Film precursor tray for use in film precursor evaporation system and method of using the same

The present invention relates to a system for film formation, and more particularly to a system that evaporates a film precursor and supplies a gas phase to the film formation chamber.

This application is a partial continuation of each of the following US patent applications: No. 11/007961 filed in September 2004, No. 11/007965 filed in September 2004, November 29, 2004. Issue 10/998420 filed on the same day. All of these are explicitly incorporated as references of the present application.

U.S. Patent Application No. 11/007961 is a partial continuation of U.S. Patent Application No. 10/998420 filed on November 29, 2004, and U.S. Patent Application No. 11/007962 is November 2004. It is a partial continuation of US Patent Application No. 10/998420 filed on the 29th, all of which are expressly incorporated as references in this application.

This application relates to U.S. Patent Application No. 11/35159, entitled "Thin Film Precursor Deposition System and Its Usage," filed on the same day as Express Delivery EV488818447US, which is a reference to this application. Is clearly incorporated as.

When installing copper (Cu) metal in a multilayer metallized structure to manufacture integrated circuits, a diffusion barrier / liner is used to improve the adhesion and growth of the Cu layer into a Cu dielectric material. It is necessary to prevent the spread of copper. Barriers / liners deposited on dielectric materials may contain refractory materials that are non-reactive and immiscible to Cu, such as tungsten (W), molybdenum (Mo) and tantalum (Ta). Well, this can reduce the electrical resistance. Current integrated structures that integrate metallized Cu and dielectric materials require a barrier / liner film formation process at substrate temperatures between about 400 ° C and about 500 ° C or lower.

For example, in the current Cu integration method for node technology of 130 nm or less, a low dielectric constant (low k) interlayer dielectric is used, and then the TaN layer and Ta barrier layer are formed by physical vapor deposition (PVD). In addition, a Cu seed layer is deposited with PVD and an electrochemical deposition (ECD) Cu fill is installed. In general, Ta layers are selected by their adhesion (ie, their adhesion to low k films), and in general, Ta / TaN layers are their barrier properties (ie, diffusion of Cu into low k films). Selected by their protection against).

As mentioned above, vigorous efforts have been made to study and implement thin film transition metal layers such as Cu diffusion barriers, which include materials such as chromium, tantalum, molybdenum and tungsten. Is done. Each of these materials exhibits low miscibility with respect to Cu. Recently, other materials such as ruthenium (Ru) and rhodium (Rh) have been found as potential barrier layers. This is because these materials are expected to behave similarly to conventional heat-resistant materials.

<p> In the present invention, a highly conductive multi-tray film precursor evaporation system coupled to a highly conductive gas phase supply system (40) to improve the film formation rate by increasing the exposed surface area of the film precursor. The challenge is to provide.</p>

<p> In one embodiment of the present invention, a system for forming a thin film from a film precursor is provided.</p><p> In another embodiment of the invention, a membrane precursor evaporation system is provided.</p><p> Yet another embodiment of the invention provides methods and systems for forming metal films from solid metal precursors at high speed.</p><p> In yet another embodiment, an interchangeable membrane precursor support assembly is proposed, which supports the membrane precursor in a membrane precursor evaporation system and allows one or more additional stacks. The membrane precursor evaporation system has a replaceable tray configured to be laminated with a tray, the membrane precursor evaporative system has a container having an outer wall and a bottom and a lid configured to hermetically bond to the container. The lid has an outlet configured to be hermetically coupled to the thin film deposition system, and the replaceable tray has an inner end and an outer end, between which the said. The membrane precursor is retained, one of the ends is stackable, has one or more tray openings formed at the stackable end, and the replaceable tray provides carrier gas. Carrier gas is configured to flow from the system towards the other end over the top of the membrane precursor, and the carrier gas, along with the membrane precursor gas phase, is exhausted through the outlet of the lid.</p><p> In some embodiments of the invention, the replaceable tray has an inner end and an outer end, the membrane precursor is held between the two, and the replaceable tray is said. It has one or more tray openings formed at the stackable inner end so that the carrier gas flows over the top of the membrane precursor from the carrier gas supply system towards the other end of the tray. The carrier gas is exhausted together with the gas phase of the membrane precursor through the outlet of the lid.</p>

The following description is for illustration purposes to better understand the present invention, and does not limit the present invention, and shows specific details such as a specific shape of the film forming system and various components. It is a thing. However, it should be noted that the present invention may be practiced in other embodiments that differ from these particular details.

With reference to the drawings, the same or corresponding parts are labeled with similar reference numerals throughout some of the drawings. FIG. 1 shows a system 1 for forming a thin film such as a metal film on a substrate according to an embodiment. The film forming system 1 has a process chamber 10 having a substrate holder 20 configured to support the substrate 25, and a thin film is formed on the substrate 25. The process chamber 10 is coupled to the membrane precursor evaporation system 50 via the gas phase precursor supply system 40.

Further, the process chamber 10 is coupled to the vacuum pump system 38 via a duct 36, which provides the process chamber 10, the gas phase precursor supply system 40, and the membrane precursor evaporation system 50 on the substrate 25. It is configured to be evacuated to a pressure suitable for forming a thin film into the membrane and further to a pressure suitable for evaporation of the membrane precursor (not shown) in the membrane precursor evaporation system 50.

Referring to FIG. 1, the membrane precursor evaporation system 50 is configured to store the membrane precursor and heat the membrane precursor to a temperature sufficient for the membrane precursor to volatilize, and the vapor phase. The membrane precursor is introduced into the vapor phase precursor supply system 40. Hereinafter, further details will be shown with reference to FIGS. 3 to 9, but the membrane precursor has, for example, a solid membrane precursor. The membrane precursor may also include, for example, a solid metal precursor. The membrane precursor may also contain, for example, the genus Carbonyl. For example, the carbonyl metal is carbonyl ruthenium (Ru).₃(CO)₁₂), Or carbonyl rhenium (Re₂(CO)₁₀) May be included. The carbonyl metal is additionally, for example, W (CO)₆, Mo (CO)₆, Co₂(CO)₈, Rh₄(CO)₁₂, Cr (CO)₆Or Os (CO)₁₂May be included. When forming tantalum (Ta), additionally, for example, the film precursor is TaF.₅, TaCl₅, TaBr₅, TaI₅, Ta (CO)₅, Ta [N (C)₂H₅CH₃)]₅(PEMAT), Ta [N (CH)₃)₂]₅(PDMAT), Ta [N (C)₂H₅)₂]₅(PDEAT), Ta (NC (CH)₃)₃) (N (C)₂H₅)₂)₃(TBTDET), Ta (NC)₂H₅) (N (C)₂H₅)₂)₃, Ta (NC (CH)₃)₂C₂H₅) (N (CH)₃)₂)₃, Ta (NC (CH)₃)₃) (N (CH)₃)₂)₃Or Ta (EtCp)₂It may contain (CO) H. Further, for example, when forming titanium (Ti), the film precursor is TiF.₄, TiCl₄, TiBr₄, TiI₄, Ti [N (C)₂H₅CH₃)]₄(TEMAT), Ti [N (CH)₃)₂]₄(TDMAT), Ti [N (C)₂H₅)₂]₄(TDEAT) may be included. When forming ruthenium (Ru), an additional film precursor, for example, is Ru (C).₅H₅)₂, Ru (C₂H₅C₅H₄)₂, Ru (C₃H₇C₅H₄)₂, Ru (CH)₃C₅H₄)₂, Ru₃(CO)₁₂, C₅H₄Ru (CO)₃, RuCl₃, Ru (C₁₁H₁₉O₂)₃, Ru (C₈H₁₃O₂)₃Or Ru (C₅H₇O)₃May be included.

To obtain the desired temperature at which the membrane precursor is volatilized (or the solid metal precursor is sublimated), the membrane precursor evaporation system 50 is coupled to an evaporation temperature control system 54 configured to control the evaporation temperature. .. For example, in conventional systems, the temperature of the membrane precursor is typically raised above about 40 ° C, causing the membrane precursor to sublimate or evaporate. When the membrane precursor is heated and evaporation (or sublimation) occurs, the carrier gas passes over the membrane precursor or is transported by the membrane precursor. The carrier gas is, for example, an inert gas such as a rare gas (ie, He, Ne, Ar, Kr, Xe), or a monooxide such as carbon monoxide (CO) used with a carbonyl metal, or A mixture thereof may be included. For example, the carrier gas supply system 60 is coupled to the membrane precursor evaporation system 50, which is configured to supply carrier gas to the top of the membrane precursor, eg, via a supply line 61. In another example, the carrier gas supply system 60 is coupled to the gas phase precursor supply system 40 and is configured to supply carrier gas to the gas phase of the membrane precursor via supply line 63, thereby or The membrane precursor is then introduced into the gas phase precursor supply system 40. Although not shown in the figure, the carrier gas supply system 60 has a gas source, one or more control valves, one or more filters and a mass flow controller. For example, the flow velocity of the carrier gas is about 5 sccm (standard cm).³It ranges from / minute) to about 1000 sccm. In another example, the flow velocity of the carrier gas may be in the range of about 20 sccm to about 100 sccm.

Downstream of the membrane precursor evaporation system 50, the gas phase of the membrane precursor flows with the carrier gas through the gas phase precursor supply system 40, and this gas phase is the gas phase dispersion system coupled to the process chamber 10. Introduced in 30. Since the gas phase precursor supply system 40 controls the temperature of the gas phase line, it is coupled to the gas phase line temperature control system 42 to prevent the vapor phase decomposition of the membrane precursor and the enrichment of the membrane precursor gas phase. .. For example, the vapor phase line temperature is set to a value approximately equal to or higher than the evaporation temperature. Also, for example, the gas phase precursor supply system 40 may be characterized to have high conductivity in excess of about 50 liters / sec.

Referring again to FIG. 1, the gas phase dispersion system 30 coupled to the process chamber 10 has a plenum 32, within which the gas phase is dispersed before penetrating the gas phase dispersion plate 34 and the substrate 25. Introduced in the processing zone above. Further, the gas phase dispersion plate 34 is coupled to a dispersion plate temperature control system 35 configured to control the temperature of the gas phase dispersion plate 34. For example, the temperature of the gas phase dispersion plate is set to a value substantially equal to the gas phase line temperature. However, this temperature may be lower or higher.

Once the membrane precursor vapor phase is introduced into the treatment zone 33, the membrane precursor vapor phase is thermally decomposed when adsorbed on the substrate surface due to the high temperature of the substrate 25, and a thin film is formed on the substrate 25. Is formed. The substrate holder 20 is coupled to the substrate temperature control system 22 and is configured to raise the temperature of the substrate 25. For example, the substrate temperature control system 22 is configured to raise the temperature of the substrate 25 to about 500 ° C. In some embodiments, the substrate temperature ranges from about 100 ° C to about 500 ° C. In another embodiment, the substrate temperature ranges from about 300 ° C to about 400 ° C. The process chamber 10 may also be coupled to a chamber temperature control system 12 configured to control the temperature of the chamber wall.

As mentioned above, for example, conventional systems have the membrane precursor gas phase system 50 and the gas at temperatures above about 40 ° C to suppress the decomposition of the metal gas phase precursor and the enrichment of the metal gas phase precursor. The phase precursor supply system 40 is activated.

Further, it is preferable that the film forming system 1 is periodically cleaned before the treatment of one or more substrates is performed. For example, additional details of the cleaning method and system were filed on November 29, 2004, in a co-pending U.S. patent entitled "Methods and Systems for In-situ Cleaning of Film Formation Systems". It is shown in Application No. 10/998394. This has been incorporated as a reference in the present application.

As mentioned above, the rate of film formation is proportional to the amount of film precursor transported to the substrate before evaporation, decomposition, concentration or both. Therefore, in order to obtain a desired film forming rate from one substrate to the next and maintain constant processing characteristics (that is, film forming rate, film thickness, film uniformity, film properties, etc.), It is important to provide the ability to monitor, regulate or control the flow velocity of the membrane precursor gas phase. In conventional systems, the operator indirectly determines the flow velocity of the membrane precursor vapor phase using the evaporation temperature and a predetermined relationship between the evaporation temperature and the flow velocity. However, it is inevitable to measure the flow velocity more accurately in order to perform the treatment at an appropriate time and obtain the characteristics. For example, additional details are co-pending U.S. Patent Application No. 10/998393, entitled "Methods and Systems for Measuring Flow Flows in Solid Precursor Feed Systems," filed November 29, 2004. It is shown in. This has been incorporated as a reference in the present application.

Referring to FIG. 1 again, the film forming system 1 further has a control system 80, which is configured to operate the film forming system 1 and control its operation. The control system 80 includes a process chamber 10, a substrate holder 20, a substrate temperature control system 22, a chamber temperature control system 12, a gas phase dispersion system 30, a gas phase precursor supply system 40, a membrane precursor evaporation system 50, and a carrier gas supply system. Combined with 60.

As yet another embodiment, FIG. 2 shows a film forming system 100 for forming a thin film such as a metal film on a substrate. The film forming system 100 has a process chamber, which has a substrate holder 120 configured to support a substrate 125 on which a thin film is formed. The process chamber 110 includes a membrane precursor evaporation system 150 that stores and volatilizes membrane precursors (not shown), a gas phase precursor supply system 140 configured to transport the membrane precursor vapor phase, and the like. It is coupled to a precursor supply system 105 having.

The process chamber 110 has an upper chamber compartment 111, a bottom chamber compartment 112, and an exhaust chamber 113. The bottom chamber compartment 112 is formed with an opening 114, which is coupled to the exhaust chamber 113.

With reference to FIG. 2 again, the substrate holder 120 provides a horizontal plane to the supported substrate (or wafer) 125 to be processed. The substrate holder 120 is supported by a cylindrical support member 122, which extends upward from the bottom of the exhaust chamber 113. If necessary, a guide ring 124 that positions the substrate 125 onto the substrate holder 120 is installed at the end of the substrate holder 120. Further, the substrate holder 120 has a heater 126, and this heater is coupled to the substrate holder temperature control system 128. The heater 126 may include, for example, one or more resistance heating elements. Alternatively, the heater 126 may have a radiant heating element such as a tungsten halogen lamp. The board holder temperature control system 128 measures the power supply that supplies power to one or two or more heating elements, one or two or more temperature sensors that measure the board temperature, the board holder temperature, or both, and the board or board holder temperature. It may have a controller configured to perform at least one of monitoring, adjustment or control.

During the treatment process, the heated substrate 125 thermally decomposes the gas phase of the film precursor gas phase such as the metal-containing film precursor to form a thin film such as a metal layer on the substrate 125. Is possible. In some embodiments, the membrane precursor comprises a solid precursor. In another embodiment, the membrane precursor comprises a metal precursor. In another embodiment, the membrane precursor comprises a solid metal precursor. In yet another embodiment, the membrane precursor comprises a carbonyl metal precursor. In yet another embodiment, the membrane precursor is a carbonyl ruthenium precursor, such as Ru.₃(CO)₁₂including. In yet another embodiment of the invention, the membrane precursor is a carbonyl rhenium precursor, such as Re.₂(CO)₁₀including. It will be apparent to those skilled in the art of thermochemical vapor deposition that other carbonyl ruthenium and carbonyl rhenium precursors can be used without departing from the scope of the invention. In yet another embodiment, the membrane precursor is W (CO).₆, Mo (CO)₆, Co₂(CO)₈, Rh₄(CO)₁₂, Cr (CO)₆Or Os (CO)₁₂Is. Further, for example, when forming a film of tantalum (Ta), the film precursor is TaF.₅, TaCl₅, TaBr₅, TaI₅, Ta (CO)₅, Ta [N (C)₂H₅CH₃)]₅(PEMAT), Ta [N (C)₂H₅CH₃)]₅(PEMAT), Ta [N (CH)₃)₂]₅(PDMAT), Ta [N (C)₂H₅)₂]₅(PDEAT), Ta (NC (CH)₃)₃) (N (C)₂H₅)₂)₃(TBTDET), Ta (NC)₂H₅) (N (C)₂H₅)₂)₃, Ta (NC (CH)₃)₂C₂H₅) (N (CH)₃)₂)₃, Ta (NC (CH)₃)₃) (N (CH)₃)₂)₃Or Ta (EtCp)₂Includes (CO) H. Further, for example, when forming titanium (Ti), the film precursor is TiF.₄, TiCl₄, TiBr₄, TiI₄, Ti [N (C)₂H₅CH₃)]₄(TEMAT), Ti [N (CH)₃)₂]₄(TDMAT), Ti [N (C)₂H₅)₂]₄(TDEAT) may be included. Further, for example, in the case of forming a ruthenium (Ru) film, the film precursor is Ru (C).₅H₅)₂, Ru (C₂H₅C₅H₄)₂, Ru (C₃H₇C₅H₄)₂, Ru (CH)₃C₅H₄)₂, Ru₃(CO)₁₂, C₅H₄Ru (CO)₃, RuCl₃, Ru (C₁₁H₁₉O₂)₃, Ru (C₈H₁₃O₂)₃Or Ru (C₅H₇O)₃May be included.

The substrate holder 120 is heated to, for example, a predetermined temperature suitable for forming a desired metal layer on the substrate 125. Also, a heater (not shown) is coupled to the chamber temperature control system 121 and embedded in the wall of the process chamber 110, which heats the chamber wall to a predetermined temperature. The heater is maintained so that the temperature of the walls of the process chamber 110 is in the range of about 40 ° C to about 100 ° C, for example from about 40 ° C to about 80 ° C. A pressure gauge (not shown) is used to measure the pressure in the process chamber.

Also, as shown in FIG. 2, the gas phase dispersion system 130 is coupled to the upper chamber compartment 111 of the process chamber 110. The gas phase dispersion system 130 has a gas phase dispersion plate 131, which processes the precursor vapor phase from the gas phase dispersion plenum 132 via one or more orifices 134 on top of the substrate 125. It is configured to be deployed in Zone 133.

Further, the upper chamber compartment 111 is formed with an opening 135 for introducing the gas phase precursor from the gas phase precursor supply system 140 into the gas phase dispersion plenum 132. Also, in order to control the temperature of the gas phase dispersion system 130, a temperature control element 136, such as a concentric fluid groove configured to supply a cooling fluid or a heating fluid, is provided, thereby providing a gas. Degradation of membrane precursors within the phase dispersion system 130 is avoided. For example, a fluid such as water is supplied from the gas phase dispersion temperature control system 138 to the fluid groove. The gas phase dispersion temperature control system 138 measures the fluid source, the heat exchanger, one or more temperature sensors that measure the fluid temperature and / or the temperature of the gas phase dispersion plate, and the temperature of the gas phase dispersion plate 131. It has a controller configured to control from about 20 ° C to about 100 ° C.

The membrane precursor evaporation system 150 is configured to hold the membrane precursor and raise the temperature of the membrane precursor to volatilize (or sublimate) the membrane precursor. A precursor heater 154 is installed to heat the membrane precursor and maintain the temperature at which the membrane precursor has a desired gas phase pressure. The precursor heater 154 is coupled to an evaporation temperature control system 156, which is configured to control the temperature of the membrane precursor. For example, the precursor heater 154 is configured to adjust the temperature (or evaporation temperature) of the membrane precursor to about 40 ° C. or higher. Alternatively, the evaporation temperature may be raised to about 50 ° C. or higher. For example, the evaporation temperature is raised to a temperature of about 60 ° C. or higher. In one example, the evaporation temperature is raised to the range of about 60-100 ° C, and in another example it is raised to the range of about 60-90 ° C. Further, the precursor heater may be provided for each tray. Such a heater may be, for example, a resistance heating type.

When the membrane precursor is heated, evaporation (or sublimation) occurs and the carrier gas passes over or is carried by the membrane precursor. The carrier gas may be, for example, an inert gas such as a rare gas (ie, He, Ne, Ar, Kr, Xe), or a monooxide such as carbon monoxide (CO) used with a carbonyl metal, or these. Contains a mixture of. For example, the carrier gas supply system 160 is coupled to the membrane precursor evaporation system 150, which is configured to supply carrier gas, for example, on top of the membrane precursor. Also, although not shown in FIG. 2, the carrier gas supply system 160 is coupled with the gas phase precursor supply system 140 to supply carrier gas to the gas phase of the membrane precursor, which or thereafter. The gas phase is introduced into the gas phase precursor supply system 140. The carrier gas supply system 160 includes a gas source 161, one or more control valves 162, one or more filters 164, and a mass flow controller 165. For example, the flow velocity of the carrier gas is about 5 sccm (standard cm).³It ranges from / minute) to about 1000 sccm. In one embodiment, for example, the flow velocity of the carrier gas ranges from about 10 sccm to about 200 sccm. In another embodiment, for example, the flow velocity of the carrier gas ranges from about 20 sccm to about 100 sccm.

In addition, a sensor 166 that measures the total gas flux from the membrane precursor evaporation system 150 is installed. The sensor 166 has, for example, a mass flow controller, and the amount of membrane precursor supplied to the process chamber 110 is determined using the sensor 166 and the mass flow controller 165. Alternatively, the sensor 166 may have a light absorption sensor, in which case the concentration of membrane precursors in the gas flux towards the process chamber 110 is measured.

A bypass line 167 may be installed downstream of the sensor 166, which connects the gas phase supply system 140 to the exhaust line 116. Bypass line 167 is provided to vacuum the gas phase precursor supply system 140 and stabilize the supply of membrane precursors to the process chamber 110. In addition, a bypass line 168 is installed at the bypass line 167 on the downstream side from the branch of the gas phase precursor supply system 140.

Also referring to FIG. 2, the gas phase precursor supply system 140 has a highly conductive gas phase line, which has first and second valves 141, 142. Further, the gas phase precursor supply system 140 further has a gas phase line temperature control system 143, and the gas phase line temperature control system 143 uses a heater (not shown) to connect the gas phase precursor supply system 140. It is configured to heat. The temperature of the gas phase line is controlled to avoid concentration of membrane precursors in the gas phase line. The temperature of the gas phase line is controlled from about 20 ° C to about 100 ° C, or from about 40 ° C to about 90 ° C. For example, the vapor phase line temperature is set to a value approximately equal to or greater than the evaporation temperature.

Further, the diluent gas may be supplied from the dilution gas supply system 190. The diluent gas is, for example, an inert gas such as a rare gas (ie, He, Ne, Ar, Kr, Xe), or a monooxide such as carbon monoxide (CO) used with a carbonyl metal, or these. May contain a mixture of. For example, the dilution gas supply system 190 is coupled to the gas phase precursor supply system 140, which is configured to, for example, supply the dilution gas to the gas phase membrane precursor. The dilution gas supply system 190 includes a gas source 191 and one or more control valves 192, one or more filters 194, and a mass flow controller 195. For example, the flow velocity of the carrier gas is about 5 sccm (standard cm).³It ranges from / minute) to about 1000 sccm.

Mass flow controllers 165 and 195 and valves 162, 192, 168, 141 and 142 are controlled by controller 196, which controls supply, shutoff, carrier gas, membrane precursor gas phase and diluent gas. Control the flux of. A sensor 166 is further connected to the controller 196, and based on the output of the sensor 166, the controller 196 controls the flux of carrier gas via the mass flow controller 165, thereby relative to the process chamber 110. The desired membrane precursor flux is obtained.

As shown in FIG. 2, the exhaust line 116 connects the exhaust chamber 113 with the pump system 118. Using the vacuum pump 119, the process chamber 110 is evacuated to the desired vacuum stage and the gas species are removed from the process chamber 110 during the processing process. An automatic pressure controller (APC) 115 and a trap 117 may be used in series with the vacuum pump 119. Vacuum pump 119 may include a turbo molecular pump (TMP) with a pump speed of 5000 liters / sec (and higher). Alternatively, the vacuum pump 119 may include a dry roughing pump. During the processing process, carrier gas, diluent gas, membrane precursor gas phase or a combination thereof is introduced into the process chamber 110 and the chamber pressure is adjusted by the APC 115. For example, the chamber pressure ranges from about 1 mTorr to about 500 mTorr, and in another embodiment the chamber pressure ranges from about 5 mTorr to 50 mTorr. The APC115 may have a butterfly type valve or a gate valve. Trap 117 collects unreacted precursor material and by-products from process chamber 110.

With reference to the board holder 120 in the process chamber 110, three board lift pins 127 (only two are shown) are installed to hold, raise and lower the board 125, as shown in FIG. .. The board lift pin 127 is coupled to the board 123 and can be lowered below the upper surface of the board holder 120. For example, a drive mechanism 129 such as an air cylinder is used to provide means for raising and lowering the plate 123. The substrate 125 is loaded into and out of the process chamber 110 via the gate valve 200 and the chamber through-passage 202 by a robotic transfer system (not shown), and the substrate 125 is received by the substrate lift pin 127. Once the substrate 125 is received by the transport system, the substrate lift pin 127 is lowered to lower the substrate onto the upper surface of the substrate holder 120.

Referring to FIG. 2, the controller 180 has a microprocessor, memory, and a digital I / O port that communicates with the input of the processing system 100 to activate it and output from the processing system 100. Generate enough control voltage to monitor. The processing system controller 180 also includes a process chamber 110; a precursor supply system 105 having a controller 196, a gas phase line temperature control system 142 and an evaporation temperature control system 156; a gas phase dispersion temperature control system 138; a vacuum pump system 118. &amp; Also coupled with the substrate holder temperature control system 128; to exchange information. In the vacuum pump system 118, the controller 180 is coupled with an automatic pressure controller 115 that controls the pressure in the process chamber 110 to exchange information. A program stored in memory is used to control the aforementioned components of the film formation system 100 based on the stored process recipes. An example of a processing system controller 180 is the Dell Precision Workstation 610, which is available from Dallas Dell Corporation, Texas. Further, the controller 180 may be operated by a general-purpose computer, a digital signal processor, or the like.

However, the controller 180 is a microprocessor based on the process steps of the present invention, in response to a processor running in a general purpose computer system and executing one or more series of instructions stored in memory. Part or all may be implemented. Such instructions may be read in control memory from another computer readable medium such as a hard disk or removable media drive. Also, one or more processors in a multi-process arrangement may be used as control microprocessors to execute a series of instructions stored in main memory. In another embodiment, hardwire circuits may be used in place of or in combination with software instructions. As such, the examples are not limited to any particular combination of hardware circuits and software.

The controller 180 has at least one computer reading medium, or memory such as a control memory, holds programmed instructions according to the invention, and data structures, tables, records or other data necessary for the practice of the invention. To accommodate. Examples of computer reading media include compact discs, hard disks, floppy disks (registered trademarks), tapes, optomagnetic disks, PROMs (EPROM, EEPROM, flash EPROM), DRAM, SRAM, SDRAM, or any other magnetic medium, compact discs. (Eg CD-ROM) or any other optical medium, punch card, paper tape, or other physical medium with a pattern of holes, carrier wave (shown below), or any other computer-readable medium. You may.

When stored on any one or a combination of computer reading media, the present invention includes software that controls the controller 180, software that drives a device or a device that implements the invention, and / or a human user. Includes software that provides controls for exchanging information. Such software includes, but is not limited to, device drivers, operating systems, development tools, and application software. Such computer reading media further include computer program products that perform some or all of the processing (if a processing process is assigned) to perform the present invention.

The computer coding device of the present invention may be any interpretable or executable code mechanism, including, but not limited to, interpretable programs, dynamic ink libraries (DLLs), Javaclasses, and. It may include a complete executable program. Also, some of the processes of the present invention may be provided with better properties, reliability and / or cost.

In the present application, the term "computer reading medium" is used in the case of an instruction to refer to any medium that provides an instruction to the processor of the controller 180. Computer reading media are in many forms and include, but are not limited to, non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical discs, magnetic disks, and magneto-optical disks such as hard disks or removable media drives. Volatile media include dynamic memory such as main memory. Also, various forms of computer reading media include those that, upon execution, carry one or more series of instructions to the processor of the control. For example, the instructions are initially carried on the magnetic disk of the remote computer. The remote computer loads the instructions, remotely executes all or part of the invention in dynamic memory, and sends the instructions to the controller 180 over the network.

The controller 180 may be installed in the vicinity of the film forming system 100, or may be remotely installed in the film forming system 100 via the Internet or an intranet. Therefore, the controller 180 can exchange data with the film formation system 100 using at least one of direct connection, intranet or internet. The controller 180 may be connected to the intranet at the customer site (that is, the device manufacturer side, etc.), or may be connected to the intranet at the vendor site (that is, the device manufacturer side). Another computer (ie, control, server, etc.) may access control 180 and exchange data via at least one of direct connections, an intranet, or the Internet.

Next, referring to FIG. 3, this figure shows a cross-sectional view of the membrane precursor evaporation system 300 according to the embodiment. The membrane precursor evaporation system 300 has a container 310 with an outer wall 312 and a bottom 314. Further, the film precursor evaporation system 300 has a lid 320 configured to be hermetically bonded to the container 310, and the lid 320 is hermetically bonded to a thin film film forming system as shown in FIG. 1 or 2. It has an outlet 322 configured as such. The container 310 and the lid 320 form a closed environment when joined to the thin film deposition system. The container 310 and the lid 320 are made of, for example, A6061 aluminum and may or may not be coated on it.

The vessel 310 is also coupled to a heater (not shown) to increase the evaporation temperature of the membrane precursor evaporation system 300 and to perform at least one of monitoring, adjustment or control of the evaporation temperature. It is configured to be coupled to a temperature control system (not shown). When the evaporation temperature reaches the proper value as described above, the membrane precursor evaporates (or sublimates) to form the membrane precursor vapor phase, which passes through the steam supply system and the thin film deposition system. Will be transported to. Further, the container 310 is hermetically bonded to a carrier gas supply system (not shown), and the container 310 is configured to receive the carrier gas that carries the membrane precursor gas phase.

With reference to FIGS. 3 and 4, the membrane precursor evaporation system 300 further comprises a base tray 330, which is formed on the bottom 314 of the container 310 to provide the membrane precursor 350 on the base tray 330. It has a base outer wall 332 configured to hold. The base outer wall 332 has a base support end, where the upper tray is supported, as shown below. Also, the base outer wall 332 has one or more base tray openings 334, which are from the carrier gas supply system (not shown) to the top of the membrane precursor 350 towards the center of the container 310. It is configured to allow the carrier gas to flow, and the carrier gas is discharged from the outlet 322 of the lid 320 along with the membrane precursor gas phase along the gas phase exhaust space such as the central groove 318. Therefore, the level of the membrane precursor in the base tray 330 is set below the position of the base tray opening 334.

With reference to FIGS. 3 and 5A, 5B, the membrane precursor evaporation system 300 further has one or more stackable top trays 340, which support the membrane precursor 350 and at least. It is configured to be installed or stacked on one base tray 330 or another stackable upper tray 340. Each stackable upper tray 340 has an upper outer wall 342 and an inner wall 344, and is configured to hold the membrane precursor 150 between them. The inner wall 344 shapes the central flux groove 318. The upper outer wall 342 also has an upper support end 333, which end supports an additional upper tray 340. Therefore, the first upper tray 340 is installed so as to be held by the base support end 333 of the base tray 330, and if necessary, one or more additional upper trays can be added to the front upper tray 340. It may be installed so as to be supported by the upper support end portion 343. The upper outer wall 342 of each upper tray 340 has one or more upper tray openings 346, which are from the carrier gas supply system (not shown) through the central flow groove 318 of the container 310. , The carrier gas is configured to flow over the membrane precursor 350, and the carrier gas is exhausted together with the membrane precursor gas phase through the outlet 322 of the lid 320. For this reason, the inner wall 344 needs to be shorter than the upper outer wall 342, which allows the carrier gas to flow substantially radially towards the central flux groove 318. Also, the level of the membrane precursor in each upper tray 340 should be less than or equal to the height of the inner wall 342 and lower than the position of the upper tray opening 346.

The upper tray 340, which can be stacked with the base tray 330, is drawn in a cylindrical shape. However, this shape may be changed. For example, the shape of the tray may be rectangular, square, or oval. Similarly, the inner wall 344 and even the central upper flux groove 318 may have different shapes.

When one or more stackable trays 340 are stacked on the base tray 330, a stack 370 is formed, which forms between the base outer wall 332 of the base tray 330 and the container outer wall 312, and one or more stacks. Between the upper outer wall of the possible upper tray 240 and the container outer wall 312, a peripheral grooved carrier gas supply space such as the annular space 360 is provided. In addition, the container may have one or more spacers (not shown), which are the base outer wall 332 of the base tray 330 and the upper outer wall of one or more stackable upper trays 340. The 342 is configured to be separated from the outer wall 312 of the container, whereby an equivalent space is secured in the annular space 360. In another method of one embodiment, the container 310 is configured such that the base outer wall 332 and the top wall 342 are vertically aligned. The container 310 may also have one or more thermal contact members (not shown) that provide mechanical contact between the inner wall of the container 310 and the outer wall of each tray. This facilitates the transfer of thermal energy from the wall of the container 310 to each tray.

A sealing device, such as an O-ring, may be installed between each tray and adjacent trays, in which case a vacuum seal is obtained between one tray and the next. For example, the sealing device may be placed in a receiving groove (not shown) formed within the upper support end 343 of the upper outer wall 342 and the base support end 333 of the base outer wall 332. In this case, once the tray is introduced into the container 310, the joining of the lid 320 and the container 310 facilitates compression of each sealing device. The sealing device may have, for example, an elastomer O-ring. The sealing device may also have, for example, a VITON O-ring.

The number of trays, including both the base tray and the stackable top tray, ranges from 2 to 20, for example, in one embodiment, the number of trays is 5, as shown in FIG. In one embodiment, the stack 370 has a base tray 330 and at least one upper tray 340 supported by the base tray 330. The base tray 330 may be the one shown in FIGS. 3 and 4, and may have the same configuration as the upper tray 340 shown in FIGS. 3 to 5B. In other words, the base tray 330 may have an inner wall. In FIGS. 3-5B, stack 370 is shown to have a base tray 330 and one or more separable and stackable top trays 340, whereas system 300'is a container with stack 370'. May have 310', this stack is a single integration piece with one or more top trays 340 and base tray 330 integrated, with base outer wall 332 and top as shown in Figure 6. The outer wall 342 is integrated. The term integration includes monolithic structures such as integrally molded structures with no clear boundaries between trays and mechanically joined structures that are permanently in close contact or have a permanent joining device between trays. You need to understand that. It should be understood that the term separable does not include joiners or temporary joiners between trays, whether in close contact or mechanical.

The base tray 330 and each upper tray 340, whether stackable or integrated, are configured to support the membrane precursor 350. In some embodiments, the membrane precursor 350 comprises a solid precursor. In another embodiment, the membrane precursor 350 has a liquid precursor. In another embodiment, the membrane precursor 350 has a metal precursor. In another embodiment, the membrane precursor 350 comprises a solid metal precursor. In yet another embodiment, the membrane precursor 350 comprises a carbonyl metal precursor. In yet another embodiment, the membrane precursor 350 is a carbonyl ruthenium precursor, such as Ru.₃(CO)₁₂Have. In yet another embodiment, the membrane precursor 350 is a carbonyl rhenium precursor, such as Re.₂(CO)₁₀Have. In yet another embodiment, the membrane precursor 350 is W (CO).₆, Mo (CO)₆, Co₂(CO)₈, Rh₄(CO)₁₂, Cr (CO)₆Or Os (CO)₁₂including. In yet another embodiment, when tantalum (Ta) is formed, the film precursor 350 is TaF.₅, TaCl₅, TaBr₅, TaI₅, Ta (CO)₅, Ta [N (C)₂H₅CH₃)]₅(PEMAT), Ta [N (CH)₃)₂]₅(PDMAT), Ta [N (C)₂H₅)₂]₅(PDEAT), Ta (NC (CH)₃)₃) (N (C)₂H₅)₂)₃(TBTDET), Ta (NC)₂H₅) (N (C)₂H₅)₂)₃, Ta (NC (CH)₃)₂C₂H₅) (N (CH)₃)₂)₃, Ta (NC (CH)₃)₃) (N (CH)₃)₂)₃Or Ta (EtCp)₂Includes (CO) H. In yet another embodiment, when titanium (Ti) is formed, the film precursor 350 is TiF.₄, TiCl₄, TiBr₄, TiI₄, Ti [N (C)₂H₅CH₃)]₄(TEMAT), Ti [N (CH)₃)₂]₄(TDMAT), Ti [N (C)₂H₅)₂]₄(TDEAT) may be included. In yet another embodiment, when ruthenium (Ru) is formed, the film precursor 350 is Ru (C).₅H₅)₂, Ru (C₂H₅C₅H₄)₂, Ru (C₃H₇C₅H₄)₂, Ru (CH)₃C₅H₄)₂, Ru₃(CO)₁₂, C₅H₄Ru (CO)₃, RuCl₃, Ru (C₁₁H₁₉O₂)₃, Ru (C₈H₁₃O₂)₃Or Ru (C₅H₇O)₃May be included.

As mentioned above, the membrane precursor 350 may include a solid precursor. The solid precursor may be in the form of a solid powder or in the form of one or more tablets. For example, one or more solid tablets are prepared in many processing processes, including sintering processes, stamping processes, dipping processes, spin coating processes or any combination thereof. Further, the solid tablet-like solid precursor may or may not be in close contact with the base tray 330 or the upper tray 340. For example, the heat resistant metal powder may be sintered at a temperature of 2000 ° C to 2500 ° C in a sintering furnace for a vacuum and an inert gas atmosphere. Alternatively, for example, the heat-resistant metal powder may be dispersed in a fluid medium, distributed on a tray, and uniformly dispersed on the surface of the tray using a spin coating process. The heat resistant metal spin coat is then thermally cured.

As mentioned above, the carrier gas is supplied to the container 310 from the carrier gas supply system (not shown). As shown in FIGS. 3 and 6, the carrier gas is supplied from the lid 320 to the container 310 via a gas supply line (not shown) that is hermetically joined to the lid 320. The gas supply line provides a gas channel 380, which extends downstream through the outer wall 312 of the container 310, through the bottom 314 and the opening of the container 310, and reaches the annular space 360.

Alternatively, as shown in FIG. 7, the carrier gas may be supplied to the vessel 310 of the membrane precursor evaporation system 400 through an opening 480 in the lid 320, in which case the gas is delivered directly into the annular space 360. Be supplied. Alternatively, as shown in FIG. 8, the carrier gas may be supplied to the vessel 310 of the membrane precursor evaporation system 500 through an opening 580 in the outer wall 312, in which case the gas is delivered directly into the annular space 360. Be supplied.

Referring again to FIG. 3, the inner diameter of the container outer wall 312 is, for example, in the range of about 10 cm to about 100 cm, for example, in the range of about 15 cm to about 40 cm. For example, the inner diameter of the outer wall 312 may be 20 cm. The diameter of the outlet 322 and the inner diameter of the inner wall 344 of the upper tray 340 may be in the range of, for example, about 1 cm to 30 cm, for example, the outlet diameter and the diameter of the inner wall are in the range of about 5 to about 20 cm. For example, the outlet diameter may be 10 cm. Also, the outer diameter of the base tray 330 and each upper tray 340 ranges from about 75% to about 99% of the inner diameter of the outer wall 312 of the container 310, for example, the diameter of the tray is the inner diameter of the outer wall 312 of the container 310. It ranges from about 85% to 99%. For example, the diameter of the tray is 19.75 cm. The height of the base outer wall 332 of the base tray 330 and the upper outer wall 342 of each upper tray 340 ranges from about 5 mm to about 50 mm, for example, each height is about 30 mm. The height of each inner wall 344 ranges from about 10% to about 90% of the height of the upper outer wall 342. For example, the height of each inner wall ranges from about 2 mm to about 45, for example from about 10 mm to about 20 mm. For example, the height of each inner wall is about 12 mm.

With reference to FIG. 3 again, one or more base tray openings 334 and one or more upper tray openings 346 may have one or more grooves. Alternatively, one or more base tray openings 334 and one or more upper tray openings 346 may have one or more orifices. The diameter of each orifice ranges, for example, from about 0.4 mm to about 2 mm. For example, the diameter of each orifice may be about 1 mm. In one embodiment, the diameter of the orifice and the width of the annular space 360 were chosen such that the conductivity of the annular space 360 was sufficiently large compared to the net conductivity of the orifice and of the carrier gas across the annular space 360. The distribution is maintained substantially uniform. If the annular space 360 is sufficiently conductive compared to the net conductivity of the orifice, the carrier gas will flow uniformly over the membrane precursor 350 in each tray. For those skilled in the art of vacuum design, the dimensions of the annular space 360, the opening of each tray 346, using the principles of conventional vacuum technology, or mathematical simulations or experiments, or a combination of these, taking into account the fabrication. Design criteria can be set for the diameter of the tray, the length of the opening of each tray, and the like. For example, if 72 1 mm DIA tray openings and 5 trays are used and the container 310 has a diameter of about 20 cm, the thickness of the annular space 360 can be about 1.8 mm or more, for example 2.65 mm. it can. Also, for example, if 72 0.4 mm DIA tray openings and 5 trays are used and the container 310 has a diameter of about 20 cm, the thickness of the annular space 360 can be about 0.55 mm or more. .. Further, for example, if 72 1.6 mm DIA tray openings and 5 trays are used and the container 310 has a diameter of about 20 cm, the thickness of the annular space 360 is about 3. It can be 5 mm or more. The number of orifices is, for example, in the range of about 2 to about 1000, and in another embodiment it is in the range of about 50 to about 100. For example, one or more base tray openings 334 may have 72 orifices with a diameter of 1 mm, and one or two stackable tray openings 346 may have 72 orifices with a diameter of 1 mm. good. In this case, the width of the annular space 360 is about 2.65 mm.

Further, the gas phase exhaust space, that is, the central flux groove 318 may be designed to have high flux conductivity. For example, the net flux conductivity from the outlet of one or two tray openings to the outlet 322 of container 310 exceeds about 50 liters / second, or the flux conductivity exceeds about 100 liters / second, or Flux conductivity exceeds about 500 liters / sec.

Referring to FIG. 9, this figure shows a cross-sectional view of the membrane precursor evaporation system 600 according to another embodiment. The membrane precursor evaporation system 600 has a vessel 610, which vessel has an outer wall 612 and a bottom 614. The membrane precursor evaporation system 600 also has a lid 620 hermetically bonded to the vessel 610, which outlet is configured to be hermetically connected to a thin film deposition system as shown in FIG. 1 or 2. Has 680. The container 610 and lid 620 form a closed environment when connected to the thin film deposition system. The container 610 and lid 620 are made of, for example, A6061 aluminum, which may or may not have a coating.

The vessel 610 is also temperature controlled to be coupled to a heater (not shown) to increase the evaporation temperature of the membrane precursor evaporation system 600 and to perform at least one of monitoring, adjustment or control of the evaporation temperature. It is configured to be coupled to a system (not shown). When the evaporation temperature reaches the above-mentioned proper value, the film precursor evaporates (or sublimates) and a film precursor gas phase is formed, and this gas phase passes through the gas phase supply system and the thin film film forming system. Will be shipped to. Further, the container 610 is hermetically bonded to the carrier gas supply system 4 (not shown), and the container 610 is configured to receive the carrier gas that carries the membrane precursor gas phase.

Referring again to FIG. 9, further the membrane precursor evaporation system 600 has one or more stackable trays 640, which support the membrane precursor 650 and another stackable tray 640. It is configured to be installed or stacked on top. Each stackable tray 640 has a tray outer wall 642 and a tray inner wall 644, and a film precursor 650 is held between the two. The tray inner wall 644 defines a carrier gas supply space such as the central flux groove 618, and the carrier gas flows through this space through the tray inner wall 644 to the upper part of the membrane precursor 650. The tray inner wall 644 further has a tray support end 643 that supports an additional tray 640. Therefore, the second stackable tray 640 is installed so as to be supported by the lower tray support end 643 of the first stackable tray 640, and if necessary, of the later stackable tray 640. One or more additional stackable trays are installed to support the support end 643. The tray inner wall 644 of each stackable tray 640 has one or more tray openings 646, which are from the carrier gas supply system (not shown) to the outer circumference such as the annular space 660 of the container 610. The carrier gas is configured to flow over the membrane precursor 650 through the central flow flux groove 618 towards the groove-forming vapor phase exhaust space, and the carrier gas, along with the membrane precursor gas phase, of the lid 620. Exhausted through exit 680. Therefore, the tray outlet wall 642 needs to be shorter than the tray inner wall 644 so that the carrier gas flows substantially radially into the annular space 660. Also, the level of the membrane precursor in each stackable tray 640 must be below the height of the tray outer wall 642 and below the position of the tray opening 646.

The stackable tray 640 is drawn in a cylindrical shape. However, this shape may be changed. For example, the shape of the tray may be rectangular, square or oval. Similarly, the inner wall 644 and even the central flux wall 618 may have different shapes.

When one or more stackable trays 640 are stacked on top of each other, a stack 670 is formed, which stack is annular between the tray outer wall 642 of one or two stackable trays 640 and the container outer wall 612. Provides space 660. Container 610 further has one or more spacers (not shown) that are configured to separate the tray outer wall 642 of one or more stackable trays 640 from the container outer wall 612. As a result, it is possible to secure an equivalent space in the annular space 660. In one embodiment of another method, the container 610 is configured such that the tray outer walls 642 are vertically aligned. The container 610 may also have one or more thermal contact members (not shown), which members provide mechanical contact between the inner wall of the container 610 and the outer wall of each tray. This allows the transfer of thermal energy from the walls of the container 610 to each tray.

A sealing device, such as an O-ring, may be installed between each tray and adjacent trays, in which case a vacuum seal is obtained between one tray and the next. For example, the sealing device may be placed in a receiving groove (not shown) formed within the tray support end 643 of the inner wall 642. In this case, once the tray is introduced into the container 310, the joining of the lid 620 and the container 610 facilitates compression of each sealing device. The sealing device may have, for example, an elastomer O-ring. The sealing device may also have, for example, a VITON® O-ring.

The number of trays ranges from 2 to 20, for example, in one embodiment, the number of trays is 5, as shown in FIG. In one embodiment, the stack 670 has at least two stackable trays 640. The stack 670 may have a plurality of stack trays with a plurality of separable and stackable trays, or may have a single integration piece in which the trays are integrated with each other. .. The term "integration" refers to monolithic structures that do not have clear boundaries between trays, such as integrally molded structures, and mechanically joined structures that are permanently joined or mechanically joined with a permanent joiner installed between the trays. It is necessary to understand that the structure is included. It should be understood that the term separable includes those that do not have a joining or temporary joining between the trays, whether they are in close contact or mechanical.

The stackable tray 640, whether stackable or integrated, is configured to support the membrane precursor 650. In one embodiment, the membrane precursor 650 comprises a solid precursor. In another embodiment, the membrane precursor 650 has a liquid precursor. In another embodiment, the membrane precursor 650 has a metal precursor. In another embodiment, the membrane precursor 650 comprises a solid metal precursor. In yet another embodiment, the membrane precursor 650 comprises a carbonyl metal precursor. In yet another embodiment, the membrane precursor 650 is a carbonyl ruthenium precursor, such as Ru.₃(CO)₁₂Have. In yet another embodiment, the membrane precursor 650 is a carbonyl rhenium precursor, such as Re.₂(CO)₁₀Have. In yet another embodiment, the membrane precursor 650 is W (CO).₆, Mo (CO)₆, Co₂(CO)₈, Rh₄(CO)₁₂, Cr (CO)₆Or Os (CO)₁₂including. In yet another embodiment, when tantalum (Ta) is formed, the film precursor 650 is TaF.₅, TaCl₅, TaBr₅, TaI₅, Ta (CO)₅, Ta [N (C)₂H₅CH₃)]₅(PEMAT), Ta [N (CH)₃)₂]₅(PDMAT), Ta [N (C)₂H₅)₂]₅(PDEAT), Ta (NC (CH)₃)₃) (N (C)₂H₅)₂)₃(TBTDET), Ta (NC)₂H₅) (N (C)₂H₅)₂)₃, Ta (NC (CH)₃)₂C₂H₅) (N (CH)₃)₂)₃, Ta (NC (CH)₃)₃) (N (CH)₃)₂)₃Or Ta (EtCp)₂Includes (CO) H. In yet another embodiment, when titanium (Ti) is formed, the film precursor 650 is TiF.₄, TiCl₄, TiBr₄, TiI₄, Ti [N (C)₂H₅CH₃)]₄(TEMAT), Ti [N (CH)₃)₂]₄(TDMAT), Ti [N (C)₂H₅)₂]₄(TDEAT) may be included. In yet another embodiment, when ruthenium (Ru) is formed, the film precursor 650 is Ru (C).₅H₅)₂, Ru (C₂H₅C₅H₄)₂, Ru (C₃H₇C₅H₄)₂, Ru (CH)₃C₅H₄)₂, Ru₃(CO)₁₂, C₅H₄Ru (CO)₃, RuCl₃, Ru (C₁₁H₁₉O₂)₃, Ru (C₈H₁₃O₂)₃Or Ru (C₅H₇O)₃May be included.

As mentioned above, the membrane precursor 650 may include a solid precursor. The solid precursor may be in the form of a solid powder or in the form of one or more solid tablets. For example, one or more solid tablets are prepared in many processing processes, including sintering processes, stamping processes, dipping processes, spin coating processes or any combination thereof. Further, the solid tablet-like solid precursor may or may not be in close contact with the stackable tray 640. For example, the heat resistant metal powder may be sintered at a temperature of 2000 ° C to 2500 ° C in a sintering furnace for a vacuum and an inert gas atmosphere. Alternatively, for example, the heat-resistant metal powder may be dispersed in a fluid medium, distributed on a tray, and uniformly dispersed on the surface of the tray using a spin coating process. The heat resistant metal spin coat is then thermally cured.

As described above, the carrier gas may be supplied to the container 610 from a carrier gas supply system (not shown). As shown in FIG. 9, the carrier gas is supplied to the container 610 through the lid 620 via a gas supply line (not shown) hermetically joined to the lid 620. The gas supply line is connected to the central flux groove 618.

Referring again to FIG. 9, the inner diameter of the container outer wall 612 is, for example, in the range of about 10 m to about 100 cm, for example, in the range of about 15 cm to about 40 cm. For example, the inner diameter of the outer wall 612 may be 20 cm. The inner diameters of the outlet 622 and the inner wall 644 of the stackable tray 640 are, for example, in the range of about 1 cm to about 30 cm, for example, the outlet diameter and the inner wall diameter are in the range of about 5 to about 20 cm. For example, the outer diameter is 10 cm. Further, the outer diameter of each stackable tray 640 is from about 75% to about 99% of the inner diameter of the outer wall 612 of the container 610. For example, the diameter of the tray is from about 85% of the inner diameter of the outer wall 612 of the container 610. It is in the range of 99%. For example, the diameter of the tray may be 19.75 cm. Further, the height of the tray inner wall 644 of each stackable tray 640 may be in the range of about 5 mm to about 50 mm, and for example, each height is about 30 mm. Further, the height of each outer wall 642 may be in the range of about 10% to about 90% of the height of the inner wall 644 of the tray. For example, the height of each outer wall ranges from about 2 mm to about 45 mm, for example, from about 10 mm to about 20 mm. For example, the height of each inner wall is about 12 mm.

Referencing FIG. 9 again, one or more tray openings 646 may have one or more grooves. Alternatively, one or more tray openings 646 may include one or more orifices. The diameter of each orifice ranges, for example, from about 0.4 mm to about 2 mm. For example, the diameter of each orifice may be about 1 mm. In one embodiment, the diameter of the orifice and the diameter of the central flux groove 618 were chosen such that the conductivity of the central flux groove 618 was sufficiently large compared to the net conductivity of the orifice, and the central flux groove 618. The distribution of carrier gas throughout is maintained substantially uniform. The number of orifices is, for example, in the range of about 2 to about 1000, and in another embodiment it is in the range of about 50 to about 100. For example, one or more tray openings 646 may have 72 orifices with a diameter of 1 mm, and the central flux groove 618 is about 10 to 30 mm.

Further, the gas phase exhaust space, that is, the annular space 660 is designed to have high flux conductivity. For example, the net flux conductivity from the outlet of one or two tray openings in each tray to the outlet 680 of container 610 exceeds about 50 liters / second, or the flux conductivity is about 100 liters / second. Over seconds, or flux conductivity exceeds about 500 liters / second.

Any of the membrane precursor systems 300, 300', 400, 500 or 600 may be used as the membrane precursor evaporation system 50 of FIG. 1 or the membrane precursor evaporation system 150 of FIG. Alternatively, the system 300, 300', 400, 500 or 600 may be used in any film formation system suitable for film formation of a thin film from the precursor vapor phase onto the substrate. For example, deposition systems include thermochemical vapor deposition (CVD) systems, plasma accelerated CVD (PECVD) systems, atomic layer deposition (ALD) systems or plasma accelerated ALD (PEALD) systems.

With reference to FIG. 10, this figure shows a method of forming a thin film on a substrate. The steps of installing the thin film in the film formation system of the present invention will be described with reference to the flowchart 700. In step 710, the substrate is installed in the film forming system, the film formation of the thin film is started, and the thin film is continuously formed on the substrate. For example, the film forming system may include any film forming system shown in FIGS. 1 and 2 described above. The film forming system includes a process chamber in which the film forming process is performed, and a substrate holder coupled to the process chamber and configured to support the substrate. Next, in step 720, the film precursor is introduced into the film formation system. For example, the membrane precursor is introduced into the membrane precursor evaporation system coupled to the process chamber via the precursor vapor phase supply system. Also, for example, the precursor vapor phase supply system may be heated.

In step 730, the membrane precursor is heated to form the membrane precursor vapor phase. The membrane precursor vapor phase is then transported to the process chamber via the precursor vapor phase supply system. In step 740, the substrate is heated to a substrate temperature at which the membrane precursor vapor phase is sufficiently degraded, and in step 750, the substrate is exposed to the membrane precursor vapor phase. Steps 710 to 750 may be continuously repeated a desired number of times, thereby forming a metal film on a desired number of substrates.

In step 760, after film formation on one or more substrates, tray stacks 370, 370', 670, or one or more base or top trays 330, 340, or one or more stacks. Possible trays 640 are replaced on a regular basis and the amount of membrane precursors 350, 650 in each tray is replenished.

Although only certain embodiments of the present invention have been described in detail, it will be appreciated by those skilled in the art that in some embodiments many changes can be made without substantially departing from the innovative ideas and advantages of the present invention. Easy to understand. Therefore, all such modifications are within the scope of the present invention.

<figref num="1">It is a figure which shows the schematic diagram of the film formation system according to the Example of this invention.</figref><figref num="2">It is a figure which shows the schematic diagram of the film formation system by another Example of this invention.</figref><figref num="3">It is sectional drawing of the membrane precursor evaporation system by an Example of this invention.</figref><figref num="4">It is a perspective view of the membrane precursor evaporation system by another Example of this invention.</figref><figref num="5A">FIG. 5 is a cross-sectional view of a stackable upper tray used in the membrane precursor evaporation system according to an embodiment of the present invention.</figref><figref num="5B">It is a perspective view of the tray of FIG. 5A.</figref><figref num="6">It is sectional drawing of the bottom tray used in the membrane precursor evaporation system according to the Example of this invention.</figref><figref num="7">It is sectional drawing of the membrane precursor evaporation system by another Example of this invention.</figref><figref num="8">It is sectional drawing of the membrane precursor evaporation system by another Example of this invention.</figref><figref num="9">It is sectional drawing of the membrane precursor evaporation system by another Example of this invention.</figref><figref num="10">It is a figure which shows the method for operating a membrane precursor evaporation system.</figref>

Code description

1 film formation system 1, 10 process chamber, 20 substrate holder, 25 substrate, 38 pump system, 40 vapor phase precursor supply system, 50 film precursor evaporation system, 110 process chamber, 111 upper chamber compartment, 120 substrate holder, 121 Chamber temperature control system, 125 substrate, 130 gas phase dispersion system, 131 vapor phase dispersion plate, 132 vapor phase dispersion plenum, 133 processing zone, 134 orifice, 135 openings, 136 temperature control element, 140 vapor phase precursor supply system, 150 Membrane precursor evaporation system, 154 precursor heater, 156 evaporation temperature control system, 300 membrane precursor evaporation system, 310 container, 314 bottom, 318 central groove, 320 lid, 322 outlet, 330 base tray, 332 base outer wall, 334 base Tray opening, 340 upper tray, 342 upper outer wall, 344 inner wall, 342 upper outer wall, 350 membrane precursor.