ATE537550T1

Apparatus and method for controlled particle beam manufacturing of semiconductors

Abstract

A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Term

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Projected expiry passed 10 July 2026, 0.2 years ago.

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69778005United States of AmericaP
2006026725United States of AmericaW

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WO2007008792A2World Intellectual Property Organization (WIPO)A2
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KR20080070619ARepublic of KoreaA
CN101248505AChinaA
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US7488960B2United States of AmericaB2
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EP2027594A2European Patent Office (EPO)A2
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HK1119832AHong Kong, ChinaA
HK1119832A1Hong Kong, ChinaA1
US7507960B2United States of AmericaB2
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EP2027594A4European Patent Office (EPO)A4
US2010098922A1United States of AmericaA1
CN101248505BChinaB
EP2027594B1European Patent Office (EPO)B1
AT537550TAustriaT
ATE537550T1This recordAustriaT1
US2012112323A1United States of AmericaA1
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