AT510043T

Multi-tray film precursor evaporation system and thin film deposition system incorporating same

Abstract

By increasing the exposed surface area of ​​the solid precursor 350 as to increase the deposition rate, the conductance is coupled to the high vapor transport device (40, 140), the solid precursor vaporization apparatus for conductance is a higher plurality of trays ( 50, 150, 300, and 300 ') is described. Solid precursor vaporization apparatus having a plurality of trays and (50, 150, 300, 300 ') includes a base tray 330 with one or more upper trays 340. Each tray 330 and 340 is, for example, adapted to support a film precursor has 350 of a solid phase in powder form or solid tablet form. Additionally, each of the trays 330 and 340 is a film precursor 350 is the conductance in the upper film precursor 350 is heated during intended to provide a high carrier gas flow. For example, the carrier gas is within the stackable tray 340, the film precursor 350 to the inside direction of the upper, and flows vertically upward through the flow channel 318, the solid precursor evaporator (50, 150, 300, 300 ' ) flows through an outlet 322 of the.

Term

Term ended

Expired 29 November 2025, 0.8 years ago.

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46 members in 8 offices

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Priority claims
DocumentOfficeKindDate
99842004United States of AmericaA
2005043018United States of AmericaW

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US2006112882A1United States of AmericaA1
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WO2006057710A1World Intellectual Property Organization (WIPO)A1
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TW200625397ATaiwan Province of ChinaA
TW200629376ATaiwan Province of ChinaA
TW200629463ATaiwan Province of ChinaA
US2006185597A1United States of AmericaA1
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TWI278906BTaiwan Province of ChinaB
JP2007211346AJapanA
WO2007095407A1World Intellectual Property Organization (WIPO)A1
KR20070089785ARepublic of KoreaA
KR20070095914ARepublic of KoreaA
CN101065515AChinaA
CN101065516AChinaA
EP1863950A1European Patent Office (EPO)A1
TW200746303ATaiwan Province of ChinaA
JP2008522029AJapanA
JP2008522033AJapanA
TWI300956BTaiwan Province of ChinaB
KR20080102184ARepublic of KoreaA
US7459396B2United States of AmericaB2
US7484315B2United States of AmericaB2
US7488512B2United States of AmericaB2
TWI306642BTaiwan Province of ChinaB
CN101384749AChinaA
JP2009526134AJapanA
US7638002B2United States of AmericaB2
US7708835B2United States of AmericaB2
CN101065515BChinaB
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EP1863950B1European Patent Office (EPO)B1
AT510043TThis recordAustriaT
ATE510043T1AustriaT1
JP4960720B2JapanB2
JP4975639B2JapanB2
KR101172931B1Republic of KoreaB1
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CN101384749BChinaB
KR101194888B1Republic of KoreaB1
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