Laserdiode with integrated monitordiode

All previously known approaches for the integration of monitor diodes in a monolithically integrated laser diode with an active laser layer, a light Auskoppelnden front facet and a light feedback rear facet are based on a horizontal serial arrangement of laser diode and monitor diode, in particular with a common use of the active laser layer, thereby However, a temperature-dependent operation and an application restriction results. In order to enable a flexible designability of the laser diode (LD) and a temperature-independent operation, the laser diode (LD) according to the invention has a rear facet (RF) with an inclination angle α greater than 0 ° and less than 90 ° to the active laser layer (LS). Furthermore, the active monitor diode layer (MDS) is arranged below the active laser layer (LS). By appropriate contacting the laser diode (LD) is always operated in the forward direction and the monitor diode (MD) in reverse direction for the current. Thus, the integrated monitor diode (MD) is optically parallel and electrically connected in series with the laser diode (LD) with separate active laser layer (LS) and monitor diode layer (MDS). With this basic arrangement, the laser diode (LD) according to the invention can be realized in different laser structure shapes, in particular also as BH-DFB laser structure with a vertical light extraction by a likewise inclined front facet (FF). Thus, the integrated monitor diode (MD) is optically parallel and electrically connected in series with the laser diode (LD) with separate active laser layer (LS) and monitor diode layer (MDS). With this basic arrangement, the laser diode (LD) according to the invention can be realized in different laser structure shapes, in particular also as BH-DFB laser structure with a vertical light extraction by a likewise inclined front facet (FF). Thus, the integrated monitor diode (MD) is optically parallel and electrically connected in series with the laser diode (LD) with separate active laser layer (LS) and monitor diode layer (MDS). With this basic arrangement, the laser diode (LD) according to the invention can be realized in different laser structure shapes, in particular also as BH-DFB laser structure with a vertical light extraction by a likewise inclined front facet (FF).