SILICON DEVICE ON Si:C-OI and SGOI AND METHOD OF MANUFACTURE

Provides the semiconductor structure and manufacturing method thereof. The production method of forming shallow trench to frame (STI (25) of the substrate and provides the first material on the substrate (30) and second material (40). A heating annealing process; (30) and second material (40) hybrid the first material on the substrate; is connected to the first island of the nFET area and pFET area (50) and second recess (55). Different material layer is formed in the first recess (50) and second recess (55) is. The STI relaxation and hearing the first recess (50) and second recess (55) relaxation. The first material (30) can be Cover material of deposition or growing, and second material (40) can be the surface or growing Si: C or SWITCH. The strain Si layer is formed in the first recess (50) and second recess (55) at least a second.