DE69615916D1
Voltage-clamped power accumulation-mode MOSFET
Abstract
This record has no abstract on file.
Term
Term ended
Expired 31 May 2016, 10.3 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
45 members in 6 offices
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 45905495 | United States of America | A | |
| 459054 | – | – | – |
| US19950459054 | – | – | – |
Members45
| Document | Office | Kind | |
|---|---|---|---|
| EP0746029A2 | European Patent Office (EPO) | A2 | |
| EP0746030A2 | European Patent Office (EPO) | A2 | |
| EP0746029A3 | European Patent Office (EPO) | A3 | |
| EP0746030A3 | European Patent Office (EPO) | A3 | |
| JPH09102605A | Japan | A | |
| JPH09102607A | Japan | A | |
| US5856692A | United States of America | A | |
| EP0899791A2 | European Patent Office (EPO) | A2 | |
| KR19990024045A | Republic of Korea | A | |
| KR19990037016A | Republic of Korea | A | |
| JPH11154748A | Japan | A | |
| JPH11195788A | Japan | A | |
| EP0899791A3 | European Patent Office (EPO) | A3 | |
| JP2987327B2 | Japan | B2 | |
| US5998836A | United States of America | A | |
| US5998837A | United States of America | A | |
| EP0962987A2 | European Patent Office (EPO) | A2 | |
| JP2988871B2 | Japan | B2 | |
| JP2997247B2 | Japan | B2 | |
| KR20000005824A | Republic of Korea | A | |
| JP2000031484A | Japan | A | |
| US6049108A | United States of America | A | |
| US6078090A | United States of America | A | |
| US6140678A | United States of America | A | |
| TW410479B | Taiwan Province of China | B | |
| US6204533B1 | United States of America | B1 | |
| EP0746029B1 | European Patent Office (EPO) | B1 | |
| EP0746030B1 | European Patent Office (EPO) | B1 | |
| DE69615916D1This record | Germany | D1 | |
| DE69617098D1 | Germany | D1 | |
| EP0962987A3 | European Patent Office (EPO) | A3 | |
| DE69617098T2 | Germany | T2 | |
| KR100326475B1 | Republic of Korea | B1 | |
| TW486728B | Taiwan Province of China | B | |
| DE69615916T2 | Germany | T2 | |
| EP0746029B9 | European Patent Office (EPO) | B9 | |
| KR100429475B1 | Republic of Korea | B1 | |
| KR100510096B1 | Republic of Korea | B1 | |
| EP0962987B1 | European Patent Office (EPO) | B1 | |
| DE69941415D1 | Germany | D1 | |
| EP0899791B1 | European Patent Office (EPO) | B1 | |
| DE69841541D1 | Germany | D1 | |
| JP2011035410A | Japan | A | |
| JP4671456B2 | Japan | B2 | |
| JP4796220B2 | Japan | B2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| No opposition during term of oppositionOpposition8364 | 8364 |
Numbers
- Publication, DOCDB
- 69615916
- Publication, EPODOC
- DE69615916D
- Application
- 69615916
- Application, DOCDB
- 69615916
- Application, EPODOC
- DE19966015916T
Titles2
- English
- Voltage-limited power enhancement MOSFET
- German
- Spannungsbegrenzter Leistungs-Anreicherungs-MOSFET
Classification
- CPC, 2
- H01L27/0255
- H01L29/7828
- IPC, 4
- H01L29 866
- H01L27 02
- H01L27 04
- H01L29 78