Semiconductor device

Description: TECHNICAL FIELD [Detailed description of the invention]

【0001】

[Technical field to which the invention belongs]

The present invention relates to a semiconductor device, and more particularly to a small and thin semiconductor device used for an IC package, an IC card, or the like.

【0002】

[Conventional technology]

Conventionally, as such a small and thin semiconductor device, a non-contact data carrier component used for identifying an article (for example, JP-A-10-74780) and an active phased array device used for mobile satellite communication (for example, JP-A-10-74780) For example, Japanese Patent Application Laid-Open No. 5-160635) or high-frequency IC packages (for example, Japanese Patent Application Laid-Open No. 9-237867) are known.

【0003】

Both of these are configured to have an antenna element for receiving radio waves and a semiconductor element for driving / identification or amplification, and are designed to be as compact as possible.

【0004】

FIG. 3 is a cross-sectional view of a semiconductor device showing such a conventional example. As shown in FIG. 3, in such a semiconductor device (non-contact data carrier component), a semiconductor element 4 and an antenna element 3 arranged in a loop around the semiconductor element 4 are temporarily sealed with a resin, and a plurality of protrusions 11 are formed. First, a primary molded product 10 having a waste hole 12 for resin injection used in a subsequent process is prepared. Then, the secondary molded product 14 is obtained by inserting the primary molded product 10 into a mold, positioning the protrusions 11 and then injecting resin into the exterior portion 13 through the discard holes 12.

【0005】

In short, the non-contact data carrier component obtained as this secondary molded product is provided with protrusions 11 when the semiconductor element 4 and the antenna 3 are resin-sealed for the first time, and they are the center of the package at the second resin-sealing. The structure is such that it can be adjusted with the protrusion 11 so that it comes to. With such a structure, the antenna and the IC constituting the non-contact data carrier component can improve the environmental resistance to water and the like.

【0006】

Further, in the active phased array device such as JP-A-5-160635 described above, an antenna is formed on a ceramic member and used as a part of an IC package, and the high frequency described in JP-A-9-237867 is further described. The IC package for use is a multilayer structure of an antenna substrate and an IC device substrate.

【0007】

Further, in the conventional surface mount type semiconductor device, the terminals have a lead shape when mounted on a substrate. When joining with such a lead shape, solder joining is usually the main method, so the contact area is narrow, and there is a tendency for electrical short-circuiting due to stress on the leads or solder coatability.

【0008】

[Problems to be Solved by the Invention]

The above-mentioned conventional semiconductor device, that is, the semiconductor device described in each publication, has a drawback that the manufacturing process is complicated or the shapes of the antenna portion and the element portion are different, so that there is a limit to miniaturization and thinning. There is.

【0009】

In addition, conventional surface-mounted semiconductor devices, if they are joined in a lead shape, are usually mainly solder-bonded, so the contact area is narrow, and they are electrically charged due to stress on the leads and solderability. Tends to short circuit.

【0010】

An object of the present invention is to provide a semiconductor device having a simple manufacturing process, which can be made smaller and thinner, has less stress on leads, and is less likely to cause a short circuit.

【0011】

[Means for solving problems]

In the semiconductor device of the present invention, an antenna plate formed by folding back a metal pattern on the surface of an insulating plate, a semiconductor element having connection terminals formed on the upper surface and the lower surface, respectively, and a metal plate are attached via an adhesive. It is laminated and is configured by covering the antenna plate, the semiconductor element, and the metal plate with a resin or a cap.

【0012】

Further, the antenna plate is formed so that one end of the folded pattern is passed through the inside of the insulating plate or is led out to the back surface along the side surface.

【0013】

Further, these antenna plates, semiconductor elements and metal plates are formed in the same square shape.

【0014】

Further, in this semiconductor element, a plurality of the connection terminals on the back surface connected to the metal plate are formed in a lead shape.

【0015】

Further, these antenna plates, semiconductor elements, and metal plates are each formed by applying an adhesive in the center.

【0016】

Further, the metal plate is made of Cu or 42 alloy and is formed to supply a ground potential.

【0017】

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 1 is an exploded and assembled perspective view of a semiconductor device for explaining an embodiment of the present invention. As shown in FIG. 1, in this embodiment, an antenna plate 1 in which a metal pattern is formed by folding back as a pattern 3 of an antenna element on the surface of an insulating plate such as resin or ceramic 2 and leads on the upper surface and the lower surface, respectively. It has a semiconductor element 4 formed with less-shaped connection terminals 5A and 5B (5B is described in FIG. 2) and a metal plate 7, and these are laminated via adhesives 6A and 6B and the like. The laminated antenna plate 1, semiconductor element 4, and metal plate 7 are formed by covering the periphery with a resin or a cap 8.

【0018】

Further, in making these electrical connections, the antenna plate 1 is a semiconductor by allowing one end of the folded pattern 3 to penetrate the inside of an insulating plate such as resin or ceramic 2 or to be led out to the back surface along the side surface. The element 4 can be connected to the terminal 5A, and the semiconductor element 4 forms a plurality of terminals to be connected to the metal plate 7 on the back surface in addition to the terminal 5A on the upper surface.

【0019】

Further, these antenna plates 1, the semiconductor element 4 and the metal plate 7 are formed in the same square shape, that is, they have the same shape to improve the manufacturability, and the adhesives 6A, 6B, etc. are in the center of them. Is applied. Further, the metal plate 7 adopts a structure in which a ground potential is supplied by being formed of Cu or 42 alloy used in the IC field and connected to a connection terminal formed on the back surface of the semiconductor element 4.

【0020】

Next, such semiconductor devices will be described in the order of manufacturing processes. First, an antenna plate 1 in which the antenna pattern 1 is formed of resin or ceramic 2 in a plate shape is used. As described above, the semiconductor element 4 is provided with terminals 5A and the like that can be electrically connected on the upper and lower surfaces. Therefore, after the antenna plate 1, the semiconductor element 4, and the metal plate 7 are sandwiched, an adhesive is applied. 6A and 6B are interposed and overlapped to join. At this time, the same size is desirable in consideration of space saving. The state of these three layers is protected by covering with resin or a cap 8. By configuring both the upper surface antenna plate 1 and the lower surface metal plate 7 of the three-layer package to be exposed, the upper surface portion can protect the internal circuit and the lower surface portion can be joined to the substrate.

【0021】

With the above-described configuration, the metal plate 7 has the same size as the semiconductor element 4, and is bonded to the semiconductor element 4 with an adhesive such as 6B. Further, as for the back surface terminal of the semiconductor element 4, only the power supply terminal is joined to the metal plate 7. The metal plate 7 has a large area to facilitate electrical connection from the outside. Therefore, the large-area metal plate 7 as in the present embodiment is advantageous when joining and non-joining are repeated like a switch and joining at the time of mounting on a substrate. The completed state may be mounted on a board or individually used in the same role as an IC card, and may be used together or individually.

【0022】

FIG. 2 is a perspective view of the back surface of the semiconductor element in FIG. As shown in FIG. 2, as described above, the semiconductor element 4 has a plurality of connection terminals 5B connected to the metal plate 7 formed in a lead shape on the back surface side. This is intended to increase the contact area with the metal plate 7 and reduce stress on the terminal 5B.

【0023】

Further, in the above-described embodiment, the semiconductor element 4 is driven by the received radio wave from the antenna plate 1, but when the semiconductor element 4 requires a separate drive power source, two metal plates 7 are used. The terminals 5B formed on the back surface of the semiconductor element 4 are divided into two sets, one for high-level power supply and the other for grounding. can do.

【0024】

[Effect of the invention]

As described above, the semiconductor device of the present invention simplifies the manufacturing and assembling process by laminating an antenna plate, a semiconductor element, and a metal plate via an adhesive and covering the periphery with a resin or a cap. Therefore, there is an effect that the size and thickness can be reduced.

【0025】

Further, the present invention has an effect that the contact area can be increased by forming the terminal of the semiconductor element with a leadless structure, so that the stress on the lead can be reduced and the electrical short circuit due to the solderability can be reduced. ..

【0026】

Further, the present invention also has an effect that by forming a metal plate with a plurality of insulated metal plates, each IC package can be used alone as long as an external power supply unit is provided.

[Simple explanation of drawings]

[Figure 1]

It is a disassembled assembly perspective view of the semiconductor device for demonstrating one Embodiment of this invention.

[Figure 2]

It is a perspective view of the back surface of the semiconductor element in FIG.

[Fig. 3]

It is sectional drawing of the semiconductor device which shows a conventional example.

[Explanation of symbols]

1 Antenna plate 2 Resin or ceramic 3 antenna pattern 4 Semiconductor element 5A, 5B connection terminal 6A ~ 6C adhesive 7 metal plate 8 resin or cap