Nova Patents
EP1524702A3

Thin film transistor with body contact region

Abstract

A thin film transistor of the present invention comprises, an active layer formed on an insulating substrate and having a channel region and source/drain regions; a gate electrode formed corresponding to the channel region of the active region; a body contact region separately formed with the source/drain regions in the active layer; source/drain electrodes each connected to the source/drain regions; and a conductive wiring for connecting the body contact region and the gate electrode.

Term

Term ended

Projected expiry passed 12 October 2024, 1.9 years ago.

  1. Priority
  2. Filed
  3. Published
  4. Projected expiry
  5. Today

Every citation, both ways

Citations
DocumentRelationOfficeCategoryCited duringRelevant claims
EP1517373A2CitesEuropean Patent Office (EPO)ELSearch report1,2,5,7,12-23
US2002027246A1CitesUnited States of AmericaXSearch report1-5,7,8,10,12-16
US2002127784A1CitesUnited States of AmericaXSearch report1-23
US4809056ACitesUnited States of AmericaYSearch report1-23
US6498370B1CitesUnited States of AmericaXSearch report1-5,7,8,10,12-16
ASSADERAGHI F ET AL: "DYNAMIC THRESHOLD-VOLTAGE MOSFET (DTMOS) FOR ULTRA-LOW VOLTAGE VLSI", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 44, no. 3, March 1997 (1997-03-01), pages 414 - 422, XP000688254, ISSN: 0018-9383Non-patent––Search report–
ASSADERAGHI F: "DTMOS: ITS DERIVATIVES AND VARIATIONS AND THEIR POTENTIAL APPLICATIONS", EXTENDED ABSTRACTS OF THE INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, JA, September 1998 (1998-09-01), pages 310 - 311, XP000823195Non-patent––Search report–