Nova Patents
EP0246447A3

Organic solder barrier for a semiconductor device

Abstract

A method for defining a solder barrier using a silylated positive photoresist is disclosed. The silylated positive photoresist layer (24) replaces the top chrome layer previously employed and defines the solder barriers and I/O select patterns. The personality pattern in the Cr-Cu layers (14, 16) is defined by the use of a positive photoresist which is etched to provide the copper etch mask. The etched copper is then used to etch the chrome. This avoids the incompatibility of the positive photo­resist with the alkaline chromium etchant.

Term

Term ended

Projected expiry passed 14 April 2007, 19.4 years ago.

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Every citation, both ways

Citations
DocumentRelationOfficeCategoryCited during
EP0136130A2CitesEuropean Patent Office (EPO)YSearch report
FR2541044A1CitesFranceYSearch report
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 18, no. 10, March 1976, page 3477, New York, US; L. KUHN et al.: "High-density, low-temperature solder reflow bonding of silicon chips to plastic substrates"Non-patent––Search report
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 23, no. 9, February 1981, page 4054, New York, US; K.M. GARDINER et al.: "Maskless solder bump interconnection process"Non-patent––Search report