Strained finfet cmos device structures

The invention claims a semiconductor device, comprising: Arranged in the substrate (1,2) is PMOS component (200) and NMOS device (300), wherein the PMOS device comprises a of the PMOS device with the source region applying stress the shell of said (6), wherein the NMOS member comprises to the NMOS device with the source region applying stress the shell of high-voltage (9), wherein the shell of said comprises a first dielectric materials housing, a voltage of the second dielectric materials; and PMOS and NMOS device is the FinFET device (200,300).