EP0341017A3

Deposited-silicon film solar cell

Abstract

A thin-film photovoltaic solar cell features a thin polycrystalline silicon active semiconductor formed over a conductive ceramic substrate. Between the substrate and the adjacent active semiconductor layer is a barrier layer which provides for refelction of light, minimizes back surface recombination and prevents contamination of the active semiconductor.

EP0341017A3, drawing sheet 1 — Sheet 1 of 1

Term

Term ended

Projected expiry passed 2 May 2009, 17.4 years ago.

1 sheet

Sheet 1

Every citation, both waysCites: the store holds 1 of 2

Citations
Document	Relation	Office	Category	Cited during
EP0221767A2	Cites	European Patent Office (EPO)	A	Search report
PROC. 19TH IEEE PHOTOVOLTAIC SPECIALISTS CONF. May 1987, NEW ORLEANS, LOUISIANA, pages 1266 - 1270; A. M. BARNETT ET AL.: "DEVELOPMENT OF THIN SILICON-FILM SOLAR CELLS ON LOW COST SUBSTRATES"	Non-patent	–	–	Search report
PROC. 18TH IEEE PHOTOVOLTAIC SPECIALISTS CONF. October 1985, LAS VEGAS, NEVADA, pages 192 - 197; M. G. MAUK ET AL.: "THIN SILICON SOLAR CELLS WITH INTERNAL REFLECTION AND THEIR FABRICATION BY SOLUTION GROWTH"	Non-patent	–	–	Search report
PROC. 7TH EC PHOTOVOLTAIC SOLAR ENERGY CONF. October 1986, SEVILLA, SPAIN pages 1196 - 1198; M. G. MAUK ET AL.: "DEMONSTRATION OF OPTICAL CONFINEMENT IN SOLUTION-GROWN THIN-FILM SILICON SOLAR CELLS"	Non-patent	–	–	Search report
ELECTRONICS vol. 60, no. 10, 14 May 1987, NEW YORK page 22 "CERAMIC CUTS SOLAR CELL COSTS TO 16 CENTS PER WATT"	Non-patent	–	–	Search report

9 members in 5 offices

This recordMember, by publication datePriority claim

Priority claims5

Priority claims
Document	Office	Kind	Date
190138	United States of America	–	1988-05-04
19013888	United States of America	A	1988-05-04
19013888	United States of America	A	1988-05-04
190138	–	–	–
US19880190138	–	–	–

Members9

Family members, oldest first
Document	Office	Kind
EP0341017A2	European Patent Office (EPO)	A2	1989-11-08
JPH0277172A	Japan	A	1990-03-16
EP0341017A3This record	European Patent Office (EPO)	A3	1990-06-20
US5057163A	United States of America	A	1991-10-15
EP0341017B1	European Patent Office (EPO)	B1	1997-02-12
DE68927760D1	Germany	D1	1997-03-27
ES2099068T3	Spain	T3	1997-05-16
DE68927760T2	Germany	T2	1997-09-18
JP2774142B2	Japan	B2	1998-07-09

36 legal events, as 3 offices reported them to INPADOC

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Events

Legal events, newest first
	Event	Code	Office
2006-12-01	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2005-10-27	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2005-05-02	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2001-07-16	Announcement of lapse in spainLapsedFD2A	FD2A	ES
2001-02-01	Nl: lapsed or anulled due to non-payment of the annual feeLapsedNLV4	NLV4	EP
2000-12-01	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2000-03-03	Notification of lapseLapsedST	ST	FR
2000-01-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
1999-12-22	Gb: european patent ceased through non-payment of renewal feeCeasedGBPC	GBPC	EP
1999-05-03	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
1999-05-02	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
1999-04-27	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
1998-05-19	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
1998-04-27	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
1998-04-20	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
1998-02-04	No opposition filedOpposition26N	26N	EP
1997-12-19	No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE	PLBE	EP
1997-12-19	Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA	STAA	EP
1997-07-01	Nl: modifications (of names), taken from the european patent patent bulletinNLT2	NLT2	EP
1997-06-27	Fr: translation filedET	ET	EP
1997-05-16	Definitive protectionFG2A	FG2A	ES
1997-05-07	Party data changed (patent owner data changed or rights of a patent transferred)RAP2	RAP2	EP
1997-03-27	Corresponds to:REF	REF	EP
1997-03-06	It: translation for a ep patent filedITF	ITF	EP
1997-03-06	It: translation for a ep patent filedITF	ITF	EP
1997-02-12	Designated contracting statesAK	AK	EP
1996-12-24	(expected) grantORIGINAL CODE: 0009210GRAA	GRAA	EP
1996-10-29	Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOS IGRAGRAH	GRAH	EP
1996-07-26	Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOS IGRAGRAH	GRAH	EP
1996-05-04	Despatch of communication of intention to grantORIGINAL CODE: EPIDOS AGRAGRAG	GRAG	EP
1993-01-20	First examination report despatched17Q	17Q	EP
1990-12-05	Request for examination filed17P	17P	EP
1990-06-20	Designated contracting statesAK	AK	EP
1990-05-03	Search report despatchedORIGINAL CODE: 0009013PUAL	PUAL	EP
1989-11-08	Designated contracting statesAK	AK	EP
1989-09-23	Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI	PUAI	EP

Deposited-silicon film solar cell

Abstract

Term

Priority claims5

Members9

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Events

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Titles3

Classification

Designated states1