Apparatus and method for controlled particle beam manufacturing of semiconductors
Abstract
A method for performing a radiating the chamber includes the workpiece with charge particle: Charge particle source, for generating for particles stream; The collimator, which is along the axis collimation and electric conductive particles in a charge particle source,Methods digitizing apparatus arranged collimator downstream, which is along the axis vertical pitch between the electric conductive particles through the adjusting, forming a comprises at least charge particle the digital set of; Arranged on the connecting digitizing apparatus downstream the deflection reflector, wherein deflected the surface of a to the axis vertical is a series of deflecting electrode table, to deflect to the digital to diameter; And located at deflecting reflector's downstream workpiece table, wherein the workpiece and configuration for improving workpiece.
Term
Term ended
Expired 10 July 2026, 0.2 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
2 priority claims, no other members on record
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 69778005 | United States of America | P | |
| 2006026725 | United States of America | W |
Numbers
- Application
- 6786767
Titles2
- German
- VORRICHTUNG UND VERFAHREN ZUR KONTROLLIERTEN FERTIGUNG VON HALBLEITERN MITTELS TEILCHENSTRAHLEN
- English
- DEVICE AND METHOD FOR THE CONTROLLED PRODUCTION OF SEMICONDUCTORS BY PARTICLE RAYS
Classification
- CPC, 29
- H01J37/3056
- B82Y10/00
- B82Y40/00
- H01J37/045
- H01J37/3007
- H01J37/304
- H01J37/3172
- H01J37/3174
- H01J37/3177
- H01J2237/0432
- H01J2237/047
- H01J2237/30472
- H01J2237/31713
- H01J2237/31732
- H01J2237/31735
- H01J2237/31737
- H01J2237/3174
- H01J2237/31749
- H01J2237/3175
- H01J2237/31766
- H01L21/265
- H01L21/26513
- H01L21/76267
- H01L21/84
- H01L27/0629
- H01L29/66462
- H01L29/66659
- Y10T428/24802
- Y10T428/24893
- IPC, 3
- H01J37 04
- H01J37 302
- H01J37 317