Method and device for sputtering of films

Description: TECHNICAL FIELD [Detailed description of the invention]

[Industrial application field] The present invention relates to a thin film spatling method and apparatus for spatting a thin film on a substrate with particles emitted from the surface of the cathode during glow discharge in a gas, and a spattaling layer arranged at intervals of 100 to 500 mm from the cathode. Alternatively, the possibility of a thin film solves the formation of a large-capacity, dense, homogeneous plasma.

[Previous technology] Coating the thin film with cathode spatling is more repetitive than other methods, such as the steam method, in any direction, eg, the possibility of a layer covering from top to bottom, as well as a mixture from the emitting cathode. And is a known method that excels in light transport of alloy compositions and in yet other advantages. However, typical diode sputtering is inadequate and slow to react due to the high gas pressure required to hold the glow discharge. Therefore, several modes have been proposed as to how to utilize the magnetic field to reduce the working pressure during spatting. These devices are based on Penning's 1939 Major United States Patent No. 2,146,025. One solution was proposed by Jay Clark in US Pat. No. 3,616,450. According to this patent, the electron passages in the device are formed in the form of a hollow cylinder in which the tubular hollow anode is located in an axial magnetic field and the emission cathode is housed coaxially with the anode outside the magnetic field. Elongated in the method. A better solution was the magnetron discharge under US Pat. No. 3,876,085 of JAE F Corbani in 1975 and US Pat. No. 4,166,018 of J.S. Chapin in 1979. According to these patents, a closed tunnel of magnetic field lines of magnetic field is formed, the path of electrons in this tunnel is elongated, ionization is increased and spatling is accelerated. You can also refer to the 1978 New York Academic Press's "Shin Film Process Is (Thin Film Method)", pages 76-140, by J. El Vuson and Double You Khan. It is necessary to bring charged particles with appropriate energy, such as positive ions, on the substrate at the same time as the compression material to cover the rows of technically important layers. This coating method was called ion coating and was required by steam sooner than by spatling. The sample is evaporated by an electron beam according to US Pat. No. 4,197,175, such as Mol et al., 1980. The ionic coating during magnetron spattering is known from Bee Zega's US Pat. No. 4,116,791 in 1978. The substrate is placed on an electrode that is supplied with a negative bias to the vacuum chamber, while the magnetron cathode is placed with respect to the substrate and supplied with a negative voltage to the vacuum chamber. The electrode bias on the substrate extracts the ions from the magnetron discharge and the ion coating is so achieved. According to US Pat. No. 4,426,267 of the 1984 Dublin Day Myunts, methods and devices for covering three-dimensional objects are protected. According to this method, the object directed to cover moves between the two magnetron cathodes, while a common glow discharge occurs in the space between these cathodes. A negative bias can be supplied to the substrate for ion coating. The drawback of the above-mentioned method of ion coating during magnetron spattering is that the ionization current extracted by the bias of the substrate drops during the increase in the distance of the substrate from the cathode of the magnetron and is usually 20-50 mm from the cathode. It drops to a value that is too low for ion coating at intervals of. Also, the plasma between the cathode pairs disappears at large intervals between these cathodes. Therefore, the methods described above cannot be used for ion coating of distant or large objects. At greater intervals from the magnetron cathode, the density of the plasma can be increased, for example, by an arc discharge in the hollow cathode from which electrons are extracted for noionization of the plasma. This device is protected by United States Patent No. 4,588,490, such as JAE JAE Quom, 1986. However, such a solution is complicated and increases the price of the entire device. A constant increase in the current of the particles charged on the substrate is observed by one of the planar magnetron types called "unbalanced" magnetrons (by B Window and N. Savides in 1986, J.Vac.Sci.Technol). See pages 196-202 of .A4). In this magnetron type, some lines of magnetic field radiating from the periphery of the emitting cathode point in front of the cathode are close to each other and decrease again at greater intervals. Substrates placed in a magnetic field in front of the cathode undergo greater collisions with more charged particles by a typical "equilibrium" magnetron. According to the copyright certificate of authors S. Kadrec, J. Muzir and Double You Day Myunts (Application No. 8657/88), it is higher on the substrate due to the application of a double side holding discharge. Ionization current can be achieved. In this device, a strong magnetic field is formed with the substrate in contact with the cathode, and the discharge generated between the cathode, the substrate and the anode is supported by both methods for the cathode and the substrate. The high induction of the magnetic field concentrated in the holding space between the cathode and the substrate ensures that the dense plasma is retained and the density of the ionizing current normally flowing through the substrate increases to a spacing of approximately 200 mm. Guarantee that it will not descend. The drawback of unbalanced magnetrons and double side holding discharges is that the densities of the plasma by the substrate and the ionizing currents on the substrate are not sufficiently homogeneous in the direction across the magnetic field lines of magnetic field. At its top the substrate is necessarily placed directly in a magnetic field, which is therefore affected by the magnetic properties of the substrate. Therefore, in practice the same device cannot be used for weak magnetic and ferromagnetic substrates . For example, as described by Rev. Sci. Instrument. (1973) No. 44, p. 726, by Earl Limpy Cheer, K. Earl Matsukenji, a relatively dense and homogeneous plasma becomes a multipolar magnetic field. It is known from the field of plasma physics that it can be retained. The plasma was generated by the emission of electrons from the incandescent cathode and at the same time held by a multipolar magnetic field formed by permanent magnets placed around the entire chamber in alternating directions. The purpose was to inspect a stable plasma with high spatial homogeneity in the central part where the magnetic field is very low. In addition to plasma generation by electron emission, gas, for example SF₆There is a known plasma generation method by the action of this decomposition product on the substrate for microwave absorption and etching of the substrate to decompose. The 1984 French Patents Nos. 2,547,961 and 2,547,962 and 1986 Nos. 2,583,250 of Wai Arnal, Jiei Perechie, C. Pomo and M. Pisiyo were also published in Appl. Phys. Iett. (1984). ) As described in Wai Arnal's paper on page 132 of No. 45, such microwave-generated discharges make the plasma more homogeneous and more sensitive to increase the homogeneity of the plasma-acting reaction gas, more homogeneous. It protects the methods and devices of associating the generation of groups with multiple poles that thus preserve the increased homogeneity and anisotropy of Etching. The purpose for which multi-pole retention is used as described above is other than retaining the plasma for ion coating during the thin film spatling that results in a DC glow discharge between the anode and the emitted cooling cathode. Follow the principles.

[Problems to be solved by the invention] In the above-mentioned prior art, there are problems as described individually for each solution and device. An object of the present invention is to provide a thin film spatling method and apparatus capable of achieving a dense and homogeneous plasma action on a medium substrate during thin film spatling in view of the above-mentioned problems of the prior art. is there.

[Means to solve problems] According to the present invention, the above object is held in a vacuum chamber accommodating a substrate, an anode, and a cathode in which magnetic lines of magnetic force of a magnetron type are formed above and a holding space is defined by the magnetic field inside. In a thin film spatling method in which a thin film is sputtered onto the substrate with particles emitted from the surface of the cathode during glow discharge in a gas or gas mixture under reduced pressure, the anode and the walls of the vacuum chamber are arranged outside. The holding space accommodating the substrate is defined by the magnetic field lines of the multipolar magnetic field, while the multipolar magnetic field is connected to and in the closed tunnel of the magnetic field lines of the magnetron type magnetic field above the emission cathode. Changes from the positive to the negative by the number of times of the boundary of the holding space and vice versa and the induction of the magnetic field is reduced in the direction from the boundary of the volume of the holding space and occurs between the holding magnetic field and the cathode and the anode. Due to the interaction of glow discharges, the retention space is solved by forming and retaining a vacuum in which the particles collide with the substrate and thin film. Plasma retention conditions, i.e. plasma retention, in several ways, i.e. varying the density of plasma around the substrate and the energy of charged particles of plasma, the intensity and shape of the retained multipolar magnetic field in relation to the anode and By changing in relation to / or the wall of the chamber and / or in relation to the cathode, it can be further changed by the polarity and intensity of the voltage guided between the anode and the auxiliary electrode passing through the holding space. it can. The collision of the substrate by the charged particles is held in several ways, i.e., the surface of the substrate and / or the thin film growing on the substrate is held at a potential selected in relation to the potential of the anode or the substrate and / or The growth thin film is charged at the stray potential, the substrate and / or the growth thin film is collided by the charged particles due to the difference between the plasma potential and the stray potential, and its energy and density are the plasma retention degree, gas pressure. And can be controlled in such a way that it is controlled by the output of the spattering discharge. The device for carrying out the method described above has a vacuum chamber in which the cathode of the spattering source, the holder with the substrate and the anode are located, while the walls of the vacuum chamber have a source of working gas and pump output. A DC or high frequency voltage source and a magnetic field source connected between the cathode and the anode exist outside the vacuum chamber, and the magnetic field source for forming a multi-pole holding magnetic field is a group of the magnetic field sources. Is housed around the entire holding space accommodating the substrate so as to alternate with adjacent groups of said magnetic field sources having similar poles in one direction and similar poles in the opposite direction. .. The magnetic field sources can be located indoors and / or inside the walls of the chamber and / or outside the chamber and / or behind the cathode, while the magnetic field source group located behind the cathode is said to be said. It is placed within the same central closure curve to form at least one closure tunnel of magnetic field lines of magnetic field above the surface of the cathode. DC or high frequency voltage U_SThe voltage source is connected between the holder of the substrate and the anode (3), or the holder of the substrate is electrically connected to the anode across a resistor R of any value from 0 to 0. To allow the position of the anode to change in relation to a magnetic field, the device comprises a sliding anode extension piece made of a conductive material that is electrically connected to the anode. Further, at least one auxiliary electrode is housed in the holding space, and a DC voltage U connected to the auxiliary electrode by one pole and to the anode by the other pole outside the chamber._EChanges in plasma retention can be achieved so that the voltage sources of the above are arranged.

[Action] The methods and devices of the present invention increase the density and homogeneity of ionization currents and electron flows on the substrate and allow ion coating during thin film spatling and by stray potential, the substrate being magnetron-type magnetic field lines above the emission cathode. The direction of the magnetic field lines arranged in the holding space defined by the magnetic field lines of the multipolar magnetic field including the closed tunnel and at the boundary of the holding space is changed by the direction change from the positive electrode to the negative electrode and vice versa. The application of the methods and devices according to the invention can achieve the action of dense and homogeneous plasma on the substrate during thin film spatling. Ion coating layers can be achieved on substrates that are accommodated at various distances from the cathode, typically 30-500 mm. The density of the ion current on the substrate is 2 to 50 mA · cm on the cathode.^-2Depending on the current density of, i.e. at intervals of 200 mm and above from the cathode, as well as 0.1 to 10 mA · cm^-2The value of is usually achieved. At the same time, plasma homogeneity can be achieved such that the ionization current is constant with a tolerance of ± 10% in a typical length of 100-200 mm, i.e., at intervals of 100-250 mm from the cathode, for example. Such homogeneous ion collisions (bomberdment) span the entire surface of the substrate, i.e. layers (thin films) with the above-mentioned properties that are also the same for substrates in molded or relatively complex 3D objects. Can be formed. 2000kg mm^-2From 2600kg mm^-2To form a compact titanium nitride layer that has a micro-hardness and whose properties, such as structure, stress, etc., can be controlled by the magnitude of the bias on the substrate, eg -20 to -150 V. Can be done. With substrate bias, a compact titanium nitride layer can be coated with a stray potential, eg -20 to -45 V, without the use of a power source, while this stray potential can be adjusted by the degree of plasma retention. it can. In this way the texture of the layers can be similarly controlled from (200) to (111), while the stresses of these layers are low in the range of 2-3 GPa. The advantages of the method and device are also especially low pressure, at least 2.10^-2Operating pressure in a wide range up to Pa. Yet another advantage is that it is possible to coat the non-conductive layer by DC sputtering or to coat the layer on the non-conductive substrate by using the stray potential on the substrate surface. The main advantage of the device is that the substrate is placed in a space where the magnetic field is weak and therefore both magnetic and non-magnetic substrates can be coated in the same device.

[Example] Hereinafter, an example of an apparatus for carrying out the method according to the present invention based on the subject matter of the present invention will be described. Figure 1 illustrates a device with two permanent magnets behind a circular cathode. This device consists of a vacuum chamber 1 made of a soft magnetic material, which has a tubular shape with a horizontally housed axis and at the same time forms an anode 3. Vacuum chamber 1 includes a working gas inlet 8 and a pump outlet 9. A flat circular cathode 2 made of titanium is placed coaxially with the vacuum chamber 1 at the same height as the vertical wall of the vacuum chamber 1. The circular holder 4 of the substrate 5 is fixed coaxially with respect to the cathode 2, and the holder 4 is fixed adjustablely at intervals of 30 to 300 mm from the cathode 2. Cathode voltage U_KVoltage source 6 and board voltage U_SThe voltage source 7 of the above is arranged outside the vacuum chamber 1. The voltage source 6 is a DC voltage source of zero to 1000 V, is connected to the cathode 2 with a negative electrode, and is connected to the vacuum chamber 1 with a positive electrode. The zero to 1000V DC voltage source 7 is connected to the holder 4 of the substrate 5 with a negative electrode and to the vacuum chamber 1 with a positive electrode. One part of the holding multipolar magnetic field source is permanent magnets 10,11,12, and one part is two electromagnets 15,17. Permanent magnets 10, 11 are housed and fixed in the inner mantle of vacuum chamber 1 in groups 22, 23 forming an even number, eg, eight rows, parallel to the axis of the device, while the directions of all magnets in each group. The attachments are identical and have radial orientations, and adjacent groups 22, 23 have opposite magnet orientations. Therefore, the magnet 11 having the cathode 2 is doubled in one direction. Permanent magnets 12 are further housed behind the substrate in a vertical wall inside the vacuum chamber and oriented parallel to the axis of the device and their magnetic fields connect with the magnetic fields of magnet groups 22, 23 on the mantle of vacuum chamber 1. Will be done. The device is further equipped with two electromagnets to form a holding magnetic field. The first electromagnet is a current source I arranged coaxially with the cathode 2 behind the cathode 2.₁It consists of a coil 15 connected to and a core 16 made of mild steel inserted into the carrier of the first coil 15. The second electromagnet is located behind the cathode 2 and around the first coil 15 coaxially with the cathode, current source I₂Consists of a hollow core 18 made of mild steel 18 in the form of a tubular ring that fills the space between the second coil 17 and the first and second coils connected to and is connected to a core 16 and a plate 19 made of mild steel. .. The entire structure, consisting of cathodes 2, first and second coils 15 and 17, and magnetic circuits 16, 18, 19 is packed and insulated ring 21 by flange 20 at the edge of the circular notch in the vertical wall of vacuum chamber 1. Attached across. Current source I₁, I₂Further, neither a gas filling and suction device, a pressure gauge and a cathode, a vacuum chamber and a means for cooling the substrate, nor a means for heating the substrate are shown for clarity in the drawings. If a method of spattering a thin film requires, the device can also include a conventional diaphragm that slides between the cathode and the substrate. The device operates as follows. Overall pressure P in which working gas or gas mixture, eg argon and nitrogen mixture, is required through inlet 8 in vacuum chamber 1._TFilled with. The glow discharge is then ignited at the same time as the cathode 2 with the vacuum chamber 1 used as the anode 3. This discharge is conditional and affected by the holding multipolar magnetic field, the lines of magnetic force 13 and 14 enclosing the holding space on the holder 4 in which the substrate 5 is housed. The magnetic field lines of the multipolar magnetic field at the boundary of the holding magnetic field change direction at various points for the alternating magnet groups 22, 23. Therefore, the magnetic field strength drops rapidly from the edge toward the center of the holding space. The shape of such a magnetic field affects the plasma by the magnetic pressure from the edge toward the center of the holding space, and here holds a dense plasma. The magnetic induction at the boundary of the holding space is usually 10 mT to 50 mT or more, and usually zero to 2 mT in the intermediate region containing the substrate. In order to completely hold the plasma, it is necessary that the channel does not extend from the intermediate region of the holding space to the anode with a magnetic induction magnitude lower than the minimum magnetic induction magnitude, which is usually 1 mT to 10 mT. The presence of such channels is only partial retention and reduces plasma density. Discharge stability may also be reduced as further explained in the example of FIG. Part of the holding multipolar magnetic field is also the magnetic field above the cathode 2 formed by the coils 15 and 17 located behind the cathode and the magnetic circuits 16,18,19. Coil 15 current I₁Formed a closed tunnel of magnetic field lines 14 above the cathode and current I of the second coil 17₂Form a magnetic field in which the lines of magnetic force are connected from the edge of the cathode to the lines of magnetic force formed by the permanent magnet 11. Polarity and current I₁And I₂Changes in the magnitude of the magnetic field formed by the coils 15 and 17 can change the shape and intensity of the magnetic field and can affect the retention of the plasma, as described in the example of FIG. Therefore, a dense plasma arises from the interaction of the discharges occurring between the holding multipolar magnetic field and the cathode 2 and anode 3 and is held in the holding space. Particles from this plasma, especially electrons and positive ions, affect the properties of the layer that is colliding with and growing on the substrate. If the substrates are conductive, then these substrates will have the voltage U from voltage source 7._SThe type and energy of the particles to which and collide can be varied in such a way as to affect yet other conditions of layer growth. -20 to -100V voltage U_SDue to such effects, there is sufficient communication during layer deposition. Higher voltage U_SIon etching of substrate 5 can be achieved by dust removal, usually at least -200 to -1000 V. In addition, the characteristics of the layer can be affected by changing the distance d between the cathode and the substrate. In the device according to Fig. 1, the pressure P_TBias, eg U_SIon current flowing through the substrate at = -100V I_SWas found to cover only ± 10% of the average value, i.e. the entire range of the distance d between the cathode and the substrate of 80-220 mm. It is an important advantage of the imparted method and device to confirm the high homogeneity of the plasma in the holding space, and can be utilized to influence the properties of the layer. FIG. 2 illustrates a device with one rectangular cathode and anode extension piece. The vacuum chamber 1 with the working gas inlet 8 and the pump output 9 has a parallelepiped shape. The anode 3 is insulated and housed in the lower wall of the vacuum chamber 1 and in parallel with it in the form of a quadrilateral made of a conductive material. The cathode 2 is arranged parallel to the vertical wall of the vacuum chamber 1 and has a rectangular shape. The flat holder 4 of the substrate 5 is arranged parallel to the cathode 2. Cathode voltage U_KVoltage source 6 and board voltage U_SThe voltage source 6 of the above is housed outside the vacuum chamber 1. The holding multipolar magnetic field source is formed by permanent magnets 10, which are holes assembled into groups 25,26,30 that are electrically connected to the anode 3 and housed in a plane parallel to the plane of the cathode 2. Partially attached around the holding space on the empty magnet support 24, and in these groups 25,26,30 all magnets are oriented towards or in the opposite direction to vacuum chamber 1, while adjacent. The orientations of groups 25 and 26 are opposite to each other. Permanent magnets 10 are further placed behind cathode 2 in two groups 27,28. The first group 27 has a rectangular base and is located behind the middle part of cathode 2, and the second group 28 is located behind the entire circuit of cathode 2. The orientations of the magnets in both groups 27 and 28 are opposite and the magnetic field lines 29 of the magnets in group 2 28 are connected to the lines of magnetic field in group 30 closest to the magnets located on the support 24 of the magnet. The device also comprises a movable anode extension piece 31 that is electrically connected to the anode 2. The extension piece 31 consists of a rectangular frame 32 having a size larger than that of the cathode 2 and a piston 33 that passes behind the cathode 2 through the wall of the vacuum chamber 1. The frame 32 is placed in a plane parallel to the plane of the cathode by a piston 33 that traverses the extension piece 31 across the magnetic field lines 29 around the cathode 2, but the plane of the frame is in or in front of the plane of the cathode. It can be placed in various positions placed in or behind it. Similar normal elements are not shown in Figure 2 for clarity in the drawing, in view of Figure 1. Cooling of the anode 3 with the anode extension piece 31 and the magnet support 24 at its top is not considered here. The device according to Fig. 2 operates in the same manner as in Fig. 1. However, the holding magnetic field of FIG. 2 is selected and fixed by the layout of the permanent magnets 10, which are also used to form the magnetic fields 14,29 above the cathode. Control of the degree of plasma retention in the holding magnetic field can be carried out in this device by the movement of the anode extension piece 31 across the boundary of the holding space around the cathode 2, i.e. across the magnetic field lines 29. The highest plasma retention is achieved by moving the extension piece 31 out of the holding space behind the plane of cathode 2. During the sliding of the extension piece 31 into the holding space, i.e. to the region with the lower induction of the magnetic field, more electrons and ions from the holding space were recombined and made of the entire holding space. It also collides with the anode extension piece 31, which increases the plasma density around the substrate. As a result, the motion of the anode extension piece 31 actually changes the position of the anode in relation to the magnetic field. By holding the substrate surface at a selected potential, it is possible to influence the types of charged particles that collide with the substrate, their number and energy. DC or high frequency voltage U to conduct the substrate and conduct the layers_SVoltage source 7 can be used. High frequency voltage U for non-conductive substrates and / or non-conductive layers_SIt is necessary to use the voltage source 7 of. However, if the voltage source 7 is removed, the substrate with the growing layer is at stray potential and due to the difference between the plasma potential and the growing potential, the growing layer becomes accelerated positive ions. At the same time, they are collided by the same amount of electrons. The plasma density, which defines the magnitude of the stray potential and the flux density of the collision particles, is first spattered by the degree of plasma retention, for example by the movement of the anode extension piece 31, and then by the magnitude of the gas pressure. Depending on the output of the emission, it can be affected by varying the distance of the substrate holder from the cathode, if desired. This method, which uses the stray potential of the substrate, has the advantage, first of all, that it is similarly suitable for non-conductive and conductive substrates and conductive and non-conductive layers. Figure 3 shows a device with four cathodes and auxiliary electrodes. The chamber 1 of the device has a vertically arranged octagonal shape and is made of a non-magnetic conductive material, such as non-magnetic stainless steel, and at the same time it is the anode 3. Within the axis of the chamber 1, a circular holder 4 of a substrate 5 that can be rotated by an engine 34 located below the bottom of the chamber is housed from below. Holder 4 is attached to chamber 1 across resistor R35, the magnitude of which is adjustable from 00 to 0. On the four vertical walls of the chamber are four rectangular cathode structures 37 by flange 36 90 It is fixed at. Each cathode structure 37 consists of a rectangular cathode 2, a magnetic rear plate 38 and permanent magnets 10 placed in two groups 27,28, the group 27 being placed behind the center of the cathode and a second group 28. Is placed behind its perimeter, similar to the device according to FIG. In addition to the magnets in the cathode structure 37, the retaining multipolar magnetic field sources form a vertical row of equally oriented magnets outside the chamber 1, i.e., on the mantle of the chamber 1, in a nearly regular and adjacent manner. Permanent magnets 10 arranged in oppositely oriented groups in relation to the rows to be, partially magnets 10 are housed in chamber 1 without a foundation and are alternately oriented in a checkboard arrangement. The magnetic field of the magnet on the edge of the mantle is connected to the magnetic field on the edge of the base. At the same time, these points 39 on the mantle around the cathode where equally oriented magnets are placed in relation to the second group 28 of magnets behind the cathode 2 in the case of a perfectly regular arrangement of magnets 10. Is left empty. The device is further equipped with eight auxiliary electrodes 40, the surface of which is conveniently formed of the material of the cathode 2. These electrodes 40 pass through a holding space parallel to the axis of chamber 1, while two auxiliary electrodes 40 are always located near one cathode 2, i.e. at the opposite edge of cathode 2. All electrodes 40 are insulated and voltage U located outside the chamber_EThe voltage source 41 is derived to the base of chamber 1 and supplies a DC voltage to chamber 1, for example in the range of -200V to 200V. Elements similar to those in FIGS. 1 and 2 are not included in FIG. 3 for clarity. Due to the higher outlet, it is necessary to use more cooling of the auxiliary electrode 40 (not shown). The operation of the device according to FIG. 3 is similar to the operation of the device according to FIGS. 1 and 2. However, in the device according to FIG. 3, the substrate can be rotated on the rotating holder 4 by the engine 34. At the same time, the four cathodes are spatulad so that the layers on the substrate grow from all sides at the same time. Holder 4 of substrate 5 is electrically connected to anode 2 across resistor R35, which is adjustable in the range 00 to 0. The resistance value R = 0 holds the substrate at the stray potential, and the resistance value R = 00 holds the holder of the substrate at the anode potential. Therefore, the magnitude of the resistor R can change the bias of the substrate and the entire current flowing through it. The degree of plasma retention in the retention space is the polarity and voltage U on the auxiliary electrode 40._EIt is influenced by the size of. Electrons from the plasma are negatively biased to the auxiliary electrode 40 when a sufficiently high negative voltage associated with the anode 3, eg, in the range of -20V to -200V and a higher voltage is guided to the electrode 40, if necessary. Therefore, it is rejected and the degree of plasma retention is high. Voltage U on electrode 40_EWhen the value of is gradually changed to a positive voltage, for example from a value of -20V to, for example, a value of + 50V, the electrode 40 removes the role of the anode, and the plasma on the electrode 40 is recombined and the plasma in the holding space. The degree of retention of is reduced. Therefore, the density of plasma around the substrate can be reduced and thus affect the amount of charged particles that collide with the substrate. An important advantage of the device according to FIG. 3 is that the uniform velocity of the layer covering the substrate is actually due to the regular layout of the large cathode 2 around the substrate 5 and for the rotation of the holder 4 from all directions. To be achieved. This allows for the homogeneous properties of the layers (thin films) coated on all surfaces of the substrate, along with the homogeneity of the plasma around the substrate, which is guaranteed by multipolar plasma retention. It is of particular importance for thin films whose properties depend on the deposition rate as well as the energy and density of the colliding particles, such as titanium nitride thin films with defined stresses and defined orientations of crystallite. Fig. 4 shows the substrate bias U_SIonization current U of the device according to FIG. 1 with = -100V_S-Current I of the second coil 17₂An example of the characteristics of is shown. Yet another example here is the current I_SDrifting potential 43a, 43b-Uf with = 0A₁-Current I₂Shows the characteristics. The third curve is the constant cathode voltage U_KConstant current I at cathode 2 due to = -600V_KCurrent I of first coil 15 to achieve = 1A₁-Current I of the second coil 17₂The characteristics of 44a and 44b are shown. The following constant parameters were retained throughout the measurement of properties 42a, b; 43a, b; 44a, b. That is, they have a distance of the substrate 5 from the cathode 2 = 200 mm, an argon pressure of 0.1 Pa, and a cathode voltage of U._K= -600V and cathode current I_K= 1A. Fig. 5 shows the voltage U of the board._SIonization current I of the substrate of the device according to Fig. 1 at -100V_S-Pressure P_TAn example of the current characteristic 45 of is shown. Figure 5 shows the current I_SDrifting potential of substrate 5 at = 0A-pressure P_TThe characteristic 46 of is shown. Both characteristics 45 and 46 have the same constant parameters, that is, the voltage U of cathode 2._K= -600V, cathode current I_K= 1A, spacing of substrate 5 from cathode d = 200mm and current I of second coil 17₂Measured by = + 10A. The characteristics shown in Fig. 4 are examples of how the energy and density of particles colliding with the substrate 5 of the device according to Fig. 1 can be controlled by controlling the shape and intensity of the retained multipolar magnetic field. Shown. Current I as far as this device is concerned₂Polarity is positive and current I₂Is + 2.5A, that is, larger than the interval A in Fig. 4, and the lines of magnetic force from the edge of cathode 2 exit toward the holding space as shown in Fig. 1. Therefore, these lines of magnetic force are rejected by the magnetic field of the double magnet 11. Current I₂If the polarity of is negative or positive but + 1A, i.e. lower than the spacing C in FIG. 4, the lines of magnetic force at the edge of cathode 2 are directed in the opposite direction, i.e. from the holding space towards cathode 2. The lines of magnetic force from the double magnet 11 are then, on the contrary, connected to the lines of magnetic force directed at the edge of the cathode 2. +₁Current I from A to + 2.5A₂At the interval B, the magnetic field between the edge of the cathode 2 and the double magnet 11 is very low, about 10 mT or less. The multi-pole holding magnetic field is therefore impaired in region C, the plasma holding is not only weak, but also at low pressures, eg 0.1 Pa or less, and the discharge is at all, i.e. any magnitude of the current I1. It does not occur in 1 coil 15. A stable discharge at a low pressure, eg 0.2 Pa or less, requires a multipolar magnetic field to be connected to the cathode magnetic field, while the directions of both magnetic fields are parallel or parallel as in interval A in FIG. It can be non-parallel as at interval C. Curves 42a and 42b show a constant voltage U on the substrate at both intervals A, C._SFor example, it is shown that the flux density of ions colliding with the substrate can be controlled by -100V. Curves 43a and 43b show the board zero total current I_SAccording to the stray potential U of the substrate at both intervals A and C as well._f1Is shown to be able to be controlled. Curves 44a and 44b show the current I of the first coil 15.₁By the current I₂Serves as an example of how the discharge voltage and current can be kept constant, although they vary over a wide range of limits. These curves 44a, 44b also show the current I₂Indicates that the magnetic fields of the coils 15 and 17 need to be directed relative to each other, even if the polarities of are positive or negative. Curves 44a and 44b show zero current I because the magnet 11 is doubled.₂Not symmetrically positioned in relation to I₂Similarly according to = 0A, the multipolar magnetic field is closed by the magnetic field lines radiated from the magnet 11 to the cathode 2. The characteristic shown in Fig. 5 is the pressure P_TThe possibility of controlling the amount and energy of particles colliding with the substrate in the device according to FIG. 1 is shown by changing the whole. Substrate ionization current I_S-Pressure P_TThe characteristic curve 45 is the cathode current I of 20 to 50%._KContains high ionization current I_SIn a wide pressure range, at least 0.04 to 5 Pa, the voltage U on the substrate_SFor example, -100V indicates that it can be extracted from the cathode 2 onto a substrate 5 at intervals of, for example, 200 mm. Pressure P_TAt the same time, as shown in curve 46, the stray potential U of the substrate is in the range of -5 to -45V._f1Affects. Stable discharge pressure 2/10^-2It was observed up to Pa. The thin film spattering method according to the present invention will be described with respect to an example of a titanium nitride layer formed in the apparatus shown in FIG. Example 1 Board 5 made of high speed steel placed in board holder 4 is 10^-2It was heated to a temperature of 500 ° C at a pressure lower than Pa. Voltage U_S= -600V on board 5 for 120 seconds and voltage U_K= -500V was applied to cathode 2 at an argon pressure of 0.09 Pa and ion-washed in this way. Next, the titanium nitride thin film has a cathode voltage of U._K= -600V and cathode current I_KSpattared in an argon and nitrogen mixture for 90 minutes at a total pressure of 0.09 Pa at 5A. The substrate 5 is arranged at a distance of 200 mm from the cathode 2 and has a bias U._S= -100V was applied. Coil 15 current I₁= 0.9A and coil 17 current I₂= 4A causes the board to have a total current I_SIons from a plasma with = 610 mA were fully impacted during the growth of the thin film. The thin film (layer) produced by this method has a thickness of 3.2 μm and a microhardness Witzkers HV = 2590 ± 90 kg · mm showing a compact microstructure consisting of a thin film and bright gold paint.^-2Had. The titanium nitride thin film produced by a conventional magnetron that spats without the action of a multipolar magnetic field due to the substrate spacing of 150 mm from the cathode at an overall pressure of 5 Pa is red, porous and the low density of plasma by the substrate and Same bias U_SLow ion current I due to = -100V_SVickers hardness related to HV = 214Kg mm^-2Have. X-ray analysis of the titanium nitride layer produced by the method according to the invention under the specific conditions described above shows a plane parallel to the surface of the sample (111), a.₁₁₁From = 0.4299nm, plane (200), a₁₁₁The value of the grid parameter defined from = 0.4256 nm, that is, half the width β of the deadline.₁₁₁= 0.46 °, β₂₀₀= 0.56 °, β₂₂₂= 1.0 °, micro stress e = (7.3 ± 1.1) 10^-3And a small stress δ = 6.4 GPa is applied. The texture of the coated thin film is clustered in an orientation (111) parallel to the surface of the sample. All these values are very close to those achieved by a titanium nitride thin film coated by arc evaporation or low voltage electron beam evaporation under similar coating conditions. With the exception of tissue, they are also close to the values achieved during normal magnetron coating, but the distance between the substrates from the cathode is substantially shorter, typically 50 nm. Example 2 The titanium nitride thin film has a structure (220) and is U._SIt is manufactured in the same manner as in Example 1, except for the substrate bias of = -50V, while the other physical properties of the thin film are not significantly changed compared to Example 1. Example 3 The titanium nitride thin film is in the same manner as in Example 1, but with a voltage U._SDue to the interruption of the voltage source of, the stray potential U in relation to anode 3_f1Manufactured at -31V. The thin film has a thickness of 5.5 μm and a microhardness HV = 2070 ± 80 kg mm during 120 minutes of deposition.^-2As a result they are compact again. X-ray graph analysis has the following results: a₁₁₁= 0.4255nm, a₂₀₀= 0.4243nm, β₁₁₁= 0,23 °, β₂₀₀= 0.27 °, β₂₂₂= 0.51 , e = (4.0 ± 0.5) 10³, δ = 2.9 GPa is given. The thin film has a reduced texture (111) + (200), while the corrected reflection intensity I₂₀₀/ I₁₁₁The relationship is 1. These properties are unusual for titanium nitride coated by other physical methods, including conventional spatling, and due to low stress in the thin film and low energy of collision ions and electrons with sufficient current density. It shows less damage to the crystal lattice associated with simultaneous collisions. Combined with a sufficiently high current density, these thin films have very good useful properties when applied to a cutting tool with high adhesion to the pad. Example 4 This embodiment describes the control of the thin film structure by controlling the magnitude of the stray potential. The same method as in Example 3 is the current I₂= 10A and current I₁Used at = 2A, substrate stray potential is U_f1= -45V is increased and the coating thin film is I₂₀₀/ I₁₁₁It had a polarity orientation (111) due to the relationship of = 0.2. Bias to -24V U_f1Decrease in current I₂= 3.8V and I₁Achieved by varying = 1.6V and polarity orientation is opposite relationship I₂₀₀/ I₁₁₁It was changed to (200) by = 5. Other parameters of the thin film, namely microhardness, stress and grid parameters, remained virtually unchanged. It can be expected that thin films with a controlled texture will be important in optimizing the efficiency of coated cutting tools for a variety of cutting conditions. The method according to the invention is similar to forming a titanium nitride decorative gold layer on a non-conductive substrate such as glass or porcelain by the method described in Example 1 with modifications according to Examples 3 and 4 by omitting ion cleaning. Can be used for. Instead of ion cleaning, a titanium layer spattering to a thickness of up to 10-200 nm can be selectively introduced in an atmosphere of nitrogen-free argon for increased thin film adhesion. Therefore, the apparatus according to FIG. 3 can be conveniently used when the thin film can be uniformly coated from all directions at the same time. The structure of the apparatus according to the present invention can be changed to various modes depending on the type and size of the substrate, the material of the coating layer, the characteristics of the thin film, and the like. First, various shapes of the cathode, that is, not only flat, but also, for example, tubular, hollow, conical and the like can be used as well. Various modes of controlling the degree of plasma retention are thus connected, for example, by varying the magnetic field, by auxiliary electrodes of various shapes and types and with the anode, as well as, for example, to an external voltage source. It can be connected by applying the attached sliding extension piece. These elements can be combined with various modes of voltage control on the substrate. It can accommodate magnets to form a multipolar magnetic field in various modes. The magnet can be oriented not at right angles to the wall of the chamber but parallel to it. An important change is the choice of orientation of the magnet to the edge of the cathode in relation to encapsulating the magnet in the room. This orientation can be parallel and non-parallel, while the retained plasma has different parameters in both cases (see, for example, curves 42a and 42b, 43a and 43b).

[Effect of the invention] As described above, according to the present invention, a dense and homogeneous plasma action is achieved on the substrate during thin film spatling, and an ion-coated thin film is placed on the substrate accommodated at various intervals from the cathode. It is possible to provide a thin film spacing method and an apparatus for carrying out this method, which have the effect of being able to achieve the above.

[Simple explanation of drawings]

Figure 1 shows a schematic showing a device with two electromagnets behind the cathode, FIG. 2 is a schematic diagram showing a device with a rectangular cathode and anode extension piece, FIG. 3 is a schematic diagram showing a device with four cathodes and auxiliary electrodes. Fig. 4 shows the ionization current I of the device according to Fig. 1._S-Current I₂Characteristics, stray potential U_f1-Current I₂Characteristics and current of the first coil I₁-Current I₂Characteristic diagram showing the characteristics, Fig. 5 shows the ionization current I of the substrate of the device according to Fig. 1._SAnd stray potential U_f1-Overall pressure P_TIt is a characteristic diagram which shows the characteristic of. In the figure, reference numeral 1 is a vacuum chamber, 2 is a cathode, 3 is an anode, 4 is a holder, 5 is a substrate, 6 is a cathode voltage source, 7 is a substrate voltage source, 10,11,12 are permanent magnets, and 15,17 are permanent magnets. An electromagnet (coil), 31 is an anode extension piece, and 40 is an auxiliary electrode.