Nova Patents
DE69918643D1

GaN film having a reduced threading dislocations density and fabrication method thereof

Abstract

This record has no abstract on file.

Term

Term ended

Expired 26 November 2019, 6.8 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

25 members in 9 offices

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33630798JapanA

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JPH1044178AJapanA
CA2247314A1CanadaA1
WO9829228A1World Intellectual Property Organization (WIPO)A1
AU5339898AAustraliaA
EP0890423A1European Patent Office (EPO)A1
EP1005068A2European Patent Office (EPO)A2
JP2000164929AJapanA
KR20000035610ARepublic of KoreaA
EP1005068A3European Patent Office (EPO)A3
TW426989BTaiwan Province of ChinaB
EP0890423A4European Patent Office (EPO)A4
US2002064641A1United States of AmericaA1
US6399189B1United States of AmericaB1
US2002115267A1United States of AmericaA1
US2003044594A1United States of AmericaA1
US6576533B2United States of AmericaB2
US2003168763A1United States of AmericaA1
US6620495B1United States of AmericaB1
EP1005068B1European Patent Office (EPO)B1
DE69918643D1This recordGermanyD1
DE69918643T2GermanyT2
US7048879B2United States of AmericaB2
KR100700677B1Republic of KoreaB1
JP4032538B2JapanB2
JP4299375B2JapanB2