EP1583148A4
Semiconductor device and its fabricating method
11 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7 Sheet 8 Sheet 9 Sheet 10 Sheet 11
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| EP1014452A1 | Cites | European Patent Office (EPO) | Search report |
| EP1017100A1 | Cites | European Patent Office (EPO) | Search report |
| US2002146893A1 | Cites | United States of America | Search report |
| JP2002305296A | Cites | Japan | Search report |
| US6236063B1 | Cites | United States of America | Search report |
| US6423614B1 | Cites | United States of America | Search report |
| US6437370B1 | Cites | United States of America | Search report |
| See also references of WO 2004068582A1 | Non-patent | – | Search report |
26 members in 8 offices
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 2003002667 | Japan | – | |
| 2003002667 | Japan | A | |
| 0316355 | Japan | W |
Members26
| Document | Office | Kind | |
|---|---|---|---|
| WO2004068582A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU2003289448A1 | Australia | A1 | |
| TW200503256A | Taiwan Province of China | A | |
| US2005056842A1 | United States of America | A1 | |
| KR20050094428A | Republic of Korea | A | |
| EP1583148A1 | European Patent Office (EPO) | A1 | |
| CN1735968A | China | A | |
| JPWO2004068582A1 | Japan | A1 | |
| US2007015302A1 | United States of America | A1 | |
| EP1583148A4This record | European Patent Office (EPO) | A4 | |
| CN100392861C | China | C | |
| US7449718B2 | United States of America | B2 | |
| US7501306B2 | United States of America | B2 | |
| US2009212285A1 | United States of America | A1 | |
| EP2256807A2 | European Patent Office (EPO) | A2 | |
| TWI338362B | Taiwan Province of China | B | |
| KR101026644B1 | Republic of Korea | B1 | |
| US7919779B2 | United States of America | B2 | |
| JP4693413B2 | Japan | B2 | |
| JP2011109116A | Japan | A | |
| JP5352572B2 | Japan | B2 | |
| JP2014003307A | Japan | A | |
| JP5736422B2 | Japan | B2 | |
| JP2015144300A | Japan | A | |
| EP2256807A3 | European Patent Office (EPO) | A3 | |
| JP6242831B2 | Japan | B2 |
22 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| First examination report despatched17Q | 17Q | |
| Supplementary search report drawn up and despatchedA4 | A4 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Request for extension of the european patent (deleted)DAX | DAX | |
| Designated contracting states (corrected)RBV | RBV | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1583148
- Application
- 37809316
Titles3
- German
- HALBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHREN DAFÜR
- English
- SEMICONDUCTOR DEVICE AND ITS FABRICATING METHOD
- French
- DISPOSITIF SEMI-CONDUCTEUR ET PROCEDE DE PRODUCTION DE CE DISPOSITIF
Classification
- CPC, 21
- H10D86/0214
- H10F77/16
- H10F39/107
- H10D86/60
- H10D86/421
- H10D86/411
- H10D86/481
- H10D86/40
- H10D30/0314
- H10D30/0321
- H10D30/6731
- H10D30/6745
- H10P72/7434
- H10W72/252
- H10W90/724
- H10W72/923
- H10W72/9223
- H10W72/942
- H10W72/922
- H10W72/952
- H10F39/12
- IPC, 9
- H01L27 12
- H01L21 84
- H01L21 336
- H01L29 786
- H01L21 20
- H01L27 146
- H01L27 144
- H10P14 40
- H10P95 00
Designated states1
- Contracting states, 1
- Netherlands (Kingdom of the)
