Nova Patents
EP0444935A3

Ion beam control system

Abstract

An ion implantation source (10) used in an ion implantation system. The source produces multiple beam portions which combine to form a large diameter beam of the size of a workpiece. By controlling beam neutralization of the individual beam portions, the ion density as a function of position within the cross section of the beam can be controlled.

EP0444935A3, drawing sheet 1
Sheet 1 of 1

Term

Term ended

Projected expiry passed 28 February 2011, 15.6 years ago.

  1. Priority
  2. Filed
  3. Published
  4. Projected expiry
  5. Today

1 sheet

  1. Sheet 1