Laser patterning of light emitting devices and patterned light emitting devices

Since a three-dimensional pattern is constituted in a semiconducting material layer, by forming the surface of a semiconducting material layer using laser, the luminescence device which has a semiconductor light emitting element on a substrate and this substrate is provided with an optical extraction structure. A semiconducting material layer is a substrate. The surface of a semiconducting material layer is formed by irradiating a semiconducting material layer with a laser beam with sufficient energy to remove a substance from a semiconducting material layer. A laser beam is irradiated again with the level which is less than a 融蝕 threshold value by a blanket system. Etching of a substrate is performed following irradiation of the laser beam to a semiconducting material layer. Anisotropic etching of the semiconducting material layer is carried out. Pattern formation also of the mask is carried out using a laser beam, and also a semiconducting material layer is etched using a mask. The luminescence device which has a three-dimensional pattern in the semiconducting material layer of a device is also offered.