Voltage detector circuit, high-voltage generator circuit, and semiconductor memory device
Abstract
According to embodiments of the invention, a high-voltage generator circuit may include a voltage detector block that has a voltage divider, a discharge section, a comparator, and a control signal generator. The voltage divider generates a divided voltage at an output node by dividing a high voltage. The discharge section discharges the high voltage to a power voltage in response to a first control signal. The comparator determines whether the divided voltage reaches a reference voltage, and the control signal generator generates a second control signal in response to an output from the comparator and the first control signal. The voltage divider may include a high-voltage prevention circuit that prevents the high voltage from being applied to a low-voltage transistor of the comparator during a discharge period of the high voltage. The high-voltage prevention circuit may include a depletion-type or enhancement-type NMOS transistor having a high breakdown voltage.

Term
Term ended
Projected expiry passed 24 November 2024, 1.8 years ago.
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1 sheet
Sheet 1
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| US2003098677A1 | Cites | United States of America | A | Search report | 1,7,14-16 |
| US5276646A | Cites | United States of America | XDA | Search report | 7 |
| US5883501A | Cites | United States of America | XA | Search report | 7 |
9 members in 4 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 2003091305 | Republic of Korea | – | |
| 20030091305 | Republic of Korea | A |
Members9
| Document | Office | Kind | |
|---|---|---|---|
| US2005128821A1 | United States of America | A1 | |
| KR20050059608A | Republic of Korea | A | |
| EP1544991A2 | European Patent Office (EPO) | A2 | |
| JP2005185088A | Japan | A | |
| KR100521385B1 | Republic of Korea | B1 | |
| EP1544991A3This record | European Patent Office (EPO) | A3 | |
| US7154789B2 | United States of America | B2 | |
| JP4520823B2 | Japan | B2 | |
| EP1544991B1 | European Patent Office (EPO) | B1 |
39 legal events, as 4 offices reported them to INPADOC
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|---|---|---|---|
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Patent expired after termination of 20 yearsExpiredPE20 | PE20 | GB | |
| Expiry of rightR071 | R071 | DE | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Opt-out of the competence of the unified patent court (upc) registeredP01 | P01 | EP | |
| Fee paymentPLFP | PLFP | FR | |
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| No opposition filed against granted patent, or epo opposition proceedings concluded without decisionGrantedR097 | R097 | DE | |
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| Dpma publication of mentioned ep patent grantGrantedR096 | R096 | DE | |
| Designated contracting statesAK | AK | EP | |
| European patent grantedGrantedFG4D | FG4D | GB | |
| (expected) grantORIGINAL CODE: 0009210GRAA | GRAA | EP | |
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| Party data changed (applicant data changed or rights of an application transferred)RAP1 | RAP1 | EP | |
| First examination report despatched17Q | 17Q | EP | |
| Designation fees paidAKX | AKX | EP | |
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| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | EP | |
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| Information on inventor provided before grant (corrected)RIN1 | RIN1 | EP | |
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| Request for extension of the european patentAX | AX | EP | |
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Numbers
- Publication
- 1544991
- Application
- 40278186
Titles3
- German
- Spannungsdetektionsschaltung, Hochspannungserzeugungsschaltung, und Halbleiterspeichervorrichtung
- English
- Voltage detector circuit, high-voltage generator circuit, and semiconductor memory device
- French
- Circuit détecteur de tension, circuit de génération haute tension, et dispositif de mémoire à sémi-conducteur
Classification
- CPC, 3
- H02M3/073
- G11C5/14
- H02M1/0041
- IPC, 5
- H02M3 07
- G11C16 06
- G11C5 14
- G11C11 407
- H10D84 00
Designated states2
- Contracting states, 1
- Türkiye
- Extension states, 1
- Yugoslavia, later Serbia and Montenegro (until 2006)