Process for semiconductor nanostructures obtaining
Abstract
The invention relates to semiconductor technology, in particular to methods of obtaining semiconductor nanostructures. The process of obtaining semiconductor nanostructures consists in the fact that on one side of a semiconductor crystal, by photolithography, a mask is deposited, electrochemically corroded and removed the mask. The novelty is that after the mask is removed, electrochemical corrosion by light irradiation is performed, the quantum energy of which is higher than the value of the forbidden band of the semiconductor.
Term
No projected expiry on record.
- Priority and filed
- Granted
- Today
1 claim: 1 independent, 0 dependent
- 1Method of obtaining the semiconductor nanostructures, which consists in the fact that one of the semiconductor crystal beams, by photolithography, is deposited, corrodes electro5 chemistry and removes the mask, characterized in that after the mask is removed, the corrosion is carried out further. electrochemically by irradiation with lurnine, the energy of the quantities of which is greater than the value of the forbidden band of the semiconductor. Procedeu de obfinere a nanostructurilor semiconductoare, care constă in faptul că pe una din fefele unui cristal de semiconductor, prin fotolitografie, se depune о rnască, se corodează electro5 chimie și se înlătură masca, caracterizat prin aceea câ după înlăturarea măștii, se efectuează suplimentar corodarea electrochimică prin iradierea cu lurnină, energia cuantelor cărei este mai mare decat valoarea benzii interzise a semiconductorului.
11 paragraphs, as filed
Invenfia refer! in semiconductor technology, especially in semiconductor nanostructure processes.
The process of obtaining semiconductor structures using interferometry and holography is known [1].
The disadvantage of this process is the impossibility to obtain nanostructures with dimensions smaller than о percent! two nanometers.
To obtain nanostructures with dimensions smaller than о percent! of nanometers is applied known microscopic tunneling procedure [2] and electron beam lithography [3].
The disadvantage of these procedures is the high cost.
The problem of invention is const! in obtaining semiconductor nanostructures with dimensions below 100 nm, at a reduced pref.
The essence of invention is const! in the fact that! on one of the beams of a semiconductor crystal, by photolithography, it is deposited, corroded! electrochemically and it is inl! the mask. The novelty of the invention consists! in the fact that! after! the removal you know, it is done! additional electrochemical corrosion! by irradiation with light, the energy of the quantities is greater than the value of the forbidden band of the semiconductor.
The result of the invention is const! in that c! using the о method! cheap !, you get the nanostructure! semiconductor, the longitudinal dimensions of the chain are determined by the ridge, and the transverse dimensions are determined by the thickness of the load region! spatial! of the semiconductor, which can be below 100 nm.
Example of carrying out the invention.
On the surface of a GaP semi-insulator support with an n-GaP layer with equal electron concentration! with IxlO<sup>18</sup> cm '<sup>3</sup> the temperature! of earner!, using photolithography, it is deposited! of polymethyl methacrylate (PMMA) photoresist, covering! selectively the surface of the semiconductor. It pickles! electrochemically in ο 0.5 MH solution<sub>2</sub>SO<sub>4</sub>/ H<sub>2</sub>One at the potential difference of 5 V up! upon removing the η-GaP layer from the uncoated surface! of rnasc !. It is removed! PMMA mask. Subsequently the sample is subjected to electrochemical pickling in ο 0.5 MH solution<sub>2</sub>SO<sub>4</sub>/ H<sub>2</sub>One at the potential difference of 5 V, with the illumination from the о lamp! with Xenon with 200W power
As a result, the surface of the GaP semi-insulating substrate is obtained at the temperature of the earner! о structure! of η-GaP strips with transverse dimensions of 20 nm.
Every citation, both waysCites: the store holds 2 of 3
| Document | Relation | Office | Cited during |
|---|---|---|---|
| MD3811G2 | Cited by | Republic of Moldova | Search report |
| MD249Z | Cited by | Republic of Moldova | Search report |
| MD193Z | Cited by | Republic of Moldova | Search report |
| MD152Z | Cited by | Republic of Moldova | Search report |
| US6709880B2 | Cites | United States of America | Search report |
| US6709880B2 | Cites | United States of America | Search report |
2 members in 1 office
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 20040138 | Republic of Moldova | A | |
| MD20040000138 | – | – | – |
Members2
| Document | Office | Kind | |
|---|---|---|---|
| MD2556F1 | Republic of Moldova | F1 | |
| MD2556G2This record | Republic of Moldova | G2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Patent for invention definitely lapsed due to non-payment of feesLapsedMM4A | MM4A |
Numbers
- Publication
- 0000002556
- Publication, DOCDB
- 2556
- Publication, EPODOC
- MD2556G
- Application
- 138
- Application, DOCDB
- 20040138
- Application, EPODOC
- MD20040000138
Titles3
- English
- Process for semiconductor nanostructures obtaining
- Romanian
- Procedeu de obtinere a nanostructurilor semiconductoare
- Russian
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