Nova Patents
EP1685584A4

SILICON DEVICE ON Si:C-OI and SGOI AND METHOD OF MANUFACTURE

Abstract

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.

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Projected expiry passed 30 June 2024, 2.2 years ago.

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Citations
DocumentRelationOfficeCited during
US5891769ACitesUnited States of AmericaSearch report
RAY S K ET AL: "Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 294, no. 1-2, 15 February 1997 (1997-02-15), pages 149 - 152, XP004225590, ISSN: 0040-6090Non-patent–Search report
KOBAYASHI ET AL: "Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization", APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM, NL, vol. 100-101, 2 July 1996 (1996-07-02), pages 498 - 502, XP005296582, ISSN: 0169-4332Non-patent–Search report
See also references of WO 2005057612A2Non-patent–Search report