Method and device for sputtering of films.

0001The invention concerns method and device for layer sput­tering on substrates with particles sputtered from cathode's surface during glow discharge in gas and solves formation of dense homogeneous plasma in large volume with possibility of sputtering layers placed in distances 100 till 500 mm from ca­thode.

0002Coating thin layers by cathode sputtering is a well-known process, eminent to other methods, e.g. to steaming, in high reproducibility, possibility of layer coating in arbitrary di­rection, e. g. from above downwards, further in light transfer of mixture and alloy compositions from sputtered cathode into layer and in further advantages. However, classic diode sput­tering is inefficient and slow-acting owing to high gas pressu­res necessary for glow discharge holding. Therefore there have been proposed some modes, how to utilize magnetic field for re­duction of working pressure during sputtering. These systems are based on Penning's principal American patent No. 2,146.025 of 1939. One solution was proposed by J. Clerk in American pa­tent No. 3,616,450. In accordance with this patent path of elec­trona in device is elongated in such a way that cylindrical hol­low anode is placed in axial magnetic field and sputtered catho­de is formed in shape of a hollow cylinder, accommodated coaxi­ ally with anode, outside magnetic field. Howver, a more suc­cessful solution was magnetron discharge in accordance with American patents of J. F. Corbani No. 3,878.085 of 1975 and J. S. Chapin No. 4,166.018 of 1979. In accordance with these patents a closed tunnel of magnetic field's lines of force is formed, path of electrons in this tunnel is elongated, ioniza­tion is increased and sputtering is accelerated. See also pub­lication of J. L. Vossen and W. Kern : Thin Film Processes, pp. 76-140, Academic Press, New York, 1978.

0003For coating a row of technically important layers it is necessary at the same time with condensing material to bring on substrate also charged particles with suited energy, e. g. positive ions. This method of coating is called ionic cladding and sooner than with sputtering it was used with steaming. An example is evaporating with electronic beam in accordance with American patent Moll et al. No. 4,197.175 of 1980. Ionic clad­ding during magnetron sputtering is well-know from American pa­tent of B. Zega No. 4,116.791 of 1978. Substrate is placed on an electrode that is fed with negative bias against vacuum cham­ber, whilst magnetron cathode is placed against substrates and is fed with negative voltage against vacuum chamber. Bias of electrode with substrates extracts ions from magnetron dischar­ge and ionic cladding is so attained. In accordance with Ameri­can patent of W. D. Münz No. 4,426.267 of 1984 method and devi­ce for coating three-dimensional bodies are protected. In accor­dance with this method, bodies intended for coating move between two magnetron cathodes, whilst in space between these cathodes there burn a common glow discharge. It is possible to feed sub­ strates with negative bias for ionic cladding.

0004A deficiency of above-mentioned methods of ionic cladding during magnetron sputtering is that ionization current extrac­ted by substrates' bias quickly drops during increase of sub­strate's distance from magnetron's cathode and usually yet in distance 20 to 50 mm from cathode it drops on too low values for ionic cladding. Also plasma between pair of cathodes extin­guishes with large distances of these cathodes. Therefore it is not possible to use above-mentioned methods for ionic cladding of remote or large-size objects. It is possible to increase plas­ma's density in greater distances from magnetron's cathode e. g. by means of arc discharge in a hollow cathode, from which elec­trons are extracted for plasma's ionization. This system is pro­tected by American patent of J. J. Cuom et al. No. 4,588.490 of 1986. However, such a solution intricates and raises the price of the whole device.

0005A certain increase of charged particles' current on substra­tee is observed with one of planar magnetrons' types called "un­balanced" magnetron, see B. Window and N. Savvides, J. Vac. Sci. Technol. A4, 1986, pp. 196-202. In this magnetron's type some lines of force of magnetic field that radiate from periphery of sputtered cathode point before cathode, approach to each other and in greater distances recede from each other again. Substra­tes placed in magnetic field before cathode are subjected to a greater bombardment by charged particles than with classic "ba­lanced" magnetron.

0006It is possible to attain higher inization currents on sub­strates than with unbalanced magnetron with application of doub­ le-sided held discharge in accordance with Czechoslovak au­thor's certificate No.      (PV 8659-88) of authors S. Kadlec, J. Musil and W. D. Münz. In this device there is for­med an intensive magnetic field that connects cathode with sub­strates, and discharge burning between cathode, substrate and anode is held both by processes on cathode and on substrates. High induction of magnetic field concentrated in holding spa­ce between cathode and substrates guarantees holding dense plasma and guarantees that density of ionization current flo­wing on substrates practically does not drop with cathode's in­creasing distance till a distance of order 200 mm.

0007A deficiency of unbalanced magnetron and double-sided held discharge is that plasma with substrates and density of ioniza­tion current on substrates are not sufficiently homogeneous in direction across magnetic filed's lines of force. On the top of its substrates are inevitably placed directly in magnetic field and this field is therefore affected by magnetic properties of substrates. Consequently, it is not possible to use the same device practically for weak magnetic and ferromagnetic substra­tes.

0008It is well-know from field of plasma physics that relati­vely dense and homogeneous plasma can be held by magnetic mul­tipolar field, as stated e. g. by R. Limpaecher, K. R. Mac Ken­zie, Rev. Sci. Instrum. <u style="single">44</u> (1973), p. 726. Plasma was generated in such a system by emission of electrons from glowing cathodes and at the same time was held by magnetic multipolar field for­med by permanent magneta placed around the whole chamber with alternating orientation. Purpose was to examine steady plasma with high space homogeneity in central part where magnetic fi­eld is very low.

0009Besides plasma generation by emission of electrons there is well-known method of plasma generation by absorption of mi­crowave output in order to decompose gases e. g. SF₆ and acti­on of this decomposition's products on substrates for their et­ching. French patents Nos. 25 47 961 and 25 47 962 of 1984 and No. 25 83 250 of 1986 of authors Y. Arnal. J. Pelletier, C. Po­mot and M. Pichot protect methods and devices, how to link such a microwave generated discharge to multipolar holding a more homogeneous and senser plasma in order to increase homogeneity of plasma's affecting reactive gas, a more homogeneous genera­tion of radicals and therefore increase of etching's homogenei­ty and anisotropy, as stated also in work of Y. Arnal et al., Appl. Phys. Lett. <u style="single">45</u> (1984), p. 132. Purpose, for which multi-­polar holding is used in above-mentioned cases, is, consequent­ly, on principle another than holding plasma for ionic cladding during layer sputtering, where direct-current glow discharge burns between anode and sputtered cold cathode.

0010The presented invention solves a method of layer sputte­ring on substrates by particles sputtered from cathode's surfa­ce during glow discharge burning between cathode and anode in gas or in gas mixture under reduced pressure held in vacuum chamber containing substrates, cathode and anode, with holding space defined by means of magnetic field and closed tunnel of magnetron-type magnetic field's lines of force, formed above cathode. Substance of the invention consists in that holding space containing substrates, outside which there are placed anode and walls of vacuum chamber, is bounded by magnetic mul­tipolar field's lines of force, whilst magnetic multipolar fi­eld contains a closed tunnel of magnetron-type magnetic field's lines of force, and its direction changes by turns on boundary of holding space from positive polarity into negative one and vice versa, and in direction from boundary to volume of holding space induction of magnetic field is reduced and owing to inter­action of holding field and glue discharge, burning between ca­thode and anode, there is formed and held in holding space a plasma, by particles of which substrates and layers are bombar­ded.

0011It is possible to change plasma's holding degree in several ways: by changing intensity and/or form of holding magnetic multipolar field with regard to anode and/or with regard to chamber's walls and/or with regard to cathode, which changes plasma's density around substrates and energy of plasma's char­ged particles, further by polarity and voltage intensity led between anode and auxiliary electrode passing through holding space. It is possible to control bombardment of substrates by charged particles in several ways : surface of substrates and/­/or layers growing on substrates is held on selected potenti­al with regard to anode's potential, or in such a way that sub­strates and/or growing layers are charged to floating potenti­al and owing to difference between plasma's potential and floa­ting potential they are bombarded by charged particles, energy and density of which is controlled by plasma's holding degree, gas pressure and sputtering discharge output.

0012Device for carrying out above-mentioned method consists in vacuum chamber, in which cathode of sputtering source is accom­modated, as well as holder with substrates and anode, whilst in wall of vacuum chamber there are supply of working gas and pum­ping output, outside vacuum chamber there is placed direct-cur­rent or high-frequency voltage source, connected between catho­de and anode, and magnetic field sources. Substance of the in­vention consists in that sources of magnetic field for forming holding magnetic multipolar field are placed around the whole holding space that contains substrates so that groups of magne­tic field sources have like poles in one direction and alterna­te with adjacent groups of magnetic field sources that have li­ke poles in opposite direction. Sources of magnetic field may be placed inside chamber and/or in chamber's wall and/or outside chamber and/or behind cathode, whilst groups of sources placed behind cathode are arranged in concentric closed curves for for­ming at least one closed tunnel of magnetic field's lines of for­ce above cathode's surface. Source of direct-current or high-fre­quency voltage U_a is connected between substrates' holder and anode or substrates' holder is electrically connected to anode across R resistor of a value optional from 0 till ∞ . In order to enable changing anode's position with regard to magnetic fi­eld, the device is equipped with sliding anode extension piece made of conductive material, electrically connected with anode. It is also possible to attain a change of plasma's holding degree so that at least one auxiliary electrode is accommodated in hol­ding space and outside chamber there is placed a direct-current voltage source U_E, connected with one pole to auxiliary electro­de and with other pole to anode.

0013Application of method and device in accordance with the invention enables to attain action of dense and homogeneous plas­ma on substrates during layer sputtering. It is possible to at­tain ionic cladding layers on substrates, accommodated in vari­ous distances from cathode, usually 30 till 500 mm. Densities of ionic current on substrates attain usually values 0,1 till 10 mA.cm⁻² with current density on cathode 2 till 50 mA.cm⁻², viz.even in distances from cathode 200 mm and more. At the same time it is possible to attain such a plasma homogeneity that io­nization current is constant in tolerance ± 10% in space with a typical length 100 till 200 mm, i. e. e. g. in distance from cathode from 100 till 250 mm. Such a homogeneous ionic bombard­ment enables to form layers with properties stated in advance that are the same over whole surface of substrates, viz. even for substrates in shape or relatively intricate three-dimensional bo­dies. It is possible to form e. g. compact titanium nitride lay­ers with microhardness from 2 000 kg.mm⁻² till 2 600 kg.mm⁻², properties of which e. g. texture, stress et al., can be con­trolled by bias magnitude on substrates e. g. from -20 till -150 V. It is possible to coat compact titanium nitride layers without use of substrates' bias outside source, on a floating potential e. g. from -20 till -45 V, whilst this floating potential can be regulated by plasma's holding degree. In such a way it is possib­le to control even layers texture from (200) till (111), whilst stress in these layers is low in extent 2 till 3 GPa. An advanta­ge of method and device is also a wide extent of operation pres­sures especially towards low pressures, at least till 2.10⁻² Pa.

0014A further advantage is possibility of coating non-conductive layers by means of direct-current sputtering or coating lay­ers on non-conductive substrates with use of substrate surfa­ce's floating potential. Device's advantage is primary that substrates are placed in space where magnetic field is weak and therefore it is possible to coat both magnetic and non­-magnetic substrates in the same device.

0015Substance of the invention is further explained on exam­ples of device for carrying out method in accordance with the invention by means of drawings where - Fig. 1 represents an example of device with two electromagnets behind a circular cathode, fig. 2 an example of device with an rectangular ca­thode and an anode extension piece, fig. 3 an example of de­vice with four cathodes and with auxiliary electrodes, fig. 4 - an example of ionization current I_S - current I₂ charact­teristics, floating potential U_f1 - current I₂ characteris­tics and current I₁ of the first coil - current I₂ characte­ristics in device according to fig. 1, fig. 5 - an example of ionization current of substrates I_S and floating potential U_fl - overall pressure P_T characteristics of device according to fig. 1.

0016Fig. 1 graphically represents a device equipped with two electromagnets behind a circular cathode. The device con­sists of vacuum chamber <u style="single">1</u>, made of a magnetically soft metal, has a cylindrical shape with axis accommodated horizontally and forms at the same time anode 3. Chamber 1 is equipped with inlet <u style="single">8</u> of working gas and pumping outlet <u style="single">9</u>. Flush with one vertical wall of chamber <u style="single">1</u> coaxially with it there is placed a flat circular cathode <u style="single">2</u> made of titanium. Circular holder <u style="single">4</u> of substrates <u style="single">5</u> is fastened coaxially against cathode <u style="single">2</u>; hol­der <u style="single">4</u> is fastened adjustably in a distance from 30 till 300 mm from cathode <u style="single">2</u>. Source <u style="single">6</u> of cathode's U_K voltage and source <u style="single">7</u> of substrates' U_S voltage are placed outside chamber <u style="single">1</u>. Source <u style="single">6</u> of voltage U_K is a source of direct-current voltage from zero till 1 000 V and is connected with negative pole to cathode <u style="single">2</u> and with positive pole to chamber <u style="single">1</u>. Source <u style="single">7</u> of direct-current voltage U_S from zero till 1 000 V is connected with negative po­le to conductive holder <u style="single">4</u> of substrates <u style="single">5</u> and with positive po­le to chamber <u style="single">1</u>. Sources of holding multipolar field are partly permanent magnets <u style="single">10</u>, <u style="single">11</u>, <u style="single">12</u>, partly two electromagnets <u style="single">15</u>, <u style="single">17</u>. Permanent magnets <u style="single">10</u>, <u style="single">11</u> are accommodated and fastened on insi­de mantle of chamber <u style="single">1</u> in groups <u style="single">22</u>, <u style="single">23</u> that form an even num­ber, e. g. eight rows, parallel with device's axis, whilst ori­entation of all magnets in each group is congruent and has a ra­dial direction and adjacent groups <u style="single">22</u>, <u style="single">23</u> have opposite orienta­tion of magnets. For this purpose magnets <u style="single">11</u> with cathode <u style="single">2</u> are doubled in one orientation. Permanent magnets <u style="single">12</u> are further ac­commodated on chamber's inside vertical wall behind substrates and orientated parallel with device's axis and their field is connected with field of magnets' <u style="single">22</u>, <u style="single">23</u> groups on mantle of chamber <u style="single">1</u>. Device is further equipped with two electromagnets for forming a holding magnetic field. The first electromagnet consists of coil <u style="single">15</u>, connected across source of current I₁, pla­ced behind cathode <u style="single">1</u> coaxially with it, and of core <u style="single">16</u> made of soft steel, that is inserted into cavity of the first coil <u style="single">15</u>. The second electromagnet consists of the second coil <u style="single">17</u>, connec­ted across source of current I₂, that is placed behind cathode <u style="single">1</u> and coaxially with it around the first coil <u style="single">15</u>, further of hollow core <u style="single">18</u> made of soft steel in shape of cylindrical an­nulus that fills space between the first and the second coil and is connected across plate <u style="single">19</u> made of soft steel with core <u style="single">16</u>. The whole assembly of cathode <u style="single">2</u>, the first and the second coil <u style="single">15</u> and <u style="single">17</u> and magnetic circuit <u style="single">16</u>, <u style="single">18</u>, <u style="single">19</u> is attached across packing and insulating ring <u style="single">21</u> by aid of flange <u style="single">20</u> on edge of circular cut-out in vertical wall of vacuum chamber <u style="single">1</u>. Neither sources of currents I₁ and I₂, further systems for gas filling and pumping, necessary packings and insulations, vacu­ometers and means for cooling cathode, chamber and substrates, nor means for substrates heating are drawn for clear view. If process of layer sputtering it requires, the device can also include usual diaphragm sliding between cathode and substrates.

0017The device functions as follows : Into vacuum chamber <u style="single">1</u> there is filled through inlet <u style="single">8</u> a working gas or a gas mixture, e. g. mixture of argon and nitrogen, on required overall pres­sure p_T. Then glow discharge is ignited between cathode <u style="single">2</u> and chamber <u style="single">1</u> that serves at the same time as anode <u style="single">3</u>. This dis­charge is conditional and influenced by holding magnetic multi­polar field, lines of force <u style="single">13</u>, <u style="single">14</u> of which enclose holding spa­ce, where substrates <u style="single">5</u> on holder <u style="single">4</u> are accommodated. Lines of force of multipolar field on boundary of holding field change direction on various spots owing to alternating magnets' <u style="single">22</u>, <u style="single">23</u> groups. Therefore magnetic field intensity drops quickly to­wards centre of holding space from edges. Such a field configu­ration affects plasma with magnetic pressure from edges towards re of holding space and holds here a dense plasma. Magne­ tic induction on boundary of holding space amounts usually from 10 mR till 50 mT or even more; in middle region contai­ning substrates it usually amounts from zero till 2 mT. For perfect plasma's holding it is necessary that from middle re­gion of holding space to anode no channel runs with a lower than minimum magnitude of magnetic induction that usually amo­unts from 1 mT till 10 mT. If such a channel exists, holding is only partial and density of plasma is reduced. Also dischar­ge's stability may be reduced as further described in legend of fig. 4. A part of holding multipolar magnetic field is al­so magnetic field above cathode <u style="single">2</u>, formed by aid of coils <u style="single">15</u> and <u style="single">16</u> and magnetic circuit <u style="single">16</u>, <u style="single">18</u>, <u style="single">19</u>, placed behind cathode. Current I₁ of coil <u style="single">15</u> forms a closed tunnel of lines of force <u style="single">14</u> above cathode and current I₂ of the second coil <u style="single">17</u> forms a magnetic field, lines of force of which from cathode's edge are connected with lines of force formed by permanent magnets <u style="single">11</u>.It is possible to change shape and intensity of magnetic field formed by coils <u style="single">15</u> and <u style="single">17</u> by changes of polarity and cur­rents' I₁ and I₂ magnitude and affect in such a way plasma's holding, as stated in legend of fig. 4. Therefore a dense plas­ma results from interaction of discharge glowing between catho­de <u style="single">2</u> and anode <u style="single">3</u> with holding multipolar pole and is held in holding space. Particles from this plasma, especially electrons and positive ions, impinge on substrates and can affect proper­ties of growing layers. If substrates are electrically conduc­tive, it is possible to apply a voltage U_S from source <u style="single">7</u> on them and so change sort and energy of bombarding particles and in such a way to affect further conditions of layers' growth. A volta­ge U_S from -20 till -100 V is usually sufficient during layers' deposition for such an affecting. In case of a higher voltage U_S, usually at least -200 till - 1 000 V, it is possible to at­tain ionic etching of substrates <u style="single">5</u> by means of dust removal.

0018It is possible to affect properties of layers also by chan­ging distance d between cathode and substrates. It was found out in device in accordance with fig. 1 that e. g. during titanium spraying in argon with pressure p_T = 0,1 Pa and with constant output of discharge into cathode, ionic current I₃ flowing on substrates with a bias e. g. U_S = -100 V ranged only to ± 10% of its mean value, viz. in overall range of distances d between cathode and substrates from 80 till 220 mm. it is an important advantage of given method and device, conforming high homogene­ity of plasma in holding space, and can be utilized for affec­ting properties of layers.

0019Fig. 2 graphically represents device equipped with one rec­tangular cathode and an anode extension piece. Vacuum chamber <u style="single">1</u>, equipped with inlet <u style="single">8</u> of working gas and pumping output <u style="single">9</u>, has a parallelepiped shape. At lower wall of chamber <u style="single">1</u> and parallel with it there is insulated accommodated anode <u style="single">3</u> in shape of quadrangle plate made of conductive material. Cathode <u style="single">2</u> is pla­ced parallel with one vertical wall of chamber <u style="single">1</u> and has a rec­tangular shape. Against cathode <u style="single">2</u>, parallel with it there is pla­ced a flat holder <u style="single">4</u> of substrates <u style="single">5</u>. Voltage source <u style="single">6</u> of cathode U_K and voltage source <u style="single">7</u> of substrates U_S are accommodated outside chamber 1. Sources of holding multipolar field are formed by per­manent magnets <u style="single">10</u> that are partly attached around holding space on perforated magnets' carrier <u style="single">24</u>, connected electrically with <u style="single">3</u>, and assembled in groups <u style="single">25</u>, <u style="single">26</u>, <u style="single">30</u>, accommodated in planes parallel with plane of cathode <u style="single">2</u>, and in these groups <u style="single">25</u>, <u style="single">26</u>, <u style="single">30</u> all magnets are orientated either towards chamber or in op­posite direction, whilst orientation of adjacent groups <u style="single">25</u>, <u style="single">26</u> is opposite to one another. Permanent magnets <u style="single">10</u> are further placed behind cathode <u style="single">2</u> in two groups <u style="single">27</u>, <u style="single">28</u>. The first group <u style="single">27</u> has an rectangular base and is placed behind middle part of cathode <u style="single">2</u> and the second group <u style="single">28</u> is placed behind whole circuit of cathode <u style="single">2</u>. Orientation of magnets in both groups <u style="single">27</u>, <u style="single">28</u> is opposite and lines of force <u style="single">29</u> of magnetic field in second group of magnets <u style="single">28</u> are connected with lines of force in the nearest group <u style="single">30</u> of magnets placed on magnets' carrier <u style="single">24</u>. Device is further equipped with movable anode extension piece <u style="single">31</u>, electrically connected with anode <u style="single">3</u>. Extension pie­ce <u style="single">31</u> consists of frame <u style="single">32</u> in shape of rectangle's circumferen­ce with dimensions greater than are dimensions of cathode <u style="single">2</u>, and of pistons <u style="single">33</u>, that pass through wall of chamber <u style="single">1</u> behind cathode <u style="single">2</u>. It is possible to displace extension piece <u style="single">31</u> by aid of pistons <u style="single">33</u> across lines of force <u style="single">29</u> of magnetic field around cathode <u style="single">2</u> into various positions, in which frame <u style="single">32</u> is situated in plane parallel with cathode's plane, but in which frame's plane is situated in plane of cathode or before it or behind it. Similar usual elements are for clear view not drawn in fig. 2, in contradistinction to fig. 1. On the top of it; cooling of anode extension piece <u style="single">31</u> and anode <u style="single">3</u> with magnets' <u style="single">24</u> carrier is here not taken in account.

0020Device in accordance with fig. 2 functions by analogy with fig. 1. However, magnetic holding field in fig. 2 is fixed chosen by layout of permanent magnets <u style="single">10</u>, used even for forming magnetic field <u style="single">14</u>, <u style="single">29</u> above cathode. Control of plas­ma's holding degree in holding field can be carried out in this device by movement of anode extension piece <u style="single">31</u> across boundary of holding space around cathode <u style="single">2</u>, viz. across lines of force <u style="single">29</u>. The highest degree of plasma's holding is attained by shif­ting out extension piece <u style="single">31</u> from holding space behind plane of cathode <u style="single">2</u>. During sliding-in extension piece <u style="single">31</u> towards holding space, i. e. into regions with increasingly lower induction of magnetic field, increasingly more electrons and ions from hol­ding space impinge on anode extension piece <u style="single">31</u>, where they re­combine, what increases plasma's density in the whole holding space, consequently, also around substrates. In such a way it is possible to regulate intensity of substrates' bombardment by particles from plasma and, consequently also properties of gro­wing layers. Movement of anode extension piece <u style="single">31</u>, consequent­ly, really changes anode's position in respect to magnetic fi­eld.

0021It is possible to affect sort of charged particles, their number and energy, that bombard substrates, by holding substra­tes'surface on chosen potential. It is possible to use sources <u style="single">7</u> of direct-current or high-frequency voltage U_S for conducting substrates and conducting layers. It is necessary to use source <u style="single">7</u> of high-frequency voltage U_S for case of non-conducting sub­strates and/or non-conducting layers. However, if source U_S is disconnected, substrates with growing layers are on floating po­ tential and owing to difference between plasma's potential and growing potential, growing layers are bombarded by acce­lerated positive ions and, at the same time, by electrons in the same quantity. It is possible to affect magnitude of flo­ating potential and plasma's density, that defines flux densi­ty of bombarding particles, first of all by degree of plasma's holding, e. g. by movement of anode extension piece <u style="single">31</u>, further by magnitude of gas pressure, by output of sputtering discharge, if need be, by changing distance of substrates' holders from cathode. This method that uses floating potential of substra­tes, has first and foremost the advantage that it is equally suitable for non-conducting and conducting substrates and for conducting and non-conducting layers.

0022Fig. 3 represents device equipped with four cathodes and auxiliary electrodes. Chamber 1 of device has shape of octagon with axis placed vertically, is made of non-magnetic conducting material, e. g. of non-magnetic rustless steel and, at the same time, it is anode <u style="single">3</u>. In axis of chamber <u style="single">1</u> there is from below accommodated circular holder <u style="single">4</u> of substrates <u style="single">5</u>, that can rota­te by aid of engine <u style="single">34</u>, placed under chamber's bottom. Holder <u style="single">4</u> is attached across resistor R <u style="single">35</u>, mass of which is adjustab­le in range from 0 till ∞ to chamber <u style="single">1</u>. In four vertical walls of chamber there are in 90^o fixed four rectangular catho­de assemblies <u style="single">37</u> by means of flanges <u style="single">36</u>. Each cathode assembly <u style="single">37</u> consists of rectangular cathode <u style="single">2</u>, magnetically conducting rear plate <u style="single">38</u> and of permanent magnets <u style="single">10</u>, arranged in two groups <u style="single">27</u>, <u style="single">28</u>, the first group <u style="single">27</u> of which is placed behind cathode's centre and the second group <u style="single">28</u> behind its circumference, by analogy with device in accordance with fig. 2. Besides magnets in cathode assemblies <u style="single">37</u>, sources of holding multipolar magne­tic field are permanent magnets <u style="single">10</u>, placed outside chamber <u style="single">1</u>, viz. nearly regularly partly on mantle of chamber <u style="single">1</u>, in groups forming vertical rows of equally orientated magnets and orien­entated conctrarywise in respect to adjacent rows, partly magnets <u style="single">10</u> are accommodated from without on bases of chamber <u style="single">1</u> and ori­ted by turns in chess-board arrangement. Magnetic field of magnets on mantle's edges is connected with magnets' field on bases' edges. At the same time those spots <u style="single">39</u> on mantle around cathode, where in case of quite regular arrangement of magnets <u style="single">10</u> should be placed magnets equally orientated in respect to the second group <u style="single">28</u> of magnets behind cathode <u style="single">2</u>, are left va­cant. Device is further equipped with eight auxiliary electro­des <u style="single">40</u>, surface of which is to advantage formed by material of cathode <u style="single">2</u>.These electrodes <u style="single">40</u> pass through holding space paral­lel with axis of chamber <u style="single">1</u>, whilst always two auxiliary elect­rodes <u style="single">40</u> are placed near one cathode <u style="single">2</u>, viz. at opposite edges of cathode <u style="single">2</u>. All electrodes <u style="single">40</u> are insulated led-out across base of chamber <u style="single">1</u> on source <u style="single">41</u> of voltage U_E, placed outside cham­ber, and supply direct-current voltage e. g. in range - 200 V till 200 V with regard to chamber <u style="single">1</u>. On fig. 3 there are not stated for clear view similar usual elements as on figures 1 and 2. For higher outlets it is necessary to use more cooling of auxiliary electrodes <u style="single">40</u>, that is also not shown in figure.

0023Function of device in accordance with fig. 3 is by analo­gy with function of devices according to figures 1 and 2. How­ ever, in device in accordance with fig. 3 substrates can rota­te on rotating holder <u style="single">4</u> by aid of engine <u style="single">34</u>. At the same time four cathodes are sputtered so that layers on substrates grow from all sides simultaneously. Holder <u style="single">4</u> of substrates <u style="single">5</u> is elec­trically connected across anode <u style="single">3</u> across resistor R <u style="single">35</u> adjustab­le in range from 0 to ∞ . With resistance value R = ∞ <u style="single">0</u> sub­trates are held on floating potential, with resistance value R = 0 <u style="single">0</u> holder of substrates is held on anode's potential. Re­sistance R magnitude can, consequently, change substrates' bi­as and whole current that flows on them. Degree of plasma's holding in holding space is affected by polarity and voltage U_E magnitude on auxiliary electrodes <u style="single">40</u>. As far as sufficient­ly high negative voltage with respect to anode <u style="single">3</u>, e. g. in ran­ge -20 till -200 V, if need be, also higher, is led on elec­trodes <u style="single">40</u>, electrons from plasma are repelled by negative bi­as of auxiliary electrodes <u style="single">40</u> and degree of plasma's holding is high. As far as value of voltage U_E on electrodes <u style="single">40</u> chan­ges step by step to positive one, e. g. from value -20 V to value e. g. +50 V, electrodes <u style="single">40</u> take off task of anode, plas­ma on electrodes <u style="single">40</u> recombines and degree of plasma's holding in holding space is reduced. Therefore plasma's density around substrates is reduced and consequently it is possible to affect quantity of charged particles impinging on substrates.

0024An important advantage of device in accordance with fig. 3 is that uniform velocity of layer coating on substrates is attained practically from all directions owing to regular lay­out of large-size cathodes <u style="single">2</u> around substrates <u style="single">5</u> and owing to holder's <u style="single">4</u> rotating. This together with plasma's homogeneity around substrates, guaranteed by multipolar plasma's holding, enables homogeneous properties of coated layers on all surfa­ces of substrates. It is very important especially for layers whose properties depend so on deposition's velocity, as on ener­gy and density of impinging particles, e. g. for titanium nitri­de layers with defined stress and defined orientation of crystal­lites.

0025Fig. 4 represents an example of ionization current I_S - cur­rent I₂ of second coil <u style="single">17</u> characteristics in device according to fig. 1 with substrates' bias U_S = -100 V. A further example re­presents here floating potential <u style="single">43a</u>, <u style="single">43b</u> - U_fl- current I₂ cha­racteristic with current I_S = 0 A. The third curve represents current I₁ of the first coil <u style="single">15</u> - current I₂ of the second coil <u style="single">37</u> characteristic <u style="single">44a</u>, <u style="single">44b</u> for attaining constant current into cathode <u style="single">2</u> I_K = 1 A with constant voltage of cathode U_K = -600 V. The following constant parameters were held during measuring cha­racteristics <u style="single">42 a,b</u>; <u style="single">43a,b</u>; <u style="single">44a,b</u> : distance of substrates <u style="single">5</u> from cathode <u style="single">2</u> d = 200 mm, pressure of argon 0,1 Pa, voltage of catho­de U_k = -600 V and current of cathode I_K = 1 A.

0026Fig. 5 represents an example of ionization current I_S of substrates - pressure p_T current characteristic <u style="single">45</u> in device according to fig. 1 with voltage of substrates U_S = - 100 V. It represents further floating potential of substrates <u style="single">5</u> - pressu­re p_T with current I_S = 0 A characteristics <u style="single">46</u>. Both characteris­tics <u style="single">45</u>, <u style="single">46</u> were measured with the same constant parameters <u style="single">:</u> voltage of cathode <u style="single">2</u> U_K = - 600 V, current of cathode I_K = 1 A, distance <u style="single">d</u> of substrates <u style="single">5</u> from cathode d = 200 mm and current I₂ of the second coil <u style="single">17</u> I₂ = + 10 A.

0027In fig. 4 stated characteristics show an example how it is possible to control energy and density of particles im­pinging on substrates <u style="single">5</u> in device according to figs. 1 by me­ans of holding multipolar field's form and intensity control. As far as in this device current polarity I₂ is positive and current I₂ is greater than + 2,5 A, i. e. interval A in fig. 4, lines of force from edge of cathode <u style="single">2</u> get out towards hol­ding space so as stated in fig. 1. Consequently, these lines of force are repelled by field of doubled magnets <u style="single">11</u>.If pola­rity of current I₂ is negative or positive but lower than + 1 A, i. e. interval C in fig. 4; lines of force on edge of ca­thode <u style="single">2</u> are orientated contrarywise, viz. from holding space into cathode 2. Then lines of force from doubled magnets <u style="single">11</u>, on the contrary, are connected with lines of force directed to edge of cathode <u style="single">2</u>. In interval B of currents I₂ from +1 A to +2,5 A, field between edge of cathode <u style="single">2</u> and doubled mag­nets <u style="single">1</u>, lower than about 10 mT. Multipolar hol­ding field is, consequently, in region C damaged, plasma's holding is not only weak, but even under low pressure, e. g. 0,1 Pa; discharge does not glue at all, viz. with arbitrary magnitude of current I₁ into the first coil <u style="single">15</u>. A stable dis­charge under low pressure, e. g. lower than 0,2 Pa, requires consequently that multipolar magnetic field is connected with cathode's field, whilst orientation of both fields can be eit­her parallel as in interval A or antiparallel as in interval C in fig. 4. Curves <u style="single">42a</u> and <u style="single">42b</u> show that in both intervals A, C it is possible to control flux density of ions bombarding sub­strates with constant voltage U_S on substrates, e. g. - 100 V. Curves <u style="single">43a</u> and <u style="single">43b</u> show that even with zero overall current I_S of substrates it is possible to control floating potential U_fl of substrates also in both intervals A and C. Curves <u style="single">44a</u>, <u style="single">44b</u> serve as example that by aid of current I₁ of the first coil <u style="single">15</u>is possible to hold discharge voltage and current on con­stant value, although current I₂ changes in wide limits. These curves <u style="single">44a,b</u> show also that it is necessary that magnetic fi­ield of coils <u style="single">15</u>, <u style="single">17</u> is orientated against one another, even if polarity of current I₂ is positive or negative. Curves <u style="single">44a</u> and <u style="single">44b</u> are not simmetrically situated with respect to zero current I₂, because magnets <u style="single">11</u> are doubled and, consequently, even with I₂ = 0 A magnetic multipolar field is closed by lines of force radiating from magnets <u style="single">11</u> to cathode <u style="single">2</u>. Characteristics stated in fig. 5 show possibility of controlling quantity and energy of particles that impinge on substrates in device according to fig. 1 by aid of changing whole pressure p_T. Curve <u style="single">45</u> of ioniza­tion current of substrates I_S - pressure p_T characteristic shows that high ionizationcurrents I_s containing 20 till 50% cathode's current I_K, can be extracted on substrates <u style="single">5</u> distant e. g. 200 mm from cathode <u style="single">2</u>, with voltage U_S on substrates only e. g. - 100 V, in a wide pressure range, at least from 0,04 till 5 Pa. Pressure magnitude p_T affects at the same time floating potential U_fl of substrates, in range e. g. from - 5 till - 45 V, as shows curve <u style="single">46</u>. Stable discharge was observed till pressure 2.10⁻² Pa.

0028Method of layer sputtering in accordance with the invention is explained on examples of titanium nitride layers formed in de­vice represented in fig. 1.

Example 1

0029Substrates <u style="single">5</u> made of high-speed steel placed on holder <u style="single">4</u> were heated till till temperature 500^oC with a lower pressure than 10⁻² Pa. Voltage U_s = -600 V was applied to substrates <u style="single">5</u> during 120 sec and voltage U_K = -500 V on cathode <u style="single">2</u> with argon pressure 0,09 Pa, ion-cleaning in such a way substrates and ca­thode. Then titanium nitride layers were sputtered during 90 minutes in mixture of argon and nitrogen with overall pressure 0,09 Pa with cathode's voltage U_K = - 600 V and with cathode's current I_K = 5 A. Substrates <u style="single">5</u> were placed in distance 200 mm from cathode 2 and bias U_S = - 100 V was applied on them. With coil's current <u style="single">15</u> I₁ = 0,9 A and coil's <u style="single">17</u> current I₂ = 4 A sub­strates were bombarded during growth of layers largely by ions from plasma with overall current I_S = 610 mA.

0030A layer prepared in such a way had thickness 3,2 µm and microhardness Vickers HV = 2 590 ± 90 kg/mm⁻² that shows a com­pact microstructure of layer as well as bright gold paint.

0031Titanium nitride layers prepared by conventional magnetron sputtering without action of multipolar magnetic field with dis­tance of substrates from cathode 150 mm with overall pressure 5 Pa are red, porous and have microhardness only HV = 214 kg.mm⁻², that relates to plasma's low density with substrates and to low ionization current I_S = 20 mA with the same bias U_S = -100 V.

0032Roentgenographical analysis of titanium nitride layers pre­pared with method according to the invention under above-mentio­ned particular conditions gives value of grid parameter defined from planes (111) parallel with surface of sample a₁₁₁ = 0,4299 nm, from planes (200) : a₂₀₀ = 0,4258 nm; half-width of lines β₁₁₁ = 0,46^o, β₂₀₀ = 0,56^o, β₂₂₂ = 1,0^o, microstress e = (7,3 ± 1,1) . 10⁻³ and macrostress δ = 6,4 GPa. Texture of coated la­yer is thick with orientation (111) parallel with sample's sur­face. All these values are very near to values attained with titanium nitride layers coated by arc evaporating or low-volta­ge electron beam evaporating under similar coating conditions. Excepting texture they are also near to values attained during conventional magnetron coating, but in substantially shorter distances of substrates from cathode, typically 50 nm.

Example 2

0033Titanium nitride layers were prepared in the same process as in example 1, excepting bias of substrates that was U_S = -50 V, with texture (220), whilst other physical properties of lay­ers did not changed considerably in comparison with example 1.

Example 3

0034Titanium nitride layers were prepared in the same process as in example 1, but with disconnection of source U_S, with flo­ating potential U_fl = - 31 V with regard to anode <u style="single">3</u>. Layers had thickness 5,5 µm during deposition 120 min and microhardness HV = 2 070 ± 80 kg.mm⁻², so that they are compact again. Roentgeno­graphical analysis gives the following results ; a₁₁₁ = 0,4255 nm, a₂₀₀ = 0,4243 nm, β₁₁₁ = 0,23^o, β₂₀₀ = 0,27^o, β₂₂₂ = 0,51^o, e = (4,0 ± 0,5) . 10⁻³, δ = 2,9 GFa. Layers had reduced texture (111) + (200), whilst relation of corrected reflexions' intensi­ties I₂₀₀/I₁₁₁ ≏ 1. These properties are unusual with titanium nitride coated with other physical methods including conventio­nal sputtering and and shows low stresses in layers and low da­mage of crystal lattice with regard to low energy of bombarding ions and simultaneous bombardment by electrons with sufficient current density. In combination with sufficiently high micro­hardness these layers have high adhesion to pads and very go­od useful properties when applied on cutting tools.

Example 4

0035Example describes control of layers' texture by means of floating potential's magnitude control. The same process was used as in example 3, but with current I₂ = 10 A and I₁ = 2A, floating potential of substrates was increased to U_fl = - 45 V and coated layer had priority orientation (111) with relation I₂₀₀/I₁₁₁ ≏ 0,2. Bias reduction U_fl to - 24 V was attained by changing currents I₂ = 3,8 A and I₁ = 1,6 A and priority ori­entation was changed, on the contrary, to (200) with relation I₂₀₀/I₁₁₁ ≏ 5. Other parameters of layers, viz.microhardness, stress and grid parameters did not changed substantially. It is possible to expect that layers with controlled texture are important for optimization of coated cutting tools' efficiency for various cutting conditions.

0036Method in accordance with the invention can be used even for forming titanium nitride decorative gold layers on non-con­ducting substrates as glass or porcelain with process stated in example 1 with modification according to examples 3 and 4 with ion-cleaning omission. Instead of ion-cleaning it is alternati­vely possible to introduce titanium layer sputtering 10 till 200 nm thick in atmosphere of argon without nitrogen for layer adhe­sion increase. It is possible to use for this purpose to advan­tage device in accordance with fig. 3 where it is possible to coat layers from all directions uniformly at the same time.

0037Structure of device in accordance with the invention can be modified in several various modes, according to sort and magni­tude of substrates, according to material of coated layer and according to claims for properties of layers etc. First of all, it is possible to use various forms of cathode, viz. not only flat, but e. g. even cylindrical, hollow, conical etc. It is pos­sible to combine various modes of controlling plasma's holding degree,consequently, e.g. by changing magnetic field, by means of auxiliary electrodes of various shapes and types and by ap­plication of sliding extension pieces, not only connected with anode, but attached e. g. on outside voltage source. It is pos­sible to combine all these elements with various modes of vol­tage control on substrates.

0038It is also possible to accommodate magnets for forming mul­tipolar magnetic field in various modes. It is possible e. g. to orientate magnets not normal to chamber's wall, but parallel with it. An important modification is selection of magnets' orientati­on on cathode's edge with regard to enclosing magnets in chamber. This orientation can be both parallel and antiparallel, whilst held plasma has in both cases various parameters, see e. g. cur­ves <u style="single">42a</u> and <u style="single">42b</u>, <u style="single">43a</u> and <u style="single">43b</u>.