Nova Patents
ATE532218T1

Laser patterning of light emitting devices and patterned light emitting devices

Abstract

A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.

Term

Term ended

Projected expiry passed 24 January 2025, 1.7 years ago.

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17 members in 7 offices

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Priority claims
DocumentOfficeKindDate
81529304United States of AmericaA
2005001933United States of AmericaW

Members17

Family members, oldest first
DocumentOfficeKind
US2005227379A1United States of AmericaA1
TW200534510ATaiwan Province of ChinaA
WO2005104253A1World Intellectual Property Organization (WIPO)A1
WO2005104253A8World Intellectual Property Organization (WIPO)A8
EP1733438A1European Patent Office (EPO)A1
KR20070013292ARepublic of KoreaA
US2007037307A1United States of AmericaA1
JP2007537581AJapanA
US7384809B2United States of AmericaB2
US2008135866A1United States of AmericaA1
US7419912B2United States of AmericaB2
US7829906B2United States of AmericaB2
US2011068351A1United States of AmericaA1
EP1733438B1European Patent Office (EPO)B1
AT532218TAustriaT
ATE532218T1This recordAustriaT1
US8263995B2United States of AmericaB2