EP0343846A3

Process for the preparation of polycrystalline diamond

Abstract

A process for the preparation of continuous polycrystalline diamond, especially diamond films, which comprises applying to a substrate diamond powder in an amount of from about one particle per ten square microns to about 10 particles per square micron with an average particle diameter of from about 0.1 to about 1.0 micron (more especially from about 0.1 to about 0.4 micron); heating the resulting powdered substrate subsequent to incorporation in a processing apparatus; introducing a mixture of gases into the chamber, which gases provide a supply of carbon and hydrogen; and decomposing the gas mixture.

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Projected expiry passed 18 May 2009, 17.4 years ago.

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Citations
ReferenceRelationCited during
PATENT ABSTRACTS OF JAPAN, vol. 11, no. 365 (C-460)[2812], 27th November 1987; & JP-A-62 138 395 (KYOCERA CORP.) 22-06-1987Non-patentSearch report
INTERNATIONAL JOURNAL OF REFRACTORY AND HARD METALS, vol. 7, no. 2, June 1988, pages 92-107, Shrewsbury, GB; P.-O. JOFFREAU et al.: "Low-pressure diamond growth on high-pressure diamond crystals pressed onto different substrates"Non-patentSearch report
JOURNAL OF APPLIED PHYSICS, vol. 63, no. 5, 1st March 1988, pages 1744-1748, American Institute of Physics, New York, US; C.-P. CHANG et al.: "Diamond crystal growth by plasma chemical vapor deposition"Non-patentSearch report
PATENT ABSTRACTS OF JAPAN, vol. 12, no. 92 (C-483)[2939], 25th March 1988; & JP-A-62 226 889 (TOSHIBA TUNGALOY CO., LTD) 05-10-1987Non-patentSearch report
PATENT ABSTRACTS OF JAPAN, vol. 13, no. 205 (C-595)[3553], 15th May 1989; & JP-A-01 024 092 (SHOWA DENKO K.K.) 26-01-1989Non-patentSearch report
PATENT ABSTRACTS OF JAPAN, vol. 13, no. 260 (C-607)[3608], 15th June 1989; & JP-A-01 061 397 (ASAHI DAIYAMONDO KOGYO K.K.) 08-03-1989Non-patentSearch report
PATENT ABSTRACTS OF JAPAN, vol. 13, no. 579 (C-668)[3927], 20th December 1989; & JP-A-1 242 490 (MITSUBISHI METAL CORP.) 27-09-1989Non-patentSearch report