FIGS. 31, 32 and 33 . This embodiment is an example of the manufacturing method of the liquid crystal display device which has the structure shown in 3rd Embodiment. By using this manufacturing method, the degree of freedom of the spacing between the common electrode and the pixel electrode is improved. Since the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode, the size, width, and interval of the opening pattern can be freely set. In addition, the gradient of the electric field added between the electrodes can be controlled, and for example, it is possible to easily increase the electric field in a direction parallel to the substrate. That is, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called horizontal orientation) can be controlled in a direction parallel to the substrate. all. In addition, although the interlayer insulating film has a single-layer structure in Figs. 31, 32 and 33, it may have a two-layer structure.

First, as shown in FIG. 31A , a conductive film having light transmittance is formed on the substrate 800 . The substrate 800 is a glass substrate, a quartz substrate, a substrate formed of an insulating material such as alumina, a plastic substrate, a silicon substrate, or a metal plate having heat resistance capable of withstanding the processing temperature of a subsequent process. Note that the substrate 800 may be a metal such as stainless steel, or a substrate in which an insulating film such as silicon oxide or silicon nitride is formed on the surface of a semiconductor substrate or the like. In addition, when a plastic substrate is used for the substrate 800, a glass transition point such as PC (polycarbonate), PES (polyether sulfone), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) is used. it is preferable

The conductive film is, for example, an ITO film or an Indium Zinc Oxide (IZO) film in which 2 to 20 wt% of zinc oxide (ZnO) is mixed with indium tin oxide or indium oxide containing Si element.

Next, a photoresist film is formed on the conductive film, and the photoresist film is exposed and developed. Accordingly, a resist pattern is formed on the conductive film. Next, the conductive film is etched using this resist pattern as a mask. Accordingly, the first electrode 801 serving as a pixel electrode is formed on the substrate 800 . After that, the resist pattern is removed.

Next, an insulating film 802 is formed on the first electrode 801 and on the substrate 800 . The insulating film 802 is, for example, a silicon oxide film (SiOx) laminated on a silicon nitride (SiNx) film, but other insulating materials (eg, silicon oxynitride (SiOxNy: x&gt;y), or silicon oxynitride (SiNxOy) x&gt;y) may be sufficient.

Here, a nitride film may be formed on the surface of the insulating film 802 by performing a nitridation treatment with a high-density plasma on the surface of the insulating film 802 made of a silicon oxide film, a silicon oxynitride film, or the like.

The high-density plasma is generated, for example, by using a microwave of 2.45 GHz and has an electron density of 1 x 10¹¹ to 1 x 10¹³/cm³ and the electron temperature is 2 eV or less and the ion energy is 5 eV or less. Such high-density plasma has a low kinetic energy of active species, and can form a film with less damage due to plasma and fewer defects compared with conventional plasma processing. The distance from the antenna generating microwaves to the insulating film 802 may be 20 to 80 mm, preferably 20 to 60 mm.

By performing the high-density plasma treatment in a nitrogen atmosphere, for example, an atmosphere containing nitrogen and a rare gas, an atmosphere containing nitrogen and a rare gas, or an atmosphere containing ammonia and a rare gas, the insulating film 802 is ) can be nitrided. Since the nitride film can suppress diffusion of impurities from the substrate 800 and can be formed extremely thin by the high-density plasma treatment, the influence of stress on the semiconductor film formed thereon can be reduced.

Next, as shown in FIG. 31B, a crystalline semiconductor film (for example, a polysilicon film) is formed over the insulating film 802 . Examples of the method for forming the crystalline semiconductor film include a method of directly forming a crystalline semiconductor film on the insulating film 802 , and a method of forming an amorphous semiconductor film on the insulating film 802 and then crystallizing it.

As a method of crystallizing the amorphous semiconductor film, a method of irradiating laser light, a method of crystallization by heating using an element that promotes crystallization of the semiconductor film (for example, a metal element such as nickel), or a method of promoting crystallization of the semiconductor film A method of irradiating a laser beam after crystallization by heating using an element to be used can be used. Of course, a method of thermally crystallizing the amorphous semiconductor film without using the above element may be used. However, the substrate is limited to those that can withstand high temperatures, such as a quartz substrate and a silicon wafer.

When laser irradiation is used, a continuous oscillation type laser beam (CW laser beam) or a pulsed oscillation type laser beam (pulse laser beam) can be used. The laser beams usable here are gas lasers such as Ar laser, Kr laser, and excimer laser, single crystal YAG, YVO4, forsterite (Mg2SiO4), YAlO3, GdVO4, or polycrystalline (ceramic) YAG, Y2O3, YVO4, YAlO3 , a laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper using one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta added as a dopant to GdVO4 as a medium What is oscillated by 1 type or multiple types among a vapor|steam laser and a gold-vapor laser is mentioned. By irradiating the fundamental wave of such a laser beam and the laser beams of the second harmonics to the fourth harmonics of these fundamental waves, crystals of large diameters can be obtained. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd:YVO4 laser (fundamental wave 1064 nm) can be used. At this time, the energy density of the laser is 0.01 to 100 MW/cm² Accuracy (preferably 0.1 to 10 MW/cm²) is required. Then, it is irradiated at a scanning speed of about 10 to 2000 cm/sec.

In addition, single crystal YAG, YVO4, forsterite (Mg2SiO4), YAlO3, GdVO4, or polycrystalline (ceramic) YAG, Y2O3, YVO4, YAlO3, GdVO4 Nd, Yb, Cr, Ti, Ho, Er, Tm as a dopant , each of a laser, Ar ion laser, and Ti: sapphire laser having as a medium one or more of Ta added, can oscillate continuously, and an oscillation frequency of 10 MHz or higher by performing Q switch operation or mode synchronization, etc. Pulse oscillation is also possible. When a laser beam is oscillated with an oscillation frequency of 10 MHz or more, the next pulse is irradiated to the semiconductor film from melting to solidification by the laser. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, since the solid-liquid interface in the semiconductor film can be moved continuously, crystal grains continuously grown in the scanning direction can be obtained.

If ceramic (polycrystalline) is used as the medium, the medium can be formed in a free shape in a short time and at low cost. When a single crystal is used, a columnar medium having a diameter of several mm and a length of several tens of mm is usually used, but when a ceramic is used, a larger medium can be formed.

Since the concentration of dopants such as Nd and Yb in the medium directly contributing to light emission cannot be significantly changed in both the single crystal case and the polycrystal case, there is a certain limit to the improvement of the laser output by increasing the dopant concentration. However, in the case of ceramics, since the size of the medium can be significantly increased compared to single crystals, a significant improvement in laser output can be expected.

Further, in the case of ceramics, it is possible to easily form a medium having a parallelepiped shape or a rectangular parallelepiped shape. In the case of using a medium having such a shape, if the oscillation light is propagated in a zigzag inside the medium, the oscillation optical path can be lengthened. Therefore, the amplification becomes large, and the laser beam can be oscillated with a high power. In addition, since a laser beam extracted from a medium having such a shape has a rectangular shape when emitted, a laser beam having a rectangular cross section is advantageous for shaping into a linear beam compared to a circular beam. In this way, by shaping the emitted laser beam using an optical system, a linear beam having a short side length of 1 mm or less and a long side length of several mm to several m can be easily obtained. In addition, by uniformly irradiating the excitation light to the medium, the energy distribution of the linear beam in the long side direction becomes uniform.

By irradiating this linear beam to the semiconductor film, the entire surface of the semiconductor film can be uniformly annealed. When uniform annealing is required from one end of the linear beam to the other, it is necessary to devise a design such as arranging slits at both ends of the linear beam to shield the energy attenuation portion.

When a semiconductor film is annealed using a linear beam with uniform intensity obtained in this way, and an electronic device is manufactured using this semiconductor film, the characteristic of the electronic device is good and uniform.

As a method for crystallization by heating using an element that promotes crystallization of the amorphous semiconductor film, the technique described in Japanese Patent Laid-Open No. 8-78329 can be used. The technique described in the above publication is to add a metal element that promotes crystallization to an amorphous semiconductor film (also called an amorphous silicon film) and heat treatment to crystallize the amorphous semiconductor film using the addition region as a starting point.

Further, the amorphous semiconductor film can be crystallized by irradiating strong light instead of heat treatment. In this case, any one or a combination of infrared light, visible light, and ultraviolet light may be used, but representatively, from a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp. Use the emitted light. The lamp light source is turned on for 1 to 60 seconds, preferably 30 to 60 seconds, and this lighting is repeated 1 to 10 times, preferably 2 to 6 times. The light emission intensity of the lamp light source is arbitrary, but the semiconductor film is instantaneously heated to about 600 to 1000°C. Further, if necessary, heat treatment for releasing hydrogen contained in the amorphous semiconductor film having an amorphous structure before irradiation with strong light may be performed. Moreover, you may crystallize by performing both heat processing and irradiation using strong light.

After the heat treatment, in order to increase the crystallization rate (the ratio of crystal components in the total volume of the film) of the crystalline semiconductor film and to repair defects remaining in the crystalline particles, laser light is applied to the crystalline semiconductor film in an atmosphere or oxygen atmosphere. may be investigated. As a laser beam, the thing mentioned above can be used.

In addition, it is necessary to remove the added element from the crystalline semiconductor film, and the method thereof will be described below. First, by treating the surface of the crystalline semiconductor film with an ozone-containing aqueous solution (typically, ozone water), a barrier layer made of an oxide film (referred to as a chemical oxide) is formed on the surface of the crystalline semiconductor film to a thickness of 1 to 10 nm. . The barrier layer functions as an etching stopper when selectively removing only the gettering layer in a subsequent step.

Next, on the barrier layer, a gettering layer containing a rare gas element is formed as a gettering site. Here, a semiconductor film containing a rare gas element is formed as a gettering layer by a CVD method or a sputtering method. When forming the gettering layer, sputtering conditions are appropriately adjusted so that a rare gas element is added to the gettering layer. As the rare gas element, one or more selected from helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) is used.

In addition, when a raw material gas containing phosphorus, which is an impurity element, is used, or when a gettering layer is formed using a target containing phosphorus, in addition to gettering with a rare gas element, it is obtained using the Coulomb force of phosphorus. can do turing. In addition, when performing gettering, since a metal element (eg, nickel) tends to move to a region with a high oxygen concentration, the oxygen concentration contained in the gettering layer is, for example, 5 x 10¹⁸/cm^-3 It is preferable to set it above.

Next, the crystalline semiconductor film, the barrier layer and the gettering layer are subjected to heat treatment (for example, heat treatment or treatment for irradiating strong light), and gettering of a metallic element (for example, nickel) is performed, and crystallinity is performed. The metal element in the semiconductor film is reduced in concentration or removed.

Next, by performing a known etching method using the barrier layer as an etching stopper, only the gettering layer is selectively removed. Thereafter, the barrier layer made of the oxide film is removed by, for example, an etchant containing hydrofluoric acid.

Here, in consideration of the threshold characteristics of the fabricated TFT, impurity ions may be doped.

Next, on the crystalline semiconductor film, a photoresist film (not shown) is applied by a coating method, and the photoresist film is exposed and developed. The application method means a spin coating method, a spray method, a screen printing method, a paint method, or the like. In this way, a resist pattern is formed on the crystalline semiconductor film. Next, the crystalline semiconductor film is etched using this resist pattern as a mask. In this way, the crystalline semiconductor film 803 is formed on the insulating film 802 .

Next, after cleaning the surface of the crystalline semiconductor film 803 with an etchant containing hydrofluoric acid or the like, a gate insulating film 804 is formed over the crystalline semiconductor film 803 to a thickness of 10 nm to 200 nm. The gate insulating film 804 is formed of an insulating film containing silicon as a main component, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon oxynitride film, or the like. Moreover, a single layer or a laminated|multilayer film may be sufficient. Further, a gate insulating film 804 is also formed over the insulating film 802 .

Next, as shown in FIG. 31C , after the gate insulating film 804 is cleaned, a first conductive film and a second conductive film are sequentially formed over the gate insulating film 804 . The first conductive film is, for example, a tungsten film, and the second conductive film is a tantalum nitride film.

Next, a photoresist film (not shown) is applied on the second conductive film, and the photoresist film is exposed and developed. In this way, a resist pattern is formed on the second conductive film. Next, using this resist pattern as a mask, the first conductive film and the second conductive film are etched under the first condition, and the second conductive film is etched under the second condition. Accordingly, on the crystalline semiconductor film 803, first gate electrodes 805a, 805b and second gate electrodes 806a, 806b are formed. The first gate electrodes 805a and 805b are spaced apart from each other. The second gate electrode 806a is positioned on the first gate electrode 805a , and the second gate electrode 806b is positioned on the first gate electrode 805b . The inclination angle of each of the side surfaces of the first gate electrodes 805a and 805b is gentler than the inclination angle of the respective side surfaces of the second gate electrodes 806a and 806b.

Further, by this etching process, in the vicinity of the first electrode 801 , the first wiring 807 and the second wiring 808 positioned above the first wiring 807 are formed. Here, it is preferable that each of the gate electrodes and the respective wirings are conducted so that the corners are rounded when viewed from a direction perpendicular to the substrate 800 . By rounding the corners, it is possible to prevent dust or the like from remaining at the corners of the wiring, suppress defects caused by dust, and improve the yield. After that, the photoresist film is removed.

Next, as shown in FIG. 31D , the crystalline semiconductor film 803 of the first conductivity type (for example, n type) impurity element (for example, phosphorus) is implanted. Accordingly, in the crystalline semiconductor film 803, first impurity regions 810a, 810b, and 810c are formed. The first impurity region 810a is located in a region serving as a source of the thin film transistor, and the first impurity region 810c is located in a region serving as a drain of the thin film transistor. The first impurity region 810b is positioned between the first gate electrodes 805a and 805b.

Next, as shown in FIG. 31E, a photoresist film is applied so as to cover each of the first gate electrodes 805a and 805b and the second gate electrodes 806a and 806b, and the photoresist film is exposed and developed. Accordingly, the upper surfaces and the periphery of each of the first gate electrode 805a and the second gate electrode 806a, and the upper surfaces and the periphery of each of the first gate electrode 805b and the second gate electrode 806b, It is covered with resist patterns 812a and 812b. Next, an impurity element 811 (for example, phosphorus) of the first conductivity type is implanted into the crystalline semiconductor film 803 using the resist patterns 812a and 812b as masks. Accordingly, an impurity element 811 of the first conductivity type is again implanted into a portion of each of the first impurity regions 810a, 810b, and 810c, and second impurity regions 813a, 813b, and 813c are formed. The remaining portions of each of the first impurity regions 810a, 810b, and 810c remain as third impurity regions 814a, 814b, and 814c.

Thereafter, as shown in Fig. 32A, the resist patterns 812a and 812b are removed. Next, an insulating film (not shown) substantially covering the entire surface is formed. This insulating film is, for example, a silicon oxide film, and is formed by plasma CVD.

Next, heat treatment is performed on the crystalline semiconductor film 803, and the impurity element added thereto is activated. This heat treatment is a high-speed thermal annealing method (RTA method) using a lamp light source, a method of irradiating a YAG laser or an excimer laser from the back side, a heat treatment using a furnace, and a combination of a plurality of these methods processing according to the established method.

By the above-described heat treatment, both when the impurity element is activated and at the same time as the element used as a catalyst when the crystalline semiconductor film 803 is crystallized (for example, a metal element such as nickel) has a high concentration of impurities (for example, . Accordingly, the off current value of the TFT is low, and high field effect mobility can be obtained. In this way, a TFT having good characteristics can be obtained.

Next, an insulating film 815 is formed so as to cover the crystalline semiconductor film 803 . The insulating film 815 is, for example, a silicon nitride film, and is formed by plasma CVD. Next, on the insulating film 815 , a planarization film of the interlayer insulating film 816 is formed. As the interlayer insulating film 816, an inorganic material having light-transmitting properties (silicon oxide, silicon nitride, silicon nitride containing oxygen, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimideamide, resist, or the like); benzocyclobutene) Also, a lamination of these and the like are used. In addition, as another light-transmitting film used for the planarization film, an insulating film made of an SiOx film containing an alkyl group obtained by a coating method, for example, silica glass, alkylsiloxane polymer, alkylsilsesquioxane polymer, hydrogenated silsesquioxane. An insulating film formed using a polymer, a hydrogenated alkylsilsesquioxane polymer, or the like can be used. Examples of the siloxane-based polymer include PSB-Kl and PSB-K31 (manufactured by Toray) as coating insulating film materials and ZRS-5PH (product of Catalysts &amp; Chemicals) as coating insulating film materials. The interlayer insulating film 816 may be a single-layer film or a multi-layer film.

Next, a photoresist film (not shown) is applied over the interlayer insulating film 816, and the photoresist film is exposed and developed. With this, a resist pattern is formed on the interlayer insulating film 816 . Next, using this resist pattern as a mask, the interlayer insulating film 816, the insulating film 815, and the gate insulating film 804 are etched. Accordingly, connection holes 817a, 817b, 817c, and 817d are formed in the interlayer insulating film 816, the insulating film 815, and the gate insulating film 804. As shown in FIG. The connection hole 817a is located on the second impurity region 813a that is the source of the transistor, and the connection hole 817b is located on the second impurity region 813c that is the drain of the transistor. The connection hole 817c is located on the first electrode 801 , and the connection hole 817d is located on the second wiring 808 . After that, the resist pattern is removed.

Next, as shown in Fig. 32B, a first conductive film 818 is formed in each of the connection holes 817a to 817d and over the interlayer insulating film 816. As shown in Figs. The first conductive film 818 is a light-transmitting conductive film, for example, an ITO film, indium tin oxide containing Si element, or a target obtained by mixing 2 to 20 wt% of zinc oxide (ZnO) with indium oxide. It is an IZO (Indium Zinc Oxide) film formed using Next, a second conductive film 819 is formed on the first conductive film 818 . The second conductive film 819 is, for example, a metal film.

Next, a photoresist film 820 is coated on the second conductive film 819 . Next, a reticle 840 is disposed on the photoresist layer 820 . The reticle 840 forms semi-permeable film patterns 842a, 842b, 842c, and 842d on a glass substrate, and also forms light-shielding patterns 841a, 841b, 841c on a portion of each of the semi-permeable film patterns 842a, 842b, 842c, and 842d. ) was formed. The semi-permeable film pattern 842a and the light-shielding pattern 841a are located above the connection hole 817a, and the semi-permeable film pattern 842b and the light-shielding pattern 841b are located above the connection hole 817b and the connection hole 817c, The semipermeable film pattern 842c and the light blocking pattern 841c are located above the connection hole 817d, and the semipermeable pattern 842d is located above the first electrode 801 .

Next, the photoresist layer 820 is exposed using the reticle 840 as a mask. Accordingly, the photoresist layer 820 includes a portion positioned below the light blocking patterns 841a, 841b, and 841c, the semi-transmissive layer patterns 842a, 842b, 842c, and 842d, and the light blocking patterns 841a, 841b, and 841c. It is below the non-overlapping portion and is exposed to light except for the lower layer portion located in the vicinity of the second conductive film 819 . Further, portions that are not photosensitized are denoted by reference numerals 821a, 821b, 821c, and 821d.

Next, as shown in Fig. 32C, the photoresist film 820 is developed. Accordingly, the photosensitive portion of the photoresist film 820 is removed, and resist patterns 822a, 822b, 822c, and 822d are formed. The resist pattern 822a is located above the connection hole 817a. The resist pattern 822b is located above each of the connection holes 817b and 817c and between them. The resist pattern 822d is positioned above the first electrode 801 . In the resist pattern 822c, portions other than above the connection hole 817d and the resist pattern 822d are thinner than other resist patterns.

Next, as shown in FIG. 32D, the first conductive film 818 and the second conductive film 819 are etched using the resist patterns 822a, 822b, 822c, and 822d as a mask. Accordingly, in the regions not covered with the resist patterns 822a, 822b, 822c, 822d, the first conductive film 818 and the second conductive film 819 are removed.

In addition, since the resist patterns 822a, 822b, 822c, and 822d are also gradually etched, a thin portion of the resist pattern (specifically, a portion of the resist pattern 822c other than above the connection hole 817d) is etched during the etching process. , and the resist pattern 822d) are removed. Accordingly, in the portion of the resist pattern 822c other than above the connection hole 817d and in the region positioned below each of the resist patterns 822d, the second conductive film 819 is removed, and the first conductive film Only (818) remains. Thereafter, the resist patterns 822a, 822b, and 822c are removed.

In this way, by one resist pattern and one etching process, the source wirings 823a and 824a, the drain wirings 823b and 824b, the conductive film for connection 824c, and the second electrode 828 serving as a common electrode are used. this is formed The source wirings 823a and 824a and the drain wirings 823b and 824b are each impurity region formed in the crystalline semiconductor film 803, the gate insulating film 804, the first gate electrodes 805a, 805b, and the second gate electrode. Together with the 806a and 806b, a thin film transistor 825 is formed. Further, the drain wirings 823b and 824b electrically connect the impurity region 813c serving as the drain to the first electrode 801 . The second electrode 828 is electrically connected to the second wiring 808 by partially filling the connection hole 817d. The conductive film 824c for connection is located on the second electrode 828 located on the connection hole 817d.

Thereafter, a first alignment layer 826 is formed. In this way, an active matrix substrate is formed. Further, by the processing shown in Figs. 31A to 32D, thin film transistors 827 and 829 (shown in Fig. 33B) are also formed in the gate signal line driver circuit region 854 of the liquid crystal display device shown in Figs. 33A to 33B. . Further, by the processing shown in Figs. 31B to 31D, a first terminal electrode 838a and a second terminal electrode 838b (shown in Fig. 33B) for connecting the active matrix substrate and the outside are formed.

Thereafter, an organic resin film such as an acrylic resin film is formed on the active matrix substrate, and the organic resin film is selectively removed by etching using a resist pattern, as shown in the plan view of Fig. 33A and the KL cross-sectional view of Fig. 33B. As a result, columnar spacers 833 are formed on the active matrix substrate. Next, after the sealing material 834 is formed in the sealing area 853, liquid crystal is dripped onto the active matrix substrate. Before dripping a liquid crystal, you may form the protective film which prevents that a sealing material and a liquid crystal react on a sealing material.

Thereafter, a counter substrate 830 on which a color filter 832 and a second alignment film 831 are formed is disposed at a position facing the active matrix substrate, and the two substrates are bonded with a sealing material 834 . At this time, the active matrix substrate and the counter substrate 830 are attached to each other while maintaining a uniform distance by the spacers 833 . Next, a sealing material (not shown) is used to completely seal between both substrates. In this way, the liquid crystal is sealed between the active matrix substrate and the counter substrate.

Next, the active matrix substrate, the opposing substrate, or both substrates are divided into desired shapes as needed. Further, polarizing plates 835a and 835b are formed. Next, a flexible printed circuit (hereinafter, referred to as FPC) 837 is connected to the second terminal electrode 838b disposed in the external terminal connection region 852 through the anisotropic conductive film 836 .

In this way, the structure of the formed liquid crystal module is demonstrated below. In the central portion of the active matrix substrate, a pixel region 856 is disposed. A plurality of pixels are formed in the pixel region 856 . In Fig. 33A, a gate signal line driver circuit region 854 for driving a gate signal line is disposed above and below the pixel region 856, respectively. Further, in a region located between the pixel region 856 and the FPC 837, a source signal line driver circuit region 857 for driving the source signal line is disposed. The gate signal line driver circuit region 854 may be disposed only on one side, and may be appropriately selected by the designer in consideration of the substrate size and the like in the liquid crystal module. However, in consideration of operational reliability and driving efficiency of the circuit, it is preferable that the pixel regions 856 are interposed and arranged symmetrically. Then, signals are input to the respective driving circuits from the FPC 837 .

Also in this embodiment, the same effect as 3rd embodiment can be acquired.

(Embodiment 32)

A liquid crystal module according to a thirty-second embodiment will be described using angles in Figs. 34A to 35B. In each figure, the configuration of the pixel portion 930 is the same as that of the pixel region 856 shown in the thirty-first embodiment, and a plurality of pixels are formed on the substrate 100 .

FIG. 34A is a schematic plan view of a liquid crystal display module, and FIG. 34B is a diagram for explaining the circuit configuration of the source driver 910 . In the example shown in FIGS. 34A to 34B , both the gate driver 920 and the source driver 910 are integrally formed on the same substrate 100 as the pixel portion 930 as shown in FIG. 34A . As shown in Fig. 34B, the source driver 910 includes a plurality of thin film transistors 912 that control which source signal line an input video signal is transmitted to, and a shift register 911 that controls the plurality of thin film transistors 912. ) has

35A is a schematic plan view of a liquid crystal display module, and FIG. 35B is a diagram for explaining a circuit configuration of a source driver. In the example shown in FIG. 35 , as shown in FIG. 35A , the source driver includes a thin film transistor group 940 formed on the substrate 100 and an IC 950 separate from the substrate 100 . The IC 950 and the thin film transistor group 940 are electrically connected by, for example, an FPC 960 .

The IC 950 is formed using, for example, a single crystal silicon substrate, controls the thin film transistor group 940 , and inputs a video signal to the thin film transistor group 940 . The thin film transistor group 940 controls which source signal line a video signal is transmitted to, based on the control signal from the IC 950 .

Also in the liquid crystal display module according to the thirty-second embodiment, the same effects as those of the third embodiment can be obtained.

(Embodiment 33)

38A to 38B are cross-sectional views for explaining the configuration of a light emitting device using the present invention. In this embodiment, the example in which the structure of this invention and the self-light emitting element (EL element etc.) were combined is shown.

Fig. 38A is an example of a light-emitting device in which the configuration of the present invention is combined with a thin-film EL element. A thin-film EL device has a light-emitting layer made of a thin film of a light-emitting material, and can obtain light emission by collision excitation of a light-emitting center or a parent material by electrons accelerated by a high electric field.

As a mechanism of light emission, donor-acceptor recombination type light emission using a donor level and an acceptor level, and localized type light emission using metal ion inner-shell electron transition are known. In general, there are many cases of localized light emission in thin film EL devices and donor-acceptor recombination type light emission in distributed EL devices.

A specific structure is shown below. Fig. 38A shows a configuration using a top-gate thin film transistor 221 and is close to the liquid crystal display device according to the first embodiment in that the first electrode 201 and the second electrode 212 are used. becomes the composition. That is, the first electrode 201 is formed on the substrate 200 , the insulating film 202 is formed on the substrate 200 and on the first electrode 201 , and the thin film transistor 221 is formed on the insulating film 202 . do. In addition, interlayer insulating films 206 and 207 are formed on the thin film transistor 221 , and the second electrode 212 is formed on the interlayer insulating film 207 . A slit is formed in the second electrode 212 . In addition, a slit may be formed in the first electrode 201 as well. In this embodiment, the layer 214 containing the light emitting material is formed above the second electrode 212 .

In the same process as in the second embodiment, the substrate 200, the first electrode 201, the insulating film 202, the thin film transistor 221, the interlayer insulating films 206 and 207, and the second electrode 212 are formed. Next, the dielectric 213 may be formed on the second electrode 212 , and the layer 214 containing the light emitting material may be formed on the dielectric 213 . However, it is not limited to the above configuration, and the dielectric 213 is not necessarily formed. When the dielectric 213 is not formed, the interlayer insulating films 206 and 207 function as dielectrics. In addition, the second substrate 220 is disposed on the layer 214 including the light emitting material with the protective layer 215 interposed therebetween.

The luminescent material consists of a base material and a luminescent center. Manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), Seodymium (Pr) or the like can be used. Further, as charge compensation, a halogen element such as fluorine (F) or chlorine (Cl) may be added.

As the light emitting core of the donor-acceptor recombination type light emission, a light emitting material containing a first impurity element forming a donor level and a second impurity element forming an acceptor level can be used. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), etc. can be used, and as the second impurity element, for example, copper (Cu), silver (Ag), etc. can be used

As a base material used for a light emitting material, a sulfide, an oxide, and a nitride can be used. Examples of the sulfide include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y2S3), gallium sulfide (Ga2S3), strontium sulfide (SrS), barium sulfide (BaS), and the like. It can be used, and as an oxide, zinc oxide (ZnO), yttrium oxide (Y2O3), etc. can be used, for example.

Moreover, as a nitride, aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), etc. can also be used, for example. In addition, zinc selenide (ZnSe), zinc telluride (ZnTe), etc. can also be used, and it may be a ternary mixed crystal such as calcium sulfide-gallium (CaGa2S4), strontium sulfide-gallium (SrGa2S4), or barium sulfide-gallium (BaGa2S4). good. What is necessary is just to combine these base materials and a light emitting center suitably, and what is necessary is just to make a light emitting material.

There are many cases of localized light emission in the thin film type EL device, and the donor-acceptor recombination type light emission in the distributed type EL device. In the case of the configuration shown in Fig. 38A, it is preferable to use a light emitting center for local light emission to form a light emitting material (eg, ZnS: Mn, ZnS: Cu, Cl, etc.).

Next, Fig. 38B shows an example of a light emitting device in which the configuration of the present invention and a distributed EL element are combined. A dispersion type EL device has a light emitting layer in which particles of a light emitting material are dispersed in a binder, and, at the same time as a thin film type EL device, light emission can be obtained by collision excitation of a light emitting center or a parent material by electrons accelerated by a high electric field. In the case of a dispersion type EL device, a layer 224 containing a light emitting material is formed in contact with the second electrode 212 .

As the light-emitting material to be dispersed in the binder, the above-mentioned light-emitting material as in the thin-film EL device can be used. Further, in the case of a dispersed EL device, it is preferable to use a light emitting center made of donor-acceptor recombination type light emission to form a light emitting material (eg, ZnS: Ag, Cl, ZnS: Cu, Al, etc.). The light emitting material is not limited to the inorganic material described above, and an organic light emitting material (eg, rubrene, 9,10-diphenylanthracene, etc.) may be used.

As the binder usable for the dispersion type EL device, an organic material or an inorganic material may be used, or a mixed material of an organic material and an inorganic material may be used. As the organic material, a polymer having a relatively high dielectric constant, such as a cyanoethyl cellulose-based resin, or a resin such as polyethylene, polypropylene, polystyrene-based resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Moreover, you may use heat resistant polymers, such as aromatic polyamide and polybenzimidazole, or a siloxane resin.

Resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolak resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used, and further, A photocurable resin or the like can be used. In addition, the dielectric constant may be adjusted by appropriately mixing fine particles of high dielectric constant such as barium titanate (BaTiO3) or strontium titanate (SrTiO3) with these resins.

In addition, as an inorganic material used for the binder, silicon oxide (SiOx), silicon nitride (SiNx), silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, or aluminum oxide (Al2O3), Titanium oxide (TiO2), BaTiO3, SrTiO3, lead titanate (PbTiO3), potassium niobate (KNbO3), lead niobate (PbNbO3), tantalum oxide (Ta2O5), barium tantalate (BaTa2O6), lithium tantalate (LiTaO3), oxide It can be formed of a material selected from materials including yttrium (Y2O3), zirconium oxide (ZrO2), ZnS, and other inorganic materials. By including (addition, etc.) an inorganic material having a high dielectric constant as the organic material, the dielectric constant of the layer including the semi-luminous material and the light emitting material serving as the binder can be controlled, and the dielectric constant can be further increased.

In addition, although the EL element can obtain light emission by applying a voltage between a pair of electrode layers, in this embodiment, it is preferable to use an alternating current drive. In the EL light emitting element shown in the present embodiment, it is to emit light by using the electric field generated by the first electrode 201 and the second electrode 212 . In addition, the electric field generated for light emission is the same as the electric field in the liquid crystal display device demonstrated in the other embodiment.

As shown in this embodiment, the space|interval between electrodes can be controlled by forming an insulating film on the 1st electrode. For example, as the configuration shown in the present embodiment, by controlling the distance between the electrodes, it becomes possible to obtain a microcavity effect between the first electrode and the second electrode, and light emission with good color purity device can be crafted.

As described above, the scope of application of the present invention is extremely wide, and it can be used for electronic devices in various fields.

In addition, this invention is not limited to the above-mentioned embodiment, It can implement with various changes within the range which does not deviate from the meaning of this invention.

(Embodiment 34)

An electronic device according to a thirty-fourth embodiment of the present invention will be described with reference to Figs. 36A to 36H. These electronic devices are equipped with the display device or display module shown in any one of the above embodiments.

As these electronic devices, cameras such as video cameras and digital cameras, goggle-type displays (head mounted displays), navigation systems, sound reproduction devices (car audio, audio combos, etc.), notebook personal computers, game devices, and portable information terminals (mobile computer, cell phone, electronic book, etc.), an image reproducing apparatus equipped with a recording medium (representatively, an apparatus having a display capable of reproducing a recording medium such as DVD: Digital Versatile Disc and displaying the image), etc. can be heard Specific examples of these electronic devices are shown in Figs. 36A to 36H.

Fig. 36A is a monitor of a television receiver or a personal computer. It includes a housing 2001, a support unit 2002, a display unit 2003, a speaker unit 2004, a video input terminal 2005, and the like. For the display unit 2003, the display device or display module shown in any of the above embodiments is used. By having this display device or display module, the degree of freedom of the distance between the pixel electrode and the common electrode is improved. Since the optimum value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode, the size, width and interval of the opening pattern can be freely arranged. In addition, the gradient of the electric field applied between the electrodes can be controlled, for example, it is possible to easily increase the electric field in a direction parallel to the substrate. In particular, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called vertical alignment) can be controlled in a direction parallel to the substrate, so by applying an optimal electric field, the viewing angle is widened. all. Further, when a part of the pixel electrode having the same potential as the one side is disposed under the drain or source of the thin film transistor, the potential of the drain or source is stable. As a result, the gap between the opening patterns of the electrode can be narrowed, and the method of applying the electric field becomes smooth, so that the liquid crystal molecules can be easily controlled. Moreover, since the voltage can be made small by narrowing the space|interval of an opening pattern, power consumption can also be made small.

Fig. 36B is a digital camera. A receiving portion 2103 is provided on the front portion of the main body 2101 , and a release button 2106 is provided on the upper surface portion of the main body 2101 . In addition, a display portion 2102 , an operation key 2104 , and an external connection port 2105 are provided on the rear surface of the main body 2101 . For the display unit 2102, the display device or display module shown in any of the above embodiments is used. By having this display device or display module, the same effect as the above-described embodiment can be obtained. For example, the degree of freedom of the distance between the pixel electrode and the common electrode is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. can Then, the gradient of the electric field applied between the electrodes can be controlled, and for example, it is possible to easily increase the electric field in the direction parallel to the substrate. In particular, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called vertical orientation) can be controlled in a direction parallel to the substrate, so a liquid crystal display device or liquid crystal module having a wide viewing angle provide products.

Fig. 36C is a notebook-type personal computer. A keyboard 2204 , an external connection port 2205 , and a pointing device 2206 are formed in the main body 2201 . Further, a housing 2202 having a display portion 2203 is formed in the main body 2201 . For the display unit 2203, the display device or display module shown in any of the above-described embodiments is used. By having this display device or display module, the same effect as the above-described embodiment can be obtained. For example, the degree of freedom of the distance between the pixel electrode and the common electrode is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. can Then, the gradient of the electric field applied between the electrodes can be controlled, and for example, it is possible to easily increase the electric field in a direction parallel to the temporary plate. In particular, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called vertical orientation) can be controlled in a direction parallel to the substrate, so a liquid crystal display device or liquid crystal module having a wide viewing angle provide products.

Fig. 36D is a mobile computer, and includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. In the display portion 2302, the display device or display module shown in any of the above-described embodiments is formed. For the display portion 2302, the display device or display module shown in any of the above-described embodiments is used. By having this display device or display module, the same effect as the above-described embodiment can be obtained. For example, the degree of freedom of the distance between the pixel electrode and the common electrode is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. can Then, the gradient of the electric field applied between the electrodes can be controlled, and for example, it is possible to easily increase the electric field in the direction parallel to the substrate. In particular, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called vertical orientation) can be controlled in a direction parallel to the substrate, so a liquid crystal display device or liquid crystal module having a wide viewing angle provide products.

Fig. 36E is an image reproducing apparatus. In the main body 2401, a display portion 2404, a recording medium reading portion 2405 and operation keys 2406 are formed. Further, in the main body 2401, a case 2402 having a speaker unit 2407 and a display unit 2403 is provided. For each of the display portion 2403 and the display portion 2404, the display device or display module shown in any of the above-described embodiments is used. By having this display device or display module, the same effect as the above-described embodiment can be obtained. For example, the degree of freedom of the distance between the pixel electrode and the common electrode is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. have. Then, the gradient of the electric field applied between the electrodes can be controlled, and for example, it is possible to easily increase the electric field in the direction parallel to the substrate. In particular, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called vertical orientation) can be controlled in a direction parallel to the substrate, so a liquid crystal display device or liquid crystal module having a wide viewing angle provide products.

36F is an electronic book. The main body 2501 is provided with an operation key 2503 . In addition, a plurality of display units 2502 are attached to the main body 2501 . For the display unit 2502, the display device or display module shown in any of the above embodiments is used. By having this display device or display module, the same effect as the above-described embodiment can be obtained. For example, the degree of freedom of the distance between the pixel electrode and the common electrode is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. have. Then, the gradient of the electric field applied between the electrodes can be controlled, and for example, it is possible to easily increase the electric field in the direction parallel to the substrate. In particular, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called vertical orientation) can be controlled in a direction parallel to the substrate, so a liquid crystal display device or liquid crystal module having a wide viewing angle provide products.

36G is a video camera, and the main body 2601 includes an external connection port 2604, a remote control receiver 2605, a receiver 2606, a battery 2607, an audio input unit 2608, an operation key 2609, and An eyepiece 2610 is provided. Further, a housing 2603 having a display portion 2602 is attached to the main body 2601 . For the display unit 2602, the display device or display module shown in any of the above embodiments is used. By having this display device or display module, the same effect as the above-described embodiment can be obtained. For example, the degree of freedom of the distance between the pixel electrode and the common electrode is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. have. Then, the gradient of the electric field applied between the electrodes can be controlled, and for example, it is possible to easily increase the electric field in the direction parallel to the substrate. In particular, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called vertical orientation) can be controlled in a direction parallel to the substrate, so a liquid crystal display device or liquid crystal module having a wide viewing angle provide products.

Fig. 36H is a mobile phone showing a main body 2701, a housing 2702, a display unit 2703, an audio input unit 2704, an audio output unit 2705, operation keys 2706, an external connection port 2707, an antenna ( 2708) and the like. For the display portion 2703, the display device or display module shown in any of the above embodiments is used. By having this display device or display module, the same effect as the above-described embodiment can be obtained. For example, the degree of freedom of the distance between the pixel electrode and the common electrode is improved. As a result, the optimal value of the arrangement interval of the opening pattern of the pixel electrode and the width of the opening pattern varies depending on the distance between the pixel electrode and the common electrode. have. Then, the gradient of the electric field applied between the electrodes can be controlled, and for example, it is possible to easily increase the electric field in the direction parallel to the substrate. In particular, in a display device using liquid crystal, liquid crystal molecules oriented parallel to the substrate (so-called vertical orientation) can be controlled in a direction parallel to the substrate, so a liquid crystal display device or liquid crystal module having a wide viewing angle provide products.

100: substrate 101: electrode 102: insulating film 103: semiconductor film 103a: impurity region 103b: impurity region 103c: channel region 104: gate insulating film 105: gate wiring 105a: gate electrode 105b: gate electrode 106: auxiliary wiring 107: interlayer insulating film 108: source wiring 109: conductive film for connection 110: conductive film for connection 111: interlayer insulating film 112: electrode 112a: opening pattern 112b: opening pattern 113: alignment layer 114: liquid crystal 115: alignment layer 116: color filter 118: polarizing plate 119: polarizing plate 120: counter substrate 121: thin film transistor