ATE550461T1
Nitride semiconductor substrate
Abstract
This record has no abstract on file.
Term
Term ended
Projected expiry passed 9 April 2018, 8.5 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
42 members in 8 offices
Priority claims8
| Document | Office | Kind | Date |
|---|---|---|---|
| 9331597 | Japan | A | |
| 17449497 | Japan | A | |
| 18107197 | Japan | A | |
| 20147797 | Japan | A | |
| 27744897 | Japan | A | |
| 29009897 | Japan | A | |
| 32499797 | Japan | A | |
| 9801640 | Japan | W |
Members42
| Document | Office | Kind | |
|---|---|---|---|
| CA2258080A1 | Canada | A1 | |
| WO9847170A1 | World Intellectual Property Organization (WIPO) | A1 | |
| JPH11191637A | Japan | A | |
| JPH11191657A | Japan | A | |
| JPH11191659A | Japan | A | |
| CN1223009A | China | A | |
| JPH11219910A | Japan | A | |
| EP0942459A1 | European Patent Office (EPO) | A1 | |
| TW406445B | Taiwan Province of China | B | |
| US6153010A | United States of America | A | |
| US2002046693A1 | United States of America | A1 | |
| US2003037722A1 | United States of America | A1 | |
| JP2003101159A | Japan | A | |
| JP3456413B2 | Japan | B2 | |
| JP2004006886A | Japan | A | |
| JP3491538B2 | Japan | B2 | |
| JP3496512B2 | Japan | B2 | |
| US2004094773A1 | United States of America | A1 | |
| US6756611B2 | United States of America | B2 | |
| CN1159750C | China | C | |
| CN1516238A | China | A | |
| JP2004253817A | Japan | A | |
| EP0942459A4 | European Patent Office (EPO) | A4 | |
| US6940103B2 | United States of America | B2 | |
| US2005202682A1 | United States of America | A1 | |
| JP3800146B2 | Japan | B2 | |
| US7083679B2 | United States of America | B2 | |
| US7154128B2 | United States of America | B2 | |
| CN1292458C | China | C | |
| US2007057276A1 | United States of America | A1 | |
| CN1933195A | China | A | |
| CA2258080C | Canada | C | |
| JP2008034862A | Japan | A | |
| US7442254B2 | United States of America | B2 | |
| CN100492687C | China | C | |
| JP4314887B2 | Japan | B2 | |
| EP2234142A1 | European Patent Office (EPO) | A1 | |
| JP4637503B2 | Japan | B2 | |
| USRE42770E | United States of America | E | |
| EP0942459B1 | European Patent Office (EPO) | B1 | |
| AT550461T | Austria | T | |
| ATE550461T1This record | Austria | T1 |
Numbers
- Application
- 98912742
Titles2
- English
- GROWTH METHOD FOR A NITRIDE SEMICONDUCTOR
- German
- WACHSTUMSMETHODE FÜR EINEN NITRID-HALBLEITER
Classification
- CPC, 29
- C30B25/02
- B82Y20/00
- C23C16/042
- C23C16/303
- C30B29/40
- C30B29/403
- C30B29/406
- H01S5/0213
- H01S5/0422
- H01S5/2201
- H01S5/3211
- H01S5/3216
- H01S5/34333
- H01S2301/173
- H01S2304/12
- H01S5/32025
- H10H20/01335
- H10H20/817
- H10P14/2901
- H10P14/2926
- H10P14/2921
- H10P14/3248
- H10P14/3216
- H10P14/3442
- H10P14/3416
- H10P14/272
- H10P14/276
- H10P14/271
- H10P14/24
- IPC, 7
- C23C16 04
- C23C16 30
- C30B25 02
- H01L33 00
- H01L33 16
- H01S5 02
- H10P14 24