DE69317940D1

Manufacturing method for semiconductor device having capacitor

Abstract

This record has no abstract on file.

Term

Term ended

Expired 14 June 2013, 13.3 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

29 members in 4 offices

This recordMember, by publication datePriority claim

Priority claims40

Priority claims
DocumentOfficeKindDate
15325692JapanA
15325692JapanA
17804492JapanA
17804492JapanA
26454692JapanA
26454692JapanA
26454792JapanA
26454792JapanA
27838192JapanA
27838192JapanA
28855192JapanA
28855192JapanA
29106592JapanA
29106592JapanA
29106692JapanA
29106692JapanA
31157692JapanA
31157692JapanA
2393393JapanA
2393393JapanA
15325692
17804492
2393393
26454692
26454792
27838192
28855192
29106592
29106692
31157692
JP19920153256
JP19920178044
JP19920264546
JP19920264547
JP19920278381
JP19920288551
JP19920291065
JP19920291066
JP19920311576
JP19930023933

Members29

Family members, oldest first
DocumentOfficeKind
EP0574275A1European Patent Office (EPO)A1
JPH05343254AJapanA
JPH0625869AJapanA
JPH06120072AJapanA
JPH06120425AJapanA
JPH06132479AJapanA
JPH06140275AJapanA
JPH06140567AJapanA
JPH06140568AJapanA
JPH06157033AJapanA
JPH06234551AJapanA
EP0789395A2European Patent Office (EPO)A2
US5717233AUnited States of AmericaA
EP0574275B1European Patent Office (EPO)B1
EP0789395A3European Patent Office (EPO)A3
DE69317940D1This recordGermanyD1
DE69317940T2GermanyT2
JP2912776B2JapanB2
JP2998870B2JapanB2
US6080617AUnited States of AmericaA
US6126752AUnited States of AmericaA
JP3226329B2JapanB2
JP3255731B2JapanB2
JP3265677B2JapanB2
JP3282234B2JapanB2
JP3376611B2JapanB2
EP0789395B1European Patent Office (EPO)B1
DE69333864D1GermanyD1
DE69333864T2GermanyT2