EP1271663A3
A III nitride film and III nitride multilayer
Abstract
A III nitride multilayer including a given substrate, a III nitride underfilm including Al element of 50 atomic percentages or over for all of the III elements, and a III nitride film including Al element in lower Al content than the Al content of the III nitride underfilm by 10 atomic percentages or over. A full width at half maximum in X-ray rocking curve of the III nitride film is set to 800 seconds or below at (100) plane. A full width at half maximum in X-ray rocking curve of the III nitride film is set to 200 seconds or below at (002) plane.
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Projected expiry passed 13 June 2022, 4.3 years ago.
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Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| EP1065705A2 | Cites | European Patent Office (EPO) | Y | Search report | 10 |
| AMANO H ET AL: "CONTROL OF DISLOCATIONS AND STRESS IN AIGAN ON SAPPHIRE USING A LOWTEMPERATURE INTERLAYER", PHYSICA STATUS SOLIDI. B, BASIC RESEARCH, AKADEMIE VERLAG, BERLIN, DE, vol. 216, no. 1, 1 November 1999 (1999-11-01), pages 683 - 689, XP000892888, ISSN: 0370-1972 | Non-patent | – | – | Search report | – |
| FORSBERG U ET AL: "GROWTH OF HIGH QUALITY AIN EPITAXIAL FILMS BY HOT-WALL CHEMICAL VAPOUR DEPOSITION", MATERIALS SCIENCE FORUM, AEDERMANNSFDORF, CH, vol. 264-268, 1 January 1998 (1998-01-01), pages 1133 - 1136, XP001248200, ISSN: 0255-5476 | Non-patent | – | – | Search report | – |
| "High quality AIN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 66, no. 22, 29 May 1995 (1995-05-29), pages 2958 - 2960, XP012012906, ISSN: 0003-6951 | Non-patent | – | – | Search report | – |
| K. KOBAYASHI, A. A. YAMAGUCHI, S. KIMURA, H. SUNAKAWA, A. KIMURA, A. USUI: "X-ray rocking curve determination of twist and tilt angles in GaN films grown by an epitaxial-lateral-overgrowth technique", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 38, no. 6A/B, 15 June 1999 (1999-06-15), pages L611 - L613, XP002543553 | Non-patent | – | – | Search report | – |
6 members in 3 offices; this record represents the family
Priority claims6
| Document | Office | Kind | Date |
|---|---|---|---|
| 2001181859 | Japan | – | |
| 2001181859 | Japan | A | |
| 303126P | United States of America | – | |
| 30312601 | United States of America | P | |
| 2001266810 | Japan | – | |
| 2001266810 | Japan | A |
Members6
| Document | Office | Kind | |
|---|---|---|---|
| US2002190275A1 | United States of America | A1 | |
| EP1271663A2 | European Patent Office (EPO) | A2 | |
| JP2003063898A | Japan | A | |
| US6765244B2 | United States of America | B2 | |
| JP3954335B2 | Japan | B2 | |
| EP1271663A3This record | European Patent Office (EPO) | A3 |
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Numbers
- Publication
- 1271663
- Application
- 20130753
Titles3
- German
- Ein III Nitrid Film und eine III Nitrid Mehrfachschicht
- English
- A III nitride film and III nitride multilayer
- French
- Une couche à III nitride et une couche multiple à III nitride
Classification
- CPC, 10
- C30B25/02
- C30B29/403
- H10H20/01335
- H10H20/815
- H10D62/405
- H10P14/2901
- H10P14/2921
- H10P14/3216
- H10P14/3416
- H10P14/24
- IPC, 8
- H01L33 00
- C30B25 02
- C30B29 40
- H01L21 20
- H01L29 20
- H01L29 04
- H01L33 12
- H10P14 24
Designated states2
- Contracting states, 1
- Türkiye
- Extension states, 1
- Slovenia