Process for obtaining negative images from positive photoresists.

The present invention relates to a process for producing negative images from a positive-working photoresist, for example from a radiation-sensitive photoresist mixture, in which resins and naphthoquinonediazides which are soluble in aqueous alkalis are present as photosensitive compounds.

The production of positive-working photoresists is known and is described, for example, in US Pat. Nos. 3,666,473, 4,115,128 and 4,173,470. These include alkali-soluble phenol-formaldehyde novolak resins in combination with light-sensitive substances, usually substituted naphthoquinonediazide compounds. The resins and light-sensitive compounds are dissolved in an organic solvent or solvent mixture and applied in a thin layer to a support suitable for the particular purpose.

The resin component of these photoresist mixtures is soluble in aqueous alkaline solutions, but the photosensitive compound based on naphthoquinone has a solution-inhibiting effect on the resin. When selected areas of the coated carrier are exposed by means of actinic radiation, however, the photosensitive compound undergoes an exposure-related structural transformation and the solubility of the exposed layer areas becomes greater than that of the unexposed areas.

Because of this different solution behavior, the exposed areas of the photoresist layer are detached when the support is immersed in an alkaline developer solution, while the unexposed areas remain essentially unchanged, so that a positive relief image is obtained on the support.

In most cases, the exposed and developed substrate is treated with an etching solution. The photoresist layer protects the coated areas of the layer carrier from the etchant, which consequently can only act on the layer-free areas, ie in the case of a positive-working photoresist, on the areas exposed by actinic radiation. In this way, an etched image is generated on the substrate which corresponds to the mask, stencil or other template through which exposure was carried out before development.

The photoresist relief image generated on the substrate by the described method is suitable for various applications, e.g. B. for the production of exposure masks or semiconductor devices.

The criteria by which the suitability of a photoresist mixture for commercial purposes is assessed include the photosensitivity of the photoresist, the contrast after development, the resist dissolution and the adhesion of the resist layer to the substrate.

The resist resolution relates to the ability of a photoresist system to reproduce even the finest lines and spaces of a mask used for the exposure, the exposed and developed areas having a high degree of slope.

In many industrial fields of application, in particular in the production of semiconductor components, the photoresist used must also have a high resolution (1 μm and less) even with very small structure widths. This property, i.e. that is, the ability to display very small dimensions, in the size range of 1 µm or less, is critical to the large-scale manufacture of integrated circuits on silicon wafers and similar components.

The integration density on such a chip can only be increased by using photolithographic methods by increasing the resolution of the photoresist.

Photoresists are generally divided into positive and negative working photoresists. A negative working photoresist mixture is characterized in that the areas hit by the light during imagewise exposure are hardened. After removing the unexposed areas using a suitable developer, they form the image areas of the photoresist. In contrast, in the case of positive-working photoresists, the unexposed areas form the image areas. The areas hit by the light become soluble in aqueous alkaline developers through exposure. While mostly negative working photoresists are used for the industrial production of printed circuits, positive working photoresists are characterized by a much higher resolution and enable the reproduction of smaller picture elements. Therefore, positive-working photoresists are used in the production of circuits with a high integration density.

In practice, it is advantageous for a number of fields of application to convert a positive-working quinonediazide-based photoresist with high resolution so that it is suitable for negative processing.

Interest in an image reversal process is due to the benefits that such a process brings to manufacturing practice. The advantages of image inversion are among others in that there is no longer a need for a double set of complementary masks for the positive and negative imaging, that there is a larger resolution range and processing latitude than with exclusively positive imaging, and that the occurrence of standing waves is reduced and greater heat resistance is achieved.

In this connection, numerous methods for image reversal have already been proposed, such as, for example, SA MacDonald et al., "Image Reversal: The Production of a Negative Image in a Positive Photoresist", p. 114, IBM Research Disclosure, 1982; E. Alling et al., "Image Reversal of Positive Photoresist. A New Tool for Advancing Integrated Circuit Fabrication," Journal of the Society of Photo-Imaging Engineers, Vol. 539, p. 194, 1985; MV Buzuev et al., "Producing a Negative Image on a Positive Photoresist", SU No. 1,109,708; DE-PS 25 29 054, US-PS 4,104,070, DE-OS 33 25 022, corresponding to US-PS 4,581,321 and DE-OS 33 25 023, corresponding to US-PS 4,576,901.

However, each of these methods also has disadvantages. A major disadvantage of the image reversal processes currently used is that an additional process step is required, which either provides treatment with salt-forming compounds or the use of particularly high-energy exposure sources, such as, for example, electron beams.

It was an object of the present invention to provide a method for producing negative images from a positive-working photoresist which does not have the disadvantages of the known methods and which enables both positive and negative imaging in simple method steps and is distinguished by higher resolution and greater heat resistance. It was also an object of the invention to provide new crosslinking substances for the process.

The solution to this problem is based on a method of the type mentioned at the outset and is characterized by the combination of the following method steps:<ul id="ul0001" list-style="none"><li>A) Preparation of a photosensitive mixture consisting of<ul id="ul0002" list-style="none"><li>a) about 1 to 25 percent by weight, based on the solid components of the mixture, of a photosensitive compound of the general formula I.<chemistry id="chem0001" num="0001"><img file="EP0212482A2_D0001.tif" /></chemistry> wherein R₁ - 1,2-benzoquinone- (2) -diazide-4-sulfonyl-, 1,2-naphthoquinone- (2) -diazide-4-sulfonyl- or 1,2-anthraquinone- (2) -diazide-4-sulfonyl, R₂, R₃ R₄ are the same or different and are hydrogen, R₅, -OR₆ or -CO-R₇, R₅ and R₇ - alkyl, aryl or aralkyl and R₆ is hydrogen, alkyl, aryl, aralkyl or R₁,</li><li>b) about 75 to 99 percent by weight, based on the solid constituents of the mixture, of a novolak and / or polyvinylphenol, in particular poly-p-vinylphenol resin,</li><li>c) about 0.5 to about 20 percent by weight, based on the solid constituents of the mixture, consists of a crosslinking agent which, in the presence of acid, which results from the light decomposition products, has the ability to crosslink the resin according to b) and</li><li>d) a sufficient amount of solvent to dissolve the above compounds,</li></ul></li><li>B) coating a support with the light-sensitive mixture according to A),</li><li>C) predrying the solution to temperatures in the range from 20 to 100 ° C. until the solvent has essentially evaporated,</li><li>D) exposing the photosensitive layer to actinic radiation,</li><li>E) annealing the exposed layer to temperatures in the range from at least 95 ° C. to about 160 ° C. within 10 seconds and more, in which time the crosslinking takes place,</li><li>F) Remove the unexposed areas of the layer with an alkaline developer.</li></ul>

In a preferred embodiment of the process according to the invention, 2,3,4-trihydroxy-benzophenone-1,2-naphthoquinone- (2) -diazide-4-sulfonic acid trisester is used as the light-sensitive compound. The process is preferably carried out in such a way that the annealing is carried out at temperatures in the range from about 95 to about 150 ° C., in particular from about 112 to about 120 ° C., and within about 10 to about 90 seconds.

A crosslinker used is, for example, a compound of the general formula II (R₁O-CHR₃)_n-A- (CHR₃-OR₂)_m, (II) in which A = -B- or -BYB- and B = represents an optionally substituted mononuclear aromatic aromatic hydrocarbon or a heterocyclic aromatic compound containing oxygen or sulfur, Y = a single bond, C₁ to C₄-alkylene or alkylenedioxy, the chains of which may be interrupted by oxygen atoms, -O-, -S-, -SO₂-, -CO-, -CO₂-, -O-CO₂-, -CONH- or phenylenedioxy means R₁ and R₂ - hydrogen, C₁ to C₆ alkyl, cycloalkyl, optionally substituted aryl, aralkyl or acyl, R₃ - hydrogen, C₁ to C₄-alkyl or optionally substituted phenyl, n - 1 to 3 and m - 0 to 3, where n + m is at least 2, mean.

This ensures that an improved ratio of exposure energies to resulting line widths, a greater processing latitude, better image resolution after development, extensive elimination of undesirable reflection effects referred to as 'reflective notching', increased sensitivity to light, achieved greater thermal stability of the image obtained and better adhesion of the photoresist to the generally used substrates. Furthermore, the process control according to the invention has the advantage over the known processes that the process step of the final full-area exposure of the layer of actinic radiation is omitted before development.

To produce the photoresist structure according to the invention, a layer of the light-sensitive mixture described above is first applied to a suitable substrate and dried. The photosensitive mixture contains a solvent, a crosslinking agent, a resinous binder and a photosensitive compound having 1,2-quinonediazide-4-sulfonyl groups. Suitable binders are, for example Novolaks, polyvinylphenols, especially poly-p-vinylphenols.

The production of novolak resins which are suitable as binders for light-sensitive mixtures is known. It is described, for example, by A. Knop and W. Scheib in "Chemistry and Application of Phenolic Resins", Chap. 4, Springer-Verlag, New York, 1979. The use of polyvinylphenols and p-vinylphenols is known from US Pat. Nos. 3,869,292 and 4,439,516. The use of o-quinonediazides is also known to the person skilled in the art and is described, for example, in J. Kosar, "Light Sensitive Systems", chap. 7.4, John Wiley &amp; Sons, New York, 1965.

These photosensitive compounds, which also form part of the photoresist mixtures according to the invention, are preferably selected from the group of photosensitive compounds based on substituted o-naphthoquinonediazides, as are usually used in the recipes for positive-working photoresist mixtures. Suitable compounds of this type are described, for example, in US Pat. Nos. 2,797,213, 3,106,465, 3,148,983, 3,130,047, 3,201,329, 3,785,825 and 3,802,885.

A 1,2-quinonediazide-4-sulfonic acid ester of a phenol derivative is used as the photosensitive compound. Obviously, the position of the sulfonyl group is not decisive in the context of the present invention, but the position of the sulfonyl group, ie benzoquinones, naphthoquinones or anthraquinones can be used, but in any case the oxygen in the 1 position and the diazo group in the 2nd Position and the sulfonyl group in the 4 position. The type of phenolic component to which the diazide is attached also does not appear to be important. For example, it can be a cumylphenol derivative according to US Pat. No. 3,640,992, or a mono-, di- or trihydroxyphenyl alkyl ketone or a mono-, di- or trihydroxybenzophenone according to US-A 4,499,171.

Examples of suitable light-sensitive compounds are: 1,2-naphthoquinonediazide-4-sulfonyl chlorides, which are combined with a phenolic compound, such as, for example a hydroxybenzophenone such as trihydroxybenzophenone and especially 2,3,4-trihydroxybenzophenone have been condensed; 2,3,4-trihydroxyphenylpentyl ketone-1,2-naphthoquinone (2) diazide-4-sulfonic acid trisester or other alkylphenones; 2,3,4-trihydroxy-3'-methoxybenzophenone-1,2-naphthoquinone (2) diazide-4-sulfonic acid trisester; 2,3,4-trihydroxy-3'-methylbenzophenone-1,2-naphthoquinone (2) diazide-4-sulfonic acid trisester and 2,3,4-trihydroxybenzophenone-1,2-naphthoquinone- (2) diazide-4 -sulfonic acid trisester.

A crosslinking agent is a compound which is capable of crosslinking the novolak or polyvinylphenol resin described in the presence of the amount and concentration of acid which is produced when the diazide is exposed to actinic radiation. To initiate the crosslinking, a temperature is required which is sufficient to enable the acid to diffuse onto the crosslinking agent, but which is below the decomposition temperature of the diazide. In general, these are compounds that can form a carbonium ion under the acid and temperature conditions described.

Suitable connections are: 1,4-bis-hydroxymethyl-benzene, 1,3-bis-hydroxymethyl-benzene, 1,4-bis-methoxymethyl-benzene, 1,5-bis-acetoxymethyl-naphthalene, 1,4-bis-hydroxymethyl-naphthalene, 9,10-bis-methoxymethyl-anthracene, 2,5-bis (hydroxymethyl) furan, 2,5-bis-ethoxymethyl-thiophene, Bis-methoxymethyl-diphenylene oxide, Bis-methoxymethyl-dimethyldiphenylene oxide, 2,6-bis-hydroxymethyl-naphthalene, 1,4-bis (α-hydroxymethyl) benzene, 1,4-bis (α-hydroxybenzyl) benzene, 4,6-dimethyl-1,3-bis-hydroxymethyl-benzene, 2,5-dimethyl-1,4-bis-hydroxymethyl-benzene, 2,4,6-trimethyl-1,3-bis-hydroxymethyl-benzene, 2,4,6-trimethyl-1,3,5-tris-methoxymethyl-benzene, 2,3,5,6-tetramethyl-1,4-bis-acetoxymethyl-benzene, 2,4,5,6-tetramethyl-1,3-bis-ethoxymethyl-benzene, 4,4'-bis-acetoxymethyl-diphenylmethane, 4,4'-bis-methoxymethyl-diphenyl, 2-methyl-1,5-bis-acetoxymethyl-naphthalene, 2-ethyl-9,10-bis-methoxymethyl-anthracene, 4,6-diisopropyl, 1,3-bis-hydroxymethyl-benzene, 4,6-diisopropyl-1,3-bis-methoxymethyl-benzene, 4,4'-bis-acetoxymethyl-diphenyl sulfone, 4,4'-bis-methoxymethyl-benzophenone, 2,6-bis-hydroxymethyl-4-chlorophenol, 2,6-bis-hydroxymethyl-4-methyl-anisole, 1,3-bis (3-hydroxymethylphenoxy) propane, 1,3-dihydroxymethyl-2-methoxy-5-n-hexyl-benzene, 1,3-dihydroxymethyl-2-ethoxy-5-ethyl-benzene, 1,3-dihydroxymethyl-2-benzyloxy-5-methoxycarbonyl-benzene, 1,3-dihydroxymethyl-2-methoxy-5-bromo-benzene, 1,3-dihydroxymethyl-2-methoxy-5-cumyl-benzene, 1,3-dihydroxymethyl-2-ethoxy-5-methylmercapto-benzene, 1,3-dihydroxymethyl-2-ethoxy-5-phenoxy-benzene, 1,3-dihydroxymethyl-2,5-diethoxy-benzene, 1,3-dihydroxymethyl-2-methoxy-5-benzyl-benzene, 1,3-dimethoxymethyl-2-methoxy-5-fluoro-benzene, 1,3-dimethoxymethyl-2-ethoxy-5-methoxy-benzene, 1,3-dimethoxymethyl-2-methoxy-5-phenyl-benzene, Bis- [2- (4-hydroxymethylphenoxy) ethyl] ether, 1,3-dimethoxymethyl-2-ethoxy-5-bromo-benzene, 1,3-diacetoxymethyl-2-ethoxy-5-tert-butyl-benzene, 1,3-diacetoxymethyl-2-methoxy-5-phenylmercapto-benzene, 1,3-diacetoxymethyl-2-methoxy-5-chlorobenzene, 1,3-diacetoxymethyl-2,5-dimethoxy-benzene, 1,3-bis (2-methyl-4-benzyl-6-hydroxymethylphenoxy) propane, Bis (3,5-hydroxymethyl-4-hydroxyphenyl) methane, Dihydroxymethyl hydroquinone dimethyl ether, 4-methoxy-3,5-bis-hydroxymethyl-diphenyl ether, Bis (4-ethoxy-5-methyl-3-hydroxymethyl-phenyl) sulfone, 4,4'-bis-hydroxymethyl diphenyl ether, 4,4'-bis-acetoxymethyl diphenyl ether, 4,4'-bis-methoxymethyl diphenyl ether, 4,4'-bis-ethoxymethyl diphenyl ether, 2,4'-bis-methoxymethyl diphenyl ether, 2,4,4'-tris-methoxymethyl-diphenyl ether, 2,4,2'-tris-methoxymethyl-diphenyl ether, 2,4,2 ', 4'-tetrakis methoxymethyl diphenyl ether, Bis-methoxymethyl-4,4'-dimethyl-diphenyl ether, Bis-methoxymethyl-2,4-dimethoxy-5-methyl-diphenyl ether, Bis-methoxymethyl-3,3'-dimethyl-diphenyl sulfide, Bis-methoxymethyl-2,4'-dimethoxydiphenyl sulfide, 2,2'-bis (4-hydroxymethylphenoxy) diethyl ether, 2,2'-dimethyl-4,4'-bis-hydroxymethyl diphenyl ether, 1,3-bis (4-methoxymethylphenoxy) benzene, 1,3-bis (4-methoxymethylphenoxy) propane, 4,4'-bis-methoxymethyl-diphenyl sulfide, 2,2-bis (4-methoxymethylphenyl) propane, 4,4'-bis-phenoxymethyl diphenyl ether, Bis-methoxymethyl-4-phenoxydiphenyl sulfide, Bis-methoxymethyl-2-isopropyl-5-methyl-diphenyl ether, Bis-methoxymethyl-3-bromo-4-methoxy-diphenyl ether, Bis-methoxymethyl-4-nitro-diphenyl ether, 2,2'-bis (3,5-hydroxymethyl-4-hydroxyphenyl) propane.

These preferably include 2,6-dimethylol-p-cresol according to US Pat. No. 4,404,272, 4,4'-bis-methoxymethyl diphenyl ether and epoxy cresol novolak resins which correspond to the general formula III:<chemistry id="chem0002" num="0002"><img file="EP0212482A2_D0002.tif" /></chemistry> where n = 1 to 1o.

Compounds such as 2,5-bis (hydroxymethyl) furan, 2,5-bis (ethyloxymethyl) thiophene, bis (3,5-hydroxymethyl-4-hydroxyphenyl) methane, 4, are also particularly suitable as crosslinkers. 4-bis-acetoxymethyl-diphenyl ether, 1,4-bis (α-hydroxybenzyl) benzene, 2,6-bis-hydroxymethyl-4-methyl-anisole or 2,2-bis (3,5-hydroxymethyl-4 -hydroxyphenyl) propane, which is used alone or in a mixture.

To produce the light-sensitive mixture, the constituents are dissolved in a suitable solvent mixture. The proportion of the resinous binder in the finished mixture is preferably about 75 to 99 percent by weight, in particular about 80 to 90 percent by weight, and very particularly preferably about 82 to 85 percent by weight, in each case based on the total solids, ie non-solvent, portion of the mixture. The proportion of the diazide is preferably 1 to 25 percent by weight, in particular approximately 1 to 20 percent by weight, and very particularly preferably approximately 10 to 18 percent by weight, in each case based on the solid constituents of the mixture, ie non-solvent fraction of the finished mixture. The proportion of the crosslinking agent is preferably about 0.5 to 20 percent by weight, in particular about 1 to 10 percent by weight, and very particularly preferably about 3 to 6 percent by weight, based on the solid components of the mixture. The resinous binder, the crosslinking agent and the diazide are selected with suitable solvents, alone or in a mixture, from, for example Propylene glycol alkyl ether acetate, butyl acetate, xylene, ethylene glycol monoethyl ether acetate and preferably mixed with propylene glycol methyl ether acetate.

The solution of binder, photosensitive compound, crosslinking agent and solvent can also contain additives, such as dyes, agents for preventing streaking, leveling agents, plasticizers, adhesion promoters, substances that increase photosensitivity, other solvents and wetting agents, e.g. B. nonionic wetting agents are added.

Examples of dyes which are suitable for the photoresist mixtures according to the invention are methyl violet 2B (CI 42 535), crystal violet (CI 42 555), malachite green (CI 42 000), Victoria blue B (CI 44 045) and neutral red (CI 50 040); they can be added in an amount of 1 to 10 percent by weight, based on the solid components of the mixture. The dye additives contribute to better image resolution since they prevent backscattering of light from the wearer.

Streak preventing agents can be added in an amount up to 5 percent by weight based on the solids of the mixture.

Suitable plasticizers are, for example, phosphoric acid tri (β-chloroethyl) ester, stearic acid, dicampher, polypropylene, acetal resins, phenoxy resins and alkyl resins. They are added in an amount of 1 to 10 percent by weight, based on the solid components of the mixture. The addition of plasticizers improves the coating properties of the mixture, so that it is possible to apply a smooth layer of uniform thickness.

Suitable adhesion promoters include, for example, β- (3,4-epoxycyclohexyl) ethyl trimethoxysilane, vinyl trichlorosilane and γ-aminopropyl triethoxysilane. They are added in an amount of up to 4 percent by weight, based on the solid components of the mixture.

To increase the sensitivity to light, picric acid, nicotinic acid or nitrocinnamic acid, for example, can be added in an amount of up to 20 percent by weight, based on the solid components of the mixture. These substances increase the solubility of the light-sensitive layer both in the exposed and in the unexposed areas. These substances are therefore added in those cases where rapid development is particularly important, even if this is at the expense of contrast. The loss of contrast stems from the fact that, after the addition of agents which increase the sensitivity to light, the developer not only dissolves the exposed areas of the light-sensitive layer more quickly, but also that there is an increased loss of layer at the unexposed areas.

The solvent content of the finished mixture is up to 95 percent by weight, based on the total weight.

Nonionic wetting agents that can be used include, for example, nonylphenoxypoly (ethyleneoxy) ethanol, octylphenoxy (ethyleneoxy) ethanol, and dinonylphenoxypoly (ethyleneoxy) ethanol. They are used in an amount of up to 10 percent by weight, based on the total solid weight.

The ready-prepared photoresist solution is applied to a suitable substrate using customary processes, such as dipping, spraying or spinning. If coating is carried out, for example, in the centrifugal process, the solids content of the photoresist solution is set to a certain percentage in order to achieve the desired layer thickness depending on the centrifugal device used and the spin-on time.

Materials for the layer support include, for example, silicon, aluminum or polymeric resins, silicon dioxide, doped silicon dioxide, silicon nitride, polysilicon, tantalum, copper, ceramic and aluminum-copper mixtures.

Photoresist layers of the type described are particularly well suited for application to silicon wafers with thermally generated silicon dioxide layers, as are used in the production of microprocessors and other semiconductor components. An aluminum substrate with an aluminum oxide layer can also be used.

In addition, numerous polymeric resins, in particular transparent polymers, such as polyester, are suitable as layer supports.

After the solution has been applied to the support, the support is subjected to predrying at about 20 ° C. to 100 ° C. This heat treatment is carried out in order to reduce and control the residual solvent concentration in the photoresist without causing any noticeable thermal decomposition of the photosensitive compound. The general aim is to reduce the solvent content to a minimum, and this first heat treatment is therefore continued until the solvents have practically completely evaporated and a thin layer of photoresist mixture, the thickness of which is approximately 1 μm, is deposited on the substrate remains. The temperature in this treatment is preferably between approximately 50 and 90 ° C., in particular between approximately 70 and 90 ° C. This treatment step is ended when the proportion of solvent no longer drops significantly. The choice of the respective temperature and duration depends on the resist properties desired by the user, the equipment used and the coating times desired for commercial purposes.

In the case of treatment with the aid of hot plates, so-called "hot plates", a duration of up to 3 minutes, preferably up to 1 minute, makes economic sense. For example, predrying can be carried out at 90 ° C. within 30 seconds. The layer support can then be exposed imagewise with actinic radiation, in particular with UV radiation, through suitable masks, negatives, stencils, etc. The term actinic radiation should also be understood to mean short-wave visible light, electron beams, ion beams or X-rays.

The exposure is followed by annealing, a second heat treatment. It takes place at a temperature in the range between approximately 95 and 160 ° C., preferably between 95 and 150 ° C., in particular between 112 and 120 ° C. The treatment is carried out with a heating plate system. Their duration is between about 10 seconds and more, in which time the resin crosslinks. In general, it does not exceed about 120 seconds. These are preferably about 10 to 90 seconds, in particular about 30 to 90 seconds, and a duration of about 15 to 45 seconds can also be very advantageous. Treatment may exceed the specified time, but this generally does not lead to a further improvement in the result. The time required depends on the composition of the photoresist mixture and the substrate. The heating causes the diffusion of the acid generated by exposure to the crosslinking component. As a result of the annealing, the diazide is also converted into a compound containing carboxylic acid, such as, for example, indenecarboxylic acid, which is soluble in aqueous alkaline solutions.

The temperature and duration of predrying and tempering, ie the first and second heat treatment, are selected on the basis of the properties desired by the user and set to the best value in each case.

If desired, after the material has been tempered and cooled, the layer can be exposed to actinic radiation over the entire surface.

Next, the supports coated and exposed with the photoresist mixture are immersed in a suitable developer solution. The solution is preferably agitated, which can be done, for example, by blowing nitrogen through it. The substrates remain in the developer solution until the photoresist layer is completely or almost completely removed at the unexposed areas. The known aqueous-alkaline developer solutions are preferably used as developers, such as sodium hydroxide and tetramethylammonium hydroxide solutions.

After the development, a further heat treatment of the coated wafers can be carried out in order to increase the adhesion of the layer and its chemical resistance to etching solutions and other substances. The heat treatment following the development is, for example, a treatment of the support and the layer applied thereon at temperatures below the softening point of the coating.

For industrial applications, in particular in the production of semiconductor components on silicon substrates with a silicon dioxide layer, the developed substrates can be treated with a buffered etching solution based on hydrofluoric acid. The photoresist mixtures according to the invention are resistant to such acid-based etching solutions and ensure effective protection of the unexposed areas of the support coated with the photoresist mixture.

The advantages of the manufacturing method according to the invention and its application will be explained in detail with the aid of the following examples. However, the invention is not intended to be limited to these examples and the conditions, parameters or values ​​specified therein.

example 1

The photoresist mixture used consists of a solution in propylene glycol monomethyl ether acetate which has a solids content of 5 percent by weight dimethylol-p-cresol, 6 percent by weight 2,3,4-trihydroxy-3'-methylbenzophenone-1,2-naphthoquinone-2-diazide-4-sulfonic acid trisester and 89 percent by weight cresol novolak resin.

With this mixture, silicon wafers are spin-coated at a speed of 4000 rpm and predried in a forced air oven at 90 ° C. for 30 minutes. In a 220 Micralign projection exposure device from Perkin Elmer (USA), exposure is made to actinic radiation through a photomask which contains a test image for checking the image resolution. The aperture number. 4th selected and the exposure speed varies between 200 and 400 arbitrarily determined units. These different exposure speeds (each exposure speed stands for a separate test) correspond to 20 to 10 mJ / cm², measured with the aid of an intensity measuring device from OAI (USA) for the wavelength range from 365 to 436 nm. The photo mask consists of a test image for checking the image resolution, which has both individual lines and pairs of the same line and spacing width. The width of the individual picture elements is 1.0 to 3.0 µm, the increase being 0.25 µm in each case. Following exposure, the wafers are successively subjected to a heat treatment by means of a heating plate system from MTI Inc. (USA). The temperatures are 110 to 150 ° C, the treatment time is up to 60 seconds. A relief image is now visible under an optical microscope with monochromatic illumination of 520 nm.

The exposed and heat-treated wafers are developed in a dipping process for 3 minutes with gentle agitation of the developer bath using a developer of the "AZ 433 MIF Developer" brand (0.33N tetramethylammonium hydroxide solution, manufacturer American Hoechst Corporation, USA), rinsed with deionized water and spun dry. They are then examined under a scanning electron microscope with a magnification of 10,000 times. It is found that openings of 1 .mu.m and larger can be clearly seen as properly developed.

Example 2

Example 1 was repeated with the modification that the photoresist mixture consists of a solution in propylene glycol monomethyl ether acetate which has a solids content of 5% by weight of 2,6-dimethylol-4-cresol, 6% by weight of 2,3,4-trihydroxy-3'-methoxybenzophenone-1 , 2-naphthoquinone- (2) -diazide-4-sulfonic acid trisester and 89 percent by weight cresol novolak resin.

Results comparable to those in Example 1 were achieved.

Example 3

Example 1 was repeated with the modification that the photoresist mixture consists of a solution in propylene glycol monomethyl ether acetate which has a solids content of 5% by weight 2,6-dimethylol-4-cresol, 6% by weight 2,3,4-trihydroxy-phenylpentyl-ketone-1, Has 2-naphthoquinone- (2) -diazide-4-sulfonic acid trisester and 89 weight percent cresol novolak resin.

Results comparable to those in Example 1 were achieved.

Example 4

Example 1 was repeated with the modification that the photoresist mixture consists of a solution in propylene glycol monomethyl ether acetate which has a solids content of 5% by weight 4,4'-bis-methoxy-methyl-diphenyl ether, 6% by weight 2,3,4-trihydroxy-benzophenone-1 , 2-naphthoquinone- (2) -diazide-4-sulfonic acid trisester and 89 percent by weight cresol novolak resin.

Results comparable to those in Example 1 were achieved.

Example 5

Example 1 was repeated with the modification that the photoresist mixture consists of a solution in propylene glycol monomethyl ether acetate which has a solids content of 5% by weight 4,4'-bis-methoxymethyl-diphenyl ether, 6% by weight 2,3,4-trihydroxy-3'-methylbenzophenone Has 1,2-naphthoquinone- (2) -diazide-4-sulfonic acid trisester and 89% by weight cresol novolak resin.

Results comparable to those in Example 1 were achieved.

Example 6

Example 1 was repeated with the modification that the photoresist mixture consists of a solution in propylene glycol monomethyl ether acetate which has a solids content of 5% by weight 4,4'-bis-methoxymethyl-diphenyl ether, 6% by weight 2,3,4-trihydroxy-3'-methoxybenzophenone Has 1,2-naphthoquinone- (2) -diazide-4-sulfonic acid trisester and 89% by weight cresol novolak resin.

Results comparable to those in Example 1 were achieved.

Example 7

Example 1 was repeated with the modification that the photoresist mixture consists of a solution in propylene glycol monomethyl ether acetate which has a solids content of 5% by weight 4,4'-bis-methoxymethyl-diphenyl ether, 6% by weight 2,3,4-trihydroxy-phenylpentyl ketone-1, Has 2-naphthoquinone- (2) -diazide-4-sulfonic acid trisester and 89 weight percent cresol novolak resin.

Results comparable to those in Example 1 were achieved.

Example 8

Example 1 was repeated with the modification that the photoresist mixture consists of a solution in propylene glycol monomethyl ether acetate which has a solids content of 5% by weight of epoxycresol novolak resin, 6% by weight of 2,3,4-trihydroxy-benzophenone-1,2-naphthoquinone- (2) - diazid-4-sulfonic acid trisester and 89 weight percent cresol novolak resin.

Results comparable to those in Example 1 were achieved.

Examples 9 to 14

Example 1 was repeated with the modification that the photoresist mixture consists of a solution in propylene glycol monomethyl ether acetate which has a solids content of 89% by weight of cresol novolak resin and the following substances, in% by weight:<ul id="ul0003" list-style="none"><li>9. 5% 2,5-bis (hydroxymethyl) furan, 6% 2,3,4-trihydroxy-3'-methylbenzophenone-1,2-naphthoquinone-2-diazide-4-sulfonic acid trisester;</li><li>10th 5% 2,5-bis (ethoxymethyl) thiophene, 6% 2,3,4-trihydroxy-3'-methylbenzophenone-1,2, -naphthoquinone-2-diazide-4-sulfonic acid trisester;</li><li>11. 5% bis (3,5-hydroxymethyl-4-hydroxyphenyl) methane, 6% 2,3,4-trihydroxy-3'-methylbenzophenone-1,2-naphthoquinone-2-diazide-4-sulfonic acid trisester;</li><li>12th 5% 4,4'-bis-acetoxymethyl diphenyl ether, 6% 2,3,4-trihydroxy-benzophenone-1,2-naphthoquinone-2-diazide-4-sulfonic acid trisester;</li><li>13. 5% 1,4-bis (hydroxybenzyl) benzene, 6% 2,3,4-trihydroxy-benzophenone-1,2-naphthoquinone-2-diazide-4-sulfonic acid trisester;</li><li>14. 2.5% 2,6-bis-hydroxymethyl-4-methyl-anisole, 2.5% 2,2-bis (3,5-hydroxymethyl-4-hydroxyphenyl) propane, 6% 2,3,4-trihydroxy-benzophenone-1,2-naphthoquinone-2-diazide-4-sulfonic acid trisester;</li></ul>

Results comparable to those in Example 1 were achieved.