A method of establishing a conductive via path

According to the method of establishing a conductive via path between spaced interlevel conductors, succes­sive layers of metallization (10,18) separated by a dielectric (14, 20) are formed. Holes (22, 24) for the vias through the dielectric and metallic layers are opened in one step to eliminate interlevel mashing. Metallic annular pads (32, 34) are employed at locations where contact may be established to another wiring level. The vias are self-aligned and taper (22-22ʹ, 24-24ʹ) from top to bottom. The method is applicable to both chip-­level and carrier-level multi-metallization structures.