EP1565931A4
Strained finfet cmos device structures
Abstract
A semiconductor device structure, includes a PMOS device (200) and an NMOS device (300) disposed on a substrate (1, 2) the PMOS device including a compressive layer (6) stressing an active region of the PMOS device, the NMOS device including a tensile layer (9) stressing an active region of the NMOS device, wherein the compressive layer includes a first dielectric material, the tensile layer includes a second dielectric material, and the PMOS and NMOS devices are FinFET devices (200, 300).
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Projected expiry passed 25 November 2022, 3.8 years ago.
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Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| US2002093046A1 | Cites | United States of America | Search report |
| US2003040158A1 | Cites | United States of America | Search report |
| US6342410B1 | Cites | United States of America | Search report |
| US6573172B1 | Cites | United States of America | Search report |
| SHIMIZU A ET AL: "Local mechanical-stress control (LMC) a new technique for CMOS-performance enhancement", INTERNATIONAL ELECTRON DEVICES MEETING 2001. IEDM. TECHNICAL DIGEST. WASHINGTON, DC, DEC. 2 - 5, 2001, NEW YORK, NY : IEEE, US, 2 December 2001 (2001-12-02), pages 1941 - 1944, XP010575160, ISBN: 0-7803-7050-3 | Non-patent | – | Search report |
| ITO S ET AL: "Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance", MICROELECTRONICS AND RELIABILITY, ELSEVIER SCIENCE LTD, GB, vol. 42, no. 2, February 2002 (2002-02-01), pages 201 - 209, XP002332483, ISSN: 0026-2714 | Non-patent | – | Search report |
| ITO S ET AL: "Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design", ELECTRON DEVICES MEETING, 2000. IEDM TECHNICAL DIGEST. INTERNATIONAL DECEMBER 10-13, 2000, PISCATAWAY, NJ, USA,IEEE, 10 December 2000 (2000-12-10), pages 247 - 251, XP010531755, ISBN: 0-7803-6438-4 | Non-patent | – | Search report |
| See also references of WO 2004049406A1 | Non-patent | – | Search report |
17 members in 9 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 0237931 | United States of America | W |
Members17
| Document | Office | Kind | |
|---|---|---|---|
| WO2004049406A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU2002368388A1 | Australia | A1 | |
| TW200425508A | Taiwan Province of China | A | |
| TWI233694B | Taiwan Province of China | B | |
| EP1565931A1 | European Patent Office (EPO) | A1 | |
| CN1695227A | China | A | |
| JP2006507681A | Japan | A | |
| US2006057787A1 | United States of America | A1 | |
| EP1565931A4This record | European Patent Office (EPO) | A4 | |
| EP1565931B1 | European Patent Office (EPO) | B1 | |
| AT377841T | Austria | T | |
| ATE377841T1 | Austria | T1 | |
| DE60223419D1 | Germany | D1 | |
| CN100378901C | China | C | |
| US7388259B2 | United States of America | B2 | |
| DE60223419T2 | Germany | T2 | |
| JP4384988B2 | Japan | B2 |
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Numbers
- Publication
- 1565931
- Application
- 27913193
Titles3
- German
- SPANNUNGSSTRUKTUREN FÜR CMOS-FINFET-GERÄTE
- English
- STRAINED FINFET CMOS DEVICE STRUCTURES
- French
- STRUCTURES DE DISPOSITIF CMOS FINFET CONTRAINT
Classification
- CPC, 8
- H10D30/62
- H10D84/0172
- H10D84/038
- H10D84/0167
- H10D86/201
- H10D84/85
- H10D30/024
- H10D30/792
- IPC, 8
- H01L21 00
- H01L21 336
- H01L21 8238
- H01L27 092
- H01L27 12
- H01L29 786
- H10P14 694
- H10P95 00
Designated states1
- Contracting states, 1
- Türkiye