AT550461T
Nitride semiconductor substrate
Abstract
This record has no abstract on file.
Term
Term ended
Expired 9 April 2018, 8.5 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
8 priority claims, no other members on record
Priority claims8
| Document | Office | Kind | Date |
|---|---|---|---|
| 9331597 | Japan | A | |
| 17449497 | Japan | A | |
| 18107197 | Japan | A | |
| 20147797 | Japan | A | |
| 27744897 | Japan | A | |
| 29009897 | Japan | A | |
| 32499797 | Japan | A | |
| 9801640 | Japan | W |
Numbers
- Application
- 98912742
Titles2
- German
- WACHSTUMSMETHODE FÜR EINEN NITRID-HALBLEITER
- English
- GROWTH METHOD FOR A NITRID SEMICONDUCTOR
Classification
- CPC, 30
- C30B25/02
- B82Y20/00
- C23C16/042
- C23C16/303
- C30B29/40
- C30B29/403
- C30B29/406
- H01L21/0237
- H01L21/0242
- H01L21/02433
- H01L21/02458
- H01L21/02502
- H01L21/0254
- H01L21/02576
- H01L21/0262
- H01L21/02639
- H01L21/02642
- H01L21/02647
- H01L33/007
- H01L33/16
- H01S5/0213
- H01S5/0422
- H01S5/2201
- H01S5/3202
- H01S5/32025
- H01S5/3211
- H01S5/3216
- H01S5/34333
- H01S2301/173
- H01S2304/12
- IPC, 9
- C23C16 04
- C23C16 30
- C30B25 02
- C30B29 40
- H01L21 20
- H01L21 205
- H01L33 00
- H01L33 16
- H01S5 02