Apparatus and method for controlled particle beam manufacturing of semiconductors
Abstract
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
Term
Term ended
Projected expiry passed 10 July 2026, 0.2 years ago.
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33 members in 8 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 69778005 | United States of America | P | |
| 2006026725 | United States of America | W |
Members33
| Document | Office | Kind | |
|---|---|---|---|
| WO2007008792A2 | World Intellectual Property Organization (WIPO) | A2 | |
| US2007045534A1 | United States of America | A1 | |
| WO2007008792A3 | World Intellectual Property Organization (WIPO) | A3 | |
| US7259373B2 | United States of America | B2 | |
| US2007278418A1 | United States of America | A1 | |
| US2007278419A1 | United States of America | A1 | |
| US2007278428A1 | United States of America | A1 | |
| US2007284527A1 | United States of America | A1 | |
| US2007284537A1 | United States of America | A1 | |
| US2007284538A1 | United States of America | A1 | |
| US2007284695A1 | United States of America | A1 | |
| KR20080070619A | Republic of Korea | A | |
| CN101248505A | China | A | |
| JP2009500858A | Japan | A | |
| US7488960B2 | United States of America | B2 | |
| US7495242B2 | United States of America | B2 | |
| US7495244B2 | United States of America | B2 | |
| US7495245B2 | United States of America | B2 | |
| EP2027594A2 | European Patent Office (EPO) | A2 | |
| US7501644B2 | United States of America | B2 | |
| HK1119832A | Hong Kong, China | A | |
| HK1119832A1 | Hong Kong, China | A1 | |
| US7507960B2 | United States of America | B2 | |
| US7659526B2 | United States of America | B2 | |
| EP2027594A4 | European Patent Office (EPO) | A4 | |
| US2010098922A1 | United States of America | A1 | |
| CN101248505B | China | B | |
| EP2027594B1 | European Patent Office (EPO) | B1 | |
| AT537550T | Austria | T | |
| ATE537550T1This record | Austria | T1 | |
| US2012112323A1 | United States of America | A1 | |
| KR101359562B1 | Republic of Korea | B1 | |
| US8658994B2 | United States of America | B2 |
Numbers
- Application
- 6786767
Titles2
- English
- DEVICE AND METHOD FOR THE CONTROLLED PRODUCTION OF SEMICONDUCTORS USING PARTICLE BEAMS
- German
- VORRICHTUNG UND VERFAHREN ZUR KONTROLLIERTEN FERTIGUNG VON HALBLEITERN MITTELS TEILCHENSTRAHLEN
Classification
- CPC, 33
- H01J37/3056
- H10P50/242
- B82Y10/00
- B82Y40/00
- H01J37/045
- H01J37/3007
- H01J37/304
- H01J37/3172
- H01J37/3174
- H01J37/3177
- H01J2237/0432
- H01J2237/047
- H01J2237/30472
- H01J2237/31713
- H01J2237/31732
- H01J2237/31735
- H01J2237/31737
- H01J2237/3174
- H01J2237/31749
- H01J2237/3175
- H01J2237/31766
- Y10T428/24802
- Y10T428/24893
- H10D86/01
- H10D84/811
- H10D30/015
- H10D30/0221
- H10P30/204
- H10P30/21
- H10P30/20
- H10P90/1908
- H10W10/061
- H10W10/181
- IPC, 2
- H10D62 10
- H10D99 00